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SOT-MRAM 300mm integration for low power and ultrafast embedded memories
Abstract: We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ.
Submitted 22 October, 2018; originally announced October 2018.
Comments: presented at VLSI2018 session C8-2
Journal ref: 2018 IEEE Symposium on VLSI Circuits