Showing 1–2 of 2 results for author: Grogg, D

0-level Vacuum Packaging RT Process for MEMS Resonators

Authors: N. Abelé, D. Grogg, C. Hibert, F. Casset, P. Ancey, A. Ionescu

Abstract: A new Room Temperature (RT) 0-level vacuum package is demonstrated in this work, using amorphous silicon (aSi) as sacrificial layer and SiO2 as structural layer. The process is compatible with most of MEMS resonators and Resonant Suspended-Gate MOSFET [1] fabrication processes. This paper presents a study on the influence of releasing hole dimensions on the releasing time and hole clogging. It d… ▽ More A new Room Temperature (RT) 0-level vacuum package is demonstrated in this work, using amorphous silicon (aSi) as sacrificial layer and SiO2 as structural layer. The process is compatible with most of MEMS resonators and Resonant Suspended-Gate MOSFET [1] fabrication processes. This paper presents a study on the influence of releasing hole dimensions on the releasing time and hole clogging. It discusses mass production compatibility in terms of packaging stress during back-end plastic injection process. The packaging is done at room temperature making it fully compatible with IC-processed wafers and avoiding any subsequent degradation of the active devices. △ Less

Submitted 21 February, 2008; originally announced February 2008.

Comments: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing)

Journal ref: Dans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2007, Stresa, lago Maggiore : Italie (2007)

Fabrication of MEMS Resonators in Thin SOI

Authors: D. Grogg, Nicoleta Diana Badila-Ciressan, Adrian Mihai Ionescu

Abstract: A simple and fast process for micro-electromechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented in this paper. Thin SOI wafers are important for advanced CMOS technology and thus are evaluated as resonator substrates for future co-integration with CMOS circuitry on a single chip. As the transduction capacitance scales with the resonator thickness, it is imp… ▽ More A simple and fast process for micro-electromechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented in this paper. Thin SOI wafers are important for advanced CMOS technology and thus are evaluated as resonator substrates for future co-integration with CMOS circuitry on a single chip. As the transduction capacitance scales with the resonator thickness, it is important to fabricate deep sub-micron trenches in order to achieve a good capacitive coupling. Through the combination of conventional UV-lithography and focused ion beam (FIB) milling the process needs only two lithography steps, enabling therefore a way for fast prototy** of MEM-resonators. Different FIB parameters and etching parameters are compared in this paper and their effect on the process are reported. △ Less

Submitted 21 February, 2008; originally announced February 2008.

Comments: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing)

Journal ref: Dans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2007, Stresa, lago Maggiore : Italie (2007)