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Roadmap to Neuromorphic Computing with Emerging Technologies
Authors:
Adnan Mehonic,
Daniele Ielmini,
Kaushik Roy,
Onur Mutlu,
Shahar Kvatinsky,
Teresa Serrano-Gotarredona,
Bernabe Linares-Barranco,
Sabina Spiga,
Sergey Savelev,
Alexander G Balanov,
Nitin Chawla,
Giuseppe Desoli,
Gerardo Malavena,
Christian Monzio Compagnoni,
Zhongrui Wang,
J Joshua Yang,
Ghazi Sarwat Syed,
Abu Sebastian,
Thomas Mikolajick,
Beatriz Noheda,
Stefan Slesazeck,
Bernard Dieny,
Tuo-Hung,
Hou,
Akhil Varri
, et al. (28 additional authors not shown)
Abstract:
The roadmap is organized into several thematic sections, outlining current computing challenges, discussing the neuromorphic computing approach, analyzing mature and currently utilized technologies, providing an overview of emerging technologies, addressing material challenges, exploring novel computing concepts, and finally examining the maturity level of emerging technologies while determining t…
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The roadmap is organized into several thematic sections, outlining current computing challenges, discussing the neuromorphic computing approach, analyzing mature and currently utilized technologies, providing an overview of emerging technologies, addressing material challenges, exploring novel computing concepts, and finally examining the maturity level of emerging technologies while determining the next essential steps for their advancement.
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Submitted 2 July, 2024;
originally announced July 2024.
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A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron
Authors:
Paolo Gibertini,
Luca Fehlings,
Suzanne Lancaster,
Quang Duong,
Thomas Mikolajick,
Catherine Dubourdieu,
Stefan Slesazeck,
Erika Covi,
Veeresh Deshpande
Abstract:
Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes. Ferroelectric Tunnel Junctions (FTJs) are ultra low-power memory devices and are well-suited to be integrated in these systems. Here, we present a hybrid FTJ-CMOS Integrate-and-Fire neuron which constitutes a fundamental building block for new…
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Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes. Ferroelectric Tunnel Junctions (FTJs) are ultra low-power memory devices and are well-suited to be integrated in these systems. Here, we present a hybrid FTJ-CMOS Integrate-and-Fire neuron which constitutes a fundamental building block for new-generation neuromorphic networks for edge computing. We demonstrate electrically tunable neural dynamics achievable by tuning the switching of the FTJ device.
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Submitted 4 November, 2022;
originally announced November 2022.
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Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing
Authors:
Suzanne Lancaster,
Quang T. Duong,
Erika Covi,
Thomas Mikolajick,
Stefan Slesazeck
Abstract:
HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching capability together with the low on-current density suggests the application in circuits for massive parallel computation. In this work, we discuss one example circuit of a differential synaptic cell featuring multiple pa…
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HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching capability together with the low on-current density suggests the application in circuits for massive parallel computation. In this work, we discuss one example circuit of a differential synaptic cell featuring multiple parallel connected FTJ devices. Moreover, from the circuit requirements we deduce that the absolute difference in currents (Ion - Ioff) is a more critical figure of merit than the tunneling electroresistance ratio (TER). Based on this, we discuss the potential of FTJ device optimization by means of electrode work function engineering in bilayer HZO/Al2O3 FTJs.
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Submitted 1 November, 2022; v1 submitted 21 September, 2022;
originally announced September 2022.
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A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices
Authors:
Shyam Narayanan,
Erika Covi,
Viktor Havel,
Charlotte Frenkel,
Suzanne Lancaster,
Quang Duong,
Stefan Slesazeck,
Thomas Mikolajick,
Melika Payvand,
Giacomo Indiveri
Abstract:
Novel non-volatile memory devices based on ferroelectric thin films represent a promising emerging technology that is ideally suited for neuromorphic applications. The physical switching mechanism in such films is the nucleation and growth of ferroelectric domains. Since this has a strong dependence on both pulse width and voltage amplitude, it is important to use precise pulsing schemes for a tho…
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Novel non-volatile memory devices based on ferroelectric thin films represent a promising emerging technology that is ideally suited for neuromorphic applications. The physical switching mechanism in such films is the nucleation and growth of ferroelectric domains. Since this has a strong dependence on both pulse width and voltage amplitude, it is important to use precise pulsing schemes for a thorough characterization of their behaviour. In this work, we present an on-chip 120 dB programmable range pulse generator, that can generate pulse widths ranging from 10ns to 10ms $\pm$2.5% which eliminates the RLC bottleneck in the device characterisation setup. We describe the pulse generator design and show how the pulse width can be tuned with high accuracy, using Digital to Analog converters. Finally, we present experimental results measured from the circuit, fabricated using a standard 180nm CMOS technology.
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Submitted 8 February, 2022;
originally announced February 2022.
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Ferroelectric Tunneling Junctions for Edge Computing
Authors:
Erika Covi,
Quang T. Duong,
Suzanne Lancaster,
Viktor Havel,
Jean Coignus,
Justine Barbot,
Ole Richter,
Philip Klein,
Elisabetta Chicca,
Laurent Grenouillet,
Athanasios Dimoulas,
Thomas Mikolajick,
Stefan Slesazeck
Abstract:
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.
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Submitted 5 July, 2021;
originally announced July 2021.
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Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing
Authors:
Benjamin Max,
Michael Hoffmann,
Halid Mulaosmanovic,
Stefan Slesazeck,
Thomas Mikolajick
Abstract:
Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1-xZrxO2; HZO) are a promising candidate for future applications, such as low-power memories and neuromorphic computing. The tunneling electroresistance (TER) is tunable through the polarization state of the HZO film. To circumvent the challenge of fabricating thin ferroelectric HZO layers in the tunneling range of 1-3 nm ran…
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Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1-xZrxO2; HZO) are a promising candidate for future applications, such as low-power memories and neuromorphic computing. The tunneling electroresistance (TER) is tunable through the polarization state of the HZO film. To circumvent the challenge of fabricating thin ferroelectric HZO layers in the tunneling range of 1-3 nm range, ferroelectric/dielectric double layer sandwiched between two symmetric metal electrodes are used. Due to the decoupling of the ferroelectric polarization storage layer and a dielectric tunneling layer with a higher bandgap, a significant TER ratio between the two polarization states is obtained. By exploiting previously reported switching behaviour and the gradual tunability of the resistance, FTJs can be used as potential candidates for the emulation of synapses for neuromorphic computing in spiking neural networks. The implementation of two major components of a synapse are shown: long term depression/potentiation by varying the amplitude/width/number of voltage pulses applied to the artificial FTJ synapse, and spike-timing-dependent-plasticity curves by applying time-delayed voltages at each electrode. These experimental findings show the potential of spiking neural networks and neuromorphic computing that can be implemented with hafnia-based FTJs.
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Submitted 2 July, 2021;
originally announced July 2021.
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2022 Roadmap on Neuromorphic Computing and Engineering
Authors:
Dennis V. Christensen,
Regina Dittmann,
Bernabé Linares-Barranco,
Abu Sebastian,
Manuel Le Gallo,
Andrea Redaelli,
Stefan Slesazeck,
Thomas Mikolajick,
Sabina Spiga,
Stephan Menzel,
Ilia Valov,
Gianluca Milano,
Carlo Ricciardi,
Shi-Jun Liang,
Feng Miao,
Mario Lanza,
Tyler J. Quill,
Scott T. Keene,
Alberto Salleo,
Julie Grollier,
Danijela Marković,
Alice Mizrahi,
Peng Yao,
J. Joshua Yang,
Giacomo Indiveri
, et al. (34 additional authors not shown)
Abstract:
Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exas…
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Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 1018 calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices.
The aim of this Roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The Roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges. We hope that this Roadmap will be a useful resource to readers outside this field, for those who are just entering the field, and for those who are well established in the neuromorphic community.
https://doi.org/10.1088/2634-4386/ac4a83
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Submitted 13 January, 2022; v1 submitted 12 May, 2021;
originally announced May 2021.
