Showing 1–50 of 184 results for author: van Wees, B J

A mechanism for electrostatically generated magnetoresistance in chiral systems without spin-dependent transport

Authors: Sytze H. Tirion, Bart J. van Wees

Abstract: Significant attention has been drawn to electronic transport in chiral materials coupled to ferromagnets in the chirality induced spin selectivity (CISS) effect. A large magnetoresistance (MR) is usually observed which is widely interpreted to originate from spin (dependent) transport. However, there are severe discrepancies between the experimental results and theoretical interpretations, most no… ▽ More Significant attention has been drawn to electronic transport in chiral materials coupled to ferromagnets in the chirality induced spin selectivity (CISS) effect. A large magnetoresistance (MR) is usually observed which is widely interpreted to originate from spin (dependent) transport. However, there are severe discrepancies between the experimental results and theoretical interpretations, most notably the apparent failure of the Onsager reciprocity relation in the linear response regime. We provide an alternative explanation for the mechanism of the two terminal MR in chiral systems coupled to a ferromagnet. For this we point out that it was observed that the electrostatic contact potential of chiral materials on a ferromagnet depends on the magnetization direction and chirality. In our explanation this causes the transport barrier to be modified by the magnetization direction, already in equilibrium, in the absence of a bias current. This strongly alters the charge transport through/over the barrier, not requiring spin transport. This provides a mechanism that allows the linear response resistance to be sensitive to the magnetization direction and also explains the failure of the Onsager reciprocity relations. We propose experimental configurations to confirm our alternative mechanism for MR. △ Less

Submitted 1 February, 2024; originally announced February 2024.

Efficient Magnon Injection and Detection via the Orbital Rashba Edelstein Effect

Authors: J. A. Mendoza-Rodarte, M. Cosset-Chéneau, B. J. van Wees, M. H. D. Guimarães

Abstract: Orbital currents and accumulation provide a new avenue to boost spintronic effects in nanodevices. Here we use interconversion effects between charge current and orbital angular momentum to demonstrate a dramatic increase in the magnon spin injection and detection efficiencies in nanodevices consisting of a magnetic insulator contacted by Pt/CuOx electrodes. Moreover, we note distinct variations i… ▽ More Orbital currents and accumulation provide a new avenue to boost spintronic effects in nanodevices. Here we use interconversion effects between charge current and orbital angular momentum to demonstrate a dramatic increase in the magnon spin injection and detection efficiencies in nanodevices consisting of a magnetic insulator contacted by Pt/CuOx electrodes. Moreover, we note distinct variations in efficiency for magnon spin injection and detection, indicating a disparity in the direct and inverse orbital Rashba Edelstein effect efficiencies. △ Less

Submitted 2 January, 2024; originally announced January 2024.

Electrostatically controlled spin polarization in Graphene-CrSBr magnetic proximity heterostructures

Authors: Boxuan Yang, Bibek Bhujel, Daniel G. Chica, Evan J. Telford, Xavier Roy, Maxen Cosset-Chéneau, Bart J. van Wees

Abstract: The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as an active component in spintronics devices. The electrostatic control of this spin polarization in graphene has however never been demonstrated so far. We show… ▽ More The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as an active component in spintronics devices. The electrostatic control of this spin polarization in graphene has however never been demonstrated so far. We show that interfacing graphene with the van der Waals antiferromagnet CrSBr results in an unconventional manifestation of the quantum Hall effect, which can be attributed to the presence of counterflowing spin-polarized edge channels originating from the spin-dependent exchange shift in graphene. We extract an exchange shift ranging from 27 to 32 meV, and show that it also produces an electrostatically tunable spin polarization of the electron/hole carriers in graphene ranging from -50 % to +69 % in the absence of a magnetic field. This proof of principle provides a starting point for the use of graphene as an electrostatically tunable source of spin current and could allow this system to generate a large magnetoresistance in gate tunable spin valve devices. △ Less

Submitted 12 December, 2023; originally announced December 2023.

Fabrication of damage-free and/or contamination-free sub-um electrodes using PMMA masks

Authors: Alexey A. Kaverzin, Bart J. van Wees, Eiji Saitoh

Abstract: Quality of the electrical contacts and interfaces in various metal/semiconductor/insulator heterostructures is one of the pivotal aspects in both applied and fundamental research areas. For instance, non-optimal contact resistance can limit the overall efficiency of a certain developed technology and thus considerably narrow the range or fully block its practical application. On the other hand in… ▽ More Quality of the electrical contacts and interfaces in various metal/semiconductor/insulator heterostructures is one of the pivotal aspects in both applied and fundamental research areas. For instance, non-optimal contact resistance can limit the overall efficiency of a certain developed technology and thus considerably narrow the range or fully block its practical application. On the other hand in fundamental research it is often the case that the manifestation of targeted phenomenon crucially depends on the level of contamination in the fabricated experimental samples. Here we offer a set of recipes that are aimed at contamination-free and damage-free fabrication of the devices, mostly developed for the two dimensional materials, but nevertheless applicable for a wider range of the systems, where the quality of the interfaces and/or non-invasiveness of the fabrication recipes are important. Our recipes are based on the preparation of the flexible PMMA membranes, with the help of which we can prepare residue-free or damage-free electrical connections to the studied material. △ Less

Submitted 17 November, 2023; originally announced November 2023.

Crystallographic-dependent bilinear magnetoelectric resistance in a thin WTe$_2$ layer

Authors: Tian Liu, Arunesh Roy, Jan Hidding, Homayoun Jafari, Dennis K. de Wal, Jagoda Slawinska, Marcos H. D. Guimarães, Bart J. van Wees

Abstract: The recently reported Bilinear Magnetoeletric Resistance (BMR) in novel materials with rich spin textures, such as bismuth selenide (Bi$_2$Se$_3$) and tungsten ditelluride (WTe$_2$), opens new possibilities for probing the spin textures via magneto-transport measurements. By its nature, the BMR effect is directly linked to the crystal symmetry of the materials and its spin texture. Therefore, unde… ▽ More The recently reported Bilinear Magnetoeletric Resistance (BMR) in novel materials with rich spin textures, such as bismuth selenide (Bi$_2$Se$_3$) and tungsten ditelluride (WTe$_2$), opens new possibilities for probing the spin textures via magneto-transport measurements. By its nature, the BMR effect is directly linked to the crystal symmetry of the materials and its spin texture. Therefore, understanding the crystallographic dependency of the effect is crucial. Here we report the observation of crystallographic-dependent BMR in thin WTe$_2$ layers and explore how it is linked to its spin textures. The linear response measured in first harmonic signals and the BMR measured in second harmonic signals are both studied under a wide range of magnitudes and directions of magnetic field, applied current and at different temperatures. We discover a three-fold symmetry contribution of the BMR when current is applied along the a-axis of the WTe$_2$ thin layer at 10 K, which is absent for when current is applied along the b-axis. △ Less

Submitted 2 October, 2023; originally announced October 2023.

Magnon confinement in an all-on-chip YIG cavity resonator using hybrid YIG/Py magnon barriers

Authors: Obed Alves Santos, Bart J. van Wees

Abstract: Confining magnons in cavities can introduce new functionalities to magnonic devices, enabling future magnonic structures to emulate established photonic and electronic components. As a proof-of-concept, we report magnon confinement in a lithographically defined all-on-chip YIG cavity created between two YIG/Permalloy bilayers. We take advantage of the modified magnetic properties of covered/uncove… ▽ More Confining magnons in cavities can introduce new functionalities to magnonic devices, enabling future magnonic structures to emulate established photonic and electronic components. As a proof-of-concept, we report magnon confinement in a lithographically defined all-on-chip YIG cavity created between two YIG/Permalloy bilayers. We take advantage of the modified magnetic properties of covered/uncovered YIG film to define on-chip distinct regions with boundaries capable of confining magnons. We confirm this by measuring multiple spin pum** voltage peaks in a 400 nm wide platinum strip placed along the center of the cavity. These peaks coincide with multiple spin-wave resonance modes calculated for a YIG slab with the corresponding geometry. The fabrication of micrometer-sized YIG cavities following this technique represents a new approach to control coherent magnons, while the spin pum** voltage in a nanometer-sized Pt strip demonstrates to be a non-invasive local detector of the magnon resonance intensity. △ Less

Submitted 6 October, 2023; v1 submitted 24 June, 2023; originally announced June 2023.

Comments: 30 pages, 12 figures

Soft Magnons in Anisotropic Ferromagnets

Authors: G. E. W. Bauer, P. Tang, M. Elyasi, Y. M. Blanter, B. J. van Wees

Abstract: We discuss spin-wave transport in anisotropic ferromagnets with an emphasis on the zeroes of the band edges as a function of a magnetic field. An associated divergence of the magnon spin should be observable by enhanced magnon conductivities in non-local experiments, especially in two-dimensional ferromagnets. We discuss spin-wave transport in anisotropic ferromagnets with an emphasis on the zeroes of the band edges as a function of a magnetic field. An associated divergence of the magnon spin should be observable by enhanced magnon conductivities in non-local experiments, especially in two-dimensional ferromagnets. △ Less

Submitted 20 April, 2023; originally announced April 2023.

Long distance magnon transport in the van der Waals antiferromagnet CrPS$_4$

Authors: Dennis K. de Wal, Arnaud Iwens, Tian Liu, ** Tang, Gerrit E. W. Bauer, Bart J. van Wees

Abstract: We demonstrate the potential of van der Waals magnets for spintronic applications by reporting long-distance magnon spin transport in the electrically insulating antiferromagnet chromium thiophosphate (CrPS$_4$) with perpendicular magnetic anisotropy. We inject and detect magnon spins non-locally by Pt contacts and monitor the non-local resistance as a function of an in-plane magnetic field up to… ▽ More We demonstrate the potential of van der Waals magnets for spintronic applications by reporting long-distance magnon spin transport in the electrically insulating antiferromagnet chromium thiophosphate (CrPS$_4$) with perpendicular magnetic anisotropy. We inject and detect magnon spins non-locally by Pt contacts and monitor the non-local resistance as a function of an in-plane magnetic field up to 7 Tesla. We observe a non-local resistance over distances up to at least a micron below the Neel temperature (T$_{\rm N}$ = 38 Kelvin) close to magnetic field strengths that saturate the sublattice magnetizations. △ Less

Submitted 9 January, 2023; originally announced January 2023.

Comments: 5 pages, 5 figures

The spin-flop transition in the quasi two dimensional antiferromagnet MnPS3 detected via thermally generated magnon transport

Authors: F. Feringa, J. M. Vink, B. J. van Wees

Abstract: We present the detection of the spin-flop transition in the antiferromagnetic van der Waals material MnPS3 via thermally generated nonlocal magnon transport using permalloy detector strips. The inverse anomalous spin Hall effect has the unique power to detect an out-of-plane spin accumulation which enables us to detect magnons with an out-of-plane spin polarization; in contrast to strips of high s… ▽ More We present the detection of the spin-flop transition in the antiferromagnetic van der Waals material MnPS3 via thermally generated nonlocal magnon transport using permalloy detector strips. The inverse anomalous spin Hall effect has the unique power to detect an out-of-plane spin accumulation which enables us to detect magnons with an out-of-plane spin polarization; in contrast to strips of high spin-orbit material such as Pt which only possess the spin Hall effect and are only sensitive to an in-plane spin polarization of the spin accumulation. We show that nonlocal magnon transport is able to measure the spin-flop transition in the absence of other spurious effects. Our measurements show the detection of magnons generated by the spin Seebeck effect before and after the spin-flop transition where the signal reversal of the magnon spin accumulation agrees with the OOP spin polarization carried by magnon modes before and after the SF transition. △ Less

Submitted 4 October, 2022; originally announced October 2022.

Towards fully two-dimensional spintronic devices

Authors: Alexey A. Kaverzin, Talieh S. Ghiasi, Avalon H. Dismukes, Xavier Roy, Bart J. van Wees

Abstract: Within the field of spintronics major efforts are directed towards develo** applications for spin-based transport devices made fully out of two-dimensional (2D) materials. In this work we present an experimental realization of a spin-valve device where the generation of the spin signal is exclusively attributed to the spin-dependent conductivity of the magnetic graphene resulting from the proxim… ▽ More Within the field of spintronics major efforts are directed towards develo** applications for spin-based transport devices made fully out of two-dimensional (2D) materials. In this work we present an experimental realization of a spin-valve device where the generation of the spin signal is exclusively attributed to the spin-dependent conductivity of the magnetic graphene resulting from the proximity of an interlayer antiferromagnet, CrSBr. We clearly demonstrate that the usage of the conventional 3D magnetic contacts, that are commonly air-sensitive and incompatible with practical technologies, can be fully avoided when graphene/CrSBr heterostructures are employed. Moreover, apart from providing exceptionally long spin relaxation length, the usage of graphene for both generation and transport of the spin allows to automatically avoid the conductivity mismatch between the source and the channel circuits that has to be considered when using conventional low-resistive contacts. Our results address a necessary step in the engineering of spintronic circuitry out of layered materials and precede further developments in the area of complex spin-logic devices. Moreover, we introduce a fabrication procedure where we designed and implemented a recipe for the preparation of electrodes via a damage-free technique that offers an immediate advantage in the fields of air-sensitive and delicate organic materials. △ Less

Submitted 20 February, 2022; originally announced February 2022.

Observation of magnetization surface textures of the van der Waals antiferromagnet FePS3 by spin Hall magnetoresistance

Authors: F. Feringa, G. E. W. Bauer, B. J. van Wees

Abstract: Van der Waals materials are a new platform to study two-dimensional systems, including magnetic order. Since the number of spins is relatively small, measuring the magnetization is challenging. Here we report spin Hall magnetoresistance (SMR) up to room temperature caused by the magnetic surface texture of exfoliated flakes of magnetic van der Waals materials. For the antiferromagnet FePS3 the SMR… ▽ More Van der Waals materials are a new platform to study two-dimensional systems, including magnetic order. Since the number of spins is relatively small, measuring the magnetization is challenging. Here we report spin Hall magnetoresistance (SMR) up to room temperature caused by the magnetic surface texture of exfoliated flakes of magnetic van der Waals materials. For the antiferromagnet FePS3 the SMR amounts to 0.1 % for an applied magnetic field of 7 T at 5 K which implies a substantial canting of the magnetic moments relative to the colinear antiferromagnetic order. The canting is substantial even for a magnetic field along the Néel vector, which illustrates the unique power of the SMR to detect magnetic surface textures in van der Waals magnets. △ Less

Submitted 31 January, 2022; originally announced January 2022.

Spin Hall magnetoresistance in paramagnetic NdGaO3

Authors: V. Eswara Phanindra, A. Das, J. J. L. van Rijn, S. Chen, B. J. van Wees, T. Banerjee

Abstract: In recent years, spin Hall magnetoresistance (SMR) has emerged as an efficient way to probe the spontaneous magnetization state in ordered magnetic systems, by electrical current. Less known is its versatility as a probe of materials that do not possess spontaneous magnetization such as in paramagnets. In this work, SMR is used to probe paramagnetic NdGaO3 (NGO), a rare earth oxide, possessing a s… ▽ More In recent years, spin Hall magnetoresistance (SMR) has emerged as an efficient way to probe the spontaneous magnetization state in ordered magnetic systems, by electrical current. Less known is its versatility as a probe of materials that do not possess spontaneous magnetization such as in paramagnets. In this work, SMR is used to probe paramagnetic NdGaO3 (NGO), a rare earth oxide, possessing a sizable spin orbit interaction (L=6). NGO has not been investigated earlier for its efficiency in propagating spins. We have performed extensive temperature and angle dependent-magnetoresistance (ADMR) studies along dissimilar crystallographic axes in NGO, using platinum (Pt) as spin injector and detector and utilizing (inverse) spin Hall effect. We find a close correlation between the temperature dependence of the ADMR response with magnetization in NGO and a linear current bias dependence of the ADMR amplitudes. These are chacteristics of SMR effect in Pt/NGO, arising from the torque acting on localized moments in NGO and considering crystal field induced intermultiplet transitions with temperature. Control experiments on Pt/SrTiO3 and Pt/SiO2 devices were also carried out in order to validate the observed SMR response in Pt/NGO bilayer and to rule out magnetoresistive contributions from Pt. △ Less

Submitted 21 January, 2022; originally announced January 2022.

Giant magnon spin conductivity approaching the two-dimensional transport regime in ultrathin yttrium iron garnet films

Authors: X-Y. Wei, O. Alves Santos, C. H. Sumba Lusero, G. E. W. Bauer, J. Ben Youssef, B. J. van Wees

Abstract: Conductivities are key material parameters that govern various types of transport (electronic charge, spin, heat etc.) driven by thermodynamic forces. Magnons, the elementary excitations of the magnetic order, flow under the gradient of a magnon chemical potential in proportion to a magnon (spin) conductivity $σ_{m}$. The magnetic insulator yttrium iron garnet (YIG) is the material of choice for e… ▽ More Conductivities are key material parameters that govern various types of transport (electronic charge, spin, heat etc.) driven by thermodynamic forces. Magnons, the elementary excitations of the magnetic order, flow under the gradient of a magnon chemical potential in proportion to a magnon (spin) conductivity $σ_{m}$. The magnetic insulator yttrium iron garnet (YIG) is the material of choice for efficient magnon spin transport. Here we report an unexpected giant $σ_{m}$ in record-thin YIG films with thicknesses down to 3.7 nm when the number of occupied two-dimensional (2D) subbands is reduced from a large number to a few, which corresponds to a transition from 3D to 2D magnon transport. We extract a 2D spin conductivity ($\approx1$ S) at room temperature, comparable to the (electronic) spin conductivity of the high-mobility two-dimensional electron gas in GaAs quantum wells at millikelvin temperatures. Such high conductivities offer unique opportunities to develop low-dissipation magnon-based spintronic devices. △ Less

Submitted 12 January, 2022; v1 submitted 30 December, 2021; originally announced December 2021.

Interfacial Spin-Orbit Torques and Magnetic Anisotropy in WSe$_{2}$/Permalloy Bilayers

Authors: Jan Hidding, Sytze H. Tirion, Jamo Momand, Alexey Kaverzin, Maxim Mostovoy, Bart J. van Wees, Bart J. Kooi, Marcos H. D. Guimarães

Abstract: Transition metal dichalcogenides (TMDs) are promising materials for efficient generation of current-induced spin-orbit torques on an adjacent ferromagnetic layer. Numerous effects, both interfacial and bulk, have been put forward to explain the different torques previously observed. Thus far, however, there is no clear consensus on the microscopic origin underlying the spin-orbit torques observed… ▽ More Transition metal dichalcogenides (TMDs) are promising materials for efficient generation of current-induced spin-orbit torques on an adjacent ferromagnetic layer. Numerous effects, both interfacial and bulk, have been put forward to explain the different torques previously observed. Thus far, however, there is no clear consensus on the microscopic origin underlying the spin-orbit torques observed in these TMD/ferromagnet bilayers. To shine light on the microscopic mechanisms at play, here we perform thickness dependent spin-orbit torque measurements on the semiconducting WSe$_{2}$/permalloy bilayer with various WSe$_{2}$ layer thickness, down to the monolayer limit. We observe a large out-of-plane field-like torque with spin-torque conductivities up to $1\times10^4 ({\hbar}/2e) (Ωm)^{-1}$. For some devices, we also observe a smaller in-plane antidam**-like torque, with spin-torque conductivities up to $4\times10^{3} ({\hbar}/2e) (Ωm)^{-1}$, comparable to other TMD-based systems. Both torques show no clear dependence on the WSe$_{2}$ thickness, as expected for a Rashba system. Unexpectedly, we observe a strong in-plane magnetic anisotropy - up to about $6.6\times10^{4} erg/cm^{3}$ - induced in permalloy by the underlying hexagonal WSe$_{2}$ crystal. Using scanning transmission electron microscopy, we confirm that the easy axis of the magnetic anisotropy is aligned to the armchair direction of the WSe$_{2}$. Our results indicate a strong interplay between the ferromagnet and TMD, and unveil the nature of the spin-orbit torques in TMD-based devices. These findings open new avenues for possible methods for optimizing the torques and the interaction with interfaced magnets, important for future non-volatile magnetic devices for data processing and storage. △ Less

Submitted 9 September, 2021; v1 submitted 22 July, 2021; originally announced July 2021.

Comments: 19 pages, 3 figures

Journal ref: J. Phys. Mater. 4 04LT01 (2021)

Linear-response magnetoresistance effects in chiral systems

Authors: Xu Yang, Bart J. van Wees

Abstract: The chirality-induced spin selectivity (CISS) effect enables the detection of chirality as electrical charge signals. It is often studied using a two-terminal circuit geometry where a ferromagnet is connected to a chiral component, and a change of electrical resistance is reported upon magnetization reversal. This is however not expected in the linear response regime because of compensating recipr… ▽ More The chirality-induced spin selectivity (CISS) effect enables the detection of chirality as electrical charge signals. It is often studied using a two-terminal circuit geometry where a ferromagnet is connected to a chiral component, and a change of electrical resistance is reported upon magnetization reversal. This is however not expected in the linear response regime because of compensating reciprocal processes, limiting the interpretation of experimental results. Here we show that magnetoresistance effects can indeed appear even in the linear response regime, either by changing the magnitude or the direction of the magnetization or an applied magnetic field. We illustrate this in a spin-valve device and in a chiral thin film as the CISS-induced Hanle magnetoresistance (CHMR) effect. This effect helps to distinguish spin-transport-related effects from other effects, and can thereby provide further insight into the origin of CISS. △ Less

Submitted 30 September, 2021; v1 submitted 16 June, 2021; originally announced June 2021.

Journal ref: Phys. Rev. B 104, 155420 (2021)

Role of NiO in the nonlocal spin transport through thin NiO films on Y$_3$Fe$_5$O$_{12}$

Authors: Geert R. Hoogeboom, Geert-Jan N. Sint Nicolaas, Andreas Alexander, Olga Kuschel, Joachim Wollschläger, Inga Ennen, Bart J. van Wees, Timo Kuschel

Abstract: In spin transport experiments with spin currents propagating through antiferromagnetic (AFM) material, the antiferromagnet is treated as a mainly passive spin conductor not generating nor adding any spin current to the system. The spin current transmissivity of the AFM NiO is affected by magnetic fluctuations, peaking at the Néel temperature and decreasing by lowering the temperature. In order to… ▽ More In spin transport experiments with spin currents propagating through antiferromagnetic (AFM) material, the antiferromagnet is treated as a mainly passive spin conductor not generating nor adding any spin current to the system. The spin current transmissivity of the AFM NiO is affected by magnetic fluctuations, peaking at the Néel temperature and decreasing by lowering the temperature. In order to study the role of the AFM in local and nonlocal spin transport experiments, we send spin currents through NiO of various thickness placed on Y$_3$Fe$_5$O$_{12}$. The spin currents are injected either electrically or by thermal gradients and measured at a wide range of temperatures and magnetic field strengths. The transmissive role is reflected in the sign change of the local electrically injected signals and the decrease in signal strength of all other signals by lowering the temperature. The thermally generated signals, however, show an additional upturn below 100$\,$K which are unaffected by an increased NiO thickness. A change in the thermal conductivity could affect these signals. The temperature and magnetic field dependence is similar as for bulk NiO, indicating that NiO itself contributes to thermally induced spin currents. △ Less

Submitted 22 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. B 103, 144406 (2021)

Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect

Authors: G. R. Hoogeboom, T. Kuschel, G. E. W. Bauer, M. V. Mostovoy, A. V. Kimel, B. J. van Wees

Abstract: We report on spin Hall magnetoresistance (SMR) and spin Seebeck effect (SSE) in single crystal of the rare-earth antiferromagnet DyFeO$_{3}$ with a thin Pt film contact. The angular shape and symmetry of the SMR at elevated temperatures reflect the antiferromagnetic order of the Fe$^{3+}$ moments as governed by the Zeeman energy, the magnetocrystalline anisotropy and the Dzyaloshinskii-Moriya inte… ▽ More We report on spin Hall magnetoresistance (SMR) and spin Seebeck effect (SSE) in single crystal of the rare-earth antiferromagnet DyFeO$_{3}$ with a thin Pt film contact. The angular shape and symmetry of the SMR at elevated temperatures reflect the antiferromagnetic order of the Fe$^{3+}$ moments as governed by the Zeeman energy, the magnetocrystalline anisotropy and the Dzyaloshinskii-Moriya interaction. We interpret the observed linear dependence of the signal on the magnetic field strength as evidence for field-induced order of the Dy$^{3+}$ moments up to room temperature. At and below the Morin temperature of 50$\,$K, the SMR monitors the spin-reorientation phase transition of Fe$^{3+}$ spins. Below 23$\,$K, additional features emerge that persist below 4$\,$K, the ordering temperature of the Dy$^{3+}$ magnetic sublattice. We conclude that the combination of SMR and SSE is a simple and efficient tool to study spin reorientation phase transitions and sublattice magnetizations. △ Less

Submitted 21 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. B 103, 134406 (2021)

Electrically induced strong modulation of magnons transport in ultrathin magnetic insulator films

Authors: J. Liu, X-Y. Wei, G. E. W. Bauer, J. Ben Youssef, B. J. van Wees

Abstract: Magnon transport through a magnetic insulator can be controlled by current-biased heavy-metal gates that modulate the magnon conductivity via the magnon density. Here, we report nonlinear modulation effects in 10$\,$nm thick yttrium iron garnet (YIG) films. The modulation efficiency is larger than 40\%/mA. The spin transport signal at high DC current density (2.2$\times 10^{11}\,$A/m$^{2}$) satura… ▽ More Magnon transport through a magnetic insulator can be controlled by current-biased heavy-metal gates that modulate the magnon conductivity via the magnon density. Here, we report nonlinear modulation effects in 10$\,$nm thick yttrium iron garnet (YIG) films. The modulation efficiency is larger than 40\%/mA. The spin transport signal at high DC current density (2.2$\times 10^{11}\,$A/m$^{2}$) saturates for a 400$\,$nm wide Pt gate, which indicates that even at high current levels a magnetic instability cannot be reached in spite of the high magnetic quality of the films. △ Less

Submitted 16 November, 2020; originally announced November 2020.

Journal ref: Phys. Rev. B 103, 214425 (2021)

Non-local spin Seebeck effect in the bulk easy-plane antiferromagnet NiO

Authors: Geert R. Hoogeboom, Bart J. van Wees

Abstract: We report the observation of magnon spin currents generated by the Spin Seebeck effect (SSE) in a bulk single crystal of the easy-plane antiferromagnet NiO. A magnetic field induces a non-degeneracy and thereby an imbalance in the population of magnon modes with opposite spin. A temperature gradient then gives rise to a non-zero magnon spin current. This SSE is measured both in a local and a non-l… ▽ More We report the observation of magnon spin currents generated by the Spin Seebeck effect (SSE) in a bulk single crystal of the easy-plane antiferromagnet NiO. A magnetic field induces a non-degeneracy and thereby an imbalance in the population of magnon modes with opposite spin. A temperature gradient then gives rise to a non-zero magnon spin current. This SSE is measured both in a local and a non-local geometry at 5$\,$K in bulk NiO. The magnetic field dependence of the obtained signal is modelled by magnetic field splitting of the low energy magnon modes, affecting the spin Seebeck coefficient. The relevant magnon modes at this temperature are linked to cubic anisotropy and magnetic dipole-dipole interactions. The non-local signal deviates from the expected quadratic Joule heating by saturating at a current from around 75$\,μA$ in the injector. The magnon chemical potential does not decay exponentially with distance and inhomogeneities may be the result of local magnon accumulations. △ Less

Submitted 2 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. B 102, 214415 (2020)

The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

Authors: Jorge Quereda, Jan Hidding, Talieh S. Ghiasi, Bart J. van Wees, Caspar H. van der Wal, Marcos H. D. Guimaraes

Abstract: Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-di… ▽ More Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-dimensional TMDs, and should only be possible if the symmetry of the electronic states is reduced by influences such as an external electric field or mechanical strain. Schottky contacts, nearly ubiquitous in TMD-based transistors, can provide the high electric fields causing a symmetry breaking in the devices. Here, we investigate the effect of these Schottky contacts on the CPC by characterizing the helicity-dependent photoresponse of monolayer MoSe2 devices both with direct metal-MoSe2 Schottky contacts and with h-BN tunnel barriers at the contacts. We find that, when Schottky barriers are present in the device, additional contributions to CPC become allowed, resulting in emergence of CPC for illumination at normal incidence. △ Less

Submitted 20 August, 2020; originally announced August 2020.

Electrical and Thermal Generation of Spin Currents by Magnetic Graphene

Authors: Talieh S. Ghiasi, Alexey A. Kaverzin, Avalon H. Dismukes, Dennis K. de Wal, Xavier Roy, Bart J. van Wees

Abstract: The demand for compact, high-speed and energy-saving circuitry urges higher efficiency of spintronic devices that can offer a viable alternative for the current electronics. The route towards this goal suggests implementing two-dimensional (2D) materials that provide large spin polarization of charge current together with the long-distance transfer of the spin information. Here, for the first time… ▽ More The demand for compact, high-speed and energy-saving circuitry urges higher efficiency of spintronic devices that can offer a viable alternative for the current electronics. The route towards this goal suggests implementing two-dimensional (2D) materials that provide large spin polarization of charge current together with the long-distance transfer of the spin information. Here, for the first time, we experimentally demonstrate a large spin polarization of the graphene conductivity ($\approx 14\%$) arising from a strong induced exchange interaction in proximity to a 2D layered antiferromagnetic. The strong coupling of charge and spin currents in graphene with high efficiency of spin current generation, comparable to that of metallic ferromagnets, together with the observation of spin-dependent Seebeck and anomalous Hall effects, all consistently confirm the magnetic nature of graphene. The high sensitivity of spin transport in graphene to the magnetization of the outermost layer of the adjacent interlayer antiferromagnet, also provides a tool to read out a single magnetic sub-lattice. The first time observations of the electrical and thermal generation of spin currents by magnetic graphene suggest it as the ultimate building block for ultra-thin magnetic memory and sensory devices, combining gate tunable spin-dependent conductivity, long-distance spin transport and spin-orbit coupling all in a single 2D material. △ Less

Submitted 30 July, 2020; originally announced July 2020.

Journal ref: Nature Nanotechnology, 2021

Spin caloritronics in a CrBr$_3$-based magnetic van der Waals heterostructure

Authors: Tian Liu, Julian Peiro, Dennis K. de Wal, Johannes C. Leutenantsmeyer, Marcos H. D. Guimarães, Bart J. van Wees, These authors contributed equally to this work

Abstract: The recently reported magnetic ordering in insulating two-dimensional (2D) materials, such as chromium triiodide (CrI$_3$) and chromium tribromide (CrBr$_3$), opens new possibilities for the fabrication of magneto-electronic devices based on 2D systems. Inevitably, the magnetization and spin dynamics in 2D magnets are strongly linked to Joule heating. Therefore, understanding the coupling between… ▽ More The recently reported magnetic ordering in insulating two-dimensional (2D) materials, such as chromium triiodide (CrI$_3$) and chromium tribromide (CrBr$_3$), opens new possibilities for the fabrication of magneto-electronic devices based on 2D systems. Inevitably, the magnetization and spin dynamics in 2D magnets are strongly linked to Joule heating. Therefore, understanding the coupling between spin, charge and heat, i.e. spin caloritronic effects, is crucial. However, spin caloritronics in 2D ferromagnets remains mostly unexplored, due to their instability in air. Here we develop a fabrication method that integrates spin-active contacts with 2D magnets through hBN encapsulation, allowing us to explore the spin caloritronic effects in these materials. The angular dependence of the thermal spin signal of the CrBr$_3$/Pt system is studied, for different conditions of magnetic field and heating current. We highlight the presence of a significant magnetic proximity effect from CrBr$_3$ on Pt revealed by an anomalous Nernst effect in Pt, and suggest the contribution of the spin Seebeck effect from CrBr$_3$. These results pave the way for future magnonic devices using air-sensitive 2D magnetic insulators. △ Less

Submitted 7 May, 2020; originally announced May 2020.

Journal ref: Phys. Rev. B 101, 205407 (2020)

Carrier Drift Control of Spin Currents in Graphene-Based Spin-Current Demultiplexers

Authors: J. Ingla-Aynés, A A. Kaverzin, B. J. van Wees

Abstract: Electrical control of spin transport is promising for achieving new device functionalities. Here we calculate the propagation of spin currents in a graphene-based spin-current demultiplexer under the effect of drift currents. We show that, using spin- and charge-transport parameters already obtained in experiments, the spin currents can be guided in a controlled way. In particular, spin-current se… ▽ More Electrical control of spin transport is promising for achieving new device functionalities. Here we calculate the propagation of spin currents in a graphene-based spin-current demultiplexer under the effect of drift currents. We show that, using spin- and charge-transport parameters already obtained in experiments, the spin currents can be guided in a controlled way. In particular, spin-current selectivities up to 102 can be achieved for measurements over a distance of 10μm under a moderate drift current density of 20μA/μm, meaning that the spin current in the arm that is off is only 1% of the current in the arm that is on. To illustrate the versatility of this approach, we show similar efficiencies in a device with four outputs and the possibility of multiplexer operation using spin drift. Finally, we explain how the effect can be optimized in graphene and two-dimensional semiconductors. △ Less

Submitted 23 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Applied 10, 044073 (2018)

Nonlinear analog spintronics with van der Waals heterostructures

Authors: S. Omar, M. Gurram, K. Watanabe, T. Taniguchi, M. H. D. Guimarães, B. J. van Wees

Abstract: The current generation of spintronic devices, which use electron-spin relies on linear operations for spin-injection, transport and detection processes. The existence of nonlinearity in a spintronic device is indispensable for spin-based complex signal processing operations. Here we for the first time demonstrate the presence of electron-spin dependent nonlinearity in a spintronic device, and meas… ▽ More The current generation of spintronic devices, which use electron-spin relies on linear operations for spin-injection, transport and detection processes. The existence of nonlinearity in a spintronic device is indispensable for spin-based complex signal processing operations. Here we for the first time demonstrate the presence of electron-spin dependent nonlinearity in a spintronic device, and measure up to 4th harmonic spin-signals via nonlocal spin-valve and Hanle spin-precession measurements. We demonstrate its application for analog signal processing over pure spin-signals such as amplitude modulation and heterodyne detection operations which require nonlinearity as an essential element. Furthermore, we show that the presence of nonlinearity in the spin-signal has an amplifying effect on the energy-dependent conductivity induced nonlinear spin-to-charge conversion effect. The interaction of the two spin-dependent nonlinear effects in the spin transport channel leads to a highly efficient detection of the spin-signal without using ferromagnets. These effects are measured both at 4K and room temperature, and are suitable for their applications as nonlinear circuit elements in the fields of advanced-spintronics and spin-based neuromorphic computing. △ Less

Submitted 21 April, 2020; originally announced April 2020.

Comments: 14 pages, 8 figures

Journal ref: Phys. Rev. Applied 14, 064053 (2020)

Reply to "Comment on 'Spin-dependent electron transmission model for chiral molecules in mesoscopic devices'"

Authors: Xu Yang, Caspar H. van der Wal, Bart J. van Wees

Abstract: Here we emphasize once more the distinction between generating CISS (spin-charge current conversion) in a chiral system and detecting it as magnetoresistance in two-terminal electronic devices. We also highlight important differences between electrical measurement results obtained in the linear response regime and those obtained in the nonlinear regime. Here we emphasize once more the distinction between generating CISS (spin-charge current conversion) in a chiral system and detecting it as magnetoresistance in two-terminal electronic devices. We also highlight important differences between electrical measurement results obtained in the linear response regime and those obtained in the nonlinear regime. △ Less

Submitted 4 March, 2020; v1 submitted 25 February, 2020; originally announced February 2020.

Journal ref: Physical Review B 101 (2), 026404 (2020)

Detecting chirality in two-terminal electronic devices

Authors: Xu Yang, Caspar H. van der Wal, Bart J. van Wees

Abstract: Central to spintronics is the interconversion between electronic charge and spin currents, and this can arise from the chirality-induced spin selectivity (CISS) effect. CISS is often studied as magnetoresistance (MR) in two-terminal (2T) electronic devices containing a chiral (molecular) component and a ferromagnet. However, fundamental understanding of when and how this MR can occur is lacking. H… ▽ More Central to spintronics is the interconversion between electronic charge and spin currents, and this can arise from the chirality-induced spin selectivity (CISS) effect. CISS is often studied as magnetoresistance (MR) in two-terminal (2T) electronic devices containing a chiral (molecular) component and a ferromagnet. However, fundamental understanding of when and how this MR can occur is lacking. Here, we uncover an elementary mechanism that generates such a MR for nonlinear response. It requires energy-dependent transport and energy relaxation within the device. The sign of the MR depends on chirality, charge carrier type, and bias direction. Additionally, we reveal how CISS can be detected in the linear response regime in magnet-free 2T devices, either by forming a chirality-based spin-valve using two or more chiral components, or by Hanle spin precession in devices with a single chiral component. Our results provide operation principles and design guidelines for chirality-based spintronic devices and technologies. △ Less

Submitted 5 March, 2020; v1 submitted 19 December, 2019; originally announced December 2019.

Journal ref: Nano Letters, 20, 8, 6148-6154 (2020)

Colloquium: Spintronics in graphene and other two-dimensional materials

Authors: A. Avsar, H. Ochoa, F. Guinea, B. Ozyilmaz, B. J. van Wees, I. J. Vera-Marun

Abstract: After the first unequivocal demonstration of spin transport in graphene (Tombros et al., 2007), surprisingly at room temperature, it was quickly realized that this novel material was relevant for both fundamental spintronics and future applications. Over the decade since, exciting results have made the field of graphene spintronics blossom, and a second generation of studies has extended to new tw… ▽ More After the first unequivocal demonstration of spin transport in graphene (Tombros et al., 2007), surprisingly at room temperature, it was quickly realized that this novel material was relevant for both fundamental spintronics and future applications. Over the decade since, exciting results have made the field of graphene spintronics blossom, and a second generation of studies has extended to new two-dimensional (2D) compounds. This Colloquium reviews recent theoretical and experimental advances on electronic spin transport in graphene and related 2D materials, focusing on emergent phenomena in van der Waals heterostructures and the new perspectives provided by them. These phenomena include proximity-enabled spin-orbit effects, the coupling of electronic spin to light, electrical tunability, and 2D magnetism. △ Less

Submitted 16 January, 2020; v1 submitted 19 September, 2019; originally announced September 2019.

Comments: 30 pages, 12 figures

Journal ref: Rev. Mod. Phys. 92, 21003 (2020)

Modulation of magnon spin transport in a magnetic gate transistor

Authors: K. S. Das, F. Feringa, M. Middelkamp, B. J. van Wees, I. J. Vera-Marun

Abstract: We demonstrate a modulation of up to 18% in the magnon spin transport in a magnetic insulator (Y$_{3}$Fe$_{5}$O$_{12}$, YIG) using a common ferromagnetic metal (permalloy, Py) as a magnetic control gate. A Py electrode, placed between two Pt injector and detector electrodes, acts as a magnetic gate in our prototypical magnon transistor device. By manipulating the magnetization direction of Py with… ▽ More We demonstrate a modulation of up to 18% in the magnon spin transport in a magnetic insulator (Y$_{3}$Fe$_{5}$O$_{12}$, YIG) using a common ferromagnetic metal (permalloy, Py) as a magnetic control gate. A Py electrode, placed between two Pt injector and detector electrodes, acts as a magnetic gate in our prototypical magnon transistor device. By manipulating the magnetization direction of Py with respect to that of YIG, the transmission of magnons through the Py|YIG interface can be controlled, resulting in a modulation of the non-equilibrium magnon density in the YIG channel between the Pt injector and detector electrodes. This study opens up the possibility of using the magnetic gating effect for magnon-based spin logic applications. △ Less

Submitted 9 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. B 101, 054436 (2020)

Large spin-relaxation anisotropy in bilayer-graphene/WS$_2$ heterostructures

Authors: Siddhartha Omar, Bettadahalli Nandishaiah Madhushankar, Bart Jan van Wees

Abstract: We study spin-transport in bilayer-graphene (BLG), spin-orbit coupled to a tungsten di sulfide (WS$_2$) substrate, and measure a record spin lifetime anisotropy ~40-70, i.e. ratio between the out-of-plane $τ_{\perp}$ and in-plane spin relaxation time $τ_{||}$. We control the injection and detection of in-plane and out-of-plane spins via the shape-anisotropy of the ferromagnetic electrodes. We esti… ▽ More We study spin-transport in bilayer-graphene (BLG), spin-orbit coupled to a tungsten di sulfide (WS$_2$) substrate, and measure a record spin lifetime anisotropy ~40-70, i.e. ratio between the out-of-plane $τ_{\perp}$ and in-plane spin relaxation time $τ_{||}$. We control the injection and detection of in-plane and out-of-plane spins via the shape-anisotropy of the ferromagnetic electrodes. We estimate $τ_{\perp}$ ~ 1-2 ns via Hanle measurements at high perpendicular magnetic fields and via a new tool we develop: Oblique Spin Valve measurements. Using Hanle spin-precession experiments we find a low $τ_{||}$ ~ 30 ps in the electron-doped regime which only weakly depends on the carrier density in the BLG and conductivity of the underlying WS$_2$, indicating proximity-induced spin-orbit coupling (SOC) in the BLG. Such high $τ_{\perp}$ and spin lifetime anisotropy are clear signatures of strong spin-valley coupling for out-of-plane spins in BLG/WS$_2$ systems in the presence of SOC, and unlock the potential of BLG/transition metal dichalcogenide heterostructures for develo** future spintronic applications. △ Less

Submitted 3 July, 2019; originally announced July 2019.

Comments: 19 figures, 13 pages

Journal ref: Phys. Rev. B 100, 155415 (2019)

Charge-to-Spin Conversion by the Rashba-Edelstein Effect in 2D van der Waals Heterostructures up to Room Temperature

Authors: Talieh S. Ghiasi, Alexey A. Kaverzin, Patrick J. Blah, Bart J. van Wees

Abstract: The proximity of a transition metal dichalcogenide (TMD) to graphene imprints a rich spin texture in graphene and complements its high quality charge/spin transport by inducing spin-orbit coupling (SOC). Rashba and valley-Zeeman SOCs are the origin of charge-to-spin conversion mechanisms such as Rashba-Edelstein effect (REE) and spin Hall effect (SHE). In this work, we experimentally demonstrate f… ▽ More The proximity of a transition metal dichalcogenide (TMD) to graphene imprints a rich spin texture in graphene and complements its high quality charge/spin transport by inducing spin-orbit coupling (SOC). Rashba and valley-Zeeman SOCs are the origin of charge-to-spin conversion mechanisms such as Rashba-Edelstein effect (REE) and spin Hall effect (SHE). In this work, we experimentally demonstrate for the first time charge-to-spin conversion due to the REE in a monolayer WS2-graphene van der Waals heterostructure. We measure the current-induced spin polarization up to room temperature and control it by a gate electric field. Our observation of the REE and inverse of the effect (IREE) is accompanied by the SHE which we discriminate by symmetry-resolved spin precession under oblique magnetic fields. These measurements also allow for quantification of the efficiencies of charge-to-spin conversion by each of the two effects. These findings are a clear indication of induced Rashba and valley-Zeeman SOC in graphene that lead to generation of spin accumulation and spin current without using ferromagnetic electrodes. These realizations have considerable significance for spintronic applications, providing accessible routes towards all-electrical spin generation and manipulation in two-dimensional materials. △ Less

Submitted 3 May, 2019; originally announced May 2019.

Journal ref: Nano Lett.2019

Circuit-Model Analysis for Spintronic Devices with Chiral Molecules as Spin Injectors

Authors: Xu Yang, Tom Bosma, Bart J. van Wees, Caspar H. van der Wal

Abstract: Recent research discovered that charge transfer processes in chiral molecules can be spin selective and named the effect chiral-induced spin selectivity (CISS). Follow-up work studied hybrid spintronic devices with conventional electronic materials and chiral (bio)molecules. However, a theoretical foundation for the CISS effect is still in development and the spintronic signals were not evaluated… ▽ More Recent research discovered that charge transfer processes in chiral molecules can be spin selective and named the effect chiral-induced spin selectivity (CISS). Follow-up work studied hybrid spintronic devices with conventional electronic materials and chiral (bio)molecules. However, a theoretical foundation for the CISS effect is still in development and the spintronic signals were not evaluated quantitatively. We present a circuit-model approach that can provide quantitative evaluations. Our analysis assumes the scheme of a recent experiment that used photosystem~I (PSI) as spin injectors, for which we find that the experimentally observed signals are, under any reasonable assumptions on relevant PSI time scales, too high to be fully due to the CISS effect. We also show that the CISS effect can in principle be detected using the same type of solid-state device, and by replacing silver with graphene, the signals due to spin generation can be enlarged four orders of magnitude. Our approach thus provides a generic framework for analyzing this type of experiments and advancing the understanding of the CISS effect. △ Less

Submitted 7 June, 2019; v1 submitted 5 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. B 99, 214428 (2019)

Nonlocal Spin Transport as a Probe of Viscous Magnon Fluids

Authors: Camilo Ulloa, A. Tomadin, J. Shan, M. Polini, B. J. van Wees, R. A. Duine

Abstract: Magnons in ferromagnets behave as a viscous fluid over a length scale, the momentum-relaxation length, below which momentum-conserving scattering processes dominate. We show theoretically that in this hydrodynamic regime viscous effects lead to a sign change in the magnon chemical potential, which can be detected as a sign change in the nonlocal resistance measured in spin transport experiments. T… ▽ More Magnons in ferromagnets behave as a viscous fluid over a length scale, the momentum-relaxation length, below which momentum-conserving scattering processes dominate. We show theoretically that in this hydrodynamic regime viscous effects lead to a sign change in the magnon chemical potential, which can be detected as a sign change in the nonlocal resistance measured in spin transport experiments. This sign change is observable when the injector-detector distance becomes comparable to the momentum-relaxation length. Taking into account momentum- and spin-relaxation processes, we consider the quasiconservation laws for momentum and spin in a magnon fluid. The resulting equations are solved for nonlocal spin transport devices in which spin is injected and detected via metallic leads. Because of the finite viscosity we also find a backflow of magnons close to the injector lead. Our work shows that nonlocal magnon spin transport devices are an attractive platform to develop and study magnon-fluid dynamics. △ Less

Submitted 24 September, 2019; v1 submitted 7 March, 2019; originally announced March 2019.

Journal ref: Phys. Rev. Lett. 123, 117203 (2019)

Semiconductor channel mediated photodo** in h-BN encapsulated monolayer MoSe2 phototransistors

Authors: Jorge Quereda, Talieh S. Ghiasi, Caspar H. van der Wal, Bart J. van Wees

Abstract: In optically excited two-dimensional phototransistors, charge transport is often affected by photodo** effects. Recently, it was shown that such effects are especially strong and persistent for graphene/h-BN heterostructures, and that they can be used to controllably tune the charge neutrality point of graphene. In this work we investigate how this technique can be extended to h BN encapsulated… ▽ More In optically excited two-dimensional phototransistors, charge transport is often affected by photodo** effects. Recently, it was shown that such effects are especially strong and persistent for graphene/h-BN heterostructures, and that they can be used to controllably tune the charge neutrality point of graphene. In this work we investigate how this technique can be extended to h BN encapsulated monolayer MoSe_2 phototransistors at room temperature. By exposing the sample to 785 nm laser excitation we can controllably increase the charge carrier density of the MoSe_2 channel by Δn {\approx} 4.45 {\times} 10^{12} cm^{-2}, equivalent to applying a back gate voltage of 60 V. We also evaluate the efficiency of photodo** at different illumination wavelengths, finding that it is strongly correlated with the light absorption by the MoSe_2 layer, and maximizes for excitation on-resonance with the A exciton absorption. This indicates that the photodo** process involves optical absorption by the MoSe_2 channel, in contrast with the mechanism earlier described for graphene/h-BN heterostroctures. △ Less

Submitted 5 March, 2019; originally announced March 2019.

Temperature dependence of the effective spin-mixing conductance probed with lateral non-local spin valves

Authors: K. S. Das, F. K. Dejene, B. J. van Wees, I. J. Vera-Marun

Abstract: We report the temperature dependence of the effective spin-mixing conductance between a normal metal (aluminium, Al) and a magnetic insulator ($\text{Y}_3\text{Fe}_5\text{O}_{12}$, YIG). Non-local spin valve devices, using Al as the spin transport channel, were fabricated on top of YIG and SiO$_2$ substrates. By comparing the spin relaxation lengths in the Al channel on the two different substrate… ▽ More We report the temperature dependence of the effective spin-mixing conductance between a normal metal (aluminium, Al) and a magnetic insulator ($\text{Y}_3\text{Fe}_5\text{O}_{12}$, YIG). Non-local spin valve devices, using Al as the spin transport channel, were fabricated on top of YIG and SiO$_2$ substrates. By comparing the spin relaxation lengths in the Al channel on the two different substrates, we calculate the effective spin-mixing conductance ($G_\text{s}$) to be $3.3\times10^{12}$~$Ω^{-1}\text{m}^{-2}$ at 293~K for the Al/YIG interface. A decrease of up to 84\% in $G_\text{s}$ is observed when the temperature ($T$) is decreased from 293~K to 4.2~K, with $G_\text{s}$ scaling with $(T/T_\text{c})^{3/2}$. The real part of the spin-mixing conductance ($G_\text{r}\approx 5.7\times10^{13}~ Ω^{-1}\text{m}^{-2}$), calculated from the experimentally obtained $G_\text{s}$, is found to be approximately independent of the temperature. We evidence a hitherto unrecognized underestimation of $G_\text{r}$ extracted from the modulation of the spin signal by rotating the magnetization direction of YIG with respect to the spin accumulation direction in the Al channel, which is found to be 50 times smaller than the calculated value. △ Less

Submitted 23 December, 2018; originally announced December 2018.

Journal ref: Appl. Phys. Lett. 114, 072405 (2019)

Efficient spin transport in a paramagnetic insulator

Authors: Koichi Oyanagi, Saburo Takahashi, Ludo J. Cornelissen, Juan Shan, Shunsuke Daimon, Takashi Kikkawa, Gerrit E. W. Bauer, Bart J. van Wees, Eiji Saitoh

Abstract: The discovery of new materials that efficiently transmit spin currents has been important for spintronics and material science. The electric insulator $\mathrm{Gd}_3\mathrm{Ga}_5\mathrm{O}_{12}$ (GGG) is a superior substrate for growing magnetic films, but has never been considered as a conduit for spin currents. Here we report spin current propagation in paramagnetic GGG over several microns. Sur… ▽ More The discovery of new materials that efficiently transmit spin currents has been important for spintronics and material science. The electric insulator $\mathrm{Gd}_3\mathrm{Ga}_5\mathrm{O}_{12}$ (GGG) is a superior substrate for growing magnetic films, but has never been considered as a conduit for spin currents. Here we report spin current propagation in paramagnetic GGG over several microns. Surprisingly, the spin transport persists up to temperatures of 100 K $\gg$ $T_{\mathrm{g}} = 180$ mK, GGG's magnetic glass-like transition temperature. At 5 K we find a spin diffusion length ${λ_{\mathrm{GGG}}} = 1.8 \pm 0.2 μ$m and a spin conductivity $σ_{\mathrm{GGG}} = (7.3 \pm 0.3) \times10^4$ $\mathrm{Sm}^{-1}$ that is larger than that of the record quality magnet $\mathrm{Y}_3\mathrm{Fe}_5\mathrm{O}_{12}$ (YIG). We conclude that exchange coupling is not required for efficient spin transport, which challenges conventional models and provides new material-design strategies for spintronic devices. △ Less

Submitted 29 November, 2018; originally announced November 2018.

Comments: 21 pages, 4 figures

Journal ref: Nature Communications 10, 4710 (2019)

Independent geometrical control of spin and charge resistances in curved spintronics

Authors: Kumar Sourav Das, Denys Makarov, Paola Gentile, Mario Cuoco, Bart J. van Wees, Carmine Ortix, Ivan J. Vera-Marun

Abstract: Spintronic devices operating with pure spin currents represent a new paradigm in nanoelectronics, with higher energy efficiency and lower dissipation as compared to charge currents. This technology, however, will be viable only if the amount of spin current diffusing in a nanochannel can be tuned on demand while guaranteeing electrical compatibility with other device elements, to which it should b… ▽ More Spintronic devices operating with pure spin currents represent a new paradigm in nanoelectronics, with higher energy efficiency and lower dissipation as compared to charge currents. This technology, however, will be viable only if the amount of spin current diffusing in a nanochannel can be tuned on demand while guaranteeing electrical compatibility with other device elements, to which it should be integrated in high-density three-dimensional architectures. Here, we address these two crucial milestones and demonstrate that pure spin currents can effectively propagate in metallic nanochannels with a three-dimensional curved geometry. Remarkably, the geometric design of the nanochannels can be used to reach an independent tuning of spin transport and charge transport characteristics. These results put the foundation for the design of efficient pure spin current based electronics, which can be integrated in complex three-dimensional architectures. △ Less

Submitted 5 October, 2019; v1 submitted 5 November, 2018; originally announced November 2018.

Comments: 3 figures, plus Supporting Information

Journal ref: Nano Letters 2019

Microwave control of thermal magnon spin transport

Authors: **g Liu, Frank Feringa, Benedetta Flebus, Ludo J. Cornelissen, Johannes C. Leutenantsmeyer, Rembert A. Duine, Bart J. van Wees

Abstract: We observe that an rf microwave field strongly influences the transport of incoherent thermal magnons in yttrium iron garnet. Ferromagnetic resonance in the nonlinear regime suppresses thermal magnon transport by 95%. The transport is also modulated at non-resonant conditions in two cases, both related to the magnon band minimum. Firstly, a strong enhancement of the nonlocal signal appears at a st… ▽ More We observe that an rf microwave field strongly influences the transport of incoherent thermal magnons in yttrium iron garnet. Ferromagnetic resonance in the nonlinear regime suppresses thermal magnon transport by 95%. The transport is also modulated at non-resonant conditions in two cases, both related to the magnon band minimum. Firstly, a strong enhancement of the nonlocal signal appears at a static magnetic field below the resonance condition. This increase only occurs at one field polarity and can be as large as 800%. We attribute this effect to magnon kinetic processes, which give rise to band-minimum magnons and high-energy chiral surface modes. Secondly, the signal increases at a static field above the resonance condition, where the rf frequency coincides with the magnon band minimum. Our study gives insight into the interplay between coherent and incoherent spin dynamics: The rf field modifies the occupation of relevant magnon states and, via kinetic processes, the magnon spin transport. △ Less

Submitted 27 October, 2018; originally announced October 2018.

Journal ref: Phys. Rev. B 99, 054420 (2019)

Spin-Dependent Electron Transmission Model for Chiral Molecules in Mesoscopic Devices

Authors: Xu Yang, Caspar H. van der Wal, Bart J. van Wees

Abstract: Various device-based experiments have indicated that electron transfer in certain chiral molecules may be spin-dependent, a phenomenon known as the Chiral Induced Spin Selectivity (CISS) effect. However, due to the complexity of these devices and a lack of theoretical understanding, it is not always clear to what extent the chiral character of the molecules actually contributes to the magnetic-fie… ▽ More Various device-based experiments have indicated that electron transfer in certain chiral molecules may be spin-dependent, a phenomenon known as the Chiral Induced Spin Selectivity (CISS) effect. However, due to the complexity of these devices and a lack of theoretical understanding, it is not always clear to what extent the chiral character of the molecules actually contributes to the magnetic-field-dependent signals in these experiments. To address this issue, we report here an electron transmission model that evaluates the role of the CISS effect in two-terminal and multi-terminal linear-regime electron transport experiments. Our model reveals that for the CISS effect, the chirality-dependent spin transmission is accompanied by a spin-flip electron reflection process. Furthermore, we show that more than two terminals are required in order to probe the CISS effect in the linear regime. In addition, we propose two types of multi-terminal nonlocal transport measurements that can distinguish the CISS effect from other magnetic-field-dependent signals. Our model provides an effective tool to review and design CISS-related transport experiments, and to enlighten the mechanism of the CISS effect itself. △ Less

Submitted 21 January, 2019; v1 submitted 5 October, 2018; originally announced October 2018.

Journal ref: Phys. Rev. B 99, 024418 (2019)

Gate-Controlled Magnetoresistance of a Paramagnetic Insulator|Platinum Interface

Authors: L. Liang, J. Shan, Q. H. Chen, J. M. Lu, G. R. Blake, T. T. M. Palstra, G. E. W. Bauer, B. J. van Wees, J. T. Ye

Abstract: We report an electric field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator|platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic ga… ▽ More We report an electric field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator|platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic gating as an alternative method to control spintronic devices without using ferromagnets. △ Less

Submitted 19 August, 2018; originally announced August 2018.

Comments: 13 pages, 5 figures

Journal ref: Phys. Rev. B 98, 134402 (2018)

Efficient spin injection into graphene through trilayer hBN tunnel barriers

Authors: Johannes Christian Leutenantsmeyer, Josep Ingla-Aynés, Mallikajurna Gurram, Bart J. van Wees

Abstract: We characterize the spin injection into bilayer graphene fully encapsulated in hBN using trilayer (3L) hexagonal boron nitride (hBN) tunnel barriers. As a function of the DC bias, the differential spin injection polarization is found to rise up to -60% at -250 mV DC bias voltage. We measure a DC spin polarization of $\sim$ 50%, a 30% increase compared to 2L-hBN. The large polarization is confirmed… ▽ More We characterize the spin injection into bilayer graphene fully encapsulated in hBN using trilayer (3L) hexagonal boron nitride (hBN) tunnel barriers. As a function of the DC bias, the differential spin injection polarization is found to rise up to -60% at -250 mV DC bias voltage. We measure a DC spin polarization of $\sim$ 50%, a 30% increase compared to 2L-hBN. The large polarization is confirmed by local, two terminal spin transport measurements up to room temperature. We observe comparable differential spin injection efficiencies from Co/2L-hBN and Co/3L-hBN into graphene and conclude that possible exchange interaction between cobalt and graphene is likely not the origin of the bias dependence. Furthermore, our results show that local gating, arising from the applied DC bias is not responsible for the DC bias dependence. Carrier density dependent measurements of the spin injection efficiency are discussed, where we find no significant modulation of the differential spin injection polarization. We also address the bias dependence of the injection of in-plane and out-of-plane spins and conclude that the spin injection polarization is isotropic and does not depend on the applied bias. △ Less

Submitted 2 August, 2018; originally announced August 2018.

Comments: 8 pages, 6 figures, 5 supplementary notes

Temperature and electric field dependence of spin relaxation in graphene on SrTiO$_3$

Authors: Si Chen, Roald Ruiter, Vikramaditya Mathkar, Bart J. van Wees, Tamalika Banerjee

Abstract: The theoretically predicted intrinsic spin relaxation time of up to 1 $μs$ in graphene along with extremely high mobilities makes it a promising material in spintronics. In spite of extensive experimental studies of spin relaxation and understanding of its precise mechanism, it is still unclear as to why the spin lifetime in graphene is three orders of magnitude below the theoretical predictions.… ▽ More The theoretically predicted intrinsic spin relaxation time of up to 1 $μs$ in graphene along with extremely high mobilities makes it a promising material in spintronics. In spite of extensive experimental studies of spin relaxation and understanding of its precise mechanism, it is still unclear as to why the spin lifetime in graphene is three orders of magnitude below the theoretical predictions. Central to this discrepancy is the role of the local environment including that of the underlying substrate. In this work, we use the electronically rich platform SrTiO$_3$ and study its suitability in supporting spin transport in graphene. We find spin relaxation time and length as large as 1.2 $\pm$ 0.1 ns and 5.6 $\pm$ 0.5 $μm$ respectively at 290 K in graphene on SrTiO$_3$ using a non-local measurement scheme. We analyze the temperature variation of the spin transport parameters in graphene and attribute the temperature dependence of the spin transport parameters in graphene to spin orbit coupling or structural phase transition in SrTiO$_3$. Furthermore, from the gate dependence of the spin transport parameters, the relation between spin relaxation time and momentum relaxation time is extracted; the Elliot-Yaffet and D'Yakonov-Perel' spin relaxation rates are found to be of similar order. △ Less

Submitted 29 November, 2018; v1 submitted 2 August, 2018; originally announced August 2018.

Enhanced magnon spin transport in NiFe$_2$O$_4$ thin films on a lattice-matched substrate

Authors: J. Shan, A. V. Singh, L. Liang, L. Cornelissen, A. Gupta, B. J. van Wees, T. Kuschel

Abstract: We investigate magnon spin transport in epitaxial nickel ferrite (NiFe$_2$O$_4$, NFO) films grown on magnesium gallate spinel (MgGa$_2$O$_4$, MGO) substrates, which have a lattice mismatch with NFO as small as 0.78%, resulting in the reduction of antiphase boundary defects and thus in improved magnetic properties in the NFO films. In the nonlocal transport experiments, enhanced signals are observe… ▽ More We investigate magnon spin transport in epitaxial nickel ferrite (NiFe$_2$O$_4$, NFO) films grown on magnesium gallate spinel (MgGa$_2$O$_4$, MGO) substrates, which have a lattice mismatch with NFO as small as 0.78%, resulting in the reduction of antiphase boundary defects and thus in improved magnetic properties in the NFO films. In the nonlocal transport experiments, enhanced signals are observed for both electrically and thermally excited magnons, and the magnon relaxation length ($λ_m$) of NFO is found to be around 2.5 $μ$m at room temperature. Moreover, at both room and low temperatures, we present distinct features from the nonlocal spin Seebeck signals which arise from magnon polaron formation. Our results demonstrate excellent magnon transport properties (magnon spin conductivity, $λ_m$ and spin mixing conductance at the interface between Pt) of NFO films grown on a lattice-matched substrate that are comparable with those of yttrium iron garnet. △ Less

Submitted 24 July, 2018; originally announced July 2018.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 113, 162403 (2018)

Bias dependent spin injection into graphene on YIG through bilayer hBN tunnel barriers

Authors: J. C. Leutenantsmeyer, T. Liu, M. Gurram, A. A. Kaverzin, B. J. van Wees

Abstract: We study the spin injection efficiency into single and bilayer graphene on the ferrimagnetic insulator Yttrium-Iron-Garnet (YIG) through an exfoliated tunnel barrier of bilayer hexagonal boron nitride (hBN). The contacts of two samples yield a resistance-area product between 5 and 30 k$Ωμ$m$^2$. Depending on an applied DC bias current, the magnitude of the non-local spin signal can be increased or… ▽ More We study the spin injection efficiency into single and bilayer graphene on the ferrimagnetic insulator Yttrium-Iron-Garnet (YIG) through an exfoliated tunnel barrier of bilayer hexagonal boron nitride (hBN). The contacts of two samples yield a resistance-area product between 5 and 30 k$Ωμ$m$^2$. Depending on an applied DC bias current, the magnitude of the non-local spin signal can be increased or suppressed below the noise level. The spin injection efficiency reaches values from -60% to +25%. The results are confirmed with both spin valve and spin precession measurements. The proximity induced exchange field is found in sample A to be (85 $\pm$ 30) mT and in sample B close to the detection limit. Our results show that the exceptional spin injection properties of bilayer hBN tunnel barriers reported by Gurram et al. are not limited to fully encapsulated graphene systems but are also valid in graphene/YIG devices. This further emphasizes the versatility of bilayer hBN as an efficient and reliable tunnel barrier for graphene spintronics. △ Less

Submitted 23 July, 2018; originally announced July 2018.

Comments: 9 pages, 6 figures, 5 supplementary figures

Journal ref: Phys. Rev. B 98, 125422, (2018)

Bilayer h-BN Barriers for Tunneling Contacts in Fully-Encapsulated Monolayer $\mathbf{MoSe_2}$ Field-Effect Transistors

Authors: Talieh S. Ghiasi, Jorge Quereda, Bart J. van Wees

Abstract: The performance of electronic and spintronic devices based on two-dimensional semiconductors (2D SC) is largely dependent on the quality and resistance of the metal/SC electrical contacts, as well as preservation of the intrinsic properties of the SC channel. Direct Metal/SC interaction results in highly resistive contacts due to formation of large Schottky barriers and considerably affects the pr… ▽ More The performance of electronic and spintronic devices based on two-dimensional semiconductors (2D SC) is largely dependent on the quality and resistance of the metal/SC electrical contacts, as well as preservation of the intrinsic properties of the SC channel. Direct Metal/SC interaction results in highly resistive contacts due to formation of large Schottky barriers and considerably affects the properties of the 2D SC. In this work, we address these two important issues in monolayer $\mathrm{MoSe_2}$ Field-Effect transistors (FETs). We encapsulate the $\mathrm{MoSe_2}$ channel with hexagonal Boron Nitride (h-BN), using bilayer h-BN at the metal/SC interface. The bilayer h-BN eliminates the metal/$\mathrm{MoSe_2}$ chemical interactions, preserves the electrical properties of $\mathrm{MoSe_2}$ and reduces the contact resistances by prevention of Fermi-level pinning. We investigate electrical transport in the monolayer $\mathrm{MoSe_2}$ FETs that yields close to intrinsic electron mobilities ($\approx 26\ \mathrm{cm^2 V^{-1} s^{-1}}$) even at room temperature. Moreover, we experimentally study the charge transport through Metal/h-BN/$\mathrm{MoSe_2}$ tunnel contacts and we explicitly show that the dielectric bilayer of h-BN provides highly efficient gating (tuning the Fermi energy) of the $\mathrm{MoSe_2}$ channel at the contact regions even with small biases. Also we provide a theoretical model that allows to understand and reproduce the experimental $I-V$ characteristics of the contacts. These observations give an insight into the electrical behavior of the metal/h-BN/2D SC heterostructure and introduce bilayer h-BN as a suitable choice for high quality tunneling contacts that allows for low energy charge and spin transport. △ Less

Submitted 23 June, 2018; originally announced June 2018.

Comments: 23 pages, 10 figures (including supporting information)

Observation of spin-valley coupling induced large spin lifetime anisotropy in bilayer graphene

Authors: Johannes Christian Leutenantsmeyer, Josep Ingla-Aynés, Jaroslav Fabian, Bart J. van Wees

Abstract: We report the first observation of a large spin lifetime anisotropy in bilayer graphene (BLG) fully encapsulated between hexagonal boron nitride. We characterize the out-of-plane ($τ_\perp$) and in-plane ($τ_\parallel$) spin lifetimes by oblique Hanle spin precession. At 75~K and the charge neutrality point (CNP) we observe a strong anisotropy of $τ_\perp/τ_\parallel$ = 8 $\pm$ 2. This value is co… ▽ More We report the first observation of a large spin lifetime anisotropy in bilayer graphene (BLG) fully encapsulated between hexagonal boron nitride. We characterize the out-of-plane ($τ_\perp$) and in-plane ($τ_\parallel$) spin lifetimes by oblique Hanle spin precession. At 75~K and the charge neutrality point (CNP) we observe a strong anisotropy of $τ_\perp/τ_\parallel$ = 8 $\pm$ 2. This value is comparable to graphene/TMD heterostructures, whereas our high quality BLG provides with $τ_\perp$ up to 9~ns, a more than two orders of magnitude larger spin lifetime. The anisotropy decreases to 3.5 $\pm$ 1 at a carrier density of n = $6\times 10^{11}~$cm$^{-2}$. Temperature dependent measurements show above 75~K a decrease of $τ_\perp/τ_\parallel$ with increasing temperature, reaching the isotropic case close to room temperature. We explain our findings with electric field induced spin-valley coupling arising from the small intrinsic spin orbit fields in BLG of 12~$μ$eV at the CNP. △ Less

Submitted 31 May, 2018; originally announced May 2018.

Comments: 5 pages, 4 figures + supplementary information (6 pages, 11 figures)

Journal ref: Phys. Rev. Lett. 121, 127702 (2018)

Efficient injection and detection of out-of-plane spins via the anomalous spin Hall effect in permalloy nanowires

Authors: K. S. Das, J. Liu, B. J. van Wees, I. J. Vera-Marun

Abstract: We report a novel mechanism for the electrical injection and detection of out-of-plane spin accumulation via the anomalous spin Hall effect (ASHE), where the direction of the spin accumulation can be controlled by manipulating the magnetization of the ferromagnet. This mechanism is distinct from the spin Hall effect (SHE), where the spin accumulation is created along a fixed direction parallel to… ▽ More We report a novel mechanism for the electrical injection and detection of out-of-plane spin accumulation via the anomalous spin Hall effect (ASHE), where the direction of the spin accumulation can be controlled by manipulating the magnetization of the ferromagnet. This mechanism is distinct from the spin Hall effect (SHE), where the spin accumulation is created along a fixed direction parallel to an interface. We demonstrate this unique property of the ASHE in nanowires made of permalloy (Py), to inject and detect out-of-plane spin accumulation in a magnetic insulator, yttrium iron garnet (YIG). We show that the efficiency for the injection/detection of out-of-plane spins can be up to 50% of that of in-plane spins. We further report the possibility to detect spin currents parallel to the Py/YIG interface for spins fully oriented in the out-of-plane direction, resulting in a sign reversal of the non-local magnon spin signal. The new mechanisms that we have demonstrated are highly relevant for spin torque devices and applications. △ Less

Submitted 29 May, 2018; originally announced May 2018.

Journal ref: Nano Lett., 2018, 18 (9), pp 5633-5639

Nonlocal magnon spin transport in yttrium iron garnet with tantalum and platinum spin injection/detection electrodes

Authors: **g Liu, Ludo J. Cornelissen, Juan Shan, Bart J. van Wees, Timo Kuschel

Abstract: We study the magnon spin transport in the magnetic insulator yttrium iron garnet (YIG) in a nonlocal experiment and compare the magnon spin excitation and detection for the heavy metal paramagnetic electrodes platinum (Pt|YIG|Pt) and tantalum (Ta|YIG|Ta). The electrical injection and detection processes rely on the (inverse) spin Hall effect in the heavy metals and the conversion between the elect… ▽ More We study the magnon spin transport in the magnetic insulator yttrium iron garnet (YIG) in a nonlocal experiment and compare the magnon spin excitation and detection for the heavy metal paramagnetic electrodes platinum (Pt|YIG|Pt) and tantalum (Ta|YIG|Ta). The electrical injection and detection processes rely on the (inverse) spin Hall effect in the heavy metals and the conversion between the electron spin and magnon spin at the heavy metal|YIG interface. Pt and Ta possess opposite signs of the spin Hall angle. Furthermore, their heterostructures with YIG have different interface properties, i.e. spin mixing conductances. By varying the distance between injector and detector, the magnon spin transport is studied. Using a circuit model based on the diffusion-relaxation transport theory, a similar magnon relaxation length of ~ 10 μm was extracted from both Pt and Ta devices. By changing the injector and detector material from Pt to Ta, the influence of interface properties on the magnon spin transport has been observed. For Ta devices on YIG the spin mixing conductance is reduced compared with Pt devices, which is quantitatively consistent when comparing the dependence of the nonlocal signal on the injector-detector distance with the prediction from the circuit model. △ Less

Submitted 30 March, 2018; originally announced March 2018.

Comments: 7 pages, 4 figures

Journal ref: J. Phys. D: Appl. Phys. 51, 224005 (2018)

Symmetry regimes for circular photocurrents in monolayer MoSe2

Authors: Jorge Quereda, Talieh S. Ghiasi, Jhih-Shih You, Jeroen van den Brink, Bart J. van Wees, Caspar H. van der Wal

Abstract: In monolayer transition metal dichalcogenides helicity-dependent charge and spin photocurrents can emerge, even without applying any electrical bias, due to circular photogalvanic and photon drag effects. Exploiting such circular photocurrents (CPC) in devices, however, requires better understanding of their behavior and physical origin. Here, we present symmetry, spectral, and electrical characte… ▽ More In monolayer transition metal dichalcogenides helicity-dependent charge and spin photocurrents can emerge, even without applying any electrical bias, due to circular photogalvanic and photon drag effects. Exploiting such circular photocurrents (CPC) in devices, however, requires better understanding of their behavior and physical origin. Here, we present symmetry, spectral, and electrical characteristics of CPC from excitonic interband transitions in a MoSe2 monolayer. The dependence on bias and gate voltages reveals two different CPC contributions, dominant at different voltages and with different dependence on illumination wavelength and incidence angles. We theoretically analyze symmetry requirements for effects that can yield CPC and compare these with the observed angular dependence and symmetries that occur for our device geometry. This reveals that the observed CPC effects require a reduced device symmetry, and that effects due to Berry curvature of the electronic states do not give a significant contribution. △ Less

Submitted 30 March, 2018; v1 submitted 22 March, 2018; originally announced March 2018.

Journal ref: Nature Communications volume 9, Article number: 3346 (2018)

Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives

Authors: Mallikarjuna Gurram, Siddhartha Omar, Bart J. van Wees

Abstract: The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexagonal boron nitride (hBN) has evolved as a crucial substrate, as an encapsulation layer, and as a tunnel barrier for manipulation and control of spin lifetimes and spin injection/detection polarizations in graphene spin… ▽ More The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexagonal boron nitride (hBN) has evolved as a crucial substrate, as an encapsulation layer, and as a tunnel barrier for manipulation and control of spin lifetimes and spin injection/detection polarizations in graphene spin valve devices. First, we give an overview of the challenges due to conventional SiO$_2$ substrate for spin transport in graphene followed by the progress made in hBN based graphene heterostructures. Then we discuss in detail the shortcomings and developments in using conventional oxide tunnel barriers for spin injection into graphene followed by introducing the recent advancements in using the crystalline single/bi/tri-layer hBN tunnel barriers for an improved spin injection and detection which also can facilitate two-terminal spin valve and Hanle measurements, at room temperature, and are of technological importance. A special case of bias induced spin polarization of contacts with exfoliated and chemical vapour deposition (CVD) grown hBN tunnel barriers is also discussed. Further, we give our perspectives on utilizing graphene-hBN heterostructures for future developments in graphene spintronics. △ Less

Submitted 21 December, 2017; originally announced December 2017.

Comments: Review, Author submitted manuscript - draft; 25 pages, 8 figures

Journal ref: 2D Materials 5, 032004 (2018)

A two-channel model for Spin-relaxation noise

Authors: Siddhartha Omar, Bart J. van Wees, Ivan J. Vera-Marun

Abstract: We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using the same model we also simulate the charge and spin- dependent 1/f noise, both in the local and nonlocal four-probe measurement schemes, and identify the noise… ▽ More We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using the same model we also simulate the charge and spin- dependent 1/f noise, both in the local and nonlocal four-probe measurement schemes, and identify the noise from the spin-relaxation resistances as the major source of spin-dependent 1/f noise. △ Less

Submitted 4 December, 2017; originally announced December 2017.

Comments: 6 figures, 7 pages

Journal ref: Phys. Rev. B 96, 235439 (2017)