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Tunable Synaptic Working Memory with Volatile Memristive Devices
Authors:
Saverio Ricci,
David Kappel,
Christian Tetzlaff,
Daniele Ielmini,
Erika Covi
Abstract:
Different real-world cognitive tasks evolve on different relevant timescales. Processing these tasks requires memory mechanisms able to match their specific time constants. In particular, the working memory utilizes mechanisms that span orders of magnitudes of timescales, from milliseconds to seconds or even minutes. This plentitude of timescales is an essential ingredient of working memory tasks…
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Different real-world cognitive tasks evolve on different relevant timescales. Processing these tasks requires memory mechanisms able to match their specific time constants. In particular, the working memory utilizes mechanisms that span orders of magnitudes of timescales, from milliseconds to seconds or even minutes. This plentitude of timescales is an essential ingredient of working memory tasks like visual or language processing. This degree of flexibility is challenging in analog computing hardware because it requires the integration of several reconfigurable capacitors of different size. Emerging volatile memristive devices present a compact and appealing solution to reproduce reconfigurable temporal dynamics in a neuromorphic network.
We present a demonstration of working memory using a silver-based memristive device whose key parameters, retention time and switching probability, can be electrically tuned and adapted to the task at hand. First, we demonstrate the principles of working memory in a small scale hardware to execute an associative memory task. Then, we use the experimental data in two larger scale simulations, the first featuring working memory in a biological environment, the second demonstrating associative symbolic working memory.
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Submitted 26 June, 2023;
originally announced June 2023.
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Decision Making by a Neuromorphic Network of Volatile Resistive Switching Memories
Authors:
Saverio Ricci,
David Kappel,
Christian Tetzlaff,
Daniele Ielmini,
Erika Covi
Abstract:
The necessity of having an electronic device working in relevant biological time scales with a small footprint boosted the research of a new class of emerging memories. Ag-based volatile resistive switching memories (RRAMs) feature a spontaneous change of device conductance with a similarity to biological mechanisms. They rely on the formation and self-disruption of a metallic conductive filament…
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The necessity of having an electronic device working in relevant biological time scales with a small footprint boosted the research of a new class of emerging memories. Ag-based volatile resistive switching memories (RRAMs) feature a spontaneous change of device conductance with a similarity to biological mechanisms. They rely on the formation and self-disruption of a metallic conductive filament through an oxide layer, with a retention time ranging from a few milliseconds to several seconds, greatly tunable according to the maximum current which is flowing through the device. Here we prove a neuromorphic system based on volatile-RRAMs able to mimic the principles of biological decision-making behavior and tackle the Two-Alternative Forced Choice problem, where a subject is asked to make a choice between two possible alternatives not relying on a precise knowledge of the problem, rather on noisy perceptions.
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Submitted 6 November, 2022;
originally announced November 2022.
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A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron
Authors:
Paolo Gibertini,
Luca Fehlings,
Suzanne Lancaster,
Quang Duong,
Thomas Mikolajick,
Catherine Dubourdieu,
Stefan Slesazeck,
Erika Covi,
Veeresh Deshpande
Abstract:
Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes. Ferroelectric Tunnel Junctions (FTJs) are ultra low-power memory devices and are well-suited to be integrated in these systems. Here, we present a hybrid FTJ-CMOS Integrate-and-Fire neuron which constitutes a fundamental building block for new…
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Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes. Ferroelectric Tunnel Junctions (FTJs) are ultra low-power memory devices and are well-suited to be integrated in these systems. Here, we present a hybrid FTJ-CMOS Integrate-and-Fire neuron which constitutes a fundamental building block for new-generation neuromorphic networks for edge computing. We demonstrate electrically tunable neural dynamics achievable by tuning the switching of the FTJ device.
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Submitted 4 November, 2022;
originally announced November 2022.
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Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing
Authors:
Suzanne Lancaster,
Quang T. Duong,
Erika Covi,
Thomas Mikolajick,
Stefan Slesazeck
Abstract:
HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching capability together with the low on-current density suggests the application in circuits for massive parallel computation. In this work, we discuss one example circuit of a differential synaptic cell featuring multiple pa…
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HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching capability together with the low on-current density suggests the application in circuits for massive parallel computation. In this work, we discuss one example circuit of a differential synaptic cell featuring multiple parallel connected FTJ devices. Moreover, from the circuit requirements we deduce that the absolute difference in currents (Ion - Ioff) is a more critical figure of merit than the tunneling electroresistance ratio (TER). Based on this, we discuss the potential of FTJ device optimization by means of electrode work function engineering in bilayer HZO/Al2O3 FTJs.
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Submitted 1 November, 2022; v1 submitted 21 September, 2022;
originally announced September 2022.
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A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices
Authors:
Shyam Narayanan,
Erika Covi,
Viktor Havel,
Charlotte Frenkel,
Suzanne Lancaster,
Quang Duong,
Stefan Slesazeck,
Thomas Mikolajick,
Melika Payvand,
Giacomo Indiveri
Abstract:
Novel non-volatile memory devices based on ferroelectric thin films represent a promising emerging technology that is ideally suited for neuromorphic applications. The physical switching mechanism in such films is the nucleation and growth of ferroelectric domains. Since this has a strong dependence on both pulse width and voltage amplitude, it is important to use precise pulsing schemes for a tho…
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Novel non-volatile memory devices based on ferroelectric thin films represent a promising emerging technology that is ideally suited for neuromorphic applications. The physical switching mechanism in such films is the nucleation and growth of ferroelectric domains. Since this has a strong dependence on both pulse width and voltage amplitude, it is important to use precise pulsing schemes for a thorough characterization of their behaviour. In this work, we present an on-chip 120 dB programmable range pulse generator, that can generate pulse widths ranging from 10ns to 10ms $\pm$2.5% which eliminates the RLC bottleneck in the device characterisation setup. We describe the pulse generator design and show how the pulse width can be tuned with high accuracy, using Digital to Analog converters. Finally, we present experimental results measured from the circuit, fabricated using a standard 180nm CMOS technology.
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Submitted 8 February, 2022;
originally announced February 2022.
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Ferroelectric Tunneling Junctions for Edge Computing
Authors:
Erika Covi,
Quang T. Duong,
Suzanne Lancaster,
Viktor Havel,
Jean Coignus,
Justine Barbot,
Ole Richter,
Philip Klein,
Elisabetta Chicca,
Laurent Grenouillet,
Athanasios Dimoulas,
Thomas Mikolajick,
Stefan Slesazeck
Abstract:
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.
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Submitted 5 July, 2021;
originally announced July 2021.
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Adaptive Extreme Edge Computing for Wearable Devices
Authors:
Erika Covi,
Elisa Donati,
Hadi Heidari,
David Kappel,
Xiangpeng Liang,
Melika Payvand,
Wei Wang
Abstract:
Wearable devices are a fast-growing technology with impact on personal healthcare for both society and economy. Due to the widespread of sensors in pervasive and distributed networks, power consumption, processing speed, and system adaptation are vital in future smart wearable devices. The visioning and forecasting of how to bring computation to the edge in smart sensors have already begun, with a…
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Wearable devices are a fast-growing technology with impact on personal healthcare for both society and economy. Due to the widespread of sensors in pervasive and distributed networks, power consumption, processing speed, and system adaptation are vital in future smart wearable devices. The visioning and forecasting of how to bring computation to the edge in smart sensors have already begun, with an aspiration to provide adaptive extreme edge computing. Here, we provide a holistic view of hardware and theoretical solutions towards smart wearable devices that can provide guidance to research in this pervasive computing era. We propose various solutions for biologically plausible models for continual learning in neuromorphic computing technologies for wearable sensors. To envision this concept, we provide a systematic outline in which prospective low power and low latency scenarios of wearable sensors in neuromorphic platforms are expected. We successively describe vital potential landscapes of neuromorphic processors exploiting complementary metal-oxide semiconductors (CMOS) and emerging memory technologies (e.g. memristive devices). Furthermore, we evaluate the requirements for edge computing within wearable devices in terms of footprint, power consumption, latency, and data size. We additionally investigate the challenges beyond neuromorphic computing hardware, algorithms and devices that could impede enhancement of adaptive edge computing in smart wearable devices.
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Submitted 29 December, 2020;
originally announced December 2020.
