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Straintronic magneto-tunneling-junction based ternary content addressable memory
Abstract: Straintronic magneto-tunneling junction (s-MTJ) switches, whose resistances are controlled with voltage-generated strain in the magnetostrictive free layer of the MTJ, are extremely energy-efficient switches that would dissipate a few aJ of energy during switching. Unfortunately, they are also relatively error-prone and have low resistance on/off ratio. This suggests that as computing elements, th… ▽ More
Submitted 21 October, 2016; v1 submitted 12 October, 2016; originally announced October 2016.
Comments: 8 pages, 11 figures
Journal ref: Part I: IEEE Transactions on Electron Devices (Volume: 64, Issue: 7, Page(s): 2835-2841, July 2017), Part II: IEEE Transactions on Electron Devices (Volume: 64, Issue: 7, Page(s): 2842-2848, July 2017)