Showing 1–2 of 2 results for author: Debashis, P

Gaussian Random Number Generator with Reconfigurable Mean and Variance using Stochastic Magnetic Tunnel Junctions

Authors: Punyashloka Debashis, Hai Li, Dmitri Nikonov, Ian Young

Abstract: Generating high-quality random numbers with a Gaussian probability distribution function is an important and resource consuming computational task for many applications in the fields of machine learning and Monte Carlo algorithms. Recently, CMOS-based digital hardware architectures have been explored as specialized Gaussian random number generators (GRNGs). These CMOS-based GRNGs have a large area… ▽ More Generating high-quality random numbers with a Gaussian probability distribution function is an important and resource consuming computational task for many applications in the fields of machine learning and Monte Carlo algorithms. Recently, CMOS-based digital hardware architectures have been explored as specialized Gaussian random number generators (GRNGs). These CMOS-based GRNGs have a large area and require entropy sources at their input which increase the computing cost. Here, we propose a GRNG that works on the principle of the Boltzmann law in a physical system made from an interconnected network of thermally unstable magnetic tunnel junctions. The proposed hardware can produce multi-bit Gaussian random numbers at a gigahertz speed and can be configured to generate distributions with a desired mean and variance. An analytical derivation of the required interconnection and bias strengths is provided followed by numerical simulations to demonstrate the functionalities of the GRNG. △ Less

Submitted 8 December, 2021; originally announced December 2021.

Comments: 14 pages, 5 figures

Electrically-Tunable Stochasticity for Spin-based Neuromorphic Circuits: Self-Adjusting to Variation

Authors: Hossein Pourmeidani, Punyashloka Debashis, Zhihong Chen, Ronald F. DeMara, Ramtin Zand

Abstract: Energy-efficient methods are addressed for leveraging low energy barrier nanomagnetic devices within neuromorphic architectures. Using a Magnetoresistive Random Access Memory (MRAM) probabilistic device (p-bit) as the basis of neuronal structures in Deep Belief Networks (DBNs), the impact of reducing the Magnetic Tunnel Junction's (MTJ's) energy barrier is assessed and optimized for the resulting… ▽ More Energy-efficient methods are addressed for leveraging low energy barrier nanomagnetic devices within neuromorphic architectures. Using a Magnetoresistive Random Access Memory (MRAM) probabilistic device (p-bit) as the basis of neuronal structures in Deep Belief Networks (DBNs), the impact of reducing the Magnetic Tunnel Junction's (MTJ's) energy barrier is assessed and optimized for the resulting stochasticity present in the learning system. This can mitigate the process variation sensitivity of stochastic DBNs which encounter a sharp drop-off when energy barriers exceed near-zero kT. As evaluated for the MNIST dataset for energy barriers at near-zero kT to 2.0 kT in increments of 0.5 kT, it is shown that the stability factor changes by 5 orders of magnitude. The self-compensating circuit developed herein provides a compact, and low complexity approach to mitigating process variation impacts towards practical implementation and fabrication. △ Less

Submitted 2 May, 2020; originally announced May 2020.