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Quantum Noise Spectroscopy of Critical Slowing Down in an Atomically Thin Magnet
Authors:
Mark E. Ziffer,
Francisco Machado,
Benedikt Ursprung,
Artur Lozovoi,
Aya Batoul Tazi,
Zhiyang Yuan,
Michael E. Ziebel,
Tom Delord,
Nanyu Zeng,
Evan Telford,
Daniel G. Chica,
Dane W. deQuilettes,
Xiaoyang Zhu,
James C. Hone,
Kenneth L. Shepard,
Xavier Roy,
Nathalie P. de Leon,
Emily J. Davis,
Shubhayu Chatterjee,
Carlos A. Meriles,
Jonathan S. Owen,
P. James Schuck,
Abhay N. Pasupathy
Abstract:
Low frequency critical fluctuations in magnetic materials encode important information about the physics of magnetic ordering, especially in the associated critical exponents. While a number of techniques have been established to study magnetic critical fluctuations in bulk materials, few approaches maintain the required microscopic resolution, temporal range, and signal sensitivity to quantitativ…
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Low frequency critical fluctuations in magnetic materials encode important information about the physics of magnetic ordering, especially in the associated critical exponents. While a number of techniques have been established to study magnetic critical fluctuations in bulk materials, few approaches maintain the required microscopic resolution, temporal range, and signal sensitivity to quantitatively analyze critical fluctuations in magnetic phases of 2D materials. Using nitrogen-vacancy (NV) centers in diamond as quantum probes, we implement $T_2$ (spin decoherence) noise magnetometry to quantitatively study critical dynamics in a tri-layer sample of the Van der Waals magnetic material CrSBr. We characterize critical fluctuations across the magnetic phase transition in CrSBr by analyzing the NV spin echo coherence decay on time scales that approach the characteristic fluctuation correlation time $τ_c$ at criticality, allowing us to study the temperature dependence of critical slowing down. By modelling the spin echo decoherence using theoretical models for critical dynamics, we are able to extract the critical exponent $ν$ for the correlation length. We find a value for $ν$ which deviates from the Ising prediction and suggests the role of long-range dipolar interactions in modifying the critical behavior of magnetic fluctuation modes in CrSBr at the 2D limit. We further compare the divergence of correlation length in CrSBr to the predicted exponential divergence for 2D XY criticality, and find evidence suggesting the possibility of such behavior in a temperature window near $T_C$ where static magnetic domains are absent. Our work provides a first demonstration of the capability of decoherence based NV noise magnetometry to quantitatively analyze critical scaling laws in 2D materials.
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Submitted 8 July, 2024;
originally announced July 2024.
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Charge carrier coupling to the soft phonon mode in a ferroelectric semiconductor
Authors:
Mark E. Ziffer,
Lucas Huber,
Feifan Wang,
Victoria A. Posey,
Jake C. Russell,
Taketo Handa,
Xavier Roy,
X. -Y. Zhu
Abstract:
Many crystalline solids possess strongly anharmonic soft phonon modes characterized by diminishing frequency as temperature approaches a critical point associated with a symmetry breaking phase transition. While electron-soft phonon coupling can introduce unique scattering channels for charge carriers in ferroelectrics, recent studies on the non-ferroelectric lead halide perovskites have also sugg…
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Many crystalline solids possess strongly anharmonic soft phonon modes characterized by diminishing frequency as temperature approaches a critical point associated with a symmetry breaking phase transition. While electron-soft phonon coupling can introduce unique scattering channels for charge carriers in ferroelectrics, recent studies on the non-ferroelectric lead halide perovskites have also suggested the central role of anharmonic phonons bearing resemblance to soft modes in charge carrier screening. Here we apply coherent phonon spectroscopy to directly study electron coupling to the soft transverse optical (TO) phonon mode in a ferroelectric semiconductor SbSI. Photo-generated charge carriers in SbSI are found to be exceptionally long lived and are associated with a transient electro-optical effect that can be explained by interactions between charge carriers and thermally stimulated soft-phonon excitations. These results provide strong evidence for the role of electron-soft phonon coupling in the efficient screening of charge carriers and in reducing charge recombination rates, both desirable properties for optoelectronics.
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Submitted 22 May, 2022;
originally announced May 2022.
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Bismuth-do** Alters Structural Phase Transitions in Methylammonium Lead Tribromide Single Crystals
Authors:
Erin Jedlicka,
Jian Wang,
Joshua Mutch,
Young-Kwang Jung,
Preston Went,
Joseph Mohammed,
Mark Ziffer,
Rajiv Giridharagopal,
Aron Walsh,
Jiun-Haw Chu,
David S. Ginger
Abstract:
We study the effects of bismuth do** on the crystal structure and phase transitions in single crystals of the perovskite semiconductor methylammonium lead tribromide, MAPbBr3. By measuring temperature-dependent specific heat capacity (Cp) we find that, as Bi do** increases, the phase transition assigned to the cubic to tetragonal phase boundary decreases in temperature. Furthermore, after dopi…
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We study the effects of bismuth do** on the crystal structure and phase transitions in single crystals of the perovskite semiconductor methylammonium lead tribromide, MAPbBr3. By measuring temperature-dependent specific heat capacity (Cp) we find that, as Bi do** increases, the phase transition assigned to the cubic to tetragonal phase boundary decreases in temperature. Furthermore, after do** we observe one phase transition between 135 and 155 K, in contrast to two transitions observed in the undoped single crystal. These results appear strikingly similar to previously reported effects of mechanical pressure on perovskite crystal structure. Using X-ray diffraction, we show that the lattice constant decreases as Bi is incorporated into the crystal, as predicted by density functional theory (DFT). We propose that bismuth substitutional do** on the lead site is dominant, resulting in BiPb+ centers which induce compressive chemical strain that alters the crystalline phase transitions.
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Submitted 16 March, 2021; v1 submitted 16 February, 2021;
originally announced February 2021.
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Direct Determination of Band Gap Renormalization in Photo-Excited Monolayer MoS2
Authors:
Fang Liu,
Mark Ziffer,
Kameron R. Hansen,
Jue Wang,
Xiaoyang Zhu
Abstract:
A key feature of monolayer semiconductors, such as transition-metal dichalcogenides, is the poorly screened Coulomb potential, which leads to large exciton binding energy (Eb) and strong renormalization of the quasiparticle bandgap (Eg) by carriers. The latter has been difficult to determine due to cancellation in changes of Eb and Eg, resulting in little change in optical transition energy at dif…
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A key feature of monolayer semiconductors, such as transition-metal dichalcogenides, is the poorly screened Coulomb potential, which leads to large exciton binding energy (Eb) and strong renormalization of the quasiparticle bandgap (Eg) by carriers. The latter has been difficult to determine due to cancellation in changes of Eb and Eg, resulting in little change in optical transition energy at different carrier densities. Here we quantify bandgap renormalization in macroscopic single crystal MoS2 monolayers on SiO2 using time and angle resolved photoemission spectroscopy (TR-ARPES). At excitation density above the Mott threshold, Eg decreases by as much as 360 meV. We compare the carrier density dependent Eg with previous theoretical calculations and show the necessity of knowing both do** and excitation densities in quantifying the bandgap.
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Submitted 19 February, 2019;
originally announced February 2019.
