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Processing In-memory realization using Quantum Dot Cellular Automata
Authors:
P. P. Chougule,
B. Sen,
T. D. Dongale
Abstract:
The present manuscript deals with the realization of Processing In-memory (PIM) computing architecture using Quantum Dot Cellular Automata (QCA) and Akers array. The PIM computing architecture becomes popular due to its effective framework for storage and computation of data in a single unit. Here, we illustrate two input NAND and NOR gate with the help of QCA based Akers Array as a case study. Th…
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The present manuscript deals with the realization of Processing In-memory (PIM) computing architecture using Quantum Dot Cellular Automata (QCA) and Akers array. The PIM computing architecture becomes popular due to its effective framework for storage and computation of data in a single unit. Here, we illustrate two input NAND and NOR gate with the help of QCA based Akers Array as a case study. The QCA flip-flop is used as a primitive cell to design PIM architecture. The results suggested that both the gate have minimum power dissipation. The polarization results of proposed architecture suggested that the signals are in good control. The foot print of the primitive cell equals to 0.04 micron^2, which is smaller than conventional CMOS primitive cell. The combination of QCA and Akers array provides many additional benefits over the conventional architecture like reduction in the power consumption and feature size, furthermore, it also improves the computational speed.
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Submitted 13 July, 2016;
originally announced July 2016.
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State Space Analysis of Memristor Based Series and Parallel RLCM Circuits
Authors:
T. D. Dongale,
P. K. Gaikwad,
R. K. Kamat
Abstract:
The present paper investigates state space analysis of memristor based series and parallel RLCM circuits. The stability analysis is carried out with the help of eigenvalues formulation method, pole-zero plot and transient response of system. The state space analysis is successfully applied and eigenvalues of the two circuits are calculated. It is found that the, system follows negative real part o…
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The present paper investigates state space analysis of memristor based series and parallel RLCM circuits. The stability analysis is carried out with the help of eigenvalues formulation method, pole-zero plot and transient response of system. The state space analysis is successfully applied and eigenvalues of the two circuits are calculated. It is found that the, system follows negative real part of eigenvalues. The result clearly shows that addition of memristor in circuits will not alter the stability of system. It is found that systems poles located at left hand side of the S plane, which indicates stable performance of system. It clearly evident that eigenvalues has negative real part hence two systems are internally stable.
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Submitted 13 February, 2016;
originally announced February 2016.
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Time and Frequency Domain Investigation of Selected Memristor based Analog Circuits
Authors:
G. S. Patil,
S. R. Ghatage,
P. K. Gaikwad,
R. K. Kamat,
T. D. Dongale
Abstract:
In this paper, we investigate few memristor-based analog circuits namely the phase shift oscillator, integrator, and differentiator which have been explored numerously using the traditional lumped components. We use LTspice-IV platform for simulation of the above-said circuits. The investigation resorts to the nonlinear dopant drift model of memristor and the window function portrayed in the liter…
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In this paper, we investigate few memristor-based analog circuits namely the phase shift oscillator, integrator, and differentiator which have been explored numerously using the traditional lumped components. We use LTspice-IV platform for simulation of the above-said circuits. The investigation resorts to the nonlinear dopant drift model of memristor and the window function portrayed in the literature for nonlinearity realization. The results of our investigations depict good agreement with the conventional lumped component based phase shift oscillator, integrator, and differentiator circuits. The results are evident to showcase the potential of the memristor as a promising candidate for the next generation analog circuits.
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Submitted 30 March, 2017; v1 submitted 6 February, 2016;
originally announced February 2016.
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A Processing In-Memory Realization Using QCA: Proposal and Implementation
Authors:
P. P. Chougule,
B. Sen,
R. Mukherjee,
V. C. Karade,
P. S. Patil,
T. D. Dongale,
R. K. Kamat
Abstract:
Processing in Memory (PIM) is a computing paradigm that promises enormous gain in processing speed by eradicating latencies in the typical von Neumann architecture. It has gained popularity owing to its throughput by embedding storage and computation of data in a single unit. We portray implementation of Akers array architecture endowed with PIM computation using Quantum-dot Cellular Automata (QCA…
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Processing in Memory (PIM) is a computing paradigm that promises enormous gain in processing speed by eradicating latencies in the typical von Neumann architecture. It has gained popularity owing to its throughput by embedding storage and computation of data in a single unit. We portray implementation of Akers array architecture endowed with PIM computation using Quantum-dot Cellular Automata (QCA). We present the proof of concept of PIM with its realization in the QCA designer paradigm. We illustrate implementation of Ex-OR gate with the help of QCA based Akers Array and put forth many interesting potential possibilities.
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Submitted 6 February, 2016;
originally announced February 2016.
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Investigating Reliability Aspects of Memristor based RRAM with Reference to Write Voltage and Frequency
Authors:
T. D. Dongale,
K. V. Khot,
S. V. Mohite,
N. K. Desai,
S. S. Shinde,
A. V. Moholkar,
K. Y. Rajpure,
P. N. Bhosale,
P. S. Patil,
P. K. Gaikwad,
R. K. Kamat
Abstract:
In this paper, we report the effect of write voltage and frequency on memristor based Resistive Random Access Memory (RRAM). The above said parameters have been investigated on the linear drift model of memristor. With a variation of write voltage from 0.2V to 1.2V and a subsequent frequency modulation from 1, 2, 4, 10, 100 and 200 Hz the corresponding effects on memory window, Low Resistance Stat…
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In this paper, we report the effect of write voltage and frequency on memristor based Resistive Random Access Memory (RRAM). The above said parameters have been investigated on the linear drift model of memristor. With a variation of write voltage from 0.2V to 1.2V and a subsequent frequency modulation from 1, 2, 4, 10, 100 and 200 Hz the corresponding effects on memory window, Low Resistance State (LRS) and High Resistance State (HRS) have been reported. Thus the lifetime (τ) reliability analysis of memristor based RRAM is carried out using above results. It is found that, the HRS is independent of write voltage, whereas LRS shows dependency on write voltage and frequency. The simulation results showcase that the memristor possess higher memory window and lifetime (τ) in the higher voltage with lower frequency region, which has been attributed to the fewer data losses in the memory architecture.
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Submitted 5 February, 2016;
originally announced February 2016.
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TiO2 based Nanostructured Memristor for RRAM and Neuromorphic Applications: A Simulation Approach
Authors:
T. D. Dongale,
P. J. Patil,
N. K. Desai,
P. P. Chougule,
S. M. Kumbhar,
P. P. Waifalkar,
P. B. Patil,
R. S. Vhatkar,
M. V. Takale,
P. K. Gaikwad,
R. K. Kamat
Abstract:
We report simulation of nanostructured memristor device using piecewise linear and nonlinear window functions for RRAM and neuromorphic applications. The linear drift model of memristor has been exploited for the simulation purpose with the linear and non-linear window function as the mathematical and scripting basis. The results evidences that the piecewise linear window function can aptly simula…
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We report simulation of nanostructured memristor device using piecewise linear and nonlinear window functions for RRAM and neuromorphic applications. The linear drift model of memristor has been exploited for the simulation purpose with the linear and non-linear window function as the mathematical and scripting basis. The results evidences that the piecewise linear window function can aptly simulate the memristor characteristics pertaining to RRAM application. However, the nonlinear window function could exhibit the nonlinear phenomenon in simulation only at the lower magnitude of control parameter. This has motivated us to propose a new nonlinear window function for emulating the simulation model of the memristor. Interestingly, the proposed window function is scalable up to f(x)=1 and exhibits the nonlinear behavior at higher magnitude of control parameter. Moreover, the simulation results of proposed nonlinear window function are encouraging and reveals the smooth nonlinear change from LRS to HRS and vice versa and therefore useful for the neuromorphic applications.
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Submitted 25 January, 2016;
originally announced January 2016.
