Showing 1–1 of 1 results for author: Barbot, J

Ferroelectric Tunneling Junctions for Edge Computing

Authors: Erika Covi, Quang T. Duong, Suzanne Lancaster, Viktor Havel, Jean Coignus, Justine Barbot, Ole Richter, Philip Klein, Elisabetta Chicca, Laurent Grenouillet, Athanasios Dimoulas, Thomas Mikolajick, Stefan Slesazeck

Abstract: Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits. Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits. △ Less

Submitted 5 July, 2021; originally announced July 2021.

Journal ref: 2021 IEEE International Symposium on Circuits and Systems (ISCAS), 2021, pp. 1-5