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ClaPIM: Scalable Sequence CLAssification using Processing-In-Memory
Authors:
Marcel Khalifa,
Barak Hoffer,
Orian Leitersdorf,
Robert Hanhan,
Ben Perach,
Leonid Yavits,
Shahar Kvatinsky
Abstract:
DNA sequence classification is a fundamental task in computational biology with vast implications for applications such as disease prevention and drug design. Therefore, fast high-quality sequence classifiers are significantly important. This paper introduces ClaPIM, a scalable DNA sequence classification architecture based on the emerging concept of hybrid in-crossbar and near-crossbar memristive…
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DNA sequence classification is a fundamental task in computational biology with vast implications for applications such as disease prevention and drug design. Therefore, fast high-quality sequence classifiers are significantly important. This paper introduces ClaPIM, a scalable DNA sequence classification architecture based on the emerging concept of hybrid in-crossbar and near-crossbar memristive processing-in-memory (PIM). We enable efficient and high-quality classification by uniting the filter and search stages within a single algorithm. Specifically, we propose a custom filtering technique that drastically narrows the search space and a search approach that facilitates approximate string matching through a distance function. ClaPIM is the first PIM architecture for scalable approximate string matching that benefits from the high density of memristive crossbar arrays and the massive computational parallelism of PIM. Compared with Kraken2, a state-of-the-art software classifier, ClaPIM provides significantly higher classification quality (up to 20x improvement in F1 score) and also demonstrates a 1.8x throughput improvement. Compared with EDAM, a recently-proposed SRAM-based accelerator that is restricted to small datasets, we observe both a 30.4x improvement in normalized throughput per area and a 7% increase in classification precision.
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Submitted 5 November, 2023; v1 submitted 16 February, 2023;
originally announced February 2023.
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Stateful Logic using Phase Change Memory
Authors:
Barak Hoffer,
Nicolás Wainstein,
Christopher M. Neumann,
Eric Pop,
Eilam Yalon,
Shahar Kvatinsky
Abstract:
Stateful logic is a digital processing-in-memory technique that could address von Neumann memory bottleneck challenges while maintaining backward compatibility with standard von Neumann architectures. In stateful logic, memory cells are used to perform the logic operations without reading or moving any data outside the memory array. Stateful logic has been previously demonstrated using several res…
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Stateful logic is a digital processing-in-memory technique that could address von Neumann memory bottleneck challenges while maintaining backward compatibility with standard von Neumann architectures. In stateful logic, memory cells are used to perform the logic operations without reading or moving any data outside the memory array. Stateful logic has been previously demonstrated using several resistive memory types, mostly by resistive RAM (RRAM). Here we present a new method to design stateful logic using a different resistive memory - phase change memory (PCM). We propose and experimentally demonstrate four logic gate types (NOR, IMPLY, OR, NIMP) using commonly used PCM materials. Our stateful logic circuits are different than previously proposed circuits due to the different switching mechanism and functionality of PCM compared to RRAM. Since the proposed stateful logic form a functionally complete set, these gates enable sequential execution of any logic function within the memory, paving the way to PCM-based digital processing-in-memory systems.
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Submitted 29 December, 2022;
originally announced December 2022.
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Performing Stateful Logic Using Spin-Orbit Torque (SOT) MRAM
Authors:
Barak Hoffer,
Shahar Kvatinsky
Abstract:
Stateful logic is a promising processing-in-memory (PIM) paradigm to perform logic operations using emerging nonvolatile memory cells. While most stateful logic circuits to date focused on technologies such as resistive RAM, we propose two approaches to designing stateful logic using spin orbit torque (SOT) MRAM. The first approach utilizes the separation of read and write paths in SOT devices to…
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Stateful logic is a promising processing-in-memory (PIM) paradigm to perform logic operations using emerging nonvolatile memory cells. While most stateful logic circuits to date focused on technologies such as resistive RAM, we propose two approaches to designing stateful logic using spin orbit torque (SOT) MRAM. The first approach utilizes the separation of read and write paths in SOT devices to perform logic operations. In contrast to previous work, our method utilizes a standard memory structure, and each row can be used as input or output. The second approach uses voltage-gated SOT switching to allow stateful logic in denser memory arrays. We present array structures to support the two approaches and evaluate their functionality using SPICE simulations in the presence of process variation and device mismatch.
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Submitted 1 August, 2022;
originally announced August 2022.
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A memristive deep belief neural network based on silicon synapses
Authors:
Wei Wang,
Loai Danial,
Yang Li,
Eric Herbelin,
Evgeny Pikhay,
Yakov Roizin,
Barak Hoffer,
Zhongrui Wang,
Shahar Kvatinsky
Abstract:
Memristor-based neuromorphic computing could overcome the limitations of traditional von Neumann computing architectures -- in which data are shuffled between separate memory and processing units -- and improve the performance of deep neural networks. However, this will require accurate synaptic-like device performance, and memristors typically suffer from poor yield and a limited number of reliab…
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Memristor-based neuromorphic computing could overcome the limitations of traditional von Neumann computing architectures -- in which data are shuffled between separate memory and processing units -- and improve the performance of deep neural networks. However, this will require accurate synaptic-like device performance, and memristors typically suffer from poor yield and a limited number of reliable conductance states. Here we report floating gate memristive synaptic devices that are fabricated in a commercial complementary metal-oxide-semiconductor (CMOS) process. These silicon synapses offer analogue tunability, high endurance, long retention times, predictable cycling degradation, moderate device-to-device variations, and high yield. They also provide two orders of magnitude higher energy efficiency for multiply-accumulate operations than graphics processing units. We use two 12-by-8 arrays of the memristive devices for in-situ training of a 19-by-8 memristive restricted Boltzmann machine for pattern recognition via a gradient descent algorithm based on contrastive divergence. We then create a memristive deep belief neural network consisting of three memristive restricted Boltzmann machines. We test this on the modified National Institute of Standards and Technology (MNIST) dataset, demonstrating recognition accuracy up to 97.05%.
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Submitted 20 July, 2023; v1 submitted 16 March, 2022;
originally announced March 2022.
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Physical based compact model of Y-Flash memristor for neuromorphic computation
Authors:
Wei Wang,
Loai Danial,
Eric Herbelin,
Barak Hoffer,
Batel Oved,
Tzofnat Greenberg-Toledo,
Evgeny Pikhay,
Yakov Roizin,
Shahar Kvatinsky
Abstract:
Y-Flash memristors utilize the mature technology of single polysilicon floating gate non-volatile memories (NVM). It can be operated in a two-terminal configuration similar to the other emerging memristive devices, i.e., resistive random-access memory (RRAM), phase-change memory (PCM), etc. Fabricated in production complementary metal-oxide-semiconductor (CMOS) technology, Y-Flash memristors allow…
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Y-Flash memristors utilize the mature technology of single polysilicon floating gate non-volatile memories (NVM). It can be operated in a two-terminal configuration similar to the other emerging memristive devices, i.e., resistive random-access memory (RRAM), phase-change memory (PCM), etc. Fabricated in production complementary metal-oxide-semiconductor (CMOS) technology, Y-Flash memristors allow excellent repro-ducibility reflected in high neuromorphic products yields. Working in the subthreshold region, the device can be programmed to a large number of fine-tuned intermediate states in an analog fashion and allows low readout currents (1 nA ~ 5 $μ$ A). However, currently, there are no accurate models to describe the dynamic switching in this type of memristive device and account for multiple operational configurations. In this paper, we provide a physical-based compact model that describes Y-Flash memristor performance both in DC and AC regimes, and consistently describes the dynamic program and erase operations. The model is integrated into the commercial circuit design tools and is ready to be used in applications related to neuromorphic computation.
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Submitted 16 February, 2022;
originally announced February 2022.
