-
Tuning the interlayer coupling in La0.7Sr0.3Mn0.95Ru0.05O3 / LaNiO3 multilayers with perpendicular magnetic anisotropy
Authors:
Jörg Schöpf,
Valentina Piva,
Paul H. M. van Loosdrecht,
Ionela Lindfors-Vrejoiu,
Padraic Shafar,
Divine P. Kumah,
Xuanyi Zhang,
Lide Yao,
Sebastian van Dijken
Abstract:
In ferromagnetic oxide epitaxial multilayers, magnetic properties and interlayer coupling are determined by a variety of factors. Beyond the contribution of interlayer exchange coupling, strain and interfacial effects, such as structural reconstructions or charge transfer, play significant roles, resulting in complex magnetic behaviour. In this study the interlayer coupling of ferromagnetic La0.7S…
▽ More
In ferromagnetic oxide epitaxial multilayers, magnetic properties and interlayer coupling are determined by a variety of factors. Beyond the contribution of interlayer exchange coupling, strain and interfacial effects, such as structural reconstructions or charge transfer, play significant roles, resulting in complex magnetic behaviour. In this study the interlayer coupling of ferromagnetic La0.7Sr0.3Mn0.95Ru0.05O3 (LSMRO) layers (8 nm thick) was investigated, when separated by epitaxial spacers of paramagnetic metallic LaNiO3 (LNO), in stacks exhibiting perpendicular magnetic anisotropy. By varying the thickness of the spacer, it was found that the coupling between two LSMRO layers changes from antiferromagnetic (with a 4 unit cell thick LNO spacer) to ferromagnetic (with a 6 unit cells thick LNO spacer). For multilayers comprising five LSMRO layers and a 4 unit cell thick LNO spacer, the antiferromagnetic coupling was preserved. However, the effective magnetic anisotropy changed, causing the magnetization to cant more towards the in-plane direction. This behavior was corroborated by X-ray magnetic circular dichroism (XMCD) investigations at the Mn and Ni L3-edges. The XMCD results indicated that the 4 unit cells thick LNO spacer in the multilayer become magnetically ordered, closely following the magnetization of adjacent LSMRO layers.
△ Less
Submitted 25 June, 2024;
originally announced June 2024.
-
Electric field control of RKKY coupling through solid-state ionics
Authors:
Maria Ameziane,
Roy Rosenkamp,
Lukáš Flajšman,
Sebastiaan van Dijken,
Rhodri Mansell
Abstract:
Placing a suitable spacer layer between two magnetic layers can lead to an interaction between the magnetic layers known as Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling. Controlling RKKY coupling, particularly the ability to switch between ferromagnetic and antiferromagnetic coupling, would enable novel magnetic data storage devices. By combining solid-state Li ion battery technology with an out-…
▽ More
Placing a suitable spacer layer between two magnetic layers can lead to an interaction between the magnetic layers known as Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling. Controlling RKKY coupling, particularly the ability to switch between ferromagnetic and antiferromagnetic coupling, would enable novel magnetic data storage devices. By combining solid-state Li ion battery technology with an out-of-plane magnetized Co/Pt-based stack coupled through a Ru interlayer we investigate the effects of the insertion of Li ions on the magnetic properties of the stack. The RKKY coupling and its voltage dependence is measured as a function of the Ru interlayer thickness, along with the effects of repeated voltage cycling. The Li ions both change the amplitude of the RKKY coupling and its phase, leading to the ability to switch the RKKY coupling between ferromagnetic and antiferromagnetic with applied voltages.
△ Less
Submitted 27 January, 2023;
originally announced January 2023.
-
Solid-state lithium-ion supercapacitor for voltage control of skyrmions
Authors:
Maria Ameziane,
Joonatan Huhtasalo,
Lukáš Flajšman,
Rhodri Mansell,
Sebastiaan van Dijken
Abstract:
Ionic control of magnetism gives rise to high magneto-electric coupling efficiencies at low voltages, which is essential for low-power magnetism-based non-conventional computing technologies. However, for on-chip applications, magneto-ionic devices typically suffer from slow kinetics, poor cyclability, impractical liquid architectures or strong ambient effects. As a route to overcoming these probl…
▽ More
Ionic control of magnetism gives rise to high magneto-electric coupling efficiencies at low voltages, which is essential for low-power magnetism-based non-conventional computing technologies. However, for on-chip applications, magneto-ionic devices typically suffer from slow kinetics, poor cyclability, impractical liquid architectures or strong ambient effects. As a route to overcoming these problems, we demonstrate an LiPON-based solid-state ionic supercapacitor with a magnetic Pt/Co$_{40}$Fe$_{40}$B$_{20}$/Pt thin-film electrode which enables voltage control of a magnetic skyrmion state. Skyrmion nucleation and annihilation are caused by Li ion accumulation and depletion at the magnetic interface under an applied voltage. The skyrmion density can be controlled through dc applied fields or through voltage pulses. The skyrmions are nucleated by single 60-$μ$s voltage pulses and devices are cycled 750,000 times without loss of electrical performance. Our results demonstrate a simple and robust approach to ionic control of magnetism in spin-based devices.
△ Less
Submitted 27 January, 2023;
originally announced January 2023.
-
Wideband Brillouin light scattering analysis of spin waves excited by a white-noise RF generator
Authors:
Lukáš Flajšman,
Ondřej Wojewoda,
Huajun Qin,
Kristýna Davídková,
Michal Urbánek,
Sebastiaan van Dijken
Abstract:
Spin waves are studied intensively for their intriguing properties and potential use in future technology platforms for the transfer and processing of information and microwave signals. The development of devices and materials for spin-wave systems requires a lot of measurement time and effort, and thus increasing the measurement throughput by extending the instrumentation capabilities is of the e…
▽ More
Spin waves are studied intensively for their intriguing properties and potential use in future technology platforms for the transfer and processing of information and microwave signals. The development of devices and materials for spin-wave systems requires a lot of measurement time and effort, and thus increasing the measurement throughput by extending the instrumentation capabilities is of the essence. In this letter, we report on a new and straightforward approach to increase the measurement throughput by fully exploiting the wideband detection nature of the Brillouin light scattering technique in single-shot experiments using a white-noise RF generator.
△ Less
Submitted 7 September, 2022;
originally announced September 2022.
-
Direct observation of a dynamical glass transition in a nanomagnetic artificial Hopfield network
Authors:
Michael Saccone,
Francesco Caravelli,
Kevin Hofhuis,
Sergii Parchenko,
Yorick A. Birkhölzer,
Scott Dhuey,
Armin Kleibert,
Sebastiaan van Dijken,
Cristiano Nisoli,
Alan Farhan
Abstract:
Spin glasses, generally defined as disordered systems with randomized competing interactions, are a widely investigated complex system. Theoretical models describing spin glasses are broadly used in other complex systems, such as those describing brain function, error-correcting codes, or stock-market dynamics. This wide interest in spin glasses provides strong motivation to generate an artificial…
▽ More
Spin glasses, generally defined as disordered systems with randomized competing interactions, are a widely investigated complex system. Theoretical models describing spin glasses are broadly used in other complex systems, such as those describing brain function, error-correcting codes, or stock-market dynamics. This wide interest in spin glasses provides strong motivation to generate an artificial spin glass within the framework of artificial spin ice systems. Here, we present the experimental realization of an artificial spin glass consisting of dipolar coupled single-domain Ising-type nanomagnets arranged onto an interaction network that replicates the aspects of a Hopfield neural network. Using cryogenic x-ray photoemission electron microscopy (XPEEM), we performed temperature-dependent imaging of thermally driven moment fluctuations within these networks and observed characteristic features of a two-dimensional Ising spin glass. Specifically, the temperature dependence of the spin glass correlation function follows a power law trend predicted from theoretical models on two-dimensional spin glasses. Furthermore, we observe clear signatures of the hard to observe rugged spin glass free energy in the form of sub-aging, out of equilibrium autocorrelations and a transition from stable to unstable dynamics.
△ Less
Submitted 4 February, 2022;
originally announced February 2022.
-
Roadmap on Spin-Wave Computing
Authors:
A. V. Chumak,
P. Kabos,
M. Wu,
C. Abert,
C. Adelmann,
A. Adeyeye,
J. Åkerman,
F. G. Aliev,
A. Anane,
A. Awad,
C. H. Back,
A. Barman,
G. E. W. Bauer,
M. Becherer,
E. N. Beginin,
V. A. S. V. Bittencourt,
Y. M. Blanter,
P. Bortolotti,
I. Boventer,
D. A. Bozhko,
S. A. Bunyaev,
J. J. Carmiggelt,
R. R. Cheenikundil,
F. Ciubotaru,
S. Cotofana
, et al. (91 additional authors not shown)
Abstract:
Magnonics is a field of science that addresses the physical properties of spin waves and utilizes them for data processing. Scalability down to atomic dimensions, operations in the GHz-to-THz frequency range, utilization of nonlinear and nonreciprocal phenomena, and compatibility with CMOS are just a few of many advantages offered by magnons. Although magnonics is still primarily positioned in the…
▽ More
Magnonics is a field of science that addresses the physical properties of spin waves and utilizes them for data processing. Scalability down to atomic dimensions, operations in the GHz-to-THz frequency range, utilization of nonlinear and nonreciprocal phenomena, and compatibility with CMOS are just a few of many advantages offered by magnons. Although magnonics is still primarily positioned in the academic domain, the scientific and technological challenges of the field are being extensively investigated, and many proof-of-concept prototypes have already been realized in laboratories. This roadmap is a product of the collective work of many authors that covers versatile spin-wave computing approaches, conceptual building blocks, and underlying physical phenomena. In particular, the roadmap discusses the computation operations with Boolean digital data, unconventional approaches like neuromorphic computing, and the progress towards magnon-based quantum computing. The article is organized as a collection of sub-sections grouped into seven large thematic sections. Each sub-section is prepared by one or a group of authors and concludes with a brief description of the current challenges and the outlook of the further development of the research directions.
△ Less
Submitted 30 October, 2021;
originally announced November 2021.
-
Thermal motion of skyrmion arrays in granular films
Authors:
Yifan Zhou,
Rhodri Mansell,
Tapio Ala-Nissila,
Sebastiaan van Dijken
Abstract:
Magnetic skyrmions are topologically-distinct swirls of magnetic moments which display particle-like behaviour, including the ability to undergo thermally-driven diffusion. In this paper we study the thermally activated motion of arrays of skyrmions using temperature dependent micromagnetic simulations where the skyrmions form spontaneously. In particular, we study the interaction of skyrmions wit…
▽ More
Magnetic skyrmions are topologically-distinct swirls of magnetic moments which display particle-like behaviour, including the ability to undergo thermally-driven diffusion. In this paper we study the thermally activated motion of arrays of skyrmions using temperature dependent micromagnetic simulations where the skyrmions form spontaneously. In particular, we study the interaction of skyrmions with grain boundaries, which are a typical feature of sputtered ultrathin films used in experimental devices. We find the interactions lead to two distinct regimes. For longer lag times the grains lead to a reduction in the diffusion coefficient, which is strongest for grain sizes similar to the skyrmion diameter. At shorter lag times the presence of grains enhances the effective diffusion coefficient due to the gyrotropic motion of the skyrmions induced by their interactions with grain boundaries. For grain sizes significantly larger than the skyrmion diameter clustering of the skyrmions occurs in grains with lower magnetic anisotropy.
△ Less
Submitted 18 March, 2021;
originally announced March 2021.
-
Voltage control of skyrmions: creation, annihilation and zero-magnetic field stablization
Authors:
Yifan Zhou,
Rhodri Mansell,
Sebastiaan van Dijken
Abstract:
Voltage manipulation of skyrmions is a promising path towards low-energy spintronic devices. Here, voltage effects on skyrmions in a GdOx/Gd/Co/Pt heterostructure are observed experimentally. The results show that the skyrmion density can be both enhanced and depleted by the application of an electric field, along with the ability, at certain magnetic fields to completely switch the skyrmion state…
▽ More
Voltage manipulation of skyrmions is a promising path towards low-energy spintronic devices. Here, voltage effects on skyrmions in a GdOx/Gd/Co/Pt heterostructure are observed experimentally. The results show that the skyrmion density can be both enhanced and depleted by the application of an electric field, along with the ability, at certain magnetic fields to completely switch the skyrmion state on and off. Further, a zero magnetic field skyrmion state can be stablized under a negative bias voltage using a defined voltage and magnetic field sequence. The voltage effects measured here occur on a few-second timescale, suggesting an origin in voltage-controlled magnetic anisotropy rather than ionic effects. By investigating the skyrmion nucleation rate as a function of temperature, we extract the energy barrier to skyrmion nucleation in our sample. Further, micromagnetic simulations are used to explore the effect of changing the anisotropy and Dzyaloshinskii-Moriya interaction on skyrmion density. Our work demonstrates the control of skyrmions by voltages, showing functionalities desirable for commercial devices.
△ Less
Submitted 18 February, 2021;
originally announced February 2021.
-
Electronic and magnetic characterization of epitaxial CrBr$_3$ monolayers
Authors:
Shawulienu Kezilebieke,
Orlando J. Silveira,
Md N. Huda,
Viliam Vaňo,
Markus Aapro,
Somesh Chandra Ganguli,
Jouko Lahtinen,
Rhodri Mansell,
Sebastiaan van Dijken,
Adam S. Foster,
Peter Liljeroth
Abstract:
The ability to imprint a given material property to another through proximity effect in layered two-dimensional materials has opened the way to the creation of designer materials. Here, we use molecular-beam epitaxy (MBE) for a direct synthesis of a superconductor-magnet hybrid heterostructure by combining superconducting niobium diselenide (NbSe$_2$) with the monolayer ferromagnetic chromium trib…
▽ More
The ability to imprint a given material property to another through proximity effect in layered two-dimensional materials has opened the way to the creation of designer materials. Here, we use molecular-beam epitaxy (MBE) for a direct synthesis of a superconductor-magnet hybrid heterostructure by combining superconducting niobium diselenide (NbSe$_2$) with the monolayer ferromagnetic chromium tribromide (CrBr$_3$). Using different characterization techniques and density-functional theory (DFT) calculations, we have confirmed that the CrBr$_3$ monolayer retains its ferromagnetic ordering with a magnetocrystalline anisotropy favoring an out-of-plane spin orientation. Low-temperature scanning tunneling microscopy (STM) measurements show a slight reduction of the superconducting gap of NbSe$_2$ and the formation of a vortex lattice on the CrBr$_3$ layer in experiments under an external magnetic field. Our results contribute to the broader framework of exploiting proximity effects to realize novel phenomena in 2D heterostructures.
△ Less
Submitted 28 September, 2020;
originally announced September 2020.
-
Laser-induced magnetization precession in individual magnetoelastic domains of a multiferroic CoFeB/BaTiO$_3$ composite
Authors:
L. A. Shelukhin,
N. A. Pertsev,
A. V. Scherbakov,
D. L. Kazenwadel,
D. A. Kirilenko,
S. J. Hämäläinen,
S. van Dijken,
A. M. Kalashnikova
Abstract:
Using a magneto-optical pump-probe technique with micrometer spatial resolution we show that magnetization precession can be launched in individual magnetic domains imprinted in a Co$_{40}$Fe$_{40}$B$_{20}$ (CoFeB) layer by elastic coupling to ferroelectric domains in a BaTiO$_{3}$ substrate. The dependence of the precession parameters on external magnetic field strength and orientation reveal tha…
▽ More
Using a magneto-optical pump-probe technique with micrometer spatial resolution we show that magnetization precession can be launched in individual magnetic domains imprinted in a Co$_{40}$Fe$_{40}$B$_{20}$ (CoFeB) layer by elastic coupling to ferroelectric domains in a BaTiO$_{3}$ substrate. The dependence of the precession parameters on external magnetic field strength and orientation reveal that by laser-induced ultrafast partial quenching of the magnetoelastic coupling parameter of CoFeB by $\approx$27% along with 10% ultrafast demagnetization trigger the magnetization precession. The relation between the laser-induced reduction of the magnetoelastic coupling and the demagnetization is approximated by the $n(n+1)/2$-law with n$\approx$2. This correspondence confirms the thermal origin of the laser-induced anisotropy change. Based on the analysis and modeling of the excited precession we find signatures of laser-induced precessional switching, which occurs when the magnetic field is applied along the hard magnetization axis and its value is close to the effective magnetoelastic anisotropy field. The precession excitation process in an individual magnetoelastic domain is found to be unaffected by neighboring domains. This makes laser-induced changes of magnetoelastic anisotropy a promising tool for driving magnetization dynamics and switching in composite multiferroics with spatial selectivity.
△ Less
Submitted 21 October, 2020; v1 submitted 7 April, 2020;
originally announced April 2020.
-
Magnetoplasmonic properties of perpendicularly magnetized $[$Co/Pt$]_{N}$ nanodots
Authors:
Francisco Freire-Fernández,
Rhodri Mansell,
Sebastiaan van Dijken
Abstract:
We demonstrate a ten-fold resonant enhancement of magneto-optical effects in perpendicularly magnetized $[$Co/Pt$]_{N}$ nanodots mediated by the excitation of optimized plasmon modes. Two magnetoplasmonic systems are considered; square arrays of $[$Co/Pt$]_{N}$ nanodots on glass and identical arrays on a Au/SiO2 bilayer. On glass, the optical and magneto-optical spectra of the nanodot arrays are d…
▽ More
We demonstrate a ten-fold resonant enhancement of magneto-optical effects in perpendicularly magnetized $[$Co/Pt$]_{N}$ nanodots mediated by the excitation of optimized plasmon modes. Two magnetoplasmonic systems are considered; square arrays of $[$Co/Pt$]_{N}$ nanodots on glass and identical arrays on a Au/SiO2 bilayer. On glass, the optical and magneto-optical spectra of the nanodot arrays are dominated by the excitation of a surface lattice resonance (SLR), whereas on Au/SiO${}_{2}$, a narrow surface plasmon polariton (SPP) resonance tailors the spectra further. Both the SLR and SPP modes are magneto-optically active leading to an enhancement of the Kerr angle. We detail the dependence of optical and magneto-optical spectra on the number of Co/Pt bilayer repetitions, the nanodot diameter, and the array period, offering design rules on how to maximize and spectrally tune the magneto-optical response of perpendicularly magnetized $[$Co/Pt$]_{N}$ nanodots.
△ Less
Submitted 15 November, 2019;
originally announced November 2019.
-
Reversible Thermal Strain Control of Oxygen Vacancy Ordering in an Epitaxial La$_{0.5}$Sr$_{0.5}$CoO$_{3-δ}$ Film
Authors:
Sampo Inkinen,
Lide Yao,
Sebastiaan van Dijken
Abstract:
Reversible topotactic transitions between oxygen-vacancy-ordered structures in transition metal oxides provide a promising strategy for active manipulation of material properties. While transformations between various oxygen-deficient phases have been attained in bulk ABO$_{3-δ}$ perovskites, substrate clam** restricts the formation of distinct ordering patterns in epitaxial films. Using in-situ…
▽ More
Reversible topotactic transitions between oxygen-vacancy-ordered structures in transition metal oxides provide a promising strategy for active manipulation of material properties. While transformations between various oxygen-deficient phases have been attained in bulk ABO$_{3-δ}$ perovskites, substrate clam** restricts the formation of distinct ordering patterns in epitaxial films. Using in-situ scanning transmission electron microscopy (STEM), we image a thermally driven reversible transition in La$_{0.5}$Sr$_{0.5}$CoO$_{3-δ}$ films on SrTiO$_3$ from a multidomain brownmillerite (BM) structure to a uniform phase wherein oxygen vacancies order in every third CoO$_x$ plane. Because temperature cycling is performed over a limited temperature range (25 °C - 385 °C), the oxygen deficiency parameter $δ$ does not vary measurably. Under constant $δ$, the topotactic transition proceeds via local reordering of oxygen vacancies driven by thermal strain. Atomic-resolution imaging reveals a two-step process whereby alternating vertically and horizontally oriented BM domains first scale in size to accommodate the strain induced by different thermal expansions of La$_{0.5}$Sr$_{0.5}$CoO$_{3-δ}$ and SrTiO$_3$, before the new phase nucleates and quickly grows above 360 °C. Upon cooling, the film transform back to the mixed BM phase. As the structural transition is fully reversible and $δ$ does not change upon temperature cycling, we rule out electron-beam irradiation during STEM as the driving mechanism. Instead, our findings demonstrate that thermal strain can solely drive topotactic phase transitions in perovskite oxide films, presenting opportunities for switchable ionic devices.
△ Less
Submitted 6 November, 2019; v1 submitted 2 October, 2019;
originally announced October 2019.
-
Electronic and Magnetic Characterization of Epitaxial VSe$_2$ Monolayers on Superconducting NbSe$_2$
Authors:
Shawulienu Kezilebieke,
Md Nurul Huda,
Paul Dreher,
Ilkka Manninen,
Yifan Zhou,
Jani Sainio,
Rhodri Mansell,
Miguel M. Ugeda,
Sebastiaan van Dijken,
Hannu-Pekka Komsa,
Peter Liljeroth
Abstract:
Vertical integration of two-dimensional (2D) van der Waals (vdW) materials with different quantum ground states is predicted to lead to novel electronic properties that are not found in the constituent layers. Here, we present the direct synthesis of superconductor-magnet hybrid heterostructures by combining superconducting niobium diselenide (NbSe$_2$) with the monolayer (ML) vanadium diselenide…
▽ More
Vertical integration of two-dimensional (2D) van der Waals (vdW) materials with different quantum ground states is predicted to lead to novel electronic properties that are not found in the constituent layers. Here, we present the direct synthesis of superconductor-magnet hybrid heterostructures by combining superconducting niobium diselenide (NbSe$_2$) with the monolayer (ML) vanadium diselenide (VSe$_2$). More significantly, the in-situ growth in ultra-high vacuum (UHV) allows to produce a clean and an atomically sharp interfaces. Combining different characterization techniques and density-functional theory (DFT) calculations, we investigate the electronic and magnetic properties of VSe$_2$ on NbSe$_2$. Low temperature scanning tunneling microscopy (STM) measurements demonstrate a reduction of the superconducting gap on VSe$_2$ layer. This together with the lack of charge density wave signatures indicates magnetization of the sheet, but not of a conventional itinerant ferromagnet.
△ Less
Submitted 12 November, 2019; v1 submitted 23 September, 2019;
originally announced September 2019.
-
Unconventional Ferroelectric Switching via Local Domain Wall Motion in Multiferroic $ε$-Fe2O3 Films
Authors:
Xiangxiang Guan,
Lide Yao,
Konstantin Z. Rushchanskii,
Sampo Inkinen,
Richeng Yu,
Marjana Ležaić,
Florencio Sánchez,
Martí Gich,
Sebastiaan van Dijken
Abstract:
Deterministic polarization reversal in ferroelectric and multiferroic films is critical for their exploitation in nanoelectronic devices. While ferroelectricity has been studied for nearly a century, major discrepancies in the reported values of coercive fields and saturation polarization persist in literature for many materials. This raises questions about the atomic-scale mechanisms behind polar…
▽ More
Deterministic polarization reversal in ferroelectric and multiferroic films is critical for their exploitation in nanoelectronic devices. While ferroelectricity has been studied for nearly a century, major discrepancies in the reported values of coercive fields and saturation polarization persist in literature for many materials. This raises questions about the atomic-scale mechanisms behind polarization reversal. Unconventional ferroelectric switching in $ε$-Fe2O3 films, a material that combines ferrimagnetism and ferroelectricity at room temperature, is reported here. High-resolution in-situ scanning transmission electron microscopy (STEM) experiments and first-principles calculations demonstrate that polarization reversal in $ε$-Fe2O3 occurs around pre-existing domain walls only, triggering local domain wall motion in moderate electric fields of 250 - 500 kV/cm. Calculations indicate that the activation barrier for switching at domain walls is nearly a quarter of that corresponding to the most likely transition paths inside $ε$-Fe2O3 domains. Moreover, domain walls provide symmetry lowering, which is shown to be necessary for ferroelectric switching. Local polarization reversal in $ε$-Fe2O3 limits the macroscopic ferroelectric response and offers important hints on how to tailor ferroelectric properties by domain structure design in other relevant ferroelectric materials.
△ Less
Submitted 26 August, 2019;
originally announced August 2019.
-
Propagating spin waves in nanometer-thick yttrium iron garnet films: Dependence on wave vector, magnetic field strength and angle
Authors:
Huajun Qin,
Sampo J. Hämäläinen,
Kristian Arjas,
Jorn Witteveen,
Sebastiaan van Dijken
Abstract:
We present a comprehensive investigation of propagating spin waves in nanometer-thick yttrium iron garnet (YIG) films. We use broadband spin-wave spectroscopy with integrated coplanar waveguides (CPWs) and microstrip antennas on top of continuous and patterned YIG films to characterize spin waves with wave vectors up to 10 rad/$μ$m. All films are grown by pulsed laser deposition. From spin-wave tr…
▽ More
We present a comprehensive investigation of propagating spin waves in nanometer-thick yttrium iron garnet (YIG) films. We use broadband spin-wave spectroscopy with integrated coplanar waveguides (CPWs) and microstrip antennas on top of continuous and patterned YIG films to characterize spin waves with wave vectors up to 10 rad/$μ$m. All films are grown by pulsed laser deposition. From spin-wave transmission spectra, parameters such as the Gilbert dam** constant, spin-wave dispersion relation, group velocity, relaxation time, and decay length are derived and their dependence on magnetic bias field strength and angle is systematically gauged. For a 40-nm-thick YIG film, we obtain a dam** constant of $3.5 \times 10^{-4}$ and a maximum decay length of 1.2 mm. Our experiments reveal a strong variation of spin-wave parameters with magnetic bias field and wave vector. Spin-wave properties change considerably up to a magnetic bias field of about 30 mT and above a field angle of $θ_{H} = 20^{\circ}$, where $θ_{H} = 0^{\circ}$ corresponds to the Damon-Eshbach configuration.
△ Less
Submitted 11 October, 2018;
originally announced October 2018.
-
Programmable control of spin-wave transmission in a domain-wall spin valve
Authors:
Sampo J. Hämäläinen,
Marco Madami,
Huajun Qin,
Gianluca Gubbiotti,
Sebastiaan van Dijken
Abstract:
Active manipulation of spin waves is essential for the development of magnon-based technologies. Here, we demonstrate programmable spin-wave filtering by resetting the spin structure of a pinned 90$^\circ$ Néel domain wall in a continuous CoFeB film with abrupt rotations of uniaxial magnetic anisotropy. Using phase-resolved micro-focused Brillouin light scattering and micromagnetic simulations, we…
▽ More
Active manipulation of spin waves is essential for the development of magnon-based technologies. Here, we demonstrate programmable spin-wave filtering by resetting the spin structure of a pinned 90$^\circ$ Néel domain wall in a continuous CoFeB film with abrupt rotations of uniaxial magnetic anisotropy. Using phase-resolved micro-focused Brillouin light scattering and micromagnetic simulations, we show that broad 90$^\circ$ head-to-head or tail-to-tail magnetic domain walls are transparent to spin waves over a broad frequency range. In contrast, magnetic switching to a 90$^\circ$ head-to-tail configuration produces much narrower domain walls at the same pinning locations. Spin waves are strongly reflected by a resonance mode in these magnetic domain walls. Based on these results, we propose a magnetic spin-wave valve with two parallel domain walls. Switching the spin-wave valve from an open to a close state changes the transmission of spin waves from nearly 100% to 0% at the resonance frequency. This active control over spin-wave transport could be utilized in magnonic logic devices or non-volatile memory elements.
△ Less
Submitted 9 May, 2018;
originally announced May 2018.
-
Static properties and current-induced dynamics of pinned $90$ degree magnetic domain walls under applied fields: an analytic approach
Authors:
Pavel Baláž,
Sampo J. Hämäläinen,
Sebastiaan van Dijken
Abstract:
Magnetic domain walls are pinned strongly by abrupt changes in magnetic anisotropy. When driven into oscillation by a spin-polarized current, locally pinned domain walls can be exploited as tunable sources of short-wavelength spin waves. Here, we develop an analytical framework and discrete Heisenberg model to describe the static and dynamic properties of pinned domain walls with a head-to-tail ma…
▽ More
Magnetic domain walls are pinned strongly by abrupt changes in magnetic anisotropy. When driven into oscillation by a spin-polarized current, locally pinned domain walls can be exploited as tunable sources of short-wavelength spin waves. Here, we develop an analytical framework and discrete Heisenberg model to describe the static and dynamic properties of pinned domain walls with a head-to-tail magnetic structure. We focus on magnetic domain walls that are pinned by 90$^\circ$ rotations of uniaxial magnetic anisotropy. Our model captures the domain wall response to a spin-transfer torque that is exerted by an electric current. Model predictions of the domain wall resonance frequency and its evolution with magnetic anisotropy strength and external magnetic field are compared to micromagnetic simulations.
△ Less
Submitted 31 July, 2018; v1 submitted 19 February, 2018;
originally announced February 2018.
-
Exchange-torque-induced excitation of perpendicular standing spin waves in nanometer-thick YIG films
Authors:
Huajun Qin,
Sampo J. Hämäläinen,
Sebastiaan van Dijken
Abstract:
Spin waves in ferrimagnetic yttrium iron garnet (YIG) films with ultralow magnetic dam** are relevant for magnon-based spintronics and low-power wave-like computing. The excitation frequency of spin waves in YIG is rather low in weak external magnetic fields because of its small saturation magnetization, which limits the potential of YIG films for high-frequency applications. Here, we demonstrat…
▽ More
Spin waves in ferrimagnetic yttrium iron garnet (YIG) films with ultralow magnetic dam** are relevant for magnon-based spintronics and low-power wave-like computing. The excitation frequency of spin waves in YIG is rather low in weak external magnetic fields because of its small saturation magnetization, which limits the potential of YIG films for high-frequency applications. Here, we demonstrate how exchange-coupling to a CoFeB film enables efficient excitation of high-frequency perpendicular standing spin waves (PSSWs) in nanometer-thick (80 nm and 295 nm) YIG films using uniform microwave magnetic fields. In the 295-nm-thick YIG film, we measure intense PSSW modes up to 10th order. Strong hybridization between the PSSW modes and the ferromagnetic resonance mode of CoFeB leads to characteristic anti-crossing behavior in broadband spin-wave spectra. A dynamic exchange torque at the YIG/CoFeB interface explains the excitation of PSSWs. The localized torque originates from exchange coupling between two dissimilar magnetization precessions in the YIG and CoFeB layers. As a consequence, spin waves are emitted from the YIG/CoFeB interface and PSSWs form when their wave vector matches the perpendicular confinement condition. PSSWs are not excited when the exchange coupling between YIG and CoFeB is suppressed by a Ta spacer layer. Micromagnetic simulations confirm the exchange-torque mechanism.
△ Less
Submitted 21 December, 2017;
originally announced December 2017.
-
Plasmon-induced demagnetization and magnetic switching in nickel nanoparticle arrays
Authors:
Mikko Kataja,
Francisco Freire-Fernandez,
Jorn P. Witteveen,
Tommi Hakala,
Päivi Törmä,
Sebastiaan van Dijken
Abstract:
We report on the manipulation of magnetization by femtosecond laser pulses in a periodic array of cylindrical nickel nanoparticles. By performing experiments at different wavelength, we show that the excitation of collective surface plasmon resonances triggers demagnetization in zero field or magnetic switching in a small perpendicular field. Both magnetic effects are explained by plasmon-induced…
▽ More
We report on the manipulation of magnetization by femtosecond laser pulses in a periodic array of cylindrical nickel nanoparticles. By performing experiments at different wavelength, we show that the excitation of collective surface plasmon resonances triggers demagnetization in zero field or magnetic switching in a small perpendicular field. Both magnetic effects are explained by plasmon-induced heating of the nickel nanoparticles to their Curie temperature. Model calculations confirm the strong correlation between the excitation of surface plasmon modes and laser-induced changes in magnetization.
△ Less
Submitted 8 November, 2017;
originally announced November 2017.
-
Influence of magnetic field and ferromagnetic film thickness on domain pattern transfer in multiferroic heterostructures
Authors:
Diego López González,
Arianna Casiraghi,
Florian Kronast,
Kévin J. A. Franke,
Sebastiaan van Dijken
Abstract:
Domains in BaTiO$_3$ induces a regular modulation of uniaxial magnetic anisotropy in CoFeB via an inverse magnetostriction effect. As a result, the domain structures of the CoFeB wedge film and BaTiO$_3$ substrate correlate fully and straight ferroelectric domain boundaries in BaTiO$_3$ pin magnetic domain walls in CoFeB. We use x-ray photoemission electron microscopy and magneto-optical Kerr effe…
▽ More
Domains in BaTiO$_3$ induces a regular modulation of uniaxial magnetic anisotropy in CoFeB via an inverse magnetostriction effect. As a result, the domain structures of the CoFeB wedge film and BaTiO$_3$ substrate correlate fully and straight ferroelectric domain boundaries in BaTiO$_3$ pin magnetic domain walls in CoFeB. We use x-ray photoemission electron microscopy and magneto-optical Kerr effect microscopy to characterize the spin structure of the pinned domain walls. In a rotating magnetic field, abrupt and reversible transitions between two domain wall types occur, namely, narrow walls where the magnetization vectors align head-to-tail and much broader walls with alternating head-to-head and tail-to-tail magnetization configurations. We characterize variations of the domain wall spin structure as a function of magnetic field strength and CoFeB film thickness and compare the experimental results with micromagnetic simulations.
△ Less
Submitted 21 March, 2017;
originally announced March 2017.
-
Electric-field-driven domain wall dynamics in perpendicularly magnetized multilayers
Authors:
Diego López González,
Yasuhiro Shirahata,
Ben Van de Wiele,
Kévin J. A. Franke,
Arianna Casiraghi,
Tomoyasu Taniyama,
Sebastiaan van Dijken
Abstract:
We report on reversible electric-field-driven magnetic domain wall motion in a Cu/Ni multilayer on a ferroelectric BaTiO$_3$ substrate. In our heterostructure, strain-coupling to ferroelastic domains with in-plane and perpendicular polarization in the BaTiO$_3$ substrate causes the formation of domains with perpendicular and in-plane magnetic anisotropy, respectively, in the Cu/Ni multilayer. Wall…
▽ More
We report on reversible electric-field-driven magnetic domain wall motion in a Cu/Ni multilayer on a ferroelectric BaTiO$_3$ substrate. In our heterostructure, strain-coupling to ferroelastic domains with in-plane and perpendicular polarization in the BaTiO$_3$ substrate causes the formation of domains with perpendicular and in-plane magnetic anisotropy, respectively, in the Cu/Ni multilayer. Walls that separate magnetic domains are elastically pinned onto ferroelectric domain walls. Using magneto-optical Kerr effect microscopy, we demonstrate that out-of-plane electric field pulses across the BaTiO$_3$ substrate move the magnetic and ferroelectric domain walls in unison. Our experiments indicate an exponential increase of domain wall velocity with electric field strength and opposite domain wall motion for positive and negative field pulses. Magnetic fields do not affect the velocity of magnetic domain walls, but independently tailor their internal spin structure, causing a change in domain wall dynamics at high velocities.
△ Less
Submitted 12 February, 2017;
originally announced February 2017.
-
Influence of intermixing at the Ta/CoFeB interface on spin Hall angle in Ta/CoFeB/MgO heterostructures
Authors:
Monika Cecot,
Lukasz Karwacki,
Witold Skowronski,
Jaroslaw Kanak,
Jerzy Wrona,
Antoni Zywczak,
Lide Yao,
Sebastiaan van Dijken,
Jozef Barnas,
Tomasz Stobiecki
Abstract:
We investigate the spin Hall effect in perpendicularly magnetized Ta/Co40Fe40B20/MgO trilayers with Ta underlayers thicker than the spin diffusion length. The crystallographic structures of the Ta layer and Ta/CoFeB interface are examined in detail using X-ray diffraction and transmission electron microscopy. The thinnest Ta underlayer is amorphous, whereas for thicker Ta layers a disoriented tetr…
▽ More
We investigate the spin Hall effect in perpendicularly magnetized Ta/Co40Fe40B20/MgO trilayers with Ta underlayers thicker than the spin diffusion length. The crystallographic structures of the Ta layer and Ta/CoFeB interface are examined in detail using X-ray diffraction and transmission electron microscopy. The thinnest Ta underlayer is amorphous, whereas for thicker Ta layers a disoriented tetragonal beta-phase appears. Effective spin-orbit torques are calculated based on harmonic Hall voltage measurements performed in a temperature range between 15 and 300 K. To account for the temperature dependence of dam**-like and field-like torques, we extend the spin diffusion model by including an additional contribution from the Ta/CoFeB interface. Based on this approach, the temperature dependence of the spin Hall angle in the Ta underlayer and at Ta/CoFeB interface are determined separately. The results indicate an almost temperature-independent spin Hall angle of theta_SH-N = -0.2 in Ta and a strongly temperature-dependent theta_SH-I for the intermixed Ta/CoFeB interface.
△ Less
Submitted 9 December, 2016;
originally announced December 2016.
-
Electric-field tunable spin diode FMR in patterned PMN-PT/NiFe structures
Authors:
Sławomir Ziętek,
Piotr Ogrodnik,
Witold Skowroński,
Feliks Stobiecki,
Sebastiaan van Dijken,
Józef Barnaś,
Tomasz Stobiecki
Abstract:
Dynamic properties of NiFe thin films on PMN-PT piezoelectric substrate are investigated using the spin-diode method. Ferromagnetic resonance (FMR) spectra of microstrips with varying width are measured as a function of magnetic field and frequency. The FMR frequency is shown to depend on the electric field applied across the substrate, which induces strain in the NiFe layer. Electric field tunabi…
▽ More
Dynamic properties of NiFe thin films on PMN-PT piezoelectric substrate are investigated using the spin-diode method. Ferromagnetic resonance (FMR) spectra of microstrips with varying width are measured as a function of magnetic field and frequency. The FMR frequency is shown to depend on the electric field applied across the substrate, which induces strain in the NiFe layer. Electric field tunability of up to 100 MHz per 1 kV/cm is achieved. An analytical model based on total energy minimization and the LLG equation, with magnetostriction effect taken into account, is developed to explain the measured dynamics. Based on this model, conditions for strong electric-field tunable spin diode FMR in patterned NiFe/PMN-PT structures are derived.
△ Less
Submitted 19 May, 2016;
originally announced May 2016.
-
Temperature dependence of spin-orbit torques in W/CoFeB bilayers
Authors:
Witold Skowronski,
Monika Cecot,
Jaroslaw Kanak,
Slawomir Zietek,
Tomasz Stobiecki,
Lide Yao,
Sebastiaan van Dijken,
Takayuki Nozaki,
Kay Yakushiji,
Shinji Yuasa
Abstract:
We report on the temperature and layer thickness variation of spin-orbit torques in perpendicularly magnetized W/CoFeB bilayers. Harmonic Hall voltage measurements reveal dissimilar temperature evolutions of longitudinal and transverse effective magnetic field components. The transverse effective field changes sign at 250 K for a 2 nm thick W buffer layer, indicating a much stronger contribution f…
▽ More
We report on the temperature and layer thickness variation of spin-orbit torques in perpendicularly magnetized W/CoFeB bilayers. Harmonic Hall voltage measurements reveal dissimilar temperature evolutions of longitudinal and transverse effective magnetic field components. The transverse effective field changes sign at 250 K for a 2 nm thick W buffer layer, indicating a much stronger contribution from interface spin-orbit interactions compared to, for example, Ta. Transmission electron microscopy measurements reveal that considerable interface mixing between W and CoFeB is primarily responsible for this effect.
△ Less
Submitted 18 April, 2016;
originally announced April 2016.
-
Influence of elastically pinned magnetic domain walls on magnetization reversal in multiferroic heterostructures
Authors:
Arianna Casiraghi,
Teresa Rincón Domínguez,
Stefan Rößler,
Kévin J. A. Franke,
Diego López González,
Sampo J. Hämäläinen,
Robert Frömter,
Hans Peter Oepen,
Sebastiaan van Dijken
Abstract:
In elastically coupled multiferroic heterostructures that exhibit full domain correlations between ferroelectric and ferromagnetic sub-systems, magnetic domain walls are firmly pinned on top of ferroelectric domain boundaries. In this work we investigate the influence of pinned magnetic domain walls on the magnetization reversal process in a Co40Fe40B20 wedge film that is coupled to a ferroelectri…
▽ More
In elastically coupled multiferroic heterostructures that exhibit full domain correlations between ferroelectric and ferromagnetic sub-systems, magnetic domain walls are firmly pinned on top of ferroelectric domain boundaries. In this work we investigate the influence of pinned magnetic domain walls on the magnetization reversal process in a Co40Fe40B20 wedge film that is coupled to a ferroelectric BaTiO3 substrate via interface strain transfer. We show that the magnetic field direction can be used to select between two distinct magnetization reversal mechanisms, namely (1) double switching events involving alternate stripe domains at a time or (2) synchronized switching of all domains. Furthermore, scaling of the switching fields with domain width and film thickness is also found to depend on field orientation. These results are explained by considering the dissimilar energies of the two types of pinned magnetic domain walls that are formed in the system.
△ Less
Submitted 11 March, 2015;
originally announced March 2015.
-
Reversible Electric-Field Driven Magnetic Domain Wall Motion
Authors:
Kévin J. A. Franke,
Ben Van de Wiele,
Yasuhiro Shirahata,
Sampo J. Hämäläinen,
Tomoyasu Taniyama,
Sebastiaan van Dijken
Abstract:
Control of magnetic domain wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain wall motion in an applied electric field without the concurrent use of a magnetic field or spin-polarized electric current. The mechanism is based on elastic c…
▽ More
Control of magnetic domain wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain wall motion in an applied electric field without the concurrent use of a magnetic field or spin-polarized electric current. The mechanism is based on elastic coupling between magnetic and ferroelectric domain walls in multiferroic heterostructures. Pure electric-field driven magnetic domain wall motion is demonstrated for epitaxial Fe films on BaTiO$_3$ with in-plane and out-of-plane polarized domains. In this system, magnetic domain wall motion is fully reversible and the velocity of the walls varies exponentially as a function of out-of-plane electric field strength.
△ Less
Submitted 25 November, 2014;
originally announced November 2014.
-
Magneto-ionic Control of Interfacial Magnetism
Authors:
Uwe Bauer,
Lide Yao,
Satoru Emori,
Harry L. Tuller,
Sebastiaan van Dijken,
Geoffrey S. D. Beach
Abstract:
In metal/oxide heterostructures, rich chemical, electronic, magnetic and mechanical properties can emerge from interfacial chemistry and structure. The possibility to dynamically control interface characteristics with an electric field paves the way towards voltage control of these properties in solid-state devices. Here we show that electrical switching of the interfacial oxidation state allows f…
▽ More
In metal/oxide heterostructures, rich chemical, electronic, magnetic and mechanical properties can emerge from interfacial chemistry and structure. The possibility to dynamically control interface characteristics with an electric field paves the way towards voltage control of these properties in solid-state devices. Here we show that electrical switching of the interfacial oxidation state allows for voltage control of magnetic properties to an extent never before achieved through conventional magnetoelectric coupling mechanisms. We directly observe, for the first time, in situ voltage driven O$^{2-}$ migration in a Co/metal-oxide bilayer, which we use to toggle the interfacial magnetic anisotropy energy by >0.6 erg/cm$^2$. We exploit the thermally-activated nature of ion migration to dramatically increase the switching efficiency and to demonstrate reversible patterning of magnetic properties through local activation of ionic migration. These results suggest a path towards voltage-programmable materials based on solid-state switching of interface oxygen chemistry.
△ Less
Submitted 5 September, 2014;
originally announced September 2014.
-
Characterization of aluminum oxide tunnel barriers by combining transport measurements and transmission electron microscope imaging
Authors:
T. Aref,
A. Averin,
S. van Dijken,
A. Ferring,
M. Koberidze,
V. F. Maisi,
H. Nguyen,
R. M. Nieminen,
J. P. Pekola,
L. D. Yao
Abstract:
We present two approaches for studying the uniformity of a tunnel barrier. The first approach is based on measuring single-electron and two-electron tunneling in a hybrid single-electron transistor. Our measurements indicate that the effective area of a conduction channel is about one order of magnitude larger than predicted by theoretical calculations. With the second method, transmission electro…
▽ More
We present two approaches for studying the uniformity of a tunnel barrier. The first approach is based on measuring single-electron and two-electron tunneling in a hybrid single-electron transistor. Our measurements indicate that the effective area of a conduction channel is about one order of magnitude larger than predicted by theoretical calculations. With the second method, transmission electron microscopy, we demonstrate that variations in the barrier thickness are a plausible explanation for the larger effective area and an enhancement of higher order tunneling processes.
△ Less
Submitted 26 June, 2014;
originally announced June 2014.
-
Electric field driven magnetic domain wall motion in ferromagnetic-ferroelectric heterostructures
Authors:
Ben Van de Wiele,
Lasse Laurson,
Kévin Franke,
Sebastiaan van Dijken
Abstract:
We investigate magnetic domain wall (MDW) dynamics induced by applied electric fields in ferromagnetic-ferroelectric thin-film heterostructures. In contrast to conventional driving mechanisms where MDW motion is induced directly by magnetic fields or electric currents, MDW motion arises here as a result of strong pinning of MDWs onto ferroelectric domain walls (FDWs) via local strain coupling. By…
▽ More
We investigate magnetic domain wall (MDW) dynamics induced by applied electric fields in ferromagnetic-ferroelectric thin-film heterostructures. In contrast to conventional driving mechanisms where MDW motion is induced directly by magnetic fields or electric currents, MDW motion arises here as a result of strong pinning of MDWs onto ferroelectric domain walls (FDWs) via local strain coupling. By performing extensive micromagnetic simulations, we find several dynamical regimes, including instabilities such as spin wave emission and complex transformations of the MDW structure. In all cases, the time-averaged MDW velocity equals that of the FDW, indicating the absence of Walker breakdown.
△ Less
Submitted 16 January, 2014;
originally announced January 2014.
-
Size Dependence of Domain Pattern Transfer in Multiferroic Heterostructures
Authors:
Kévin J. A. Franke,
Sebastiaan van Dijken
Abstract:
Magnetoelectric coupling in multiferroic heterostructures can produce large lateral modulations of magnetic anisotropy enabling the imprinting of ferroelectric domains into ferromagnetic films. Exchange and magnetostatic interactions within ferromagnetic films oppose the formation of such domains. Using micromagnetic simulations and a 1-D model, we demonstrate that competing energies lead to the b…
▽ More
Magnetoelectric coupling in multiferroic heterostructures can produce large lateral modulations of magnetic anisotropy enabling the imprinting of ferroelectric domains into ferromagnetic films. Exchange and magnetostatic interactions within ferromagnetic films oppose the formation of such domains. Using micromagnetic simulations and a 1-D model, we demonstrate that competing energies lead to the breakdown of domain pattern transfer below a critical domain width. Moreover, rotation of the magnetic field results in abrupt transitions between two scaling regimes with different magnetic anisotropy.
△ Less
Submitted 16 January, 2014; v1 submitted 2 July, 2013;
originally announced July 2013.
-
Backhop** effect in magnetic tunnel junctions: comparison between theory and experiment
Authors:
Witold Skowroński,
Piotr Ogrodnik,
Jerzy Wrona,
Tomasz Stobiecki,
Renata Świrkowicz,
Józef Barnaś,
Günter Reiss,
Sebastiaan van Dijken
Abstract:
We report on the magnetic switching and backhop** effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth switching between the magnetization states, which appears when the current direction favors the parallel magnetic configuration. The effect depends on the barrier…
▽ More
We report on the magnetic switching and backhop** effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth switching between the magnetization states, which appears when the current direction favors the parallel magnetic configuration. The effect depends on the barrier thickness $t_b$, and is not observed in tunnel junctions with very thin MgO tunnel barriers, $t_b$ $<$ 0.95 nm. Switching dependence on the bias voltage and barrier thickness is explained in terms of the macrospin model, with the magnetization dynamics described by the modified Landau-Lifshitz-Gilbert equation. Numerical simulations indicate that the competition between in-plane and out-of-plane torque components can result at high bias voltages in a non-deterministic switching behavior, in agreement with experimental observations. When the barrier thickness is reduced, the overall coupling between the magnetic layers across the barrier becomes ferromagnetic, which suppresses the backhop** effect.
△ Less
Submitted 13 May, 2013;
originally announced May 2013.
-
Influence of MgO tunnel barrier thickness on spin-transfer ferromagnetic resonance and torque in magnetic tunnel junctions
Authors:
Witold Skowroński,
Maciej Czapkiewicz,
Marek Frankowski,
Jerzy Wrona,
Tomasz Stobiecki,
Günter Reiss,
Khattiya Chalapat,
Gheorghe S. Paraoanu,
Sebastiaan van Dijken
Abstract:
Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of an RF current into nanosized MTJs generates a DC mixing voltage across the device when the frequency is in resonance with the resistance oscillations arising f…
▽ More
Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of an RF current into nanosized MTJs generates a DC mixing voltage across the device when the frequency is in resonance with the resistance oscillations arising from the spin transfer torque. Magnetization precession in the free and reference layers of the MTJs is analyzed by comparing ST-FMR signals with macrospin and micromagnetic simulations. From ST-FMR spectra at different DC bias voltage, the in-plane and perpendicular torkances are derived. The experiments and free-electron model calculations show that the absolute torque values are independent of tunnel barrier thickness. The influence of coupling between the free and reference layer of the MTJs on the ST-FMR signals and the derived torkances are discussed.
△ Less
Submitted 30 January, 2013;
originally announced January 2013.
-
Temperature control of local magnetic anisotropy in multiferroic CoFe/BaTiO3
Authors:
Tuomas H. E. Lahtinen,
Sebastiaan van Dijken
Abstract:
This paper reports on the temperature evolution of local elastic interactions between ferromagnetic CoFe films and ferroelectric BaTiO3 substrates. Polarization microscopy measurements indicate that growth-induced stripe domains in the CoFe films are preserved and strengthened during cooling and heating through the structural phase transitions of BaTiO3. Moreover, rotation of the magnetic easy axe…
▽ More
This paper reports on the temperature evolution of local elastic interactions between ferromagnetic CoFe films and ferroelectric BaTiO3 substrates. Polarization microscopy measurements indicate that growth-induced stripe domains in the CoFe films are preserved and strengthened during cooling and heating through the structural phase transitions of BaTiO3. Moreover, rotation of the magnetic easy axes at the tertragonal-to-orthorhombic transition (T = 278 K) and at T = 380 K simultaneously switches the local magnetization of both uniaxial domains by 90 degrees. Irreversible changes in the ferromagnetic domain pattern are induced when the room-temperature ferroelectric domain structure is altered after temperature cycling.
△ Less
Submitted 1 March, 2013; v1 submitted 23 January, 2013;
originally announced January 2013.
-
Alternating domains with uniaxial and biaxial magnetic anisotropy in epitaxial Fe films on BaTiO3
Authors:
Tuomas H. E. Lahtinen,
Yasuhiro Shirahata,
Lide Yao,
Kévin J. A. Franke,
Gorige Venkataiah,
Tomoyasu Taniyama,
Sebastiaan van Dijken
Abstract:
We report on domain formation and magnetization reversal in epitaxial Fe films on ferroelectric BaTiO3 substrates with ferroelastic a-c stripe domains. The Fe films exhibit biaxial magnetic anisotropy on top of c domains with out-of-plane polarization, whereas the in-plane lattice elongation of a domains induces uniaxial magnetoelastic anisotropy via inverse magnetostriction. The strong modulation…
▽ More
We report on domain formation and magnetization reversal in epitaxial Fe films on ferroelectric BaTiO3 substrates with ferroelastic a-c stripe domains. The Fe films exhibit biaxial magnetic anisotropy on top of c domains with out-of-plane polarization, whereas the in-plane lattice elongation of a domains induces uniaxial magnetoelastic anisotropy via inverse magnetostriction. The strong modulation of magnetic anisotropy symmetry results in full imprinting of the a-c domain pattern in the Fe films. Exchange and magnetostatic interactions between neighboring magnetic stripes further influence magnetization reversal and pattern formation within the a and c domains.
△ Less
Submitted 7 January, 2013; v1 submitted 24 October, 2012;
originally announced October 2012.
-
Magnetic field sensor with voltage-tunable sensing properties
Authors:
Witold Skowroński,
Piotr Wiśniowski,
Tomasz Stobiecki,
Sebastiaan van Dijken,
Susana Cardoso,
Paulo P. Freitas
Abstract:
We report on a magnetic field sensor based on CoFeB/MgO/CoFeB magnetic tunnel junctions. By taking advantage of the perpendicular magnetic anisotropy of the CoFeB/MgO interface, the magnetization of the sensing layer is tilted out-of-plane which results in a linear response to in-plane magnetic fields. The application of a bias voltage across the MgO tunnel barrier of the field sensor affects the…
▽ More
We report on a magnetic field sensor based on CoFeB/MgO/CoFeB magnetic tunnel junctions. By taking advantage of the perpendicular magnetic anisotropy of the CoFeB/MgO interface, the magnetization of the sensing layer is tilted out-of-plane which results in a linear response to in-plane magnetic fields. The application of a bias voltage across the MgO tunnel barrier of the field sensor affects the magnetic anisotropy and thereby its sensing properties. An increase of the maximum sensitivity and simultaneous decrease of the magnetic field operating range by a factor of two is measured. Based on these results, we propose a voltage-tunable sensor design that allows for active control of the sensitivity and the operating filed range with the strength and polarity of the applied bias voltage.
△ Less
Submitted 28 August, 2012;
originally announced August 2012.
-
d0 Ferromagnetic Interface Between Non-magnetic Perovskites
Authors:
R. Oja,
M. Tyunina,
L. Yao,
T. Pinomaa,
T. Kocourek,
A. Dejneka,
O. Stupakov,
A. Jelinek,
V. Trepakov,
S. van Dijken,
R. M. Nieminen
Abstract:
We use computational and experimental methods to study d0 ferromagnetism at a charge- imbalanced interface between two perovskites. In SrTiO3/KTaO3 superlattice calculations, the charge imbalance introduces holes in the SrTiO3 layer, inducing a d0 ferromagnetic half-metallic 2D electron gas at the interface oxygen 2p orbitals. The charge imbalance overrides do** by vacancies at realistic concent…
▽ More
We use computational and experimental methods to study d0 ferromagnetism at a charge- imbalanced interface between two perovskites. In SrTiO3/KTaO3 superlattice calculations, the charge imbalance introduces holes in the SrTiO3 layer, inducing a d0 ferromagnetic half-metallic 2D electron gas at the interface oxygen 2p orbitals. The charge imbalance overrides do** by vacancies at realistic concentrations. Varying the constituent materials shows ferromagnetism to be a gen- eral property of hole-type d0 perovskite interfaces. Atomically sharp epitaxial d0 SrTiO3/KTaO3, SrTiO3 /KNbO3 and SrTiO3 /NaNbO3 interfaces are found to exhibit ferromagnetic hysteresis at room temperature. We suggest the behavior is due to high density of states and exchange coupling at the oxygen t1g band in comparison with the more studied d band t2g symmetry electron gas.
△ Less
Submitted 27 September, 2012; v1 submitted 1 June, 2012;
originally announced June 2012.
-
Field Tuning of Ferromagnetic Domain Walls on Elastically Coupled Ferroelectric Domain Boundaries
Authors:
Kévin J. A. Franke,
Tuomas H. E. Lahtinen,
Sebastiaan van Dijken
Abstract:
We report on the evolution of ferromagnetic domain walls during magnetization reversal in elastically coupled ferromagnetic-ferroelectric heterostructures. Using optical polarization microscopy and micromagnetic simulations, we demonstrate that the spin rotation and width of ferromagnetic domain walls can be accurately controlled by the strength of the applied magnetic field if the ferromagnetic w…
▽ More
We report on the evolution of ferromagnetic domain walls during magnetization reversal in elastically coupled ferromagnetic-ferroelectric heterostructures. Using optical polarization microscopy and micromagnetic simulations, we demonstrate that the spin rotation and width of ferromagnetic domain walls can be accurately controlled by the strength of the applied magnetic field if the ferromagnetic walls are pinned onto 90 degrees ferroelectric domain boundaries. Moreover, reversible switching between magnetically charged and uncharged domain walls is initiated by magnetic field rotation. Switching between both wall types reverses the wall chirality and abruptly changes the width of the ferromagnetic domain walls by up to 1000%.
△ Less
Submitted 31 January, 2012;
originally announced January 2012.
-
Spin transfer torque oscillator based on asymmetric magnetic tunnel junctions
Authors:
Witold Skowroński,
Tomasz Stobiecki,
Jerzy Wrona,
Günter Reiss,
Sebastiaan van Dijken
Abstract:
We present a study of the spin transfer torque oscillator based on CoFeB/MgO/CoFeB asymmetric magnetic tunnel junctions. We observe microwave precession in junctions with different thickness of the free magnetization layer. Taking advantage of the ferromagnetic interlayer exchange coupling between the free and reference layer in the MTJ and perpendicular interface anisotropy in thin CoFeB electrod…
▽ More
We present a study of the spin transfer torque oscillator based on CoFeB/MgO/CoFeB asymmetric magnetic tunnel junctions. We observe microwave precession in junctions with different thickness of the free magnetization layer. Taking advantage of the ferromagnetic interlayer exchange coupling between the free and reference layer in the MTJ and perpendicular interface anisotropy in thin CoFeB electrode we demonstrate the nanometer scale device that can generate high frequency signal without external magnetic field applied. The amplitude of the oscillation exceeds 10 nV/Hz^0.5 at 1.5 GHz.
△ Less
Submitted 3 October, 2011;
originally announced October 2011.
-
Electric-field control of magnetic domain wall motion and local magnetization reversal
Authors:
Tuomas H. E. Lahtinen,
Kévin J. A. Franke,
Sebastiaan van Dijken
Abstract:
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has potential advantages including enhanced functionality and low power consumption. Here, we report on an approach to electrically control local magnetic properties, inclu…
▽ More
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has potential advantages including enhanced functionality and low power consumption. Here, we report on an approach to electrically control local magnetic properties, including the writing and erasure of regular ferromagnetic domain patterns and the motion of magnetic domain walls, in multiferroic CoFe-BaTiO3 heterostructures. Our method is based on recurrent strain transfer from ferroelastic domains in ferroelectric media to continuous magnetostrictive films with negligible magnetocrystalline anisotropy. Optical polarization microscopy of both ferromagnetic and ferroelectric domain structures reveals that domain correlations and strong inter-ferroic domain wall pinning persist in an applied electric field. This leads to an unprecedented electric controllability over the ferromagnetic microstructure, an accomplishment that produces giant magnetoelectric coupling effects and opens the way to multiferroic spintronic devices.
△ Less
Submitted 26 September, 2011;
originally announced September 2011.
-
Influence of substrate bias on the structural and dielectrical properties of magnetron-sputtered BaxSr1-xTiO3 thin films
Authors:
Tommi Riekkinen,
Jan Saijets,
Pasi Kostamo,
Timo Sajavaara,
Sebastiaan van Dijken
Abstract:
The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition t…
▽ More
The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition towards higher temperature, an increase of the dielectric permittivity and tunability at room temperature, and a deterioration of the dielectric loss. To a large extent these changes correlate to a gradual increase of the tensile in-plane film strain with substrate bias and an abrupt change in film composition.
△ Less
Submitted 9 September, 2009;
originally announced September 2009.
