Fully autonomous tuning of a spin qubit
Authors:
Jonas Schuff,
Miguel J. Carballido,
Madeleine Kotzagiannidis,
Juan Carlos Calvo,
Marco Caselli,
Jacob Rawling,
David L. Craig,
Barnaby van Straaten,
Brandon Severin,
Federico Fedele,
Simon Svab,
Pierre Chevalier Kwon,
Rafael S. Eggli,
Taras Patlatiuk,
Nathan Korda,
Dominik Zumbühl,
Natalia Ares
Abstract:
Spanning over two decades, the study of qubits in semiconductors for quantum computing has yielded significant breakthroughs. However, the development of large-scale semiconductor quantum circuits is still limited by challenges in efficiently tuning and operating these circuits. Identifying optimal operating conditions for these qubits is complex, involving the exploration of vast parameter spaces…
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Spanning over two decades, the study of qubits in semiconductors for quantum computing has yielded significant breakthroughs. However, the development of large-scale semiconductor quantum circuits is still limited by challenges in efficiently tuning and operating these circuits. Identifying optimal operating conditions for these qubits is complex, involving the exploration of vast parameter spaces. This presents a real 'needle in the haystack' problem, which, until now, has resisted complete automation due to device variability and fabrication imperfections. In this study, we present the first fully autonomous tuning of a semiconductor qubit, from a grounded device to Rabi oscillations, a clear indication of successful qubit operation. We demonstrate this automation, achieved without human intervention, in a Ge/Si core/shell nanowire device. Our approach integrates deep learning, Bayesian optimization, and computer vision techniques. We expect this automation algorithm to apply to a wide range of semiconductor qubit devices, allowing for statistical studies of qubit quality metrics. As a demonstration of the potential of full automation, we characterise how the Rabi frequency and g-factor depend on barrier gate voltages for one of the qubits found by the algorithm. Twenty years after the initial demonstrations of spin qubit operation, this significant advancement is poised to finally catalyze the operation of large, previously unexplored quantum circuits.
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Submitted 6 February, 2024;
originally announced February 2024.
Bridging the reality gap in quantum devices with physics-aware machine learning
Authors:
D. L. Craig,
H. Moon,
F. Fedele,
D. T. Lennon,
B. Van Straaten,
F. Vigneau,
L. C. Camenzind,
D. M. Zumbühl,
G. A. D. Briggs,
M. A. Osborne,
D. Sejdinovic,
N. Ares
Abstract:
The discrepancies between reality and simulation impede the optimisation and scalability of solid-state quantum devices. Disorder induced by the unpredictable distribution of material defects is one of the major contributions to the reality gap. We bridge this gap using physics-aware machine learning, in particular, using an approach combining a physical model, deep learning, Gaussian random field…
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The discrepancies between reality and simulation impede the optimisation and scalability of solid-state quantum devices. Disorder induced by the unpredictable distribution of material defects is one of the major contributions to the reality gap. We bridge this gap using physics-aware machine learning, in particular, using an approach combining a physical model, deep learning, Gaussian random field, and Bayesian inference. This approach has enabled us to infer the disorder potential of a nanoscale electronic device from electron transport data. This inference is validated by verifying the algorithm's predictions about the gate voltage values required for a laterally-defined quantum dot device in AlGaAs/GaAs to produce current features corresponding to a double quantum dot regime.
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Submitted 22 November, 2021;
originally announced November 2021.