An Efficient and Accurate Memristive Memory for Array-based Spiking Neural Networks
Authors:
Hritom Das,
Rocco D. Febbo,
SNB Tushar,
Nishith N. Chakraborty,
Maximilian Liehr,
Nathaniel Cady,
Garrett S. Rose
Abstract:
Memristors provide a tempting solution for weighted synapse connections in neuromorphic computing due to their size and non-volatile nature. However, memristors are unreliable in the commonly used voltage-pulse-based programming approaches and require precisely shaped pulses to avoid programming failure. In this paper, we demonstrate a current-limiting-based solution that provides a more predictab…
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Memristors provide a tempting solution for weighted synapse connections in neuromorphic computing due to their size and non-volatile nature. However, memristors are unreliable in the commonly used voltage-pulse-based programming approaches and require precisely shaped pulses to avoid programming failure. In this paper, we demonstrate a current-limiting-based solution that provides a more predictable analog memory behavior when reading and writing memristive synapses. With our proposed design READ current can be optimized by about 19x compared to the 1T1R design. Moreover, our proposed design saves about 9x energy compared to the 1T1R design. Our 3T1R design also shows promising write operation which is less affected by the process variation in MOSFETs and the inherent stochastic behavior of memristors. Memristors used for testing are hafnium oxide based and were fabricated in a 65nm hybrid CMOS-memristor process. The proposed design also shows linear characteristics between the voltage applied and the resulting resistance for the writing operation. The simulation and measured data show similar patterns with respect to voltage pulse-based programming and current compliance-based programming. We further observed the impact of this behavior on neuromorphic-specific applications such as a spiking neural network
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Submitted 6 September, 2023; v1 submitted 10 June, 2023;
originally announced June 2023.
In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory
Authors:
B. L. Ji,
H. Li,
Q. Ye,
S. Gausepohl,
S. Deora,
D. Veksler,
S. Vivekanand,
H. Chong,
H. Stamper,
T. Burroughs,
C. Johnson,
M. Smalley,
S. Bennett,
V. Kaushik,
J. Piccirillo,
M. Rodgers,
M. Passaro,
M. Liehr
Abstract:
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is dev…
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Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is developed to derive BERs as functions of the design margin, to provide guidance for technology evaluation and product design. The proposed BER calculation can also be used in the off-line bench test and build-in-self-test (BIST) for adaptive error correction and for the other types of random access memories.
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Submitted 31 August, 2015;
originally announced September 2015.
