Showing 1–50 of 85 results for author: Zhou, G

Gigantic-oxidative atomically layered epitaxy for designed complex oxides

Authors: Guangdi Zhou, Haoliang Huang, Fengzhe Wang, Heng Wang, Qishuo Yang, Zihao Nie, Wei Lv, Cui Ding, Yueying Li, Danfeng Li, Yujie Sun, Junhao Lin, Guang-Ming Zhang, Qi-Kun Xue, Zhuoyu Chen

Abstract: In designing material functionality within the intricate realm of transition metal oxides, lattice structure and d-orbital occupancy are two principal determinants of the correlated physical properties, such as superconductivity. However, the modulation of these two factors is inherently limited by the need to balance thermodynamic stability, kinetic mobility, and synthesis precision, particularly… ▽ More In designing material functionality within the intricate realm of transition metal oxides, lattice structure and d-orbital occupancy are two principal determinants of the correlated physical properties, such as superconductivity. However, the modulation of these two factors is inherently limited by the need to balance thermodynamic stability, kinetic mobility, and synthesis precision, particularly for oxidation-demanding phases. We introduce a methodology, namely the gigantic-oxidative atomically layered epitaxy (GOAL-Epitaxy), enhancing oxidation power 3-4 orders of magnitude beyond oxide molecular beam epitaxy (OMBE) and pulsed laser deposition (PLD), while ensuring atomic-layer-by-layer growth of designed complex structures. Consequently, thermodynamic stability is markedly augmented at elevated temperatures, improving growth kinetics. We demonstrate the accurate synthesis of complex nickelates and cuprates, especially an artificially designed structure as a parent of high-temperature superconductivity, in which alternating single and double NiO2 layers possess distinct nominal d-orbital occupancy. The GOAL-Epitaxy enables material discovery within the vastly broadened growth parameter space. △ Less

Submitted 24 June, 2024; originally announced June 2024.

Direct Observation of Dendrites Nucleation in Li Metal Battery by Machine Learning Accelerated Molecular Simulations under Realistic Electrochemical Conditions

Authors: Tai** Hu, Haichao Huang, Guobing Zhou, Xinyan Wang, Zheng Cheng, Fangjia Fu, Xiaoxu Wang, Fuzhi Dai, Kuang Yu, Shenzhen Xu

Abstract: Uncontrollable dendrites growth during electrochemical cycles leads to low Coulombic efficiency and critical safety issues in Li metal batteries. Hence, a comprehensive understanding of the dendrite formation mechanism is essential for further enhancing the performance of Li metal batteries. Machine learning accelerated molecular dynamics (MD) simulations can provide atomic-scale resolution for va… ▽ More Uncontrollable dendrites growth during electrochemical cycles leads to low Coulombic efficiency and critical safety issues in Li metal batteries. Hence, a comprehensive understanding of the dendrite formation mechanism is essential for further enhancing the performance of Li metal batteries. Machine learning accelerated molecular dynamics (MD) simulations can provide atomic-scale resolution for various key processes at an ab-initio level accuracy. However, traditional MD simulation tools hardly capture Li electrochemical depositions, due to lack of an electrochemical constant potential (ConstP) condition. In this work, we propose a ConstP approach that combines a machine learning force field with the charge equilibration method to reveal the dynamic process of Li dendrites nucleation at Li metal anode surfaces. Our results show that both dead Li cluster formation and inhomogeneous Li electro-depositions can induce Li dendrites nucleation. We further reveal that the local aggregation of Li atoms in amorphous inorganic components of solid electrolyte interphase is the key factor triggering the nucleation process. Overall, our simulations provide microscopic insights for Li dendrites formations in Li metal anodes. More importantly, we present an efficient and accurate simulation method for modeling realistic ConstP conditions, which holds considerable potential for broader applications in modeling of complex electrochemical interfaces. △ Less

Submitted 3 July, 2024; v1 submitted 20 June, 2024; originally announced June 2024.

Near IR bandgap semiconductive 2D conjugated metal-organic framework with rhombic lattice and high mobility

Authors: Lukas Sporrer, Guojun Zhou, Mingchao Wang, Vasileios Balos, Sergio Revuelta, Kamil Jastrzembski, Markus Loeffler, Petko Petkov, Thomas Heine, Angieszka Kuc, Enrique Canovas, Zhehao Huang, Xinliang Feng, Renhao Dong

Abstract: Two-dimensional conjugated metal-organic frameworks (2D c-MOFs) are emerging as a unique class of 2D electronic materials. However, intrinsically semiconducting 2D c-MOFs with gaps in the Vis-NIR and high charge carrier mobility have been rare. Most of the reported semiconducting 2D c-MOFs are metallic (i.e. gapless), which limits their use in applications where larger band gaps are needed for log… ▽ More Two-dimensional conjugated metal-organic frameworks (2D c-MOFs) are emerging as a unique class of 2D electronic materials. However, intrinsically semiconducting 2D c-MOFs with gaps in the Vis-NIR and high charge carrier mobility have been rare. Most of the reported semiconducting 2D c-MOFs are metallic (i.e. gapless), which limits their use in applications where larger band gaps are needed for logic devices. Herein, we design a new D2h-geometric ligand, 2,3,6,7,11,12,15,16-octahydroxyphenanthro(9,10b)triphenylene (OHPTP), and synthesize the first example of a 2D c-MOF single crystal (OHPTP-Cu) with a rhombohedral pore geometry after coordination with copper. The continuous rotation electron diffraction (cRED) analysis unveils the orthorhombic crystal structure at the atomic level with a unique AB layer stacking. The resultant Cu2(OHPTP) is a p-type semiconductor with an indirect band gap of about 0.50 eV and exhibits high electrical conductivity of 0.10 S cm-1 and high charge carrier mobility of 10.0 cm2V-1s-1. Density-functional theory calculations underline the predominant role of the out-of-plane charge transport in this semiquinone-based 2D c-MOFs. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Comments: 11 pages 5 figures

Journal ref: Angew. Chem. Int. Ed. 2023, 62, e202300186

Correlated Charge Density Wave Insulators in Chirally Twisted Triple Bilayer Graphene

Authors: Wenxuan Wang, Gengdong Zhou, Wenlu Lin, Zuo Feng, Yijie Wang, Miao Liang, Zaizhe Zhang, Min Wu, Le Liu, Kenji Watanabe, Takashi Taniguchi, Wei Yang, Guangyu Zhang, Kaihui Liu, **hua Gao, Yang Liu, X. C. Xie, Zhida Song, Xiaobo Lu

Abstract: Electrons residing in flat-band system can play a vital role in triggering spectacular phenomenology due to relatively large interactions and spontaneous breaking of different degeneracies. In this work we demonstrate chirally twisted triple bilayer graphene, a new moiré structure formed by three pieces of helically stacked Bernal bilayer graphene, as a highly tunable flat-band system. In addition… ▽ More Electrons residing in flat-band system can play a vital role in triggering spectacular phenomenology due to relatively large interactions and spontaneous breaking of different degeneracies. In this work we demonstrate chirally twisted triple bilayer graphene, a new moiré structure formed by three pieces of helically stacked Bernal bilayer graphene, as a highly tunable flat-band system. In addition to the correlated insulators showing at integer moiré fillings, commonly attributed to interaction induced symmetry broken isospin flavors in graphene, we observe abundant insulating states at half-integer moiré fillings, suggesting a longer-range interaction and the formation of charge density wave insulators which spontaneously break the moiré translation symmetry. With weak out-of-plane magnetic field applied, as observed half-integer filling states are enhanced and more quarter-integer filling states appear, pointing towards further quadrupling moiré unit cells. The insulating states at fractional fillings combined with Hartree-Fock calculations demonstrate the observation of a new type of correlated charge density wave insulators in graphene and points to a new accessible twist manner engineering correlated moiré electronics. △ Less

Submitted 22 May, 2024; originally announced May 2024.

High-field magnetoelectric coupling and successive magnetic transitions in Mn-doped polar antiferromagnet Ni3TeO6

Authors: J. H. Zhang, L. Lin, C. Dong, Y. T. Chang, J. F. Wang, C. L. Lu, P. Z. Chen, W. J. Zhai, G. Z. Zhou, L. Huang, Y. S. Tang, S. H. Zheng, M. F. Liu, X. H. Zhou, Z. B. Yan, J. -M. Liu

Abstract: Among the 3d transition metal ions doped polar Ni3TeO6, Mn-doped Ni3TeO6 has stimulated great interest due to its high magnetic ordering temperature and complex magnetic phases, but the mechanism of magnetoelectric (ME) coupling is far from understood. Herein we report our systematic investigation of the chemical control of magnetism, metamagnetic transition, and ME properties of Ni3-xMnxTeO6 sing… ▽ More Among the 3d transition metal ions doped polar Ni3TeO6, Mn-doped Ni3TeO6 has stimulated great interest due to its high magnetic ordering temperature and complex magnetic phases, but the mechanism of magnetoelectric (ME) coupling is far from understood. Herein we report our systematic investigation of the chemical control of magnetism, metamagnetic transition, and ME properties of Ni3-xMnxTeO6 single crystals in high magnetic field (H) up to 52 T. We present a previously unreported weak ferromagnetic behavior appeared in the ab plane below 9.5 K in addition to the incommensurate helical and commensurate collinear antiferromagnetic states. In the low-field region, a spin-flop type metamagnetic transition without any hysteresis occurs at Hc1 for H // c, while another metamagnetic transition accompanied with a change in electric polarization is observed at Hc2 in the high-field region both for H // c and H // ab above 30 K, which can be attributed to the sudden rotation of magnetic moments at Ni2 sites. The ME measurements reveal that a first-order ME effect is observed in the low-T and low-H regions, while a second-order ME coupling term appears above 30 K in the magnetic field range of Hc1 < H < Hc2 for H // c and H < Hc2 for H // ab, both becoming significant with increasing temperature. Eventually, they are dominated by the second-order ME effect near the antiferromagnetic transition temperature. The present work demonstrates that Ni3-xMnxTeO6 is an exotic magnetoelectric material compared with Ni3TeO6 and its derivatives, thereby providing insights to better understand the magnetism and ME coupling in Ni3TeO6 and its derivatives. △ Less

Submitted 29 May, 2024; v1 submitted 24 May, 2024; originally announced May 2024.

Comments: 30 pages with 8 figures

Journal ref: Phys. Rev. B 109, 184112 (2024)

Correlated insulators and charge density wave states in chirally twisted triple bilayer graphene

Authors: Geng-Dong Zhou, Yi-Jie Wang, Wen-Xuan Wang, Xiao-Bo Lu, Zhi-Da Song

Abstract: Motivated by recent experimental observations of displacement-field-tuned correlated insulators at integer and half-integer fillings in chirally twisted triple bilayer graphene (CTTBG), we study the single-particle and interacting physics of CTTBG. We find that there are two inequivalent stacking orders, {\it i.e.}, ABABBC and ABABAB, and both exhibit flat bands with nontrivial topology. We then u… ▽ More Motivated by recent experimental observations of displacement-field-tuned correlated insulators at integer and half-integer fillings in chirally twisted triple bilayer graphene (CTTBG), we study the single-particle and interacting physics of CTTBG. We find that there are two inequivalent stacking orders, {\it i.e.}, ABABBC and ABABAB, and both exhibit flat bands with nontrivial topology. We then use the Hartree-Fock approximation to calculate the rich phase diagram of CTTBG at all integer and half-integer fillings in both stacking orders and under the vertical displacement field. Under a small displacement field, the groundstates are flavor polarized states for ABABBC stacking order and intervalley coherent states for ABABAB stacking order at all integer and half-integer fillings. A larger displacement field will turn them into layer-polarized states. At half-integer fillings, the groundstates also exhibit charge density wave (CDW) order. For ABABAB stacking, the groundstates are always $2\times1$ stripe state among a range of displacement fields. For ABABBC stacking, the groundstates are also $2\times1$ stripe states under a small displacement field and a larger displacement will possibly favor further translation-symmetry-breaking, depending on filling and the direction of the displacement field. We demonstrate that the CDW states observed in the experiment can originate from the strong Coulomb interaction of the flat band electrons. △ Less

Submitted 21 May, 2024; originally announced May 2024.

Magnetic structure and magnetoelectric coupling in antiferromagnet Co5(TeO3)4Cl2

Authors: B. Yu, L. Huang, J. S. Li, L. Lin, V. Ovidiu Garlea, Q. Zhang, T. Zou, J. C. Zhang, J. Peng, Y. S. Tang, G. Z. Zhou, J. H. Zhang, S. H. Zheng, M. F. Liu, Z. B. Yan, X. H. Zhou, S. Dong, J. G. Wan, J. -M. Liu

Abstract: The van der Waals (vdW) layered multiferroics, which host simultaneous ferroelectric and magnetic orders, have attracted attention not only for their potentials to be utilized in nanoelectric devices and spintronics, but also offer alternative opportunities for emergent physical phenomena. To date, the vdW layered multiferroic materials are still very rare. In this work, we have investigated the m… ▽ More The van der Waals (vdW) layered multiferroics, which host simultaneous ferroelectric and magnetic orders, have attracted attention not only for their potentials to be utilized in nanoelectric devices and spintronics, but also offer alternative opportunities for emergent physical phenomena. To date, the vdW layered multiferroic materials are still very rare. In this work, we have investigated the magnetic structure and magnetoelectric effects in Co5(TeO3)4Cl2, a promising new multiferroic compound with antiferromagnetic (AFM) Neel point TN = 18 K. The neutron powder diffraction reveals the non-coplanar AFM state with preferred Neel vector along the c-axis, while a spin re-orientation occurring between 8 K and 15 K is identified, which results from the distinct temperature dependence of the non-equivalent Co sites moment in Co5(TeO3)4Cl2. What is more, it is found that Co5(TeO3)4Cl2 is one of the best vdW multiferroics studied so far in terms of the multiferroic performance. The measured linear ME coefficient exhibits the emergent oscillation dependence of the angle between magnetic field and electric field, and the maximal value is as big as 45 ps/m. It is suggested that Co5(TeO3)4Cl2 is an appreciated platform for exploring the emergent multiferroicity in vdW layered compounds. △ Less

Submitted 15 May, 2024; originally announced May 2024.

Comments: 31 pages, 9 figures

Journal ref: Phys. Rev. B 109, 184106(2024)

Growth of two-inch free-standing heteroepitaxial diamond on Ir/YSZ/Si (001) substrates via laser-patterned templates

Authors: Pengfei Qu, Peng **, Guangdi Zhou, Zhen Wang, Zhanguo Wang

Abstract: In this paper, 2-inch free-standing diamonds were prepared by using heteroepitaxy on composite Ir/YSZ/Si (001) substrates. To release stress, patterned templates were fabricated using laser etching after the initial growth of 50-nm-diamond. Then, the subsequent growth was completed on a patterned template. The full width at half maximum of the diamond (400) and (311) X-ray rocking curves were 313.… ▽ More In this paper, 2-inch free-standing diamonds were prepared by using heteroepitaxy on composite Ir/YSZ/Si (001) substrates. To release stress, patterned templates were fabricated using laser etching after the initial growth of 50-nm-diamond. Then, the subsequent growth was completed on a patterned template. The full width at half maximum of the diamond (400) and (311) X-ray rocking curves were 313.5 and 359.3 arcsecs, respectively. Strong band-edge emission in the cathodoluminescence spectrum of the resulting diamond revealed excellent crystalline quality. Furthermore, the 2D map** of Raman spectra was conducted on a $2 mm \times 2 mm$ area located at the center of the 2-inch sample with a thickness of $400 μm$. The result showed an average peak width of $2.85 \pm 0.36 cm^{-1}$ and residual stress of $-0.03 \pm 0.37 GPa$. The dislocation density, determined by counting etching pits generated from $ H_2/O_2$ plasma etching, was estimated to be around $2.2 \times 10^7 cm^{-2}$. These results evidence that the laser-patterned method can effectively release stress during the growth of large-size diamonds, offering a simpler and more cost-effective alternative to the traditional photolithography-patterned scheme. △ Less

Submitted 12 April, 2024; originally announced April 2024.

Comments: 13 pages, 5 figures

Anomalous quantum scattering and transport of electrons with Mexican-hat dispersion induced by electrical potential

Authors: Jiating Yao, Benliang Zhou, Xiaoying Zhou, Xianbo Xiao, Guanghui Zhou

Abstract: We theoretically study the quantum scattering and transport of electrons with Mexican-hat dispersion through both step and rectangular potential barriers by using the transfer matrix method. Owing to the torus-like iso-energy lines of the Mexican-hat dispersion, we observe the presence of double reflections and double transmissions in both two different barrier scenarios, i.e., the normal reflecti… ▽ More We theoretically study the quantum scattering and transport of electrons with Mexican-hat dispersion through both step and rectangular potential barriers by using the transfer matrix method. Owing to the torus-like iso-energy lines of the Mexican-hat dispersion, we observe the presence of double reflections and double transmissions in both two different barrier scenarios, i.e., the normal reflection (NR), retro-reflection (RR), normal transmission (NT), and specular transmission (ST).For the step potential with electrons incident from the large wavevector, the transmission is primarily governed by NT with nearly negligible ST, while the reflection is dominant by RR (NR) within (outside) the critical angle. Additionally, for electrons incident from the small wavevector, the NT can be reduced to zero by adjusting the barrier, resulting in a significant enhancement of ST and RR. For the rectangular barrier, the transmission and reflection spectra resemble those of the step barrier, but there are two kinds of resonant tunneling which can lead to perfect NT or ST. There exists a negative differential conductance (NDC) effect in the conductance spectrum. The conductance and the peak-to-valley ratio of the NDC effect can be effectively controlled by adjusting the height and width of the barrier as well as the incident energy. Our results provide a deeper understanding of the electron states governed by the Mexican-hat dispersion. △ Less

Submitted 14 March, 2024; originally announced March 2024.

Comments: 8 pages, 5 figures

Direct observation of electronic band gap and hot carrier dynamics in GeAs semiconductor

Authors: Zailan Zhang, Jiuxiang Zhang, Gangqiang Zhou, Jiyuan Xu, Xiao Zhang, Hamid Oughaddou, Weiyan Qi, Evangelos Papalazarou, Luca Perfetti, Zhesheng Chen, Azzedine Bendounan, Marino Marsi

Abstract: Germanium arsenide (GeAs) is a layered semiconductor with remarkably anisotropic physical, thermoelectric and optical properties, and a promising candidate for multifunctional devices based on in-plane polarization dependent response. Understanding the underlying mechanism of such devices requires the knowledge of GeAs electronic band structure and of the hot carrier dynamics in its conduction ban… ▽ More Germanium arsenide (GeAs) is a layered semiconductor with remarkably anisotropic physical, thermoelectric and optical properties, and a promising candidate for multifunctional devices based on in-plane polarization dependent response. Understanding the underlying mechanism of such devices requires the knowledge of GeAs electronic band structure and of the hot carrier dynamics in its conduction band, whose details are still unclear. In this work, we investigated the properties of occupied and photoexcited states of GeAs in energy-momentum space, by combining scanning tunneling spectroscopy (STS), angle-resolved photoemission spectroscopy (ARPES) and time-resolved ARPES. We found that, GeAs is an indirect gap semiconductor having an electronic gap of 0.8 eV, for which the conduction band minimum (CBM) is located at the Gamma point while the valence band maximum (VBM) is out of Gamma. A Stark broadening of the valence band is observed immediately after photoexcitation, which can be attributed to the effects of the electrical field at the surface induced by inhomogeneous screening. Moreover, the hot electrons relaxation time of 1.56 ps down to the CBM which is dominated from both inter-valley and intra-valley coupling. Besides their relevance for our understanding of GeAs, these findings present general interest for the design on high performance thermoelectric and optoelectronic devices based on 2D semiconductors. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Molecular Pairing in Twisted Bilayer Graphene Superconductivity

Authors: Yi-Jie Wang, Geng-Dong Zhou, Shi-Yu Peng, Biao Lian, Zhi-Da Song

Abstract: We propose a theory for how the weak phonon-mediated interaction ($J_{\rm A}\!=\!1\!\sim\!4$meV) wins over the prohibitive Coulomb repulsion ($U\!=\!30\!\sim\!60$meV) and leads to a superconductor in magic-angle twisted bilayer graphene (MATBG). We find the pairing mechanism akin to that in the A$_3$C$_{60}$ family of molecular superconductors: Each AA stacking region of MATBG resembles a C… ▽ More We propose a theory for how the weak phonon-mediated interaction ($J_{\rm A}\!=\!1\!\sim\!4$meV) wins over the prohibitive Coulomb repulsion ($U\!=\!30\!\sim\!60$meV) and leads to a superconductor in magic-angle twisted bilayer graphene (MATBG). We find the pairing mechanism akin to that in the A$_3$C$_{60}$ family of molecular superconductors: Each AA stacking region of MATBG resembles a C$_{60}$ molecule, in that optical phonons can dynamically lift the degeneracy of the moiré orbitals, in analogy to the dynamical Jahn-Teller effect. Such induced $J_{\rm A}$ has the form of an inter-valley anti-Hund's coupling and is less suppressed than $U$ by the Kondo screening near a Mott insulator. Additionally, we also considered an intra-orbital Hund's coupling $J_{\rm H}$ that originates from the on-site repulsion of a carbon atom. Under a reasonable approximation of the realistic model, we prove that the renormalized local interaction between quasi-particles must have a pairing (negative) channel in a doped correlated insulator at $ν=\pm(2+δν)$, albeit the bare interaction is positive definite. The proof is non-perturbative and based on exact asymptotic behaviors of the vertex function imposed by Ward identities. Existence of an optimal $U$ for superconductivity is predicted. We also analyzed the pairing symmetry. In a large area of the parameter space of $J_{\rm A}$, $J_{\rm H}$, the ground state has a nematic $d$-wave singlet pairing, which, however, can lead to a $p$-wave-like nodal structure due to the Berry's phase on Fermi surfaces (or Euler obstruction). △ Less

Submitted 28 April, 2024; v1 submitted 1 February, 2024; originally announced February 2024.

Comments: Typos fixed

Magnetic properties of the quasi-one-dimensional S = 1 spin chain antiferromagnet BaNiTe2O7

Authors: Xiyu Chen, Yiming Gao, Meifeng Liu, Tao Zou, V. Ovidiu Garlea, Clarina dela Cruz, Zhen Liu, Wen**g Niu, Leili Tan, Guanzhong Zhou, Fei Liu, Shuhan Zheng, Zhen Ma, Xiuzhang Wang, Hong Li, Shuai Dong, Jun-Ming Liu

Abstract: We report a quasi-one-dimensional S = 1 spin chain compound BaNiTe2O7. This magnetic system has been investigated by magnetic susceptibility, specific heat, and neutron powder diffraction. These results indicate that BaNiTe2O7 develops a short-range magnetic correlation around T ~ 22 K. With further cooling, an antiferromagnetic phase transition is observed at TN ~ 5.4 K. Neutron powder diffractio… ▽ More We report a quasi-one-dimensional S = 1 spin chain compound BaNiTe2O7. This magnetic system has been investigated by magnetic susceptibility, specific heat, and neutron powder diffraction. These results indicate that BaNiTe2O7 develops a short-range magnetic correlation around T ~ 22 K. With further cooling, an antiferromagnetic phase transition is observed at TN ~ 5.4 K. Neutron powder diffraction revealed antiferromagnetic noncollinear order with a commensurate propagation vector k = (1/2, 1, 0). The refined magnetic moment size of Ni2+ at 1.5 K is 1.84μB, and its noncollinear spin texture is confirmed by first-principles calculations. Inelastic neutron-scattering results and density functional theory calculations confirmed the quasi-one-dimensional nature of the spin systems. △ Less

Submitted 1 October, 2023; originally announced October 2023.

Comments: 18 pages, 5 figures

Journal ref: Published in Physical Review Materials 7, 094404 (2023)

A Spin-dependent Machine Learning Framework for Transition Metal Oxide Battery Cathode Materials

Authors: Tai** Hu, Teng Yang, Jianchuan Liu, Bin Deng, Zhengtao Huang, Xiaoxu Wang, Fuzhi Dai, Guobing Zhou, Fangjia Fu, ** Tuo, Ben Xu, Shenzhen Xu

Abstract: Owing to the trade-off between the accuracy and efficiency, machine-learning-potentials (MLPs) have been widely applied in the battery materials science, enabling atomic-level dynamics description for various critical processes. However, the challenge arises when dealing with complex transition metal (TM) oxide cathode materials, as multiple possibilities of d-orbital electrons localization often… ▽ More Owing to the trade-off between the accuracy and efficiency, machine-learning-potentials (MLPs) have been widely applied in the battery materials science, enabling atomic-level dynamics description for various critical processes. However, the challenge arises when dealing with complex transition metal (TM) oxide cathode materials, as multiple possibilities of d-orbital electrons localization often lead to convergence to different spin states (or equivalently local minimums with respect to the spin configurations) after ab initio self-consistent-field calculations, which causes a significant obstacle for training MLPs of cathode materials. In this work, we introduce a solution by incorporating an additional feature - atomic spins - into the descriptor, based on the pristine deep potential (DP) model, to address the above issue by distinguishing different spin states of TM ions. We demonstrate that our proposed scheme provides accurate descriptions for the potential energies of a variety of representative cathode materials, including the traditional Li$_x$TMO$_2$ (TM=Ni, Co, Mn, $x$=0.5 and 1.0), Li-Ni anti-sites in Li$_x$NiO$_2$ ($x$=0.5 and 1.0), cobalt-free high-nickel Li$_x$Ni$_{1.5}$Mn$_{0.5}$O$_4$ ($x$=1.5 and 0.5), and even a ternary cathode material Li$_x$Ni$_{1/3}$Co$_{1/3}$Mn$_{1/3}$O$_2$ ($x$=1.0 and 0.67). We highlight that our approach allows the utilization of all ab initio results as a training dataset, regardless of the system being in a spin ground state or not. Overall, our proposed approach paves the way for efficiently training MLPs for complex TM oxide cathode materials. △ Less

Submitted 3 September, 2023; originally announced September 2023.

Kondo Phase in Twisted Bilayer Graphene -- A Unified Theory for Distinct Experiments

Authors: Geng-Dong Zhou, Yi-Jie Wang, Ninghua Tong, Zhi-Da Song

Abstract: A number of interesting physical phenomena have been discovered in magic-angle twisted bilayer graphene (MATBG), such as superconductivity, correlated gapped and gapless phases, etc. The gapped phases are believed to be symmetry-breaking states described by mean-field theories, whereas gapless phases exhibit features beyond mean field. This work, combining poor man's scaling, numerical renormaliza… ▽ More A number of interesting physical phenomena have been discovered in magic-angle twisted bilayer graphene (MATBG), such as superconductivity, correlated gapped and gapless phases, etc. The gapped phases are believed to be symmetry-breaking states described by mean-field theories, whereas gapless phases exhibit features beyond mean field. This work, combining poor man's scaling, numerical renormalization group, and dynamic mean-field theory, demonstrates that the gapless phases are the heavy Fermi liquid state with some symmetries broken and the others preserved. We adopt the recently proposed topological heavy fermion model for MATBG with effective local orbitals around AA-stacking regions and Dirac fermions surrounding them. At zero temperature and most non-integer fillings, the ground states are found to be heavy Fermi liquids and exhibit Kondo resonance peaks. The Kondo temperature $T_K$ is found at the order of 1meV. A higher temperature than $T_K$ will drive the system into a metallic LM phase where disordered LM's and a Fermi liquid coexist. At integer fillings $\pm1,\pm2$, $T_K$ is suppressed to zero or a value weaker than RKKY interaction, leading to Mott insulators or symmetry-breaking states. This theory offers a unified explanation for several experimental observations, such as zero-energy peaks and quantum-dot-like behaviors in STM, the Pomeranchuk effect, and the saw-tooth feature of inverse compressibility, etc. For future experimental verification, we predict that the Fermi surface in the gapless phase will shrink upon heating - as a characteristic of the heavy Fermi liquid. We also conjecture that the heavy Fermi liquid is the parent state of the observed unconventional superconductivity because the Kondo screening reduces the overwhelming Coulomb interaction (~60meV) to a rather small effective interaction (~1meV) comparable to possible weak attractive interactions. △ Less

Submitted 17 January, 2024; v1 submitted 11 January, 2023; originally announced January 2023.

Comments: 14+12 pages, 5+3 figures. Published version

Journal ref: Phys. Rev. B. 109, 045419 (2024)

Tripling energy storage density through order-disorder transition induced polar nanoregions in PbZrO3 thin films by ion implantation

Authors: Yongjian Luo, Changan Wang, Chao Chen, Yuan Gao, Fei Sun, Caiwen Li, Xiaozhe Yin, Chunlai Luo, Ulrich Kentsch, Xiangbin Cai, Mei Bai, Zhen Fan, Minghui Qin, Min Zeng, Jiyan Dai, Guofu Zhou, Xubing Lu, Xiaojie Lou, Shengqiang Zhou, Xingsen Gao, Deyang Chen, Jun-Ming Liu

Abstract: Dielectric capacitors are widely used in pulsed power electronic devices due to their ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced energy storage density, both maximum polarization (Pmax) and breakdown strength (Eb) need to be improved simultaneously. However, these two key parameters are inversely correlated. In this study, order-disorder transition ind… ▽ More Dielectric capacitors are widely used in pulsed power electronic devices due to their ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced energy storage density, both maximum polarization (Pmax) and breakdown strength (Eb) need to be improved simultaneously. However, these two key parameters are inversely correlated. In this study, order-disorder transition induced polar nanoregions (PNRs) have been achieved in PbZrO3 thin films by making use of the low-energy ion implantation, enabling us overcome the trade-off between high polarizability and breakdown strength, which leads to the tripling of the energy storage density from 20.5 J/cm3 to 62.3 J/cm3 as well as the great enhancement of breakdown strength. This approach could be extended to other dielectric oxides to improve the energy storage performance, providing a new pathway for tailoring the oxide functionalities. △ Less

Submitted 28 November, 2022; originally announced November 2022.

Structural distortion induced Dzyaloshinskii-Moriya interaction in monolayer CrI3 at van der Waals heterostructures

Authors: Hongxing Li, Wei-Bing Zhang, Guanghui Zhou

Abstract: The van der Waals (vdW) magnetic heterostructures provide flexible ways to realize particular magnetic properties that possess both scientific and practical significance. Here, by firstprinciples calculation, we predict strong Dzyaloshinskii-Moriya interactions (DMIs) by constructing CrI3/Metal vdW heterostructures. The underlaying mechanisms are ascribed the large spin-orbital coupling (SOC) of t… ▽ More The van der Waals (vdW) magnetic heterostructures provide flexible ways to realize particular magnetic properties that possess both scientific and practical significance. Here, by firstprinciples calculation, we predict strong Dzyaloshinskii-Moriya interactions (DMIs) by constructing CrI3/Metal vdW heterostructures. The underlaying mechanisms are ascribed the large spin-orbital coupling (SOC) of the I atom and the structural distortion in CrI3 layer caused by interlayer interaction. This is different from the traditional way that deposit magnetic films on substrate to generate DMI, wherein DMI is dominated by interlayer hybridization and large SOC of substrates. In addition, both Heisenberg exchange and magnetic anisotropy are modulated dramatically, such as Heisenberg exchange is nearly doubled on Au(111), and the out-of-plane magnetism is enhanced by 88% on Ir(111). Our work may provide a experimentally accessible strategy to induce DMI in vdW magnetic materials, which will be helpful to the design of spintronics devices. △ Less

Submitted 19 October, 2022; originally announced October 2022.

Deterministic manipulation of multi-state polarization switching in multiferroic thin films

Authors: Chao Chen, Deyang Chen, Peilian Li, Minghui Qin, Xubing Lu, Guofu Zhou, Xingsen Gao, Jun-Ming Liu

Abstract: Deterministically controllable multi-state polarizations in ferroelectric materials are promising for the application of next-generation non-volatile multi-state memory devices. However, the achievement of multi-state polarizations has been inhibited by the challenge of selective control of switching pathways. Here we report an approach to selectively control 71° ferroelastic and 180° ferroelectri… ▽ More Deterministically controllable multi-state polarizations in ferroelectric materials are promising for the application of next-generation non-volatile multi-state memory devices. However, the achievement of multi-state polarizations has been inhibited by the challenge of selective control of switching pathways. Here we report an approach to selectively control 71° ferroelastic and 180° ferroelectric switching paths by combining the out-of-plane electric field and in-plane trailing field in multiferroic BiFeO3 thin films with periodically ordered 71° domain wall. Four-state polarization states can be deterministically achieved and reversibly controlled through precisely selecting different switching paths. Our studies reveal the ability to obtain multiple polarization states for the realization of multi-state memories and magnetoelectric coupling based devices. △ Less

Submitted 19 August, 2022; originally announced August 2022.

High rectifying performance of heterojunctions with interface between armchair C$_3$N nanoribbons with and without edge H-passivation

Authors: Jie Zhang, Wence Ding, Xiaobo Li, Guanghui Zhou

Abstract: Two-dimensional polyaniline with C$_3$N stoichiometry, is a newly fabricated layered material that has been expected to possess fascinating electronic, thermal, mechanical and chemical properties. The nature of its counterpart nano-ribbons/structures offering even more tunability in property because of the unique quantum confinement and edge effect, however, has not been revealed sufficiently. Her… ▽ More Two-dimensional polyaniline with C$_3$N stoichiometry, is a newly fabricated layered material that has been expected to possess fascinating electronic, thermal, mechanical and chemical properties. The nature of its counterpart nano-ribbons/structures offering even more tunability in property because of the unique quantum confinement and edge effect, however, has not been revealed sufficiently. Here, using the first-principles calculation based on density functional theory and nonequilibrium Green's function technique, we first perform a study on the electron band structure of armchair C$_3$N nanoribbons (AC$_3$NNRs) without and with H-passivation. The calculated results show that the pristine AC$_3$NNRs are metal, while the H-passivated ones are either direct or indirect band gap semiconductors depending on the detailed edge atomic configurations. Then we propose a lateral planar homogenous junction with an interface between the pristine and H-passivated AC$_3$NNRs, in which forms a Schottky-like barrier. Interestingly, our further transport calculation demonstrates that this AC$_3$NNRs-based heterojunction exhibits a good rectification behavior. In specification, the average rectification ratio (RR) can reach up to $10^3$ in the bias regime from 0.2 to 0.4 V. Particularly, extending the length of semiconductor part in the heterojunction leads to the decrease of the current through the junction, but the RR can be enlarged obviously. The average RR increases to the order of $10^4$ in the bias from 0.25 to 0.40 V, with the boosted maximum up to $10^5$ at 0.35 V. The findings of this work may be serviceable for the design of functional nanodevices based on AC$_3$NNRs in the future. △ Less

Submitted 22 April, 2022; originally announced April 2022.

Comments: 9 pages, 8 figures

Multiferroic van der Waals heterostructure FeCl$_2$/Sc$_2$CO$_2$: Nonvolatile electrically switchable electronic and spintronic properties

Authors: Liemao Cao, Xiaohui Deng, Guanghui Zhou, Shi-Jun Liang, Chuong V. Nguyen, L. K. Ang, Yee Sin Ang

Abstract: Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructure composed of ferromagnetic FeCl$_2$ monolayer and ferroelectric Sc$_2$CO$_2$ monolayer using first-principles density functional theory and quantum transport simulat… ▽ More Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructure composed of ferromagnetic FeCl$_2$ monolayer and ferroelectric Sc$_2$CO$_2$ monolayer using first-principles density functional theory and quantum transport simulations. We show that FeCl$_2$/Sc$_2$CO$_2$ heterostructure can be reversibly switched from semiconducting to half-metallic behavior by electrically modulating the ferroelectric polarization states of Sc$_2$CO$_2$. Intriguingly, the half-metallic phase exhibits a Type-III broken gap band alignment, which can be beneficial for tunnelling field-effect transistor application. We perform a quantum transport simulation, based on a \emph{proof-of-concept} two-terminal nanodevice, to demonstrate all-electric-controlled valving effects uniquely enabled by the nonvolatile ferroelectric switching of the heterostructure. These findings unravels the potential of FeCl$_2$/Sc$_2$CO$_2$ vdW heterostructures as a building block for designing a next generation of ultimately compact information processing, data storage and spintronics devices. △ Less

Submitted 29 March, 2022; originally announced March 2022.

Comments: 9 pages, 5 figures, accepted for publication in Physical Review B (2022)

Liquid-metal/NdFeB/Sillicone Composite Elastomer with Reprogrammable Magnetization and Modulus

Authors: Ran Zhao, Guopeng Zhou, Hanchen Yao, Houde Dai

Abstract: Magnetic programming soft machines has great development prospects in the fields of minimally invasive medicine, wearable device and soft robot. However, unrepeatable magnetization and low modulus limits their applications. So far, there are few techniques that can make magnetic soft robots have adjustable functions, mechanical and electrical properties. This paper presented a magnetic functional… ▽ More Magnetic programming soft machines has great development prospects in the fields of minimally invasive medicine, wearable device and soft robot. However, unrepeatable magnetization and low modulus limits their applications. So far, there are few techniques that can make magnetic soft robots have adjustable functions, mechanical and electrical properties. This paper presented a magnetic functional elastomer based on liquid metal-NdFeB-Silicone composite materials. This magnetoelastomer uses the phase transition characteristics of liquid-metal and magnetic guided rotation of micro ferromagnetic particles to realize reprogrammable magnetization and modulus. The elastomer's fabrication method was given and the basic programmable properties were tested. Some robot prototypes have also been manufactured to show how to respond to different mission requirements by programming magnetization and modulus. Our research provides a new path for the design and large-scale manufacturing of magnetic soft robot. △ Less

Submitted 28 November, 2021; originally announced November 2021.

Comments: 9 pages, 5 figures

Valley-dependent transport in strain engineering graphene heterojunctions

Authors: Fei Wan, Xinru Wang, Liehong Liao, Jiayan Zhang, M. N. Chen, G. H. Zhou, Z. B. Siu, Mansoor B. A. Jalil, Yuan Li

Abstract: We study the effect of the strain on the band structure and the valley-dependent transport property of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing the strain and on-site energies. In the presence of the strain, the values of the transmission can be effectively adjusted by changing the strengths of the strain, while the transport… ▽ More We study the effect of the strain on the band structure and the valley-dependent transport property of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing the strain and on-site energies. In the presence of the strain, the values of the transmission can be effectively adjusted by changing the strengths of the strain, while the transport angle basically keeps unchanged. When an extra on-site energy is simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the transport angles of two valleys can be significantly changed. Therefore, one can realize an effective modulation of valley-dependent transport by changing the strength and stretch angle of the strain and on-site energies, which can be exploited for graphene-based valleytronics devices. △ Less

Submitted 1 October, 2021; originally announced October 2021.

Comments: 7 pages, 10 figures

Journal ref: Chin. Phys. B 31, 077302 (2022)

Improved Gate Reliability of p-GaN Gate HEMTs by Gate Do** Engineering

Authors: Guangnan Zhou, Fanming Zeng, Rongyu Gao, Qing Wang, Kai Cheng, Guangrui Xia, Hongyu Yu

Abstract: We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by do** engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally doped GaN layer, the gate leakage current is suppressed and the gate breakdown voltage is boosted from 10.6 to 14.6 V with negligible influence on the threshold… ▽ More We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by do** engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally doped GaN layer, the gate leakage current is suppressed and the gate breakdown voltage is boosted from 10.6 to 14.6 V with negligible influence on the threshold voltage and on-resistance. Time-dependent gate breakdown measurements reveal that the maximum gate drive voltage increases from 6.2 to 10.6 V for a 10-year lifetime with a 1% gate failure rate. This method effectively expands the operating voltage margin of the p-GaN gate HEMTs without any other additional process steps. △ Less

Submitted 2 June, 2021; originally announced June 2021.

Power law decay of local density of states oscillations near a line defect in a system with semi-Dirac points

Authors: Wang Chen, Xianzhe Zhu, Xiaoying Zhou, Guanghui Zhou

Abstract: We theoretically study the power-law decay behavior of the local density of states (LDOS) oscillations near a line defect in system with semi-Dirac points by using a low-energy k.p Hamiltonian. We find that the LDOS oscillations are strongly anisotropic and sensitively depend on the orientation of the line defect. We analytically obtain the decay indexes of the LDOS oscillations near a line defect… ▽ More We theoretically study the power-law decay behavior of the local density of states (LDOS) oscillations near a line defect in system with semi-Dirac points by using a low-energy k.p Hamiltonian. We find that the LDOS oscillations are strongly anisotropic and sensitively depend on the orientation of the line defect. We analytically obtain the decay indexes of the LDOS oscillations near a line defect running along different directions by using the stationary phase approximation. Specifically, when the line defect is perpendicular to the linear dispersion direction, the decay index is -5/4 whereas it becomes -1/4 if the system is gapped, both of which are different from the decay index -3/2 in isotropic Dirac systems. In contrast, when the line defect is perpendicular to the parabolic dispersion direction, the decay index is always -1/2 regardless of whether the system is gapped or not, which is the same as that in a conventional semimetal. In general, when the defect runs along an arbitrary direction, the decay index sensitively depends on the incident energy for a certain orientation of the line defect. It varies from -5/4 to -1/2 due to the absence of strict stationary phase point. Our results indicate that the decay index -5/4 provides a fingerprint to identify semi-Dirac points in 2D electron systems. △ Less

Submitted 31 March, 2021; originally announced March 2021.

Comments: Published version: 9 Pages, 6 Figures

Journal ref: Phys. Rev. B 103, 125429 (2021)

Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs

Authors: Guangnan Zhou, Yang Jiang, Gaiying Yang, Qing Wang, Mengya Fan, Lingli Jiang, Hongyu Yu, Guangrui Xia

Abstract: We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing condition window (600 - 700 oC, 1 - 4 min). Results from similar common-anode Schottky junctions made of Au/p-GaN, Al/Ti/p-GaN and Au/Ti/graphene/p-GaN junctions demonstrated that all the three layers (Au, Ti and p-GaN)… ▽ More We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing condition window (600 - 700 oC, 1 - 4 min). Results from similar common-anode Schottky junctions made of Au/p-GaN, Al/Ti/p-GaN and Au/Ti/graphene/p-GaN junctions demonstrated that all the three layers (Au, Ti and p-GaN) are essential for the increased resistance. Raman characterization of the p-GaN showed a decrease of the Mg-N bonding, i.e., the deactivation of Mg, which is consistent with the Hall measurement results. Moreover, this high-resistance junction structure was employed in p-GaN gate AlGaN/GaN HEMTs. It was shown to be an effective gate technology that was capable to boost the gate breakdown voltage from 9.9 V to 13.8 V with a negligible effect on the threshold voltage or the sub-threshold slope. △ Less

Submitted 5 February, 2021; originally announced February 2021.

Edge and sublayer degrees of freedom for phosphorene nanoribbons with twofold-degenerate edge bands via electric field

Authors: Yi Ren, Xiaoying Zhou, Guanghui Zhou

Abstract: For the pristine phosphorene nanoribbons (PNRs) with edge states, there exist two categories of edge bands near the Fermi energy (EF), i.e., the shuttle-shaped twofold-degenerate and the near-flat simple degenerate edge bands. However, the usual experimental measurement may not distinguish the difference between the two categories of edge bands. Here we study the varying rule for the edge bands of… ▽ More For the pristine phosphorene nanoribbons (PNRs) with edge states, there exist two categories of edge bands near the Fermi energy (EF), i.e., the shuttle-shaped twofold-degenerate and the near-flat simple degenerate edge bands. However, the usual experimental measurement may not distinguish the difference between the two categories of edge bands. Here we study the varying rule for the edge bands of PNRs under an external electrostatic field. By using the KWANT code based on the tight-binding approach, we find that the twofold-degenerate edge bands can be divided into two separated shuttles until the degeneracy is completely removed and a gap near EFis opened under a sufficiently strong in-plane electric field. Importantly, each shuttle from the ribbon upper or lower edge outmost atoms is identified according to the local density of states. However, under a small off-plane field the shuttle-shaped bands are easily induced into two near-flat bands contributed from the edge atoms of the top and bottom sublayers, respectively. The evidence provides the edge and sublayer degrees of freedom (DOF) for the PNRs with shuttle-shaped edge bands, of which is obviously different from another category PNRs intrinsically with near-flat edge bands. This is because that the former category of ribbons solely have four zigzag-like atomic configurations at the edges in each unit cell, which also results in that the property is robust against the point defect in the ribbon center area. As an application, furthermore, based on this issue we propose a homogenous junction of a shuttle-edge-band PNR attached by two electric gates. Interestingly, the transport property of the junction with field manipulation well reflects the characteristics of the two DOFs. These findings may provide a further understanding on PNRs and initiate new developments in PNR-based electronics. △ Less

Submitted 11 January, 2021; originally announced January 2021.

Journal ref: Phys.Rev.B.103.045405(2021)

Two-dimensional van der Waals electrical contact to monolayer MoSi$_2$N$_4$

Authors: Liemao Cao, Guanghui Zhou, Qianqian Wang, L. K. Ang, Yee Sin Ang

Abstract: Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material properties of MoSi$_2$N$_4$, the physics of electrical contacts to MoSi$_2$N$_4$ remains largely unexplored thus far. In this work, we study the van der Waals heterostr… ▽ More Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material properties of MoSi$_2$N$_4$, the physics of electrical contacts to MoSi$_2$N$_4$ remains largely unexplored thus far. In this work, we study the van der Waals heterostructures composed of MoSi$_2$N$_4$ contacted by graphene and NbS$_2$ monolayers using first-principle density functional theory calculations. We show that the MoSi$_2$N$_4$/NbS$_2$ contact exhibits an ultralow Schottky barrier height (SBH), which is beneficial for nanoelectronics applications. For MoSi$_2$N$_4$/graphene contact, the SBH can be modulated via interlayer distance or via external electric fields, thus opening up an opportunity for reconfigurable and tunable nanoelectronic devices. Our findings provide insights on the physics of 2D electrical contact to MoSi$_2$N$_4$, and shall offer a critical first step towards the design of high-performance electrical contacts to MoSi$_2$N$_4$-based 2D nanodevices. △ Less

Submitted 16 December, 2020; v1 submitted 12 October, 2020; originally announced October 2020.

Comments: 5 pages, 5 figures (accepted version, to appear in Applied Physics Letters)

Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-gate-sweep Measurements

Authors: Guangnan Zhou, Fanming Zeng, Yang Jiang, Qing Wang, Lingli Jiang, Guangrui, Xia, Hongyu Yu

Abstract: In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mechanisms were observed and identified separately in the same devices: the metal/p-GaN junction breakdown, the p-GaN/AlGaN/GaN junction breakdown, and the passivation related breakdown. This method is an effective method to… ▽ More In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mechanisms were observed and identified separately in the same devices: the metal/p-GaN junction breakdown, the p-GaN/AlGaN/GaN junction breakdown, and the passivation related breakdown. This method is an effective method to determine the breakdown mechanisms. The different BD mechanisms were further confirmed by scanning electron microscopy (SEM). Finally, the temperature dependences of the three BD mechanisms were measured and compared. This analysis method was also employed in the devices with a different passivation material and showed its applicability. △ Less

Submitted 30 September, 2020; originally announced September 2020.

Integrated Cooling (i-Cool) Textile of Heat Conduction and Sweat Transportation for Personal Perspiration Management

Authors: Yucan Peng, Wei Li, Bofei Liu, Joseph Schaadt, **g Tang, Guangmin Zhou, Weiliang **, Yangying Zhu, Guanyang Wang, Wenxiao Huang, Chi Zhang, Tong Wu, Chris Dames, Ravi Prasher, Shanhui Fan, Yi Cui

Abstract: Perspiration evaporation plays an indispensable role in human body heat dissipation. However, conventional textiles show limited perspiration management capability in moderate/profuse perspiration scenarios, i.e. low evaporation ability, ineffective evaporative cooling effect, and resultant human body dehydration and electrolyte disorder. Here, we propose a novel concept of integrated cooling (i-C… ▽ More Perspiration evaporation plays an indispensable role in human body heat dissipation. However, conventional textiles show limited perspiration management capability in moderate/profuse perspiration scenarios, i.e. low evaporation ability, ineffective evaporative cooling effect, and resultant human body dehydration and electrolyte disorder. Here, we propose a novel concept of integrated cooling (i-Cool) textile of heat conduction and sweat transportation for personal perspiration management based on unique functional structure design. By integrating heat conductive pathways and water transport channels decently, this textile not only shows the capability of liquid water wicking, but also exhibits superior evaporation rate than traditional textiles. Furthermore, compared with cotton, about 2.8 $^\circ$C cooling effect causing less than one third amount of dehydration has also been demonstrated on the artificial sweating skin platform with feedback control loop simulating human body perspiration situation. Moreover, the practical application feasibility of the i-Cool textile design principles has been validated as well. Owing to its exceptional personal perspiration management performance in liquid water wicking, fast evaporation, efficient cooling effect and reduced human body dehydration/electrolyte loss, we expect this i-Cool textile provides promising design guidelines for next-generation personal perspiration management textile. △ Less

Submitted 13 September, 2020; originally announced September 2020.

Comments: 75 pages, 30 figures

Electric-field-driven Non-volatile Multi-state Switching of Individual Skyrmions in a Multiferroic Heterostructure

Authors: Yadong Wang, Lei Wang, **g Xia, Zhengxun Lai, Guo Tian, Xichao Zhang, Zhipeng Hou, Xingsen Gao, Wenbo Mi, Chun Feng, Min Zeng, Guofu Zhou, Guanghua Yu, Guangheng Wu, Yan Zhou, Wenhong Wang, Xi-xiang Zhang, Junming Liu

Abstract: Electrical manipulation of skyrmions attracts considerable attention for its rich physics and promising applications. To date, such a manipulation is realized mainly via spin-polarized current based on spin-transfer torque or spin-orbital torque effect. However, this scheme is energy-consuming and may produce massive Joule heating. To reduce energy dissipation and risk of heightened temperatures o… ▽ More Electrical manipulation of skyrmions attracts considerable attention for its rich physics and promising applications. To date, such a manipulation is realized mainly via spin-polarized current based on spin-transfer torque or spin-orbital torque effect. However, this scheme is energy-consuming and may produce massive Joule heating. To reduce energy dissipation and risk of heightened temperatures of skyrmion-based devices, an effective solution is to use electric field instead of current as stimulus. Here, we realize an electric-field manipulation of skyrmions in a nanostructured ferromagnetic/ferroelectrical heterostructure at room temperature via an inverse magneto-mechanical effect. Intriguingly, such a manipulation is non-volatile and exhibits a multi-state feature. Numerical simulations indicate that the electric-field manipulation of skyrmions originates from strain-mediated modification of effective magnetic anisotropy and Dzyaloshinskii-Moriya interaction. Our results open a direction for constructing low-energy-dissipation, non-volatile, and multi-state skyrmion-based spintronic devices. △ Less

Submitted 21 July, 2020; originally announced July 2020.

Comments: Accepted by Nature Communications 11, 3577 (2020)

Journal ref: Nature Communications 11, 3577 (2020)

Electrical Contact between an Ultrathin Topological Dirac Semimetal and a Two-Dimensional Material

Authors: Liemao Cao, Guanghui Zhou, Qingyun Wu, Shengyuan A. Yang, Hui Ying Yang, Yee Sin Ang, L. K. Ang

Abstract: Ultrathin films of topological Dirac semimetal, Na$_3$Bi, has recently been revealed as an unusual electronic materials with field-tunable topological phases. Here we investigate the electronic and transport properties of ultrathin Na$_3$Bi as an electrical contact to two-dimensional (2D) metal, i.e. graphene, and 2D semiconductor, i.e. MoS$_2$ and WS$_2$ monolayers. Using combined first-principle… ▽ More Ultrathin films of topological Dirac semimetal, Na$_3$Bi, has recently been revealed as an unusual electronic materials with field-tunable topological phases. Here we investigate the electronic and transport properties of ultrathin Na$_3$Bi as an electrical contact to two-dimensional (2D) metal, i.e. graphene, and 2D semiconductor, i.e. MoS$_2$ and WS$_2$ monolayers. Using combined first-principle density functional theory and nonequilibrium Green's function simulation, we show that the electrical coupling between Na$_3$Bi bilayer thin film and graphene results in a notable interlayer charge transfer, thus inducing sizable $n$-type do** in the Na$_3$Bi/graphene heterostructures. In the case of MoS$_2$ and WS$_2$ monolayers, the lateral Schottky transport barrier is significantly lower than many commonly studied bulk metals, thus unraveling Na$_3$Bi bilayer as a high-efficiency electrical contact material for 2D semiconductors. These findings opens up an avenue of utilizing topological semimetal thin film as electrical contact to 2D materials, and further expands the family of 2D heterostructure devices into the realm of topological materials. △ Less

Submitted 13 May, 2020; v1 submitted 21 April, 2020; originally announced April 2020.

Comments: 8 pages, 6 figures. Authors' accepted version

Journal ref: Phys. Rev. Appl. 13, 054030 (2020)

Crystallographic Characterization of Black Phosphorene and Its Application in Nanostructures

Authors: Yi Ren, Pu Liu, Benliang Zhou, Xiaoying Zhou, Guanghui Zhou

Abstract: The central question in the field of 2D materials is how a material behaves when it is patterned at nanometer scale with different edge geometries. Due to the anisotropy inherent in the puckered structure, black phosphorene nanostructures may have more varieties of edge geometries. Here, we present a comprehensive 2D planar crystallographic characterization of phosphorene uniformly by a chiral vec… ▽ More The central question in the field of 2D materials is how a material behaves when it is patterned at nanometer scale with different edge geometries. Due to the anisotropy inherent in the puckered structure, black phosphorene nanostructures may have more varieties of edge geometries. Here, we present a comprehensive 2D planar crystallographic characterization of phosphorene uniformly by a chiral vector (angle), from which a new type of edge atomic configuration, the slope edge geometry is discovered. The phosphorene nanoribbons (PNRs) with slope edges, like previously noticed zigzag and skewed-armchair PNRs, also own interesting twofold-degenerate edge states. These three marginal directions, together with the skewed-zigzag and armchair directions without edge states, divide a phosphorene into four regions among which the electronic property is different from each other. Further, for a PNR cutting along any possible direction, by taking into account the z-direction in structure, whether or not it owns edge states depends on the periodic zigzag-like morphology along the edges. Moreover, we propose a PNR-based z-shaped homogenous junction with scale $\sim$100 nm, where the central scattering region between two PNR electrodes is a phosphorene quantum dot (PQD) of PNR segment with various edge morphologies. Interestingly, the calculated conductance of the junction relies sensitively on the central PQD edge states, which exhibits a terrace with resonant oscillations near Fermi energy, otherwise the electron transport is blocked due to the absence of edge states. Remarkably, the number of oscillating peaks exactly matches to the number of sawtooth along an edge of PQD, since the discrete energy levels of the zigzag-like edge provide the transporting channels for electrons. The results here may be extended to the group-VA 2D materials for observing the electronic property of nanostructures. △ Less

Submitted 12 December, 2019; originally announced December 2019.

Journal ref: Physical Review Applied 12.064025 (2019)

Machine Learned Hückel Theory: Interfacing Physics and Deep Neural Networks

Authors: Tetiana Zubatyuk, Ben Nebgen, Nicholas Lubbers, Justin S. Smith, Roman Zubatyuk, Guoqing Zhou, Christopher Koh, Kipton Barros, Olexandr Isayev, Sergei Tretiak

Abstract: The Hückel Hamiltonian is an incredibly simple tight-binding model famed for its ability to capture qualitative physics phenomena arising from electron interactions in molecules and materials. Part of its simplicity arises from using only two types of empirically fit physics-motivated parameters: the first describes the orbital energies on each atom and the second describes electronic interactions… ▽ More The Hückel Hamiltonian is an incredibly simple tight-binding model famed for its ability to capture qualitative physics phenomena arising from electron interactions in molecules and materials. Part of its simplicity arises from using only two types of empirically fit physics-motivated parameters: the first describes the orbital energies on each atom and the second describes electronic interactions and bonding between atoms. By replacing these traditionally static parameters with dynamically predicted values, we vastly increase the accuracy of the extended Hückel model. The dynamic values are generated with a deep neural network, which is trained to reproduce orbital energies and densities derived from density functional theory. The resulting model retains interpretability while the deep neural network parameterization is smooth, accurate, and reproduces insightful features of the original static parameterization. Finally, we demonstrate that the Hückel model, and not the deep neural network, is responsible for capturing intricate orbital interactions in two molecular case studies. Overall, this work shows the promise of utilizing machine learning to formulate simple, accurate, and dynamically parameterized physics models. △ Less

Submitted 27 September, 2019; originally announced September 2019.

Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates

Authors: Guangnan Zhou, Zeyu Wan, Gaiying Yang, Yang Jiang, Robert Sokolovskij, Hongyu Yu, Guangrui, Xia

Abstract: In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/ SiNx on the two sides. Compared to the Au/Ti/p-GaN HEMTs without graphene, the insertion of graphene can increase the ION/IOFF ratios by a factor of 50, increase… ▽ More In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/ SiNx on the two sides. Compared to the Au/Ti/p-GaN HEMTs without graphene, the insertion of graphene can increase the ION/IOFF ratios by a factor of 50, increase the VTH by 0.30 V and reduce the off-state gate leakage by 50 times. Additionally, this novel gate structure has better thermal stability. After thermal annealing at 350 °C, gate breakdown voltage holds at 12.1 V, which is first reported for Schottky gate p-GaN HEMTs. This is considered to be a result of the 0.24 eV increase in Schottky barrier height and the better quality of the Ti/graphene/p-GaN and Ti/graphene/SiNx interfaces. This approach is very effective in improving the Ion/Iff ratio and gate BV of normally-OFF GaN HEMTs. △ Less

Submitted 22 October, 2019; v1 submitted 31 July, 2019; originally announced August 2019.

Strain engineering of epitaxial oxide heterostructures beyond substrate limitations

Authors: Xiong Deng, Chao Chen, Deyang Chen, Xiangbin Cai, Xiaozhe Yin, Chao Xu, Fei Sun, Caiwen Li, Yan Li, Han Xu, Mao Ye, Guo Tian, Zhen Fan, Zhipeng Hou, Minghui Qin, Yu Chen, Zhenlin Luo, Xubing Lu, Guofu Zhou, Lang Chen, Ning Wang, Ye Zhu, Xingsen Gao, Jun-Ming Liu

Abstract: The limitation of commercially available single-crystal substrates and the lack of continuous strain tunability preclude the ability to take full advantage of strain engineering for further exploring novel properties and exhaustively studying fundamental physics in complex oxides. Here we report an approach for imposing continuously tunable, large epitaxial strain in oxide heterostructures beyond… ▽ More The limitation of commercially available single-crystal substrates and the lack of continuous strain tunability preclude the ability to take full advantage of strain engineering for further exploring novel properties and exhaustively studying fundamental physics in complex oxides. Here we report an approach for imposing continuously tunable, large epitaxial strain in oxide heterostructures beyond substrate limitations by inserting an interface layer through tailoring its gradual strain relaxation. Taking BiFeO3 as a model system, we demonstrate that the introduction of an ultrathin interface layer allows the creation of a desired strain that can induce phase transition and stabilize a new metastable super-tetragonal phase as well as morphotropic phase boundaries overcoming substrate limitations. Furthermore, continuously tunable strain from tension to compression can be generated by precisely adjusting the thickness of the interface layer, leading to the first achievement of continuous O-R-T phase transition in BiFeO3 on a single substrate. This proposed route could be extended to other oxide heterostructures, providing a platform for creating exotic phases and emergent phenomena. △ Less

Submitted 28 January, 2021; v1 submitted 3 May, 2019; originally announced May 2019.

Insulating Parent Phase and Distinct Do** Evolution to Superconductivity in Single-Layer FeSe/SrTiO3 Films

Authors: Yong Hu, Yu Xu, Yi-Min Zhang, Qing-Yan Wang, Shao-Long He, De-Fa Liu, Ai-Ji Liang, Jian-Wei Huang, Cong Li, Yong-Qing Cai, Ding-Song Wu, Guo-Dong Liu, Fang-Sen, Jia-Qi Fan, Guan-Yu Zhou, Lili Wang, Can-Li Song, Xu-Cun Ma, Qi-Kun Xue, Zu-Yan Xu, Lin Zhao, X. J. Zhou

Abstract: The single-layer FeSe/SrTiO3 (FeSe/STO) films have attracted much attention because of their simple crystal structure, distinct electronic structure and record high superconducting transition temperature (Tc). The origin of the dramatic Tc enhancement in single-layer FeSe/STO films and the dichotomy of superconductivity between single-layer and multiple-layer FeSe/STO films are still under debate.… ▽ More The single-layer FeSe/SrTiO3 (FeSe/STO) films have attracted much attention because of their simple crystal structure, distinct electronic structure and record high superconducting transition temperature (Tc). The origin of the dramatic Tc enhancement in single-layer FeSe/STO films and the dichotomy of superconductivity between single-layer and multiple-layer FeSe/STO films are still under debate. Here we report a comprehensive high resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy measurements on the electronic structure evolution with do** in single-layer and multiple-layer FeSe/STO films. We find that the single-layer FeSe/STO films have a distinct parent phase and a route of do** evolution to superconductivity that are fundamentally different from multiple-layer FeSe/STO films. The parent phase of the single-layer FeSe/STO films is insulating, and its do** evolution is very similar to that of do** a Mott insulator in cuprate superconductors. In multiple-layer FeSe/STO films, high-Tc superconductivity occurs by suppressing the nematic order in the parent compound with electron do**. The single-layer FeSe/STO films represent the first clear case in the iron-based superconductors that the parent compound is an insulator. Our observations of the unique parent state and do** evolution in the single-layer FeSe/STO films provide key insight in understanding its record high-Tc superconductivity. They also provide a new route of realizing superconductivity in iron-based superconductors that is common in high temperature cuprate superconductors. △ Less

Submitted 9 April, 2019; originally announced April 2019.

Report number: Phys. Rev. B 102, 115144 (2020)

Journal ref: Phys. Rev. B 102, 115144 (2020)

Even-odd dependent optical transitions of zigzag monolayer black phosphorus nanoribbons

Authors: Pu Liu, Xianzhe Zhu, Xiaoying Zhou, Benliang Zhou, Wenhu Liao, Guanghui Zhou, Kai Chang

Abstract: We analytically study the electronic structures and optical properties of zigzag-edged black phosphorene nanoribbons (ZPNRs) utilizing the tight-binding (TB) Hamiltonian and Kubo formula. By solving the discrete Schordinger equation directly, we obtain the energy spectra and wavefunctions for a $N$-ZPNR with $N$ number of transverse zigzag atomic chains, and classify the eigenstates according to t… ▽ More We analytically study the electronic structures and optical properties of zigzag-edged black phosphorene nanoribbons (ZPNRs) utilizing the tight-binding (TB) Hamiltonian and Kubo formula. By solving the discrete Schordinger equation directly, we obtain the energy spectra and wavefunctions for a $N$-ZPNR with $N$ number of transverse zigzag atomic chains, and classify the eigenstates according to the lattice symmetry. We then obtain the optical transition selection rule of ZPNRs based on the symmetry analysis and the analytical expressions of the optical transition matrix elements. Under an incident light linearly-polarized along the ribbon, importantly, we find that the optical transition selection rule for the $N$-ZPNR with even- or odd-$N$ is qualitatively different. In specification, for even-$N$ ZPNRs the inter- (intra-) band selection rule is $Δn=$odd (even), since the parity of the wavefunction corresponding to the $n$th subband in the conduction (valence) band is $(-1)^{n}[(-1)^{(n+1)}]$ due to the presence of the $C_{2x}$ symmetry. In contrast, all optical transitions are possible among all subbands due to the absence of the $C_{2x}$ symmetry. Our findings provide a further understanding on the electronic states and optical properties of ZPNRs, which are useful in the explanation of the optical experiment data on ZPNR samples. △ Less

Submitted 10 March, 2019; originally announced March 2019.

Comments: 13 pages, 9 figures

Improved Thin Film Quality and Photoluminescence of N-Doped Epitaxial Germanium-on-Silicon using MOCVD

Authors: Guangnan Zhou, Alejandra V. Cuervo Covian, Kwang Hong Lee, Chuan Seng Tan, Jifeng Liu, Guangrui, Xia

Abstract: Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation desnity, Si-Ge interdiffusion, dopant diffusion, and photoluminescence were characterized to study the impacts of defect annealing and Si substrate offcut effects on the Ge film quality and most importantly, the light e… ▽ More Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation desnity, Si-Ge interdiffusion, dopant diffusion, and photoluminescence were characterized to study the impacts of defect annealing and Si substrate offcut effects on the Ge film quality and most importantly, the light emission properties. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films have a small tensile strain of 0.2%. As-grown P and As-doped Ge films have threading dislocaiton densities from 2.8e8 to 1.1e9 cm^(-2) without defect annealing. With thermal cycling, these values reduced to 1-1.5e8 cm^(-2). The six degree offcut of the Si substrate was shown to have little impact. In contrast to delta do**, the out-diffusion of dopants has been successfully suppressed to retain the do** concentration upon defect annealing. However, the photoluminescence intensity decreases mostly due to Si-Ge interdiffusion, which also causes a blue-shift in the emission wavelength. Compared to a benckmarking sample from the first Ge laser work doped by delta do** method in 2012, the as-grown P or As-doped Ge films have similar photoluminescence intensity at a 25% do** concentration and smoother surface, which are promising for Ge lasers with better light emission efficiencies. △ Less

Submitted 25 February, 2019; v1 submitted 29 January, 2019; originally announced January 2019.

Comments: arXiv admin note: text overlap with arXiv:1712.05468

Controllable Defect Driven Symmetry Change and Domain Structure Evolution in BiFeO3 with Enhanced Tetragonality

Authors: Chao Chen, Changan Wang, Xiangbin Cai, Chao Xu, Caiwen Li, **gtian Zhou, Zhenlin Luo, Zhen Fan, Minghui Qin, Min Zeng, Xubing Lu, ** Yang, Guofu Zhou, Xingsen Gao, Ning Wang, Ye Zhu, Shengqiang Zhou, Deyang Chen, Jun-Ming Liu

Abstract: Defect engineering has been a powerful tool to enable the creation of exotic phases and the discovery of intriguing phenomena in ferroelectric oxides. However, accurate control the concentration of defects remains a big challenge. In this work, ion implantation, that can provide controllable point defects, allows us the ability to produce a controlled defect-driven true super-tetragonal (T) phase… ▽ More Defect engineering has been a powerful tool to enable the creation of exotic phases and the discovery of intriguing phenomena in ferroelectric oxides. However, accurate control the concentration of defects remains a big challenge. In this work, ion implantation, that can provide controllable point defects, allows us the ability to produce a controlled defect-driven true super-tetragonal (T) phase with enhanced tetragonality in ferroelectric BiFeO3 thin films. This point defect engineering is found to drive the phase transition from the as-grown mixed rhombohedral-like (R) and tetragonal-like (MC) phase to true tetragonal (T) symmetry. By further increasing the injected dose of He ion, we demonstrate an enhanced tetragonality super-tetragonal (super-T) phase with the largest c/a ratio (~ 1.3) that has ever been experimentally achieved in BiFeO3. A combination of morphology change and domain evolution further confirm that the mixed R/MC phase structure transforms to the single-domain-state true tetragonal phase. Moreover, the re-emergence of R phase and in-plane stripe nanodomains after heat treatment reveal the memory effect and reversible phase transition. Our findings demonstrate the control of R-Mc-T-super T symmetry changes and the creation of true T phase BiFeO3 with enhanced tetragonality through controllable defect engineering. This work also provides a pathway to generate large tetragonality (or c/a ratio) that could be extended to other ferroelectric material systems (such as PbTiO3, BaTiO3 and HfO2) which may lead to strong polarization enhancement. △ Less

Submitted 5 April, 2019; v1 submitted 28 January, 2019; originally announced January 2019.

Journal ref: Nanoscale,2019

Superconductivity above 28 K in single unit cell FeSe films interfaced with GaO$_{2-δ}$ layer on NdGaO$_{3}$(110)

Authors: Haohao Yang, Guanyu Zhou, Yuying Zhu, Guan-Ming Gong, Qinghua Zhang, Menghan Liao, Zheng Li, Cui Ding, Fanqi Meng, Mohsin Rafique, Heng Wang, Lin Gu, Ding Zhang, Lili Wang, Qi-Kun Xue

Abstract: We prepared single unit cell FeSe films on GaO$_{2-δ}$ terminated perovskite NdGaO$_{3}$(110) substrates and performed ex situ transport and scanning transmission electron microscopy measurements on the FeTe protected films. Our experimental measurements showed that the single unit cell FeSe films interfaced with GaO$_{2-δ}$ layer are electron doped via interface charge transfer. Most importantly,… ▽ More We prepared single unit cell FeSe films on GaO$_{2-δ}$ terminated perovskite NdGaO$_{3}$(110) substrates and performed ex situ transport and scanning transmission electron microscopy measurements on the FeTe protected films. Our experimental measurements showed that the single unit cell FeSe films interfaced with GaO$_{2-δ}$ layer are electron doped via interface charge transfer. Most importantly, this type of heterostructure can host interface enhanced superconductivity with an onset temperature of about 28 K, which is much higher than the value of 8 K in bulk FeSe. Our work indicates that FeSe/GaO$_{2-δ}$can be a comparative platform with the FeSe/TiO$_{2-δ}$ family for understanding the mechanism of interface enhanced high temperature superconductivity. △ Less

Submitted 12 March, 2019; v1 submitted 18 January, 2019; originally announced January 2019.

Widely distributed clusters of the constraint satisfaction problem model d-k-CSP

Authors: Wei Xu, Fuzhou Gong, Guangyan Zhou

Abstract: Relation between problem hardness and solution space structure is an important research aspect. Model d-k-CSP generates very hard instances when $r=1$ and $r$ is near 1, where $r$ represents normalized constraint density. We find that when $r$ is below and close to 1, the solution space contains many widely distributed well-separated small cluster-regions (a cluster-region is a union of some clust… ▽ More Relation between problem hardness and solution space structure is an important research aspect. Model d-k-CSP generates very hard instances when $r=1$ and $r$ is near 1, where $r$ represents normalized constraint density. We find that when $r$ is below and close to 1, the solution space contains many widely distributed well-separated small cluster-regions (a cluster-region is a union of some clusters), which should the reason that the generated instances are hard to solve. △ Less

Submitted 8 April, 2019; v1 submitted 18 December, 2018; originally announced December 2018.

Electron mass enhancement and magnetic phase separation near the Mott transition in double layer ruthenates

Authors: ** Peng, X. M. Gu, G. T. Zhou, W. Wang, J. Y. Liu, Yu Wang, Z. Q. Mao, X. S. Wu, Shuai Dong

Abstract: We present a detailed investigation of the specific heat in Ca$_3$(Ru$_{1-x}M_x$)$_2$O$_7$ ($M$ = Ti, Fe, Mn) single crystals. With different dopants and do** levels, three distinct regions are present, including a quasi-2D metallic state with an antiferromagnetic (AFM) order formed by ferromagnetic bilayers (AFM-$b$), a Mott insulating state with G-type AFM order (G-AFM) and a localized state w… ▽ More We present a detailed investigation of the specific heat in Ca$_3$(Ru$_{1-x}M_x$)$_2$O$_7$ ($M$ = Ti, Fe, Mn) single crystals. With different dopants and do** levels, three distinct regions are present, including a quasi-2D metallic state with an antiferromagnetic (AFM) order formed by ferromagnetic bilayers (AFM-$b$), a Mott insulating state with G-type AFM order (G-AFM) and a localized state with a mixed AFM-b and G-AFM phase. Our specific heat data provide deep insights into the Mott transitions induced by Ti and Mn do**s. We observed not only an anomalous large mass enhancement but also an additional term in the specific heat i.e. $C\propto T^2$ in the localized region. The $C\propto T^2$ term is most likely due to the long-wavelength excitations with both FM and AFM components. A decrease of Debye temperature is observed in the G-type AFM region, indicating a lattice softening associated with the Mott transition. △ Less

Submitted 1 October, 2018; v1 submitted 4 July, 2018; originally announced July 2018.

Comments: 10 pages, 4 figures

Journal ref: Frontiers of Physics 13, 137105 (2018)

Gate controlled quantum interference: direct observation of anti-resonances in single molecule charge transport

Authors: Yueqi Li, Marius Buerkle, Guangfeng Li, Ali Rostamian, Hui Wang, Zixiao Wang, David R. Bowler, Tsuyoshi Miyazaki, Yoshihiro Asai, Gang Zhou, Nongjian Tao

Abstract: Quantum interference can profoundly affect charge transport in single molecules, but experiments can usually measure only the conductance at the Fermi energy. Because in general the most pronounced features of the quantum interference are not located at the Fermi energy, it is highly desirable to probe charge transport in a broader energy range. Here by the method of electrochemical gating, we mea… ▽ More Quantum interference can profoundly affect charge transport in single molecules, but experiments can usually measure only the conductance at the Fermi energy. Because in general the most pronounced features of the quantum interference are not located at the Fermi energy, it is highly desirable to probe charge transport in a broader energy range. Here by the method of electrochemical gating, we measure the conductance and map the transmission functions of single molecules at and around the Fermi energy, and study signatures associated with constructive and destructive interference. With the electrochemical gate control, we tune the quantum interference between the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO), and directly observe anti-resonance, a distinct feature of destructive interference. By tuning the molecule in and out of anti-resonance, we achieve continuous control of the conductance over 2 orders of magnitude with a subthreshold swing of ~17 mV/dec, features relevant to high-speed and low-power electronics. △ Less

Submitted 20 February, 2019; v1 submitted 31 May, 2018; originally announced June 2018.

Random attractor for the 2D stochastic nematic liquid crystals flows with multiplicative noise

Authors: Guoli Zhou

Abstract: Under non-periodic boundary conditions, we consider the long-time behavior for stochastic 2D nematic liquid crystals flows with velocity and orientations perturbed by additive noise and multiplicative noise respectively. It is the first result for the long-time behavior of stochastic nematic liquid crystals under Dirichlet boundary condition for velocity field and Neumann boundary condition for or… ▽ More Under non-periodic boundary conditions, we consider the long-time behavior for stochastic 2D nematic liquid crystals flows with velocity and orientations perturbed by additive noise and multiplicative noise respectively. It is the first result for the long-time behavior of stochastic nematic liquid crystals under Dirichlet boundary condition for velocity field and Neumann boundary condition for orientation field. △ Less

Submitted 27 March, 2018; originally announced March 2018.

Comments: arXiv admin note: text overlap with arXiv:cond-mat/0211455 by other authors

Calculations of point defects in the layered MX2 (M=Mo, W; X=S, Te): Substitution by the groups III, V and VII elements

Authors: Dan Guo, Kaike Yang, Tao Shen, ** Xiao, Li-Ming Tang, Zhongming Wei, Guanghui Zhou, Hui-Xiong Deng

Abstract: Dopability in semiconductors plays a crucial role in device performance. Using the first-principles density-functional theory calculations, we investigate systematically the do** properties of layered MX2 (M= Mo, W; X=S, Te) by replacing M or X with the groups III, V and VII elements. It is found that the defect BM is hard to form in MX2 due to the large formation energy originating from the cry… ▽ More Dopability in semiconductors plays a crucial role in device performance. Using the first-principles density-functional theory calculations, we investigate systematically the do** properties of layered MX2 (M= Mo, W; X=S, Te) by replacing M or X with the groups III, V and VII elements. It is found that the defect BM is hard to form in MX2 due to the large formation energy originating from the crystal distortion, while AlM is easy to realize compared to the former. In MoS2, WS2 and MoTe2, Al is the most desirable p-type dopant under anion-rich conditions among the group III components, since AlM has relatively low transition and formation energies. With respect to the do** of the group V elements, it is found that the substitutions on the cation sites have deeper defect levels than those on the anion sites due to the strong electronegativity. AsTe and SbTe in MoTe2 and WTe2 are trend to form shallow acceptors under cation-rich conditions, indicating high hole-concentrations for p-type do**, whereas SbS in MoS2 and PTe in WTe2 are shown to be good p-type candidates under cation-rich conditions. In despite of that the substitutions of group VII on X site have low formation energies, the transition energies are too high to achieve n-type MoS2 and WS2. Nevertheless, for MoTe2, the substitutions with the group VII elements on the anion sites are suitable for n-type do** on account of the shallow donor levels and low formation energies under Mo-rich condition. As to WTe2, F is the only potential donor due to the shallow transition energy of FTe. Our findings of filtering out unfavorable and identifying favorable dopants in MX2 are very valuable for experimental implementations. △ Less

Submitted 26 April, 2018; v1 submitted 26 January, 2018; originally announced March 2018.

Comments: Some of the calculations are problematic. We have to withdraw the paper in arXiv

Origin of charge transfer and enhanced electron-phonon coupling in single unit-cell FeSe films on SrTiO3

Authors: Huimin Zhang, Ding Zhang, Xiaowei Lu, Chong Liu, Guanyu Zhou, Xucun Ma, Lili Wang, Peng Jiang, Qi-Kun Xue, Xinhe Bao

Abstract: Interface charge transfer and electron-phonon coupling have been suggested to play a crucial role in the recently discovered high-temperature superconductivity of single unit-cell FeSe films on SrTiO3. However, their origin remains elusive. Here, using ultraviolet photoemission spectroscopy (UPS) and element-sensitive X-ray photoemission spectroscopy (XPS), we identify the strengthened Ti-O bond t… ▽ More Interface charge transfer and electron-phonon coupling have been suggested to play a crucial role in the recently discovered high-temperature superconductivity of single unit-cell FeSe films on SrTiO3. However, their origin remains elusive. Here, using ultraviolet photoemission spectroscopy (UPS) and element-sensitive X-ray photoemission spectroscopy (XPS), we identify the strengthened Ti-O bond that contributes to the interface enhanced electron-phonon coupling and unveil the band bending at the FeSe/SrTiO3 interface that leads to the charge transfer from SrTiO3 to FeSe films. We also observe band renormalization that accompanies the onset of superconductivity. Our results not only provide valuable insights into the mechanism of the interface-enhanced superconductivity, but also point out a promising route towards designing novel superconductors in heterostructures with band-bending induced charge transfer and interfacial enhanced electron-phonon coupling. △ Less

Submitted 18 December, 2017; originally announced December 2017.

Journal ref: Nature Commun.8,214 (2017)

Impacts of Do** on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion

Authors: Guangnan Zhou, Kwang Hong Lee, Dalaver H. Anjum, Qiang Zhang, Xixiang Zhang, Chuan Seng Tan, Guangrui, Xia

Abstract: Ge-on-Si structures with three different dopants (P, As and B) and those without intentional do** were grown and annealed. Several different materials characterization methods have been performed to characterize the Ge film quality. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. On the other hand, B doped Ge films have threading dislocations… ▽ More Ge-on-Si structures with three different dopants (P, As and B) and those without intentional do** were grown and annealed. Several different materials characterization methods have been performed to characterize the Ge film quality. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. On the other hand, B doped Ge films have threading dislocations above 1 x 10^8 cm-2. While P and As do** can reduce the threading dislocation density to be less than 10^6 cm-2 without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x_Ge range and with the dislocation mediated diffusion term was established. The Kirkendall effect has been observed. The results are of technical significance for the structure, do**, and process design of Ge-on-Si based devices, especially for photonic applications. △ Less

Submitted 14 December, 2017; originally announced December 2017.

Tailoring symmetric metallic and magnetic edge states of nanoribbon in semiconductive monolayer PtS2

Authors: Ziran Liu, Shan Liu, Heyu Zhu, Guanghui Zhou

Abstract: Fabrication of atomic scale of metallic wire remains challenging. In present work, a nanoribbon with two parallel symmetric metallic and magnetic edges was designed from semiconductive monolayer PtS2 by employing first-principles calculations based on density functional theory. Edge energy, bonding charge density, band structure and simulated STM of possible edges states of PtS2 were systematicall… ▽ More Fabrication of atomic scale of metallic wire remains challenging. In present work, a nanoribbon with two parallel symmetric metallic and magnetic edges was designed from semiconductive monolayer PtS2 by employing first-principles calculations based on density functional theory. Edge energy, bonding charge density, band structure and simulated STM of possible edges states of PtS2 were systematically studied. It was found that Pt-terminated edge nanoribbons were the relatively stable metallic and magnetic edge tailored from a noble transition metal dichalcogenides PtS2. The nanoribbon with two atomic metallic wires may have promising application as nano power transmission lines, which at least two lines are needed. △ Less

Submitted 19 October, 2017; originally announced October 2017.

Comments: 15 pages, 9 figures

Strain-controlled valley and spin separation in silicene heterojunctions

Authors: Yuan Li, H. B. Zhu, G. Q. Wang, Y. Z. Peng, J. R. Xu, Z. H. Qian, R. Bai, G. H. Zhou, C. Yesilyurt, Z. B. Siu, M. B. A. Jalil

Abstract: We adopt the tight-binding mode-matching method to study the strain effect on silicene heterojunctions. It is found that valley- and spin-dependent separation of electrons cannot be achieved by the electric field only. When a strain and an electric field are simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmiss… ▽ More We adopt the tight-binding mode-matching method to study the strain effect on silicene heterojunctions. It is found that valley- and spin-dependent separation of electrons cannot be achieved by the electric field only. When a strain and an electric field are simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the up-spin and down-spin electrons will also move in the two opposite transverse directions. Therefore, one can realize an effective modulation of valley- and spin-dependent transport by changing the amplitude and the stretch direction of the strain. The phenomenon of the strain-induced valley and spin deflection can be exploited for silicene-based valleytronics devices. △ Less

Submitted 28 June, 2018; v1 submitted 8 July, 2017; originally announced July 2017.

Comments: 6 pages, 6 figures

Journal ref: Phys. Rev. B 97, 085427 (2018)

Observation of novel gapped phases in potassium doped single layer p-terphenyl on Au (111)

Authors: M. Q. Ren, W. Chen, Q. Liu, C. Chen, Y. J. Qiao, Y. J. Chen, G. Zhou, T. Zhang, Y. J. Yan, D. L. Feng

Abstract: Recently, superconductivity in potassium (K) doped p-terphenyl (C18H14) has been suggested by the possible observation of the Meissner effect and subsequent photoemission spectroscopy measurements, but the detailed lattice structure and more-direct evidence are still lacking. Here we report a low temperature scanning tunneling microscopy/spectroscopy (STM/STS) study on K-doped single layer p-terph… ▽ More Recently, superconductivity in potassium (K) doped p-terphenyl (C18H14) has been suggested by the possible observation of the Meissner effect and subsequent photoemission spectroscopy measurements, but the detailed lattice structure and more-direct evidence are still lacking. Here we report a low temperature scanning tunneling microscopy/spectroscopy (STM/STS) study on K-doped single layer p-terphenyl films grown on Au (111). We observe several ordered phases with different morphologies and electronic behaviors, in two of which a sharp and symmetric low-energy gap of about 11 meV opens below 50 K. In particular, the gap shows no obvious response to a magnetic field up to 11 Tesla, which would caution against superconductivity as an interpretation in previous reports of K-doped p-terphenyl materials. Such gapped phases are rarely (if ever) observed in single layer hydrocarbon molecular crystals. Our work also paves the way for fabricating doped two-dimensional (2D) hydrocarbon materials, which will provide a platform to search for novel emergent phenomena. △ Less

Submitted 28 May, 2017; originally announced May 2017.

Comments: 16 pages, 10 figures

Journal ref: Phys. Rev. B 99, 045417 (2019)

High-efficiency spontaneous terahertz emission from electrically-excited plasmons in AlGaN/GaN two-dimensional electron gas

Authors: Hua Qin, Yao Yu, Jiandong Sun, Zhongxin Zheng, Yongdan Huang, Xingxin Li, Yu Zhou, Dongmin Wu, Zhipeng Zhang, Cunhong Zeng, Yong Cai, Xiaoyu Zhang, Baoshun Zhang, Xuecou Tu, Gaochao Zhou, Biaobing **, Lin Kang, Jian Chen, Peiheng Wu

Abstract: The advance of terahertz science and technology yet lays wait for the breakthrough in high-efficiency and high-power solid-state terahertz sources applicable at room temperature. Plasmon in two-dimensional electron gas (2DEG) has long been pursued as a type of promising active medium for terahertz emitters. However, a high wall-plug efficiency sufficient for high-power operation has not been achie… ▽ More The advance of terahertz science and technology yet lays wait for the breakthrough in high-efficiency and high-power solid-state terahertz sources applicable at room temperature. Plasmon in two-dimensional electron gas (2DEG) has long been pursued as a type of promising active medium for terahertz emitters. However, a high wall-plug efficiency sufficient for high-power operation has not been achieved. Here we report spontaneous terahertz emission tunable in a frequency range from 0.3 to 2.5 THz through electrical excitation of plasmon or plasmon-polariton modes in a grating-gate coupled AlGaN/GaN 2DEG at 7 K. A wall-plug efficiency ranging from $10^{-6}$ to $10^{-1}$ is found by tuning the energy (4.5 eV to 0.5 eV) of tunneling electrons between the grating gates and the 2DEG. The total emission power, albeit below 15 nW, is already detectable by using a direct terahertz field-effect transistor detector based on the same type of 2DEG. The findings indicate that both high-efficiency and high-power terahertz plasmon-polariton emission could be obtained by a proper injection of tunneling electrons with low energy and high current density. △ Less

Submitted 4 February, 2017; originally announced February 2017.

Comments: 4.5 pages, 4 figures