Development of monitoring systems for anomaly detection using ASTD specifications
Authors:
El Jabri Chaymae,
Frappier Marc,
Ecarot Thibaud,
Tardif Pierre-Martin
Abstract:
Anomaly-based intrusion detection systems are essential defenses against cybersecurity threats because they can identify anomalies in current activities. However, these systems have difficulties providing entity processing independence through a programming language. In addition, a degradation of the detection process is caused by the complexity of scheduling the training and detection processes,…
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Anomaly-based intrusion detection systems are essential defenses against cybersecurity threats because they can identify anomalies in current activities. However, these systems have difficulties providing entity processing independence through a programming language. In addition, a degradation of the detection process is caused by the complexity of scheduling the training and detection processes, which are required to keep the anomaly detection system continuously updated. This paper shows how to use the algebraic state-transition diagram (ASTD) language to develop flexible anomaly detection systems. This paper provides a model for detecting point anomalies using the unsupervised non-parametric technique Kernel Density Estimation to estimate the probability density of event occurrence. The proposed model caters for both the training and the detection phase continuously. The ASTD language streamlines the modeling of detection systems thanks to its process algebraic operators that provide a solution to overcome these challenges. By delegating the combination of anomaly-based detection processes to the ASTD language, the effort and complexity are reduced during detection models development. Finally, using a qualitative evaluation, this study demonstrates that the algebraic operators in the ASTD specification language overcome these challenges.
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Submitted 22 July, 2022;
originally announced July 2022.
3D logic cells design and results based on Vertical NWFET technology including tied compact model
Authors:
C. Mukherjee,
M. Deng,
F. Marc,
C. Maneux,
A. Poittevin,
I. OConnor,
S. Le Beux,
A. Kumar,
A. Lecestre,
G. Larrieu
Abstract:
Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the technology in the context of logic cell design. We describe a junctionless nanowire technology and associated compact model, which accurately describes fabricated…
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Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the technology in the context of logic cell design. We describe a junctionless nanowire technology and associated compact model, which accurately describes fabricated device behavior in all regions of operations for transistors based on between 16 and 625 parallel nanowires of diameters between 22 and 50nm. We used this model to simulate the projected performance of inverter logic gates based on passive load, active load and complementary topologies and carry out an performance exploration for the number of nanowires in transistors. In terms of compactness, through a dedicated full 3D layout design, we also demonstrate a 1.4x reduction in lateral dimensions for the complementary structure with respect to 7nm FinFET-based inverters.
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Submitted 28 May, 2020;
originally announced May 2020.
