HashPIM: High-Throughput SHA-3 via Memristive Digital Processing-in-Memory
Authors:
Batel Oved,
Orian Leitersdorf,
Ronny Ronen,
Shahar Kvatinsky
Abstract:
Recent research has sought to accelerate cryptographic hash functions as they are at the core of modern cryptography. Traditional designs, however, suffer from the von Neumann bottleneck that originates from the separation of processing and memory units. An emerging solution to overcome this bottleneck is processing-in-memory (PIM): performing logic within the same devices responsible for memory t…
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Recent research has sought to accelerate cryptographic hash functions as they are at the core of modern cryptography. Traditional designs, however, suffer from the von Neumann bottleneck that originates from the separation of processing and memory units. An emerging solution to overcome this bottleneck is processing-in-memory (PIM): performing logic within the same devices responsible for memory to eliminate data-transfer and simultaneously provide massive computational parallelism. In this paper, we seek to vastly accelerate the state-of-the-art SHA-3 cryptographic function using the memristive memory processing unit (mMPU), a general-purpose memristive PIM architecture. To that end, we propose a novel in-memory algorithm for variable rotation, and utilize an efficient map** of the SHA-3 state vector for memristive crossbar arrays to efficiently exploit PIM parallelism. We demonstrate a massive energy efficiency of 1,422 Gbps/W, improving a state-of-the-art memristive SHA-3 accelerator (SHINE-2) by 4.6x.
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Submitted 1 June, 2022; v1 submitted 26 May, 2022;
originally announced May 2022.
Physical based compact model of Y-Flash memristor for neuromorphic computation
Authors:
Wei Wang,
Loai Danial,
Eric Herbelin,
Barak Hoffer,
Batel Oved,
Tzofnat Greenberg-Toledo,
Evgeny Pikhay,
Yakov Roizin,
Shahar Kvatinsky
Abstract:
Y-Flash memristors utilize the mature technology of single polysilicon floating gate non-volatile memories (NVM). It can be operated in a two-terminal configuration similar to the other emerging memristive devices, i.e., resistive random-access memory (RRAM), phase-change memory (PCM), etc. Fabricated in production complementary metal-oxide-semiconductor (CMOS) technology, Y-Flash memristors allow…
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Y-Flash memristors utilize the mature technology of single polysilicon floating gate non-volatile memories (NVM). It can be operated in a two-terminal configuration similar to the other emerging memristive devices, i.e., resistive random-access memory (RRAM), phase-change memory (PCM), etc. Fabricated in production complementary metal-oxide-semiconductor (CMOS) technology, Y-Flash memristors allow excellent repro-ducibility reflected in high neuromorphic products yields. Working in the subthreshold region, the device can be programmed to a large number of fine-tuned intermediate states in an analog fashion and allows low readout currents (1 nA ~ 5 $μ$ A). However, currently, there are no accurate models to describe the dynamic switching in this type of memristive device and account for multiple operational configurations. In this paper, we provide a physical-based compact model that describes Y-Flash memristor performance both in DC and AC regimes, and consistently describes the dynamic program and erase operations. The model is integrated into the commercial circuit design tools and is ready to be used in applications related to neuromorphic computation.
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Submitted 16 February, 2022;
originally announced February 2022.
