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Showing 1–2 of 2 results for author: Esmanhotto, E

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  1. arXiv:2203.01680  [pdf

    cs.ET

    Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations

    Authors: E. Esmanhotto, T. Hirtzlin, N. Castellani, S. Martin, B. Giraud, F. Andrieu, J. F. Nodin, D. Querlioz, J-M. Portal, E. Vianello

    Abstract: Crossbar arrays of resistive memories (RRAM) hold the promise of enabling In-Memory Computing (IMC), but essential challenges due to the impact of device imperfection and device endurance have yet to be overcome. In this work, we demonstrate experimentally an RRAM-based IMC logic concept with strong resilience to RRAM variability, even after one million endurance cycles. Our work relies on a gener… ▽ More

    Submitted 3 March, 2022; originally announced March 2022.

    Comments: Preprint for IRPS2022

  2. arXiv:2202.05094  [pdf, other

    cs.NE eess.SP

    Hardware calibrated learning to compensate heterogeneity in analog RRAM-based Spiking Neural Networks

    Authors: Filippo Moro, E. Esmanhotto, T. Hirtzlin, N. Castellani, A. Trabelsi, T. Dalgaty, G. Molas, F. Andrieu, S. Brivio, S. Spiga, G. Indiveri, M. Payvand, E. Vianello

    Abstract: Spiking Neural Networks (SNNs) can unleash the full power of analog Resistive Random Access Memories (RRAMs) based circuits for low power signal processing. Their inherent computational sparsity naturally results in energy efficiency benefits. The main challenge implementing robust SNNs is the intrinsic variability (heterogeneity) of both analog CMOS circuits and RRAM technology. In this work, we… ▽ More

    Submitted 10 February, 2022; originally announced February 2022.

    Comments: Preprint for ISCAS2022