Showing 1–50 of 69 results for author: de Heer, W A

Ultra-high mobility semiconducting epitaxial graphene on silicon carbide

Authors: Jian Zhao, Peixun Ji, Yaqi Li, Rui Li, Kaiming Zhang, Hao Tian, Kaichen Yu, Boyue Bian, Luzhen Hao, Xue Xiao, Will Griffin, Noel Dudeck, Ramiro Moro, Lei Ma, Walt A. de Heer

Abstract: Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band gap and a sufficient mobility. It is well known that by evaporating silicon from commercial electronics grade silicon carbide crystals an epitaxial graphene la… ▽ More Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band gap and a sufficient mobility. It is well known that by evaporating silicon from commercial electronics grade silicon carbide crystals an epitaxial graphene layer forms on the surfaces [2]. The first epigraphene layer to form on the silicon terminated face, known as the buffer layer, is insulating. It is chemically bonded to the SiC and spectroscopic measurements [3] have identified semiconducting signatures on the microscopic domains. However, the bonding to the SiC is disordered and the mobilities are small. Here we demonstrate a quasi-equilibrium annealing method that produces macroscopic atomically flat terraces covered with a well ordered epigraphene buffer layer that has a 0.6 eV bandgap. Room temperature mobilities exceed 5000 cm2/Vs which is much larger than silicon and 20 times larger than the phonon scattering imposed limit of current 2D semiconductors. Critical for nanotechnology, its lattice is aligned with the SiC substrate, it is chemically, mechanically, and thermally robust, and it can be conventionally patterned and seamlessly connected to semimetallic epigraphene making semiconducting epigraphene ideally suited for nanoelectronics. △ Less

Submitted 23 August, 2023; originally announced August 2023.

Comments: Text and figures + supplemental information

Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition

Authors: James Gigliotti, Xin Li, Suresh Sundaram, Dogukan Deniz, Vladimir Prudkovskiy, Jean-Philippe Turmaud, Yiran Hu, Yue Hu, Frédéric Fossard, Jean-Sébastien Mérot, Annick Loiseau, Gilles Patriarche, Bokwon Yoon, Uzi Landman, Abdallah Ougazzaden, Claire Berger, Walt A. de Heer

Abstract: Realizing high-performance nanoelectronics requires control of materials at the nanoscale. Methods to produce high quality epitaxial graphene (EG) nanostructures on silicon carbide are known. The next step is to grow Van der Waals semiconductors on top of EG nanostructures. Hexagonal boron nitride (h-BN) is a wide bandgap semiconductor with a honeycomb lattice structure that matches that of graphe… ▽ More Realizing high-performance nanoelectronics requires control of materials at the nanoscale. Methods to produce high quality epitaxial graphene (EG) nanostructures on silicon carbide are known. The next step is to grow Van der Waals semiconductors on top of EG nanostructures. Hexagonal boron nitride (h-BN) is a wide bandgap semiconductor with a honeycomb lattice structure that matches that of graphene, making it ideally suited for graphene-based nanoelectronics. Here, we describe the preparation and characterization of multilayer h-BN grown epitaxially on EG using a migration-enhanced metalorganic vapor phase epitaxy process. As a result of the lateral epitaxial deposition (LED) mechanism, the grown h-BN/EG heterostructures have highly ordered epitaxial interfaces, as desired in order to preserve the transport properties of pristine graphene. Atomic scale structural and energetic details of the observed row-by-row, growth mechanism of the 2D epitaxial h-BN film are analyzed through first-principles simulations, demonstrating one-dimensional nucleation-free-energy-barrierless growth. This industrially relevant LED process can be applied to a wide variety of van der Waals materials. △ Less

Submitted 22 November, 2020; originally announced November 2020.

Journal ref: ACS Nano 2020, 14, 12962

Non-invasive nanoscale potentiometry and ballistic transport in epigraphene nanoribbons

Authors: A. De Cecco, V. S. Prudkovskiy, D. Wander, R. Ganguly C. Berger, W. A. de Heer, H. Courtois, C. B. Winkelmann

Abstract: The recent observation of non-classical electron transport regimes in two-dimensional materials has called for new high-resolution non-invasive techniques to locally probe electronic properties. We introduce a novel hybrid scanning probe technique to map the local resistance and electrochemical potential with nm- and $μ$V resolution, and we apply it to study epigraphene nanoribbons grown on the si… ▽ More The recent observation of non-classical electron transport regimes in two-dimensional materials has called for new high-resolution non-invasive techniques to locally probe electronic properties. We introduce a novel hybrid scanning probe technique to map the local resistance and electrochemical potential with nm- and $μ$V resolution, and we apply it to study epigraphene nanoribbons grown on the sidewalls of SiC substrate steps. Remarkably, the potential drop is non uniform along the ribbons, and $μ$m-long segments show no potential variation with distance. The potential maps are in excellent agreement with measurements of the local resistance. This reveals ballistic transport in ambient condition, compatible with micrometer-long room-temperature electronic mean free paths. △ Less

Submitted 25 February, 2020; originally announced February 2020.

Journal ref: Nano Lett. 20, 3786 (2020)

An epitaxial graphene platform for zero-energy edge state nanoelectronics

Authors: Vladimir S. Prudkovskiy, Yiran Hu, Yue Hu, Kaimin Zhang, Peixuan Ji, Grant Nunn, Jian Zhao, Chenqian Shi, Antonio Tejeda, David Wander, Alessandro De Cecco, Clemens B. Winkelmann, Yuxuan Jiang, Tianhao Zhao, Katsunori Wakabayashi, Zhigang Jiang, Lei Ma, Claire Berger, Walt A. de Heer

Abstract: Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge… ▽ More Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater that the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon-ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics. △ Less

Submitted 25 October, 2022; v1 submitted 8 October, 2019; originally announced October 2019.

Comments: File contains article and supplementary. Nature Communications (in print)

Journal ref: Nature Communications (2022) 13, 7814

Valley and Zeeman Splittings in Multilayer Epitaxial Graphene Revealed by Circular Polarization Resolved Magneto-infrared Spectroscopy

Authors: Y. Jiang, Z. Lu, J. Gigliotti, A. Rustagi, L. Chen, C. Berger, W. A. de Heer, C. J. Stanton, D. Smirnov, Z. Jiang

Abstract: Circular polarization resolved magneto-infrared studies of multilayer epitaxial graphene (MEG) are performed using tunable quantum cascade lasers in high magnetic fields up to 17.5 T. Landau level (LL) transitions in the monolayer and bilayer graphene inclusions of MEG are resolved, and considerable electron-hole asymmetry is observed in the extracted electronic band structure. For monolayer graph… ▽ More Circular polarization resolved magneto-infrared studies of multilayer epitaxial graphene (MEG) are performed using tunable quantum cascade lasers in high magnetic fields up to 17.5 T. Landau level (LL) transitions in the monolayer and bilayer graphene inclusions of MEG are resolved, and considerable electron-hole asymmetry is observed in the extracted electronic band structure. For monolayer graphene, a four-fold splitting of the $n=0$ to $n=1$ LL transition is evidenced and attributed to the lifting of the valley and spin degeneracy of the zeroth LL and the broken electron-hole symmetry. The magnetic field dependence of the splitting further reveals its possible mechanisms. The best fit to experimental data yields effective $g$-factors, $g^*_{VS}=6.7$ and $g^*_{ZS}=4.8$, for the valley and Zeeman splitting, respectively. △ Less

Submitted 14 October, 2019; v1 submitted 3 September, 2019; originally announced September 2019.

Comments: One reference added in this arxiv version

Journal ref: Nano Lett. 19, 7043 (2019)

Slow noncollinear Coulomb scattering in the vicinity of the Dirac point in graphene

Authors: J. C. König-Otto, M. Mittendorff, T. Winzer, F. Kadi, E. Malic, A. Knorr, C. Berger, W. A. de Heer, A. Pashkin, H. Schneider, M. Helm, S. Winnerl

Abstract: The Coulomb scattering dynamics in graphene in energetic proximity to the Dirac point is investigated by polarization resolved pump-probe spectroscopy and microscopic theory. Collinear Coulomb scattering rapidly thermalizes the carrier distribution in k-directions pointing radially away from the Dirac point. Our study reveals, however, that in almost intrinsic graphene full thermalization in all d… ▽ More The Coulomb scattering dynamics in graphene in energetic proximity to the Dirac point is investigated by polarization resolved pump-probe spectroscopy and microscopic theory. Collinear Coulomb scattering rapidly thermalizes the carrier distribution in k-directions pointing radially away from the Dirac point. Our study reveals, however, that in almost intrinsic graphene full thermalization in all directions relying on noncollinear scattering is much slower. For low photon energies, carrier-optical-phonon processes are strongly suppressed and Coulomb mediated noncollinear scattering is remarkably slow, namely on a ps timescale. This effect is very promising for infrared and THz devices based on hot carrier effects. △ Less

Submitted 3 May, 2018; originally announced May 2018.

Symmetry-breaking supercollisions in Landau-quantized graphene

Authors: Florian Wendler, Martin Mittendorff, Jacob C. König-Otto, Samuel Brem, Claire Berger, Walter A. de Heer, Roman Böttger, Harald Schneider, Manfred Helm, Stephan Winnerl, Ermin Malic

Abstract: Recent pump-probe experiments performed on graphene in a perpendicular magnetic field have revealed carrier relaxation times ranging from picoseconds to nanoseconds depending on the quality of the sample. To explain this surprising behavior, we propose a novel symmetry-breaking defect-assisted relaxation channel. This enables scattering of electrons with single out-of-plane phonons, which drastica… ▽ More Recent pump-probe experiments performed on graphene in a perpendicular magnetic field have revealed carrier relaxation times ranging from picoseconds to nanoseconds depending on the quality of the sample. To explain this surprising behavior, we propose a novel symmetry-breaking defect-assisted relaxation channel. This enables scattering of electrons with single out-of-plane phonons, which drastically accelerate the carrier scattering time in low-quality samples. The gained insights provide a strategy for tuning the carrier relaxation time in graphene and related materials by orders of magnitude. △ Less

Submitted 25 January, 2018; originally announced January 2018.

Journal ref: Wendler, Florian, et al. "Symmetry-Breaking Supercollisions in Landau-Quantized Graphene." Physical review letters 119.6 (2017): 067405

Epigraphene : epitaxial graphene on silicon carbide

Authors: Claire Berger, Edward H. Conrad, Walt A. de Heer

Abstract: This article presents a review of epitaxial graphene on silicon carbide, from fabrication to properties, put in the context of other forms of graphene. This article presents a review of epitaxial graphene on silicon carbide, from fabrication to properties, put in the context of other forms of graphene. △ Less

Submitted 2 April, 2017; originally announced April 2017.

Comments: 46 pages, 322 references, 35 figures. Submitted December 2015

Epitaxial graphene on SiC: 2D sheets, selective growth and nanoribbons

Authors: Claire Berger, Dogukan Deniz, Jamey Gigliotti, James Palmer, John Hankinson, Yiran Hu, Jean-Philippe Turmaud, Renaud Puybaret, Abdallah Ougazzaden, Anton Sidorov, Zhigang Jiang, Walt A. de Heer

Abstract: Epitaxial graphene grown on SiC by the confinement controlled sublimation method is reviewed, with an emphasis on multilayer and monolayer epitaxial graphene on the carbon face of 4H-SiC and on directed and selectively grown structures under growth-arresting or growth-enhancing masks. Recent developments in the growth of templated graphene nanostructures are also presented, as exemplified by tens… ▽ More Epitaxial graphene grown on SiC by the confinement controlled sublimation method is reviewed, with an emphasis on multilayer and monolayer epitaxial graphene on the carbon face of 4H-SiC and on directed and selectively grown structures under growth-arresting or growth-enhancing masks. Recent developments in the growth of templated graphene nanostructures are also presented, as exemplified by tens of micron long very well confined and isolated 20-40nm wide graphene ribbons. Scheme for large scale integration of ribbon arrays with Si wafer is also presented. △ Less

Submitted 27 November, 2016; originally announced November 2016.

Comments: 19 pages, 9 figures

Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics

Authors: Renaud Puybaret, Gilles Patriarche, Matthew B. Jordan, Suresh Sundaram, Youssef El Gmili, Jean-Paul Salvestrini, Paul L. Voss, Walt A. de Heer, Claire Berger, Abdallah Ougazzaden

Abstract: We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defective crystals in the heteroepitaxial growth of nitrides, and the high mobility graphene film can readily provide the back low-dissipative electrode in GaN-… ▽ More We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defective crystals in the heteroepitaxial growth of nitrides, and the high mobility graphene film can readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. The process consists in first growing a 5-8 graphene layers film on the C-face of 4H- SiC by confinement-controlled sublimation of silicon carbide. The graphene film is then patterned and arrays of 75-nanometer-wide openings are etched in graphene revealing the SiC substrate. 30-nanometer-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in openings patterned through graphene, with no nucleation on graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal hexagonal wurtzite. The GaN crystalline nanomesas have no threading dislocations, and do not show any V-pit. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene / silicon carbide platform. △ Less

Submitted 15 October, 2015; originally announced October 2015.

Comments: 7 pages, 5 figures

Electronic Cooling via Interlayer Coulomb Coupling in Multilayer Epitaxial Graphene

Authors: Momchil T. Mihnev, John R. Tolsma, Charles J. Divin, Dong Sun, Reza Asgari, Marco Polini, Claire Berger, Walt A. de Heer, Allan H. MacDonald, Theodore B. Norris

Abstract: In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron-phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlaye… ▽ More In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron-phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlayer bonding results in weak phonon-mediated thermal coupling between the layers. We demonstrate here, however, that Coulomb interactions between electrons in different layers of multilayer epitaxial graphene provide an important mechanism for interlayer thermal transport even though all electronic states are strongly confined within individual 2D layers. This effect is manifested in the relaxation dynamics of hot carriers in ultrafast time-resolved terahertz spectroscopy. We develop a theory of interlayer Coulomb coupling containing no free parameters that accounts for the experimentally observed trends in hot-carrier dynamics as temperature and the number of layers is varied. △ Less

Submitted 28 August, 2016; v1 submitted 25 July, 2015; originally announced July 2015.

Comments: 54 pages, 15 figures, uses documentclass{achemso}, M.T.M. and J.R.T. contributed equally to this work

Journal ref: Nat. Commun. 6, 8105 (2015)

SU(4) symmetry breaking revealed by magneto-optical spectroscopy in epitaxial graphene

Authors: Liang Z. Tan, Milan Orlita, Marek Potemski, James Palmer, Claire Berger, Walter A. de Heer, Steven G. Louie, Gérard Martinez

Abstract: Refined infrared magnetotransmission experiments have been performed in magnetic fields B up to 35 T on a series of multilayer epitaxial graphene samples. Following the main optical transition involving the n=0 Landau level (LL), we observe a new absorption transition increasing in intensity with magnetic fields B>26 T. Our analysis shows that this is a signature of the breaking of the SU(4) symme… ▽ More Refined infrared magnetotransmission experiments have been performed in magnetic fields B up to 35 T on a series of multilayer epitaxial graphene samples. Following the main optical transition involving the n=0 Landau level (LL), we observe a new absorption transition increasing in intensity with magnetic fields B>26 T. Our analysis shows that this is a signature of the breaking of the SU(4) symmetry of the n=0 LL. Using a quantitative model, we show that the only symmetry-breaking scheme consistent with our experiments is a charge density wave (CDW). △ Less

Submitted 22 June, 2015; originally announced June 2015.

Journal ref: Phys. Rev. B 91, 235122 (2015)

Anisotropy of excitation and relaxation of photogenerated Dirac electrons in graphene

Authors: Martin Mittendorff, Torben Winzer, Ermin Malic, Andreas Knorr, Claire Berger, Walter A. de Heer, Harald Schneider, Manfred Helm, Stephan Winnerl

Abstract: We investigate the polarization dependence of the carrier excitation and relaxation in epitaxial multilayer graphene. Degenerate pump-probe experiments with a temporal resolution of 30 fs are performed for different rotation angles of the pump-pulse polarization with respect to the polarization of the probe pulse. A pronounced dependence of the pump-induced transmission on this angle is found. It… ▽ More We investigate the polarization dependence of the carrier excitation and relaxation in epitaxial multilayer graphene. Degenerate pump-probe experiments with a temporal resolution of 30 fs are performed for different rotation angles of the pump-pulse polarization with respect to the polarization of the probe pulse. A pronounced dependence of the pump-induced transmission on this angle is found. It reflects a strong anisotropy of the pump-induced occupation of photogenerated carriers in momentum space even though the band structure is isotropic. Within 150 fs after excitation an isotropic carrier distribution is established. Our observations imply the predominant role of collinear scattering preserving the initially optically generated anisotropy in the carrier distribution. The experiments are well described by microscopic time-, momentum, and angle-resolved modelling, which allows us to unambiguously identify non-collinear carrier-phonon scattering to be the main relaxation mechanism giving rise to an isotropic distribution in the first hundred fs after optical excitation. △ Less

Submitted 20 December, 2013; originally announced December 2013.

Comments: Submitted to Nano Letters

Journal ref: Nano Lett., 2014, 14 (3)

Wafer bonding solution to epitaxial graphene - silicon integration

Authors: Rui Dong, Zelei Guo, James Palmer, Yike Hu, Ming Ruan, John Hankinson, Jan Kunc, Swapan K Bhattacharya, Claire Berger, Walt A. de Heer

Abstract: The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and subsequent graphene nano-patterning that degrades considerably the electronic mobility of nanopatterned graphene. Epitaxial graphene (EG) by contrast is grown on an es… ▽ More The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and subsequent graphene nano-patterning that degrades considerably the electronic mobility of nanopatterned graphene. Epitaxial graphene (EG) by contrast is grown on an essentially perfect crystalline (semi-insulating) surface, and graphene nanostructures with exceptional properties have been realized by a selective growth process on tailored SiC surface that requires no graphene patterning. However, the temperatures required in this structured growth process are too high for silicon technology. Here we demonstrate a new graphene to Si integration strategy, with a bonded and interconnected compact double-wafer structure. Using silicon-on-insulator technology (SOI) a thin monocrystalline silicon layer ready for CMOS processing is applied on top of epitaxial graphene on SiC. The parallel Si and graphene platforms are interconnected by metal vias. This method inspired by the industrial development of 3d hyper-integration stacking thin-film electronic devices preserves the advantages of epitaxial graphene and enables the full spectrum of CMOS processing. △ Less

Submitted 12 August, 2013; originally announced August 2013.

Comments: 15 pages, 7 figures

Journal ref: Journal of physics D 47, 094001 (2014)

Probing terahertz surface plasmon waves in graphene structures

Authors: Oleg Mitrofanov, Wenlong Yu, Robert J. Thompson, Yuxuan Jiang, Igal Brener, Wei Pan, Claire Berger, Walter A. de Heer, Zhigang Jiang

Abstract: Epitaxial graphene mesas and ribbons are investigated using terahertz (THz) nearfield microscopy to probe surface plasmon excitation and THz transmission properties on the sub-wavelength scale. The THz near-field images show variation of graphene properties on a scale smaller than the wavelength, and excitation of THz surface waves occurring at graphene edges, similar to that observed at metallic… ▽ More Epitaxial graphene mesas and ribbons are investigated using terahertz (THz) nearfield microscopy to probe surface plasmon excitation and THz transmission properties on the sub-wavelength scale. The THz near-field images show variation of graphene properties on a scale smaller than the wavelength, and excitation of THz surface waves occurring at graphene edges, similar to that observed at metallic edges. The Fresnel reflection at the substrate SiC/air interface is also found to be altered by the presence of graphene ribbon arrays, leading to either reduced or enhanced transmission of the THz wave depending on the wave polarization and the ribbon width. △ Less

Submitted 16 August, 2013; v1 submitted 28 July, 2013; originally announced July 2013.

Comments: accepted for publication in Applied Physics Letter

Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks

Authors: Renaud Puybaret, John Hankinson, James Palmer, Clement Bouvier, Abdallah Ougazzaden, Paul L Voss, Claire Berger, Walt A de Heer

Abstract: Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbide by the deposition of a 120 nm to 150nm-thick silicon nitride (SiN) mask prior to graphitization. In this process we find that areas covered by a Si-rich SiN mask have one to four more layers than non-masked areas. Conv… ▽ More Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbide by the deposition of a 120 nm to 150nm-thick silicon nitride (SiN) mask prior to graphitization. In this process we find that areas covered by a Si-rich SiN mask have one to four more layers than non-masked areas. Conversely N-rich SiN decreases the thickness by three layers. In both cases the mask decomposes before graphitization is completed. Graphene grown in masked areas show good quality as observed by Raman spectroscopy, atomic force microscopy (AFM) and transport data. By tailoring the growth parameters selective graphene growth and sub-micron patterns have been obtained. △ Less

Submitted 22 November, 2014; v1 submitted 23 July, 2013; originally announced July 2013.

Highly efficient spin transport in epitaxial graphene on SiC

Authors: Bruno Dlubak, Marie-Blandine Martin, Cyrile Deranlot, Bernard Servet, Stéphane Xavier, Richard Mattana, Mike Sprinkle, Claire Berger, Walt A. De Heer, Frédéric Petroff, Abdelmadjid Anane, Pierre Seneor, Albert Fert

Abstract: Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on h… ▽ More Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 μm. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen. △ Less

Submitted 5 July, 2013; originally announced July 2013.

Journal ref: B. Dlubak et al. Nature Physics 8 (2012) 557

A method to extract pure Raman spectrum of epitaxial graphene on SiC

Authors: Jan Kunc, Yike Hu, James Palmer, Claire Berger, Walter A. de Heer

Abstract: A method is proposed to extract pure Raman spectrum of epitaxial graphene on SiC by using a Non-negative Matrix Factorization. It overcomes problems of negative spectral intensity and poorly resolved spectra resulting from a simple subtraction of a SiC background from the experimental data. We also show that the method is similar to deconvolution, for spectra composed of multiple sub- micrometer a… ▽ More A method is proposed to extract pure Raman spectrum of epitaxial graphene on SiC by using a Non-negative Matrix Factorization. It overcomes problems of negative spectral intensity and poorly resolved spectra resulting from a simple subtraction of a SiC background from the experimental data. We also show that the method is similar to deconvolution, for spectra composed of multiple sub- micrometer areas, with the advantage that no prior information on the impulse response functions is needed. We have used this property to characterize the Raman laser beam. The method capability in efficient data smoothing is also demonstrated. △ Less

Submitted 1 July, 2013; originally announced July 2013.

Comments: 3 figures, regular paper

Magnetoplasmons in quasi-neutral epitaxial graphene nanoribbons

Authors: J. M. Poumirol, W. Yu, X. Chen, C. Berger, W. A. de Heer, M. L. Smith, T. Ohta, W. Pan, M. O. Goerbig, D. Smirnov, Z. Jiang

Abstract: We present infrared transmission spectroscopy study of the inter-Landau-level excitations in quasi-neutral epitaxial graphene nanoribbon arrays. We observed a substantial deviation in energy of the $L_{0(-1)}$$\to$$L_{1(0)}$ transition from the characteristic square root magnetic-field dependence of two-dimensional graphene. This deviation arises from the formation of upper-hybrid mode between the… ▽ More We present infrared transmission spectroscopy study of the inter-Landau-level excitations in quasi-neutral epitaxial graphene nanoribbon arrays. We observed a substantial deviation in energy of the $L_{0(-1)}$$\to$$L_{1(0)}$ transition from the characteristic square root magnetic-field dependence of two-dimensional graphene. This deviation arises from the formation of upper-hybrid mode between the Landau level transition and the plasmon resonance. In the quantum regime the hybrid mode exhibits a distinct dispersion relation, markedly different from that expected for conventional two-dimensional systems and highly doped graphene. △ Less

Submitted 29 June, 2013; v1 submitted 21 May, 2013; originally announced May 2013.

Journal ref: Phys. Rev. Lett. 110, 246803 (2013)

Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors

Authors: Zelei Guo, Rui Dong, Partha Sarathi Chakraborty, Nelson Lourenco, James Palmer, Yike Hu, Ming Ruan, John Hankinson, Jan Kunc, John D. Cressler, Claire Berger, Walt A. de Heer

Abstract: The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial grap… ▽ More The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene. Careful transistor design using a high κ dielectric T-gate and self-aligned contacts, further contributed to the record-breaking fmax. △ Less

Submitted 15 February, 2013; originally announced February 2013.

Journal ref: Nano letters 13 (3) 942-947 (2013)

Exceptional ballistic transport in epitaxial graphene nanoribbons

Authors: Jens Baringhaus, Ming Ruan, Frederik Edler, Antonio Tejeda, Muriel Sicot, Amina Taleb Ibrahimi, Zhigang Jiang, Edward Conrad, Claire Berger, Christoph Tegenkamp, Walt A. de Heer

Abstract: Graphene electronics has motivated much of graphene science for the past decade. A primary goal was to develop high mobility semiconducting graphene with a band gap that is large enough for high performance applications. Graphene ribbons were thought to be semiconductors with these properties, however efforts to produce ribbons with useful bandgaps and high mobility has had limited success. We sho… ▽ More Graphene electronics has motivated much of graphene science for the past decade. A primary goal was to develop high mobility semiconducting graphene with a band gap that is large enough for high performance applications. Graphene ribbons were thought to be semiconductors with these properties, however efforts to produce ribbons with useful bandgaps and high mobility has had limited success. We show here that high quality epitaxial graphene nanoribbons 40 nm in width, with annealed edges, grown on sidewall SiC are not semiconductors, but single channel room temperature ballistic conductors for lengths up to at least 16 micrometers. Mobilities exceeding one million corresponding to a sheet resistance below 1 Ohm have been observed, thereby surpassing two dimensional graphene by 3 orders of magnitude and theoretical predictions for perfect graphene by more than a factor of 10. The graphene ribbons behave as electronic waveguides or quantum dots. We show that transport in these ribbons is dominated by two components of the ground state transverse waveguide mode, one that is ballistic and temperature independent, and a second thermally activated component that appears to be ballistic at room temperature and insulating at cryogenic temperatures. At room temperature the resistance of both components abruptly increases with increasing length, one at a length of 160 nm and the other at 16 micrometers. These properties appear to be related to the lowest energy quantum states in the charge neutral ribbons. Since epitaxial graphene nanoribbons are readily produced by the thousands, their room temperature ballistic transport properties can be used in advanced nanoelectronics as well. △ Less

Submitted 25 August, 2013; v1 submitted 22 January, 2013; originally announced January 2013.

Journal ref: Nature 506, 349 (2014)

Observation of Resistively Detected Hole Spin Resonance and Zero-field Pseudo-spin Splitting in Epitaxial Graphene

Authors: R. G. Mani, J. Hankinson, C. Berger, W. A. de Heer

Abstract: Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the spin properties of graphene have suggested improved capability for spin-based electronics or spintronics, and spin-based quantum computing. As a result, the de… ▽ More Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the spin properties of graphene have suggested improved capability for spin-based electronics or spintronics, and spin-based quantum computing. As a result, the detection, characterization, and transport of spin have become topics of interest in graphene. Here we report a microwave photo-excited transport study of monolayer and trilayer graphene that reveals an unexpectedly strong microwave-induced electrical-response and dual microwave-induced resonances in the dc-resistance. The results suggest the resistive detection of spin resonance, and provide a measurement of the g-factor, the spin relaxation time, and the sub-lattice degeneracy-splitting at zero-magnetic-field. △ Less

Submitted 3 December, 2012; originally announced December 2012.

Comments: 7 pages, 4 figures

Journal ref: Nature Communications 3:996 (2012)

A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene

Authors: J. Hicks, A. Tejeda, A. Taleb-Ibrahimi, M. S. Nevius, F. Wang, K. Shepperd, J. Palmer, F. Bertran, P. Le Fèvre, J. Kunc, W. A. de Heer, C. Berger, E. H. Conrad

Abstract: A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semicon… ▽ More A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semiconducting-metallic junction made entirely from graphene, and produced without chemical functionalization or finite size patterning. The junction is produced by taking advantage of the inherent, atomically ordered, substrate-graphene interaction when it is grown on SiC, in this case when graphene is forced to grow over patterned SiC steps. This scalable bottomup approach allows us to produce a semiconducting graphene strip whose width is precisely defined within a few graphene lattice constants, a level of precision entirely outside modern lithographic limits. The architecture demonstrated in this work is so robust that variations in the average electronic band structure of thousands of these patterned ribbons have little variation over length scales tens of microns long. The semiconducting graphene has a topologically defined few nanometer wide region with an energy gap greater than 0.5 eV in an otherwise continuous metallic graphene sheet. This work demonstrates how the graphene-substrate interaction can be used as a powerful tool to scalably modify graphene's electronic structure and opens a new direction in graphene electronics research. △ Less

Submitted 19 October, 2012; v1 submitted 12 October, 2012; originally announced October 2012.

Comments: 11 pages, 7 figures

Experimental observation of nanoscale radiative heat flow due to surface plasmons in graphene and doped silicon

Authors: P. J. van Zwol, S. Thiele, C. Berger, W. A. de Heer, J. Chevrier

Abstract: Owing to its two dimensional electronic structure, graphene exhibits many unique properties. One of them is a wave vector and temperature dependent plasmon in the infrared range. Theory predicts that due to these plasmons, graphene can be used as a universal material to enhance nanoscale radiative heat exchange for any dielectric substrate. Here we report on radiative heat transfer experiments bet… ▽ More Owing to its two dimensional electronic structure, graphene exhibits many unique properties. One of them is a wave vector and temperature dependent plasmon in the infrared range. Theory predicts that due to these plasmons, graphene can be used as a universal material to enhance nanoscale radiative heat exchange for any dielectric substrate. Here we report on radiative heat transfer experiments between SiC and a SiO2 sphere which have non matching phonon polariton frequencies, and thus only weakly exchange heat in near field. We observed that the heat flux contribution of graphene epitaxially grown on SiC dominates at short distances. The influence of plasmons on radiative heat transfer is further supported with measurements for doped silicon. These results highlight graphenes strong potential in photonic nearfield and energy conversion devices. △ Less

Submitted 13 November, 2012; v1 submitted 1 July, 2012; originally announced July 2012.

Comments: 4 pages, 3 figures

Resonant Excitation of Graphene K-Phonon and Intra-Landau-Level Excitons in Magneto-Optical Spectroscopy

Authors: M. Orlita, Liang Z. Tan, M. Potemski, M. Sprinkle, C. Berger, W. A. de Heer, Steven G. Louie, G. Martinez

Abstract: Precise infrared magnetotransmission experiments have been performed in magnetic fields up to 32 T on a series of multilayer epitaxial graphene samples. We observe changes in the spectral features and broadening of the main cyclotron transition when the incoming photon energy is in resonance with the lowest Landau level separation and the energy of a K point optical phonon. We have developed a the… ▽ More Precise infrared magnetotransmission experiments have been performed in magnetic fields up to 32 T on a series of multilayer epitaxial graphene samples. We observe changes in the spectral features and broadening of the main cyclotron transition when the incoming photon energy is in resonance with the lowest Landau level separation and the energy of a K point optical phonon. We have developed a theory that explains and quantitatively reproduces the frequency and magnetic field dependence of the phenomenon as the absorption of a photon together with the simultaneous creation of an intervalley, intra-Landau-level exciton, and a K phonon. △ Less

Submitted 14 June, 2012; originally announced June 2012.

Comments: Main manuscript (5 pages); Supplementary Material (18 pages)

Journal ref: Phys. Rev. Lett. 108, 247401 (2012)

Structured epitaxial graphene: growth and properties

Authors: Yike Hu, Ming Ruan, Zelei Guo, Rui Dong, James Palmer, John Hankinson, Claire Berger, Walt A. de Heer

Abstract: Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently demonstrated viable graphene devices are essentially limited to micron size ultrahigh frequency analog field effect transistors and quantum Hall effect devices for metrolo… ▽ More Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently demonstrated viable graphene devices are essentially limited to micron size ultrahigh frequency analog field effect transistors and quantum Hall effect devices for metrology. Nanoscopically patterned graphene tends to have disordered edges that severely reduce mobilities thereby obviating its advantage over other materials. Here we show that graphene grown on structured silicon carbide surfaces overcomes the edge roughness and promises to provide an inroad into nanoscale patterning of graphene. We show that high quality ribbons and rings can be made using this technique. We also report on progress towards high mobility graphene monolayers on silicon carbide for device applications. △ Less

Submitted 27 February, 2012; originally announced February 2012.

Comments: J. Phys D - Epitaxial Graphene special issue (submitted)

Journal ref: J. Phys. D: Appl. Phys. 45 154010 (2012)

Silicon intercalation into the graphene-SiC interface

Authors: F. Wang, K. Shepperd, J. Hicks, M. S. Nevius, H. Tinkey, A. Tejeda, A. Taleb-Ibrahimi, F. Bertran, P. Le F`evre, D. B. Torrance, P. First, W. A. de Heer, A. A. Zakharov, E. H. Conrad

Abstract: In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020. In a sequence of depositions, we have been able to intercalate ~ 6… ▽ More In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020. In a sequence of depositions, we have been able to intercalate ~ 6 ML of Si into the graphene-SiC interface. △ Less

Submitted 12 November, 2011; originally announced November 2011.

Comments: 6 pages, 8 figures, submitted to PRB

Evidence for Interlayer Electronic Coupling in Multilayer Epitaxial Graphene from Polarization Dependent Coherently Controlled Photocurrent Generation

Authors: Dong Sun, Julien Rioux, J. E. Sipe, Yang Zou, Momchil Mihnev, Claire Berger, Walt A. de Heer, Phillip N. First, Theodore B. Norris

Abstract: Most experimental studies to date of multilayer epitaxial graphene on C-face SiC have indicated that the electronic states of different layers are decoupled as a consequence of rotational stacking. We have measured the third order nonlinear tensor in epitaxial graphene as a novel approach to probe interlayer electronic coupling, by studying THz emission from coherently controlled photocurrents as… ▽ More Most experimental studies to date of multilayer epitaxial graphene on C-face SiC have indicated that the electronic states of different layers are decoupled as a consequence of rotational stacking. We have measured the third order nonlinear tensor in epitaxial graphene as a novel approach to probe interlayer electronic coupling, by studying THz emission from coherently controlled photocurrents as a function of the optical pump and THz beam polarizations. We find that the polarization dependence of the coherently controlled THz emission expected from perfectly uncoupled layers, i.e. a single graphene sheet, is not observed. We hypothesize that the observed angular dependence arises from weak coupling between the layers; a model calculation of the angular dependence treating the multilayer structure as a stack of independent bilayers with variable interlayer coupling qualitatively reproduces the polarization dependence, providing evidence for coupling. △ Less

Submitted 13 September, 2011; originally announced September 2011.

Comments: submitted to Nano Letters

Carrier dynamics in epitaxial graphene close to the Dirac point

Authors: Stephan Winnerl, Milan Orlita, Paulina Plochocka, Piotr Kossacki, Marek Potemski, Torben Winzer, Ermin Malic, Andreas Knorr, Michael Sprinkle, Claire Berger, Walter A. de Heer, Harald Schneider, Manfred Helm

Abstract: We study the carrier dynamics in epitaxially grown graphene in the range of photon energies from 10 - 250 meV. The experiments complemented by microscopic modeling reveal that the carrier relaxation is significantly slowed down as the photon energy is tuned to values below the optical phonon frequency, however, owing to the presence of hot carriers, optical phonon emission is still the predominant… ▽ More We study the carrier dynamics in epitaxially grown graphene in the range of photon energies from 10 - 250 meV. The experiments complemented by microscopic modeling reveal that the carrier relaxation is significantly slowed down as the photon energy is tuned to values below the optical phonon frequency, however, owing to the presence of hot carriers, optical phonon emission is still the predominant relaxation process. For photon energies about twice the value of the Fermi energy, a transition from pump-induced transmission to pump-induced absorption occurs due to the interplay of interband and intraband processes. △ Less

Submitted 31 January, 2012; v1 submitted 12 May, 2011; originally announced May 2011.

Journal ref: Phys. Rev. Lett. 107, 237401 (2011)

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

Authors: C. Mathieu, N. Barrett, J. Rault, Y. Y. Mi, B. Zhang, W. A. de Heer, C. Berger, E. H. Conrad, O. Renault

Abstract: We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the sample is covered by 2-3 graphene layers. C1s spectromicroscopy provides an independent measurement of the graphene thickness distribution map. The work functi… ▽ More We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the sample is covered by 2-3 graphene layers. C1s spectromicroscopy provides an independent measurement of the graphene thickness distribution map. The work function, measured by photoelectron emission microscopy (PEEM), varies across the surface from 4.34 to 4.50eV according to both the graphene thickness and the graphene-SiC interface chemical state. At least two SiC surface chemical states (i.e., two different SiC surface structures) are present at the graphene/SiC interface. Charge transfer occurs at each graphene/SiC interface. K-space PEEM gives 3D maps of the k_|| pi - pi* band dispersion in micron scale regions show that the Dirac point shifts as a function of graphene thickness. Novel Bragg diffraction of the Dirac cones via the superlattice formed by the commensurately rotated graphene sheets is observed. The experiments underline the importance of lateral and spectroscopic resolution on the scale of future electronic devices in order to precisely characterize the transport properties and band alignments. △ Less

Submitted 7 April, 2011; originally announced April 2011.

Thermoelectric effect in high mobility single layer epitaxial graphene

Authors: Xiaosong Wu, Yike Hu, Ming Ruan, Nerasoa K. Madiomanana, Claire Berger, Walt A. de Heer

Abstract: The thermoelectric response of high mobility single layer epitaxial graphene on silicon carbide substrates as a function of temperature and magnetic field have been investigated. For the temperature dependence of the thermopower, a strong deviation from the Mott relation has been observed even when the carrier density is high, which reflects the importance of the screening effect. In the quantum H… ▽ More The thermoelectric response of high mobility single layer epitaxial graphene on silicon carbide substrates as a function of temperature and magnetic field have been investigated. For the temperature dependence of the thermopower, a strong deviation from the Mott relation has been observed even when the carrier density is high, which reflects the importance of the screening effect. In the quantum Hall regime, the amplitude of the thermopower peaks is lower than a quantum value predicted by theories, despite the high mobility of the sample. A systematic reduction of the amplitude with decreasing temperature suggests that the suppression of the thermopower is intrinsic to Dirac electrons in graphene. △ Less

Submitted 7 April, 2011; originally announced April 2011.

Comments: 5 pages, 4 figures

Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

Authors: Walt. A. de Heer, Claire Berger, Ming Ruan, Mike Sprinkle, Xuebin Li, Yike Hu, Baiqian Zhang, John Hankinson, Edward H. Conrad

Abstract: After the pioneering investigations into graphene-based electronics at Georgia Tech (GT), great strides have been made develo** epitaxial graphene on silicon carbide (EG) as a new electronic material. EG has not only demonstrated its potential for large scale applications, it also has become an invaluable material for fundamental two-dimensional electron gas physics showing that only EG is on ro… ▽ More After the pioneering investigations into graphene-based electronics at Georgia Tech (GT), great strides have been made develo** epitaxial graphene on silicon carbide (EG) as a new electronic material. EG has not only demonstrated its potential for large scale applications, it also has become an invaluable material for fundamental two-dimensional electron gas physics showing that only EG is on route to define future graphene science. It was long known that graphene mono and multilayers grow on SiC crystals at high temperatures in ultra-high vacuum. At these temperatures, silicon sublimes from the surface and the carbon rich surface layer transforms to graphene. However the quality of the graphene produced in ultrahigh vacuum is poor due to the high sublimation rates at relatively low temperatures. The GT team developed growth methods involving encapsulating the SiC crystals in graphite enclosures, thereby sequestering the evaporated silicon and bringing growth process closer to equilibrium. In this confinement controlled sublimation (CCS) process, very high quality graphene is grown on both polar faces of the SiC crystals. Since 2003, over 50 publications used CCS grown graphene, where it is known as the "furnace grown" graphene. Graphene multilayers grown on the carbon-terminated face of SiC, using the CCS method, were shown to consist of decoupled high mobility graphene layers. The CCS method is now applied on structured silicon carbide surfaces to produce high mobility nano-patterned graphene structures thereby demonstrating that EG is a viable contender for next-generation electronics. Here we present the CCS method and demonstrate several of epitaxial graphene's outstanding properties and applications. △ Less

Submitted 17 March, 2011; originally announced March 2011.

Journal ref: PNAS 108 (41) 16900--16905 (2011)

Carrier scattering from dynamical magneto-conductivity in quasi-neutral epitaxial graphene

Authors: M. Orlita, C. Faugeras, R. Grill, A. Wysmolek, W. Strupinski, C. Berger, W. A. de Heer, G. Martinez, M. Potemski

Abstract: The energy-dependence of the electronic scattering time is probed by Landau level spectroscopy in quasi neutral multilayer epitaxial graphene. From the Landau levels broadening we find that the scattering rate increases linearly with energy. This implies a surprising property of the Landau level spectrum in graphene - the number of the resolved Landau levels remains constant with the applied magne… ▽ More The energy-dependence of the electronic scattering time is probed by Landau level spectroscopy in quasi neutral multilayer epitaxial graphene. From the Landau levels broadening we find that the scattering rate increases linearly with energy. This implies a surprising property of the Landau level spectrum in graphene - the number of the resolved Landau levels remains constant with the applied magnetic field. Insights are given about possible scattering mechanism and carrier mobilities in the graphene system investigated. △ Less

Submitted 20 October, 2011; v1 submitted 4 January, 2011; originally announced January 2011.

Comments: 5 pages, 2 figures, to appear in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 107, 216603 (2011)

Bistability of Free Cobalt and Iron Clusters

Authors: Xiaoshan Xu, Shuangye Yin, Ramiro Moro, Anthony Liang, John Bowlan, Walt A. de Heer

Abstract: The cobalt and iron clusters CoN, FeN (20 < N < 150) measured in a cryogenic molecular beam are found to be bistable with magnetic moments per atom both μN/N 2μB in the ground states and μN */N μB in the metastable excited states (for iron clusters, μN ~3NμB and μN* NμB). This energy gap between the two states vanish for large clusters, which explains the rapid convergence of the magnetic moments… ▽ More The cobalt and iron clusters CoN, FeN (20 < N < 150) measured in a cryogenic molecular beam are found to be bistable with magnetic moments per atom both μN/N 2μB in the ground states and μN */N μB in the metastable excited states (for iron clusters, μN ~3NμB and μN* NμB). This energy gap between the two states vanish for large clusters, which explains the rapid convergence of the magnetic moments to the bulk value and suggests that ground state for the bulk involves a superposition of the two, in line with the fluctuating local orders in the bulk itinerant ferromagnetism. △ Less

Submitted 18 December, 2010; originally announced December 2010.

Comments: 17 pages, 4 figures

Journal ref: Phys. Rev. Lett. 107, 057203 (2011)

The Development of Epitaxial Graphene For 21st Century Electronics

Authors: Walt A. de Heer

Abstract: Graphene has been known for a long time but only recently has its potential for electronics been recognized. Its history is recalled starting from early graphene studies. A critical insight in June, 2001 brought to light that graphene could be used for electronics. This was followed by a series of proposals and measurements. The Georgia Institute of Technology (GIT) graphene electronics research p… ▽ More Graphene has been known for a long time but only recently has its potential for electronics been recognized. Its history is recalled starting from early graphene studies. A critical insight in June, 2001 brought to light that graphene could be used for electronics. This was followed by a series of proposals and measurements. The Georgia Institute of Technology (GIT) graphene electronics research project was first funded, by Intel in 2003, and later by the NSF in 2004 and the Keck foundation in 2008. The GIT group selected epitaxial graphene as the most viable route for graphene based electronics and their seminal paper on transport and structural measurements of epitaxial graphene was published in 2004. Subsequently, the field rapidly developed and multilayer graphene was discovered at GIT. This material consists of many graphene layers but it is not graphite: each layer has the electronic structure of graphene. Currently the field has developed to the point where epitaxial graphene based electronics may be realized in the not too distant future. △ Less

Submitted 7 December, 2010; originally announced December 2010.

Comments: MRS Medal Award paper presented at the MSR meeting in Boston, Dec.2, 2010 MRS Bulletin (submitted)

Journal ref: MRS bulletin 36, 633 (2011)

Symmetry breaking in commensurate graphene rotational stacking; a comparison of theory and experiment

Authors: J. Hicks, M. Sprinkle, K. Shepperd, F. Wang, A. Tejeda, A. Taleb-Ibrahimi, F. Bertran, P. Le Fèvre, W. A. de Heer, C. Berger, E. H. Conrad

Abstract: Graphene stacked in a Bernal configuration (60 degrees relative rotations between sheets) differs electronically from isolated graphene due to the broken symmetry introduced by interlayer bonds forming between only one of the two graphene unit cell atoms. A variety of experiments have shown that non-Bernal rotations restore this broken symmetry; consequently, these stacking varieties have been the… ▽ More Graphene stacked in a Bernal configuration (60 degrees relative rotations between sheets) differs electronically from isolated graphene due to the broken symmetry introduced by interlayer bonds forming between only one of the two graphene unit cell atoms. A variety of experiments have shown that non-Bernal rotations restore this broken symmetry; consequently, these stacking varieties have been the subject of intensive theoretical interest. Most theories predict substantial changes in the band structure ranging from the development of a Van Hove singularity and an angle dependent electron localization that causes the Fermi velocity to go to zero as the relative rotation angle between sheets goes to zero. In this work we show by direct measurement that non-Bernal rotations preserve the graphene symmetry with only a small perturbation due to weak effective interlayer coupling. We detect neither a Van Hove singularity nor any significant change in the Fermi velocity. These results suggest significant problems in our current theoretical understanding of the origins of the band structure of this material. △ Less

Submitted 2 December, 2010; originally announced December 2010.

Comments: 7 pages, 6 figures, submitted to PRB

How Metallic are Small Sodium Clusters?

Authors: John Bowlan, Anthony Liang, Walt A. de Heer

Abstract: Cryogenic cluster beam experiments have provided crucial insights into the evolution of the metallic state from the atom to the bulk. Surprisingly, one of the most fundamental metallic properties, the ability of a metal to efficiently screen electric fields, is still poorly understood in small clusters. Theory has predicted that many small Na clusters are unable to screen charge inhomogeneities an… ▽ More Cryogenic cluster beam experiments have provided crucial insights into the evolution of the metallic state from the atom to the bulk. Surprisingly, one of the most fundamental metallic properties, the ability of a metal to efficiently screen electric fields, is still poorly understood in small clusters. Theory has predicted that many small Na clusters are unable to screen charge inhomogeneities and thus have permanent dipole moments. High precision electric deflection experiments on cryogenically cooled Na$_N$ ($N<200$) clusters show that the electric dipole moments are at least an order of magnitude smaller than predicted, and are consistent with zero, as expected for a metal. The polarizabilities of Na clusters also show metal spheroid behavior, with fine size oscillations caused by the shell structure. △ Less

Submitted 25 December, 2010; v1 submitted 25 October, 2010; originally announced October 2010.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 106 043401 (2011)

Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene

Authors: M. Orlita, C. Faugeras, J. Borysiuk, J. M. Baranowski, W. Strupinski, M. Sprinkle, C. Berger, W. A. de Heer, D. M. Basko, G. Martinez, M. Potemski

Abstract: Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers. Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers. △ Less

Submitted 23 January, 2011; v1 submitted 8 October, 2010; originally announced October 2010.

Comments: 5 pages, 2 figures, to appear in Phys. Rev. B

Journal ref: Phys. Rev. B 83, 125302 (2011)

Epitaxial Graphene Electronic Structure And Transport

Authors: Walt A. de Heer, Claire Berger, Xiaosong Wu, Mike Sprinkle, Yike Hu, Ming Ruan, Joseph A. Stroscio, Phillip N. First, Robert Haddon, Benjamin Piot, Clement Faugeras, Marek Potemski, Jeong-Sun Moon

Abstract: Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early resul… ▽ More Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure, and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analog epitaxial graphene amplifiers. △ Less

Submitted 24 March, 2010; originally announced March 2010.

Comments: 18 pages, 10 figures to be published in J. Phys. D, special Issue on Carbon Related Materials Cluster

Journal ref: J. Phys. D: Appl. Phys. 43, 374007 (2010)

Epitaxial Graphenes on Silicon Carbide

Authors: Phillip N. First, Walt A. de Heer, Thomas Seyller, Claire Berger, Joseph A. Stroscio, Jeong-Sun Moon

Abstract: The materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals is reviewed. We show that the growth of epitaxial graphene on Si-terminated SiC(0001) is much different than growth on the C-terminated SiC(000 -1) surface, and discuss the physical structure of these graphenes. The unique electronic structure and transport properties of each type of epitaxial graph… ▽ More The materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals is reviewed. We show that the growth of epitaxial graphene on Si-terminated SiC(0001) is much different than growth on the C-terminated SiC(000 -1) surface, and discuss the physical structure of these graphenes. The unique electronic structure and transport properties of each type of epitaxial graphene is described, as well as progress toward the development of epitaxial graphene devices. This materials system is rich in subtleties, and graphene grown on the two polar faces differs in important ways, but all of the salient features of ideal graphene are found in these epitaxial graphenes, and wafer-scale fabrication of multi-GHz devices already has been achieved. △ Less

Submitted 3 February, 2010; originally announced February 2010.

Comments: To appear in the April 2010 issue of the MRS Bulletin

Journal ref: MRS BULLETIN, 35, 296 (2010)

Directed self-organization of graphene nanoribbons on SiC

Authors: M. Sprinkle, M. Ruan, X. Wu, Y. Hu, M. Rubio-Roy, J. Hankinson, N. K. Madiomanana, C. Berger, W. A. de Heer

Abstract: Realization of post-CMOS graphene electronics requires production of semiconducting graphene, which has been a labor-intensive process. We present tailoring of silicon carbide crystals via conventional photolithography and microelectronics processing to enable templated graphene growth on 4H-SiC{1-10n} (n = 8) crystal facets rather than the customary {0001} planes. This allows self-organized gro… ▽ More Realization of post-CMOS graphene electronics requires production of semiconducting graphene, which has been a labor-intensive process. We present tailoring of silicon carbide crystals via conventional photolithography and microelectronics processing to enable templated graphene growth on 4H-SiC{1-10n} (n = 8) crystal facets rather than the customary {0001} planes. This allows self-organized growth of graphene nanoribbons with dimensions defined by those of the facet. Preferential growth is confirmed by Raman spectroscopy and high-resolution transmission electron microscopy (HRTEM) measurements, and electrical characterization of prototypic graphene devices is presented. Fabrication of > 10,000 top-gated graphene transistors on a 0.24 cm2 SiC chip demonstrates scalability of this process and represents the highest density of graphene devices reported to date. △ Less

Submitted 3 February, 2010; originally announced February 2010.

Comments: 13 pages, 5 figures

Journal ref: Nature Nanotechnology 5, 727 (2010)

Structure and electronic properties of epitaxial graphene grown on SiC

Authors: M. Sprinkle, J. Hicks, A. Tejeda, A. Taleb-Ibrahimi, P. Le Fèvre, F. Bertran, H. Tinkey, M. C. Clark, P. Soukiassian, D. Martinotti, J. Hass, W. A. de Heer, C. Berger, E. H. Conrad

Abstract: We review progress in develo** epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's electronic properties are discussed. Although graphene grown on both polar faces of SiC is addressed, our discussions will focus on graphene grown on the (000-1) C-face of SiC… ▽ More We review progress in develo** epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's electronic properties are discussed. Although graphene grown on both polar faces of SiC is addressed, our discussions will focus on graphene grown on the (000-1) C-face of SiC. The unique properties of C-face multilayer epitaxial graphene have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal-stacked graphite sample. The origin of multilayer graphene's electronic behavior is its unique highly-ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that causes each sheet to behave like an isolated graphene plane. △ Less

Submitted 21 January, 2010; originally announced January 2010.

Comments: 13 pages, 16 figures

Structural Determination of Multilayer Graphene via Atomic Moiré Interferometry

Authors: David L. Miller, Kevin D. Kubista, Gregory M. Rutter, Ming Ruan, Walt A. de Heer, Phillip N. First, Joseph A. Stroscio

Abstract: Rotational misalignment of two stacked honeycomb lattices produces a moiré pattern that is observable in scanning tunneling microscopy as a small modulation of the apparent surface height. This is known from experiments on highly-oriented pyrolytic graphite. Here, we observe the combined effect of three-layer moiré patterns in multilayer graphene grown on SiC ($000\bar{1}$). Small-angle rotation… ▽ More Rotational misalignment of two stacked honeycomb lattices produces a moiré pattern that is observable in scanning tunneling microscopy as a small modulation of the apparent surface height. This is known from experiments on highly-oriented pyrolytic graphite. Here, we observe the combined effect of three-layer moiré patterns in multilayer graphene grown on SiC ($000\bar{1}$). Small-angle rotations between the first and third layer are shown to produce a "double-moiré" pattern, resulting from the interference of moiré patterns from the first three layers. These patterns are strongly affected by relative lattice strain between the layers. We model the moiré patterns as a beat-period of the mismatched reciprocal lattice vectors and show how these patterns can be used to determine the relative strain between lattices, in analogy to strain measurement by optical moiré interferometry. △ Less

Submitted 15 January, 2010; originally announced January 2010.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 81, 125427 (2010)

Effect of a magnetic field on the two-phonon Raman scattering in graphene

Authors: C. Faugeras, P. Kossacki, D. M. Basko, M. Amado, M. Sprinkle, C. Berger, W. A. de Heer, M. Potemski

Abstract: We have studied, both experimentally and theoretically, the change of the so-called 2D band of the Raman scattering spectrum of graphene (the two-phonon peak near 2700 cm-1) in an external magnetic field applied perpendicular to the graphene crystal plane at liquid helium temperature. A shift to lower frequency and broadening of this band is observed as the magnetic field is increased from 0 to 33… ▽ More We have studied, both experimentally and theoretically, the change of the so-called 2D band of the Raman scattering spectrum of graphene (the two-phonon peak near 2700 cm-1) in an external magnetic field applied perpendicular to the graphene crystal plane at liquid helium temperature. A shift to lower frequency and broadening of this band is observed as the magnetic field is increased from 0 to 33 T. At fields up to 5--10 T the changes are quadratic in the field while they become linear at higher magnetic fields. This effect is explained by the curving of the quasiclassical trajectories of the photo-excited electrons and holes in the magnetic field, which enables us (i) to extract the electron inelastic scattering rate, and (ii) to conclude that electronic scattering accounts for about half of the measured width of the 2D peak. △ Less

Submitted 21 May, 2010; v1 submitted 11 January, 2010; originally announced January 2010.

Comments: 11 pages, 7 figures

Journal ref: Phys. Rev. B 81, 155436, (2010)

Half integer quantum Hall effect in high mobility single layer epitaxial graphene

Authors: Xiaosong Wu, Yike Hu, Ming Ruan, Nerasoa K Madiomanana, John Hankinson, Mike Sprinkle, Claire Berger, Walt A. de Heer

Abstract: The quantum Hall effect, with a Berry's phase of $π$ is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is $\sim$ 20,000 cm$^2$/V$\cdot$s at 4 K and ~15,000 cm$^2$/V$\cdot$s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO$_2$ and an order of magnitude larger than Si-face epit… ▽ More The quantum Hall effect, with a Berry's phase of $π$ is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is $\sim$ 20,000 cm$^2$/V$\cdot$s at 4 K and ~15,000 cm$^2$/V$\cdot$s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO$_2$ and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene-based electronics. △ Less

Submitted 8 December, 2009; v1 submitted 15 September, 2009; originally announced September 2009.

Comments: Some modifications in the text and figures, 7 pages, 2 figures

Journal ref: Appl. Phys. Lett. 95, 223108 (2009)

Anomalous quantum Hall effect in epitaxial graphene

Authors: Xiaosong Wu, Yike Hu, Ming Ruan, Nerasoa K Madiomanana, John Hankinson, Mike Sprinkle, Claire Berger, Walt A. de Heer

Abstract: The observation of the anomalous quantum Hall effect in exfoliated graphene flakes triggered an explosion of interest in graphene. It was however not observed in high quality epitaxial graphene multilayers grown on silicon carbide substrates. The quantum Hall effect is shown on epitaxial graphene monolayers that were deliberately grown over substrate steps and subjected to harsh processing proce… ▽ More The observation of the anomalous quantum Hall effect in exfoliated graphene flakes triggered an explosion of interest in graphene. It was however not observed in high quality epitaxial graphene multilayers grown on silicon carbide substrates. The quantum Hall effect is shown on epitaxial graphene monolayers that were deliberately grown over substrate steps and subjected to harsh processing procedures, demonstrating the robustness of the epitaxial graphene monolayers and the immunity of their transport properties to temperature, contamination and substrate imperfections. The mobility of the monolayer C-face sample is 19,000 cm^2/Vs. This is an important step towards the realization of epitaxial graphene based electronics. △ Less

Submitted 27 August, 2009; originally announced August 2009.

Comments: Two pages, 1 figure. Submitted to Science Brevia

Top and side gated epitaxial graphene field effect transistors

Authors: Xuebin Li, Xiaosong Wu, Mike Sprinkle, Fan Ming, Ming Ruan, Yike Hu, Claire Berger, Walt A. de Heer

Abstract: Three types of first generation epitaxial graphene field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The channels have a Hall bar geometry to facilitate magnetoresistance measurements. FETs patterned on the Si-face exhib… ▽ More Three types of first generation epitaxial graphene field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The channels have a Hall bar geometry to facilitate magnetoresistance measurements. FETs patterned on the Si-face exhibit off-to-on channel resistance ratios that exceed 30. C-face FETs have lower off-to-on resistance ratios, but their mobilities (up to 5000 cm2/Vs) are much larger than that for Si-face transistors. Initial investigations into all-graphene side gate FET structures are promising. △ Less

Submitted 31 July, 2009; originally announced August 2009.

Journal ref: Phys. Status Solidi A 207, No. 2, 286-290 (2010)

Tuning the electron-phonon coupling in multilayer graphene with magnetic fields

Authors: C. Faugeras, M. Amado, P. Kossacki, M. Orlita, M. Sprinkle, C. Berger, W. A. de Heer, M. Potemski

Abstract: Magneto Raman scattering study of the E$_{2g}$ optical phonons in multi-layer epitaxial graphene grown on a carbon face of SiC are presented. At 4.2K in magnetic field up to 33 T, we observe a series of well pronounced avoided crossings each time the optically active inter Landau level transition is tuned in resonance with the E$_{2g}$ phonon excitation (at 196 meV). The width of the phonon Rama… ▽ More Magneto Raman scattering study of the E$_{2g}$ optical phonons in multi-layer epitaxial graphene grown on a carbon face of SiC are presented. At 4.2K in magnetic field up to 33 T, we observe a series of well pronounced avoided crossings each time the optically active inter Landau level transition is tuned in resonance with the E$_{2g}$ phonon excitation (at 196 meV). The width of the phonon Raman scattering response also shows pronounced variations and is enhanced in conditions of resonance. The experimental results are well reproduced by a model that gives directly the strength of the electron-phonon interaction. △ Less

Submitted 31 July, 2009; originally announced July 2009.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 103, 186803, (2009)

First direct observation of a nearly ideal graphene band structure

Authors: M. Sprinkle, D. Siegel, Y. Hu, J. Hicks, P. Soukiassian, A. Tejeda, A. Taleb-Ibrahimi, P. Le Fèvre, F. Bertran, C. Berger, W. A. de Heer, A. Lanzara, E. H. Conrad

Abstract: Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films cause adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cones… ▽ More Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films cause adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cones) at the graphene K-point. Each cone corresponds to an individual macro-scale graphene sheet in a multilayer stack where AB-stacked sheets can be considered as low density faults. △ Less

Submitted 30 July, 2009; originally announced July 2009.

Comments: 5 pages, 4 figures

Slowing hot carrier relaxation in graphene using a magnetic field

Authors: P. Plochocka, P. Kossacki, A. Golnik, T. Kazimierczuk, C. Berger, W. A. de Heer, M. Potemski

Abstract: A degenerate pump--probe technique is used to investigate the non equilibrium carrier dynamics in multi--layer graphene. Two distinctly different dynamics of the carrier relaxation are observed. A fast relaxation ($\sim 50$ fs) of the carriers after the initial effect of phase space filling followed by a slower relaxation ($\sim 4$ ps) due to thermalization. Both relaxation processes are less ef… ▽ More A degenerate pump--probe technique is used to investigate the non equilibrium carrier dynamics in multi--layer graphene. Two distinctly different dynamics of the carrier relaxation are observed. A fast relaxation ($\sim 50$ fs) of the carriers after the initial effect of phase space filling followed by a slower relaxation ($\sim 4$ ps) due to thermalization. Both relaxation processes are less efficient when a magnetic field is applied at low temperatures which is attributed to the suppression of the electron-electron Auger scattering due to the non equidistant Landau level spacing of the Dirac fermions in graphene. △ Less

Submitted 11 December, 2009; v1 submitted 5 June, 2009; originally announced June 2009.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 80, 245415 (2009)