Showing 1–5 of 5 results for author: van Weperen, I

Spin-orbit interaction in InSb nanowires

Authors: I. van Weperen, B. Tarasinski, D. Eeltink, V. S. Pribiag, S. R. Plissard, E. P. A. M. Bakkers, L. P. Kouwenhoven, M. Wimmer

Abstract: We use magnetoconductance measurements in dual-gated InSb nanowire devices together with a theoretical analysis of weak antilocalization to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our three-dimensional wires is very different compared to wires in two-dimensional electron gases. We obtain a large Rashba spin-orbit strength of $0.5 -1\,\text{eVÅ}$ co… ▽ More We use magnetoconductance measurements in dual-gated InSb nanowire devices together with a theoretical analysis of weak antilocalization to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our three-dimensional wires is very different compared to wires in two-dimensional electron gases. We obtain a large Rashba spin-orbit strength of $0.5 -1\,\text{eVÅ}$ corresponding to a spin-orbit energy of $0.25-1\,\text{meV}$. These values underline the potential of InSb nanowires in the study of Majorana fermions in hybrid semiconductor-superconductor devices. △ Less

Submitted 18 May, 2015; v1 submitted 2 December, 2014; originally announced December 2014.

Comments: Version as accepted for publication as a Rapid in Phys. Rev. B

Journal ref: Phys. Rev. B 91, 201413(R) (2015)

Towards high mobility InSb nanowire devices

Authors: Önder Gül, David J. van Woerkom, Ilse van Weperen, Diana Car, Sébastien R. Plissard, Erik P. A. M. Bakkers, Leo P. Kouwenhoven

Abstract: We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 Kelvin by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility… ▽ More We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 Kelvin by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility, and after optimization obtain a field effect mobility of $\sim2.5\mathbin{\times}10^4$ cm$^2$/Vs. We further demonstrate the reproducibility of these mobility values which are among the highest reported for nanowires. Our investigations indicate that the mobility is currently limited by adsorption of molecules to the nanowire surface and/or the substrate. △ Less

Submitted 8 May, 2015; v1 submitted 26 November, 2014; originally announced November 2014.

Comments: 13 pages, 5 figures (main text); 7 pages, 2 figures, 2 tables (supplementary text)

Journal ref: Nanotechnology 26 (2015) 215202

Electrical control over single hole spins in nanowire quantum dots

Authors: V. S. Pribiag, S. Nadj-Perge, S. M. Frolov, J. W. G. van den Berg, I. van Weperen, S. R. Plissard, E. P. A. M. Bakkers, L. P. Kouwenhoven

Abstract: Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Holes in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potent… ▽ More Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Holes in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potential for enhanced spin control and longer coherence times. Weaker hyperfine interaction has already been reported in self-assembled quantum dots using quantum optics techniques. However, challenging fabrication has so far kept the promise of hole-spin-based electronic devices out of reach in conventional III-V heterostructures. Here, we report gate-tuneable hole quantum dots formed in InSb nanowires. Using these devices we demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tuneable between hole and electron QDs, enabling direct comparison between the hyperfine interaction strengths, g-factors and spin blockade anisotropies in the two regimes. △ Less

Submitted 11 February, 2013; originally announced February 2013.

Journal ref: Nature Nanotechnology 8, 170-174 (2013)

Conditional operation of a spin qubit

Authors: I. van Weperen, B. D. Armstrong, E. A. Laird, J. Medford, C. M. Marcus, M. P. Hanson, A. C. Gossard

Abstract: We report coherent operation of a singlet-triplet qubit controlled by the arrangement of two electrons in an adjacent double quantum dot. The system we investigate consists of two pairs of capacitively coupled double quantum dots fabricated by electrostatic gates on the surface of a GaAs heterostructure. We extract the strength of the capacitive coupling between qubit and double quantum dot and sh… ▽ More We report coherent operation of a singlet-triplet qubit controlled by the arrangement of two electrons in an adjacent double quantum dot. The system we investigate consists of two pairs of capacitively coupled double quantum dots fabricated by electrostatic gates on the surface of a GaAs heterostructure. We extract the strength of the capacitive coupling between qubit and double quantum dot and show that the present geometry allows fast conditional gate operation, opening pathways to multi-qubit control and implementation of quantum algorithms with spin qubits. △ Less

Submitted 9 February, 2011; v1 submitted 28 January, 2011; originally announced January 2011.

Comments: related papers here: http://marcuslab.harvard.edu

Journal ref: Phys. Rev. Lett. 107 030506 (2011)

Control and coherence of the optical transition of single defect centers in diamond

Authors: Lucio Robledo, Hannes Bernien, Ilse van Weperen, Ronald Hanson

Abstract: We demonstrate coherent control of the optical transition of single Nitrogen-Vacancy defect centers in diamond. On applying short resonant laser pulses, we observe optical Rabi oscillations with a half-period as short as 1 nanosecond, an order of magnitude shorter than the spontaneous emission time. By studying the decay of Rabi oscillations, we find that the decoherence is dominated by laser-indu… ▽ More We demonstrate coherent control of the optical transition of single Nitrogen-Vacancy defect centers in diamond. On applying short resonant laser pulses, we observe optical Rabi oscillations with a half-period as short as 1 nanosecond, an order of magnitude shorter than the spontaneous emission time. By studying the decay of Rabi oscillations, we find that the decoherence is dominated by laser-induced spectral jumps. By using a low-power probe pulse as a detuning sensor and applying post-selection, we demonstrate that spectral diffusion can be overcome in this system to generate coherent photons. △ Less

Submitted 24 May, 2010; originally announced May 2010.

Comments: 5 pages,4 figures

Journal ref: Phys. Rev. Lett. 105, 177403 (2010)