Showing 1–2 of 2 results for author: Bhave, S A

Energy-efficient Hybrid CMOS-NEMS LIF Neuron Circuit in 28 nm CMOS Process

Authors: Saber Moradi, Sunil A. Bhave, Rajit Manohar

Abstract: Designing analog sub-threshold neuromorphic circuits in deep sub-micron technologies e.g. 28 nm can be a daunting task due to the problem of excessive leakage current. We propose novel energy-efficient hybrid CMOS-nano electro-mechanical switches (NEMS) Leaky Integrate and Fire (LIF) neuron and synapse circuits and investigate the impact of NEM switches on the leakage power and overall energy cons… ▽ More Designing analog sub-threshold neuromorphic circuits in deep sub-micron technologies e.g. 28 nm can be a daunting task due to the problem of excessive leakage current. We propose novel energy-efficient hybrid CMOS-nano electro-mechanical switches (NEMS) Leaky Integrate and Fire (LIF) neuron and synapse circuits and investigate the impact of NEM switches on the leakage power and overall energy consumption. We analyze the performance of biologically-inspired neuron circuit in terms of leakage power consumption and present new energy-efficient neural circuits that operate with biologically plausible firing rates. Our results show the proposed CMOS-NEMS neuron circuit is, on average, 35% more energy-efficient than its CMOS counterpart with same complexity in 28 nm process. Moreover, we discuss how NEM switches can be utilized to further improve the scalability of mixed-signal neuromorphic circuits. △ Less

Submitted 19 December, 2017; originally announced December 2017.

Experimental Demonstration of Efficient Spin-Orbit Torque Switching of an MTJ with sub-100 ns Pulses

Authors: Tanay A. Gosavi, Sasikanth Manipatruni, Sriharsha V. Aradhya, Graham E. Rowlands, Dmitri Nikonov, Ian A. Young, Sunil A. Bhave

Abstract: Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the potential to provide a scalable solution for embedded memory. We demonstrate a net reduction in critical charge current for spin torque driven magnetization rever… ▽ More Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the potential to provide a scalable solution for embedded memory. We demonstrate a net reduction in critical charge current for spin torque driven magnetization reversal via using spin-orbit mediated spin current generation. We scaled the dimensions of the spin-orbit electrode to 400 nm and the nanomagnet to 270 nm x 68 nm in a three terminal spin-orbit torque, magnetic tunnel junction (SOT-MTJ) geometry. Our estimated effective spin Hall angle is 0.15-0.20 using the ratio of zero temperature critical current from spin Hall switching and estimated spin current density for switching the magnet. We show bidirectional transient switching using spin-orbit generated spin torque at 100 ns switching pulses reliably followed by transient read operations. We finally compare the static and dynamic response of the SOT-MTJ with transient spin circuit modeling showing the performance of scaled SOT-MTJs to enable nanosecond class non-volatile MTJs. △ Less

Submitted 9 August, 2016; v1 submitted 30 June, 2015; originally announced June 2015.