Quantum device fine-tuning using unsupervised embedding learning
Authors:
N. M. van Esbroeck,
D. T. Lennon,
H. Moon,
V. Nguyen,
F. Vigneau,
L. C. Camenzind,
L. Yu,
D. M. Zumbühl,
G. A. D. Briggs,
D. Sejdinovic,
N. Ares
Abstract:
Quantum devices with a large number of gate electrodes allow for precise control of device parameters. This capability is hard to fully exploit due to the complex dependence of these parameters on applied gate voltages. We experimentally demonstrate an algorithm capable of fine-tuning several device parameters at once. The algorithm acquires a measurement and assigns it a score using a variational…
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Quantum devices with a large number of gate electrodes allow for precise control of device parameters. This capability is hard to fully exploit due to the complex dependence of these parameters on applied gate voltages. We experimentally demonstrate an algorithm capable of fine-tuning several device parameters at once. The algorithm acquires a measurement and assigns it a score using a variational auto-encoder. Gate voltage settings are set to optimise this score in real-time in an unsupervised fashion. We report fine-tuning times of a double quantum dot device within approximately 40 min.
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Submitted 13 January, 2020;
originally announced January 2020.
Machine learning enables completely automatic tuning of a quantum device faster than human experts
Authors:
H. Moon,
D. T. Lennon,
J. Kirkpatrick,
N. M. van Esbroeck,
L. C. Camenzind,
Liuqi Yu,
F. Vigneau,
D. M. Zumbühl,
G. A. D. Briggs,
M. A Osborne,
D. Sejdinovic,
E. A. Laird,
N. Ares
Abstract:
Device variability is a bottleneck for the scalability of semiconductor quantum devices. Increasing device control comes at the cost of a large parameter space that has to be explored in order to find the optimal operating conditions. We demonstrate a statistical tuning algorithm that navigates this entire parameter space, using just a few modelling assumptions, in the search for specific electron…
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Device variability is a bottleneck for the scalability of semiconductor quantum devices. Increasing device control comes at the cost of a large parameter space that has to be explored in order to find the optimal operating conditions. We demonstrate a statistical tuning algorithm that navigates this entire parameter space, using just a few modelling assumptions, in the search for specific electron transport features. We focused on gate-defined quantum dot devices, demonstrating fully automated tuning of two different devices to double quantum dot regimes in an up to eight-dimensional gate voltage space. We considered a parameter space defined by the maximum range of each gate voltage in these devices, demonstrating expected tuning in under 70 minutes. This performance exceeded a human benchmark, although we recognise that there is room for improvement in the performance of both humans and machines. Our approach is approximately 180 times faster than a pure random search of the parameter space, and it is readily applicable to different material systems and device architectures. With an efficient navigation of the gate voltage space we are able to give a quantitative measurement of device variability, from one device to another and after a thermal cycle of a device. This is a key demonstration of the use of machine learning techniques to explore and optimise the parameter space of quantum devices and overcome the challenge of device variability.
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Submitted 8 January, 2020;
originally announced January 2020.
