Intrinsic Voltage Offsets in Memcapacitive Bio-Membranes Enable High-Performance Physical Reservoir Computing
Authors:
Ahmed S. Mohamed,
Anurag Dhungel,
Md Sakib Hasan,
Joseph S. Najem
Abstract:
Reservoir computing is a brain-inspired machine learning framework for processing temporal data by map** inputs into high-dimensional spaces. Physical reservoir computers (PRCs) leverage native fading memory and nonlinearity in physical substrates, including atomic switches, photonics, volatile memristors, and, recently, memcapacitors, to achieve efficient high-dimensional map**. Traditional P…
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Reservoir computing is a brain-inspired machine learning framework for processing temporal data by map** inputs into high-dimensional spaces. Physical reservoir computers (PRCs) leverage native fading memory and nonlinearity in physical substrates, including atomic switches, photonics, volatile memristors, and, recently, memcapacitors, to achieve efficient high-dimensional map**. Traditional PRCs often consist of homogeneous device arrays, which rely on input encoding methods and large stochastic device-to-device variations for increased nonlinearity and high-dimensional map**. These approaches incur high pre-processing costs and restrict real-time deployment. Here, we introduce a novel heterogeneous memcapacitor-based PRC that exploits internal voltage offsets to enable both monotonic and non-monotonic input-state correlations crucial for efficient high-dimensional transformations. We demonstrate our approach's efficacy by predicting a second-order nonlinear dynamical system with an extremely low prediction error (0.00018). Additionally, we predict a chaotic Hénon map, achieving a low normalized root mean square error (0.080). Unlike previous PRCs, such errors are achieved without input encoding methods, underscoring the power of distinct input-state correlations. Most importantly, we generalize our approach to other neuromorphic devices that lack inherent voltage offsets using externally applied offsets to realize various input-state correlations. Our approach and unprecedented performance are a major milestone towards high-performance full in-materia PRCs.
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Submitted 27 April, 2024;
originally announced May 2024.
Brain-Inspired Reservoir Computing Using Memristors with Tunable Dynamics and Short-Term Plasticity
Authors:
Nicholas X. Armendarez,
Ahmed S. Mohamed,
Anurag Dhungel,
Md Razuan Hossain,
Md Sakib Hasan,
Joseph S. Najem
Abstract:
Recent advancements in reservoir computing research have created a demand for analog devices with dynamics that can facilitate the physical implementation of reservoirs, promising faster information processing while consuming less energy and occupying a smaller area footprint. Studies have demonstrated that dynamic memristors, with nonlinear and short-term memory dynamics, are excellent candidates…
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Recent advancements in reservoir computing research have created a demand for analog devices with dynamics that can facilitate the physical implementation of reservoirs, promising faster information processing while consuming less energy and occupying a smaller area footprint. Studies have demonstrated that dynamic memristors, with nonlinear and short-term memory dynamics, are excellent candidates as information-processing devices or reservoirs for temporal classification and prediction tasks. Previous implementations relied on nominally identical memristors that applied the same nonlinear transformation to the input data, which is not enough to achieve a rich state space. To address this limitation, researchers either diversified the data encoding across multiple memristors or harnessed the stochastic device-to-device variability among the memristors. However, this approach requires additional pre-processing steps and leads to synchronization issues. Instead, it is preferable to encode the data once and pass it through a reservoir layer consisting of memristors with distinct dynamics. Here, we demonstrate that ion-channel-based memristors with voltage-dependent dynamics can be controllably and predictively tuned through voltage or adjustment of the ion channel concentration to exhibit diverse dynamic properties. We show, through experiments and simulations, that reservoir layers constructed with a small number of distinct memristors exhibit significantly higher predictive and classification accuracies with a single data encoding. We found that for a second-order nonlinear dynamical system prediction task, the varied memristor reservoir experimentally achieved a normalized mean square error of 0.0015 using only five distinct memristors. Moreover, in a neural activity classification task, a reservoir of just three distinct memristors experimentally attained an accuracy of 96.5%.
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Submitted 24 October, 2023;
originally announced October 2023.
