3D logic cells design and results based on Vertical NWFET technology including tied compact model
Authors:
C. Mukherjee,
M. Deng,
F. Marc,
C. Maneux,
A. Poittevin,
I. OConnor,
S. Le Beux,
A. Kumar,
A. Lecestre,
G. Larrieu
Abstract:
Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the technology in the context of logic cell design. We describe a junctionless nanowire technology and associated compact model, which accurately describes fabricated…
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Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the technology in the context of logic cell design. We describe a junctionless nanowire technology and associated compact model, which accurately describes fabricated device behavior in all regions of operations for transistors based on between 16 and 625 parallel nanowires of diameters between 22 and 50nm. We used this model to simulate the projected performance of inverter logic gates based on passive load, active load and complementary topologies and carry out an performance exploration for the number of nanowires in transistors. In terms of compactness, through a dedicated full 3D layout design, we also demonstrate a 1.4x reduction in lateral dimensions for the complementary structure with respect to 7nm FinFET-based inverters.
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Submitted 28 May, 2020;
originally announced May 2020.
Pushing the limits of optical information storage using deep learning
Authors:
Peter R. Wiecha,
Aurélie Lecestre,
Nicolas Mallet,
Guilhem Larrieu
Abstract:
Diffraction drastically limits the bit density in optical data storage. To increase the storage density, alternative strategies involving supplementary recording dimensions and robust read-out schemes must be explored. Here, we propose to encode multiple bits of information in the geometry of subwavelength dielectric nanostructures. A crucial problem in high-density information storage concepts is…
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Diffraction drastically limits the bit density in optical data storage. To increase the storage density, alternative strategies involving supplementary recording dimensions and robust read-out schemes must be explored. Here, we propose to encode multiple bits of information in the geometry of subwavelength dielectric nanostructures. A crucial problem in high-density information storage concepts is the robustness of the information readout with respect to fabrication errors and experimental noise. Using a machine-learning based approach in which the scattering spectra are analyzed by an artificial neural network, we achieve quasi error free read-out of sequences of up to 9 bit, encoded in top-down fabricated silicon nanostructures. We demonstrate that probing few wavelengths instead of the entire spectrum is sufficient for robust information retrieval and that the readout can be further simplified, exploiting the RGB values from microscopy images. Our work paves the way towards high-density optical information storage using planar silicon nanostructures, compatible with mass-production ready CMOS technology.
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Submitted 9 October, 2018; v1 submitted 9 May, 2018;
originally announced May 2018.
