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Magnetic Fluctuations in Niobium Pentoxide
Authors:
Y. Krasnikova,
A. A. Murthy,
F. Crisa,
M. Bal,
Z. Sung,
J. Lee,
A. Cano,
D. M. T. van Zanten,
A. Romanenko,
A. Grassellino,
A. Suter,
T. Prokscha,
Z. Salman
Abstract:
Using a spin-polarized muon beam we were able to capture magnetic dynamics in an amorphous niobium pentoxide thin film. Muons are used to probe internal magnetic fields produced by defects. Magnetic fluctuations could be described by the dynamical Kubo-Toyabe model considering a time-dependent local magnetic field. We state that observed fluctuations result from the correlated motion of electron s…
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Using a spin-polarized muon beam we were able to capture magnetic dynamics in an amorphous niobium pentoxide thin film. Muons are used to probe internal magnetic fields produced by defects. Magnetic fluctuations could be described by the dynamical Kubo-Toyabe model considering a time-dependent local magnetic field. We state that observed fluctuations result from the correlated motion of electron spins. We expect that oxygen vacancies play a significant role in these films and lead to a complex magnetic field distribution which is non-stationary. The characteristic average rate of magnetic field change is on the order of 100~MHz. The observed dynamics may provide insight into potential noise sources in Nb-based superconducting devices, while also highlighting the limitations imposed by amorphous oxides.
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Submitted 17 December, 2023;
originally announced December 2023.
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Systematic Improvements in Transmon Qubit Coherence Enabled by Niobium Surface Encapsulation
Authors:
Mustafa Bal,
Akshay A. Murthy,
Shaojiang Zhu,
Francesco Crisa,
Xinyuan You,
Ziwen Huang,
Tanay Roy,
Jaeyel Lee,
David van Zanten,
Roman Pilipenko,
Ivan Nekrashevich,
Andrei Lunin,
Daniel Bafia,
Yulia Krasnikova,
Cameron J. Kopas,
Ella O. Lachman,
Duncan Miller,
Josh Y. Mutus,
Matthew J. Reagor,
Hilal Cansizoglu,
Jayss Marshall,
David P. Pappas,
Kim Vu,
Kameshwar Yadavalli,
**-Su Oh
, et al. (15 additional authors not shown)
Abstract:
We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigati…
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We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different cap** materials, such as tantalum, aluminum, titanium nitride, and gold, and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T$_1$ relaxation times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When cap** niobium with tantalum, we obtain median qubit lifetimes above 300 microseconds, with maximum values up to 600 microseconds, that represent the highest lifetimes to date for superconducting qubits prepared on both sapphire and silicon. Our comparative structural and chemical analysis suggests why amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.
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Submitted 24 January, 2024; v1 submitted 25 April, 2023;
originally announced April 2023.
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Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
Authors:
A. Hertel,
M. Eichinger,
L. O. Andersen,
D. M. T. van Zanten,
S. Kallatt,
P. Scarlino,
A. Kringhøj,
J. M. Chavez-Garcia,
G. C. Gardner,
S. Gronin,
M. J. Manfra,
A. Gyenis,
M. Kjaergaard,
C. M. Marcus,
K. D. Petersson
Abstract:
We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer layers. We show that low loss superconducting resonators with an internal quality of $2\times 10^5$ can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and reado…
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We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer layers. We show that low loss superconducting resonators with an internal quality of $2\times 10^5$ can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, $T_{1}\approx 700\,\mathrm{ns}$, and dephasing times, $T_2^{\ast}\approx 20\,\mathrm{ns}$ and $T_{\mathrm{2,echo}} \approx 1.3\,\mathrm{μs}$. Further, we infer a high junction transparency of $0.4 - 0.9$ from an analysis of the qubit anharmonicity.
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Submitted 22 February, 2022;
originally announced February 2022.
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Electrostatic control of quasiparticle poisoning in a hybrid semiconductor-superconductor island
Authors:
H. Q. Nguyen,
D. Sabonis,
D. Razmadze,
E. T. Mannila,
V. F. Maisi,
D. M. T. van Zanten,
E. C. T. O'Farrell,
P. Krogstrup,
F. Kuemmeth,
J. P. Pekola,
C. M. Marcus
Abstract:
The performance of superconducting devices is often degraded by the uncontrolled appearance and disappearance of quasiparticles, a process known as poisoning. We demonstrate electrostatic control of quasiparticle poisoning in the form of single-charge tunneling across a fixed barrier onto a Coulomb island in an InAs/Al hybrid nanowire. High-bandwidth charge sensing was used to monitor charge occup…
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The performance of superconducting devices is often degraded by the uncontrolled appearance and disappearance of quasiparticles, a process known as poisoning. We demonstrate electrostatic control of quasiparticle poisoning in the form of single-charge tunneling across a fixed barrier onto a Coulomb island in an InAs/Al hybrid nanowire. High-bandwidth charge sensing was used to monitor charge occupancy of the island across Coulomb blockade peaks, where tunneling rates were maximal, and Coulomb valleys, where tunneling was absent. Electrostatic gates changed on-peak tunneling rates by two orders of magnitude for a barrier with fixed normal-state resistance, which we attribute to gate dependence of the size and softness of the induced superconducting gap on the island, corroborated by separate density-of-states measurements. Temperature and magnetic field dependence of tunneling rates are also investigated.
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Submitted 11 February, 2022;
originally announced February 2022.
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Comparing tunneling spectroscopy and charge sensing of Andreev bound states in a semiconductor-superconductor hybrid nanowire structure
Authors:
Deividas Sabonis,
David van Zanten,
Judith Suter,
Torsten Karzig,
Dmitry I. Pikulin,
Jukka I. Väyrynen,
Eoin O'Farrell,
Davydas Razmadze,
Peter Krogstrup,
Charles M. Marcus
Abstract:
Transport studies of Andreev bound states (ABSs) are complicated by the interplay of charging effects and superconductivity. Here, we compare transport approaches to ABS spectroscopy in a semiconductor-superconductor island to a charge-sensing approach based on an integrated radio-frequency single-electron transistor. Consistency of the methods demonstrates that fast, non-invasive charge sensing a…
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Transport studies of Andreev bound states (ABSs) are complicated by the interplay of charging effects and superconductivity. Here, we compare transport approaches to ABS spectroscopy in a semiconductor-superconductor island to a charge-sensing approach based on an integrated radio-frequency single-electron transistor. Consistency of the methods demonstrates that fast, non-invasive charge sensing allows accurate quantitative measurement of ABSs while eluding some complexities of transport.
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Submitted 18 May, 2021;
originally announced May 2021.
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Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
Authors:
A. Hertel,
L. O. Andersen,
D. M. T. van Zanten,
M. Eichinger,
P. Scarlino,
S. Yadav,
J. Karthik,
S. Gronin,
G. C. Gardner,
M. J. Manfra,
C. M. Marcus,
K. D. Petersson
Abstract:
We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high resistivity silicon substrate. We characterized the electrical properties of this material system at millikelvin temperatures and observed a high aver…
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We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high resistivity silicon substrate. We characterized the electrical properties of this material system at millikelvin temperatures and observed a high average field-effect mobility of $μ\approx 3200\,\mathrm{cm^2/Vs}$ for the InAs channel, and a hard induced superconducting gap. Josephson junctions exhibited a high interface transmission, $\mathcal{T} \approx 0.75 $, gate voltage tunable switching current with a product of critical current and normal state resistance, $I_{\mathrm{C}}R_{\mathrm{N}} \approx 83\,\mathrm{μV}$, and signatures of multiple Andreev reflections. These results pave the way for scalable and high coherent gate voltage tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.
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Submitted 8 April, 2021;
originally announced April 2021.
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Magnetic-Field-Induced Transition in a Quantum Dot Coupled to a Superconductor
Authors:
A. García Corral,
D. M. T. van Zanten,
K. J. Franke,
H. Courtois,
S. Florens,
C. B. Winkelmann
Abstract:
The magnetic moment of a quantum dot can be screened by its coupling to a superconducting reservoir, depending on the hierarchy of the superconducting gap and the relevant Kondo scale. This screening-unscreening transition can be driven by electrostatic gating, tunnel coupling, and, as we demonstrate here, magnetic field. We perform high-resolution spectroscopy of subgap excitations near the scree…
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The magnetic moment of a quantum dot can be screened by its coupling to a superconducting reservoir, depending on the hierarchy of the superconducting gap and the relevant Kondo scale. This screening-unscreening transition can be driven by electrostatic gating, tunnel coupling, and, as we demonstrate here, magnetic field. We perform high-resolution spectroscopy of subgap excitations near the screening-unscreening transition of asymmetric superconductor - quantum dot - superconductor (S-QD-S) junctions formed by the electromigration technique. Our measurements reveal a re-entrant phase boundary determined by the competition between Zeeman energy and gap reduction with magnetic field. We further track the evolution of the phase transition with increasing temperature, which is also evidenced by thermal replicas of subgap states.
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Submitted 9 December, 2019;
originally announced December 2019.
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Dispersive sensing in hybrid InAs/Al nanowires
Authors:
Deividas Sabonis,
Eoin C. T. O'Farrell,
Davydas Razmadze,
David M. T. van Zanten,
Judith Suter,
Peter Krogstrup,
Charles M. Marcus
Abstract:
Dispersive charge sensing is realized in hybrid semiconductor-superconductor nanowires in gate-defined single- and double-island device geometries. Signal-to-noise ratios (SNRs) were measured both in the frequency and time domain. Frequency-domain measurements were carried out as a function of frequency and power and yield a charge sensitivity of $1 \times 10^{-3} e/\sqrt{\rm Hz}$ for an 11 MHz me…
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Dispersive charge sensing is realized in hybrid semiconductor-superconductor nanowires in gate-defined single- and double-island device geometries. Signal-to-noise ratios (SNRs) were measured both in the frequency and time domain. Frequency-domain measurements were carried out as a function of frequency and power and yield a charge sensitivity of $1 \times 10^{-3} e/\sqrt{\rm Hz}$ for an 11 MHz measurement bandwidth. Time-domain measurements yield SNR > 1 for 20 $μ$s integration time. At zero magnetic field, photon-assisted tunneling was detected dispersively in a double-island geometry, indicating coherent hybridization of the two superconducting islands. At an axial magnetic field of 0.6 T, subgap states are detected dispersively, demonstrating the suitability of the method for sensing in the topological regime.
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Submitted 25 June, 2019;
originally announced June 2019.
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Photon Assisted Tunneling of Zero Modes in a Majorana Wire
Authors:
David M. T. van Zanten,
Deividas Sabonis,
Judith Suter,
Jukka I. Väyrynen,
Torsten Karzig,
Dmitry I. Pikulin,
Eoin C. T. O'Farrell,
Davydas Razmadze,
Karl D. Petersson,
Peter Krogstrup,
Charles M. Marcus
Abstract:
Hybrid nanowires with proximity-induced superconductivity in the topological regime host Majorana zero modes (MZMs) at their ends, and networks of such structures can produce topologically protected qubits. In a double-island geometry where each segment hosts a pair of MZMs, inter-pair coupling mixes the charge parity of the islands and opens an energy gap between the even and odd charge states at…
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Hybrid nanowires with proximity-induced superconductivity in the topological regime host Majorana zero modes (MZMs) at their ends, and networks of such structures can produce topologically protected qubits. In a double-island geometry where each segment hosts a pair of MZMs, inter-pair coupling mixes the charge parity of the islands and opens an energy gap between the even and odd charge states at the inter-island charge degeneracy. Here, we report on the spectroscopic measurement of such an energy gap in an InAs/Al double-island device by tracking the position of the microwave-induced quasiparticle (qp) transitions using a radio-frequency (rf) charge sensor. In zero magnetic field, photon assisted tunneling (PAT) of Cooper pairs gives rise to resonant lines in the 2e-2e periodic charge stability diagram. In the presence of a magnetic field aligned along the nanowire, resonance lines are observed parallel to the inter-island charge degeneracy of the 1e-1e periodic charge stability diagram, where the 1e periodicity results from a zero-energy sub-gap state that emerges in magnetic field. Resonant lines in the charge stability diagram indicate coherent photon assisted tunneling of single-electron states, changing the parity of the two islands. The dependence of resonant frequency on detuning indicates a sizable (GHz-scale) hybridization of zero modes across the junction separating islands.
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Submitted 2 February, 2019;
originally announced February 2019.
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Radio-frequency methods for Majorana-based quantum devices: fast charge sensing and phase diagram map**
Authors:
Davydas Razmadze,
Deividas Sabonis,
Filip K. Malinowski,
Gerbold C. Menard,
Sebastian Pauka,
Hung Nguyen,
David M. T. van Zanten,
Eoin C. T. O'Farrell,
Judith Suter,
Peter Krogstrup,
Ferdinand Kuemmeth,
Charles M. Marcus
Abstract:
Radio-frequency (RF) reflectometry is implemented in hybrid semiconductor-superconductor nanowire systems designed to probe Majorana zero modes. Two approaches are presented. In the first, hybrid nanowire-based devices are part of a resonant circuit, allowing conductance to be measured as a function of several gate voltages ~40 times faster than using conventional low-frequency lock-in methods. In…
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Radio-frequency (RF) reflectometry is implemented in hybrid semiconductor-superconductor nanowire systems designed to probe Majorana zero modes. Two approaches are presented. In the first, hybrid nanowire-based devices are part of a resonant circuit, allowing conductance to be measured as a function of several gate voltages ~40 times faster than using conventional low-frequency lock-in methods. In the second, nanowire devices are capacitively coupled to a nearby RF single-electron transistor made from a separate nanowire, allowing RF detection of charge, including charge-only measurement of the crossover from 2e inter-island charge transitions at zero magnetic field to 1e transitions at axial magnetic fields above 0.6 T, where a topological state is expected. Single-electron sensing yields signal-to-noise exceeding 3 and visibility 99.8% for a measurement time of 1 μs.
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Submitted 2 February, 2019;
originally announced February 2019.
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Single Quantum Level Electron Turnstile
Authors:
D. M. T. van Zanten,
D. M. Basko,
I. M. Khaymovich,
J. P. Pekola,
H. Courtois,
C. B. Winkelmann
Abstract:
We report on the realization of a single-electron source, where current is transported through a single-level quantum dot (Q), tunnel-coupled to two superconducting leads (S). When driven with an ac gate voltage, the experiment demonstrates electron turnstile operation. Compared to the more conventional superconductor - normal metal - superconductor turnstile, our SQS device presents a number of n…
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We report on the realization of a single-electron source, where current is transported through a single-level quantum dot (Q), tunnel-coupled to two superconducting leads (S). When driven with an ac gate voltage, the experiment demonstrates electron turnstile operation. Compared to the more conventional superconductor - normal metal - superconductor turnstile, our SQS device presents a number of novel properties, including higher immunity to the unavoidable presence of non-equilibrium quasiparticles in superconducting leads. In addition, we demonstrate its ability to deliver electrons with a very narrow energy distribution.
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Submitted 11 January, 2016;
originally announced January 2016.
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Probing Hybridization of a Single Energy Level Coupled to Superconducting Leads
Authors:
D. M. T. van Zanten,
H. Courtois,
C. B. Winkelmann
Abstract:
Electron transport through a quantum dot coupled to superconducting leads shows a sharp conductance onset when a quantum dot orbital level crosses the superconducting coherence peak of one lead. We study superconducting single electron transistors in the weak coupling limit by connecting individual gold nanoparticles with aluminum junctions formed by electromigration. We show that the transport fe…
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Electron transport through a quantum dot coupled to superconducting leads shows a sharp conductance onset when a quantum dot orbital level crosses the superconducting coherence peak of one lead. We study superconducting single electron transistors in the weak coupling limit by connecting individual gold nanoparticles with aluminum junctions formed by electromigration. We show that the transport features close to the conductance onset threshold can be accurately described by the quantum dot levels' hybridization with the leads, which is strongly enhanced by the divergent density of states at the superconducting gap edge. This highlights the importance of electron cotunneling effects in spectroscopies with superconducting probes.
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Submitted 25 June, 2015;
originally announced June 2015.
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Niobium-based superconducting nano-devices fabrication using all-metal suspended masks
Authors:
S. Samaddar,
D. van Zanten,
A. Fay,
B. Sacépé,
H. Courtois,
C. B. Winkelmann
Abstract:
We report a novel method for the fabrication of superconducting nanodevices based on niobium. The well-known difficulties of lithographic patterning of high-quality niobium are overcome by replacing the usual organic resist mask by a metallic one. The quality of the fabrication procedure is demonstrated by the realization and characterization of long and narrow superconducting lines and niobium-go…
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We report a novel method for the fabrication of superconducting nanodevices based on niobium. The well-known difficulties of lithographic patterning of high-quality niobium are overcome by replacing the usual organic resist mask by a metallic one. The quality of the fabrication procedure is demonstrated by the realization and characterization of long and narrow superconducting lines and niobium-gold-niobium proximity SQUIDs.
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Submitted 16 July, 2013; v1 submitted 19 April, 2013;
originally announced April 2013.
