Showing 1–38 of 38 results for author: Zhong, X

Prediction of fully metallic σ-bonded boron framework induced high superconductivity above 100 K in thermodynamically stable Sr2B5 at 40 GPa

Authors: Xin Yang, Wenbo Zhao, Liang Ma, Wencheng Lu, Xin Zhong, Yu Xie, Hanyu Liu, Yanming Ma

Abstract: Metal borides have been considered as potential high-temperature superconductors since the discovery of record-holding 39 K superconductivity in bulk MgB2. In this work, we identified a superconducting yet thermodynamically stable F43m Sr2B5 at 40 GPa with a unique covalent sp3-hybridized boron framework through extensive first-principles structure searches. Remarkably, solving the anisotropic Mig… ▽ More Metal borides have been considered as potential high-temperature superconductors since the discovery of record-holding 39 K superconductivity in bulk MgB2. In this work, we identified a superconducting yet thermodynamically stable F43m Sr2B5 at 40 GPa with a unique covalent sp3-hybridized boron framework through extensive first-principles structure searches. Remarkably, solving the anisotropic Migdal-Eliashberg equations resulted in a high superconducting critical temperature (Tc) around 100 K, exceeding the boiling point (77 K) of liquid nitrogen. Our in-depth analysis revealed that the high-temperature superconductivity mainly originates from the strong coupling between the metalized σ-bonded electronic bands and E phonon modes of boron atoms. Moreover, anharmonic phonon simulations suggest that F43m Sr2B5 might be recovered to ambient pressure. Our current findings provide a prototype structure with a full σ-bonded boron framework for the design of high-Tc superconducting borides that may expand to a broader variety of lightweight compounds. △ Less

Submitted 21 October, 2023; originally announced October 2023.

Comments: 5 pages

Nano-Subsidence Assisted Precise Integration of Patterned Two-Dimensional Materials for High-Performance Photodetector Arrays

Authors: Song-Lin Li, Lei Zhang, Xiaolan Zhong, Marco Gobbi, Simone Bertolazzi, Wei Guo, Bin Wu, Yunqi Liu, Emanuele Orgiu, Paolo Samorì

Abstract: The spatially precise integration of arrays of micro-patterned two-dimensional (2D) crystals onto three-dimensionally structured Si/SiO$_2$ substrates represents an attractive strategy towards the low-cost system-on-chip integration of extended functions in silicon microelectronics. However, the reliable integration of the arrays of 2D materials on non-flat surfaces has thus far proved extremely c… ▽ More The spatially precise integration of arrays of micro-patterned two-dimensional (2D) crystals onto three-dimensionally structured Si/SiO$_2$ substrates represents an attractive strategy towards the low-cost system-on-chip integration of extended functions in silicon microelectronics. However, the reliable integration of the arrays of 2D materials on non-flat surfaces has thus far proved extremely challenging due to their poor adhesion to underlying substrates as ruled by weak van der Waals interactions. Here we report on a novel fabrication method based on nano-subsidence which enables the precise and reliable integration of the micro-patterned 2D materials/silicon photodiode arrays exhibiting high uniformity. Our devices display peak sensitivity as high as 0.35 A/W and external quantum efficiency (EQE) of ca. 90%, outperforming most commercial photodiodes. The nano-subsidence technique opens a viable path to on-chip integrate 2D crystals onto silicon for beyond-silicon microelectronics. △ Less

Submitted 24 June, 2023; originally announced June 2023.

Comments: 41 pages, 5 figures, with SI

Journal ref: ACS Nano, 13, 2654 (2019)

Epitaxial growth of high quality $Mn_3Sn$ thin films by pulsed laser deposition

Authors: Dong Gao, Zheng Peng, Ningbin Zhang, Yunfei Xie, Yucong Yang, Weihao Yang, Shuang Xia, Wei Yan, Longjiang Deng, Tao Liu, Jun Qin, Xiaoyan Zhong, Lei Bi

Abstract: Non-collinear antiferromagnet Weyl semimetal $Mn_3Sn$ have attracted great research interest recently. Although large anomalous Hall effect, anomalous Nernst effect and magneto-optical effect have been observed in $Mn_3Sn$, most studies are based on single crystals. So far, it is still challenging to grow high quality epitaxial $Mn_3Sn$ thin films with transport and optical properties comparable t… ▽ More Non-collinear antiferromagnet Weyl semimetal $Mn_3Sn$ have attracted great research interest recently. Although large anomalous Hall effect, anomalous Nernst effect and magneto-optical effect have been observed in $Mn_3Sn$, most studies are based on single crystals. So far, it is still challenging to grow high quality epitaxial $Mn_3Sn$ thin films with transport and optical properties comparable to their single crystal counterparts. Here, we report the structure, magneto-optical and transport properties of epitaxial $Mn_3Sn$ thin films fabricated by pulsed laser deposition (PLD). Highly oriented $Mn_{3+x}Sn_{1-x}$ (0001) and (11$\bar2$0) epitaxial films are successfully growth on single crystalline $Al_2O_3$ and MgO substrates. Large anomalous Hall effect (AHE) up to $\left| ΔR_H\right|$=3.02 $μΩ\cdot cm$, and longitudinal magneto-optical Kerr effect (LMOKE) with $θ_K$ = 38.1 mdeg at 633 nm wavelength are measured at 300 K temperature, which are comparable to $Mn_3Sn$ single crystals. Our work demonstrates that high quality $Mn_3Sn$ epitaxial thin films can be fabricated by PLD, paving the way for future device applications. △ Less

Submitted 8 August, 2022; originally announced August 2022.

Actively tuning anisotropic light-matter interaction in biaxial hyperbolic material $α$-MoO$_3$ using phase change material VO$_2$ and graphene

Authors: Kun Zhou, Yang Hu, Xiaoxing Zhong, Xiaohu Wu

Abstract: Anisotropic hyperbolic phonon polaritons (PhPs) in natural biaxial hyperbolic material MoO$_3$ has opened up new avenues for mid-infrared nanophotonics, while active tunability of $α$-MoO$_3$ PhPs is still an urgent problem needing to be solved.In this study, we present a theoretical demonstration of actively tuning $α$-MoO$_3$ PhPs using phase change material VO$_2$ and graphene. It is observed t… ▽ More Anisotropic hyperbolic phonon polaritons (PhPs) in natural biaxial hyperbolic material MoO$_3$ has opened up new avenues for mid-infrared nanophotonics, while active tunability of $α$-MoO$_3$ PhPs is still an urgent problem needing to be solved.In this study, we present a theoretical demonstration of actively tuning $α$-MoO$_3$ PhPs using phase change material VO$_2$ and graphene. It is observed that $α$-MoO$_3$ PhPs are greatly depending on the propagation plane angle of PhPs. The metal-to-insulator phase transition of VO$_2$ has a significant effect on the hybridization PhPs of the $α$-MoO$_3$/VO$_2$ structure and allows to obtain an actively tunable $α$-MoO$_3$ PhPs, which is especially obvious when the propagation plane angle of PhPs is 90. △ Less

Submitted 9 June, 2022; originally announced June 2022.

Dynamics of Polar Skyrmion Bubbles under Electric Fields

Authors: Ruixue Zhu, Zhexin Jiang, Xinxin Zhang, Xiangli Zhong, Congbing Tan, Mingwei Liu, Yuanwei Sun, Xiaomei Li, Ruishi Qi, Ke Qu, Zhetong Liu, Mei Wu, Mingqiang Li, Boyuan Huang, Zhi Xu, **bin Wang, Kaihui Liu, Peng Gao, Jie Wang, Jiangyu Li, Xuedong Bai

Abstract: Room-temperature polar skyrmion bubbles that are recently found in oxide superlattice, have received enormous interests for their potential applications in nanoelectronics due to the nanometer size, emergent chirality, and negative capacitance. For practical applications, the ability to controllably manipulate them by using external stimuli is prerequisite. Here, we study the dynamics of individua… ▽ More Room-temperature polar skyrmion bubbles that are recently found in oxide superlattice, have received enormous interests for their potential applications in nanoelectronics due to the nanometer size, emergent chirality, and negative capacitance. For practical applications, the ability to controllably manipulate them by using external stimuli is prerequisite. Here, we study the dynamics of individual polar skyrmion bubbles at the nanoscale by using in situ biasing in a scanning transmission electron microscope. The reversible electric field-driven phase transition between topological and trivial polar states are demonstrated. We create, erase and monitor the shrinkage and expansion of individual polar skyrmions. We find that their transition behaviors are substantially different from that of magnetic analogue. The underlying mechanism is discussed by combing with the phase-field simulations. The controllable manipulation of nanoscale polar skyrmions allows us to tune the dielectric permittivity at atomic scale and detailed knowledge of their phase transition behaviors provides fundamentals for their applications in nanoelectronics. △ Less

Submitted 28 July, 2021; originally announced July 2021.

Role of intermetallic phases in initiation and propagation of intergranular corrosion of an Al-Li-Cu-Mg alloy

Authors: X. Xu, M. Hao, J. Chen, W. He, G, Li, K. Li, C. Jiao, X. L. Zhong, K. L. Moore, T. L. Burnett, X. Zhou

Abstract: Intermetallic phases in a recently developed Al-Li-Cu-Mg alloy have been investigated to understand their roles in the initiation and propagation processes of intergranular corrosion. Corrosion initiation involves trenching formation in the Al matrix adjacent to the large particles of Al7Cu2(Fe, Mn) phases. These phases containing Li are electrochemically active and susceptible to self-dissolution… ▽ More Intermetallic phases in a recently developed Al-Li-Cu-Mg alloy have been investigated to understand their roles in the initiation and propagation processes of intergranular corrosion. Corrosion initiation involves trenching formation in the Al matrix adjacent to the large particles of Al7Cu2(Fe, Mn) phases. These phases containing Li are electrochemically active and susceptible to self-dissolution via a de-alloying mechanism during corrosion process. The subsurface particles of Al7Cu2(Fe, Mn) and Al20Cu2Mn3 phases act as the internal cathodes for continuous corrosion propagation along the particle-matrix interface and the associated grain boundaries. Corrosion propagation along the particle-matrix interface was facilitated by the anodic dissolution of the surrounding Al matrix due to the micro-galvanic interaction with the cathodic intermetallic phases. In addition, T1 (Al2CuLi) precipitates and the isolated particles of Al7Cu2(Fe, Mn) and Al20Cu2Mn3 phases were dissolved along the path of corrosion propagation. The dissolved metal ions were redeposited through the network of crevice. △ Less

Submitted 29 June, 2021; originally announced June 2021.

Manipulation of polar vortex chirality in oxide superlattices

Authors: Pan Chen, Congbing Tan, Zhexin Jiang, Peng Gao, Yuanwei Sun, Xiaomei Li, Ruixue Zhu, Lei Liao, Xu Hou, Lifen Wang, Ke Qu, Ning Li, Xiaomin Li, Zhi Xu, Kaihui Liu, Wenlong Wang, **bin Wang, ** Ouyang, Xiangli Zhong, Jie Wang, Xuedong Bai

Abstract: Topological polar vortices that are the electric analogues of magnetic objects, present great potential in applications of future nanoelectronics due to their nanometer size, anomalous dielectric response, and chirality. To enable the functionalities, it is prerequisite to manipulate the polar states and chirality by using external stimuli. Here, we probe the evolutions of polar state and chiralit… ▽ More Topological polar vortices that are the electric analogues of magnetic objects, present great potential in applications of future nanoelectronics due to their nanometer size, anomalous dielectric response, and chirality. To enable the functionalities, it is prerequisite to manipulate the polar states and chirality by using external stimuli. Here, we probe the evolutions of polar state and chirality of polar vortices in PbTiO3/SrTiO3 superlattices under electric field by using atomically resolved in situ scanning transmission electron microscopy and phase-field simulations. We find that the adjacent clockwise and counterclockwise vortex usually have opposite chirality. The phase-field simulations suggest that the rotation reversal or axial polarization switching can lead to the chirality change. Guided by which, we experimentally validate that the vortex rotation direction can be changed by applying and subsequently removing of electric fields, offering a potential strategy to manipulate the vortex chirality. The revealed details of dynamic behavior for individual polar vortices at atomic scale and the proposed strategy for chirality manipulation provide fundamentals for future device applications. △ Less

Submitted 25 April, 2021; originally announced April 2021.

Creating topological polar structure in a nonpolar matter

Authors: Adeel Y. Abid, Yuanwei Sun, Xu Hou, Xiangli Zhong, Congbing Tan, Ruixue Zhu, Haoyun Chen, Ke Qu, Yuehui Li, Mei Wu, **gmin Zhang, **bin Wang, Kaihui Liu, Xuedong Bai, Dapeng Yu, Jie Wang, Jiangyu Li, Peng Gao

Abstract: Nontrivial topological structures offer rich playground in condensed matter physics including fluid dynamics, superconductivity, and ferromagnetism, and they promise alternative device configurations for post-Moore spintronics and electronics. Indeed, magnetic skyrmions are actively pursued for high-density data storage, while polar vortices with exotic negative capacitance may enable ultralow pow… ▽ More Nontrivial topological structures offer rich playground in condensed matter physics including fluid dynamics, superconductivity, and ferromagnetism, and they promise alternative device configurations for post-Moore spintronics and electronics. Indeed, magnetic skyrmions are actively pursued for high-density data storage, while polar vortices with exotic negative capacitance may enable ultralow power consumption in microelectronics. Following extensive investigations on a variety of magnetic textures including vortices, domain walls and skyrmions in the past decades, studies on polar topologies have taken off in recent years, resulting in discoveries of closure domains, vortices, and skyrmions in ferroelectric materials. Nevertheless, the atomic-scale creation of topological polar structures is largely confined in a single ferroelectric system, PbTiO3 (PTO) with large polarization, casting doubt on the generality of polar topologies and limiting their potential applications. In this work, we successfully create previously unrealized atomic-scale polar antivortices in the nominally nonpolar SrTiO3 (STO), expanding the reaches of topological structures and completing an important missing link in polar topologies. The work shed considerable new insight into the formation of topological polar structures, and offers guidance in searching for new polar textures. △ Less

Submitted 30 July, 2020; originally announced July 2020.

Double lattice potential for molecular dynamics simulation of silicon with demonstrated validity

Authors: Hui Zhang, Chongyang Wei, Zhongwu Liu, Xichun Zhong, Dongling Jiao, Wanqi Qiu, Hongya Yu

Abstract: To reproduce the diamond structure of silicon, double lattice (DL) potential constructed from two interatomic potentials for face centered cubic (fcc) lattice, is proposed for molecular dynamics (MD) simulations. For the validity test of MD simulation, the Tersoff potential, the Stillinger and Weber (SW) potential, the environment-dependent interatomic (EDI) potential, the charge optimized many-bo… ▽ More To reproduce the diamond structure of silicon, double lattice (DL) potential constructed from two interatomic potentials for face centered cubic (fcc) lattice, is proposed for molecular dynamics (MD) simulations. For the validity test of MD simulation, the Tersoff potential, the Stillinger and Weber (SW) potential, the environment-dependent interatomic (EDI) potential, the charge optimized many-body (COMB) potential, and the modified embedded-atom (MEAM) potential have been also employed for comparison. The crystal lattice of simulated silicon system is identified by calculating the distribution functions of the distances between the atoms and the angles between the lines linking an atom with its nearest neighbors. The results are also compared with the perfect silicon crystal. The crystal lattice, the crystallization temperature, and elastic constants have been calculated from MD simulations using above potentials. The results show that the systems with modified Tersoff, SW, EDI, COMB, and MEAM potentials could not exhibit the diamond structure and only the DL potential gives diamond lattice. The ground state for DL potential is the wurtzite structure, and the metastable state formed during rapid cooling is the cubic diamond structure. The physical parameters obtained from the simulation with DL potential are in agreement with the experiment results. This work indicated that only DL potential is valid for MD simulation of silicon crystal among above various potentials. △ Less

Submitted 11 August, 2020; v1 submitted 3 February, 2020; originally announced February 2020.

Comments: 8 pages,7 figures

Self-formed 2D/3D Heterostructure on the Edge of 2D Ruddlesden-Popper Hybrid Perovskites Responsible for Intriguing Optoelectronic Properties and Higher Cell Efficiency

Authors: Zhaojun Qin, Shenyu Dai, Chalapathi Charan Gajjala, Chong Wang, Viktor G. Hadjiev, Guang Yang, Jiabing Li, Xin Zhong, Zhongjia Tang, Yan Yao, Arnold M. Guloy, Rohith Reddy, David Mayerich, Liangzi Deng, Qingkai Yu, Guoying Feng, Zhiming Wang, Jiming Bao

Abstract: The observation of low energy edge photoluminescence and its beneficial effect on the solar cell efficiency of Ruddlesden-Popper perovskites has unleashed an intensive research effort to reveal its origin. This effort, however, has been met with more challenges as the underlying material structure has still not been identified; new modellings and observations also do not seem to converge. Using 2D… ▽ More The observation of low energy edge photoluminescence and its beneficial effect on the solar cell efficiency of Ruddlesden-Popper perovskites has unleashed an intensive research effort to reveal its origin. This effort, however, has been met with more challenges as the underlying material structure has still not been identified; new modellings and observations also do not seem to converge. Using 2D (BA)2(MA)2Pb3Br10 as an example, we show that 3D MAPbBr3 is formed due to the loss of BA on the edge. This self-formed MAPbBr3 can explain the reported edge emission under various conditions, while the reported intriguing optoelectronic properties such as fast exciton trap** from the interior 2D perovskite, rapid exciton dissociation and long carrier lifetime can be understood via the self-formed 2D/3D lateral perovskite heterostructure. The 3D perovskite is identified by submicron infrared spectroscopy, the emergence of XRD signature from freezer-milled nanometer-sized 2D perovskite and its photoluminescence response to external hydrostatic pressure. The revelation of this edge emission mystery and the identification of a self-formed 2D/3D heterostructure provide a new approach to engineering 2D perovskites for high-performance optoelectronic devices. △ Less

Submitted 26 January, 2020; originally announced January 2020.

Compensated magnetic insulators for extremely fast spin-orbitronics

Authors: Heng-An Zhou, Yiqing Dong, Teng Xu, Kun Xu, Luis Sánchez-Tejerina, Le Zhao, You Ba, Pierluigi Gargiani, Manuel Valvidares, Yonggang Zhao, Mario Carpentieri, Oleg A. Tretiakov, Xiaoyan Zhong, Giovanni Finocchio, Se Kwon Kim, Wanjun Jiang

Abstract: The fast spin dynamics provide many opportunities for the future communication and memory technologies. One of the most promising examples is the domain wall (DW) racetrack memory. To achieve fast device performances, the high-speed motion of DWs is naturally demanded that leaves antiferromagnets (AFMs) and compensated ferrimagnets (FIMs) as the promising materials. While controlling and probing t… ▽ More The fast spin dynamics provide many opportunities for the future communication and memory technologies. One of the most promising examples is the domain wall (DW) racetrack memory. To achieve fast device performances, the high-speed motion of DWs is naturally demanded that leaves antiferromagnets (AFMs) and compensated ferrimagnets (FIMs) as the promising materials. While controlling and probing the dynamics of DWs in AFMs remains challenging, the fast motion of DWs with velocities around 1500 m/s has been demonstrated in metallic FIMs. The velocity of DWs in metallic FIMs is, however, suppressed by the magnetic dam** of conduction electrons, which motivates us to explore how fast DWs can move in insulating FIMs where the conduction electron is absent. In this work, through synthesizing compensated FIM insulator Gd3Fe5O12 thin films with a perpendicular magnetic anisotropy, we demonstrate that the spin-orbit torque (SOT) induced motion of DWs along the Gd3Fe5O12/Pt racetrack can approach 6000 m/s. Our results show that the exceptionally fast motion of DWs can be achieved in compensated FIM insulators owing to small dam** inherent to magnetic insulators, which could potentially facilitate the emerging ultrahigh-speed spintronic logics and racetrack memories by introducing insulating compensated FIMs as a new material platform. △ Less

Submitted 3 December, 2019; originally announced December 2019.

Comments: All comments are welcome

Atomic-scale observations of electrical and mechanical manipulation of topological polar flux-closure

Authors: Xiaomei Li, Congbing Tan, Peng Gao, Yuanwei Sun, Pan Chen, Mingqiang Li, Lei Liao, Ruixue Zhu, **bin Wang, Yanchong Zhao, Lifen Wang, Zhi Xu, Kaihui Liu, Xiangli Zhong, Xuedong Bai

Abstract: The ability to controllably manipulate the complex topological polar configurations, such as polar flux-closure via external stimuli, enables many applications in electromechanical devices and nanoelectronics including high-density information storage. Here, by using the atomically resolved in situ scanning transmission electron microscopy, we find that a polar flux-closure structure in PbTiO3/SrT… ▽ More The ability to controllably manipulate the complex topological polar configurations, such as polar flux-closure via external stimuli, enables many applications in electromechanical devices and nanoelectronics including high-density information storage. Here, by using the atomically resolved in situ scanning transmission electron microscopy, we find that a polar flux-closure structure in PbTiO3/SrTiO3 superlattices films can be reversibly switched to ordinary mono ferroelectric c domain or a domain under electric field or stress. Specifically, the electric field initially drives the flux-closure move and breaks them to form intermediate a/c striped domains, while the mechanical stress firstly starts to squeeze the flux-closures to convert into small vortices at the interface and form a continues dipole wave. After the removal of the external stimuli, the flux-closure structure spontaneously returns. Our atomic study provides valuable insights into understanding the lattice-charge interactions and the competing interactions balance in these complex topological structures. Such reversible switching between the flux-closure and ordinary ferroelectric domains also provides the foundation for applications such as memories and sensors. △ Less

Submitted 21 November, 2019; originally announced November 2019.

Comments: 22 pages, 5figures,

Atomic Imaging of Mechanically Induced Topological Transition of Ferroelectric Vortices

Authors: Pan Chen, Xiangli Zhong, Jacob A. Zorn, Mingqiang Li, Yuanwei Sun, Adeel Y. Abid, Chuanlai Ren, Yuehui Li, Xiaomei Li, Xiumei Ma, **bin Wang, Kaihui Liu, Zhi Xu, Congbing Tan, Longqing Chen, Peng Gao, Xuedong Bai

Abstract: Ferroelectric vortices formed through complex lattice-charge interactions have great potential in applications for future nanoelectronics such as memories. For practical applications, it is crucial to manipulate these topological states under external stimuli. Here, we apply mechanical loads to locally manipulate the vortices in a PbTiO3-SrTiO3 superlattice via atomically resolved in situ scanning… ▽ More Ferroelectric vortices formed through complex lattice-charge interactions have great potential in applications for future nanoelectronics such as memories. For practical applications, it is crucial to manipulate these topological states under external stimuli. Here, we apply mechanical loads to locally manipulate the vortices in a PbTiO3-SrTiO3 superlattice via atomically resolved in situ scanning transmission electron microscopy. The vortices undergo a transition to the a-domain with in-plane polarization under external compressive stress and spontaneously recover after removal of the stress. We reveal the detailed transition process at the atomic scale and reproduce this numerically using phase-field simulations. These findings provide new pathways to control the exotic topological ferroelectric structures for future nanoelectronics and also valuable insights into understanding of lattice-charge interactions at nanoscale. △ Less

Submitted 30 September, 2019; originally announced October 2019.

Crossover from 2D metal to 3D Dirac semimetal in metallic PtTe2 films with local Rashba effect

Authors: Ke Deng, Mingzhe Yan, Chu-** Yu, Jiaheng Li, Xue Zhou, Kenan Zhang, Yuxin Zhao, Koji Miyamoto, Taichi Okuda, Wenhui Duan, Yang Wu, Xiaoyan Zhong, Shuyun Zhou

Abstract: PtTe2 and PtSe2 with trigonal structure have attracted extensive research interests since the discovery of type-II Dirac fermions in the bulk crystals. The evolution of the electronic structure from bulk 3D topological semimetal to 2D atomic thin films is an important scientific question. While a transition from 3D type-II Dirac semimetal in the bulk to 2D semiconductor in monolayer (ML) film has… ▽ More PtTe2 and PtSe2 with trigonal structure have attracted extensive research interests since the discovery of type-II Dirac fermions in the bulk crystals. The evolution of the electronic structure from bulk 3D topological semimetal to 2D atomic thin films is an important scientific question. While a transition from 3D type-II Dirac semimetal in the bulk to 2D semiconductor in monolayer (ML) film has been reported for PtSe2, so far the evolution of electronic structure of atomically thin PtTe2 films still remains unexplored. Here we report a systematic angle-resolved photoemission spectroscopy (ARPES) study of the electronic structure of high quality PtTe2 films grown by molecular beam epitaxy with thickness from 2 ML to 6 ML. ARPES measurements show that PtTe2 films still remain metallic even down to 2 ML thickness, which is in sharp contrast to the semiconducting property of few layer PtSe2 film. Moreover, a transition from 2D metal to 3D type-II Dirac semimetal occurs at film thickness of 4-6 ML. In addition, Spin-ARPES measurements reveal helical spin textures induced by local Rashba effect in the bulk PtTe2 crystal, suggesting that similar hidden spin is also expected in few monolayer PtTe2 films. Our work reveals the transition from 2D metal to 3D topological semimetal and provides new opportunities for investigating metallic 2D films with local Rashba effect. △ Less

Submitted 14 June, 2019; v1 submitted 15 May, 2019; originally announced May 2019.

Comments: 10 pages, 4 figures

Journal ref: Science Bulletin 64, 1044--1048 (2019)

Solution Processed Large-scale Multiferroic Complex Oxide Epitaxy with Magnetically Switched Polarization

Authors: Cong Liu, Feng An, Paria S. M. Gharavi, Qinwen Lu, Chao Chen, Liming Wang, Xiaozhi Zhan, Zedong Xu, Yuan Zhang, Ke Qu, Junxiang Yao, Yun Ou, Xiangli Zhong, Dongwen Zhang, Nagarajan Valanoor, Lang Chen, Tao Zhu, Deyang Chen, Xiaofang Zhai, Peng Gao, Tingting Jia, Shuhong Xie, Gaokuo Zhong, Jiangyu Li

Abstract: Complex oxides with tunable structures have many fascinating properties, though high-quality complex oxide epitaxy with precisely controlled composition is still out of reach. Here we have successfully developed solution-based single crystalline epitaxy for multiferroic (1-x)BiTi(1-y)/2FeyMg(1-y)/2O3-(x)CaTiO3 (BTFM-CTO) solid solution in large area, confirming its ferroelectricity at atomic-scale… ▽ More Complex oxides with tunable structures have many fascinating properties, though high-quality complex oxide epitaxy with precisely controlled composition is still out of reach. Here we have successfully developed solution-based single crystalline epitaxy for multiferroic (1-x)BiTi(1-y)/2FeyMg(1-y)/2O3-(x)CaTiO3 (BTFM-CTO) solid solution in large area, confirming its ferroelectricity at atomic-scale with a spontaneous polarization of 79~89uC/cm2. Careful compositional tuning leads to a bulk magnetization of ~0.07uB/Fe at room temperature, enabling magnetically induced polarization switching exhibiting a large magnetoelectric coefficient of 2.7-3.0X10-7s/m. This work demonstrates the great potential of solution processing in large-scale complex oxide epitaxy and establishes novel room-temperature magnetoelectric coupling in epitaxial BTFM-CTO film, making it possible to explore a much wider space of composition, phase, and structure that can be easily scaled up for industrial applications. △ Less

Submitted 6 April, 2019; originally announced April 2019.

Oxygen-Octahedral-Tilting-Driven Topological Hall Effect in Ultrathin SrRuO3 Films

Authors: Youdi Gu, Yi-Wen Wei, Kun Xu, Hongrui Zhang, Fei Wang, Fan Li, Muhammad Shahrukh Saleem, Cui-Zu Chang, Jirong Sun, Cheng Song, Ji Feng, Xiaoyan Zhong, Wei Liu, Zhidong Zhang, **g Zhu, Feng Pan

Abstract: Topological spin textures as an emerging class of topological matter offer a medium for information storage and processing. The recently discovered topological Hall effect (THE) is considered as a fingerprint for electrically probing non-trivial spin-textures. But the origin of THE in oxides has remained elusive. Here we report an observation of the THE in ultrathin (unit cells. u.c.) 4d ferromagn… ▽ More Topological spin textures as an emerging class of topological matter offer a medium for information storage and processing. The recently discovered topological Hall effect (THE) is considered as a fingerprint for electrically probing non-trivial spin-textures. But the origin of THE in oxides has remained elusive. Here we report an observation of the THE in ultrathin (unit cells. u.c.) 4d ferromagnetic SrRuO3 films grown on SrTiO3(001) substrates, which can be attributed to the chiral ordering of spin structure (i.e., skyrmion-like) in the single SrRuO3 layer without contacting 5d oxide SrIrO3 layer. It is revealed that the RuO6 octahedral tilting induced by local orthorhombic-to-tetragonal structural phase transition exists across the SrRuO3/SrTiO3 interface, which naturally breaks the inversion symmetry. Our theoretical calculations demonstrate that the Dzyaloshinskii-Moriya (DM) interaction arises owing to the broken inversion symmetry and strong spin-orbit interaction of 4d SrRuO3. This DM interaction can stabilize the Néel-type magnetic skyrmions, which in turn accounts for the observed THE in transport. The RuO6 octahedral tilting-induced DM interaction provides a pathway toward the electrical control of the topological spin textures and resultant THE, which is confirmed both experimentally and theoretically. Besides the fundamental significance, the understanding of THE in oxides and its electrical manipulation presented in this work could advance the low power cost topological electronic and spintronic applications. △ Less

Submitted 22 November, 2018; originally announced November 2018.

Comments: 36 pages, 5 figures

Designing ABO3 crystal structure with Lennard-Jones interatomic potentials

Authors: Hui Zhang, Zhongwu Liu, Xichun Zhong, Dongling Jiao, Wanqi Qiu

Abstract: In this paper, our goal is to design ABO3 crystal structure with simple interatomic Lennard-Jones (LJ) potentials and without setting any initial Bravais lattice and it is carried out by molecular dynamics (MD) simulation. In the simulation, the equilibrium distances between atoms are determined by LJ potentials. For the identification of the microstructure of simulated system, we have calculated… ▽ More In this paper, our goal is to design ABO3 crystal structure with simple interatomic Lennard-Jones (LJ) potentials and without setting any initial Bravais lattice and it is carried out by molecular dynamics (MD) simulation. In the simulation, the equilibrium distances between atoms are determined by LJ potentials. For the identification of the microstructure of simulated system, we have calculated the distribution functions of both the angles between one atom and its nearest neighbors and the distances between atoms and compared the results with those of ideal lattices. The results have clearly shown that we have successfully produced ABO3 crystal structure by MD simulation. △ Less

Submitted 14 September, 2018; originally announced September 2018.

Comments: 5 pages, 5 figures, 7 references

Lennard-Jones interatomic potentials for the allotropes of carbon

Authors: Hui Zhang, Zhongwu Liu, Xichun Zhong, Dongling Jiao, Wanqi Qiu

Abstract: Finding appropriate interatomic potentials which can accurately describe the crystal structure of material is one of important topics in material science. In this paper, several interatomic potentials which comprise of Lennard-Jones (LJ) potentials have been proposed for describing both the crystal structures and the evolution of microstructure of the allotropes of carbon such as diamond and graph… ▽ More Finding appropriate interatomic potentials which can accurately describe the crystal structure of material is one of important topics in material science. In this paper, several interatomic potentials which comprise of Lennard-Jones (LJ) potentials have been proposed for describing both the crystal structures and the evolution of microstructure of the allotropes of carbon such as diamond and graphite. The validity of these LJ potentials can be checked by molecular dynamics (MD) simulation. For the lattice identification of simulated systems, we have calculated the distribution functions of the angles between one atom and its nearest neighbors and the distances between atoms and checked the atomic arrangements. Our simulated results have clearly demonstrated that we have successfully produced diamond and graphite structures by MD simulations and with the above LJ potentials. △ Less

Submitted 1 July, 2018; v1 submitted 27 May, 2018; originally announced May 2018.

Comments: 8 pages, 9 figures, revised title, revised abstract, modified introduction, revised conclusions

Crystallization and non-crystallization of Lennard-Jones particles studied by molecular dynamics simulation

Authors: Hui Zhang, Zhongwu Liu, Xichun Zhong, Dongling Jiao, Wanqi Qiu

Abstract: What lattice Lennard-Jones (LJ) solid favors, the lattice identification of simulated system and the microstructures of liquid and non-crystalline solid are three important questions in condensed physics and material science and are addressed in this paper. Both the crystallization and non-crystallization of LJ particles have been investigated by molecular dynamic (MD) simulation without setting a… ▽ More What lattice Lennard-Jones (LJ) solid favors, the lattice identification of simulated system and the microstructures of liquid and non-crystalline solid are three important questions in condensed physics and material science and are addressed in this paper. Both the crystallization and non-crystallization of LJ particles have been investigated by molecular dynamic (MD) simulation without setting any initial Bravais lattice. To identify the Bravais lattice of simulated system, two distribution functions of both the angles between one particle and its nearest neighbors and the distances between particles have been proposed. The final identification can be made by comparing these two calculated distribution functions with those of ideal Bravais lattices and checking the particle arrangement of simulated system. Our results have shown that simulated systems show either the face-centered cubic (fcc) lattice or the hexagonal close-packed (hcp) lattice. The microstructure of non-crystalline system is similar to that of LJ liquid at a temperature near the crystallization temperature, and shows no order of the second nearest neighbors in comparison with that of crystalline system. This paper has proposed a new way of investigating the microstructure of material and its evolution, and paved the way for MD simulation of large scale particle system consisting of more than one million particles. △ Less

Submitted 18 June, 2018; v1 submitted 20 May, 2018; originally announced May 2018.

Comments: 10 pages, 13 figures; revised title, revised abstract, modified introduction, added references;

Electric-field control of oxygen vacancy and magnetic phase transition in cobaltite/manganite bilayer

Authors: B. Cui, C. Song, F. Li, X. Y. Zhong, Z. C. Wang, P. Werner, Y. D. Gu, H. Q. Wu, J. J. Peng, M. S. Saleem, S. S. P. Parkin, F. Pan

Abstract: Manipulation of oxygen vacancies (V_O) in single oxide layers by varying the electric field can result in significant modulation of the ground state. However, in many oxide multilayers with strong application potentials, e.g. ferroelectric tunnel junctions and solid-oxide fuel cells, understanding V_O behaviour in various layers under an applied electric field remains a challenge, owing to complex… ▽ More Manipulation of oxygen vacancies (V_O) in single oxide layers by varying the electric field can result in significant modulation of the ground state. However, in many oxide multilayers with strong application potentials, e.g. ferroelectric tunnel junctions and solid-oxide fuel cells, understanding V_O behaviour in various layers under an applied electric field remains a challenge, owing to complex V_O transport between different layers. By swee** the external voltage, a reversible manipulation of V_O and a corresponding fixed magnetic phase transition sequence in cobaltite/manganite (SrCoO3-x/La0.45Sr0.55MnO3-y) heterostructures are reported. The magnetic phase transition sequence confirms that the priority of electric-field-induced V_O formation/annihilation in the complex bilayer system is mainly determined by the V_O formation energies and Gibbs free energy differences, which is supported by theoretical analysis. We not only realize a reversible manipulation of the magnetic phase transition in an oxide bilayer, but also provide insight into the electric field control of V_O engineering in heterostructures. △ Less

Submitted 31 October, 2017; originally announced December 2017.

Comments: 30 pages, 7 figures

Journal ref: Phys. Rev. Appl. 8, 044007 (2017)

Tunneling anisotropic magnetoresistance driven by magnetic phase transition

Authors: X. Z. Chen, J. F. Feng, Z. C. Wang, J. Zhang, X. Y. Zhong, C. Song, L. **, B. Zhang, F. Li, M. Jiang, Y. Z. Tan, X. J. Zhou, G. Y. Shi, X. F. Zhou, X. D. Han, S. C. Mao, Y. H. Chen, X. F. Han, F. Pan

Abstract: The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here we report an alternative approach to o… ▽ More The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in alfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one alfa-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the alfa-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics. △ Less

Submitted 21 June, 2017; originally announced June 2017.

Comments: 25 pages, 5 figures, accepted by Nature Communications

Organic-inorganic Copper(II)-based Material: a Low-Toxic, Highly Stable Light Absorber beyond Organolead Perovskites

Authors: Xiaolei Li, Xiangli Zhong, Yue Hu, Bochao Li, Yusong Sheng, Yang Zhang, Chao Weng, Ming Feng, Hongwei Han, **bin Wang

Abstract: Lead halide perovskite solar cells have recently emerged as a very promising photovoltaic technology due to their excellent power conversion efficiencies; however, the toxicity of lead and the poor stability of perovskite materials remain two main challenges that need to be addressed. Here, for the first time, we report a lead-free, highly stable C6H4NH2CuBr2I compound. The C6H4NH2CuBr2I films exh… ▽ More Lead halide perovskite solar cells have recently emerged as a very promising photovoltaic technology due to their excellent power conversion efficiencies; however, the toxicity of lead and the poor stability of perovskite materials remain two main challenges that need to be addressed. Here, for the first time, we report a lead-free, highly stable C6H4NH2CuBr2I compound. The C6H4NH2CuBr2I films exhibit extraordinary hydrophobic behavior with a contact angle of approximately 90 degree, and their X-ray diffraction patterns remain unchanged even after four hours of water immersion. UV-Vis absorption spectrum shows that C6H4NH2CuBr2I compound has an excellent optical absorption over the entire visible spectrum. We applied this copper-based light absorber in printable mesoscopic solar cell for the initial trial and achieved a power conversion efficiency of 0.5%. Our study represents an alternative pathway to develop low-toxic and highly stable organic-inorganic hybrid materials for photovoltaic application. △ Less

Submitted 8 March, 2017; v1 submitted 7 March, 2017; originally announced March 2017.

Comments: This paper has been withdrawn by the author due to some additional characterization of the materials and devices need to be added

Guiding microscale swimmers using teardrop-shaped posts

Authors: Megan S. Davies Wykes, Xiao Zhong, Jiajun Tong, Takuji Adachi, Yanpeng Liu, Leif Ristroph, Michael D. Ward, Michael J. Shelley, Jun Zhang

Abstract: The swimming direction of biological or artificial microscale swimmers tends to be randomised over long time-scales by thermal fluctuations. Bacteria use various strategies to bias swimming behaviour and achieve directed motion against a flow, maintain alignment with gravity or travel up a chemical gradient. Herein, we explore a purely geometric means of biasing the motion of artificial nanorod sw… ▽ More The swimming direction of biological or artificial microscale swimmers tends to be randomised over long time-scales by thermal fluctuations. Bacteria use various strategies to bias swimming behaviour and achieve directed motion against a flow, maintain alignment with gravity or travel up a chemical gradient. Herein, we explore a purely geometric means of biasing the motion of artificial nanorod swimmers. These artificial swimmers are bimetallic rods, powered by a chemical fuel, which swim on a substrate printed with teardrop-shaped posts. The artificial swimmers are hydrodynamically attracted to the posts, swimming alongside the post perimeter for long times before leaving. The rods experience a higher rate of departure from the higher curvature end of the teardrop shape, thereby introducing a bias into their motion. This bias increases with swimming speed and can be translated into a macroscopic directional motion over long times by using arrays of teardrop-shaped posts aligned along a single direction. This method provides a protocol for concentrating swimmers, sorting swimmers according to different speeds, and could enable artificial swimmers to transport cargo to desired locations. △ Less

Submitted 6 April, 2017; v1 submitted 29 January, 2017; originally announced January 2017.

Oxygen modulated quantum conductance for ultra-thin HfO$_2$-based memristive switching devices

Authors: Xiaoliang Zhong, Ivan Rungger, Peter Zapol, Olle Heinonen

Abstract: Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and subsequent non-integer conductance (in terms of conductance quantum $G_0$). We have performed calculations based on density functional theory to model the switching process for a Pt-HfO$_2$-Pt structure, involving the m… ▽ More Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and subsequent non-integer conductance (in terms of conductance quantum $G_0$). We have performed calculations based on density functional theory to model the switching process for a Pt-HfO$_2$-Pt structure, involving the movement of one or two oxygen atoms. Oxygen atoms moving within a conductive oxygen vacancy filament act as tunneling barriers, and partition the filament into weakly coupled quantum wells. We show that the low-bias conductance decreases exponentially when one oxygen atom moves away from interface. Our results demonstrate the high sensitivity of the device conductance to the position of oxygen atoms. △ Less

Submitted 26 July, 2016; originally announced July 2016.

Franck-Condon Blockade in a Single-Molecule Transistor

Authors: E. Burzurí, Y. Yamamoto, M. Warnock, X. Zhong, K. Park, A. Cornia, H. S. J. van der Zant

Abstract: We investigate vibron-assisted electron transport in single-molecule transistors containing an individual Fe4 Single-Molecule Magnet. We observe a strong suppression of the tunneling current at low bias in combination with vibron-assisted excitations. The observed features are explained by a strong electron-vibron coupling in the framework of the Franck-Condon model supported by density-functional… ▽ More We investigate vibron-assisted electron transport in single-molecule transistors containing an individual Fe4 Single-Molecule Magnet. We observe a strong suppression of the tunneling current at low bias in combination with vibron-assisted excitations. The observed features are explained by a strong electron-vibron coupling in the framework of the Franck-Condon model supported by density-functional theory. △ Less

Submitted 8 June, 2016; originally announced June 2016.

Journal ref: Nano Lett. (2014) 14 (6), 3191-3196

Quantum Monte Carlo analysis of a charge ordered insulating antiferromagnet: the Ti$_4$O$_7$ Magnéli phase

Authors: Anouar Benali, Luke Shulenburger, Jaron T. Krogel, Xiaoliang Zhong, Paul R. C. Kent, Olle Heinonen

Abstract: The Magnéli phase Ti$_4$O$_7$ is an important transition metal oxide with a wide range of applications because of its interplay between charge, spin, and lattice degrees of freedom. At low temperatures, it has non-trivial magnetic states very close in energy, driven by electronic exchange and correlation interactions. We have examined three low-lying states, one ferromagnetic and two antiferromagn… ▽ More The Magnéli phase Ti$_4$O$_7$ is an important transition metal oxide with a wide range of applications because of its interplay between charge, spin, and lattice degrees of freedom. At low temperatures, it has non-trivial magnetic states very close in energy, driven by electronic exchange and correlation interactions. We have examined three low-lying states, one ferromagnetic and two antiferromagnetic, and calculated their energies as well as Ti spin moment distributions using highly accurate Quantum Monte Carlo methods. We compare our results to those obtained from density functional theory-based methods that include approximate corrections for exchange and correlation. Our results confirm the nature of the states and their ordering in energy, as compared with density-functional theory methods. However, the energy differences and spin distributions differ. A detailed analysis suggests that non-local exchange-correlation functionals, in addition to other approximations such as LDA+U to account for correlations, are needed to simultaneously obtain better estimates for spin moments, distributions, energy differences and energy gaps. △ Less

Submitted 7 June, 2016; v1 submitted 30 March, 2016; originally announced March 2016.

Comments: Accepter for publication, Physical Chemistry Chemical Physics 2016

The effect of Ta oxygen scavenger layer on HfO$_2$-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport

Authors: X. Zhong, I. Rungger, P. Zapol, H. Nakamura, Y. Asai, O. Heinonen

Abstract: Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access memories. While recent experimental work has shown that inserting a metallic "oxygen scavenger layer" between the positive electrode and oxide improves device performance, the fundamental understanding of how the scaven… ▽ More Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access memories. While recent experimental work has shown that inserting a metallic "oxygen scavenger layer" between the positive electrode and oxide improves device performance, the fundamental understanding of how the scavenger layer modifies heterostructure properties is lacking. We use density functional theory to calculate thermodynamic properties and conductance of TiN/HfO$_2$/TiN heterostructures with and without Ta scavenger layer. First, we show that Ta insertion lowers the formation energy of low-resistance states. Second, while the Ta scavenger layer reduces the Schottky barrier height in the high-resistance state by modifying the interface charge at the oxide-electrode interface, the heterostructure maintains a high resistance ratio between high- and low-resistance states. Finally, we show that the low-bias conductance of device on-states becomes much less sensitive to the spatial distribution of oxygen removed from the HfO$_2$ in the presence of the Ta layer. By providing fundamental understanding of the observed improvements with scavenger layers, we open a path to engineer interfaces with oxygen scavenger layers to control and enhance device performance. In turn, this may enable the realization of a non-volatile low-power memory technology with concomitant reduction in energy consumption by consumer electronics and significant benefits to society. △ Less

Submitted 22 February, 2016; originally announced February 2016.

Comments: 9 pages, 10 figures

Dynamic self-assembly of microscale rotors and swimmers

Authors: Megan S. Davies Wykes, Jeremie Palacci, Takuji Adachi, Leif Ristroph, Xiao Zhong, Michael D. Ward, Jun Zhang, Michael J. Shelley

Abstract: Biological systems often involve the self-assembly of basic components into complex and function- ing structures. Artificial systems that mimic such processes can provide a well-controlled setting to explore the principles involved and also synthesize useful micromachines. Our experiments show that immotile, but active, components self-assemble into two types of structure that exhibit the fundamen… ▽ More Biological systems often involve the self-assembly of basic components into complex and function- ing structures. Artificial systems that mimic such processes can provide a well-controlled setting to explore the principles involved and also synthesize useful micromachines. Our experiments show that immotile, but active, components self-assemble into two types of structure that exhibit the fundamental forms of motility: translation and rotation. Specifically, micron-scale metallic rods are designed to induce extensile surface flows in the presence of a chemical fuel; these rods interact with each other and pair up to form either a swimmer or a rotor. Such pairs can transition reversibly be- tween these two configurations, leading to kinetics reminiscent of bacterial run-and-tumble motion. △ Less

Submitted 1 December, 2015; v1 submitted 21 September, 2015; originally announced September 2015.

Comments: 5 pages, 5 figures

Tellurium Hydrides at High Pressures: High-temperature Superconductors

Authors: Xin Zhong, Hui Wang, Jurong Zhang, Hanyu Liu, Shoutao Zhang, Hai-Feng Song, Guochun Yang, Lijun Zhang, Yanming Ma

Abstract: Observation of high-temperature superconductivity in sulfur hydrides at megabar pressures has generated an irresistible wave on searching for new superconductors in other compressed hydrogen-rich compounds. An immediate effort is towards exploration of the relevant candidate of tellurium hydrides, where tellurium is isoelectronic to sulfur but it has a heavier atomic mass and much weaker electrone… ▽ More Observation of high-temperature superconductivity in sulfur hydrides at megabar pressures has generated an irresistible wave on searching for new superconductors in other compressed hydrogen-rich compounds. An immediate effort is towards exploration of the relevant candidate of tellurium hydrides, where tellurium is isoelectronic to sulfur but it has a heavier atomic mass and much weaker electronegativity. The hitherto unknown phase diagram of tellurium hydrides at high pressures was investigated by a first-principles swarm structure search. Four energetically stable and metallic stoichiometries of H4Te, H5Te2, HTe and HTe3 were uncovered above 140 GPa, showing a distinct potential energy map of tellurium hydrides from those in sulfur and selenium hydrides. The two hydrogen-rich H4Te and H5Te2 species adopt ionic structures containing exotic quasi-molecular H2 and linear H3 units, respectively. Strong electron-phonon couplings associated with the intermediate-frequency H-derived wagging and bending modes make them good superconductors with high Tc in the range of 46-104 K. △ Less

Submitted 15 April, 2015; v1 submitted 1 March, 2015; originally announced March 2015.

Comments: 6 pages, 4 figures plus Supplemental materials. arXiv admin note: text overlap with arXiv:1502.02607

Journal ref: Phys. Rev. Lett. 116, 057002 (2016)

Phase Diagram and High-Temperature Superconductivity of Compressed Selenium Hydrides

Authors: Shoutao Zhang, Yanchao Wang, Jurong Zhang, Hanyu Liu, Xin Zhong, Hai-Feng Song, Guochun Yang, Lijun Zhang, Yanming Ma

Abstract: Recent discovery of high-temperature superconductivity (Tc = 190 K) in sulfur hydrides at megabar pressures breaks the traditional belief on the Tc limit of 40 K for conventional superconductors, and open up the doors in searching new high-temperature superconductors in compounds made up of light elements. Selenium is a sister and isoelectronic element of sulfur, with a larger atomic core and a we… ▽ More Recent discovery of high-temperature superconductivity (Tc = 190 K) in sulfur hydrides at megabar pressures breaks the traditional belief on the Tc limit of 40 K for conventional superconductors, and open up the doors in searching new high-temperature superconductors in compounds made up of light elements. Selenium is a sister and isoelectronic element of sulfur, with a larger atomic core and a weaker electronegativity. Whether selenium hydrides share similar high-temperature superconductivity remains elusive, but it is a subject of considerable interest. First-principles swarm structure predictions are performed in an effort to seek for energetically stable and metallic selenium hydrides at high pressures. We find the phase diagram of selenium hydrides is rather different from its sulfur analogy, which is indicates by the emergence of new phases and the change of relative stabilities. Three stable and metallic species with stoichiometries of HSe2, HSe and H3Se are identified above ~120 GPa and they all exhibit superconductive behaviors, of which the hydrogen-rich HSe and H3Se phases show high Tc in the range of 40-110 K. Our simulations established the high-temperature superconductive nature of selenium hydrides and provided useful route for experimental verification. △ Less

Submitted 14 May, 2015; v1 submitted 9 February, 2015; originally announced February 2015.

Comments: 16 pages, 4 figures plus Supplemental materials

Journal ref: Sci. Rep. 5, 15433 (2015)

Electronic and magnetic properties of Ti4O7 predicted by self-interaction corrected density functional theory

Authors: Xiaoliang Zhong, Ivan Rungger, Peter Zapol, Olle Heinonen

Abstract: Understanding electronic properties of sub-stoichiometric phases of titanium oxide such as Magnéli phase Ti4O7 is crucial in designing and modeling resistive switching devices. Here we present our study on Magnéli phase Ti4O7 together with rutile TiO2 and Ti2O3 using density functional theory methods with atomic-orbital-based self-interaction correction (ASIC). We predict a new antiferromagnetic g… ▽ More Understanding electronic properties of sub-stoichiometric phases of titanium oxide such as Magnéli phase Ti4O7 is crucial in designing and modeling resistive switching devices. Here we present our study on Magnéli phase Ti4O7 together with rutile TiO2 and Ti2O3 using density functional theory methods with atomic-orbital-based self-interaction correction (ASIC). We predict a new antiferromagnetic ground state in the low temperature phase (or LT phase), and we explain energy difference with a competing antiferromagnetic state using a Heisenberg model. The predicted energy ordering of these states in the LT phase is calculated to be robust in a wide range of modeled isotropic strain. We have also investigated the dependence of the electronic structures of the Ti-O phases on stoichiometry. The splitting of titanium t2g orbitals is enhanced with increasing oxygen deficiency as Ti-O is reduced. The electronic properties of all these phases can be reasonably well described by applying ASIC with a standard value for transition metal oxides of the empirical parameter α of 0.5 representing the magnitude of the applied self-interaction correction. △ Less

Submitted 26 February, 2015; v1 submitted 18 September, 2014; originally announced September 2014.

Cross-spectrum Analyzer for Low Frequency Noise Analysis

Authors: Xing Zhong, Sahar Keshavarz, Josh Jones, Claudia Mewes, Patrick R. LeClair

Abstract: The design and performance of a sensitive and reliable cross-correlation spectrum analyzer for studying low frequency transport noise is described in detail. The design makes use of common PC-based data acquisition hardware and preamplifiers to acquire time-based data, along with software we have developed to compute the cross-correlation and noise spectral density. The impedance of device under t… ▽ More The design and performance of a sensitive and reliable cross-correlation spectrum analyzer for studying low frequency transport noise is described in detail. The design makes use of common PC-based data acquisition hardware and preamplifiers to acquire time-based data, along with software we have developed to compute the cross-correlation and noise spectral density. The impedance of device under test may cover four decades from ${100\,Ω}$ to ${1\,{\mathrm{M}Ω}}$. By utilizing a custom developed signal processing program, this system is tested to be accurate and efficient for measuring voltage noise as low as $\sim\!10^{-19}\,\mathrm{V}^2/\mathrm{Hz}$ from ${0.001\,}$Hz to ${100\,}$kHz within one day's averaging time, comparable with more expensive hardware solutions (bandwidth in real measurements may be limited by the sample impedance and stray capacitance). The time dependence of measurement sensitivity is discussed theoretically and characterized experimentally to optimize between measuring time and accuracy. A routine for noise component analysis is introduced, and is applied for characterizing the noise spectra of metal and carbon film resistors, revealing an almost strict $1/$frequency dependence that may reflect an ensemble of random resistivity fluctuation processes with uniformly distributed activation energies. These results verify the general applicability of this analyzer for low level noise researches. △ Less

Submitted 11 August, 2014; originally announced August 2014.

Comments: 10 pages, 13 figures

Systematic enumeration of crystalline networks with only sp2 configuration in cubic lattices

Authors: Chaoyu He, L. Z. Sun, C. X. Zhang, J. X. Zhong

Abstract: Systematic enumeration of crystalline networks with some special topological characters is of considerable interest in both mathematics and crystallography. Based on the restriction of lattice in cubic and inequivalent nodes not exceeding three, a simple method is proposed for systematic searching for three-dimensional crystalline networks with only sp2-configuration nodes (C-sp2-TDTCNs). We syste… ▽ More Systematic enumeration of crystalline networks with some special topological characters is of considerable interest in both mathematics and crystallography. Based on the restriction of lattice in cubic and inequivalent nodes not exceeding three, a simple method is proposed for systematic searching for three-dimensional crystalline networks with only sp2-configuration nodes (C-sp2-TDTCNs). We systematically scan the cubic space groups from No.195 to No.230 and find many C-sp2-TDTCNs including all the previously proposed cubic ones. These C-sp2-TDTCNs are topologically intriguing and can be considered as good templates for searching carbon crystals with novel properties, predicting high pressure phases of element nitrogen and designing three-dimensional hydrocarbon crystals. Structure optimizations are considered by regrading these C-sp2-TDTCNs as carbon crystals and the corresponding energetic stability of these carbon crystals are evaluated, using the the density functional theory (DFT) based first-principle calculations. Our results are of wide interests in mathematics, condensed physics, crystallography and material science. △ Less

Submitted 26 February, 2013; originally announced February 2013.

Comments: 7 pages, 2 figures and 2 tables in the main text. We also provide a Supplementary Information including 4 figures and 3 tables

Two semiconducting three-dimensional all-sp2 carbon allotropes

Authors: Chaoyu He, L. Z. Sun, C. X. Zhang, J. X. Zhong

Abstract: Using first-principles method, we investigate the energetic stability, dynamic stability and electronic properties of two three-dimensional (3D) all-sp2 carbon allotropes, sp2-diamond and cubic-graphite. The cubic-graphite was predicted by Michael O'Keeffe in 1992 (Phys. Rev. Lett., 68, 15, 1992.) possessing space group of Pn-3m (224), whereas the sp2-diamond with the space group Fd-3m (227) same… ▽ More Using first-principles method, we investigate the energetic stability, dynamic stability and electronic properties of two three-dimensional (3D) all-sp2 carbon allotropes, sp2-diamond and cubic-graphite. The cubic-graphite was predicted by Michael O'Keeffe in 1992 (Phys. Rev. Lett., 68, 15, 1992.) possessing space group of Pn-3m (224), whereas the sp2-diamond with the space group Fd-3m (227) same as that of diamond has not been reported before. Our results indicate that sp2-diamond is more stable than previously proposed K4-carbon and T-carbon, and cubic-graphite is even more stable than superhard M-carbon, W-carbon and Z-carbon.The calculations on vibrational properties show that both structures are dynamically stable. Interestingly, both sp2-diamond and cubic-graphite behave as semiconductors which are contrary to previously proposed all-sp2 carbon allotropes. The sp2-diamond is a semiconductor with a direct band gap of 1.66 eV, and cubic-graphite is an indirect semiconductor with band gap of 2.89 eV. The very lower densities and entirely sp2 configures of sp2-diamond and cubic-graphite can be potentially applied in hydrogen-storage, photocatalysts and molecular sieves. △ Less

Submitted 30 June, 2012; originally announced July 2012.

Comments: 5 pages, 5 figures

First-principles study of native point defects in Bi2Se3

Authors: L. Xue, P. Zhou, C. X. Zhang, C. Y. He, G. L. Hao, L. Z. Sun, J. X. Zhong

Abstract: Using first-principles method within the framework of the density functional theory, we study the influence of native point defect on the structural and electronic properties of Bi$_2$Se$_3$. Se vacancy in Bi$_2$Se$_3$ is a double donor, and Bi vacancy is a triple acceptor. Se antisite (Se$_{Bi}$) is always an active donor in the system because its donor level ($\varepsilon$(+1/0)) enters into the… ▽ More Using first-principles method within the framework of the density functional theory, we study the influence of native point defect on the structural and electronic properties of Bi$_2$Se$_3$. Se vacancy in Bi$_2$Se$_3$ is a double donor, and Bi vacancy is a triple acceptor. Se antisite (Se$_{Bi}$) is always an active donor in the system because its donor level ($\varepsilon$(+1/0)) enters into the conduction band. Interestingly, Bi antisite(Bi$_{Se1}$) in Bi$_2$Se$_3$ is an amphoteric dopant, acting as a donor when $μ$$_e$$<$0.119eV (the material is typical p-type) and as an acceptor when $μ$$_e$$>$0.251eV (the material is typical n-type). The formation energies under different growth environments (such as Bi-rich or Se-rich) indicate that under Se-rich condition, Se$_{Bi}$ is the most stable native defect independent of electron chemical potential $μ$$_e$. Under Bi-rich condition, Se vacancy is the most stable native defect except for under the growth window as $μ$$_e$$>$0.262eV (the material is typical n-type) and $Δ$$μ$$_{Se}$$<$-0.459eV(Bi-rich), under such growth windows one negative charged Bi$_{Se1}$ is the most stable one. △ Less

Submitted 30 June, 2012; originally announced July 2012.

Comments: 7 pages, 4 figures

Diamondoid Structure of Polymeric Nitrogen at High Pressures

Authors: Xiaoli Wang, Yanchao Wang, Maosheng Miao, Xin Zhong, Jian Lv, Jianfu Li, Li Chen, Chris J. Pickard, Yanming Ma

Abstract: High-pressure polymeric structures of nitrogen have attracted great attention owing to their potential application as high-energy-density materials. We report the density functional structural prediction of the unexpected stabilization of a diamondoid (or N10-cage) structure of polymeric nitrogen at high pressures. The structure adopts a highly symmetric body-centered cubic form with lattice sites… ▽ More High-pressure polymeric structures of nitrogen have attracted great attention owing to their potential application as high-energy-density materials. We report the density functional structural prediction of the unexpected stabilization of a diamondoid (or N10-cage) structure of polymeric nitrogen at high pressures. The structure adopts a highly symmetric body-centered cubic form with lattice sites occupied by N10 tetracyclic cages, each of which consists of 10 atoms and is covalently bonded with its six next-nearest N10 cages. The prediction of this diamondoid structure rules out the earlier proposed helical tunnel phase and demonstrates the high-order nature of polymeric nitrogen at extreme high pressures. Diamondoid nitrogen is a wide-gap insulator and energetically more favorable than the experimental cubic gauche and previously predicted layered Pba2 phases above 263 GPa, a pressure which is accessible to high pressure experiment. △ Less

Submitted 25 June, 2012; originally announced June 2012.

Comments: 16 pages, 4 figures

Effect of Electric Field on the Band Structure of Graphene/BN and BN/BN Bilayers

Authors: Radhakrishnan Balu, Xiaoliang Zhong, Ravindra Pandey, Shashi P. Karna

Abstract: Effect of electric field on the band structures of graphene/BN and BN/BN bilayers is investigated within the framework of density functional theory. A relatively large degree of modulation is predicted for the graphene/BN bilayer. The calculated band gap of the graphene/BN bilayer increases with applied electric field, which is not the case of BN/BN bilayer; its band gap decreases with the applied… ▽ More Effect of electric field on the band structures of graphene/BN and BN/BN bilayers is investigated within the framework of density functional theory. A relatively large degree of modulation is predicted for the graphene/BN bilayer. The calculated band gap of the graphene/BN bilayer increases with applied electric field, which is not the case of BN/BN bilayer; its band gap decreases with the applied field. Both features in the bilayers considered appear to be related to the nature of the conduction band and the redistribution of the electronic charge of the bilayer systems under the influence of electric field △ Less

Submitted 8 August, 2011; originally announced August 2011.

Level-Spacing Distributions of Planar Quasiperiodic Tight-Binding Models

Authors: J. X. Zhong, U. Grimm, R. A. Roemer, M. Schreiber

Abstract: We study the statistical properties of energy spectra of two-dimensional quasiperiodic tight-binding models. We demonstrate that the nearest-neighbor level spacing distributions of these non-random systems are well described by random matrix theory. Properly taking into account the symmetries of models defined on various finite approximants of quasiperiodic tilings, we find that the underlying u… ▽ More We study the statistical properties of energy spectra of two-dimensional quasiperiodic tight-binding models. We demonstrate that the nearest-neighbor level spacing distributions of these non-random systems are well described by random matrix theory. Properly taking into account the symmetries of models defined on various finite approximants of quasiperiodic tilings, we find that the underlying universal level-spacing distribution is given by the Wigner-Dyson distribution of the Gaussian orthogonal random matrix ensemble. Our data allow us to see the differences between the Wigner surmise and the exact level-spacing distribution. In particular, our result differs from the critical level-spacing distribution computed at the metal-insulator transition in the three-dimensional Anderson model of disorder. △ Less

Submitted 1 October, 1997; originally announced October 1997.

Comments: 5 RevTeX pages including 3 EPS figures

Report number: Sfb393/97-21

Journal ref: Phys. Rev. Lett. 80, 3996 (1998)