-
Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors
Authors:
Henriette Padberg,
Amir Regev,
Giuseppe Piccolboni,
Alessandro Bricalli,
Gabriel Molas,
Jean Francois Nodin,
Shahar Kvatinsky
Abstract:
Processing-in-memory (PIM) is attractive to overcome the limitations of modern computing systems. Numerous PIM systems exist, varying by the technologies and logic techniques used. Successful operation of specific logic functions is crucial for effective processing-in-memory. Memristive non-stateful logic techniques are compatible with CMOS logic and can be integrated into a 1T1R memory array, sim…
▽ More
Processing-in-memory (PIM) is attractive to overcome the limitations of modern computing systems. Numerous PIM systems exist, varying by the technologies and logic techniques used. Successful operation of specific logic functions is crucial for effective processing-in-memory. Memristive non-stateful logic techniques are compatible with CMOS logic and can be integrated into a 1T1R memory array, similar to commercial RRAM products. This paper analyzes and demonstrates two non-stateful logic techniques: 1T1R logic and scouting logic. As a first step, the used 1T1R SiO\textsubscript{x} valence change mechanism memristors are characterized in reference to their feasibility to perform logic functions. Various logical functions of the two logic techniques are experimentally demonstrated, showing correct functionality in all cases. Following the results, the challenges and limitations of the RRAM characteristics and 1T1R configuration for the application in logical functions are discussed.
△ Less
Submitted 6 October, 2023;
originally announced October 2023.
-
Fully-Binarized, Parallel, RRAM-based Computing Primitive for In-Memory Similarity Search
Authors:
Sandeep Kaur Kingra,
Vivek Parmar,
Deepak Verma,
Alessandro Bricalli,
Giuseppe Piccolboni,
Gabriel Molas,
Amir Regev,
Manan Suri
Abstract:
In this work, we propose a fully-binarized XOR-based IMSS (In-Memory Similarity Search) using RRAM (Resistive Random Access Memory) arrays. XOR (Exclusive OR) operation is realized using 2T-2R bitcells arranged along the column in an array. This enables simultaneous match operation across multiple stored data vectors by performing analog column-wise XOR operation and summation to compute HD (Hammi…
▽ More
In this work, we propose a fully-binarized XOR-based IMSS (In-Memory Similarity Search) using RRAM (Resistive Random Access Memory) arrays. XOR (Exclusive OR) operation is realized using 2T-2R bitcells arranged along the column in an array. This enables simultaneous match operation across multiple stored data vectors by performing analog column-wise XOR operation and summation to compute HD (Hamming Distance). The proposed scheme is experimentally validated on fabricated RRAM arrays. Full-system validation is performed through SPICE simulations using open source Skywater 130 nm CMOS PDK demonstrating energy of 17 fJ per XOR operation using the proposed bitcell with a full-system power dissipation of 145 $μ$W. Using projected estimations at advanced nodes (28 nm) energy savings of $\approx$1.5$\times$ compared to the state-of-the-art can be observed for a fixed workload. Application-level validation is performed on HSI (Hyper-Spectral Image) pixel classification task using the Salinas dataset demonstrating an accuracy of 90%.
△ Less
Submitted 18 September, 2022; v1 submitted 4 August, 2022;
originally announced August 2022.
-
A High Throughput Generative Vector Autoregression Model for Stochastic Synapses
Authors:
T. Hennen,
A. Elias,
J. F. Nodin,
G. Molas,
R. Waser,
D. J. Wouters,
D. Bedau
Abstract:
By imitating the synaptic connectivity and plasticity of the brain, emerging electronic nanodevices offer new opportunities as the building blocks of neuromorphic systems. One challenge for largescale simulations of computational architectures based on emerging devices is to accurately capture device response, hysteresis, noise, and the covariance structure in the temporal domain as well as betwee…
▽ More
By imitating the synaptic connectivity and plasticity of the brain, emerging electronic nanodevices offer new opportunities as the building blocks of neuromorphic systems. One challenge for largescale simulations of computational architectures based on emerging devices is to accurately capture device response, hysteresis, noise, and the covariance structure in the temporal domain as well as between the different device parameters. We address this challenge with a high throughput generative model for synaptic arrays that is based on a recently available type of electrical measurement data for resistive memory cells. We map this real world data onto a vector autoregressive stochastic process to accurately reproduce the device parameters and their cross-correlation structure. While closely matching the measured data, our model is still very fast; we provide parallelized implementations for both CPUs and GPUs and demonstrate array sizes above one billion cells and throughputs exceeding one hundred million weight updates per second, above the pixel rate of a 30 frames/s 4K video stream.
△ Less
Submitted 10 May, 2022;
originally announced May 2022.
-
Hardware calibrated learning to compensate heterogeneity in analog RRAM-based Spiking Neural Networks
Authors:
Filippo Moro,
E. Esmanhotto,
T. Hirtzlin,
N. Castellani,
A. Trabelsi,
T. Dalgaty,
G. Molas,
F. Andrieu,
S. Brivio,
S. Spiga,
G. Indiveri,
M. Payvand,
E. Vianello
Abstract:
Spiking Neural Networks (SNNs) can unleash the full power of analog Resistive Random Access Memories (RRAMs) based circuits for low power signal processing. Their inherent computational sparsity naturally results in energy efficiency benefits. The main challenge implementing robust SNNs is the intrinsic variability (heterogeneity) of both analog CMOS circuits and RRAM technology. In this work, we…
▽ More
Spiking Neural Networks (SNNs) can unleash the full power of analog Resistive Random Access Memories (RRAMs) based circuits for low power signal processing. Their inherent computational sparsity naturally results in energy efficiency benefits. The main challenge implementing robust SNNs is the intrinsic variability (heterogeneity) of both analog CMOS circuits and RRAM technology. In this work, we assessed the performance and variability of RRAM-based neuromorphic circuits that were designed and fabricated using a 130\,nm technology node. Based on these results, we propose a Neuromorphic Hardware Calibrated (NHC) SNN, where the learning circuits are calibrated on the measured data. We show that by taking into account the measured heterogeneity characteristics in the off-chip learning phase, the NHC SNN self-corrects its hardware non-idealities and learns to solve benchmark tasks with high accuracy. This work demonstrates how to cope with the heterogeneity of neurons and synapses for increasing classification accuracy in temporal tasks.
△ Less
Submitted 10 February, 2022;
originally announced February 2022.
