Showing 1–50 of 88 results for author: Zhu, M

Self-consistent expansion and field-theoretic renormalization group for a singular nonlinear diffusion equation with anomalous scaling

Authors: Minhui Zhu, Nigel Goldenfeld

Abstract: The method of self-consistent expansions is a powerful tool for handling strong coupling problems that might otherwise be beyond the reach of perturbation theory, providing surprisingly accurate approximations even at low order. First applied in its embryonic form to fully-developed turbulence, it has subsequently been successfully applied to a variety of problems that include polymer statistics,… ▽ More The method of self-consistent expansions is a powerful tool for handling strong coupling problems that might otherwise be beyond the reach of perturbation theory, providing surprisingly accurate approximations even at low order. First applied in its embryonic form to fully-developed turbulence, it has subsequently been successfully applied to a variety of problems that include polymer statistics, interface dynamics and high order perturbation theory for the anharmonic oscillator. Here we show that the self-consistent expansion can be applied to singular perturbation problems arising in the theory of partial differential equations. We demonstrate its application to Barenblatt's nonlinear diffusion equation for porous media filtration, where the long-time asymptotics exhibits anomalous dimensions which can be systematically calculated using the perturbative renormalization group. We find that even the first order self-consistent expansion improves the approximation of the anomalous dimension obtained by the first order perturbative renormalization group, especially in the strong coupling regime. We also develop a field-theoretic framework for deterministic partial differential equations to facilitate the application of self-consistent expansions to other dynamic systems, and illustrate its application using the example of Barenblatt's equation. The scope of our results on the combination of renormalization group and self-consistent expansions is limited to partial differential equations whose long-time asymptotics is controlled by incomplete similarity. However, our work suggests that these methods could be applied to a broader suite of singular perturbation problems such as boundary layer theory, multiple scales analysis and matched asymptotic expansions, for which excellent approximations using renormalization group methods alone are already available. △ Less

Submitted 26 June, 2024; originally announced June 2024.

Comments: 13 pages, 1 figure

Observation of floating surface state in obstructed atomic insulator candidate NiP$_2$

Authors: Xiang-Rui Liu, Ming-Yuan Zhu, Yuanwen Feng, Meng Zeng, Xiao-Ming Ma, Yu-Jie Hao, Yue Dai, Rong-Hao Luo, Kohei Yamagami, Yi Liu, Shengtao Cui, Zhe Sun, Jia-Yu Liu, Zhengtai Liu, Mao Ye, Dawei Shen, Bing Li, Chang Liu

Abstract: Obstructed atomic insulator is recently proposed as an unconventional material, in which electric charge centers localized at sites away from the atoms. A half-filling surface state would emerge at specific interfaces cutting through these charge centers and avoid intersecting any atoms. In this article, we utilized angle-resolved photoemission spectroscopy and density functional theory calculatio… ▽ More Obstructed atomic insulator is recently proposed as an unconventional material, in which electric charge centers localized at sites away from the atoms. A half-filling surface state would emerge at specific interfaces cutting through these charge centers and avoid intersecting any atoms. In this article, we utilized angle-resolved photoemission spectroscopy and density functional theory calculations to study one of the obstructed atomic insulator candidates, NiP$_2$. A floating surface state with large effective mass that is isolated from all bulk states is resolved on the (100) cleavage plane, distinct from previously reported surface states in obstructed atomic insulators that are merged into bulk bands. Density functional theory calculation results elucidate that this floating surface state is originated from the obstructed Wannier charge centers, albeit underwent surface reconstruction that splits the half-filled obstructed surface state. Our findings not only shed lights on the spectroscopy study of obstructed atomic insulators and obstructed surface states, but also provide possible route for development of new catalysts. △ Less

Submitted 16 June, 2024; v1 submitted 8 June, 2024; originally announced June 2024.

Comments: 21 pages, 5 figures

Crystal facet orientation and temperature dependence of charge and spin Hall effects in noncollinear antiferromagnet: A first-principles investigation

Authors: Meng Zhu, Xinlu Li, Fanxing Zheng, Jianting Dong, Ye Zhou, Kun Wu, Jia Zhang

Abstract: Noncollinear antiferromagnets (nc-AFMs) have attracted increasing research attention in spintronics due to their unique spin structures and fascinating charge and spin transport properties. By using first-principles calculations, we comprehensively investigate the charge and spin Hall effects in representative noncollinear antiferromagnet Mn3Pt. Our study reveals that the Hall effects in nc-AFMs a… ▽ More Noncollinear antiferromagnets (nc-AFMs) have attracted increasing research attention in spintronics due to their unique spin structures and fascinating charge and spin transport properties. By using first-principles calculations, we comprehensively investigate the charge and spin Hall effects in representative noncollinear antiferromagnet Mn3Pt. Our study reveals that the Hall effects in nc-AFMs are critically dependent on the crystal facet orientation and temperature. For (001) orientated Mn3Pt, each charge and spin Hall conductivity element is comprised of both time reversal odd (T-odd) and even (T-even) contribution, associated with longitudinal conductivity, which leads to sizable and highly anisotropic Hall conductivity. The temperature dependence of charge and spin Hall conductivity has been elucidated by considering both phonon and spin disorder scattering. The scaling relations between Hall conductivity and longitudinal conductivity have also been investigated. The existence of prominent spin Hall effect in nc-AFMs may generate spin current with Sz spin polarization, which is advantageous for field free switching of perpendicular magnetization. Our work may provide unambiguous understanding on the charge and spin transport in noncollinear antiferromagnets and pave their way for applications in antiferromagnetic spintronics. △ Less

Submitted 26 May, 2024; originally announced May 2024.

Emergent Ferromagnetism at LaFeO3/SrTiO3 Interface Arising from Strain-induced Spin-State Transition

Authors: Menglin Zhu, Joseph Lanier, Sevim Polat Genlik, Jose G. Flores, Victor da Cruz Pinha Barbosa, Mohit Randeria, Patrick M. Woodward, Maryam Ghazisaeidi, Fengyuan Yang, **woo Hwang

Abstract: Creating new interfacial magnetic states with desired functionalities is attractive for fundamental studies and spintronics applications. The emergence of interfacial magnetic phases demands the fabrication of pristine interfaces and the characterization and understanding of atomic structure as well as electronic, magnetic, and orbital degrees of freedom at the interface. Here, we report a novel i… ▽ More Creating new interfacial magnetic states with desired functionalities is attractive for fundamental studies and spintronics applications. The emergence of interfacial magnetic phases demands the fabrication of pristine interfaces and the characterization and understanding of atomic structure as well as electronic, magnetic, and orbital degrees of freedom at the interface. Here, we report a novel interfacial insulating ferromagnetic order in antiferromagnetic LaFeO3 grown on SrTiO3, characterized by a combination of electron microscopy and spectroscopy, magnetometry, and density functional theory. The epitaxial strain drives a spin-state disproportionation in the interfacial layer of LaFeO3, which leads to a checkerboard arrangement of low- and high-spin Fe3+ ions inside smaller and larger FeO6 octahedra, respectively. Ferromagnetism at the interface arises from superexchange interactions between the low- and high-spin Fe3+. The detailed understanding of creation of emergent magnetism illustrates the potential of designing and controlling orbital degrees of freedom at the interface to realize novel phases and functionalities for future spin-electronic applications. △ Less

Submitted 21 May, 2024; originally announced May 2024.

Observation of Spin Splitting in Room-Temperature Metallic Antiferromagnet CrSb

Authors: Meng Zeng, Ming-Yuan Zhu, Yu-Peng Zhu, Xiang-Rui Liu, Xiao-Ming Ma, Yu-Jie Hao, Pengfei Liu, Gexing Qu, Yichen Yang, Zhicheng Jiang, Kohei Yamagami, Masashi Arita, Xiaoqian Zhang, Tian-Hao Shao, Yue Dai, Kenya Shimada, Zhengtai Liu, Mao Ye, Yaobo Huang, Qihang Liu, Chang Liu

Abstract: Recently, unconventional antiferromagnets that enable the splitting of electronic spins have been theoretically proposed and experimentally realized, where the magnetic sublattices containing moments pointing at different directions are connected by a novel set of symmetries. Such spin splitting (SS) is substantial, $k$-dependent, and independent of the spin-orbit coupling strength, making these m… ▽ More Recently, unconventional antiferromagnets that enable the splitting of electronic spins have been theoretically proposed and experimentally realized, where the magnetic sublattices containing moments pointing at different directions are connected by a novel set of symmetries. Such spin splitting (SS) is substantial, $k$-dependent, and independent of the spin-orbit coupling strength, making these magnets promising materials for antiferromagnetic spintronics. Here, combined with angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations, we perform a systematic study on CrSb, a metallic spin-split antiferromagnet candidate with $T_N$ = 703 K. Our data reveals the electronic structure of CrSb along both out-of-plane and in-plane momentum directions, which renders anisotropic $k$-dependent SS and agrees well with the calculational results. The magnitude of such SS reaches up to at least 0.8 eV at non-high-symmetry momentum points, which is significantly higher than the largest known SOC-induced SS. This compound expands the choice of materials in the field of antiferromagnetic spintronics and is likely to stimulate subsequent investigations of high-efficiency spintronic devices that are functional at room temperature. △ Less

Submitted 21 May, 2024; originally announced May 2024.

Comments: 14 pages, 4 figures

Unconventional Unidirectional Magnetoresistance in vdW Heterostructures

Authors: I-Hsuan Kao, Junyu Tang, Gabriel Calderon Ortiz, Menglin Zhu, Sean Yuan, Rahul Rao, Jiahan Li, James H. Edgar, Jiaqiang Yan, David G. Mandrus, Kenji Watanabe, Takashi Taniguchi, **woo Hwang, Ran Cheng, Jyoti Katoch, Simranjeet Singh

Abstract: Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic layer, refers to a change in the longitudinal resistance upon the reversal of magnetization, which typically originates from the interaction of spin-current and ma… ▽ More Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic layer, refers to a change in the longitudinal resistance upon the reversal of magnetization, which typically originates from the interaction of spin-current and magnetization at the interface. Because of UMR s linear dependence on applied charge current and magnetization, it can be used to electrically read the magnetization state. However, in conventional spin source materials, the spin polarization of an electric field induced spin current is restricted to be in the film plane and hence the ensuing UMR can only respond to the in plane component of the magnetization. On the other hand, magnets with perpendicular magnetic anisotropy (PMA) are highly desired for magnetic memory and spin-logic devices, while the electrical read out of PMA magnets through UMR is critically missing. Here, we report the discovery of an unconventional UMR in bilayer heterostructures of a topological semimetal (WTe2) and a PMA ferromagnetic insulator (Cr2Ge2Te6, CGT), which allows to electrically read the up and down magnetic states of the CGT layer by measuring the longitudinal resistance. Our theoretical calculations based on a tight binding model show that the unconventional UMR originates from the interplay of crystal symmetry breaking in WTe2 and magnetic exchange interaction across the WTe2 and CGT interface. Combining with the ability of WTe2 to obtain magnetic field free switching of the PMA magnets, our discoveries open an exciting pathway to achieve two terminal magnetic memory devices that operate solely on the spin orbit torque and UMR, which is critical for develo** next-generation non volatile and low power consumption data storage technologies. △ Less

Submitted 17 May, 2024; originally announced May 2024.

Trapped-Ion Quantum Simulation of Electron Transfer Models with Tunable Dissipation

Authors: Visal So, Midhuna Duraisamy Suganthi, Abhishek Menon, Mingjian Zhu, Roman Zhuravel, Han Pu, Peter G. Wolynes, José N. Onuchic, Guido Pagano

Abstract: Electron transfer is at the heart of many fundamental physical, chemical, and biochemical processes essential for life. Exact simulation of reactions in these systems is often hindered by the large number of degrees of freedom and by the essential role of quantum effects. In this work, we experimentally simulate a paradigmatic model of molecular electron transfer using a multi-species trapped-ion… ▽ More Electron transfer is at the heart of many fundamental physical, chemical, and biochemical processes essential for life. Exact simulation of reactions in these systems is often hindered by the large number of degrees of freedom and by the essential role of quantum effects. In this work, we experimentally simulate a paradigmatic model of molecular electron transfer using a multi-species trapped-ion crystal, where the donor-acceptor gap, the electronic and vibronic couplings, and the bath relaxation dynamics can all be controlled independently. We employ the ground-state qubit of one ion to simulate the electronic degree of freedom and the optical qubit of another ion to perform reservoir engineering on a collective mode encoding a reaction coordinate. We observe the real-time dynamics of the spin excitation, measuring the transfer rate in several regimes of adiabaticity and relaxation dynamics. The setup allows access to the electron transfer dynamics in the non-perturbative regime, where there is no clear hierarchy among the energy scales in the model, as has been suggested to be optimal for many rate phenomena, including photosynthesis. Our results provide a testing ground for increasingly rich models of molecular excitation transfer processes that are relevant for molecular electronics and light-harvesting systems. △ Less

Submitted 16 May, 2024; originally announced May 2024.

Antiferroelectric Nanodomains Stabilized by Chemical Disorder at Anti-phase Boundaries

Authors: Menglin Zhu, Michael Xu, Yu Yun, Liyan Wu, Or Shafir, Colin Gilgenbach, Lane W. Martin, Ilya Grinberg, Jonathan E. Spanier, James M. LeBeau

Abstract: Antiferroelectric perovskite oxides exhibit exceptional dielectric properties and high structural/chemical tunability, making them promising for a wide range of applications from high energy-density capacitors to solid-state cooling. However, tailoring the antiferroelectric phase stability through alloying is hampered by the complex interplay between chemistry and the alignment of dipole moments.… ▽ More Antiferroelectric perovskite oxides exhibit exceptional dielectric properties and high structural/chemical tunability, making them promising for a wide range of applications from high energy-density capacitors to solid-state cooling. However, tailoring the antiferroelectric phase stability through alloying is hampered by the complex interplay between chemistry and the alignment of dipole moments. In this study, correlations between chemical order and the stability of the antiferroelectric phase are established at anti-phase boundaries in \ce{Pb2MgWO6}. Using multislice ptychography, we reveal the three-dimensional nature of chemical order at the boundaries and show that they exhibit a finite width of chemical intermixing. Furthermore, regions at and adjacent to the anti-phase boundary exhibit antiferroelectric displacements in contrast to the overall paraelectric film. Combining spatial statistics and density functional theory simulations, local antiferroelectric distortions are shown to be confined to and stabilized by chemical disorder. Enabled by the three-dimensional information of multislice ptychography, these results provide insights into the interplay between chemical order and electronic properties to engineer antiferroelectric material response. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Shear-enhanced Liquid Crystal Spinning of Conjugated Polymer Fibers

Authors: Hao Jiang, Chi-yuan Yang, Deyu Tu, Zhu Chen, Wei Huang, Liang-wen Feng, Hengda Sun, Hongzhi Wang, Simone Fabiano, Meifang Zhu, Gang Wang

Abstract: Conjugated polymer fibers can be used to manufacture various soft fibrous optoelectronic devices, significantly advancing wearable devices and smart textiles. Recently, conjugated polymer-based fibrous electronic devices have been widely used in energy conversion, electrochemical sensing, and human-machine interaction. However, the insufficient mechanical properties of conjugated polymer fibers, t… ▽ More Conjugated polymer fibers can be used to manufacture various soft fibrous optoelectronic devices, significantly advancing wearable devices and smart textiles. Recently, conjugated polymer-based fibrous electronic devices have been widely used in energy conversion, electrochemical sensing, and human-machine interaction. However, the insufficient mechanical properties of conjugated polymer fibers, the difficulty in solution processing semiconductors with rigid main chains, and the challenges in large-scale continuous production have limited their further development in the wearable field. We regulated the pi - pi stacking interactions in conjugated polymer molecules below their critical liquid crystal concentration by applying fluid shear stress. We implemented secondary orientation, leading to the continuous fabrication of anisotropic semiconductor fibers. This strategy enables conjugated polymers with rigid backbones to synergistically enhance the mechanical and semiconductor properties of fibers through liquid crystal spinning. Furthermore, conjugated polymer fibers, exhibiting excellent electrochemical performance and high mechanical strength (600 MPa) that essentially meet the requirements for industrialized preparation, maintain stability under extreme temperatures, radiation, and chemical reagents. Lastly, we have demonstrated logic circuits using semiconductor fiber organic electrochemical transistors, showcasing its application potential in the field of wearable fabric-style logic processing. These findings confirm the importance of the liquid crystalline state and solution control in optimizing the performance of conjugated polymer fibers, thus paving the way for develo** a new generation of soft fiber semiconductor devices. △ Less

Submitted 6 March, 2024; v1 submitted 5 March, 2024; originally announced March 2024.

Continuum excitations in a spin-supersolid on a triangular lattice

Authors: M. Zhu, V. Romerio, N. Steiger, S. D. Nabi, N. Murai, S. Ohira-Kawamura, K. Yu. Povarov, Y. Skourski, R. Sibille, L. Keller, Z. Yan, S. Gvasaliya, A. Zheludev

Abstract: Magnetic, thermodynamic, neutron diffraction and inelastic neutron scattering are used to study spin correlations in the easy-axis XXZ triangular lattice magnet K2Co(SeO3)2. Despite the presence of quasi-2D "supersolid" magnetic order, the low-energy excitation spectrum contains no sharp modes and is instead a broad and structured multi-particle continuum. Applying a weak magnetic field drives the… ▽ More Magnetic, thermodynamic, neutron diffraction and inelastic neutron scattering are used to study spin correlations in the easy-axis XXZ triangular lattice magnet K2Co(SeO3)2. Despite the presence of quasi-2D "supersolid" magnetic order, the low-energy excitation spectrum contains no sharp modes and is instead a broad and structured multi-particle continuum. Applying a weak magnetic field drives the system into an m = 1/3 fractional magnetization plateau phase and restores sharp spin wave modes. To some extent, the behavior at zero field can be understood in terms of spin wave decay. However, the presence of clear excitation minima at the M-points of the Brillouin zone suggest that the spinon language may provide a more adequate description, and signals a possible proximity to a Dirac spin liquid state. △ Less

Submitted 26 April, 2024; v1 submitted 29 January, 2024; originally announced January 2024.

Hydrogen-induced tunable remanent polarization in a perovskite nickelate

Authors: Yifan Yuan, Michele Kotiuga, Tae Joon Park, Yuanyuan Ni, Arnob Saha, Hua Zhou, Jerzy T. Sadowski, Abdullah Al-Mahboob, Haoming Yu, Kai Du, Minning Zhu, Sunbin Deng, Ravindra S. Bisht, Xiao Lyu, Chung-Tse Michael Wu, Peide D. Ye, Abhronil Sengupta, Sang-Wook Cheong, Xiaoshan Xu, Karin M. Rabe, Shriram Ramanathan

Abstract: Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor do**, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential ca… ▽ More Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor do**, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential capacitance in thin film capacitors. The space-charge polarization caused by long-range movement and trap** of protons dominates when the electric field exceeds the threshold value. First-principles calculations suggest the polarization originates from the polar structure created by H do**. We find that polarization decays within ~1 second which is an interesting temporal regime for neuromorphic computing hardware design, and we implement the transient characteristics in a neural network to demonstrate unsupervised learning. These discoveries open new avenues for designing novel ferroelectric materials and electrets using light-ion do**. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Comments: 13 pages, 5 figures

Temporal credit assignment for one-shot learning utilizing a phase transition material

Authors: Alessandro R. Galloni, Yifan Yuan, Minning Zhu, Haoming Yu, Ravindra S. Bisht, Chung-Tse Michael Wu, Christine Grienberger, Shriram Ramanathan, Aaron D. Milstein

Abstract: Design of hardware based on biological principles of neuronal computation and plasticity in the brain is a leading approach to realizing energy- and sample-efficient artificial intelligence and learning machines. An important factor in selection of the hardware building blocks is the identification of candidate materials with physical properties suitable to emulate the large dynamic ranges and var… ▽ More Design of hardware based on biological principles of neuronal computation and plasticity in the brain is a leading approach to realizing energy- and sample-efficient artificial intelligence and learning machines. An important factor in selection of the hardware building blocks is the identification of candidate materials with physical properties suitable to emulate the large dynamic ranges and varied timescales of neuronal signaling. Previous work has shown that the all-or-none spiking behavior of neurons can be mimicked by threshold switches utilizing phase transitions. Here we demonstrate that devices based on a prototypical metal-insulator-transition material, vanadium dioxide (VO2), can be dynamically controlled to access a continuum of intermediate resistance states. Furthermore, the timescale of their intrinsic relaxation can be configured to match a range of biologically-relevant timescales from milliseconds to seconds. We exploit these device properties to emulate three aspects of neuronal analog computation: fast (~1 ms) spiking in a neuronal soma compartment, slow (~100 ms) spiking in a dendritic compartment, and ultraslow (~1 s) biochemical signaling involved in temporal credit assignment for a recently discovered biological mechanism of one-shot learning. Simulations show that an artificial neural network using properties of VO2 devices to control an agent navigating a spatial environment can learn an efficient path to a reward in up to 4 fold fewer trials than standard methods. The phase relaxations described in our study may be engineered in a variety of materials, and can be controlled by thermal, electrical, or optical stimuli, suggesting further opportunities to emulate biological learning. △ Less

Submitted 29 September, 2023; originally announced October 2023.

Comments: 37 pages, 5 figures, 6 supplementary figures

Anatomy of spin Hall effect in ferromagnetic metals

Authors: Fanxing Zheng, Jianting Dong, Xinlu Li, Meng Zhu, Ye Zhou, Jia Zhang

Abstract: The spin Hall effect in nonmagnetic materials has been intensively studied and became one of the most crucial spin-charge conversion mechanism in spintronics. However, the spin Hall effect in ferromagnetic metals has been less investigated and remains unclear. In this work, we investigate the spin Hall effect in representative ferromagnetic alloy by using first-principles calculations. We first cl… ▽ More The spin Hall effect in nonmagnetic materials has been intensively studied and became one of the most crucial spin-charge conversion mechanism in spintronics. However, the spin Hall effect in ferromagnetic metals has been less investigated and remains unclear. In this work, we investigate the spin Hall effect in representative ferromagnetic alloy by using first-principles calculations. We first clarify the spin Hall effect into three different types including conventional (CSHE), spin anomalous (SAHE) and magnetic spin Hall effect (MSHE) and then calculate the corresponding spin Hall conductivity and spin Hall angle for (Fe, Co, Ni)Pt, NiFe and CoFe alloy. We find the above three spin Hall mechanisms do coexist in ferromagnetic metals. Particularly, for Pt-based ferromagnetic alloy, a sizable conventional and magnetic spin Hall angles comparable to that of Pt have been predicted. The remarkable unconventional spin Hall effect in ferromagnetic metal may enrich the spin-charge conversion phenomena. For instance, the spin current generated by remarkable MSHE with out-of-plane spin-polarization should be helpful for field-free switching of perpendicular magnetization through spin-orbit torque effect. This work may stimulate future studies on the spin Hall effect in ferromagnetic metals and pave their promising applications for spin-charge conversion devices in spintronics. △ Less

Submitted 6 August, 2023; originally announced August 2023.

Microelectronic Morphogenesis: Progress towards Artificial Organisms

Authors: John S. McCaskill, Daniil Karnaushenko, Minshen Zhu, Oliver G. Schmidt

Abstract: Microelectronic morphogenesis is the creation and maintenance of complex functional structures by microelectronic information within shape-changing materials. Only recently has in-built information technology begun to be used to reshape materials and their functions in three dimensions to form smart microdevices and microrobots. Electronic information that controls morphology is inheritable like i… ▽ More Microelectronic morphogenesis is the creation and maintenance of complex functional structures by microelectronic information within shape-changing materials. Only recently has in-built information technology begun to be used to reshape materials and their functions in three dimensions to form smart microdevices and microrobots. Electronic information that controls morphology is inheritable like its biological counterpart, genetic information, and is set to open new vistas of technology leading to artificial organisms when coupled with modular design and self-assembly that can make reversible microscopic electrical connections. Three core capabilities of cells in organisms, self-maintenance (homeostatic metabolism utilizing free energy), self-containment (distinguishing self from non-self), and self-reproduction (cell division with inherited properties), once well out of reach for technology, are now within the grasp of information-directed materials. Construction-aware electronics can be used to proof-read and initiate game-changing error correction in microelectronic self-assembly. Furthermore, non-contact communication and electronically supported learning enable one to implement guided self-assembly and enhance functionality. This article reviews the fundamental breakthroughs that have opened the pathway to this prospective path, analyzes the extent and way in which the core properties of life can be addressed and discusses the potential and indeed necessity of such technology for sustainable high technology in society. △ Less

Submitted 3 July, 2023; v1 submitted 29 June, 2023; originally announced June 2023.

Comments: Perspective and review on an emerging field. 29 pages, 7 figures, 163 references, 3 supplementary movies available. Journal submission in progress

ACM Class: I.2.9; J.3; J.7; B.1.0; B.7.1

Journal ref: Adv. Mater. 2023, 35, 2306344

Interplay between atomic fluctuations and charge density waves in La$_{2-x}$Sr$_{x}$CuO$_{4}$

Authors: L. Shen, V. Esposito, N. G. Burdet, M. Zhu, A. N. Petsch, T. P. Croft, S. P. Collins, Z. Ren, F. Westermeier, M. Sprung, S. M. Hayden, J. J. Turner, E. Blackburn

Abstract: In the cuprate superconductors, the spatial coherence of the charge density wave (CDW) state grows rapidly below a characteristic temperature $T_\mathrm{CDW}$, the nature of which is debated. We have combined a set of x-ray scattering techniques to study La$_{1.88}$Sr$_{0.12}$CuO$_{4}$ ($T_\mathrm{CDW}$~$\approx$~80\,K) to shed light on this discussion. We observe the emergence of a crystal struct… ▽ More In the cuprate superconductors, the spatial coherence of the charge density wave (CDW) state grows rapidly below a characteristic temperature $T_\mathrm{CDW}$, the nature of which is debated. We have combined a set of x-ray scattering techniques to study La$_{1.88}$Sr$_{0.12}$CuO$_{4}$ ($T_\mathrm{CDW}$~$\approx$~80\,K) to shed light on this discussion. We observe the emergence of a crystal structure, which is consistent with the CDW modulation in symmetry, well above $T_\mathrm{CDW}$. This global structural change also induces strong fluctuations of local atomic disorder in the intermediate temperature region. At $T_\mathrm{CDW}$, the temperature dependence of this structure develops a kink, while the atomic disorder is minimized. We find that the atomic relaxation dynamics cross over from a cooperative to an incoherent response at $T_\mathrm{CDW}$. These results reveal a rich interplay between the CDWs and atomic fluctuations of distinct spatio-temporal scales. For example, the CDW coherence is enhanced on quasi-elastic timescales by incoherent atomic relaxation. △ Less

Submitted 24 April, 2023; originally announced April 2023.

Observation of plaid-like spin splitting in a noncoplanar antiferromagnet

Authors: Yu-Peng Zhu, Xiaobing Chen, Xiang-Rui Liu, Yuntian Liu, Pengfei Liu, Heming Zha, Gexing Qu, Caiyun Hong, Jiayu Li, Zhicheng Jiang, Xiao-Ming Ma, Yu-Jie Hao, Ming-Yuan Zhu, Wen**g Liu, Meng Zeng, Sreehari Jayaram, Malik Lenger, Jianyang Ding, Shu Mo, Kiyohisa Tanaka, Masashi Arita, Zhengtai Liu, Mao Ye, Dawei Shen, Jörg Wrachtrup , et al. (5 additional authors not shown)

Abstract: Spatial, momentum and energy separation of electronic spins in condensed matter systems guides the development of novel devices where spin-polarized current is generated and manipulated. Recent attention on a set of previously overlooked symmetry operations in magnetic materials leads to the emergence of a new type of spin splitting, enabling giant and momentum-dependent spin polarization of energ… ▽ More Spatial, momentum and energy separation of electronic spins in condensed matter systems guides the development of novel devices where spin-polarized current is generated and manipulated. Recent attention on a set of previously overlooked symmetry operations in magnetic materials leads to the emergence of a new type of spin splitting, enabling giant and momentum-dependent spin polarization of energy bands on selected antiferromagnets. Despite the ever-growing theoretical predictions, the direct spectroscopic proof of such spin splitting is still lacking. Here, we provide solid spectroscopic and computational evidence for the existence of such materials. In the noncoplanar antiferromagnet MnTe$_2$, the in-plane components of spin are found to be antisymmetric about the high-symmetry planes of the Brillouin zone, comprising a plaid-like spin texture in the antiferromagnetic (AFM) ground state. Such an unconventional spin pattern, further found to diminish at the high-temperature paramagnetic state, stems from the intrinsic AFM order instead of spin-orbit coupling (SOC). Our finding demonstrates a new type of quadratic spin texture induced by time-reversal breaking, placing AFM spintronics on a firm basis and paving the way for studying exotic quantum phenomena in related materials. △ Less

Submitted 4 January, 2024; v1 submitted 8 March, 2023; originally announced March 2023.

Comments: Version 3, 49 pages, 4 main figures, 13 extended data figures and 2 extended data tables. Nature in press (2024)

Journal ref: Nature 626, 523-528 (2024)

Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces

Authors: Xinlu Li, Meng Zhu, Yaoyuan Wang, Fanxing Zheng, Jianting Dong, Ye Zhou, Long You, Jia Zhang

Abstract: Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW material has largely impedes its development in practical spintronics devices. Inspired by the recently discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic order above room temperature and sizable perp… ▽ More Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW material has largely impedes its development in practical spintronics devices. Inspired by the recently discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic order above room temperature and sizable perpendicular magnetic anisotropy, we investigate the basic electronic structure and magnetic properties of Fe3GaTe2 as well as tunneling magnetoresistance effect in magnetic tunnel junctions (MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principles calculations. It is found that Fe3GaTe2 with highly spin-polarized Fermi surface ensures that such magnetic tunnel junctions may have prominent tunneling magnetoresistance effect at room temperature even comparable to existing conventional AlOx and MgO-based MTJs. Our results suggest that Fe3GaTe2-based MTJs may be the promising candidate for realizing long-waiting full magnetic vdW spintronic devices. △ Less

Submitted 17 November, 2022; originally announced November 2022.

Single crystal synthesis and low-lying electronic structure of V$_3$S$_4$

Authors: Yu-Jie Hao, Ming-Yuan Zhu, Xiao-Ming Ma, Chengcheng Zhang, Hongtao Rong, Qi Jiang, Yichen Yang, Zhicheng Jiang, Xiang-Rui Liu, Yupeng Zhu, Meng Zeng, Ruie Lu, Tianhao Shao, Xin Liu, Hu Xu, Zhengtai Liu, Mao Ye, Dawei Shen, Chaoyu Chen, Chang Liu

Abstract: We report successful growth of millimeter-sized high quality single crystals of V$_3$S$_4$, a candidate topological semimetal belonging to a low-symmetry space group and consisting of only low atomic number elements. Using density functional theory calculations and angle-resolved photoemission spectroscopy, we show that the nonmagnetic phase of monoclinic V$_3$S$_4$ hosts type-II Dirac-like quasip… ▽ More We report successful growth of millimeter-sized high quality single crystals of V$_3$S$_4$, a candidate topological semimetal belonging to a low-symmetry space group and consisting of only low atomic number elements. Using density functional theory calculations and angle-resolved photoemission spectroscopy, we show that the nonmagnetic phase of monoclinic V$_3$S$_4$ hosts type-II Dirac-like quasiparticles which opens a sizable gap due to spin orbit coupling, as well as theoretical multiple nodal lines that are eliminated also by spin orbit coupling. These results suggest that relativistic effects give rise to profound modifications of the topological properties even in compounds with low-weight elements. △ Less

Submitted 25 March, 2023; v1 submitted 9 August, 2022; originally announced August 2022.

Comments: 19 Pages, 3 Figures. To be published in Journal of Alloys and Compounds

Multiplication of freestanding semiconductor membranes from a single wafer by advanced remote epitaxy

Authors: Hyunseok Kim, Yunpeng Liu, Kuangye Lu, Celesta S. Chang, Kuan Qiao, Ki Seok Kim, Bo-In Park, Junseok Jeong, Menglin Zhu, Jun Min Suh, Yongmin Baek, You ** Ji, Sungsu Kang, Sangho Lee, Ne Myo Han, Chansoo Kim, Chanyeol Choi, Xinyuan Zhang, Haozhe Wang, Ling** Kong, Jungwon Park, Kyusang Lee, Geun Young Yeom, Sungkyu Kim, **woo Hwang , et al. (4 additional authors not shown)

Abstract: Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to… ▽ More Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to harvest epitaxial layers using practical processes. Here, we demonstrate a method to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, 2D materials are directly formed on III-N and III-V substrates in epitaxy systems, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of 2D materials and epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because 2D materials allow peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated. △ Less

Submitted 7 April, 2022; originally announced April 2022.

Kinetically-controlled epitaxial growth of Fe$_3$GeTe$_2$ van der Waals ferromagnetic films

Authors: Wenyi Zhou, Alexander J. Bishop, Menglin Zhu, Igor Lyalin, Robert C. Walko, Jay A. Gupta, **woo Hwang, Roland K. Kawakami

Abstract: We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression of an initial tellurium-deficient non-van der Waals phase (Fe$_3$Ge$_2$) prior to realizing epitaxial growth of the vdW FGT phase. Using cross-sectional scanning… ▽ More We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression of an initial tellurium-deficient non-van der Waals phase (Fe$_3$Ge$_2$) prior to realizing epitaxial growth of the vdW FGT phase. Using cross-sectional scanning transmission electron microscopy and scanning tunneling microscopy, we optimize the FGT films to have atomically smooth surfaces and abrupt interfaces with the Ge(111) substrate. The magnetic properties of our high quality material are confirmed through magneto-optic, magnetotransport, and spin-polarized STM studies. Importantly, this demonstrates how the interplay of energetics and kinetics can help tune the re-evaporation rate of chalcogen atoms and interdiffusion from the underlayer, which paves the way for future studies of van der Waals epitaxy. △ Less

Submitted 8 February, 2022; originally announced February 2022.

Comments: 18 pages, 4 figures

Journal ref: ACS Appl. Electron. Mater. 4, 3190 (2022)

Spin fluctuations associated with the collapse of the pseudogap in a cuprate superconductor

Authors: M. Zhu, D. J. Voneshen, S. Raymond, O. J. Lipscombe, C. C. Tam, S. M. Hayden

Abstract: Theories of the origin of superconductivity in cuprates are dependent on an understanding of their normal state which exhibits various competing orders. Transport and thermodynamic measurements on La$_{2-x}$Sr$_x$CuO$_4$ show signatures of a quantum critical point, including a peak in the electronic specific heat $C$ versus do** $p$, near the do** $p^{\star}$ where the pseudogap collapses. The… ▽ More Theories of the origin of superconductivity in cuprates are dependent on an understanding of their normal state which exhibits various competing orders. Transport and thermodynamic measurements on La$_{2-x}$Sr$_x$CuO$_4$ show signatures of a quantum critical point, including a peak in the electronic specific heat $C$ versus do** $p$, near the do** $p^{\star}$ where the pseudogap collapses. The fundamental nature of the fluctuations associated with this peak is unclear. Here we use inelastic neutron scattering to show that close to $T_c$ and near $p^{\star}$, there are very-low-energy collective spin excitations with characteristic energies $\hbar Γ\approx$~5 meV. Cooling and applying a 8.8~T magnetic field creates a mixed state with a stronger magnetic response below 10~meV. We conclude that the low-energy spin-fluctuations are due to the collapse of the pseudogap combined with an underlying tendency to magnetic order. We show that the large specific heat near $p^{\star}$ can be understood in terms of collective spin fluctuations. The spin fluctuations we measure exist across the superconducting phase diagram and may be related to the strange metal behaviour observed in overdoped cuprates. △ Less

Submitted 22 August, 2023; v1 submitted 27 January, 2022; originally announced January 2022.

Comments: Final author version

Journal ref: Nature Physics 19, 99 (2023)

Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions

Authors: Jianting Dong, Xinlu Li, Gautam Gurung, Meng Zhu, Peina Zhang, Fanxing Zheng, Evgeny Y. Tsymbal, Jia Zhang

Abstract: Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order parameter, known as the Néel vector, by electric means is critical to realize concepts of AFM spintronics. Here, we demonstrate that non-collinear AFM metals,… ▽ More Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order parameter, known as the Néel vector, by electric means is critical to realize concepts of AFM spintronics. Here, we demonstrate that non-collinear AFM metals, such as Mn3Sn, exhibit a momentum dependent spin polarization which can be exploited in AFM tunnel junctions to detect the Néel vector. Using first-principles calculations based on density functional theory, we predict a tunneling magnetoresistance (TMR) effect as high as 300% in AFM tunnel junctions with Mn3Sn electrodes, where the junction resistance depends on the relative orientation of their Néel vectors and exhibits four non-volatile resistance states. We argue that the spin-split band structure and the related TMR effect can also be realized in other non-collinear AFM metals like Mn3Ge, Mn3Ga, Mn3Pt, and Mn3GaN. Our work provides a robust method for detecting the Néel vector in non-collinear antiferromagnets via the TMR effect, which may be useful for their application in AFM spintronic devices. △ Less

Submitted 27 March, 2022; v1 submitted 13 December, 2021; originally announced December 2021.

Radiation-hardened and Repairable MoS$_2$ Field Effect Devices with Polymer Solid Electrolyte Gates

Authors: Di Chen, Jiankun Li, Zheng Wei, Xinjian Wei, Maguang Zhu, **g Liu, Guangyu Zhang, Zhiyong Zhang, Jian-Hao Chen

Abstract: As human activities expand into naturally or man-made radiation-prone environment, the need for radiation-hardened (Rad-Hard) electronic hardware surged. The state-of-the-art silicon-based and two-dimensional (2D) materials based Rad-Hard transistors can withstand up to 1 Mrad (Si) of total ionization dose (TID), while higher TID tolerance is being heatedly sought after. Here we present few-layer… ▽ More As human activities expand into naturally or man-made radiation-prone environment, the need for radiation-hardened (Rad-Hard) electronic hardware surged. The state-of-the-art silicon-based and two-dimensional (2D) materials based Rad-Hard transistors can withstand up to 1 Mrad (Si) of total ionization dose (TID), while higher TID tolerance is being heatedly sought after. Here we present few-layer MoS$_2$ Rad-Hard field-effect transistors (FETs) with polymer solid electrolyte (PSE) gate dielectrics. The MoS$_2$ PSE-FETs exhibit a TID tolerance of up to 3.75 Mrad (Si) at a dose rate of 523 rad (Si) s$^{-1}$ and can be repaired with a moderate thermal annealing at 100 $^{\circ}$C for 5 minutes. Combining the excellent intrinsic radiation tolerance and the reparability, the MoS$_2$ PSE-FETs reach a TID tolerance of up to 10 Mrad (Si). Complementary metal-oxide-semiconductor (CMOS)-like MoS$_2$ PSE-inverters have been built and show similar high radiation tolerance. Furthermore, the feasibility of wafer-scale Rad-Hard PSE-inverter array has been demonstrated using chemical vapor deposition (CVD) grown monolayer MoS$_2$. Our studies uncover the potential of 2D materials based PSE devices in future Rad-Hard integrated circuits (ICs). △ Less

Submitted 6 October, 2021; originally announced October 2021.

Comments: 20 pages, 12 figures

Journal ref: Adv. Electron. Mater. 2021,2100619

Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures

Authors: Xinlu Li, Yurong Su, Meng Zhu, Fanxing Zheng, Peina Zhang, Jia Zhang, **g-Tao Lü

Abstract: Spin-dependent transport in a full van der Waals (vdW) giant magnetoresistance (GMR) junctions with the structure of Fe3GeTe2/XTe2/Fe3GeTe2 (X = Pt, Pd) has been investigated by using first-principles calculations. The ballistic conductance, magnetoresistance (MR) and resistance-area product (RA) have been calculated in a current-perpendicular-to-plane (CPP) geometry. A giant magnetoresistance of… ▽ More Spin-dependent transport in a full van der Waals (vdW) giant magnetoresistance (GMR) junctions with the structure of Fe3GeTe2/XTe2/Fe3GeTe2 (X = Pt, Pd) has been investigated by using first-principles calculations. The ballistic conductance, magnetoresistance (MR) and resistance-area product (RA) have been calculated in a current-perpendicular-to-plane (CPP) geometry. A giant magnetoresistance of around 2000% and RA less than 0.3 Ω μm2 have been found in the proposed vdW CPP GMR. In addition, the spin-orbit coupling effect on transport and anisotropy magnetoresistance (AMR) has also been investigated. The calculated AMR is found to be around 20% in Fe3GeTe2/trilayer-PdTe2/Fe3GeTe2 CPP GMR. Both GMR and AMR in the proposed vdW CPP GMR mainly originate from the bulk electronic structure properties of Fe3GeTe2. This work demonstrates a vdW CPP GMR with superior advantages including perpendicular magnetic anisotropy, large GMR, low RA as well as sizable AMR may stimulate future experimental explorations and should be appealing for their applications in spintronic devices including magnetic sensor and memory. △ Less

Submitted 6 October, 2021; originally announced October 2021.

Journal ref: Phys Rev Applied (2021)

Ferroelectric control of Néel vector in L10 type of antiferromagnetic films

Authors: Fanxing Zheng, Meng Zhu, Xinlu Li, Peina Zhang, Jiuzhao Liu, Jianting Dong, Jia Zhang

Abstract: How to efficiently manipulate the Néel vector of antiferromagnets (AFM) by electric methods is one of the major focuses in current antiferromagnetic spintronics. In this work, we investigated the ferroelectric control of magnetism in AFM L10-MnPt/BaTiO3 bilayers structures by using first-principles calculation. We studied the effect of ferroelectric polarization reversal on magnetic crystalline an… ▽ More How to efficiently manipulate the Néel vector of antiferromagnets (AFM) by electric methods is one of the major focuses in current antiferromagnetic spintronics. In this work, we investigated the ferroelectric control of magnetism in AFM L10-MnPt/BaTiO3 bilayers structures by using first-principles calculation. We studied the effect of ferroelectric polarization reversal on magnetic crystalline anisotropy (MCA) of L10-MnPt films with different interface structures. Our results predict a large perpendicular MCA in L10-MnPt films with Pt-O interface, while an in-plane MCA with Mn-O interface when they are interfaced with ferroelectric BaTiO3. In addition, the magnitude of MCA for both interfaces can be modulated efficiently by the polarization reversal of BaTiO3. The ferroelectric control of MCA has been analyzed based on second order perturbation theory, and it can be mainly attributed to the ferroelectric polarization driven redistribution of Pt-5d orbital occupation around Fermi energy. Especially, for Mn-O interface, the Néel vector can be switched between in-plane [100] and [110] directions, or even from in-plane to out-of-plane at certain film thickness by reversing ferroelectric polarization. Our results may provide a non-volatile concept for ferroelectric control of Néel vector in L10-antiferromagnets, which could stimulate experimental investigations on magnetoelectric effect of antiferromagnets and promote its applications in low-power consumption spintronic memory devices. △ Less

Submitted 6 October, 2021; originally announced October 2021.

Journal ref: Phys Rev B (2021)

Emergent interlayer magnetic order via strain-induced orthorhombic distortion in the 5d Mott insulator Sr2IrO4

Authors: S. Shrestha, M. Krautloher, M. Zhu, J. Kim, J. Hwang, J. Kim, J. -W. Kim, B. Keimer, A. Seo

Abstract: We report a La2CuO4-like interlayer antiferromagnetic order in Sr2IrO4 films with large orthorhombic distortion (> 1.5%). The biaxial lattice strain in epitaxial heterostructures of Sr2IrO4/Ca3Ru2O7 lowers the crystal symmetry of Sr2IrO4 from tetragonal (C4) to orthorhombic (C2), guiding the Ir 5d Jeff = 1/2 pseudospin moment parallel to the elongated b-axis via magnetic anisotropy. From resonant… ▽ More We report a La2CuO4-like interlayer antiferromagnetic order in Sr2IrO4 films with large orthorhombic distortion (> 1.5%). The biaxial lattice strain in epitaxial heterostructures of Sr2IrO4/Ca3Ru2O7 lowers the crystal symmetry of Sr2IrO4 from tetragonal (C4) to orthorhombic (C2), guiding the Ir 5d Jeff = 1/2 pseudospin moment parallel to the elongated b-axis via magnetic anisotropy. From resonant X-ray scattering experiments, we observed an antiferromagnetic order in the orthorhombic Sr2IrO4 film whose interlayer stacking pattern is inverted from that of the tetragonal Sr2IrO4 crystal. This interlayer stacking is similar to that of the orthorhombic La2CuO4, implying that the asymmetric interlayer exchange interaction along a and b-directions exceeds the anisotropic interlayer pseudo-dipolar interaction. Our result suggests that strain-induced distortion can provide a delicate knob for tuning the long-range magnetic order in quasi-two-dimensional systems by evoking the competition between the interlayer exchange coupling and the pseudo-dipolar interaction. △ Less

Submitted 13 September, 2021; originally announced September 2021.

Comments: 5 pages, 4 figures

Charge density waves and Fermi-surface reconstruction in the clean overdoped cuprate superconductor Tl2Ba2CuO6+x

Authors: C. C. Tam, M. Zhu, J. Ayres, K. Kummer, F. Yakhou-Harris, J. R. Cooper, A. Carrington, S. M. Hayden

Abstract: Hall effect and quantum oscillation measurements on high temperature cuprate superconductors show that underdoped compositions have a small Fermi surface pocket whereas when heavily overdoped, the pocket increases dramatically in size. The origin of this change in electronic structure has been unclear, but may be related to the high temperature superconductivity. Here we show that the clean overdo… ▽ More Hall effect and quantum oscillation measurements on high temperature cuprate superconductors show that underdoped compositions have a small Fermi surface pocket whereas when heavily overdoped, the pocket increases dramatically in size. The origin of this change in electronic structure has been unclear, but may be related to the high temperature superconductivity. Here we show that the clean overdoped single-layer cuprate Tl2Ba2CuO6+x (Tl2201) displays CDW order with a remarkably long correlation length $ξ\approx 200$ Å which disappears above a hole concentration p_CDW ~ 0.265. We show that the evolution of the electronic properties of Tl2201 as the do** is lowered may be explained by a Fermi surface reconstruction which accompanies the emergence of the CDW below p_CDW. Our results demonstrate importance of CDW correlations in understanding the electronic properties of overdoped cuprates. △ Less

Submitted 9 September, 2021; originally announced September 2021.

Journal ref: Nature Communications 13, 570 (2022)

Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

Authors: Yipeng An, Kun Wang, Shi**g Gong, Yusheng Hou, Chunlan Ma, Mingfu Zhu, Chuanxi Zhao, Tianxing Wang, Shuhong Ma, Heyan Wang, Ruqian Wu, Wuming Liu

Abstract: Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dep… ▽ More Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices. △ Less

Submitted 11 March, 2021; originally announced March 2021.

Comments: 6 pages, 6 figures

Journal ref: npj Computational Materials, 2021

Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe

Authors: Kang Lai, Sailong Ju, Hongen Zhu, Hanwen Wang, Hongjian Wu, Bingjie Yang, Enrui Zhang, Ming Yang, Fangsen Li, Shengtao Cui, Xiaohui Deng, Zheng Han, Mengjian Zhu, Jiayu Dai

Abstract: Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry and thus a thickness-independent character emerges. Here, we apply high-resolution angle-resolved photoemission spectroscopy to directly image the in-plane anisotropic energy bands in m… ▽ More Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry and thus a thickness-independent character emerges. Here, we apply high-resolution angle-resolved photoemission spectroscopy to directly image the in-plane anisotropic energy bands in monoclinic gallium telluride (GaTe). Our first-principles calculations reveal the in-plane anisotropic energy band structure of GaTe measured experimentally is dominated by a strong bulk-surface interaction rather than geometric factors, surface effect and quantum confinement effect. Furthermore, accompanied by the thickness of GaTe increasing from mono- to few-layers, the strong interlayer coupling of GaTe induces direct-indirect-direct band gap transitions and the in-plane anisotropy of hole effective mass is reversed. Our results shed light on the physical origins of in-plane anisotropy of electronic structure in GaTe, paving the way for the design and device applications of nanoelectronics and optoelectronics based on anisotropic layered semiconductors. △ Less

Submitted 22 April, 2022; v1 submitted 27 February, 2021; originally announced March 2021.

Comments: To be published in Communications Physics

Journal ref: Communications Physics (2022) 5:143

Experimental determination of the valence band offsets of $ZnGeN_2$ and $ZnGe_{0.94}Ga_{0.12}N_2$ with $GaN$

Authors: Md Rezaul Karim, Brenton A. Noesges, Benthara Hewage Dinushi Jayatunga, Menglin Zhu, **woo Hwang, Walter R. L. Lambrecht, Leonard J. Brillson, Kathleen Kash, Hong** Zhao

Abstract: A predicted type-II staggered band alignment with an approximately $1.4 eV$ valence band offset at the $ZnGeN_2/GaN$ heterointerface has inspired novel band-engineered $III-N/ZnGeN_2$ heterostructure-based device designs for applications in high performance optoelectronics. We report on the determination of the valence band offset between metalorganic chemical vapor deposition grown… ▽ More A predicted type-II staggered band alignment with an approximately $1.4 eV$ valence band offset at the $ZnGeN_2/GaN$ heterointerface has inspired novel band-engineered $III-N/ZnGeN_2$ heterostructure-based device designs for applications in high performance optoelectronics. We report on the determination of the valence band offset between metalorganic chemical vapor deposition grown $(ZnGe)_{1-x}Ga_{2x}N_2$, for $x = 0$ and $0.06$, and $GaN$ using X-ray photoemission spectroscopy. The valence band of $ZnGeN_2$ was found to lie $1.45-1.65 eV$ above that of $GaN$. This result agrees well with the value predicted by first-principles density functional theory calculations using the local density approximation for the potential profile and quasiparticle self-consistent GW calculations of the band edge states relative to the potential. For $(ZnGe)_{0.94}Ga_{0.12}N_2$ the value was determined to be $1.29 eV$, $~10-20\%$ lower than that of $ZnGeN_2$. The experimental determination of the large band offset between $ZnGeN_2$ and $GaN$ provides promising alternative solutions to address challenges faced with pure III-nitride-based structures and devices. △ Less

Submitted 3 February, 2021; originally announced February 2021.

Field-free deterministic switching of a perpendicularly polarized magnet using unconventional spin-orbit torques in WTe2

Authors: I-Hsuan Kao, Ryan Muzzio, Hantao Zhang, Menglin Zhu, Jacob Gobbo, Daniel Weber, Rahul Rao, Jiahan Li, James H. Edgar, Joshua E. Goldberger, Jiaqiang Yan, David G. Mandrus, **woo Hwang, Ran Cheng, Jyoti Katoch, Simranjeet Singh

Abstract: Spin-orbit torque (SOT) driven deterministic control of the magnetization state of a magnet with perpendicular magnetic anisotropy (PMA) is key to next generation spintronic applications including non-volatile, ultrafast, and energy efficient data storage devices. But, field-free deterministic switching of perpendicular magnetization remains a challenge because it requires an out-of-plane anti-dam… ▽ More Spin-orbit torque (SOT) driven deterministic control of the magnetization state of a magnet with perpendicular magnetic anisotropy (PMA) is key to next generation spintronic applications including non-volatile, ultrafast, and energy efficient data storage devices. But, field-free deterministic switching of perpendicular magnetization remains a challenge because it requires an out-of-plane anti-dam** torque, which is not allowed in conventional spin source materials such as heavy metals (HM) and topological insulators due to the system's symmetry. The exploitation of low-crystal symmetries in emergent quantum materials offers a unique approach to achieve SOTs with unconventional forms. Here, we report the first experimental realization of field-free deterministic magnetic switching of a perpendicularly polarized van der Waals (vdW) magnet employing an out-of-plane anti-dam** SOT generated in layered WTe2 which is a low-crystal symmetry quantum material. The numerical simulations confirm that out-of-plane antidam** torque in WTe2 is responsible for the observed magnetization switching in the perpendicular direction. △ Less

Submitted 22 December, 2020; originally announced December 2020.

Van der Waals Multiferroic Tunnel Junctions

Authors: Yurong Su, Xinlu Li, Meng Zhu, Jia Zhang, Long You, Evgeny Y. Tsymbal

Abstract: Multiferroic tunnel junctions (MFTJs) have aroused significant interest due to their functional properties useful for non-volatile memory devices. So far, however, all the existing MFTJs have been based on perovskite-oxide heterostructures limited by a relatively high resistance-area (RA) product unfavorable for practical applications. Here, using first-principles calculations, we explore spin-dep… ▽ More Multiferroic tunnel junctions (MFTJs) have aroused significant interest due to their functional properties useful for non-volatile memory devices. So far, however, all the existing MFTJs have been based on perovskite-oxide heterostructures limited by a relatively high resistance-area (RA) product unfavorable for practical applications. Here, using first-principles calculations, we explore spin-dependent transport properties of van der Waals (vdW) MFTJs which consist of two-dimensional (2D) ferromagnetic FenGeTe2 (n = 3, 4, 5) electrodes and 2D ferroelectric In2Se3 barrier layers. We demonstrate that such FemGeTe2/In2Se3/FenGeTe2 (m, n = 3, 4, 5) MFTJs exhibit multiple non-volatile resistance states associated with different polarization orientation of the ferroelectric In2Se3 layer and magnetization alignment of the two ferromagnetic FenGeTe2 layers. We find a remarkably low RA product which makes the proposed vdW MFTJs superior to the conventional MFTJs in terms of their promise for non-volatile memory applications. △ Less

Submitted 7 December, 2020; originally announced December 2020.

Journal ref: Nano Letters(2020)

Detection of Acoustic Plasmons in Hole-Doped Lanthanum and Bismuth Cuprate Superconductors Using Resonant Inelastic X-Ray Scattering

Authors: Abhishek Nag, M. Zhu, Matias Bejas, J. Li, H. C. Robarts, Hiroyuki Yamase, A. N. Petsch, D. Song, H. Eisaki, A. C. Walters, M. Garcia-Fernandez, Andres Greco, S. M. Hayden, Ke-** Zhou

Abstract: High Tc superconductors show a rich variety of phases associated with their charge degrees of freedom. Valence charges can give rise to charge ordering or acoustic plasmons in these layered cuprate superconductors. While charge ordering has been observed for both hole- and electron-doped cuprates, acoustic plasmons have only been found in electron-doped materials. Here, we use resonant inelastic X… ▽ More High Tc superconductors show a rich variety of phases associated with their charge degrees of freedom. Valence charges can give rise to charge ordering or acoustic plasmons in these layered cuprate superconductors. While charge ordering has been observed for both hole- and electron-doped cuprates, acoustic plasmons have only been found in electron-doped materials. Here, we use resonant inelastic X-ray scattering (RIXS) to observe the presence of acoustic plasmons in two families of hole-doped cuprate superconductors [La2-xSrxCuO4 (LSCO) and Bi2Sr1.6La0.4CuO6+d (Bi2201)], crucially completing the picture. Interestingly, in contrast to the quasi-static charge ordering which manifests at both Cu and O sites, the observed acoustic plasmons are predominantly associated with the O sites, revealing a unique dichotomy in the behaviour of valence charges in hole-doped cuprates. △ Less

Submitted 15 December, 2020; v1 submitted 14 July, 2020; originally announced July 2020.

Comments: 11 pages, 7 figures + Supplementary Information

Journal ref: Phys. Rev. Lett. 125, 257002 (2020)

Coherent Growth and Characterization of van der Waals 1T-VSe$_2$ Layers on GaAs(111)B Using Molecular Beam Epitaxy

Authors: Tiancong Zhu, Dante J. O'Hara, Brenton A. Noesges, Menglin Zhu, Jacob J. Repicky, Mark R. Brenner, Leonard J. Brillson, **woo Hwang, Jay A. Gupta, Roland K. Kawakami

Abstract: We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectrosc… ▽ More We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy indicate high quality thin films. Further studies show that monolayer VSe$_2$ films on GaAs are not air-stable and are susceptible to oxidation within a matter of hours, which indicates that a protective cap** layer should be employed for device applications. This work demonstrates that VSe$_2$, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for 2D/3D hybrid devices. △ Less

Submitted 11 April, 2020; originally announced April 2020.

Comments: 14 pages, 4 figures

Journal ref: Phys. Rev. Materials 4, 084002 (2020)

Magnetic Properties and Electronic Structure of Magnetic Topological Insulator MnBi$_2$Se$_4$

Authors: Tiancong Zhu, Alexander J. Bishop, Tong Zhou, Menglin Zhu, Dante J. O'Hara, Alexander A. Baker, Shuyu Cheng, Robert C. Walko, Jacob J. Repicky, Jay A. Gupta, Chris M. Jozwiak, Eli Rotenberg, **woo Hwang, Igor Žutić, Roland K. Kawakami

Abstract: The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of… ▽ More The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of multilayer trigonal MnBi$_2$Se$_4$ with alternating-layer molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) identify a well-ordered multilayer van der Waals (vdW) crystal with septuple-layer base units in agreement with the trigonal structure. Systematic thickness-dependent magnetometry studies illustrate the layered antiferromagnetic ordering as predicted by theory. Angle-resolved photoemission spectroscopy (ARPES) reveals the gapless Dirac-like surface state of MnBi$_2$Se$_4$, which demonstrates that MnBi$_2$Se$_4$ is a topological insulator above the magnetic ordering temperature. These systematic studies show that MnBi$_2$Se$_4$ is a promising candidate for exploring the rich topological phases of layered antiferromagnetic topological insulators. △ Less

Submitted 17 March, 2020; originally announced March 2020.

Comments: 20 pages, 9 figures

Reduction of the spin susceptibility in the superconducting state of Sr2RuO4 observed by polarized neutron scattering

Authors: A. N. Petsch, M. Zhu, Mechthild Enderle, Z. Q. Mao, Y. Maeno, I. I. Mazin, S. M. Hayden

Abstract: Recent observations [A.~Pustogow et al. Nature 574, 72 (2019)] of a drop of the $^{17}$O nuclear magnetic resonance (NMR) Knight shift in the superconducting state of Sr$_2$RuO$_4$ challenged the popular picture of a chiral odd-parity paired state in this compound. Here we use polarized neutron scattering to show that there is a $34 \pm 6$ % drop in the magnetic susceptibility at the ruthenium sit… ▽ More Recent observations [A.~Pustogow et al. Nature 574, 72 (2019)] of a drop of the $^{17}$O nuclear magnetic resonance (NMR) Knight shift in the superconducting state of Sr$_2$RuO$_4$ challenged the popular picture of a chiral odd-parity paired state in this compound. Here we use polarized neutron scattering to show that there is a $34 \pm 6$ % drop in the magnetic susceptibility at the ruthenium site below the superconducting transition temperature. Measurements are made at lower fields $H \sim \tfrac{1}{3} H_{c2}$ than a previous study allowing the suppression to be observed. Our results are consistent with the recent NMR observations and rule out the chiral odd-parity $\mathbf{d}=\hat{\mathbf{z}}(k_x\pm ik_y)$ state. The observed susceptibility is consistent with several recent proposals including even-parity $B_{1g}$ and odd-parity helical states. △ Less

Submitted 26 August, 2020; v1 submitted 7 February, 2020; originally announced February 2020.

Comments: New version with Supplementary Material discussing orbital contributions to the susceptibility, Fermi liquid corrections and a two fluid model

Journal ref: Phys. Rev. Lett. 125, 217004 (2020)

Enhanced superconductivity in few-layer TaS$_2$ due to healing by oxygenation

Authors: J. Bekaert, E. Khestanova, D. G. Hopkinson, J. Birkbeck, N. Clark, M. Zhu, D. A. Bandurin, R. Gorbachev, S. Fairclough, Y. Zou, M. Hamer, D. J. Terry, J. J. P. Peters, A. M. Sanchez, B. Partoens, S. J. Haigh, M. V. Milošević, I. V. Grigorieva

Abstract: When approaching the atomically thin limit, defects and disorder play an increasingly important role in the properties of two-dimensional materials. Superconductivity is generally thought to be vulnerable to these effects, but here we demonstrate the contrary in the case of oxygenation of ultrathin tantalum disulfide (TaS$_2$). Our first-principles calculations show that incorporation of oxygen in… ▽ More When approaching the atomically thin limit, defects and disorder play an increasingly important role in the properties of two-dimensional materials. Superconductivity is generally thought to be vulnerable to these effects, but here we demonstrate the contrary in the case of oxygenation of ultrathin tantalum disulfide (TaS$_2$). Our first-principles calculations show that incorporation of oxygen into the TaS$_2$ crystal lattice is energetically favourable and effectively heals sulfur vacancies typically present in these crystals, thus restoring the carrier density to the intrinsic value of TaS$_2$. Strikingly, this leads to a strong enhancement of the electron-phonon coupling, by up to 80% in the highly-oxygenated limit. Using transport measurements on fresh and aged (oxygenated) few-layer TaS$_2$, we found a marked increase of the superconducting critical temperature ($T_{\mathrm{c}}$) upon aging, in agreement with our theory, while concurrent electron microscopy and electron-energy loss spectroscopy confirmed the presence of sulfur vacancies in freshly prepared TaS$_2$ and incorporation of oxygen into the crystal lattice with time. Our work thus reveals the mechanism by which certain atomic-scale defects can be beneficial to superconductivity and opens a new route to engineer $T_{\mathrm{c}}$ in ultrathin materials. △ Less

Submitted 16 December, 2019; originally announced December 2019.

Evidence for photoinduced sliding of the charge-order condensate in La$_{1.875}$Ba$_{0.125}$CuO$_4$

Authors: Matteo Mitrano, Sangjun Lee, Ali A. Husain, Minhui Zhu, Gilberto de la Peña Munoz, Stella X. -L. Sun, Young Il Joe, Alexander H. Reid, Scott F. Wandel, Giacomo Coslovich, William Schlotter, Tim van Driel, John Schneeloch, G. D. Gu, Nigel Goldenfeld, Peter Abbamonte

Abstract: We use femtosecond resonant soft x-ray scattering to measure the ultrafast optical melting of charge-order correlations in La$_{1.875}$Ba$_{0.125}$CuO$_4$. By analyzing both the energy-resolved and energy-integrated order parameter dynamics, we find evidence of a short-lived nonequilibrium state, whose features are compatible with a sliding charge density wave coherently set in motion by the pump.… ▽ More We use femtosecond resonant soft x-ray scattering to measure the ultrafast optical melting of charge-order correlations in La$_{1.875}$Ba$_{0.125}$CuO$_4$. By analyzing both the energy-resolved and energy-integrated order parameter dynamics, we find evidence of a short-lived nonequilibrium state, whose features are compatible with a sliding charge density wave coherently set in motion by the pump. This transient state exhibits shifts in both the quasielastic line energy and its wave vector, as expected from a classical Doppler effect. The wave vector change is indeed found to directly follow the pump propagation direction. These results demonstrate the existence of sliding charge order behavior in an unconventional charge density wave system and underscore the power of ultrafast optical excitation as a tool to coherently manipulate electronic condensates. △ Less

Submitted 18 November, 2019; originally announced November 2019.

Comments: 8 pages, 9 figures, 39 references

Journal ref: Phys. Rev. B 100, 205125 (2019)

Electrochemically-stable ligands bridge photoluminescence-electroluminescence gap of quantum dots

Authors: Chaodan Pu, Xingliang Dai, Yufei Shu, Meiyi Zhu, Yunzhou Deng, Yizheng **, Xiaogang Peng

Abstract: Colloidal quantum dots (QDs) are promising emitters for electroluminescence devices (QD light-emitting-diodes, QLEDs). Though QDs have been synthesized with efficient and stable photoluminescence, inheriting their superior luminescence in QLEDs remains challenging. This is commonly attributed to unbalanced charge injection and/or interfacial exciton quenching in the devices, instead of lack of sui… ▽ More Colloidal quantum dots (QDs) are promising emitters for electroluminescence devices (QD light-emitting-diodes, QLEDs). Though QDs have been synthesized with efficient and stable photoluminescence, inheriting their superior luminescence in QLEDs remains challenging. This is commonly attributed to unbalanced charge injection and/or interfacial exciton quenching in the devices, instead of lack of suited QD materials. Here, a general but previously overlooked degradation channel in QLEDs, i.e., operando electrochemical reactions of surface ligands with injected charge carriers, is identified after systematic studies of various combination of core/shell QDs and ligands. Applying electrochemically-inert ligands to highly photoluminescent QDs is developed to bridge their photoluminescence-electroluminescence gap. This material-design principle is general for boosting electroluminescence efficiency and lifetime of the QLEDs, resulting in record-long operational lifetimes for both red-emitting QLEDs (T95 > 3800 hours at 1000 cd m-2) and blue-emitting QLEDs (T50 >10,000 hours at 100 cd m-2). Our study provides a critical guideline for the QDs to be used in optoelectronic and electronic devices. △ Less

Submitted 20 October, 2019; originally announced October 2019.

Comments: 46 pages, 14 figures, 2 tables (main text and supporting information merged), submitted

Planar topological Hall effect in a uniaxial van der Waals ferromagnet Fe3GeTe2

Authors: Yurong You, Yuanyuan Gong, Hang Li, Zefang Li, Mengmei Zhu, Jiaxuan Tang, Enke Liu, Yuan Yao, Guizhou Xu, Feng Xu, Wenhong Wang

Abstract: In this work, we reported the observation of a novel planar topological Hall effect (PTHE) in single crystal of Fe3GeTe2, a paradigmatic two-dimensional ferromagnet with strong uniaxial anisotropy. The Hall effect and magnetoresistance varied periodically when the external magnetic field rotated in the ac (or bc) plane, while the PTHE emerged and maintained robust with field swept across the hard-… ▽ More In this work, we reported the observation of a novel planar topological Hall effect (PTHE) in single crystal of Fe3GeTe2, a paradigmatic two-dimensional ferromagnet with strong uniaxial anisotropy. The Hall effect and magnetoresistance varied periodically when the external magnetic field rotated in the ac (or bc) plane, while the PTHE emerged and maintained robust with field swept across the hard-magnetized ab plane. The PTHE covers the whole temperature region below Tc (~150 K) and a comparatively large value is observed at 100 K. Emergence of an internal gauge field was proposed to explain the origin of this large PTHE, which is either generated by the possible topological domain structure of uniaxial Fe3GeTe2 or the non-coplanar spin structure formed during the in-plane magnetization. Our results promisingly provide an alternative detection method to the in-plane skyrmion formation and may bring brand-new prospective to magneto-transport studies in condensed matter physics. △ Less

Submitted 22 July, 2019; v1 submitted 4 July, 2019; originally announced July 2019.

Comments: 15 pages, 4 figures

Journal ref: Phys. Rev. B 100, 134441 (2019)

Electrical Switching of Tristate Antiferromagnetic Néel Order in $α$-Fe$_{2}$O$_{3}$ Epitaxial Films

Authors: Yang Cheng, Sisheng Yu, Menglin Zhu, **woo Hwang, Fengyuan Yang

Abstract: The ability to manipulate antiferromagnetic (AF) moments is a key requirement for the emerging field of antiferromagnetic spintronics. Electrical switching of bi-state AF moments has been demonstrated in metallic AFs, CuMnAs and Mn$_2$Au. Recently, current-induced "saw-tooth" shaped Hall resistance was reported in Pt/NiO bilayers, while its mechanism is under debate. Here, we report the first demo… ▽ More The ability to manipulate antiferromagnetic (AF) moments is a key requirement for the emerging field of antiferromagnetic spintronics. Electrical switching of bi-state AF moments has been demonstrated in metallic AFs, CuMnAs and Mn$_2$Au. Recently, current-induced "saw-tooth" shaped Hall resistance was reported in Pt/NiO bilayers, while its mechanism is under debate. Here, we report the first demonstration of convincing, non-decaying, step-like electrical switching of tri-state Néel order in Pt/$α$-Fe$_2$O$_3$ bilayers. Our experimental data, together with Monte-Carlo simulations, reveal the clear mechanism of the switching behavior of $α$-Fe$_2$O$_3$ Néel order among three stable states. We also show that the observed "saw-tooth" Hall resistance is due to an artifact of Pt, not AF switching, while the signature of AF switching is step-like Hall signals. This demonstration of electrical control of magnetic moments in AF insulator (AFI) films will greatly expand the scope of AF spintronics by leveraging the large family of AFIs. △ Less

Submitted 9 August, 2022; v1 submitted 11 June, 2019; originally announced June 2019.

Comments: matches the published version

Journal ref: Phys. Rev. Lett. 124, 027202 (2020)

Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers

Authors: Yang Cheng, Sisheng Yu, Adam S. Ahmed, Menglin Zhu, **woo Hwang, Fengyuan Yang

Abstract: To date, magnetic proximity effect (MPE) has only been conclusively observed in ferromagnet (FM) based systems. We report the observation of anomalous Hall effect and anisotropic magnetoresistance in angular dependent magnetoresistance (ADMR) measurements in Pt on antiferromagnetic (AF) $α$-Fe$_2$O$_3$(0001) epitaxial films at 10 K, which provide evidence for the MPE. The Néel order of $α$-Fe$_2$O… ▽ More To date, magnetic proximity effect (MPE) has only been conclusively observed in ferromagnet (FM) based systems. We report the observation of anomalous Hall effect and anisotropic magnetoresistance in angular dependent magnetoresistance (ADMR) measurements in Pt on antiferromagnetic (AF) $α$-Fe$_2$O$_3$(0001) epitaxial films at 10 K, which provide evidence for the MPE. The Néel order of $α$-Fe$_2$O$_3$ and the induced magnetization in Pt show a unique ADMR compared with all other FM and AF systems. A macrospin response model is established and can explain the AF spin configuration and all main ADMR features in the Pt/$α$-Fe$_2$O$_3$ bilayers. △ Less

Submitted 9 August, 2022; v1 submitted 11 June, 2019; originally announced June 2019.

Comments: matches the published version

Journal ref: Phys. Rev. B 100, 220408 (2019)

Magnetic borophenes from evolutionary search

Authors: Meng-Hong Zhu, Xiao-Ji Weng, Guoying Gao, Shuai Dong, Ling-Fang Lin, Wei-Hua Wang, Qiang Zhu, Artem R. Oganov, Xiao Dong, Yongjun Tian, Xiang-Feng Zhou, Hui-Tian Wang

Abstract: A computation methodology based on ab initio evolutionary algorithms and the spin-polarized density functional theory was developed to predict two-dimensional (2D) magnetic materials. Its application to a model system borophene reveals an unexpected rich magnetism and polymorphism. A stable borophene with nonzero thickness was an antiferromagnetic (AFM) semiconductor from first-principles calculat… ▽ More A computation methodology based on ab initio evolutionary algorithms and the spin-polarized density functional theory was developed to predict two-dimensional (2D) magnetic materials. Its application to a model system borophene reveals an unexpected rich magnetism and polymorphism. A stable borophene with nonzero thickness was an antiferromagnetic (AFM) semiconductor from first-principles calculations, which can be further turned into a half metal by finite electron do**. In this borophene, the buckling and coupling among three atomic layers are not only responsible for the magnetism, but also result in an out-of-plane negative Poissons ratios under uniaxial tension, making it the first elemental material possessing auxetic and magnetic properties simultaneously. △ Less

Submitted 7 February, 2019; originally announced February 2019.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. B 99, 205412 (2019)

Gate tunable giant anisotropic resistance in ultra-thin GaTe

Authors: Hanwen Wang, Mao-Lin Chen, Mengjian Zhu, Yaning Wang, Baojuan Dong, Xingdan Sun, Xiaorong Zhang, Shimin Cao, Xiaoxi Li, Jianqi Huang, Lei Zhang, Weilai Liu, Dongming Sun, Yu Ye, Teng Yang, Huaihong Guo, Chengbing Qin, Liantuan Xiao, **g Zhang, Jianhao Chen, Zheng Vitto Han, Zhidong Zhang

Abstract: In crystals, the duplication of atoms often follows different periodicity along different directions. It thus gives rise to the so called anisotropy, which is usually even more pronounced in two dimensional (2D) materials due to the absence of $\textbf{z}$ dimension. Indeed, in the emerging 2D materials, electrical anisotropy has been one of the focuses in recent experimental efforts. However, key… ▽ More In crystals, the duplication of atoms often follows different periodicity along different directions. It thus gives rise to the so called anisotropy, which is usually even more pronounced in two dimensional (2D) materials due to the absence of $\textbf{z}$ dimension. Indeed, in the emerging 2D materials, electrical anisotropy has been one of the focuses in recent experimental efforts. However, key understandings of the in-plane anisotropic resistance in low-symmetry 2D materials, as well as demonstrations of model devices taking advantage of it, have proven difficult. Here, we show that, in few-layered semiconducting GaTe, electrical conductivity along $\textbf{x}$ and $\textbf{y}$ directions of the 2D crystal can be gate tuned from a ratio of less than one order to as large as 10$^{3}$. This effect is further demonstrated to yield an anisotropic memory resistor behaviour in ultra-thin GaTe, when equipped with an architecture of van der Waals floating gate. Our findings of gate tunable giant anisotropic resistance (GAR) effect pave the way for potential applications in nano-electronics such as multifunctional directional memories in the 2D limit. △ Less

Submitted 14 January, 2019; originally announced January 2019.

Comments: 9 pages, 4 figures

Journal ref: Nature Communications 10, Article number: 2302 (2019)

Ultrafast time-resolved x-ray scattering reveals diffusive charge order dynamics in La$_{2-x}$Ba$_x$CuO$_4$

Authors: Matteo Mitrano, Sangjun Lee, Ali A. Husain, Luca Delacretaz, Minhui Zhu, Gilberto de la Peña Munoz, Stella Sun, Young Il Joe, Alexander H. Reid, Scott F. Wandel, Giacomo Coslovich, William Schlotter, Tim van Driel, John Schneeloch, Genda D. Gu, Sean Hartnoll, Nigel Goldenfeld, Peter Abbamonte

Abstract: Charge order is universal among high-T$_c$ cuprates but its relevance to superconductivity is not established. It is widely believed that, while static order competes with superconductivity, dynamic order may be favorable and even contribute to Cooper pairing. We use time-resolved resonant soft x-ray scattering to study the collective dynamics of the charge order in the prototypical cuprate, La… ▽ More Charge order is universal among high-T$_c$ cuprates but its relevance to superconductivity is not established. It is widely believed that, while static order competes with superconductivity, dynamic order may be favorable and even contribute to Cooper pairing. We use time-resolved resonant soft x-ray scattering to study the collective dynamics of the charge order in the prototypical cuprate, La$_{2-x}$Ba$_x$CuO$_4$. We find that, at energy scales $0.4$ meV $ \lesssim ω\lesssim 2$ meV, the excitations are overdamped and propagate via Brownian-like diffusion. At energy scales below 0.4 meV the charge order exhibits dynamic critical scaling, displaying universal behavior arising from propagation of topological defects. Our study implies that charge order is dynamic, so may participate tangibly in superconductivity. △ Less

Submitted 12 September, 2018; v1 submitted 14 August, 2018; originally announced August 2018.

Comments: 31 pages, 4 figures, 8 supplementary figures, revised paragraph formatting

Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures

Authors: Matthew Hamer, Endre Tóvári, Mengjian Zhu, Michael D. Thompson, Alexander Mayorov, Jonathon Prance, Yong** Lee, Richard P. Haley, Zakhar R. Kudrynskyi, Amalia Patanè, Daniel Terry, Zakhar D. Kovalyuk, Klaus Ensslin, Andrey V. Kretinin, Andre Geim, Roman Gorbachev

Abstract: Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gati… ▽ More Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications. △ Less

Submitted 15 May, 2018; originally announced May 2018.

Comments: 13 pages, 3 figures

Journal ref: Nano Lett., 2018, 18 (6), p 3950

Unusual suppression of the superconducting energy gap and critical temperature in atomically thin NbSe2

Authors: Ekaterina Khestanova, John Birkbeck, Mengjian Zhu, Yang Cao, Geliang Yu, Davit Ghazaryan, Jun Yin, Helmuth Berger, Laszlo Forro, Takashi Taniguchi, Kenji Watanabe, Roman V. Gorbachev, Artem Mishchenko, Andre K. Geim, Irina V. Grigorieva

Abstract: It is well known that superconductivity in thin films is generally suppressed with decreasing thickness. This suppression is normally governed by either disorder-induced localization of Cooper pairs, weakening of Coulomb screening, or generation and unbinding of vortex-antivortex pairs as described by the Berezinskii-Kosterlitz-Thouless (BKT) theory. Defying general expectations, few-layer NbSe2 -… ▽ More It is well known that superconductivity in thin films is generally suppressed with decreasing thickness. This suppression is normally governed by either disorder-induced localization of Cooper pairs, weakening of Coulomb screening, or generation and unbinding of vortex-antivortex pairs as described by the Berezinskii-Kosterlitz-Thouless (BKT) theory. Defying general expectations, few-layer NbSe2 - an archetypal example of ultrathin superconductors - has been found to remain superconducting down to monolayer thickness. Here we report measurements of both the superconducting energy gap and critical temperature in high-quality monocrystals of few-layer NbSe2, using planar-junction tunneling spectroscopy and lateral transport. We observe a fully developed gap that rapidly reduces for devices with the number of layers N < 5, as does their ctitical temperature. We show that the observed reduction cannot be explained by disorder, and the BKT mechanism is also excluded by measuring its transition temperature that for all N remains very close to Tc. We attribute the observed behavior to changes in the electronic band structure predicted for mono- and bi- layer NbSe2 combined with inevitable suppression of the Cooper pair density at the superconductor-vacuum interface. Our experimental results for N > 2 are in good agreement with the dependences of the gap and Tc expected in the latter case while the effect of band-structure reconstruction is evidenced by a stronger suppression of the gap and the disappearance of its anisotropy for N = 2. The spatial scale involved in the surface suppression of the density of states is only a few angstroms but cannot be ignored for atomically thin superconductors. △ Less

Submitted 13 March, 2018; originally announced March 2018.

Comments: 21 pages, including supporting information

Journal ref: Nano Lett. 18, 2623-2629 (2018)

Temperature- and field-driven spin reorientations in triple-layer ruthenate Sr$_4$Ru$_3$O$_{10}$

Authors: M. Zhu, P. G. Li, Y. Wang, H. B. Cao, W. Tian, H. D. Zhang, B. D. Phelan, Z. Q. Mao, X. Ke

Abstract: Sr$_4$Ru$_3$O$_{10}$, the $n$ = 3 member of the Ruddlesden-Popper type ruthenate Sr$_{n+1}$Ru$_n$O$_{3n+1}$, is known to exhibit a peculiar metamagnetic transition in an in-plane magnetic field. However, the nature of both the temperature- and field-dependent phase transitions remains as a topic of debate. Here, we have investigated the magnetic transitions of Sr$_4$Ru$_3$O$_{10}$ via single-cryst… ▽ More Sr$_4$Ru$_3$O$_{10}$, the $n$ = 3 member of the Ruddlesden-Popper type ruthenate Sr$_{n+1}$Ru$_n$O$_{3n+1}$, is known to exhibit a peculiar metamagnetic transition in an in-plane magnetic field. However, the nature of both the temperature- and field-dependent phase transitions remains as a topic of debate. Here, we have investigated the magnetic transitions of Sr$_4$Ru$_3$O$_{10}$ via single-crystal neutron diffraction measurements. At zero field, we find that the system undergoes a ferromagnetic transition with both in-plane and out-of-plane magnetic components at $T_{c}$ ~ 100 K. Below $T^{*}$ ~ 50 K, the magnetic moments incline continuously toward the out-of-plane direction. At $T$ ~ 1.5 K, where the spins are nearly aligned along the $c$ axis, a spin reorientation occurs above a critical field $B_c$, giving rise to a spin component perpendicular to the plane defined by the field direction and the $c$ axis. We suggest that both the temperature- and field-driven spin reorientations are associated with a change in the magnetocrystalline anisotropy, which is strongly coupled to the lattice degrees of freedom. This study elucidates the long-standing puzzles on the zero-field magnetic orders of Sr$_4$Ru$_3$O$_{10}$ and provides new insights into the nature of the field-induced metamagnetic transition. △ Less

Submitted 22 February, 2018; originally announced February 2018.

Comments: 20 pages, 4 figures, to appear in Sci. Rep

Tip** the magnetic instability in paramagnetic Sr$_3$Ru$_2$O$_7$ by Fe impurities

Authors: M. Zhu, Y. Wang, P. G. Li, J. J. Ge, W. Tian, D. Keavney, Z. Q. Mao, X. Ke

Abstract: We report the magnetic and electronic properties of the bilayer ruthenate Sr$_3$Ru$_2$O$_7$ upon Fe substitution for Ru. We find that Sr$_3$(Ru$_{1-x}$Fe$_x$)$_2$O$_7$ shows a spin-glass-like phase below 4 K for $x$ = 0.01 and commensurate E-type antiferromagnetically ordered insulating ground state characterized by the propagation vector $q_c$ = (0.25 0.25 0) for $x$ $\geq$ 0.03, respectively, in… ▽ More We report the magnetic and electronic properties of the bilayer ruthenate Sr$_3$Ru$_2$O$_7$ upon Fe substitution for Ru. We find that Sr$_3$(Ru$_{1-x}$Fe$_x$)$_2$O$_7$ shows a spin-glass-like phase below 4 K for $x$ = 0.01 and commensurate E-type antiferromagnetically ordered insulating ground state characterized by the propagation vector $q_c$ = (0.25 0.25 0) for $x$ $\geq$ 0.03, respectively, in contrast to the paramagnetic metallic state in the parent compound with strong spin fluctuations occurring at wave vectors $q$ = (0.09 0 0) and (0.25 0 0). The observed antiferromagnetic ordering is quasi-two-dimensional with very short correlation length along the $c$ axis, a feature similar to the Mn-doped Sr$_3$Ru$_2$O$_7$. Our results suggest that this ordered ground state is associated with the intrinsic magnetic instability in the pristine compound, which can be readily tipped by the local magnetic coupling between the 3$d$ orbitals of the magnetic dopants and Ru 4$d$ orbitals. △ Less

Submitted 10 February, 2018; originally announced February 2018.

Comments: 19 pages, 4 figures

Journal ref: Phys. Rev. B 95, 174430 (2017)

Colossal magnetoresistance in a Mott insulator via magnetic field-driven insulator-metal transition

Authors: M. Zhu, J. Peng, T. Zou, K. Prokes, S. D. Mahanti, T. Hong, Z. Q. Mao, G. Q. Liu, X. Ke

Abstract: We present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca$_3$Ru$_2$O$_7$. Such an insulator-metal transition is accompanied by changes in both lattice and magnetic structures. Our findings have important implications because a magnetic field usually stabilizes the insulat… ▽ More We present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca$_3$Ru$_2$O$_7$. Such an insulator-metal transition is accompanied by changes in both lattice and magnetic structures. Our findings have important implications because a magnetic field usually stabilizes the insulating ground state in a Mott-Hubbard system, thus calling for a deeper theoretical study to reexamine the magnetic field tuning of Mott systems with magnetic and electronic instabilities and spin-lattice-charge coupling. This study further provides a model approach to search for CMR systems other than manganites, such as Mott insulators in the vicinity of the boundary between competing phases. △ Less

Submitted 7 February, 2018; originally announced February 2018.

Comments: 10 pages, 4 figures

Journal ref: Phys. Rev. Lett. 116, 216401 (2016)