Showing 1–35 of 35 results for author: de Lima, F C

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS$_2$ Heterostructures at Room Temperature

Authors: Rafael O. Cunha, Yunier Garcia-Basabe, Dunieskys G. Larrude, Matheus Gamino, Erika N. Lima, Felipe Crasto de Lima, Adalberto Fazzio, Sergio M. Rezende, Antonio Azevedo, Joaquim B. S. Mendes

Abstract: We report experimental investigations of spin-to-charge current conversion and charge transfer dynamics (CT) at the interface of graphene/WS$_2$ van der Waals heterostructure. Pure spin current was produced by the spin precession in the microwave-driven ferromagnetic resonance of a permalloy film (Py-Ni$_{81}$Fe$_{19}$) and injected into the graphene/WS$_2$ heterostructure through the spin pum**… ▽ More We report experimental investigations of spin-to-charge current conversion and charge transfer dynamics (CT) at the interface of graphene/WS$_2$ van der Waals heterostructure. Pure spin current was produced by the spin precession in the microwave-driven ferromagnetic resonance of a permalloy film (Py-Ni$_{81}$Fe$_{19}$) and injected into the graphene/WS$_2$ heterostructure through the spin pum** process. The observed spin-to-charge current conversion in the heterostructure is attributed to inverse Rashba-Edelstein effect (IREE) at the graphene/WS$_2$ interface. Interfacial CT dynamics in this heterostructure was investigated based on the framework of core-hole-clock (CHC) approach. The results obtained from spin pum** and CHC studies show that the spin-to-charge current conversion and charge transfer process are more efficient in the graphene/WS$_2$ heterostructure compared to isolated WS2 and graphene films. The results show that the presence of WS$_2$ flakes improves the current conversion efficiency. These experimental results are corroborated by density functional theory (DFT) calculations, which reveal (i) Rashba spin-orbit splitting of graphene orbitals and (ii) electronic coupling between graphene and WS$_2$ orbitals. This study provides valuable insights for optimizing the design and performance of spintronic devices. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Comments: 25 pages, 7 figures

Exploring Topological Transport in Pt$_2$HgSe$_3$ Nanoribbons: Insights for Spintronic Device Integration

Authors: Rafael L. H. Freire, F. Crasto de Lima, Roberto H. Miwa, A. Fazzio

Abstract: The discovery of the quantum spin Hall effect led to the exploration of the electronic transport for spintronic devices. Here, we theoretically investigated the electronic conductance in large-gap realistic quantum spin Hall system, Pt$_2$HgSe$_3$ nanoribbons. By an ab initio approach, we found that the edge states present a penetration depth of about $0.9$\,{nm}, which is much smaller than those… ▽ More The discovery of the quantum spin Hall effect led to the exploration of the electronic transport for spintronic devices. Here, we theoretically investigated the electronic conductance in large-gap realistic quantum spin Hall system, Pt$_2$HgSe$_3$ nanoribbons. By an ab initio approach, we found that the edge states present a penetration depth of about $0.9$\,{nm}, which is much smaller than those predicted in other 2D topological systems. Thus, suggesting that Pt$_2$HgSe$_3$ allows the exploitation of topological transport properties in narrow ribbons. Using non-equilibrium Green's functions calculations, we have examined the electron conductivity upon the presence of Se\,$\leftrightarrow$\,Hg antistructure defects randomly distributed in the Pt$_2$HgSe$_3$ scattering region. By considering scattering lengths up to $109$\,nm, we found localization lengths that can surpass $μ$m sizes for narrow nanoribbons ($<9$\,nm). These findings can contribute to further understanding the behavior of topological insulators under realistic conditions and their integration within electronic, spintronic devices. △ Less

Submitted 10 May, 2024; originally announced May 2024.

Journal ref: Phys. Rev. B 110, 035111 (2024)

Resonant helical multi-edge transport in Sierpiński carpets

Authors: M. A. Toloza Sandoval, A. L. Araújo, F. Crasto de Lima, A. Fazzio

Abstract: In recent years, synthesis and experimental research of fractalized materials has evolved in a paradigmatic crossover with topological phases of matter. We present here a theoretical investigation of the helical edge transport in Sierpinski carpets (SCs), combining the Bernevig-Hughes-Zhang (BHZ) model and the Landauer approach. Starting from a pristine two-dimensional topological insulator (2DTI)… ▽ More In recent years, synthesis and experimental research of fractalized materials has evolved in a paradigmatic crossover with topological phases of matter. We present here a theoretical investigation of the helical edge transport in Sierpinski carpets (SCs), combining the Bernevig-Hughes-Zhang (BHZ) model and the Landauer approach. Starting from a pristine two-dimensional topological insulator (2DTI), according to the BHZ model, our results reveal resonant transport modes when the SC fractal generation reaches the same scale as the space discretization; these modes are analyzed within a contour plot map** of the local spin-polarized currents, shown spanned and assisted by inner-edge channels. From such a deeply fractalized SC building block, we introduce a rich tapestry formed by superior SC hierarchies, enlightening intricate patterns and unique fingerprints that offer valuable insights into how helical edge transport occurs in these fractal dimensions. △ Less

Submitted 29 January, 2024; originally announced January 2024.

Design of spin-orbital-textures in ferromagnetic/topological insulator interfaces

Authors: A. L. Araújo, F. Crasto de Lima, C. H. Lewenkopf, A. Fazzio

Abstract: Spin-orbital textures in topological insulators due to the spin locking with the electron momentum, play an important role in spintronic phenomena that arise from the interplay between charge and spin degrees of freedom. We have explored interfaces between a ferromagnetic system (CrI$_3$) and a topological insulator (Bi$_2$Se$_3$) that allow the manipulation of spin-orbital textures. Within an {\i… ▽ More Spin-orbital textures in topological insulators due to the spin locking with the electron momentum, play an important role in spintronic phenomena that arise from the interplay between charge and spin degrees of freedom. We have explored interfaces between a ferromagnetic system (CrI$_3$) and a topological insulator (Bi$_2$Se$_3$) that allow the manipulation of spin-orbital textures. Within an {\it ab initio} approach we have extracted the spin-orbital-textures dependence of experimentally achievable interface designs. The presence of the ferromagnetic system introduces anisotropic transport of the electronic spin and charge. From a parameterized Hamiltonian model we capture the anisotropic backscattering behavior, showing its extension to other ferromagnetic/topological insulator interfaces. We verified that the van der Waals TI/MI interface is an excellent platform for controlling the spin degree of freedom arising from topological states, providing a rich family of unconventional spin texture configurations. △ Less

Submitted 18 November, 2023; originally announced November 2023.

Journal ref: Phys. Rev. B 109, 085142 (2024)

Electronic and spin transport in Bismuthene with magnetic impurities

Authors: Armando Pezo, Felipe Crasto de Lima, Adalberto Fazzio

Abstract: Topological insulators have remained as candidates for future electronic devices since their first experimental realization in the past decade. The existence of topologically protected edge states could be exploited to generate a robust platform and develop quantum computers. In this work we explore the role of magnetic impurities in the transport properties of topological insulators, in particula… ▽ More Topological insulators have remained as candidates for future electronic devices since their first experimental realization in the past decade. The existence of topologically protected edge states could be exploited to generate a robust platform and develop quantum computers. In this work we explore the role of magnetic impurities in the transport properties of topological insulators, in particular, we study the effect on the edge states conductivity. By means of realistic $\it{ab}$ $\it{initio}$ calculations we simulate the interaction between magnetic adatoms and topological insulators, furthermore, our main goal is to obtain the transport properties for large samples as it would be possible to localize edge states at large scales. △ Less

Submitted 13 September, 2023; originally announced September 2023.

Substrate suppression of oxidation process in pnictogen monolayers

Authors: R. L. H. Freire, F. Crasto de Lima, A. Fazzio

Abstract: 2D materials present an interesting platform for device designs. However, oxidation can drastically change the system's properties, which need to be accounted for. Through {\it ab initio} calculations, we investigated freestanding and SiC-supported As, Sb, and Bi mono-elemental layers. The oxidation process occurs through an O$_2$ spin-state transition, accounted for within the Landau-Zener transi… ▽ More 2D materials present an interesting platform for device designs. However, oxidation can drastically change the system's properties, which need to be accounted for. Through {\it ab initio} calculations, we investigated freestanding and SiC-supported As, Sb, and Bi mono-elemental layers. The oxidation process occurs through an O$_2$ spin-state transition, accounted for within the Landau-Zener transition. Additionally, we have investigated the oxidation barriers and the role of spin-orbit coupling. Our calculations pointed out that the presence of SiC substrate reduces the oxidation time scale compared to a freestanding monolayer. We have extracted the energy barrier transition, compatible with our spin-transition analysis. Besides, spin-orbit coupling is relevant to the oxidation mechanisms and alters time scales. The energy barriers decrease as the pnictogen changes from As to Sb to Bi for the freestanding systems, while for SiC-supported, they increase across the pnictogen family. Our computed energy barriers confirm the enhanced robustness against oxidation for the SiC-supported systems. △ Less

Submitted 30 June, 2023; originally announced July 2023.

Journal ref: Phys. Chem. Chem. Phys., 2023

Bridging Borophene and Metal Surfaces: Structural, Electronic, and Electron Transport Properties

Authors: Wanderlã L. Scopel, F. Crasto de Lima, Pedro H. Souza, José E. Padilha, Roberto H. Miwa

Abstract: Currently, solid interfaces composed of two-dimensional materials (2D) in contact with metal surfaces (m-surf) have been the subject of intense research, where the borophene bilayer (BBL) has been considered a prominent material for the development of electronic devices based on 2D platforms. In this work, we present a theoretical study of the energetic, structural, and electronic properties of th… ▽ More Currently, solid interfaces composed of two-dimensional materials (2D) in contact with metal surfaces (m-surf) have been the subject of intense research, where the borophene bilayer (BBL) has been considered a prominent material for the development of electronic devices based on 2D platforms. In this work, we present a theoretical study of the energetic, structural, and electronic properties of the BBL/m-surf interface, with m-surf = Ag, Au, and Al (111) surfaces, and the electronic transport properties of BBL channels connected to the BBL/m-surf top contacts. We find that the bottom-most BBL layer becomes metalized, due to the orbital hybridization with the metal surface states, resulting in BBL/m-surf ohmic contacts, meanwhile, the inner and top-most boron layers kept their semiconducting character. The net charge transfers reveal that BBL has become $n$-type ($p$-type) doped for m-surf = Ag, and Al (= Au). A thorough structural characterization of the BBL/m-surf interface, using a series of simulations of the X-ray photoelectron spectra, shows that the formation of BBL/m-surf interface is characterized by a redshift of the B-$1s$ spectra. Further electronic transport results revealed the emergence of a Schottky barrier between 0.1 and 0.2\,eV between the BBL/m-surf contact and the BBL channels. We believe that our findings are timely, bringing important contributions to the applicability of borophene bilayers for develo** 2D electronic devices. △ Less

Submitted 10 May, 2023; originally announced May 2023.

Journal ref: J. Phys. Chem. C 127, 17556 (2023)

Uncovering the Structural Evolution Arsenene on SiC Substrate

Authors: A. K. Okazaki, R. Furlan de Oliveira, R. L. H. Freire, A. Fazzio, F. Crasto de Lima

Abstract: Two-dimensional arsenic allotropes have been grown on metallic surfaces, while topological properties have been theoretically described on strained structures. Here we experimentally grow arsenene by molecular beam epitaxy over the insulating SiC substrate. The arsenene presents a flat structure with a strain field that follows the SiC surface periodicity. Our ab initio simulations, based on the d… ▽ More Two-dimensional arsenic allotropes have been grown on metallic surfaces, while topological properties have been theoretically described on strained structures. Here we experimentally grow arsenene by molecular beam epitaxy over the insulating SiC substrate. The arsenene presents a flat structure with a strain field that follows the SiC surface periodicity. Our ab initio simulations, based on the density functional theory, corroborate the experimental observation. The strained structure presents a new arsenene allotrope with a triangular structure, rather than the honeycomb previously predicted for other pnictogens. This strained structure presents a Peierls-like transition leading to an indirect gap semiconducting behavior. △ Less

Submitted 10 February, 2023; originally announced February 2023.

Journal ref: J. Phys. Chem. C 2023

Topological insulating phase arising in transition metal dichalcogenide alloy

Authors: F. Crasto de Lima, B. Focassio, R. H. Miwa, A. Fazzio

Abstract: Transition metal dichalcogenides have been the subject of numerous studies addressing technological applications and fundamental issues. Single-layer PtSe2 is a semiconductor with a trivial bandgap, in contrast, its counterpart with 25% of Se atoms substituted by Hg, Pt2HgSe3 (jacutingaite, a naturally occurring mineral), is a 2D topological insulator with a large bandgap. Based on ab-initio calcu… ▽ More Transition metal dichalcogenides have been the subject of numerous studies addressing technological applications and fundamental issues. Single-layer PtSe2 is a semiconductor with a trivial bandgap, in contrast, its counterpart with 25% of Se atoms substituted by Hg, Pt2HgSe3 (jacutingaite, a naturally occurring mineral), is a 2D topological insulator with a large bandgap. Based on ab-initio calculations, we investigate the energetic stability, and the topological transition in Pt(HgxSe1-x)2 as a function of alloy concentration, and the distribution of Hg atoms embedded in the PtSe2 host. Our findings reveal the dependence of the topological phase with respect to the alloy concentration and robustness with respect distribution of Hg. Through a combination of our ab-initio results and a defect wave function percolation model, we estimate the random alloy concentration threshold for the topological transition to be only 9%. Our results expand the possible search for non-trivial topological phases in random alloy systems. △ Less

Submitted 12 December, 2022; originally announced December 2022.

Journal ref: 2023 2D Mater. 10 035001

Nanoscale Structural and Electronic Properties of Cellulose/Graphene Interfaces

Authors: Gustavo H. Silvestre, Felipe Crasto de Lima, Juliana S. Bernardes, Adalberto Fazzio, Roberto H. Miwa

Abstract: The development of electronic devices based on the functionalization of (nano)cellulose platforms relies upon an atomistic understanding of the structural, and electronic properties of the combined system, cellulose/functional element. In this work, we present a theoretical study of the nanocellulose/graphene interface (nCL/G) based on first-principles calculations. We find that the binding energi… ▽ More The development of electronic devices based on the functionalization of (nano)cellulose platforms relies upon an atomistic understanding of the structural, and electronic properties of the combined system, cellulose/functional element. In this work, we present a theoretical study of the nanocellulose/graphene interface (nCL/G) based on first-principles calculations. We find that the binding energies of both hydrophobic/G (nCL$^{\rm phob}$/G) and hydrophilic/G (nCL$^{\rm phil}$/G) interfaces are primarily dictated by the van der Waals interactions, and are comparable with that of their 2D interface counterparts. We verify that the energetic preference of nCL$^{\rm phob}$/G has been reinforced by the inclusion of an aqueous media via the implicit solvation model. Further structural characterization was carried out using a set of simulations of Carbon K-edge X-ray absorption spectra to identify and distinguish the key absorption features of the nCL$^{\rm phob}$/G and nCL$^{\rm phil}$/G interfaces. The electronic structure calculations reveal that the linear energy bands of graphene lie in the band gap of the nCL, sheet, while depletion/accumulation charge density regions are observed. We show that external agents, i.e. electric field and mechanical strain, allow for tunability of the Dirac cone and the charge density at the interface. The control/maintenance of the Dirac cone states in nCL/G is an important feature for the development of electronic devices based on cellulosic platforms. △ Less

Submitted 24 August, 2022; originally announced August 2022.

Journal ref: Phys. Chem. Chem. Phys., 2023,25, 1161-1168

Vacancy localization effects on MX2 transition metal dichalcogenides: a systematic ab-initio study

Authors: Rafael L. H. Freire, Felipe Crasto de Lima, Adalberto Fazzio

Abstract: Two-dimensional transition metal dichalcogenides (MX$_2$) vacancy formation energetics is extensively investigated. Within an ab-initio approach we study the MX$_2$ systems, with M=Mo, W, Ni, Pd and Pt, and X=S, Se, and Te. Here we classify that chalcogen vacancies are always energetic favorable over the transition metal ones. However, for late transition metals Pd $4d$, and Pt $5d$ the metal vaca… ▽ More Two-dimensional transition metal dichalcogenides (MX$_2$) vacancy formation energetics is extensively investigated. Within an ab-initio approach we study the MX$_2$ systems, with M=Mo, W, Ni, Pd and Pt, and X=S, Se, and Te. Here we classify that chalcogen vacancies are always energetic favorable over the transition metal ones. However, for late transition metals Pd $4d$, and Pt $5d$ the metal vacancy are experimentally achievable, bringing up localized magnetic moments within the semiconducting matrix. By quantifying the localization of the chalcogen vacancy states we evidentiate that it rules the intra- and inter-vacancy interactions that establish both the number of vacancy states neatly lying within the semiconducting gap, as well as its electronic dispersion and SOC splitting. Combining different vacancies and phase variability 1T and 1H of the explored systems allow us to construct a guiding picture for the vacancy states localization. △ Less

Submitted 5 May, 2022; originally announced May 2022.

Journal ref: Phys. Rev. Materials 6, 084002 (2022)

The role of functional thiolated molecules on the enhanced electronic transport of interconnected MoS$_2$ nanostructures

Authors: Rafael L. H. Freire, Felipe Crasto de Lima, Rafael Furlan de Oliveira, Rodrigo B. Capaz, Adalberto Fazzio

Abstract: Molecular linkers have emerged as an effective strategy to improve electronic transport properties on solution-processed layered materials via defect functionalization. However, a detailed discussion on the microscopic mechanisms behind the beneficial effects of functionalization is still missing. Here, by first-principles calculations based on density functional theory, we investigate the effects… ▽ More Molecular linkers have emerged as an effective strategy to improve electronic transport properties on solution-processed layered materials via defect functionalization. However, a detailed discussion on the microscopic mechanisms behind the beneficial effects of functionalization is still missing. Here, by first-principles calculations based on density functional theory, we investigate the effects on the electronic properties of interconnected MoS$_2$ model flakes systems upon functionalization with different thiol molecule linkers, namely thiophenol, 1,4-benzenedithiol, 1,2-ethanedithiol, and 1,3-propanedithiol. The bonding of benzene- and ethanedithiol bridging adjacent armchair MoS$_2$ nanoflakes leads to electronic states just above or at the Fermi level, thus forming a molecular channel for electronic transport between flakes. In addition, the molecular linker reduces the potential barrier for thermally activated hop** between neighboring flakes, improving the conductivity as verified in experiments. The comprehension of such mechanisms helps in future developments of solution-processed layered materials for use on 2D electronic devices. △ Less

Submitted 17 March, 2022; originally announced March 2022.

Electronic properties of the Weyl semimetals Co$_2$MnX (X=Si, Ge, Sn)

Authors: Abhishek Sharan, Felipe Crasto de Lima, Shoaib Khalid, Roberto H. Miwa, Anderson Janotti

Abstract: Using first-principles electronic structure calculations, we show that ferromagnetic Heusler compounds Co$_2$MnX (X= Si, Ge, Sn) present non-trivial topological characteristics and belong to the category of Weyl semimetals. These materials exhibit two topologically interesting band crossings near the Fermi level. These band crossings have complex 3D geometries in the Brillouin zone and are charact… ▽ More Using first-principles electronic structure calculations, we show that ferromagnetic Heusler compounds Co$_2$MnX (X= Si, Ge, Sn) present non-trivial topological characteristics and belong to the category of Weyl semimetals. These materials exhibit two topologically interesting band crossings near the Fermi level. These band crossings have complex 3D geometries in the Brillouin zone and are characterized by non-trivial topology as Hopf links and chain-like nodal lines, that are protected by the perpendicular mirror planes. The spin-orbit interaction split these nodal lines into several zero-dimensional Weyl band crossings. Unlike previously known topologically non-trivial Heusler materials, these majority-spin band crossings lie in the band gap of minority spin bands, potentially facilitating its experimental realization. △ Less

Submitted 28 November, 2021; originally announced November 2021.

At the verge of topology: vacancy-driven quantum spin Hall in trivial insulators

Authors: F. Crasto de Lima, Adalberto Fazzio

Abstract: Vacancies in materials structure -- lowering its atomic density -- take the system closer to the atomic limit, to which all systems are topologically trivial. Here we show a mechanism of mediated interaction between vacancies inducing a topologically non-trivial phase. Within an {\it ab initio} approach we explore topological transition dependence with the vacancy density in transition metal dicha… ▽ More Vacancies in materials structure -- lowering its atomic density -- take the system closer to the atomic limit, to which all systems are topologically trivial. Here we show a mechanism of mediated interaction between vacancies inducing a topologically non-trivial phase. Within an {\it ab initio} approach we explore topological transition dependence with the vacancy density in transition metal dichalcogenides. As a case of study, we focus on the PtSe$_2$, to which pristine form is a trivial semiconductor with an energy gap of $1.2$\,eV. The vacancies states lead to a large topological gap of $180$\,meV within the pristine system gap. We derive an effective model describing this topological phase in other transition metal dichalcogenide systems. The mechanism driving the topological phase allows the construction of backscattering protected metallic channels embedded in a semiconducting host. △ Less

Submitted 24 September, 2021; originally announced September 2021.

Amorphous Bi$_2$Se$_3$ structural, electronic, and topological nature by first-principles

Authors: Bruno Focassio, Gabriel R. Schleder, F. Crasto de Lima, Caio Lewenkopf, Adalberto Fazzio

Abstract: Crystalline $\rm Bi_2Se_3$ is one of the most explored three-dimensional topological insulator, with a $0.3\;\rm eV$ energy gap making it promising for applications. Its amorphous counterpart could bring to light new possibilities for large scale synthesis and applications. Using ab initio molecular dynamics simulations, we have studied realistic amorphous $\rm Bi_2Se_3$ phases generated by differ… ▽ More Crystalline $\rm Bi_2Se_3$ is one of the most explored three-dimensional topological insulator, with a $0.3\;\rm eV$ energy gap making it promising for applications. Its amorphous counterpart could bring to light new possibilities for large scale synthesis and applications. Using ab initio molecular dynamics simulations, we have studied realistic amorphous $\rm Bi_2Se_3$ phases generated by different processes of melting, quenching, and annealing. Extensive structural and electronic characterizations show that the melting process induces an energy gap decrease ruled by growth of the defective local environments. This behavior dictates a weak stability of the topological phase to disorder, characterized by the spin Bott index. Interestingly, we identify the occurrence of topologically trivial surface states in amorphous $\rm Bi_2Se_3$ that show a strong resemblance with standard helical topological states. Our results and methods advance the search of topological phases in three-dimensional amorphous solids. △ Less

Submitted 13 December, 2021; v1 submitted 22 September, 2021; originally announced September 2021.

Journal ref: Phys. Rev. B 104, 214206 (2021)

Machine learning of microscopic ingredients for graphene oxide/cellulose interaction

Authors: Romana Petry, Gustavo Silvestre, Bruno Focassio, F. Crasto de Lima, Roberto H. Miwa, Adalberto Fazzio

Abstract: Understanding the role of microscopic attributes in nanocomposites allows for a controlled and, therefore, acceleration in experimental system designs. In this work, we extracted the relevant parameters controlling the graphene oxide binding strength to cellulose by combining first-principles calculations and machine learning algorithms. We were able to classify the systems among two classes with… ▽ More Understanding the role of microscopic attributes in nanocomposites allows for a controlled and, therefore, acceleration in experimental system designs. In this work, we extracted the relevant parameters controlling the graphene oxide binding strength to cellulose by combining first-principles calculations and machine learning algorithms. We were able to classify the systems among two classes with higher and lower binding energies, which are well defined based on the isolated graphene oxide features. By a theoretical X-ray photoelectron spectroscopy analysis, we show the extraction of these relevant features. Additionally, we demonstrate the possibilities of a refined control within a machine learning regression between the binding energy values and the system's characteristics. Our work presents a guiding map to the control graphene oxide/cellulose interaction. △ Less

Submitted 2 July, 2021; originally announced July 2021.

Journal ref: Langmuir 38, 1124 (2022)

Unveiling the dopant segregation effect at hematite interfaces

Authors: Felipe Crasto de Lima, Gabriel R. Schleder, João B. Souza Junior, Flavio L. Souza, Fabrício B. Destro, Roberto H. Miwa, Edson R. Leite, Adalberto Fazzio

Abstract: Understanding the effects of atomic structure modification in hematite photoanodes is essential for the rational design of high-efficiency functionalizations. Recently it was found that interface modification with Sn/Sb segregates considerably increases hematite photocatalytic efficiency. However, the understanding of the different electronic effects of these modifications at the atomic level is s… ▽ More Understanding the effects of atomic structure modification in hematite photoanodes is essential for the rational design of high-efficiency functionalizations. Recently it was found that interface modification with Sn/Sb segregates considerably increases hematite photocatalytic efficiency. However, the understanding of the different electronic effects of these modifications at the atomic level is still lacking. This letter describes the segregation effects of two different dopants-Sn and Sb-on both the solid-solid (grain-boundaries) and solid-liquid interfaces (surfaces) of hematite. Within an ab-initio approach, we quantitatively extract the potential barrier reduction on polycrystalline interfaces due to the dopant, which causes an increase in the inter-grain electron transport. Concomitantly, the dopants' segregation on hematite surfaces results in a decrease of the oxygen vacancy formation energy. Such vacancies lead to the experimentally observed rise of the flat-band potential. The comprehension of the electronic effects of dopants on both types of interfaces explains the experimental peak efficiency of interface-modified hematite with dopant segregates, also enabling the control and design of interfaces for different higher-efficiency applications. △ Less

Submitted 3 May, 2021; originally announced May 2021.

Journal ref: Appl. Phys. Lett. 118, 201602 (2021)

Bandgap evolution in nanographene assemblies

Authors: F. Crasto de Lima, A. Fazzio

Abstract: Recently cycloarene has been experimentally obtained in a self-assembled structure, forming graphene-like monoatomic layered systems. Here, we establish the bandgap engineering/prediction in cycloarene assemblies within a combination of density functional theory and tight-binding Hamiltonians. Our results show a weak dependence of the gap with the assembly geometry, contrasting a strong dependence… ▽ More Recently cycloarene has been experimentally obtained in a self-assembled structure, forming graphene-like monoatomic layered systems. Here, we establish the bandgap engineering/prediction in cycloarene assemblies within a combination of density functional theory and tight-binding Hamiltonians. Our results show a weak dependence of the gap with the assembly geometry, contrasting a strong dependence with the inter-molecule bond density. We derived a effective model that allows the interpretation of the arising energy gap for general particle-hole symmetric molecular arranges based on inter-molecular bond strength. △ Less

Submitted 22 April, 2021; v1 submitted 5 January, 2021; originally announced January 2021.

Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb

Authors: Shouvik Chatterjee, Felipe Crasto de Lima, John A. Logan, Yuan Fang, Hadass Inbar, Aranya Goswami, Connor Dempsey, Shoaib Khalid, Tobias Brown-Heft, Yu-Hao Chang, Taozhi Guo, Daniel Pennacchio, Nathaniel Wilson, Jason Dong, Shalinee Chikara, Alexey Suslov, Alexei V. Fedorov, Dan Read, Jennifer Cano, Anderson Janotti, Christopher J. Palmstrom

Abstract: Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers we controll… ▽ More Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers we controllably tune the LMR behavior in Pt1-xAuxLuSb into distinct plateaus in Hall resistance, which we show arise from a quantum Hall phase. This allowed us to reveal how smearing of the Landau levels, which otherwise give rise to a quantum Hall phase, results in an LMR behavior due to strong interaction between the TSS with a positive g-factor and the bulk carriers. We establish that controlling the coupling strength between the surface and the bulk carriers in topological materials can bring about dramatic changes in their magnetotransport behavior. In addition, our work outlines a strategy to reveal macroscopic physical observables of TSS in compounds with a semi-metallic bulk band structure, as is the case in multi-functional Heusler compounds, thereby opening up opportunities for their utilization in hybrid quantum structures. △ Less

Submitted 3 January, 2022; v1 submitted 23 December, 2020; originally announced December 2020.

Comments: 11 pages, 5 figures. Supplementary Material contains 6 sections and 16 figures

Journal ref: Physical Review Materials, 5, 124207 (2021)

Emergent quasiparticles in Euclidean tilings

Authors: F. Crasto de Lima, A. Fazzio

Abstract: Material's geometrical structure is a fundamental part of their properties. The honeycomb geometry of graphene is responsible for the arising of its Dirac cone, while the kagome and Lieb lattice hosts flat bands and pseudospin-1 Dirac dispersion. These features seem to be particular for few 2D systems rather than a common occurrence. Given this correlation between structure and properties, explori… ▽ More Material's geometrical structure is a fundamental part of their properties. The honeycomb geometry of graphene is responsible for the arising of its Dirac cone, while the kagome and Lieb lattice hosts flat bands and pseudospin-1 Dirac dispersion. These features seem to be particular for few 2D systems rather than a common occurrence. Given this correlation between structure and properties, exploring new geometries can lead to unexplored states and phenomena. Kepler is the pioneer of the mathematical tiling theory, describing ways of filing the euclidean plane with geometrical forms in its book {\it Harmonices Mundi}. In this letter, we characterize $1255$ lattices composed of the euclidean plane's k-uniform tiling, with its intrinsic properties unveiled - this class of arranged tiles present high-degeneracy points, exotic quasiparticles, and flat bands as a common feature. Here, we present aid for experimental interpretation and prediction of new 2D systems. △ Less

Submitted 25 November, 2020; v1 submitted 22 November, 2020; originally announced November 2020.

Journal ref: Nanoscale, 2021,13, 5270-5274

Jacutingaite-family: a class of topological materials

Authors: F. Crasto de Lima, R. H. Miwa, A. Fazzio

Abstract: Jacutingate, a recently discovered Brazilian naturally occurring mineral, has shown to be the first experimental realization of the Kane-Mele topological model. In this letter we have unveiled a class of materials $M_2NX_3$ ($M$=Ni, Pt, Pd; $N$=Zn, Cd, Hg; and $X$=S, Se, Te), sharing jacutingaite's key features, i.e., high stability, and topological phase. By employing first-principles calculation… ▽ More Jacutingate, a recently discovered Brazilian naturally occurring mineral, has shown to be the first experimental realization of the Kane-Mele topological model. In this letter we have unveiled a class of materials $M_2NX_3$ ($M$=Ni, Pt, Pd; $N$=Zn, Cd, Hg; and $X$=S, Se, Te), sharing jacutingaite's key features, i.e., high stability, and topological phase. By employing first-principles calculations we extensively characterize the energetic stability of this class while showing a common occurrence of the Kane-Mele topological phase. Here we found Pt-based materials surpassing jacutingaite's impressive topological gap and lower exfoliation barrier while retaining its stability. △ Less

Submitted 29 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. B 102, 235153 (2020)

Electronic correlations in the semiconducting half-Heusler compound FeVSb

Authors: Estiaque H. Shourov, Patrick J. Strohbeen, Dongxue Du, Abhishek Sharan, Felipe C. de Lima, Fanny Rodolakis, Jessica McChesney, Vincent Yannello, Anderson Janotti, Turan Birol, Jason K. Kawasaki

Abstract: Electronic correlations are crucial to the low energy physics of metallic systems with localized $d$ and $f$ states; however, their effect on band insulators and semiconductors is typically negligible. Here, we measure the electronic structure of the half-Heusler compound FeVSb, a band insulator with filled shell configuration of 18 valence electrons per formula unit ($s^2 p^6 d^{10}$). Angle-reso… ▽ More Electronic correlations are crucial to the low energy physics of metallic systems with localized $d$ and $f$ states; however, their effect on band insulators and semiconductors is typically negligible. Here, we measure the electronic structure of the half-Heusler compound FeVSb, a band insulator with filled shell configuration of 18 valence electrons per formula unit ($s^2 p^6 d^{10}$). Angle-resolved photoemission spectroscopy (ARPES) reveals a mass renormalization of $m^{*}/m_{bare}= 1.4$, where $m^{*}$ is the measured effective mass and $m_{bare}$ is the mass from density functional theory (DFT) calculations with no added on-site Coulomb repulsion. Our measurements are in quantitative agreement with dynamical mean field theory (DMFT) calculations, highlighting the many-body origin of the mass renormalization. This mass renormalization lies in dramatic contrast to other filled shell intermetallics, including the thermoelectric materials CoTiSb and NiTiSn; and has a similar origin to that in FeSi, where Hund's coupling induced fluctuations across the gap can explain a dynamical self-energy and correlations. Our work calls for a re-thinking of the role of correlations and Hund's coupling in intermetallic band insulators. △ Less

Submitted 24 September, 2020; v1 submitted 24 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. B 103, 045134 (2021)

Simulation of XANES spectroscopy and the calculation of total energies for N-heterocyclic carbenes on Au(111)

Authors: Felipe Crasto de Lima, Adalberto Fazzio, Alastair B. McLean, Roberto H. Miwa

Abstract: It has recently been demonstrated that N-heterocyclic carbenes (NHCs) form self-assembled monolayers (SAMs) on metal surfaces. Consequently, it is important to both characterize and understand their binding modes to fully exploit NHCs in functional surface systems. To assist with this effort, we have performed {\it first-principles} total energy calculations for NHCs on Au(111) and simulations of… ▽ More It has recently been demonstrated that N-heterocyclic carbenes (NHCs) form self-assembled monolayers (SAMs) on metal surfaces. Consequently, it is important to both characterize and understand their binding modes to fully exploit NHCs in functional surface systems. To assist with this effort, we have performed {\it first-principles} total energy calculations for NHCs on Au(111) and simulations of X-ray absorption near edge structure (XANES). The NHCs we have considered are N,N-dimethyl-, N,N-diethyl-, N,N-diisopropylbenzimidazolylidene ($^B$NHC$^X$, with X=Me, Et, and iPr, respectively) and the bis-$^B$NHC$^X$ complexes with Au derived from these molecules. We present a comprehensive analysis of the energetic stability of both the $^B$NHC$^X$ and the complexes on Au(111) and, for the former, examine the role of the wing group in determining the attachment geometry. Further structural characterization is performed by calculating the nitrogen K-edge X-ray absorption spectra. Our simulated XANES results give insight into (i) the relationship between the $^B$NHC$^X$/Au geometry and the N($1s$) $\rightarrow$ $π^\ast/σ^\ast$, pre-edge/near-edge, absorption intensities, and (ii) the contributions of the molecular deformation and molecule-surface electronic interaction to the XANES spectrum. Our simulations are compared with recent experimental results. △ Less

Submitted 20 July, 2020; originally announced July 2020.

Engineering metal-$sp_{xy}$ Dirac bands on the oxidized SiC surface

Authors: F. Crasto de Lima, R. H. Miwa

Abstract: The ability to construct 2D systems, beyond materials natural formation, enriches the search and control capability of new phenomena. For instance, the synthesis of topological lattices of vacancies on metal surfaces through scanning tunneling microscopy. In the present study we demonstrate that metal atoms encaged in silicate adlayer on silicon carbide is an interesting platform for lattices desi… ▽ More The ability to construct 2D systems, beyond materials natural formation, enriches the search and control capability of new phenomena. For instance, the synthesis of topological lattices of vacancies on metal surfaces through scanning tunneling microscopy. In the present study we demonstrate that metal atoms encaged in silicate adlayer on silicon carbide is an interesting platform for lattices design, providing a ground to experimentally construct tight-binding models on an insulating substrate. Based on the density functional theory, we have characterized the energetic and the electronic properties of 2D metal lattices embedded in the silica adlayer. We show that the characteristic band structures of those lattices are ruled by surface states induced by the metal-$s$ orbitals coupled by the host-$p_{xy}$ states; giving rise to $sp_{xy}$ Dirac bands neatly lying within the energy gap of the semiconductor substrate. △ Less

Submitted 29 January, 2020; originally announced January 2020.

Journal ref: Nano Letters (2020) 10.1021/acs.nanolett.0c01111

Strain-induced phase transition in CrI$_{3}$ bilayers

Authors: Andrea Leon, J. W. González, J. Mejía-López, F. Crasto de Lima, E. Suárez Morell

Abstract: A monolayer of CrI$_3$ is a two-dimensional crystal that in its equilibrium configuration is a ferromagnetic semiconductor, however, two coupled layers can be ferromagnetic or antiferromagnetic depending on the stacking. We study the magnetic phase diagram upon the strain of the antiferromagnetically coupled bilayer with C2/m symmetry. We found that strain may be an efficient tool to tune the magn… ▽ More A monolayer of CrI$_3$ is a two-dimensional crystal that in its equilibrium configuration is a ferromagnetic semiconductor, however, two coupled layers can be ferromagnetic or antiferromagnetic depending on the stacking. We study the magnetic phase diagram upon the strain of the antiferromagnetically coupled bilayer with C2/m symmetry. We found that strain may be an efficient tool to tune the magnetic phase of the structure. A tensile strain stabilizes the antiferromagnetic phase, while a compressive strain turns the system ferromagnetic. We understood that behavior by looking at the relative displacement between layers due to the strain. We also study the evolution of the magnetic anisotropy, the magnetic exchange coupling between Cr atoms, and how the Curie temperature is affected by the strain. △ Less

Submitted 21 February, 2020; v1 submitted 21 November, 2019; originally announced November 2019.

Comments: 6 pages, 5 figures

Journal ref: 2D Materials (2020)

High-degeneracy points protected by site-permutation symmetries

Authors: F. Crasto de Lima, G. J. Ferreira

Abstract: Space group symmetries dictate the energy degeneracy of quasiparticles (e.g., electronic, photonic) in crystalline structures. For spinless systems, there can only be double or triple degeneracies protected by these symmetries, while other degeneracies are usually taken as \textit{accidental}. In this Letter we show that it is possible to design higher degeneracies exploring site permutation symme… ▽ More Space group symmetries dictate the energy degeneracy of quasiparticles (e.g., electronic, photonic) in crystalline structures. For spinless systems, there can only be double or triple degeneracies protected by these symmetries, while other degeneracies are usually taken as \textit{accidental}. In this Letter we show that it is possible to design higher degeneracies exploring site permutation symmetries. These design principles are shown to be satisfied in previously studied lattices, and new structures are proposed with three, four and five degeneracy points for spinless systems. The results are general and apply to different quasiparticle models. Here, we focus on a tight-binding approach for the electronic case as a proof of principle. The resulting high-degeneracy points are protected by the site-permutation symmetries, yielding pseudospin-1 and -2 Dirac fermions. The strategy proposed here can be used to design lattices with high-degeneracy points in electronic (e.g. metal-organic frameworks), photonic, phononic, magnonic and cold-atom systems. △ Less

Submitted 13 January, 2020; v1 submitted 26 October, 2019; originally announced October 2019.

Journal ref: Phys. Rev. B 101, 041107 (2020)

Topological flat band, Dirac fermions and quantum spin Hall phase in 2D Archimedean lattices

Authors: F. Crasto de Lima, Gerson J. Ferreira, R. H. Miwa

Abstract: Materials with designed properties arises in a synergy between theoretical and experimental approaches. In this study we explore the set of Archimedean lattices forming a guidance to its electronic properties and topological phases. Within these lattices, rich electronic structure emerge forming type-I and II Dirac fermions, topological flat bands and high-degeneracy points with linear and flat di… ▽ More Materials with designed properties arises in a synergy between theoretical and experimental approaches. In this study we explore the set of Archimedean lattices forming a guidance to its electronic properties and topological phases. Within these lattices, rich electronic structure emerge forming type-I and II Dirac fermions, topological flat bands and high-degeneracy points with linear and flat dispersions. Employing a tight-binding model, with spin-orbit coupling, we characterize a quantum spin Hall (QSH) phase in all Archimedean lattices. Our discussion is validated within density functional theory calculations, where we show the characteristic bands of the studied lattices arising in 2D carbon allotropes. △ Less

Submitted 14 August, 2019; originally announced August 2019.

Journal ref: Phys. Chem. Chem. Phys., 2019

Double flat bands in kagome twisted bilayers

Authors: F. Crasto de Lima, R. H. Miwa, E. Suárez Morell

Abstract: We have studied how a generic bilayer kagome lattice behave upon layer rotation. We employed a Tight Binding model with one orbital per site and found (i) for low rotational angles, and at low energies, the same flat bands structure like in twisted bilayer graphene; though, for a larger value of the magic angle. Moreover, (ii) at high energies, due to the superstructure symmetry regions, we found… ▽ More We have studied how a generic bilayer kagome lattice behave upon layer rotation. We employed a Tight Binding model with one orbital per site and found (i) for low rotational angles, and at low energies, the same flat bands structure like in twisted bilayer graphene; though, for a larger value of the magic angle. Moreover, (ii) at high energies, due to the superstructure symmetry regions, we found the characteristics three band dispersion of the kagome lattice. In the latter, its band width decreases for lower angles confining them within a few meV. Therefore, we found in twisted kagome lattice the coexistence of two sets of flat bands in different energies and lying in different spatial regions of the bilayer system. △ Less

Submitted 17 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. B 100, 155421 (2019)

Orbital pseudospin-momentum locking in two-dimensional chiral borophene

Authors: Felipe Crasto de Lima, Gerson J. Ferreira, Roberto H. Miwa

Abstract: Recently, orbital-textures have been found in Rashba and topological insulator (TI) surface states as a result of the spin-orbit coupling (SOC). Here, we predict a $p_x/p_y$ orbital texture, in linear dispersive Dirac bands, arising at the K/K' points of $χ$-$h_0$ borophene chiral monolayer. Combining first-principles calculations with effective hamiltonians, we show that the orbital pseudospin ha… ▽ More Recently, orbital-textures have been found in Rashba and topological insulator (TI) surface states as a result of the spin-orbit coupling (SOC). Here, we predict a $p_x/p_y$ orbital texture, in linear dispersive Dirac bands, arising at the K/K' points of $χ$-$h_0$ borophene chiral monolayer. Combining first-principles calculations with effective hamiltonians, we show that the orbital pseudospin has its direction locked with the momentum in a similar way as TIs' spin-textures. Additionally, considering a layer pseudospin degree of freedom, this lattice allows stackings of layers with equivalent or opposite chiralities. In turn, we show a control of the orbital textures and layer localization through the designed stacking and external electric field. For instance, for the opposite chirality stacking, the electric field allows for an on/off switch of the orbital-textured Dirac cone. △ Less

Submitted 7 August, 2019; v1 submitted 9 July, 2019; originally announced July 2019.

Journal ref: Nano Letters 2019

Layertronic control of topological states in multilayer metal-organic frameworks

Authors: F. Crasto de Lima, G. J. Ferreira, R. H. Miwa

Abstract: We investigate the layer localization control of two-dimensional states in multilayer metal-organic frameworks (MOFs). For finite stackings of (NiC4S4)3 MOFs, the weak van der Waals coupling between adjacent layers leads to a Fermi level dependent distribution of the electronic states in the monolayers. Such distribution is reflected in the topological edge states of multilayer nanoribbons. Moreov… ▽ More We investigate the layer localization control of two-dimensional states in multilayer metal-organic frameworks (MOFs). For finite stackings of (NiC4S4)3 MOFs, the weak van der Waals coupling between adjacent layers leads to a Fermi level dependent distribution of the electronic states in the monolayers. Such distribution is reflected in the topological edge states of multilayer nanoribbons. Moreover, by applying an external electric field, parallel to the stacking direction, the spacial localization of the electronic states can be controlled for a chosen Fermi energy. This localization behavior is studied comparing density functional theory calculations with a kagome lattice tight-binding model. Furthermore, for infinite stacked nanoribbons, a new V-gutter Dirac state is found in the side surfaces, which allows anisotropic current control by tuning the Fermi energy. Our results can be immediately extended to other kagome MOFs with eclipsed stackings, introducing a new degree of freedom (layer localization) to materials design. △ Less

Submitted 12 June, 2019; v1 submitted 8 March, 2019; originally announced March 2019.

Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films

Authors: Shouvik Chatterjee, Shoaib Khalid, Hadass S. Inbar, Aranya Goswami, Felipe Crasto de Lima, Abhishek Sharan, Fernando P. Sabino, Tobias L. Brown-Heft, Yu-Hao Chang, Alexei V. Fedorov, Dan Read, Anderson Janotti, Christopher J. Palmstrøm

Abstract: Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-resolved photoemssion spectroscopy, and hybrid density functional theory we have unveiled the bandstructure of LuSb, where electron-hole compensation i… ▽ More Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-resolved photoemssion spectroscopy, and hybrid density functional theory we have unveiled the bandstructure of LuSb, where electron-hole compensation is identified as a mechanism responsible for large magnetoresistance in this topologically trivial compound. In contrast to bulk single crystal analogues, quasi-two-dimensional behavior is observed in our thin films for both electron and holelike carriers, indicative of dimensional confinement of the electronic states. Introduction of defects through growth parameter tuning results in the appearance of quantum interference effects at low temperatures, which has allowed us to identify the dominant inelastic scattering processes and elucidate the role of spin-orbit coupling. Our findings open up new possibilities of band structure engineering and control of transport properties in rare-earth monopnictides via epitaxial synthesis. △ Less

Submitted 25 March, 2019; v1 submitted 31 January, 2019; originally announced February 2019.

Comments: 20 pages, 12 figures; includes supplementary information

Journal ref: Phys. Rev. B 99, 125134 (2019)

Large Disparity Between Optical and Fundamental Band Gaps in Layered In2Se3

Authors: Wei Li, Fernando P. Sabino, Felipe Crasto de Lima, Tianshi Wang, Roberto H. Miwa, Anderson Janotti

Abstract: In$_2$Se$_3$ is a semiconductor material that can be stabilized in different crystal structures (at least one 3D and several 2D layered structures have been reported) with diverse electrical and optical properties. This feature has plagued its characterization over the years, with reported band gaps varying in an unacceptable range of 1 eV. Using first-principles calculations based on density func… ▽ More In$_2$Se$_3$ is a semiconductor material that can be stabilized in different crystal structures (at least one 3D and several 2D layered structures have been reported) with diverse electrical and optical properties. This feature has plagued its characterization over the years, with reported band gaps varying in an unacceptable range of 1 eV. Using first-principles calculations based on density functional theory and the HSE06 hybrid functional, we investigated the structural and electronic properties of four layered phases of In$_2$Se$_3$, addressing their relative stability and the nature of their fundamental band gaps, i.e., direct {\em versus} indirect. Our results show large disparities between fundamental and optical gaps. The absorption coefficients are found to be as high as that in direct-gap III-V semiconductors. The band alignment with respect to conventional semiconductors indicate a tendency to $n$-type conductivity, explaining recent experimental observations. △ Less

Submitted 4 June, 2018; originally announced June 2018.

Journal ref: Phys. Rev. B 98, 165134 (2018)

Quantum anomalous Hall effect in metal-bis(dithiolene), magnetic properties, do** and interfacing graphene

Authors: F. Crasto de Lima, G. J. Ferreira, R. H. Miwa

Abstract: The realization of the Quantum anomalous Hall effect (QAHE) in two dimensional (2D) metal organic frameworks (MOFs), (MC$_4$S$_4$)$_3$ with M = Mn, Fe, Co, Ru and Rh, has been investigated based on a combination of first-principles calculations and tight binding models. Our results for the magnetic anisotropy energy (MAE) reveal that the out-of-plane (in-plane) magnetization is favored for M = Mn,… ▽ More The realization of the Quantum anomalous Hall effect (QAHE) in two dimensional (2D) metal organic frameworks (MOFs), (MC$_4$S$_4$)$_3$ with M = Mn, Fe, Co, Ru and Rh, has been investigated based on a combination of first-principles calculations and tight binding models. Our results for the magnetic anisotropy energy (MAE) reveal that the out-of-plane (in-plane) magnetization is favored for M = Mn, Fe, and Ru (Co, and Rh). Given the structural symmetry of (MC$_4$S$_4$)$_3$, the QAHE takes place only for M = Mn, Fe and Ru. Such a quantum anomalous Hall phase has been confirmed through the calculation of the Chern number, and examining the formation of topologically protected (metallic) edge states. Further electron ($n$-type) do** of the MOFs has been done in order to place the Fermi level within the non-trivial energy gap; where we find that in (RuC$_4$S$_4$)$_3$, in addition to the up-shift of the Fermi level, the MAE energy increases by 40\%. Finally, we show that in MOF/graphene (vdW) interfaces, the Fermi level tunning can be done with an external electric field, which controls the charge transfer at the MOF/graphene interface, giving rise to switchable topologically protected edge currents in MOFs. △ Less

Submitted 30 May, 2018; originally announced May 2018.

Confinement and Fermion Doubling Problem in Dirac-like Hamiltonians

Authors: B. Messias de Resende, F. Crasto de Lima, R. H. Miwa, E. Vernek, G. J. Ferreira

Abstract: We investigate the interplay between confinement and the fermion doubling problem in Dirac-like Hamiltonians. Individually, both features are well known. First, simple electrostatic gates do not confine electrons due to the Klein tunneling. Second, a typical lattice discretization of the first-order derivative $k \rightarrow -i\partial_x$ skips the central point and allow spurious low-energy, high… ▽ More We investigate the interplay between confinement and the fermion doubling problem in Dirac-like Hamiltonians. Individually, both features are well known. First, simple electrostatic gates do not confine electrons due to the Klein tunneling. Second, a typical lattice discretization of the first-order derivative $k \rightarrow -i\partial_x$ skips the central point and allow spurious low-energy, highly oscillating solutions known as fermion doublers. While a no-go theorem states that the doublers cannot be eliminated without artificially breaking a symmetry, here we show that the symmetry broken by the Wilson's mass approach is equivalent to the enforcement of hard-wall boundary conditions, thus making the no-go theorem irrelevant when confinement is foreseen. We illustrate our arguments by calculating the following: (i) the band structure and transport properties across thin films of the topological insulator Bi$_2$Se$_3$, for which we use ab-initio density functional theory calculations to justify the model; and (ii) the band structure of zigzag graphene nanoribbons. △ Less

Submitted 25 October, 2017; v1 submitted 11 August, 2017; originally announced August 2017.

Comments: 10 pages, 9 figures

Journal ref: Phys. Rev. B 96, 161113 (2017)

Tuning the topological states in metal-organic bilayers

Authors: F. Crasto de Lima, Gerson J. Ferreira, R. H. Miwa

Abstract: We have investigated the energetic stability and the electronic properties of metal-organic topological insulators bilayers (BLs), $(MC_4S_4)_3$-BL, with M=Ni and Pt, using first-principles calculations and tight-binding model. Our findings show that $(MC_4S_4)_3$-BL is an appealing platform to perform electronic band structure engineering, based on the topologically protected chiral edge states.… ▽ More We have investigated the energetic stability and the electronic properties of metal-organic topological insulators bilayers (BLs), $(MC_4S_4)_3$-BL, with M=Ni and Pt, using first-principles calculations and tight-binding model. Our findings show that $(MC_4S_4)_3$-BL is an appealing platform to perform electronic band structure engineering, based on the topologically protected chiral edge states. The energetic stability of the BLs is ruled by van der Waals interactions; being the AA stacking the energetically most stable one. The electronic band structure is characterized by a combination of bonding and anti-bonding kagome band sets (KBSs), revealing that $(NiC_4S_4)_3$-BL presents a Z$_2$-metallic phase, whereas $(PtC_4S_4)_3$-BL may present both Z$_2$-metallic phase or quantum spin Hall phase. Those non-trivial topological states were confirmed by the formation of chiral edge states in $(MC_4S_4)_3$-BL nanoribbons. We show that the localization of the edge states can be controlled with a normal external electric field, breaking the mirror symmetry. Hence, the sign of electric field selects in which layer each set of edge states are located. Such a control on the (layer) localization, of the topological edge states, bring us an additional and interesting degree of freedom to control the transport properties in layered metal-organic topological insulator. △ Less

Submitted 30 September, 2017; v1 submitted 25 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. B 96, 115426 (2017)