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Highly Reproducible and CMOS-compatible VO2-based Oscillators for Brain-inspired Computing
Authors:
Olivier Maher,
Roy Bernini,
Nele Harnack,
Bernd Gotsmann,
Marilyne Sousa,
Valeria Bragaglia,
Siegfried Karg
Abstract:
With remarkable electrical and optical switching properties induced at low power and near room temperature (68C), vanadium dioxide (VO2) has sparked rising interest in unconventional computing among the phase-change materials research community. The scalability and the potential to compute beyond the von Neumann model make VO2 especially appealing for implementation in oscillating neural networks…
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With remarkable electrical and optical switching properties induced at low power and near room temperature (68C), vanadium dioxide (VO2) has sparked rising interest in unconventional computing among the phase-change materials research community. The scalability and the potential to compute beyond the von Neumann model make VO2 especially appealing for implementation in oscillating neural networks for artificial intelligence (AI) applications, to solve constraint satisfaction problems, and for pattern recognition. Its integration into large networks of oscillators on a Silicon platform still poses challenges associated with the stabilization in the correct oxidation state and the ability to fabricate a structure with predictable electrical behavior showing very low variability. In this work, the role played by the different annealing parameters applied by three methods (slow thermal annealing, flash annealing, and rapid thermal annealing), following the vanadium oxide atomic layer deposition (ALD), on the formation of VO2 grains is studied and an optimal substrate stack configuration that minimizes variability between devices is proposed. Material and electrical characterizations are performed on the different films and a step-by-step recipe to build reproducible VO2-based oscillators is presented, which is argued to be made possible thanks to the introduction of a hafnium oxide (HfO2) layer between the silicon substrate and the vanadium oxide layer. Up to seven nearly identical VO2-based devices are contacted simultaneously to create a network of oscillators, paving the way for large-scale implementation of VO2 oscillating neural networks.
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Submitted 13 May, 2024; v1 submitted 5 March, 2024;
originally announced March 2024.
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A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory
Authors:
Laura Bégon-Lours,
Mattia Halter,
Diana Dávila Pineda,
Youri Popoff,
Valeria Bragaglia,
Antonio La Porta,
Daniel Jubin,
Jean Fompeyrine,
Bert Jan Offrein
Abstract:
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cy…
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A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.
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Submitted 21 September, 2023;
originally announced September 2023.
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A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory
Authors:
Laura Bégon-Lours,
Mattia Halter,
Diana Dávila Pineda,
Valeria Bragaglia,
Youri Popoff,
Antonio La Porta,
Daniel Jubin,
Jean Fompeyrine,
Bert Jan Offrein
Abstract:
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and dev…
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A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.
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Submitted 21 September, 2023;
originally announced September 2023.
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A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights
Authors:
Mattia Halter,
Laura Bégon-Lours,
Valeria Bragaglia,
Marilyne Sousa,
Bert Jan Offrein,
Stefan Abel,
Mathieu Luisier,
Jean Fompeyriney
Abstract:
Neuromorphic computing architectures enable the dense co-location of memory and processing elements within a single circuit. This co-location removes the communication bottleneck of transferring data between separate memory and computing units as in standard von Neuman architectures for data-critical applications including machine learning. The essential building blocks of neuromorphic systems are…
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Neuromorphic computing architectures enable the dense co-location of memory and processing elements within a single circuit. This co-location removes the communication bottleneck of transferring data between separate memory and computing units as in standard von Neuman architectures for data-critical applications including machine learning. The essential building blocks of neuromorphic systems are non-volatile synaptic elements such as memristors. Key memristor properties include a suitable non-volatile resistance range, continuous linear resistance modulation and symmetric switching. In this work, we demonstrate voltage-controlled, symmetric and analog potentiation and depression of a ferroelectric Hf$_{57}$Zr$_{43}$O$_{2}$ (HZO) field effect transistor (FeFET) with good linearity. Our FeFET operates with a low writing energy (fJ) and fast programming time (40 ns). Retention measurements have been done over 4-bits depth with low noise (1%) in the tungsten oxide (WO$_{x}$) read out channel. By adjusting the channel thickness from 15nm to 8nm, the on/off ratio of the FeFET can be engineered from 1% to 200% with an on-resistance ideally >100 kOhm, depending on the channel geometry. The device concept is using earth-abundant materials, and is compatible with a back end of line (BEOL) integration into complementary metal-oxidesemiconductor (CMOS) processes. It has therefore a great potential for the fabrication of high density, large-scale integrated arrays of artificial analog synapses.
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Submitted 17 January, 2020;
originally announced January 2020.
