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Pinning Fault Mode Modeling for DWM Shifting
Authors:
Kawsher Roxy,
Stephen Longofono,
Sebastien Olliver,
Sanjukta Bhanja,
Alex K. Jones
Abstract:
Extreme scaling for purposes of achieving higher density and lower energy continues to increase the probability of memory faults. For domain wall (DW) memories, misalignment faults arise when aligning domains with access points. A previously understudied type of shifting fault, a pinning fault may occur due to non-uniform pinning potential distribution caused by notches with fabrication imperfecti…
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Extreme scaling for purposes of achieving higher density and lower energy continues to increase the probability of memory faults. For domain wall (DW) memories, misalignment faults arise when aligning domains with access points. A previously understudied type of shifting fault, a pinning fault may occur due to non-uniform pinning potential distribution caused by notches with fabrication imperfections. This non-uniformity can pin a wall during current-induced DW motion. This paper provides a model of geometric variations varying width, depth, and curvature variations of a notch, their impacts on the critical shift current, and a study of the resulting impact on fault rates of DW memory systems. An increase in the effective critical shift current due to 5% variation predicts a pinning fault rate on the order of $10^{-8}$ per shift, which results in a mean-time-to-failure of circa 2s for a DW memory system.
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Submitted 15 March, 2022;
originally announced March 2022.
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Virtual Coset Coding for Encrypted Non-Volatile Memories with Multi-Level Cells
Authors:
Stephen Longofono,
Seyed Mohammad Seyedzadeh,
Alex K. Jones
Abstract:
PCM is a popular backing memory for DRAM main memory in tiered memory systems. PCM has asymmetric access energy; writes dominate reads. MLC asymmetry can vary by an order of magnitude. Many schemes have been developed to take advantage of the asymmetric patterns of 0s and 1s in the data to reduce write energy. Because the memory is non-volatile, data can be recovered via physical attack or across…
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PCM is a popular backing memory for DRAM main memory in tiered memory systems. PCM has asymmetric access energy; writes dominate reads. MLC asymmetry can vary by an order of magnitude. Many schemes have been developed to take advantage of the asymmetric patterns of 0s and 1s in the data to reduce write energy. Because the memory is non-volatile, data can be recovered via physical attack or across system reboot cycles. To protect information stored in PCM against these attacks requires encryption. Unfortunately, most encryption algorithms scramble 0s and 1s in the data, effectively removing any patterns and negatively impacting schemes that leverage data bias and similarity to reduce write energy. In this paper, we introduce Virtual Coset Coding (VCC) as a workload-independent approach that reduces costly symbol transitions for storing encrypted data. VCC is based on two ideas. First, using coset encoding with random coset candidates, it is possible to effectively reduce the frequency of costly bit/symbol transitions when writing encrypted data. Second, a small set of random substrings can be used to achieve the same encoding efficiency as a large number of random coset candidates, but at a much lower encoding/decoding cost. Additionally, we demonstrate how VCC can be leveraged for energy reduction in combination with fault-mitigation and fault-tolerance to dramatically increase the lifetimes of endurance-limited NVMs, such as PCM. We evaluate the design of VCC and demonstrate that it can be implemented on-chip with only a nominal area overhead. VCC reduces dynamic energy by 22-28% while maintaining the same performance. Using our multi-objective optimization approach achieves at least a 36% improvement in lifetime over the state-of-the-art and at least a 50% improvement in lifetime vs. an unencoded memory, while maintaining its energy savings and system performance.
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Submitted 2 December, 2021;
originally announced December 2021.
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Brain-inspired Cognition in Next Generation Racetrack Memories
Authors:
Asif Ali Khan,
Sebastien Ollivier,
Stephen Longofono,
Gerald Hempel,
Jeronimo Castrillon,
Alex K. Jones
Abstract:
Hyperdimensional computing (HDC) is an emerging computational framework inspired by the brain that operates on vectors with thousands of dimensions to emulate cognition. Unlike conventional computational frameworks that operate on numbers, HDC, like the brain, uses high dimensional random vectors and is capable of one-shot learning. HDC is based on a well-defined set of arithmetic operations and i…
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Hyperdimensional computing (HDC) is an emerging computational framework inspired by the brain that operates on vectors with thousands of dimensions to emulate cognition. Unlike conventional computational frameworks that operate on numbers, HDC, like the brain, uses high dimensional random vectors and is capable of one-shot learning. HDC is based on a well-defined set of arithmetic operations and is highly error-resilient. The core operations of HDC manipulate HD vectors in bulk bit-wise fashion, offering many opportunities to leverage parallelism. Unfortunately, on conventional Von-Neuman architectures, the continuous movement of HD vectors among the processor and the memory can make the cognition task prohibitively slow and energy-intensive. Hardware accelerators only marginally improve related metrics. On the contrary, only partial implementation of an HDC framework inside memory, using emerging memristive devices, has reported considerable performance/energy gains. This paper presents an architecture based on racetrack memory (RTM) to conduct and accelerate the entire HDC framework within the memory. The proposed solution requires minimal additional CMOS circuitry and uses a read operation across multiple domains in RTMs called transverse read (TR) to realize exclusive-or (XOR) and addition operations. To minimize the overhead the CMOS circuitry, we propose an RTM nanowires-based counting mechanism that leverages the TR operation and the standard RTM operations. Using language recognition as the use case demonstrates 7.8x and 5.3x reduction in the overall runtime and energy consumption compared to the FPGA design, respectively. Compared to the state-of-the-art in-memory implementation, the proposed HDC system reduces the energy consumption by 8.6x.
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Submitted 15 March, 2022; v1 submitted 3 November, 2021;
originally announced November 2021.
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PIRM: Processing In Racetrack Memories
Authors:
Sebastien Ollivier,
Stephen Longofono,
Prayash Dutta,
**gtong Hu,
Sanjukta Bhanja,
Alex K. Jones
Abstract:
The growth in data needs of modern applications has created significant challenges for modern systems leading a "memory wall." Spintronic Domain Wall Memory (DWM), related to Spin-Transfer Torque Memory (STT-MRAM), provides near-SRAM read/write performance, energy savings and nonvolatility, potential for extremely high storage density, and does not have significant endurance limitations. However,…
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The growth in data needs of modern applications has created significant challenges for modern systems leading a "memory wall." Spintronic Domain Wall Memory (DWM), related to Spin-Transfer Torque Memory (STT-MRAM), provides near-SRAM read/write performance, energy savings and nonvolatility, potential for extremely high storage density, and does not have significant endurance limitations. However, DWM's benefits cannot address data access latency and throughput limitations of memory bus bandwidth. We propose PIRM, a DWM-based in-memory computing solution that leverages the properties of DWM nanowires and allows them to serve as polymorphic gates. While normally DWM is accessed by applying spin polarized currents orthogonal to the nanowire at access points to read individual bits, transverse access along the DWM nanowire allows the differentiation of the aggregate resistance of multiple bits in the nanowire, akin to a multilevel cell. PIRM leverages this transverse reading to directly provide bulk-bitwise logic of multiple adjacent operands in the nanowire, simultaneously. Based on this in-memory logic, PIRM provides a technique to conduct multi-operand addition and two operand multiplication using transverse access. PIRM provides a 1.6x speedup compared to the leading DRAM PIM technique for query applications that leverage bulk bitwise operations. Compared to the leading PIM technique for DWM, PIRM improves performance by 6.9x, 2.3x and energy by 5.5x, 3.4x for 8-bit addition and multiplication, respectively. For arithmetic heavy benchmarks, PIRM reduces access latency by 2.1x, while decreasing energy consumption by 25.2x for a reasonable 10% area overhead versus non-PIM DWM.
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Submitted 1 August, 2022; v1 submitted 2 August, 2021;
originally announced August 2021.
