-
Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing
Authors:
Raffaele De Rose,
Tommaso Zanotti,
Francesco Maria Puglisi,
Felice Crupi,
Paolo Pavan,
Marco Lanuzza
Abstract:
Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-efficient Logic-in-Memory (LIM) architectures based on non-volatile resistive memory devices. The SIMPLY logic is enabled by adding a comparator to the conventional IMPLY scheme. This allows performing a preliminary READ operation and hence the SET operation only in the case it is actually required. This…
▽ More
Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-efficient Logic-in-Memory (LIM) architectures based on non-volatile resistive memory devices. The SIMPLY logic is enabled by adding a comparator to the conventional IMPLY scheme. This allows performing a preliminary READ operation and hence the SET operation only in the case it is actually required. This work explores the SIMPLY logic scheme using nanoscale spin-transfer torque magnetic tunnel junction (STT-MTJ) devices. The performance of the STT-MTJ based SIMPLY architecture is analyzed by varying the load resistor and applied voltages to implement both READ and SET operations, while also investigating the effect of temperature on circuit operation. Obtained results show an existing tradeoff between error rate and energy consumption, which can be effectively managed by properly setting the values of load resistor and applied voltages. In addition, our analysis proves that tracking the temperature dependence of the MTJ properties through a proportional to absolute temperature (PTAT) reference voltage at the input of the comparator is beneficial to mitigate the reliability degradation under temperature variations.
△ Less
Submitted 19 May, 2022;
originally announced May 2022.
-
Adjusting Thermal Stability in Double-Barrier MTJ for Energy Improvement in Cryogenic STT-MRAMs
Authors:
Esteban Garzón,
Raffaele De Rose,
Felice Crupi,
Lionel Trojman,
Adam Teman,
Marco Lanuzza
Abstract:
This paper investigates the impact of thermal stability relaxation in double-barrier magnetic tunnel junctions (DMTJs) for energy-efficient spin-transfer torque magnetic random access memories (STT-MRAMs) operating at the liquid nitrogen boiling point (77K). Our study is carried out through a macrospin-based Verilog-A compact model of DMTJ, along with a 65nm commercial process design kit (PDK) cal…
▽ More
This paper investigates the impact of thermal stability relaxation in double-barrier magnetic tunnel junctions (DMTJs) for energy-efficient spin-transfer torque magnetic random access memories (STT-MRAMs) operating at the liquid nitrogen boiling point (77K). Our study is carried out through a macrospin-based Verilog-A compact model of DMTJ, along with a 65nm commercial process design kit (PDK) calibrated down to 77K under silicon measurements. Comprehensive bitcell-level electrical characterization is used to estimate the energy/latency per operation and leakage power at the memory architecture-level. As a main result of our analysis, we show that energy-efficient small-to-large embedded memories can be obtained by significantly relaxing the non-volatility requirement of DMTJ devices at room temperature (i.e., by reducing the cross-section area), while maintaining the typical 10-years retention time at cryogenic temperatures. This makes DMTJ-based STT-MRAM operating at 77K more energy-efficient than six-transistors static random-access memory (6T-SRAM) under both read and write accesses (-56% and -37% on average, respectively). Obtained results thus prove that DMTJ-based STT-MRAM with relaxed retention time is a promising alternative for the realization of reliable and energy-efficient embedded memories operating at cryogenic temperatures.
△ Less
Submitted 20 April, 2022;
originally announced April 2022.
-
Hamming Distance Tolerant Content-Addressable Memory (HD-CAM) for Approximate Matching Applications
Authors:
Esteban Garzón,
Roman Golman,
Zuher Jahshan,
Robert Hanhan,
Natan Vinshtok-Melnik,
Marco Lanuzza,
Adam Teman,
Leonid Yavits
Abstract:
We propose a novel Hamming distance tolerant content-addressable memory (HD-CAM) for energy-efficient in memory approximate matching applications. HD-CAM implements approximate search using matchline charge redistribution rather than its rise or fall time, frequently employed in state of-the-art solutions. HD-CAM was designed in a 65 nm 1.2 V CMOS technology and evaluated through extensive Monte C…
▽ More
We propose a novel Hamming distance tolerant content-addressable memory (HD-CAM) for energy-efficient in memory approximate matching applications. HD-CAM implements approximate search using matchline charge redistribution rather than its rise or fall time, frequently employed in state of-the-art solutions. HD-CAM was designed in a 65 nm 1.2 V CMOS technology and evaluated through extensive Monte Carlo simulations. Our analysis shows that HD-CAM supports robust operation under significant process variations and changes in the design parameters, enabling a wide range of mismatch threshold (tolerable Hamming distance) levels and pattern lengths. HD-CAM was functionally evaluated for virus DNA classification, which makes HD-CAM suitable for hardware acceleration of genomic surveillance of viral outbreaks such as Covid-19 pandemics.
△ Less
Submitted 18 November, 2021;
originally announced November 2021.
