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Automated dysgraphia detection by deep learning with SensoGrip
Authors:
Mugdim Bublin,
Franz Werner,
Andrea Kerschbaumer,
Gernot Korak,
Sebastian Geyer,
Lena Rettinger,
Erna Schoenthaler,
Matthias Schmid-Kietreiber
Abstract:
Dysgraphia, a handwriting learning disability, has a serious negative impact on children's academic results, daily life and overall wellbeing. Early detection of dysgraphia allows for an early start of a targeted intervention. Several studies have investigated dysgraphia detection by machine learning algorithms using a digital tablet. However, these studies deployed classical machine learning algo…
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Dysgraphia, a handwriting learning disability, has a serious negative impact on children's academic results, daily life and overall wellbeing. Early detection of dysgraphia allows for an early start of a targeted intervention. Several studies have investigated dysgraphia detection by machine learning algorithms using a digital tablet. However, these studies deployed classical machine learning algorithms with manual feature extraction and selection as well as binary classification: either dysgraphia or no dysgraphia. In this work, we investigated fine grading of handwriting capabilities by predicting SEMS score (between 0 and 12) with deep learning. Our approach provide accuracy more than 99% and root mean square error lower than one, with automatic instead of manual feature extraction and selection. Furthermore, we used smart pen called SensoGrip, a pen equipped with sensors to capture handwriting dynamics, instead of a tablet, enabling writing evaluation in more realistic scenarios.
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Submitted 3 January, 2023; v1 submitted 14 October, 2022;
originally announced October 2022.
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Identifying Pauli spin blockade using deep learning
Authors:
Jonas Schuff,
Dominic T. Lennon,
Simon Geyer,
David L. Craig,
Federico Fedele,
Florian Vigneau,
Leon C. Camenzind,
Andreas V. Kuhlmann,
G. Andrew D. Briggs,
Dominik M. Zumbühl,
Dino Sejdinovic,
Natalia Ares
Abstract:
Pauli spin blockade (PSB) can be employed as a great resource for spin qubit initialisation and readout even at elevated temperatures but it can be difficult to identify. We present a machine learning algorithm capable of automatically identifying PSB using charge transport measurements. The scarcity of PSB data is circumvented by training the algorithm with simulated data and by using cross-devic…
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Pauli spin blockade (PSB) can be employed as a great resource for spin qubit initialisation and readout even at elevated temperatures but it can be difficult to identify. We present a machine learning algorithm capable of automatically identifying PSB using charge transport measurements. The scarcity of PSB data is circumvented by training the algorithm with simulated data and by using cross-device validation. We demonstrate our approach on a silicon field-effect transistor device and report an accuracy of 96% on different test devices, giving evidence that the approach is robust to device variability. The approach is expected to be employable across all types of quantum dot devices.
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Submitted 1 August, 2023; v1 submitted 1 February, 2022;
originally announced February 2022.
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Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning
Authors:
B. Severin,
D. T. Lennon,
L. C. Camenzind,
F. Vigneau,
F. Fedele,
D. Jirovec,
A. Ballabio,
D. Chrastina,
G. Isella,
M. de Kruijf,
M. J. Carballido,
S. Svab,
A. V. Kuhlmann,
F. R. Braakman,
S. Geyer,
F. N. M. Froning,
H. Moon,
M. A. Osborne,
D. Sejdinovic,
G. Katsaros,
D. M. Zumbühl,
G. A. D. Briggs,
N. Ares
Abstract:
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scra…
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The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning.
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Submitted 27 July, 2021;
originally announced July 2021.
