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DustNet: skillful neural network predictions of Saharan dust
Authors:
Trish E. Nowak,
Andy T. Augousti,
Benno I. Simmons,
Stefan Siegert
Abstract:
Suspended in the atmosphere are millions of tonnes of mineral dust which interacts with weather and climate. Accurate representation of mineral dust in weather models is vital, yet remains challenging. Large scale weather models use high power supercomputers and take hours to complete the forecast. Such computational burden allows them to only include monthly climatological means of mineral dust a…
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Suspended in the atmosphere are millions of tonnes of mineral dust which interacts with weather and climate. Accurate representation of mineral dust in weather models is vital, yet remains challenging. Large scale weather models use high power supercomputers and take hours to complete the forecast. Such computational burden allows them to only include monthly climatological means of mineral dust as input states inhibiting their forecasting accuracy. Here, we introduce DustNet a simple, accurate and super fast forecasting model for 24-hours ahead predictions of aerosol optical depth AOD. DustNet trains in less than 8 minutes and creates predictions in 2 seconds on a desktop computer. Created by DustNet predictions outperform the state-of-the-art physics-based model on coarse 1 x 1 degree resolution at 95% of grid locations when compared to ground truth satellite data. Our results show DustNet has a potential for fast and accurate AOD forecasting which could transform our understanding of dust impacts on weather patterns.
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Submitted 17 June, 2024;
originally announced June 2024.
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Model of the Weak Reset Process in HfOx Resistive Memory for Deep Learning Frameworks
Authors:
Atreya Majumdar,
Marc Bocquet,
Tifenn Hirtzlin,
Axel Laborieux,
Jacques-Olivier Klein,
Etienne Nowak,
Elisa Vianello,
Jean-Michel Portal,
Damien Querlioz
Abstract:
The implementation of current deep learning training algorithms is power-hungry, owing to data transfer between memory and logic units. Oxide-based RRAMs are outstanding candidates to implement in-memory computing, which is less power-intensive. Their weak RESET regime, is particularly attractive for learning, as it allows tuning the resistance of the devices with remarkable endurance. However, th…
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The implementation of current deep learning training algorithms is power-hungry, owing to data transfer between memory and logic units. Oxide-based RRAMs are outstanding candidates to implement in-memory computing, which is less power-intensive. Their weak RESET regime, is particularly attractive for learning, as it allows tuning the resistance of the devices with remarkable endurance. However, the resistive change behavior in this regime suffers many fluctuations and is particularly challenging to model, especially in a way compatible with tools used for simulating deep learning. In this work, we present a model of the weak RESET process in hafnium oxide RRAM and integrate this model within the PyTorch deep learning framework. Validated on experiments on a hybrid CMOS/RRAM technology, our model reproduces both the noisy progressive behavior and the device-to-device (D2D) variability. We use this tool to train Binarized Neural Networks for the MNIST handwritten digit recognition task and the CIFAR-10 object classification task. We simulate our model with and without various aspects of device imperfections to understand their impact on the training process and identify that the D2D variability is the most detrimental aspect. The framework can be used in the same manner for other types of memories to identify the device imperfections that cause the most degradation, which can, in turn, be used to optimize the devices to reduce the impact of these imperfections.
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Submitted 2 September, 2021; v1 submitted 2 July, 2021;
originally announced July 2021.
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Implementation of Ternary Weights with Resistive RAM Using a Single Sense Operation per Synapse
Authors:
Axel Laborieux,
Marc Bocquet,
Tifenn Hirtzlin,
Jacques-Olivier Klein,
Etienne Nowak,
Elisa Vianello,
Jean-Michel Portal,
Damien Querlioz
Abstract:
The design of systems implementing low precision neural networks with emerging memories such as resistive random access memory (RRAM) is a significant lead for reducing the energy consumption of artificial intelligence. To achieve maximum energy efficiency in such systems, logic and memory should be integrated as tightly as possible. In this work, we focus on the case of ternary neural networks, w…
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The design of systems implementing low precision neural networks with emerging memories such as resistive random access memory (RRAM) is a significant lead for reducing the energy consumption of artificial intelligence. To achieve maximum energy efficiency in such systems, logic and memory should be integrated as tightly as possible. In this work, we focus on the case of ternary neural networks, where synaptic weights assume ternary values. We propose a two-transistor/two-resistor memory architecture employing a precharge sense amplifier, where the weight value can be extracted in a single sense operation. Based on experimental measurements on a hybrid 130 nm CMOS/RRAM chip featuring this sense amplifier, we show that this technique is particularly appropriate at low supply voltage, and that it is resilient to process, voltage, and temperature variations. We characterize the bit error rate in our scheme. We show based on neural network simulation on the CIFAR-10 image recognition task that the use of ternary neural networks significantly increases neural network performance, with regards to binary ones, which are often preferred for inference hardware. We finally evidence that the neural network is immune to the type of bit errors observed in our scheme, which can therefore be used without error correction.
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Submitted 14 October, 2020; v1 submitted 26 July, 2020;
originally announced July 2020.
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Embracing the Unreliability of Memory Devices for Neuromorphic Computing
Authors:
Marc Bocquet,
Tifenn Hirtzlin,
Jacques-Olivier Klein,
Etienne Nowak,
Elisa Vianello,
Jean-Michel Portal,
Damien Querlioz
Abstract:
The emergence of resistive non-volatile memories opens the way to highly energy-efficient computation near- or in-memory. However, this type of computation is not compatible with conventional ECC, and has to deal with device unreliability. Inspired by the architecture of animal brains, we present a manufactured differential hybrid CMOS/RRAM memory architecture suitable for neural network implement…
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The emergence of resistive non-volatile memories opens the way to highly energy-efficient computation near- or in-memory. However, this type of computation is not compatible with conventional ECC, and has to deal with device unreliability. Inspired by the architecture of animal brains, we present a manufactured differential hybrid CMOS/RRAM memory architecture suitable for neural network implementation that functions without formal ECC. We also show that using low-energy but error-prone programming conditions only slightly reduces network accuracy.
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Submitted 13 July, 2020;
originally announced July 2020.
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In-Memory Resistive RAM Implementation of Binarized Neural Networks for Medical Applications
Authors:
Bogdan Penkovsky,
Marc Bocquet,
Tifenn Hirtzlin,
Jacques-Olivier Klein,
Etienne Nowak,
Elisa Vianello,
Jean-Michel Portal,
Damien Querlioz
Abstract:
The advent of deep learning has considerably accelerated machine learning development. The deployment of deep neural networks at the edge is however limited by their high memory and energy consumption requirements. With new memory technology available, emerging Binarized Neural Networks (BNNs) are promising to reduce the energy impact of the forthcoming machine learning hardware generation, enabli…
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The advent of deep learning has considerably accelerated machine learning development. The deployment of deep neural networks at the edge is however limited by their high memory and energy consumption requirements. With new memory technology available, emerging Binarized Neural Networks (BNNs) are promising to reduce the energy impact of the forthcoming machine learning hardware generation, enabling machine learning on the edge devices and avoiding data transfer over the network. In this work, after presenting our implementation employing a hybrid CMOS - hafnium oxide resistive memory technology, we suggest strategies to apply BNNs to biomedical signals such as electrocardiography and electroencephalography, kee** accuracy level and reducing memory requirements. We investigate the memory-accuracy trade-off when binarizing whole network and binarizing solely the classifier part. We also discuss how these results translate to the edge-oriented Mobilenet~V1 neural network on the Imagenet task. The final goal of this research is to enable smart autonomous healthcare devices.
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Submitted 20 June, 2020;
originally announced June 2020.
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Low Power In-Memory Implementation of Ternary Neural Networks with Resistive RAM-Based Synapse
Authors:
Axel Laborieux,
Marc Bocquet,
Tifenn Hirtzlin,
Jacques-Olivier Klein,
Liza Herrera Diez,
Etienne Nowak,
Elisa Vianello,
Jean-Michel Portal,
Damien Querlioz
Abstract:
The design of systems implementing low precision neural networks with emerging memories such as resistive random access memory (RRAM) is a major lead for reducing the energy consumption of artificial intelligence (AI). Multiple works have for example proposed in-memory architectures to implement low power binarized neural networks. These simple neural networks, where synaptic weights and neuronal…
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The design of systems implementing low precision neural networks with emerging memories such as resistive random access memory (RRAM) is a major lead for reducing the energy consumption of artificial intelligence (AI). Multiple works have for example proposed in-memory architectures to implement low power binarized neural networks. These simple neural networks, where synaptic weights and neuronal activations assume binary values, can indeed approach state-of-the-art performance on vision tasks. In this work, we revisit one of these architectures where synapses are implemented in a differential fashion to reduce bit errors, and synaptic weights are read using precharge sense amplifiers. Based on experimental measurements on a hybrid 130 nm CMOS/RRAM chip and on circuit simulation, we show that the same memory array architecture can be used to implement ternary weights instead of binary weights, and that this technique is particularly appropriate if the sense amplifier is operated in near-threshold regime. We also show based on neural network simulation on the CIFAR-10 image recognition task that going from binary to ternary neural networks significantly increases neural network performance. These results highlight that AI circuits function may sometimes be revisited when operated in low power regimes.
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Submitted 5 May, 2020;
originally announced May 2020.
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Digital Biologically Plausible Implementation of Binarized Neural Networks with Differential Hafnium Oxide Resistive Memory Arrays
Authors:
Tifenn Hirtzlin,
Marc Bocquet,
Bogdan Penkovsky,
Jacques-Olivier Klein,
Etienne Nowak,
Elisa Vianello,
Jean-Michel Portal,
Damien Querlioz
Abstract:
The brain performs intelligent tasks with extremely low energy consumption. This work takes inspiration from two strategies used by the brain to achieve this energy efficiency: the absence of separation between computing and memory functions, and the reliance on low precision computation. The emergence of resistive memory technologies indeed provides an opportunity to co-integrate tightly logic an…
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The brain performs intelligent tasks with extremely low energy consumption. This work takes inspiration from two strategies used by the brain to achieve this energy efficiency: the absence of separation between computing and memory functions, and the reliance on low precision computation. The emergence of resistive memory technologies indeed provides an opportunity to co-integrate tightly logic and memory in hardware. In parallel, the recently proposed concept of Binarized Neural Network, where multiplications are replaced by exclusive NOR (XNOR) logic gates, offers a way to implement artificial intelligence using very low precision computation. In this work, we therefore propose a strategy to implement low energy Binarized Neural Networks, which employs brain-inspired concepts, while retaining energy benefits from digital electronics. We design, fabricate and test a memory array, including periphery and sensing circuits, optimized for this in-memory computing scheme. Our circuit employs hafnium oxide resistive memory integrated in the back end of line of a 130 nanometer CMOS process, in a two transistors - two resistors cell, which allows performing the exclusive NOR operations of the neural network directly within the sense amplifiers. We show, based on extensive electrical measurements, that our design allows reducing the amount of bit errors on the synaptic weights, without the use of formal error correcting codes. We design a whole system using this memory array. We show on standard machine learning tasks (MNIST, CIFAR-10, ImageNet and an ECG task) that the system has an inherent resilience to bit errors. We evidence that its energy consumption is attractive compared to more standard approaches, and that it can use the memory devices in regimes where they exhibit particularly low programming energy and high endurance.
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Submitted 7 December, 2019; v1 submitted 12 August, 2019;
originally announced August 2019.
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Koopman Representations of Dynamic Systems with Control
Authors:
Craig Bakker,
Steven Rosenthal,
Kathleen E. Nowak
Abstract:
The design and analysis of optimal control policies for dynamical systems can be complicated by nonlinear dependence in the state variables. Koopman operators have been used to simplify the analysis of dynamical systems by map** the flow of the system onto a space of observables where the dynamics are linear (and possibly infinte). This paper focuses on the development of consistent Koopman repr…
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The design and analysis of optimal control policies for dynamical systems can be complicated by nonlinear dependence in the state variables. Koopman operators have been used to simplify the analysis of dynamical systems by map** the flow of the system onto a space of observables where the dynamics are linear (and possibly infinte). This paper focuses on the development of consistent Koopman representations for controlled dynamical system. We introduce the concept of dynamical consistency for Koopman representations and analyze several existing and proposed representations deriving necessary constraints on the dynamical system, observables, and Koopman operators. Our main result is a hybrid formulation which independently and jointly observes the state and control inputs. This formulation admits a relatively large space of dynamical systems compared to earlier formulations while kee** the Koopman operator independent of the state and control inputs. More generally, this work provides an analysis framework to evaluate and rank proposed simplifications to the general Koopman representation for controlled dynamical systems.
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Submitted 6 August, 2019;
originally announced August 2019.
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Relative Hausdorff Distance for Network Analysis
Authors:
Sinan G. Aksoy,
Kathleen E. Nowak,
Emilie Purvine,
Stephen J. Young
Abstract:
Similarity measures are used extensively in machine learning and data science algorithms. The newly proposed graph Relative Hausdorff (RH) distance is a lightweight yet nuanced similarity measure for quantifying the closeness of two graphs. In this work we study the effectiveness of RH distance as a tool for detecting anomalies in time-evolving graph sequences. We apply RH to cyber data with given…
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Similarity measures are used extensively in machine learning and data science algorithms. The newly proposed graph Relative Hausdorff (RH) distance is a lightweight yet nuanced similarity measure for quantifying the closeness of two graphs. In this work we study the effectiveness of RH distance as a tool for detecting anomalies in time-evolving graph sequences. We apply RH to cyber data with given red team events, as well to synthetically generated sequences of graphs with planted attacks. In our experiments, the performance of RH distance is at times comparable, and sometimes superior, to graph edit distance in detecting anomalous phenomena. Our results suggest that in appropriate contexts, RH distance has advantages over more computationally intensive similarity measures.
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Submitted 12 June, 2019;
originally announced June 2019.
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Outstanding Bit Error Tolerance of Resistive RAM-Based Binarized Neural Networks
Authors:
Tifenn Hirtzlin,
Marc Bocquet,
Jacques-Olivier Klein,
Etienne Nowak,
Elisa Vianello,
Jean-Michel Portal,
Damien Querlioz
Abstract:
Resistive random access memories (RRAM) are novel nonvolatile memory technologies, which can be embedded at the core of CMOS, and which could be ideal for the in-memory implementation of deep neural networks. A particularly exciting vision is using them for implementing Binarized Neural Networks (BNNs), a class of deep neural networks with a highly reduced memory footprint. The challenge of resist…
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Resistive random access memories (RRAM) are novel nonvolatile memory technologies, which can be embedded at the core of CMOS, and which could be ideal for the in-memory implementation of deep neural networks. A particularly exciting vision is using them for implementing Binarized Neural Networks (BNNs), a class of deep neural networks with a highly reduced memory footprint. The challenge of resistive memory, however, is that they are prone to device variation, which can lead to bit errors. In this work we show that BNNs can tolerate these bit errors to an outstanding level, through simulations of networks on the MNIST and CIFAR10 tasks. If a standard BNN is used, up to 10^-4 bit error rate can be tolerated with little impact on recognition performance on both MNIST and CIFAR10. We then show that by adapting the training procedure to the fact that the BNN will be operated on error-prone hardware, this tolerance can be extended to a bit error rate of 4x10^-2. The requirements for RRAM are therefore a lot less stringent for BNNs than more traditional applications. We show, based on experimental measurements on a RRAM HfO2 technology, that this result can allow reduce RRAM programming energy by a factor 30.
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Submitted 7 April, 2019;
originally announced April 2019.
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A linear-time algorithm and analysis of graph Relative Hausdorff distance
Authors:
Sinan G. Aksoy,
Kathleen E. Nowak,
Stephen J. Young
Abstract:
Graph similarity metrics serve far-ranging purposes across many domains in data science. As graph datasets grow in size, scientists need comparative tools that capture meaningful differences, yet are lightweight and scalable. Graph Relative Hausdorff (RH) distance is a promising, recently proposed measure for quantifying degree distribution similarity. In spite of recent interest in RH distance, l…
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Graph similarity metrics serve far-ranging purposes across many domains in data science. As graph datasets grow in size, scientists need comparative tools that capture meaningful differences, yet are lightweight and scalable. Graph Relative Hausdorff (RH) distance is a promising, recently proposed measure for quantifying degree distribution similarity. In spite of recent interest in RH distance, little is known about its properties. Here, we conduct an algorithmic and analytic study of RH distance. In particular, we provide the first linear-time algorithm for computing RH distance, analyze examples of RH distance between pairs of real-world networks as well as structured families of graphs, and prove several analytic results concerning the range, density, and extremal behavior of RH distance values.
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Submitted 7 August, 2019; v1 submitted 5 March, 2019;
originally announced March 2019.
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In-Memory and Error-Immune Differential RRAM Implementation of Binarized Deep Neural Networks
Authors:
Marc Bocquet,
Tifenn Hirztlin,
Jacques-Olivier Klein,
Etienne Nowak,
Elisa Vianello,
Jean-Michel Portal,
Damien Querlioz
Abstract:
RRAM-based in-Memory Computing is an exciting road for implementing highly energy efficient neural networks. This vision is however challenged by RRAM variability, as the efficient implementation of in-memory computing does not allow error correction. In this work, we fabricated and tested a differential HfO2-based memory structure and its associated sense circuitry, which are ideal for in-memory…
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RRAM-based in-Memory Computing is an exciting road for implementing highly energy efficient neural networks. This vision is however challenged by RRAM variability, as the efficient implementation of in-memory computing does not allow error correction. In this work, we fabricated and tested a differential HfO2-based memory structure and its associated sense circuitry, which are ideal for in-memory computing. For the first time, we show that our approach achieves the same reliability benefits as error correction, but without any CMOS overhead. We show, also for the first time, that it can naturally implement Binarized Deep Neural Networks, a very recent development of Artificial Intelligence, with extreme energy efficiency, and that the system is fully satisfactory for image recognition applications. Finally, we evidence how the extra reliability provided by the differential memory allows programming the devices in low voltage conditions, where they feature high endurance of billions of cycles.
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Submitted 7 February, 2019;
originally announced February 2019.