Showing 1–35 of 35 results for author: Pershin, Y V

Fully parallel implementation of digital memcomputing on FPGA

Authors: Dyk Chung Nguyen, Yuriy V. Pershin

Abstract: We present a fully parallel digital memcomputing solver implemented on a field-programmable gate array (FPGA) board. For this purpose, we have designed an FPGA code that solves the ordinary differential equations associated with digital memcomputing in parallel. A feature of the code is the use of only integer-type variables and integer constants to enhance optimization. Consequently, each integra… ▽ More We present a fully parallel digital memcomputing solver implemented on a field-programmable gate array (FPGA) board. For this purpose, we have designed an FPGA code that solves the ordinary differential equations associated with digital memcomputing in parallel. A feature of the code is the use of only integer-type variables and integer constants to enhance optimization. Consequently, each integration step in our solver is executed in 96~ns. This method was utilized for difficult instances of the Boolean satisfiability (SAT) problem close to a phase transition, involving up to about 150 variables. Our results demonstrate that the parallel implementation reduces the scaling exponent by about 1 compared to a sequential C++ code on a standard computer. Additionally, compared to C++ code, we observed a time-to-solution advantage of about three orders of magnitude. Given the limitations of FPGA resources, the current implementation of digital memcomputing will be especially useful for solving compact but challenging problems. △ Less

Submitted 23 May, 2024; originally announced May 2024.

Reduction of Joule Losses in Memristive Switching Using Optimal Control

Authors: Valeriy A. Slipko, Yuriy V. Pershin

Abstract: Electricity production from fossil fuels is among the main contributors to global warming. To suppress climate change, energy-efficient systems, devices, and technologies must be implemented. This study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. The basic question that we ask is what is the… ▽ More Electricity production from fossil fuels is among the main contributors to global warming. To suppress climate change, energy-efficient systems, devices, and technologies must be implemented. This study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. The basic question that we ask is what is the optimal driving protocol to switch a memristive device from one state to another. In the case of ideal memristors, in the most basic scenario, the optimal protocol is determined by solving a variational problem without constraints with the help of the Euler-Lagrange equation. In the case of memristive systems, for the same situation, the optimal protocol is found using the method of Lagrange multipliers. We demonstrate the advantages of our approaches through specific examples and compare our results with those of switching with constant voltage or current. Our findings suggest that voltage or current control can be used to reduce Joule losses in emerging memory devices. △ Less

Submitted 25 May, 2024; v1 submitted 1 April, 2024; originally announced April 2024.

Acceleration of digital memcomputing by jumps

Authors: Yuriy V. Pershin

Abstract: In this article, we present the potential benefits of incorporating jumps into the dynamics of digital memcomputing machines (DMMs), which have been developed to address complex optimization problems. We illustrate the potential speed improvement of a DMM solver with jumps over an unmodified DMM solver by solving Boolean satisfiability (SAT) problems of different complicatedness. Our findings sugg… ▽ More In this article, we present the potential benefits of incorporating jumps into the dynamics of digital memcomputing machines (DMMs), which have been developed to address complex optimization problems. We illustrate the potential speed improvement of a DMM solver with jumps over an unmodified DMM solver by solving Boolean satisfiability (SAT) problems of different complicatedness. Our findings suggest that jumps can modify scaling exponents and improve solving times by up to 75 %. Interestingly, the advantages of jumps can be seen in cases where the size of the jump is so large that otherwise the continuous dynamics of voltage variables becomes almost binary. △ Less

Submitted 3 March, 2024; originally announced March 2024.

SPICE Modeling of Memcomputing Logic Gates

Authors: Y. V. Pershin

Abstract: Memcomputing logic gates generalize the traditional Boolean logic gates for operation in the reverse direction. According to the literature, this functionality enables the efficient solution of computationally-intensive problems including factorization and NP-complete problems. To approach the deployment of memcomputing gates in hardware, this paper introduces SPICE models of memcomputing logic ga… ▽ More Memcomputing logic gates generalize the traditional Boolean logic gates for operation in the reverse direction. According to the literature, this functionality enables the efficient solution of computationally-intensive problems including factorization and NP-complete problems. To approach the deployment of memcomputing gates in hardware, this paper introduces SPICE models of memcomputing logic gates following their original definition. Using these models, we demonstrate the behavior of single gates as well as small self-organizing circuits. We also correct some inconsistencies in the prior literature. Importantly, the correct schematics of dynamic correction module is reported here for the first time. Our work makes memcomputing more accessible to those who are interested in this emerging computing technology. △ Less

Submitted 26 July, 2023; originally announced July 2023.

Journal ref: Radioengineering 32, 542-556 (2023)

Hardware implementation of digital memcomputing on small-size FPGAs

Authors: Dyk Chung Nguyen, Yuan-Hang Zhang, Massimiliano Di Ventra, Yuriy V. Pershin

Abstract: Memcomputing is a novel computing paradigm beyond the von-Neumann one. Its digital version is designed for the efficient solution of combinatorial optimization problems, which emerge in various fields of science and technology. Previously, the performance of digital memcomputing machines (DMMs) was demonstrated using software simulations of their ordinary differential equations. Here, we present t… ▽ More Memcomputing is a novel computing paradigm beyond the von-Neumann one. Its digital version is designed for the efficient solution of combinatorial optimization problems, which emerge in various fields of science and technology. Previously, the performance of digital memcomputing machines (DMMs) was demonstrated using software simulations of their ordinary differential equations. Here, we present the first hardware realization of a DMM algorithm on a low-cost FPGA board. In this demonstration, we have implemented a Boolean satisfiability problem solver. To optimize the use of hardware resources, the algorithm was partially parallelized. The scalability of the present implementation is explored and our FPGA-based results are compared to those obtained using a python code running on a traditional (von-Neumann) computer, showing one to two orders of magnitude speed-up in time to solution. This initial small-scale implementation is projected to state-of-the-art FPGA boards anticipating further advantages of the hardware realization of DMMs over their software emulation. △ Less

Submitted 1 May, 2023; originally announced May 2023.

Journal ref: 2023 IEEE 66th International Midwest Symposium on Circuits and Systems (MWSCAS), Tempe, AZ, USA, 2023, pp. 346-350

Electromechanical memcapacitive neurons for energy-efficient spiking neural networks

Authors: Zixi Zhang, Yuriy V. Pershin, Ivar Martin

Abstract: In this article, we introduce a new nanoscale electromechanical device -- a leaky memcapacitor -- and show that it may be useful for the hardware implementation of spiking neurons. The leaky memcapacitor is a movable-plate capacitor that becomes quite conductive when the plates come close to each other. The equivalent circuit of the leaky memcapacitor involves a memcapacitive and memristive system… ▽ More In this article, we introduce a new nanoscale electromechanical device -- a leaky memcapacitor -- and show that it may be useful for the hardware implementation of spiking neurons. The leaky memcapacitor is a movable-plate capacitor that becomes quite conductive when the plates come close to each other. The equivalent circuit of the leaky memcapacitor involves a memcapacitive and memristive system connected in parallel. In the leaky memcapacitor, the resistance and capacitance depend on the same internal state variable, which is the displacement of the movable plate. We have performed a comprehensive analysis showing that several spiking types observed in biological neurons can be implemented with the leaky memcapacitor. Significant attention is paid to the dynamic properties of the model. As in leaky memcapacitors the capacitive and leaking resistive functionalities are implemented naturally within the same device structure, their use will simplify the creation of spiking neural networks. △ Less

Submitted 21 April, 2023; originally announced April 2023.

Journal ref: Chaos, Solitons & Fractals 181, 114601 (2024)

A probabilistic model of resistance jumps in memristive devices

Authors: V. A. Slipko, Y. V. Pershin

Abstract: Resistance switching memory cells such as electrochemical metallization cells and valence change mechanism cells have the potential to revolutionize information processing and storage. However, the creation of deterministic resistance switching devices is a challenging problem that is still open. At present, the modeling of resistance switching cells is dominantly based on deterministic models tha… ▽ More Resistance switching memory cells such as electrochemical metallization cells and valence change mechanism cells have the potential to revolutionize information processing and storage. However, the creation of deterministic resistance switching devices is a challenging problem that is still open. At present, the modeling of resistance switching cells is dominantly based on deterministic models that fail to capture the cycle-to-cycle variability intrinsic to these devices. Herewith we introduce a state probability distribution function and associated integro-differential equation to describe the switching process consisting of a set of stochastic jumps. Numerical and analytical solutions of the equation have been found in two model cases. This work expands the toolbox of models available for resistance switching cells and related devices, and enables a rigorous description of intrinsic physical behavior not available in other models. △ Less

Submitted 6 February, 2023; originally announced February 2023.

Journal ref: Phys. Rev. E 107, 064117 (2023)

Roadmap for Unconventional Computing with Nanotechnology

Authors: Giovanni Finocchio, Jean Anne C. Incorvia, Joseph S. Friedman, Qu Yang, Anna Giordano, Julie Grollier, Hyunsoo Yang, Florin Ciubotaru, Andrii Chumak, Azad J. Naeemi, Sorin D. Cotofana, Riccardo Tomasello, Christos Panagopoulos, Mario Carpentieri, Peng Lin, Gang Pan, J. Joshua Yang, Aida Todri-Sanial, Gabriele Boschetto, Kremena Makasheva, Vinod K. Sangwan, Amit Ranjan Trivedi, Mark C. Hersam, Kerem Y. Camsari, Peter L. McMahon , et al. (26 additional authors not shown)

Abstract: In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in energy cost, computational speed, reduced footprint, cyber resilience, and processing power. The time is ripe for a roadmap for unconventional computing w… ▽ More In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in energy cost, computational speed, reduced footprint, cyber resilience, and processing power. The time is ripe for a roadmap for unconventional computing with nanotechnologies to guide future research, and this collection aims to fill that need. The authors provide a comprehensive roadmap for neuromorphic computing using electron spins, memristive devices, two-dimensional nanomaterials, nanomagnets, and various dynamical systems. They also address other paradigms such as Ising machines, Bayesian inference engines, probabilistic computing with p-bits, processing in memory, quantum memories and algorithms, computing with skyrmions and spin waves, and brain-inspired computing for incremental learning and problem-solving in severely resource-constrained environments. These approaches have advantages over traditional Boolean computing based on von Neumann architecture. As the computational requirements for artificial intelligence grow 50 times faster than Moore's Law for electronics, more unconventional approaches to computing and signal processing will appear on the horizon, and this roadmap will help identify future needs and challenges. In a very fertile field, experts in the field aim to present some of the dominant and most promising technologies for unconventional computing that will be around for some time to come. Within a holistic approach, the goal is to provide pathways for solidifying the field and guiding future impactful discoveries. △ Less

Submitted 27 February, 2024; v1 submitted 17 January, 2023; originally announced January 2023.

Comments: 80 pages accepted in Nano Futures

Journal ref: Nano Futures (2024)

Memristive Ising Circuits

Authors: V. J. Dowling, Y. V. Pershin

Abstract: The Ising model is of prime importance in the field of statistical mechanics. Here we show that Ising-type interactions can be realized in periodically-driven circuits of stochastic binary resistors with memory. A key feature of our realization is the simultaneous co-existence of ferromagnetic and antiferromagnetic interactions between two neighboring spins -- an extraordinary property not availab… ▽ More The Ising model is of prime importance in the field of statistical mechanics. Here we show that Ising-type interactions can be realized in periodically-driven circuits of stochastic binary resistors with memory. A key feature of our realization is the simultaneous co-existence of ferromagnetic and antiferromagnetic interactions between two neighboring spins -- an extraordinary property not available in nature. We demonstrate that the statistics of circuit states may perfectly match the ones found in the Ising model with ferromagnetic or antiferromagnetic interactions, and, importantly, the corresponding Ising model parameters can be extracted from the probabilities of circuit states. Using this finding, the Ising Hamiltonian is re-constructed in several model cases, and it is shown that different types of interaction can be realized in circuits of stochastic memristors. △ Less

Submitted 9 October, 2022; originally announced October 2022.

Journal ref: Phys. Rev. E 106, 054156 (2022)

Analytic and SPICE modeling of stochastic ReRAM circuits

Authors: V. J. Dowling, V. A. Slipko, Y. V. Pershin

Abstract: The modeling of conventional (deterministic) electronic circuits - ones consisting of transistors, resistors, capacitors, inductors, and other traditional electronic components - is a well-established subject. The cycle-to-cycle variability of emerging electronic devices, in particular, certain ReRAM cells, has led to the concept of stochastic circuits. Unfortunately, even in relatively simple cas… ▽ More The modeling of conventional (deterministic) electronic circuits - ones consisting of transistors, resistors, capacitors, inductors, and other traditional electronic components - is a well-established subject. The cycle-to-cycle variability of emerging electronic devices, in particular, certain ReRAM cells, has led to the concept of stochastic circuits. Unfortunately, even in relatively simple cases, the direct transient analysis of stochastic circuits is computationally demanding and potentially impractical, if possible at all. An important development in this area has been the application of a master equation that is easily implemented in SPICE. In this conference paper, we briefly review the master equation approach and present an improved implementation of this approach in SPICE. Moreover, we find an attractor state in a periodically driven memristive circuit - a stochastic counterpart of deterministic memristor attractors. △ Less

Submitted 25 January, 2022; originally announced January 2022.

Comments: to be published the Proceedings of SPIE dedicated to ICMNE-2021

Journal ref: Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 1215709 (2022)

An experimental demonstration of the memristor test

Authors: Y. V. Pershin, J. Kim, T. Datta, M. Di Ventra

Abstract: A simple and unambiguous test has been recently suggested [J. Phys. D: Applied Physics, 52, 01LT01 (2018)] to check experimentally if a resistor with memory is indeed a memristor, namely a resistor whose resistance depends only on the charge that flows through it, or on the history of the voltage across it. However, although such a test would represent the litmus test for claims about memristors (… ▽ More A simple and unambiguous test has been recently suggested [J. Phys. D: Applied Physics, 52, 01LT01 (2018)] to check experimentally if a resistor with memory is indeed a memristor, namely a resistor whose resistance depends only on the charge that flows through it, or on the history of the voltage across it. However, although such a test would represent the litmus test for claims about memristors (in the ideal sense), it has yet to be applied widely to actual physical devices. In this paper, we experimentally apply it to a current-carrying wire interacting with a magnetic core, which was recently claimed to be a memristor (so-called `$Φ$ memristor') [J. Appl. Phys. 125, 054504 (2019)]. The results of our experiment demonstrate unambiguously that this `$Φ$ memristor' is not a memristor: it is simply an inductor with memory. This demonstration casts further doubts that ideal memristors do actually exist in nature or may be easily created in the lab. △ Less

Submitted 23 February, 2021; originally announced February 2021.

Journal ref: Physica E: Low-dimensional Systems and Nanostructures, Volume 142, 115290 (2022)

Theory of heterogeneous circuits with stochastic memristive devices

Authors: V. A. Slipko, Y. V. Pershin

Abstract: We introduce an approach based on the Chapman-Kolmogorov equation to model heterogeneous stochastic circuits, namely, the circuits combining binary or multi-state stochastic memristive devices and continuum reactive components (capacitors and/or inductors). Such circuits are described in terms of occupation probabilities of memristive states that are functions of reactive variables. As an illustra… ▽ More We introduce an approach based on the Chapman-Kolmogorov equation to model heterogeneous stochastic circuits, namely, the circuits combining binary or multi-state stochastic memristive devices and continuum reactive components (capacitors and/or inductors). Such circuits are described in terms of occupation probabilities of memristive states that are functions of reactive variables. As an illustrative example, the series circuit of a binary memristor and capacitor is considered in detail. Some analytical solutions are found. Our work offers a novel analytical/numerical tool for modeling complex stochastic networks, which may find a broad range of applications. △ Less

Submitted 29 January, 2021; v1 submitted 28 January, 2021; originally announced January 2021.

Journal ref: in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 69, no. 1, pp. 214-218, Jan. 2022

The Fourier signatures of memristive hysteresis

Authors: Y. V. Pershin, C. -C. Chien, M. Di Ventra

Abstract: While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis). Here we demonstrate experimentally that the hysteresis of memristive systems can be unambiguously distinguished from the linear or non-linear response of systems… ▽ More While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis). Here we demonstrate experimentally that the hysteresis of memristive systems can be unambiguously distinguished from the linear or non-linear response of systems without hysteresis by the values of certain Fourier series coefficients. We also show that the Fourier series convergence depends on driving conditions, and introduce a measure of hysteresis. These results may be used to quantify the memory content of resistive memories, and tune their Fourier spectrum according to the excitation signal. △ Less

Submitted 25 March, 2021; v1 submitted 3 October, 2020; originally announced October 2020.

Journal ref: J. Phys. D: Appl. Phys. 54 245302 (2021)

Modeling networks of probabilistic memristors in SPICE

Authors: V. J. Dowling, V. A. Slipko, Y. V. Pershin

Abstract: Efficient simulation of probabilistic memristors and their networks requires novel modeling approaches. One major departure from the conventional memristor modeling is based on a master equation for the occupation probabilities of network states [arXiv:2003.11011 (2020)]. In the present article, we show how to implement such master equations in SPICE - a general-purpose circuit simulation program.… ▽ More Efficient simulation of probabilistic memristors and their networks requires novel modeling approaches. One major departure from the conventional memristor modeling is based on a master equation for the occupation probabilities of network states [arXiv:2003.11011 (2020)]. In the present article, we show how to implement such master equations in SPICE - a general-purpose circuit simulation program. In the case studies, we simulate the dynamics of ac-driven probabilistic binary and multi-state memristors, and dc-driven networks of probabilistic binary and multi-state memristors. Our SPICE results are in perfect agreement with known analytical solutions. Examples of LTspice codes are included. △ Less

Submitted 10 September, 2020; originally announced September 2020.

Journal ref: Radioengineering 30(1), 157-163 (2021)

Probabilistic Memristive Networks: Application of a Master Equation to Networks of Binary ReRAM cells

Authors: V. J. Dowling, V. A. Slipko, Y. V. Pershin

Abstract: The possibility of using non-deterministic circuit components has been gaining significant attention in recent years. The modeling and simulation of their circuits require novel approaches, as now the state of a circuit at an arbitrary moment in time cannot be precisely predicted. Generally, these circuits should be described in terms of probabilities, the circuit variables should be calculated on… ▽ More The possibility of using non-deterministic circuit components has been gaining significant attention in recent years. The modeling and simulation of their circuits require novel approaches, as now the state of a circuit at an arbitrary moment in time cannot be precisely predicted. Generally, these circuits should be described in terms of probabilities, the circuit variables should be calculated on average, and correlation functions should be used to explore interrelations among the variables. In this paper, we use, for the first time, a master equation to analyze the networks composed of probabilistic binary memristors. Analytical solutions of the master equation for the case of identical memristors connected in-series and in-parallel are found. Our analytical results are supplemented by results of numerical simulations that extend our findings beyond the case of identical memristors. The approach proposed in this paper facilitates the development of probabilistic/stochastic electronic circuits and advance their real-world applications. △ Less

Submitted 4 December, 2020; v1 submitted 24 March, 2020; originally announced March 2020.

Journal ref: Chaos, Solitons & Fractals, Volume 142, 110385 (2021)

Comment on "$Φ$ memristor: Real memristor found" by F. Z. Wang, L. Li, L. Shi, H. Wu, and L. O. Chua [J. Appl. Phys. 125, 054504 (2019)]

Authors: Y. V. Pershin, M. Di Ventra

Abstract: Wang et al. claim [J. Appl. Phys. 125, 054504 (2019)] that a current-carrying wire interacting with a magnetic core represents a memristor. Here, we demonstrate that this claim is false. We first show that such memristor "discovery" is based on incorrect physics, which does not even capture basic properties of magnetic core materials, such as their magnetic hysteresis. Moreover, the predictions of… ▽ More Wang et al. claim [J. Appl. Phys. 125, 054504 (2019)] that a current-carrying wire interacting with a magnetic core represents a memristor. Here, we demonstrate that this claim is false. We first show that such memristor "discovery" is based on incorrect physics, which does not even capture basic properties of magnetic core materials, such as their magnetic hysteresis. Moreover, the predictions of Wang et al.'s model contradict the experimental curves presented in their paper. Additionally, the theoretical pinched hysteresis loops presented by Wang et al. can not be reproduced if their model is used, and there are serious flaws in their "negative memristor" emulator design. Finally, a simple gedanken experiment shows that the proposed $Φ$-memristor would fail the memristor test we recently suggested in J. Phys. D: Appl. Phys. 52, 01LT01 (2019). The device "discovered" by Wang et al. is just an inductor with memory. △ Less

Submitted 15 January, 2021; v1 submitted 26 September, 2019; originally announced September 2019.

Comments: Following this comment, the article [F. Z. Wang, L. Li, L. Shi, H. Wu, and L. O. Chua, J. Appl. Phys. 125, 054504 (2019)] was retracted from JAP on technical grounds. The retraction notice can be found at https://doi.org/10.1063/5.0040852

A Demonstration of Implication Logic Based on Volatile (Diffusive) Memristors

Authors: Y. V. Pershin

Abstract: Implication logic gates that are based on volatile memristors are demonstrated experimentally with the use of relay-based volatile memristor emulators of an original design. The fabricated logic circuit involves two volatile memristors and it is capable of performing four fundamental logic functions (two types of material implication and the negations thereof). Moreover, current-voltage characteri… ▽ More Implication logic gates that are based on volatile memristors are demonstrated experimentally with the use of relay-based volatile memristor emulators of an original design. The fabricated logic circuit involves two volatile memristors and it is capable of performing four fundamental logic functions (two types of material implication and the negations thereof). Moreover, current-voltage characteristics of individual emulators are recorded and self-sustained oscillations in a resistor-volatile memristor circuit are found. The developed emulator offers a great potential for memristive circuit experiments because of its simplicity, similarity of response with volatile memristors, and low cost. Our findings, which are based on emulators, can easily be reproduced with physical volatile memristors and, thus, open up possibilities for emerging in-memory computing architectures. △ Less

Submitted 17 September, 2019; originally announced September 2019.

Journal ref: IEEE Trans. on Circ. and Syst. II 66, 1033 (2019)

An experimental proof that resistance-switching memories are not memristors

Authors: J. Kim, Y. V. Pershin, M. Yin, T. Datta, M. Di Ventra

Abstract: It has been suggested that all resistive-switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed [J. Phys. D: Appl. Phys. {\bf 52}, 01LT01 (2019)] to determine whether a given physical system is indeed a memristor or not. Here, we… ▽ More It has been suggested that all resistive-switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed [J. Phys. D: Appl. Phys. {\bf 52}, 01LT01 (2019)] to determine whether a given physical system is indeed a memristor or not. Here, we experimentally apply such a test to both in-house fabricated Cu-SiO2 and commercially available electrochemical metallization cells. Our results unambiguously show that electrochemical metallization memory cells are not memristors. Since the particular resistance-switching memories employed in our study share similar features with many other memory cells, our findings refute the claim that all resistance-switching memories are memristors. They also cast doubts on the existence of ideal memristors as actual physical devices that can be fabricated experimentally. Our results then lead us to formulate two memristor impossibility conjectures regarding the impossibility of building a model of physical resistance-switching memories based on the memristor model. △ Less

Submitted 24 March, 2020; v1 submitted 16 September, 2019; originally announced September 2019.

Journal ref: Advanced Electronic Materials 6, no. 7 (2020): 2000010

Bifurcation analysis of a TaO memristor model

Authors: Y. V. Pershin, V. A. Slipko

Abstract: This paper presents a study of bifurcation in the time-averaged dynamics of TaO memristors driven by narrow pulses of alternating polarities. The analysis, based on a physics-inspired model, focuses on the stable fixed points and on how these are affected by the pulse parameters. Our main finding is the identification of a driving regime when two stable fixed points exist simultaneously. To the be… ▽ More This paper presents a study of bifurcation in the time-averaged dynamics of TaO memristors driven by narrow pulses of alternating polarities. The analysis, based on a physics-inspired model, focuses on the stable fixed points and on how these are affected by the pulse parameters. Our main finding is the identification of a driving regime when two stable fixed points exist simultaneously. To the best of our knowledge, such bistability is identified in a single memristor for the first time. This result can be readily tested experimentally, and is expected to be useful in future memristor circuit designs. △ Less

Submitted 4 June, 2019; originally announced June 2019.

Journal ref: J. Phys. D: Appl. Phys. 52 505304 (2019)

Comment on "If it's pinched it's a memristor" by L. Chua [Semicond. Sci. Technol. 29, 104001 (2014)]

Authors: Y. V. Pershin, M. Di Ventra

Abstract: In his paper "If it's pinched it's a memristor" [Semicond. Sci. Technol. 29, 104001 (2014)] L. Chua claims to extend the notion of memristor to all two-terminal resistive devices that show a hysteresis loop pinched at the origin. He also states that memcapacitors and meminductors can be defined by a trivial replacement of symbols in the memristor relations, and, therefore, there should be a corres… ▽ More In his paper "If it's pinched it's a memristor" [Semicond. Sci. Technol. 29, 104001 (2014)] L. Chua claims to extend the notion of memristor to all two-terminal resistive devices that show a hysteresis loop pinched at the origin. He also states that memcapacitors and meminductors can be defined by a trivial replacement of symbols in the memristor relations, and, therefore, there should be a correspondence between the hysteresis curves of different types of memory elements. This leads the author to the erroneous conclusion that charge-voltage curves of any memcapacitive devices should be pinched at the origin. The purpose of this Comment is to correct the wrong statements in Chua's paper, as well as to highlight some other inconsistencies in his reasoning. We also provide experimental evidence of a memcapacitive device showing non-pinched hysteresis. △ Less

Submitted 6 May, 2019; originally announced May 2019.

Journal ref: Semicond. Sci. Technol. 34, 098001 (2019)

On the validity of memristor modeling in the neural network literature

Authors: Y. V. Pershin, M. Di Ventra

Abstract: An analysis of the literature shows that there are two types of non-memristive models that have been widely used in the modeling of so-called "memristive" neural networks. Here, we demonstrate that such models have nothing in common with the concept of memristive elements: they describe either non-linear resistors or certain bi-state systems, which all are devices without memory. Therefore, the re… ▽ More An analysis of the literature shows that there are two types of non-memristive models that have been widely used in the modeling of so-called "memristive" neural networks. Here, we demonstrate that such models have nothing in common with the concept of memristive elements: they describe either non-linear resistors or certain bi-state systems, which all are devices without memory. Therefore, the results presented in a significant number of publications are at least questionable, if not completely irrelevant to the actual field of memristive neural networks. △ Less

Submitted 18 April, 2019; originally announced April 2019.

Journal ref: Neural Networks 121, 52 (2020)

Transient dynamics of pulse-driven memristors in the presence of a stable fixed point

Authors: V. A. Slipko, Y. V. Pershin

Abstract: Some memristors are quite interesting from the point of view of dynamical systems. When driven by narrow pulses of alternating polarities, their dynamics has a stable fixed point, which may be useful for future applications. We study the transient dynamics of two types of memristors characterized by a stable fixed point using a time-averaged evolution equation. Time-averaged trajectories of the Bi… ▽ More Some memristors are quite interesting from the point of view of dynamical systems. When driven by narrow pulses of alternating polarities, their dynamics has a stable fixed point, which may be useful for future applications. We study the transient dynamics of two types of memristors characterized by a stable fixed point using a time-averaged evolution equation. Time-averaged trajectories of the Biolek window function memristor and resistor-threshold type memristor circuit (an effective memristor) are determined analytically, and the times of relaxation to the stable fixed point are found. Our analytical results are in perfect agreement with the results of numerical simulations. △ Less

Submitted 17 April, 2019; originally announced April 2019.

Importance of the window function choice for the predictive modelling of memristors

Authors: V. A. Slipko, Y. V. Pershin

Abstract: Window functions are widely employed in memristor models to restrict the changes of the internal state variables to specified intervals. Here we show that the actual choice of window function is of significant importance for the predictive modelling of memristors. Using a recently formulated theory of memristor attractors, we demonstrate that whether stable fixed points exist depends on the type o… ▽ More Window functions are widely employed in memristor models to restrict the changes of the internal state variables to specified intervals. Here we show that the actual choice of window function is of significant importance for the predictive modelling of memristors. Using a recently formulated theory of memristor attractors, we demonstrate that whether stable fixed points exist depends on the type of window function used in the model. Our main findings are formulated in terms of two memristor attractor theorems, which apply to broad classes of memristor models. As an example of our findings, we predict the existence of stable fixed points in Biolek window function memristors and their absence in memristors described by the Joglekar window function, when such memristors are driven by periodic alternating polarity pulses. It is anticipated that the results of this study will contribute toward the development of more sophisticated models of memristive devices and systems. △ Less

Submitted 11 February, 2019; v1 submitted 15 November, 2018; originally announced November 2018.

Computing with volatile memristors: An application of non-pinched hysteresis

Authors: Y. V. Pershin, S. N. Shevchenko

Abstract: The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated. We have adopted a hysteretic graphene-based field emission structure as a prototype of volatile memristor, which is characterized by a non-pinched hysteresis loop. Memristive model of the structure is developed and used to simulate a polymor… ▽ More The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated. We have adopted a hysteretic graphene-based field emission structure as a prototype of volatile memristor, which is characterized by a non-pinched hysteresis loop. Memristive model of the structure is developed and used to simulate a polymorphic circuit implementing in-memory computing gates such as the material implication. Specific regions of parameter space realizing useful logic functions are identified. Our results are applicable to other realizations of volatile memory devices. △ Less

Submitted 24 November, 2016; originally announced November 2016.

Comments: 11 pages, 7 figures

Journal ref: Nanotechnology 28, 075204 (2017)

Metastable Memristive Lines for Signal Transmission and Information Processing Applications

Authors: V. A. Slipko, Y. V. Pershin

Abstract: Traditional studies of memristive devices have mainly focused on their applications in non-volatile information storage and information processing. Here, we demonstrate that the third fundamental component of information technologies { the transfer of information { can also be employed with memristive devices. For this purpose, we introduce a metastable memristive circuit. Combining metastable mem… ▽ More Traditional studies of memristive devices have mainly focused on their applications in non-volatile information storage and information processing. Here, we demonstrate that the third fundamental component of information technologies { the transfer of information { can also be employed with memristive devices. For this purpose, we introduce a metastable memristive circuit. Combining metastable memristive circuits into a line, one obtains an architecture capable of transferring a signal edge from one space location to another. We emphasize that the suggested transmission lines employ only resistive components. Moreover, their networks (for example, Y-connected lines) have an information processing capability. △ Less

Submitted 13 October, 2016; originally announced October 2016.

Journal ref: Phys. Rev. E 95, 042213 (2017)

A Memcomputing Pascaline

Authors: Y. V. Pershin, L. K. Castelano, F. Hartmann, V. Lopez-Richard, M. Di Ventra

Abstract: The original Pascaline was a mechanical calculator able to sum and subtract integers. It encodes information in the angles of mechanical wheels and through a set of gears, and aided by gravity, could perform the calculations. Here, we show that such a concept can be realized in electronics using memory elements such as memristive systems. By using memristive emulators we have demonstrated experime… ▽ More The original Pascaline was a mechanical calculator able to sum and subtract integers. It encodes information in the angles of mechanical wheels and through a set of gears, and aided by gravity, could perform the calculations. Here, we show that such a concept can be realized in electronics using memory elements such as memristive systems. By using memristive emulators we have demonstrated experimentally the memcomputing version of the mechanical Pascaline, capable of processing and storing the numerical results in the multiple levels of each memristive element. Our result is the first experimental demonstration of multidigit arithmetics with multi-level memory devices that further emphasizes the versatility and potential of memristive systems for future massively-parallel high-density computing architectures. △ Less

Submitted 16 March, 2015; originally announced March 2015.

Journal ref: IEEE Trans. Circ. Syst. II 63, 558 (2016)

Memcomputing with membrane memcapacitive systems

Authors: Yuriy V. Pershin, Fabio L. Traversa, Massimiliano Di Ventra

Abstract: We show theoretically that networks of membrane memcapacitive systems -- capacitors with memory made out of membrane materials -- can be used to perform a complete set of logic gates in a massively parallel way by simply changing the external input amplitudes, but not the topology of the network. This polymorphism is an important characteristic of memcomputing (computing with memories) that closel… ▽ More We show theoretically that networks of membrane memcapacitive systems -- capacitors with memory made out of membrane materials -- can be used to perform a complete set of logic gates in a massively parallel way by simply changing the external input amplitudes, but not the topology of the network. This polymorphism is an important characteristic of memcomputing (computing with memories) that closely reproduces one of the main features of the brain. A practical realization of these membrane memcapacitive systems, using, e.g., graphene or other 2D materials, would be a step forward towards a solid-state realization of memcomputing with passive devices. △ Less

Submitted 7 July, 2015; v1 submitted 13 October, 2014; originally announced October 2014.

Journal ref: Nanotechnology, vol. 26, page 225201 (9 pp), year 2015

Memcomputing and Swarm Intelligence

Authors: Y. V. Pershin, M. Di Ventra

Abstract: We explore the relation between memcomputing, namely computing with and in memory, and swarm intelligence algorithms. In particular, we show that one can design memristive networks to solve short-path optimization problems that can also be solved by ant-colony algorithms. By employing appropriate memristive elements one can demonstrate an almost one-to-one correspondence between memcomputing and a… ▽ More We explore the relation between memcomputing, namely computing with and in memory, and swarm intelligence algorithms. In particular, we show that one can design memristive networks to solve short-path optimization problems that can also be solved by ant-colony algorithms. By employing appropriate memristive elements one can demonstrate an almost one-to-one correspondence between memcomputing and ant colony optimization approaches. However, the memristive network has the capability of finding the solution in one deterministic step, compared to the stochastic multi-step ant colony optimization. This result paves the way for nanoscale hardware implementations of several swarm intelligence algorithms that are presently explored, from scheduling problems to robotics. △ Less

Submitted 28 August, 2014; originally announced August 2014.

Memcapacitive neural networks

Authors: Y. V. Pershin, M. Di Ventra

Abstract: We show that memcapacitive (memory capacitive) systems can be used as synapses in artificial neural networks. As an example of our approach, we discuss the architecture of an integrate-and-fire neural network based on memcapacitive synapses. Moreover, we demonstrate that the spike-timing-dependent plasticity can be simply realized with some of these devices. Memcapacitive synapses are a low-energy… ▽ More We show that memcapacitive (memory capacitive) systems can be used as synapses in artificial neural networks. As an example of our approach, we discuss the architecture of an integrate-and-fire neural network based on memcapacitive synapses. Moreover, we demonstrate that the spike-timing-dependent plasticity can be simply realized with some of these devices. Memcapacitive synapses are a low-energy alternative to memristive synapses for neuromorphic computation. △ Less

Submitted 26 July, 2013; originally announced July 2013.

Journal ref: Electronics Letters 50, 141 (2014)

Dynamic Computing Random Access Memory

Authors: Fabio Lorenzo Traversa, Fabrizio Bonani, Yuriy V. Pershin, Massimiliano Di Ventra

Abstract: The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit (CPU) and memory, with concomitant limitations in the actual execution speed. However, it has been recently argued that a different form of computation, dubbed memcomputing [Nature Physics, 9, 200-202 (2013)] and inspired by the operation of our brain, can resolve the… ▽ More The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit (CPU) and memory, with concomitant limitations in the actual execution speed. However, it has been recently argued that a different form of computation, dubbed memcomputing [Nature Physics, 9, 200-202 (2013)] and inspired by the operation of our brain, can resolve the intrinsic limitations of present day architectures by allowing for computing and storing of information on the same physical platform. Here we show a simple and practical realization of memcomputing that utilizes easy-to-build memcapacitive systems. We name this architecture Dynamic Computing Random Access Memory (DCRAM). We show that DCRAM provides massively-parallel and polymorphic digital logic, namely it allows for different logic operations with the same architecture, by varying only the control signals. In addition, by taking into account realistic parameters, its energy expenditures can be as low as a few fJ per operation. DCRAM is fully compatible with CMOS technology, can be realized with current fabrication facilities, and therefore can really serve as an alternative to the present computing technology. △ Less

Submitted 17 March, 2014; v1 submitted 26 June, 2013; originally announced June 2013.

Journal ref: Nanotechnology, vol. 25, is. 8, pg. 285201 (10pp), year 2014

Self-organization and solution of shortest-path optimization problems with memristive networks

Authors: Yuriy V. Pershin, Massimiliano Di Ventra

Abstract: We show that memristive networks-namely networks of resistors with memory-can efficiently solve shortest-path optimization problems. Indeed, the presence of memory (time non-locality) promotes self organization of the network into the shortest possible path(s). We introduce a network entropy function to characterize the self-organized evolution, show the solution of the shortest-path problem and d… ▽ More We show that memristive networks-namely networks of resistors with memory-can efficiently solve shortest-path optimization problems. Indeed, the presence of memory (time non-locality) promotes self organization of the network into the shortest possible path(s). We introduce a network entropy function to characterize the self-organized evolution, show the solution of the shortest-path problem and demonstrate the healing property of the solution path. Finally, we provide an algorithm to solve the traveling salesman problem. Similar considerations apply to networks of memcapacitors and meminductors, and networks with memory in various dimensions. △ Less

Submitted 5 April, 2013; originally announced April 2013.

Comments: arXiv admin note: substantial text overlap with arXiv:1211.4487

Journal ref: Phys. Rev. E 88, 013305 (2013)

Memcomputing: a computing paradigm to store and process information on the same physical platform

Authors: M. Di Ventra, Y. V. Pershin

Abstract: In present day technology, storing and processing of information occur on physically distinct regions of space. Not only does this result in space limitations; it also translates into unwanted delays in retrieving and processing of relevant information. There is, however, a class of two-terminal passive circuit elements with memory, memristive, memcapacitive and meminductive systems -- collectivel… ▽ More In present day technology, storing and processing of information occur on physically distinct regions of space. Not only does this result in space limitations; it also translates into unwanted delays in retrieving and processing of relevant information. There is, however, a class of two-terminal passive circuit elements with memory, memristive, memcapacitive and meminductive systems -- collectively called memelements -- that perform both information processing and storing of the initial, intermediate and final computational data on the same physical platform. Importantly, the states of these memelements adjust to input signals and provide analog capabilities unavailable in standard circuit elements, resulting in adaptive circuitry, and providing analog massively-parallel computation. All these features are tantalizingly similar to those encountered in the biological realm, thus offering new opportunities for biologically-inspired computation. Of particular importance is the fact that these memelements emerge naturally in nanoscale systems, and are therefore a consequence and a natural by-product of the continued miniaturization of electronic devices. We will discuss the various possibilities offered by memcomputing, discuss the criteria that need to be satisfied to realize this paradigm, and provide an example showing the solution of the shortest-path problem and demonstrate the healing property of the solution path. △ Less

Submitted 7 April, 2013; v1 submitted 19 November, 2012; originally announced November 2012.

Comments: The first part of this paper has been published in Nature Physics 9, 200-202 (2013). The second part has been expanded and is now included in arXiv:1304.1675

Journal ref: Nature Physics 9, 200-202 (2013)

Teaching Memory Circuit Elements via Experiment-Based Learning

Authors: Y. V. Pershin, M. Di Ventra

Abstract: The class of memory circuit elements which comprises memristive, memcapacitive, and meminductive systems, is gaining considerable attention in a broad range of disciplines. This is due to the enormous flexibility these elements provide in solving diverse problems in analog/neuromorphic and digital/quantum computation; the possibility to use them in an integrated computing-memory paradigm, massivel… ▽ More The class of memory circuit elements which comprises memristive, memcapacitive, and meminductive systems, is gaining considerable attention in a broad range of disciplines. This is due to the enormous flexibility these elements provide in solving diverse problems in analog/neuromorphic and digital/quantum computation; the possibility to use them in an integrated computing-memory paradigm, massively-parallel solution of different optimization problems, learning, neural networks, etc. The time is therefore ripe to introduce these elements to the next generation of physicists and engineers with appropriate teaching tools that can be easily implemented in undergraduate teaching laboratories. In this paper, we suggest the use of easy-to-build emulators to provide a hands-on experience for the students to learn the fundamental properties and realize several applications of these memelements. We provide explicit examples of problems that could be tackled with these emulators that range in difficulty from the demonstration of the basic properties of memristive, memcapacitive, and meminductive systems to logic/computation and cross-bar memory. The emulators can be built from off-the-shelf components, with a total cost of a few tens of dollars, thus providing a relatively inexpensive platform for the implementation of these exercises in the classroom. We anticipate that this experiment-based learning can be easily adopted and expanded by the instructors with many more case studies. △ Less

Submitted 22 December, 2011; originally announced December 2011.

Comments: IEEE Circuits and Systems Magazine (in press)

Journal ref: IEEE Circuits and Systems Magazine 12(1), 64-74 (2012)

Solving mazes with memristors: a massively-parallel approach

Authors: Yuriy V. Pershin, Massimiliano Di Ventra

Abstract: Solving mazes is not just a fun pastime. Mazes are prototype models in graph theory, topology, robotics, traffic optimization, psychology, and in many other areas of science and technology. However, when maze complexity increases their solution becomes cumbersome and very time consuming. Here, we show that a network of memristors - resistors with memory - can solve such a non-trivial problem quite… ▽ More Solving mazes is not just a fun pastime. Mazes are prototype models in graph theory, topology, robotics, traffic optimization, psychology, and in many other areas of science and technology. However, when maze complexity increases their solution becomes cumbersome and very time consuming. Here, we show that a network of memristors - resistors with memory - can solve such a non-trivial problem quite easily. In particular, maze solving by the network of memristors occurs in a massively parallel fashion since all memristors in the network participate simultaneously in the calculation. The result of the calculation is then recorded into the memristors' states, and can be used and/or recovered at a later time. Furthermore, the network of memristors finds all possible solutions in multiple-solution mazes, and sorts out the solution paths according to their length. Our results demonstrate not only the first application of memristive networks to the field of massively-parallel computing, but also a novel algorithm to solve mazes which could find applications in different research fields. △ Less

Submitted 16 July, 2011; v1 submitted 28 February, 2011; originally announced March 2011.

Journal ref: Phys. Rev. E 84, 046703 (2011)

Practical approach to programmable analog circuits with memristors

Authors: Yuriy V. Pershin, Massimiliano Di Ventra

Abstract: We suggest an approach to use memristors (resistors with memory) in programmable analog circuits. Our idea consists in a circuit design in which low voltages are applied to memristors during their operation as analog circuit elements and high voltages are used to program the memristor's states. This way, as it was demonstrated in recent experiments, the state of memristors does not essentially c… ▽ More We suggest an approach to use memristors (resistors with memory) in programmable analog circuits. Our idea consists in a circuit design in which low voltages are applied to memristors during their operation as analog circuit elements and high voltages are used to program the memristor's states. This way, as it was demonstrated in recent experiments, the state of memristors does not essentially change during analog mode operation. As an example of our approach, we have built several programmable analog circuits demonstrating memristor-based programming of threshold, gain and frequency. △ Less

Submitted 17 January, 2010; v1 submitted 21 August, 2009; originally announced August 2009.

Journal ref: IEEE Trans.Circuits Theor.57:1857-1964,2010