Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors
Authors:
Henriette Padberg,
Amir Regev,
Giuseppe Piccolboni,
Alessandro Bricalli,
Gabriel Molas,
Jean Francois Nodin,
Shahar Kvatinsky
Abstract:
Processing-in-memory (PIM) is attractive to overcome the limitations of modern computing systems. Numerous PIM systems exist, varying by the technologies and logic techniques used. Successful operation of specific logic functions is crucial for effective processing-in-memory. Memristive non-stateful logic techniques are compatible with CMOS logic and can be integrated into a 1T1R memory array, sim…
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Processing-in-memory (PIM) is attractive to overcome the limitations of modern computing systems. Numerous PIM systems exist, varying by the technologies and logic techniques used. Successful operation of specific logic functions is crucial for effective processing-in-memory. Memristive non-stateful logic techniques are compatible with CMOS logic and can be integrated into a 1T1R memory array, similar to commercial RRAM products. This paper analyzes and demonstrates two non-stateful logic techniques: 1T1R logic and scouting logic. As a first step, the used 1T1R SiO\textsubscript{x} valence change mechanism memristors are characterized in reference to their feasibility to perform logic functions. Various logical functions of the two logic techniques are experimentally demonstrated, showing correct functionality in all cases. Following the results, the challenges and limitations of the RRAM characteristics and 1T1R configuration for the application in logical functions are discussed.
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Submitted 6 October, 2023;
originally announced October 2023.
Fully-Binarized, Parallel, RRAM-based Computing Primitive for In-Memory Similarity Search
Authors:
Sandeep Kaur Kingra,
Vivek Parmar,
Deepak Verma,
Alessandro Bricalli,
Giuseppe Piccolboni,
Gabriel Molas,
Amir Regev,
Manan Suri
Abstract:
In this work, we propose a fully-binarized XOR-based IMSS (In-Memory Similarity Search) using RRAM (Resistive Random Access Memory) arrays. XOR (Exclusive OR) operation is realized using 2T-2R bitcells arranged along the column in an array. This enables simultaneous match operation across multiple stored data vectors by performing analog column-wise XOR operation and summation to compute HD (Hammi…
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In this work, we propose a fully-binarized XOR-based IMSS (In-Memory Similarity Search) using RRAM (Resistive Random Access Memory) arrays. XOR (Exclusive OR) operation is realized using 2T-2R bitcells arranged along the column in an array. This enables simultaneous match operation across multiple stored data vectors by performing analog column-wise XOR operation and summation to compute HD (Hamming Distance). The proposed scheme is experimentally validated on fabricated RRAM arrays. Full-system validation is performed through SPICE simulations using open source Skywater 130 nm CMOS PDK demonstrating energy of 17 fJ per XOR operation using the proposed bitcell with a full-system power dissipation of 145 $μ$W. Using projected estimations at advanced nodes (28 nm) energy savings of $\approx$1.5$\times$ compared to the state-of-the-art can be observed for a fixed workload. Application-level validation is performed on HSI (Hyper-Spectral Image) pixel classification task using the Salinas dataset demonstrating an accuracy of 90%.
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Submitted 18 September, 2022; v1 submitted 4 August, 2022;
originally announced August 2022.
