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Showing 1–2 of 2 results for author: Carballido, M J

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  1. arXiv:2402.03931  [pdf, other

    cond-mat.mes-hall cs.LG quant-ph

    Fully autonomous tuning of a spin qubit

    Authors: Jonas Schuff, Miguel J. Carballido, Madeleine Kotzagiannidis, Juan Carlos Calvo, Marco Caselli, Jacob Rawling, David L. Craig, Barnaby van Straaten, Brandon Severin, Federico Fedele, Simon Svab, Pierre Chevalier Kwon, Rafael S. Eggli, Taras Patlatiuk, Nathan Korda, Dominik Zumbühl, Natalia Ares

    Abstract: Spanning over two decades, the study of qubits in semiconductors for quantum computing has yielded significant breakthroughs. However, the development of large-scale semiconductor quantum circuits is still limited by challenges in efficiently tuning and operating these circuits. Identifying optimal operating conditions for these qubits is complex, involving the exploration of vast parameter spaces… ▽ More

    Submitted 6 February, 2024; originally announced February 2024.

  2. arXiv:2107.12975  [pdf, other

    cond-mat.mes-hall cs.LG quant-ph

    Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning

    Authors: B. Severin, D. T. Lennon, L. C. Camenzind, F. Vigneau, F. Fedele, D. Jirovec, A. Ballabio, D. Chrastina, G. Isella, M. de Kruijf, M. J. Carballido, S. Svab, A. V. Kuhlmann, F. R. Braakman, S. Geyer, F. N. M. Froning, H. Moon, M. A. Osborne, D. Sejdinovic, G. Katsaros, D. M. Zumbühl, G. A. D. Briggs, N. Ares

    Abstract: The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scra… ▽ More

    Submitted 27 July, 2021; originally announced July 2021.