-
State Space Analysis of Memristor Based Series and Parallel RLCM Circuits
Authors:
T. D. Dongale,
P. K. Gaikwad,
R. K. Kamat
Abstract:
The present paper investigates state space analysis of memristor based series and parallel RLCM circuits. The stability analysis is carried out with the help of eigenvalues formulation method, pole-zero plot and transient response of system. The state space analysis is successfully applied and eigenvalues of the two circuits are calculated. It is found that the, system follows negative real part o…
▽ More
The present paper investigates state space analysis of memristor based series and parallel RLCM circuits. The stability analysis is carried out with the help of eigenvalues formulation method, pole-zero plot and transient response of system. The state space analysis is successfully applied and eigenvalues of the two circuits are calculated. It is found that the, system follows negative real part of eigenvalues. The result clearly shows that addition of memristor in circuits will not alter the stability of system. It is found that systems poles located at left hand side of the S plane, which indicates stable performance of system. It clearly evident that eigenvalues has negative real part hence two systems are internally stable.
△ Less
Submitted 13 February, 2016;
originally announced February 2016.
-
Time and Frequency Domain Investigation of Selected Memristor based Analog Circuits
Authors:
G. S. Patil,
S. R. Ghatage,
P. K. Gaikwad,
R. K. Kamat,
T. D. Dongale
Abstract:
In this paper, we investigate few memristor-based analog circuits namely the phase shift oscillator, integrator, and differentiator which have been explored numerously using the traditional lumped components. We use LTspice-IV platform for simulation of the above-said circuits. The investigation resorts to the nonlinear dopant drift model of memristor and the window function portrayed in the liter…
▽ More
In this paper, we investigate few memristor-based analog circuits namely the phase shift oscillator, integrator, and differentiator which have been explored numerously using the traditional lumped components. We use LTspice-IV platform for simulation of the above-said circuits. The investigation resorts to the nonlinear dopant drift model of memristor and the window function portrayed in the literature for nonlinearity realization. The results of our investigations depict good agreement with the conventional lumped component based phase shift oscillator, integrator, and differentiator circuits. The results are evident to showcase the potential of the memristor as a promising candidate for the next generation analog circuits.
△ Less
Submitted 30 March, 2017; v1 submitted 6 February, 2016;
originally announced February 2016.
-
Investigating Reliability Aspects of Memristor based RRAM with Reference to Write Voltage and Frequency
Authors:
T. D. Dongale,
K. V. Khot,
S. V. Mohite,
N. K. Desai,
S. S. Shinde,
A. V. Moholkar,
K. Y. Rajpure,
P. N. Bhosale,
P. S. Patil,
P. K. Gaikwad,
R. K. Kamat
Abstract:
In this paper, we report the effect of write voltage and frequency on memristor based Resistive Random Access Memory (RRAM). The above said parameters have been investigated on the linear drift model of memristor. With a variation of write voltage from 0.2V to 1.2V and a subsequent frequency modulation from 1, 2, 4, 10, 100 and 200 Hz the corresponding effects on memory window, Low Resistance Stat…
▽ More
In this paper, we report the effect of write voltage and frequency on memristor based Resistive Random Access Memory (RRAM). The above said parameters have been investigated on the linear drift model of memristor. With a variation of write voltage from 0.2V to 1.2V and a subsequent frequency modulation from 1, 2, 4, 10, 100 and 200 Hz the corresponding effects on memory window, Low Resistance State (LRS) and High Resistance State (HRS) have been reported. Thus the lifetime (τ) reliability analysis of memristor based RRAM is carried out using above results. It is found that, the HRS is independent of write voltage, whereas LRS shows dependency on write voltage and frequency. The simulation results showcase that the memristor possess higher memory window and lifetime (τ) in the higher voltage with lower frequency region, which has been attributed to the fewer data losses in the memory architecture.
△ Less
Submitted 5 February, 2016;
originally announced February 2016.
-
TiO2 based Nanostructured Memristor for RRAM and Neuromorphic Applications: A Simulation Approach
Authors:
T. D. Dongale,
P. J. Patil,
N. K. Desai,
P. P. Chougule,
S. M. Kumbhar,
P. P. Waifalkar,
P. B. Patil,
R. S. Vhatkar,
M. V. Takale,
P. K. Gaikwad,
R. K. Kamat
Abstract:
We report simulation of nanostructured memristor device using piecewise linear and nonlinear window functions for RRAM and neuromorphic applications. The linear drift model of memristor has been exploited for the simulation purpose with the linear and non-linear window function as the mathematical and scripting basis. The results evidences that the piecewise linear window function can aptly simula…
▽ More
We report simulation of nanostructured memristor device using piecewise linear and nonlinear window functions for RRAM and neuromorphic applications. The linear drift model of memristor has been exploited for the simulation purpose with the linear and non-linear window function as the mathematical and scripting basis. The results evidences that the piecewise linear window function can aptly simulate the memristor characteristics pertaining to RRAM application. However, the nonlinear window function could exhibit the nonlinear phenomenon in simulation only at the lower magnitude of control parameter. This has motivated us to propose a new nonlinear window function for emulating the simulation model of the memristor. Interestingly, the proposed window function is scalable up to f(x)=1 and exhibits the nonlinear behavior at higher magnitude of control parameter. Moreover, the simulation results of proposed nonlinear window function are encouraging and reveals the smooth nonlinear change from LRS to HRS and vice versa and therefore useful for the neuromorphic applications.
△ Less
Submitted 25 January, 2016;
originally announced January 2016.