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P4Testgen: An Extensible Test Oracle For P4
Authors:
Fabian Ruffy,
Jed Liu,
Prathima Kotikalapudi,
Vojtěch Havel,
Hanneli Tavante,
Rob Sherwood,
Vladyslav Dubina,
Volodymyr Peschanenko,
Anirudh Sivaraman,
Nate Foster
Abstract:
We present P4Testgen, a test oracle for the P4$_{16}$ language. P4Testgen supports automatic test generation for any P4 target and is designed to be extensible to many P4 targets. It models the complete semantics of the target's packet-processing pipeline including the P4 language, architectures and externs, and target-specific extensions. To handle non-deterministic behaviors and complex externs…
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We present P4Testgen, a test oracle for the P4$_{16}$ language. P4Testgen supports automatic test generation for any P4 target and is designed to be extensible to many P4 targets. It models the complete semantics of the target's packet-processing pipeline including the P4 language, architectures and externs, and target-specific extensions. To handle non-deterministic behaviors and complex externs (e.g., checksums and hash functions), P4Testgen uses taint tracking and concolic execution. It also provides path selection strategies that reduce the number of tests required to achieve full coverage.
We have instantiated P4Testgen for the V1model, eBPF, PNA, and Tofino P4 architectures. Each extension required effort commensurate with the complexity of the target. We validated the tests generated by P4Testgen by running them across the entire P4C test suite as well as the programs supplied with the Tofino P4 Studio. Using the tool, we have also confirmed 25 bugs in mature, production toolchains for BMv2 and Tofino.
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Submitted 6 August, 2023; v1 submitted 28 November, 2022;
originally announced November 2022.
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A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices
Authors:
Shyam Narayanan,
Erika Covi,
Viktor Havel,
Charlotte Frenkel,
Suzanne Lancaster,
Quang Duong,
Stefan Slesazeck,
Thomas Mikolajick,
Melika Payvand,
Giacomo Indiveri
Abstract:
Novel non-volatile memory devices based on ferroelectric thin films represent a promising emerging technology that is ideally suited for neuromorphic applications. The physical switching mechanism in such films is the nucleation and growth of ferroelectric domains. Since this has a strong dependence on both pulse width and voltage amplitude, it is important to use precise pulsing schemes for a tho…
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Novel non-volatile memory devices based on ferroelectric thin films represent a promising emerging technology that is ideally suited for neuromorphic applications. The physical switching mechanism in such films is the nucleation and growth of ferroelectric domains. Since this has a strong dependence on both pulse width and voltage amplitude, it is important to use precise pulsing schemes for a thorough characterization of their behaviour. In this work, we present an on-chip 120 dB programmable range pulse generator, that can generate pulse widths ranging from 10ns to 10ms $\pm$2.5% which eliminates the RLC bottleneck in the device characterisation setup. We describe the pulse generator design and show how the pulse width can be tuned with high accuracy, using Digital to Analog converters. Finally, we present experimental results measured from the circuit, fabricated using a standard 180nm CMOS technology.
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Submitted 8 February, 2022;
originally announced February 2022.
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Ferroelectric Tunneling Junctions for Edge Computing
Authors:
Erika Covi,
Quang T. Duong,
Suzanne Lancaster,
Viktor Havel,
Jean Coignus,
Justine Barbot,
Ole Richter,
Philip Klein,
Elisabetta Chicca,
Laurent Grenouillet,
Athanasios Dimoulas,
Thomas Mikolajick,
Stefan Slesazeck
Abstract:
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.
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Submitted 5 July, 2021;
originally announced July 2021.
