A memristive deep belief neural network based on silicon synapses
Authors:
Wei Wang,
Loai Danial,
Yang Li,
Eric Herbelin,
Evgeny Pikhay,
Yakov Roizin,
Barak Hoffer,
Zhongrui Wang,
Shahar Kvatinsky
Abstract:
Memristor-based neuromorphic computing could overcome the limitations of traditional von Neumann computing architectures -- in which data are shuffled between separate memory and processing units -- and improve the performance of deep neural networks. However, this will require accurate synaptic-like device performance, and memristors typically suffer from poor yield and a limited number of reliab…
▽ More
Memristor-based neuromorphic computing could overcome the limitations of traditional von Neumann computing architectures -- in which data are shuffled between separate memory and processing units -- and improve the performance of deep neural networks. However, this will require accurate synaptic-like device performance, and memristors typically suffer from poor yield and a limited number of reliable conductance states. Here we report floating gate memristive synaptic devices that are fabricated in a commercial complementary metal-oxide-semiconductor (CMOS) process. These silicon synapses offer analogue tunability, high endurance, long retention times, predictable cycling degradation, moderate device-to-device variations, and high yield. They also provide two orders of magnitude higher energy efficiency for multiply-accumulate operations than graphics processing units. We use two 12-by-8 arrays of the memristive devices for in-situ training of a 19-by-8 memristive restricted Boltzmann machine for pattern recognition via a gradient descent algorithm based on contrastive divergence. We then create a memristive deep belief neural network consisting of three memristive restricted Boltzmann machines. We test this on the modified National Institute of Standards and Technology (MNIST) dataset, demonstrating recognition accuracy up to 97.05%.
△ Less
Submitted 20 July, 2023; v1 submitted 16 March, 2022;
originally announced March 2022.
Physical based compact model of Y-Flash memristor for neuromorphic computation
Authors:
Wei Wang,
Loai Danial,
Eric Herbelin,
Barak Hoffer,
Batel Oved,
Tzofnat Greenberg-Toledo,
Evgeny Pikhay,
Yakov Roizin,
Shahar Kvatinsky
Abstract:
Y-Flash memristors utilize the mature technology of single polysilicon floating gate non-volatile memories (NVM). It can be operated in a two-terminal configuration similar to the other emerging memristive devices, i.e., resistive random-access memory (RRAM), phase-change memory (PCM), etc. Fabricated in production complementary metal-oxide-semiconductor (CMOS) technology, Y-Flash memristors allow…
▽ More
Y-Flash memristors utilize the mature technology of single polysilicon floating gate non-volatile memories (NVM). It can be operated in a two-terminal configuration similar to the other emerging memristive devices, i.e., resistive random-access memory (RRAM), phase-change memory (PCM), etc. Fabricated in production complementary metal-oxide-semiconductor (CMOS) technology, Y-Flash memristors allow excellent repro-ducibility reflected in high neuromorphic products yields. Working in the subthreshold region, the device can be programmed to a large number of fine-tuned intermediate states in an analog fashion and allows low readout currents (1 nA ~ 5 $μ$ A). However, currently, there are no accurate models to describe the dynamic switching in this type of memristive device and account for multiple operational configurations. In this paper, we provide a physical-based compact model that describes Y-Flash memristor performance both in DC and AC regimes, and consistently describes the dynamic program and erase operations. The model is integrated into the commercial circuit design tools and is ready to be used in applications related to neuromorphic computation.
△ Less
Submitted 16 February, 2022;
originally announced February 2022.
