TDPP: Two-Dimensional Permutation-Based Protection of Memristive Deep Neural Networks
Authors:
Minhui Zou,
Zhenhua Zhu,
Tzofnat Greenberg-Toledo,
Orian Leitersdorf,
Jiang Li,
Junlong Zhou,
Yu Wang,
Nan Du,
Shahar Kvatinsky
Abstract:
The execution of deep neural network (DNN) algorithms suffers from significant bottlenecks due to the separation of the processing and memory units in traditional computer systems. Emerging memristive computing systems introduce an in situ approach that overcomes this bottleneck. The non-volatility of memristive devices, however, may expose the DNN weights stored in memristive crossbars to potenti…
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The execution of deep neural network (DNN) algorithms suffers from significant bottlenecks due to the separation of the processing and memory units in traditional computer systems. Emerging memristive computing systems introduce an in situ approach that overcomes this bottleneck. The non-volatility of memristive devices, however, may expose the DNN weights stored in memristive crossbars to potential theft attacks. Therefore, this paper proposes a two-dimensional permutation-based protection (TDPP) method that thwarts such attacks. We first introduce the underlying concept that motivates the TDPP method: permuting both the rows and columns of the DNN weight matrices. This contrasts with previous methods, which focused solely on permuting a single dimension of the weight matrices, either the rows or columns. While it's possible for an adversary to access the matrix values, the original arrangement of rows and columns in the matrices remains concealed. As a result, the extracted DNN model from the accessed matrix values would fail to operate correctly. We consider two different memristive computing systems (designed for layer-by-layer and layer-parallel processing, respectively) and demonstrate the design of the TDPP method that could be embedded into the two systems. Finally, we present a security analysis. Our experiments demonstrate that TDPP can achieve comparable effectiveness to prior approaches, with a high level of security when appropriately parameterized. In addition, TDPP is more scalable than previous methods and results in reduced area and power overheads. The area and power are reduced by, respectively, 1218$\times$ and 2815$\times$ for the layer-by-layer system and by 178$\times$ and 203$\times$ for the layer-parallel system compared to prior works.
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Submitted 10 October, 2023;
originally announced October 2023.
Physical based compact model of Y-Flash memristor for neuromorphic computation
Authors:
Wei Wang,
Loai Danial,
Eric Herbelin,
Barak Hoffer,
Batel Oved,
Tzofnat Greenberg-Toledo,
Evgeny Pikhay,
Yakov Roizin,
Shahar Kvatinsky
Abstract:
Y-Flash memristors utilize the mature technology of single polysilicon floating gate non-volatile memories (NVM). It can be operated in a two-terminal configuration similar to the other emerging memristive devices, i.e., resistive random-access memory (RRAM), phase-change memory (PCM), etc. Fabricated in production complementary metal-oxide-semiconductor (CMOS) technology, Y-Flash memristors allow…
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Y-Flash memristors utilize the mature technology of single polysilicon floating gate non-volatile memories (NVM). It can be operated in a two-terminal configuration similar to the other emerging memristive devices, i.e., resistive random-access memory (RRAM), phase-change memory (PCM), etc. Fabricated in production complementary metal-oxide-semiconductor (CMOS) technology, Y-Flash memristors allow excellent repro-ducibility reflected in high neuromorphic products yields. Working in the subthreshold region, the device can be programmed to a large number of fine-tuned intermediate states in an analog fashion and allows low readout currents (1 nA ~ 5 $μ$ A). However, currently, there are no accurate models to describe the dynamic switching in this type of memristive device and account for multiple operational configurations. In this paper, we provide a physical-based compact model that describes Y-Flash memristor performance both in DC and AC regimes, and consistently describes the dynamic program and erase operations. The model is integrated into the commercial circuit design tools and is ready to be used in applications related to neuromorphic computation.
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Submitted 16 February, 2022;
originally announced February 2022.
