Identifying Pauli spin blockade using deep learning
Authors:
Jonas Schuff,
Dominic T. Lennon,
Simon Geyer,
David L. Craig,
Federico Fedele,
Florian Vigneau,
Leon C. Camenzind,
Andreas V. Kuhlmann,
G. Andrew D. Briggs,
Dominik M. Zumbühl,
Dino Sejdinovic,
Natalia Ares
Abstract:
Pauli spin blockade (PSB) can be employed as a great resource for spin qubit initialisation and readout even at elevated temperatures but it can be difficult to identify. We present a machine learning algorithm capable of automatically identifying PSB using charge transport measurements. The scarcity of PSB data is circumvented by training the algorithm with simulated data and by using cross-devic…
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Pauli spin blockade (PSB) can be employed as a great resource for spin qubit initialisation and readout even at elevated temperatures but it can be difficult to identify. We present a machine learning algorithm capable of automatically identifying PSB using charge transport measurements. The scarcity of PSB data is circumvented by training the algorithm with simulated data and by using cross-device validation. We demonstrate our approach on a silicon field-effect transistor device and report an accuracy of 96% on different test devices, giving evidence that the approach is robust to device variability. The approach is expected to be employable across all types of quantum dot devices.
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Submitted 1 August, 2023; v1 submitted 1 February, 2022;
originally announced February 2022.
Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning
Authors:
B. Severin,
D. T. Lennon,
L. C. Camenzind,
F. Vigneau,
F. Fedele,
D. Jirovec,
A. Ballabio,
D. Chrastina,
G. Isella,
M. de Kruijf,
M. J. Carballido,
S. Svab,
A. V. Kuhlmann,
F. R. Braakman,
S. Geyer,
F. N. M. Froning,
H. Moon,
M. A. Osborne,
D. Sejdinovic,
G. Katsaros,
D. M. Zumbühl,
G. A. D. Briggs,
N. Ares
Abstract:
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scra…
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The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning.
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Submitted 27 July, 2021;
originally announced July 2021.
Data Mining on Crash Simulation Data
Authors:
A. Kuhlmann,
R. -M. Vetter,
Ch. Luebbing,
C. -A. Thole
Abstract:
The work presented in this paper is part of the cooperative research project AUTO-OPT carried out by twelve partners from the automotive industries. One major work package concerns the application of data mining methods in the area of automotive design. Suitable methods for data preparation and data analysis are developed. The objective of the work is the re-use of data stored in the crash-simul…
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The work presented in this paper is part of the cooperative research project AUTO-OPT carried out by twelve partners from the automotive industries. One major work package concerns the application of data mining methods in the area of automotive design. Suitable methods for data preparation and data analysis are developed. The objective of the work is the re-use of data stored in the crash-simulation department at BMW in order to gain deeper insight into the interrelations between the geometric variations of the car during its design and its performance in crash testing. In this paper a method for data analysis of finite element models and results from crash simulation is proposed and application to recent data from the industrial partner BMW is demonstrated. All necessary steps from data pre-processing to re-integration into the working environment of the engineer are covered.
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Submitted 2 May, 2005;
originally announced May 2005.
