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Integrating 2D Magnets for Quantum Devices: from Materials and Characterization to Future Technology
Authors:
Han Zhong,
Douglas Z. Plummer,
Pengcheng Lu,
Yang Li,
Polina A. Leger,
Yingying Wu
Abstract:
The unveiling of 2D van der Waals magnetism in 2017 ignited a surge of interest in low-dimensional magnetism. With dimensions reduced, research has delved into facile electric control of 2D magnetism, high-quality heterostructure design, and new device functionality. These atomically thin magnetic materials have spawned a burgeoning field known as 2D spintronics, holding immense promise for future…
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The unveiling of 2D van der Waals magnetism in 2017 ignited a surge of interest in low-dimensional magnetism. With dimensions reduced, research has delved into facile electric control of 2D magnetism, high-quality heterostructure design, and new device functionality. These atomically thin magnetic materials have spawned a burgeoning field known as 2D spintronics, holding immense promise for future quantum technologies. In this review, we comprehensively survey the current advancements in 2D magnet-based quantum devices, accentuating their role in manifesting exotic properties and enabling novel functionalities. Topological states, spin torques, voltage control of magnetic anisotropy, strain engineering, twistronics and designer interface will be discussed. Furthermore, we offer an outlook to guide their development in future CMOS and quantum hardware paradigms.
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Submitted 17 June, 2024;
originally announced June 2024.
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Ultrafast Carrier Relaxation Dynamics in a Nodal-Line Semimetal PtSn$_4$
Authors:
Tianyun Lin,
Yongkang Ju,
Haoyuan Zhong,
Xiangyu Zeng,
Xue Dong,
Changhua Bao,
Hongyun Zhang,
Tian-Long Xia,
Peizhe Tang,
Shuyun Zhou
Abstract:
Topological Dirac nodal-line semimetals host topologically nontrivial electronic structure with nodal-line crossings around the Fermi level, which could affect the photocarrier dynamics and lead to novel relaxation mechanisms. Herein, by using time- and angle-resolved photoemission spectroscopy, we reveal the previously-inaccessible linear dispersions of the bulk conduction bands above the Fermi l…
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Topological Dirac nodal-line semimetals host topologically nontrivial electronic structure with nodal-line crossings around the Fermi level, which could affect the photocarrier dynamics and lead to novel relaxation mechanisms. Herein, by using time- and angle-resolved photoemission spectroscopy, we reveal the previously-inaccessible linear dispersions of the bulk conduction bands above the Fermi level in a Dirac nodal-line semimetal PtSn$_4$, as well as the momentum and temporal evolution of the gapless nodal lines. A surprisingly ultrafast relaxation dynamics within a few hundred femtoseconds is revealed for photoexcited carriers in the nodal line. Theoretical calculations suggest that such ultrafast carrier relaxation is attributed to the multichannel scatterings among the complex metallic bands of PtSn$_4$ via electron-phonon coupling. In addition, a unique dynamic relaxation mechanism contributed by the highly anisotropic Dirac nodal-line electronic structure is also identified. Our work provides a comprehensive understanding of the ultrafast carrier dynamics in a Dirac nodal-line semimetal.
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Submitted 20 May, 2024;
originally announced May 2024.
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Quantum simulation of honeycomb lattice model by high-order moiré pattern
Authors:
Qiang Wan,
Chunlong Wu,
Xun-Jiang Luo,
Shenghao Dai,
Cao Peng,
Renzhe Li,
Shangkun Mo,
Keming Zhao,
Wen-Xuan Qiu,
Hao Zhong,
Yiwei Li,
Chendong Zhang,
Fengcheng Wu,
Nan Xu
Abstract:
Moiré superlattices have become an emergent solid-state platform for simulating quantum lattice models. However, in single moiré device, Hamiltonians parameters like lattice constant, hop** and interaction terms can hardly be manipulated, limiting the controllability and accessibility of moire quantum simulator. Here, by combining angle-resolved photoemission spectroscopy and theoretical analysi…
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Moiré superlattices have become an emergent solid-state platform for simulating quantum lattice models. However, in single moiré device, Hamiltonians parameters like lattice constant, hop** and interaction terms can hardly be manipulated, limiting the controllability and accessibility of moire quantum simulator. Here, by combining angle-resolved photoemission spectroscopy and theoretical analysis, we demonstrate that high-order moiré patterns in graphene-monolayered xenon/krypton heterostructures can simulate honeycomb model in mesoscale, with in-situ tunable Hamiltonians parameters. The length scale of simulated lattice constant can be tuned by annealing processes, which in-situ adjusts intervalley interaction and hop** parameters in the simulated honeycomb lattice. The sign of the lattice constant can be switched by choosing xenon or krypton monolayer deposited on graphene, which controls sublattice degree of freedom and valley arrangment of Dirac fermions. Our work establishes a novel path for experimentally simulating the honeycomb model with tunable parameters by high-order moiré patterns.
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Submitted 18 April, 2024;
originally announced April 2024.
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Hidden charge density wave induced shadow bands and ultrafast dynamics of CuTe investigated using time-resolved ARPES
Authors:
Haoyuan Zhong,
Changhua Bao,
Tianyun Lin,
Fei Wang,
Xuanxi Cai,
Pu Yu,
Shuyun Zhou
Abstract:
Revealing the fine electronic structure is critical for understanding the underlying physics of low-dimensional materials. Angle-resolved photoemission spectroscopy (ARPES) is a powerful experimental technique for map** out the experimental electronic structure. By reducing the photon energy (e.g. to 6 eV) using laser sources, a greatly improved momentum resolution can be achieved, thereby provi…
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Revealing the fine electronic structure is critical for understanding the underlying physics of low-dimensional materials. Angle-resolved photoemission spectroscopy (ARPES) is a powerful experimental technique for map** out the experimental electronic structure. By reducing the photon energy (e.g. to 6 eV) using laser sources, a greatly improved momentum resolution can be achieved, thereby providing opportunities for ``zooming in'' the fine electronic structure and even revealing the previously unresolvable bands near the Brillouin zone center. Here, by using quasi-one-dimensional material CuTe as an example, we demonstrate the unique capability of laser-based ARPES in revealing the fine electronic structures of ``hidden'' charge density wave induced shadow bands near the Brillouin zone center, which are previously unresolvable using synchrotron sources. The observation of the shadow bands reveals the CDW phase from the aspect of band folding, and the unpredicted CDW band hybridization strongly modifies the electronic structure and Fermi surface, which suggests that such hybridization must be taken into account for studying the CDW transition. Moreover, the ultrafast non-equilibrium carrier dynamics are captured by time-resolved ARPES, revealing the relaxation dynamics through electron-phonon scattering. Our work demonstrates the advantages of laser-based ARPES in zooming in the fine electronic structures, as well as capturing the ultrafast dynamics of low-dimensional materials.
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Submitted 8 April, 2024;
originally announced April 2024.
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C-type antiferromagnetic structure of topological semimetal CaMnSb$_2$
Authors:
Bo Li,
Xu-Tao Zeng,
Qianhui Xu,
Fan Yang,
Junsen Xiang,
Hengyang Zhong,
Sihao Deng,
Lunhua He,
Ju** Xu,
Wen Yin,
Xingye Lu,
Huiying Liu,
Xian-Lei Sheng,
Wentao **
Abstract:
Determination of the magnetic structure and confirmation of the presence or absence of inversion ($\mathcal{P}$) and time reversal ($\mathcal{T}$) symmetry is imperative for correctly understanding the topological magnetic materials. Here high-quality single crystals of the layered manganese pnictide CaMnSb$_2$ are synthesized using the self-flux method. De Haas-van Alphen oscillations indicate a…
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Determination of the magnetic structure and confirmation of the presence or absence of inversion ($\mathcal{P}$) and time reversal ($\mathcal{T}$) symmetry is imperative for correctly understanding the topological magnetic materials. Here high-quality single crystals of the layered manganese pnictide CaMnSb$_2$ are synthesized using the self-flux method. De Haas-van Alphen oscillations indicate a nontrivial Berry phase of $\sim$ $π$ and a notably small cyclotron effective mass, supporting the Dirac semimetal nature of CaMnSb$_2$. Neutron diffraction measurements identify a C-type antiferromagnetic (AFM) structure below $T\rm_{N}$ = 303(1) K with the Mn moments aligned along the $a$ axis, which is well supported by the density functional theory (DFT) calculations. The corresponding magnetic space group is $Pn'm'a'$, preserving a $\mathcal{P}\times\mathcal{T}$ symmetry. Adopting the experimentally determined magnetic structure, band crossings near the Y point in momentum space and linear dispersions of the Sb $5p_{y,z}$ bands are revealed by the DFT calculations. Furthermore, our study predicts the possible existence of an intrinsic second-order nonlinear Hall effect in CaMnSb$_2$, offering a promising platform to study the impact of topological properties on nonlinear electrical transports in antiferromagnets.
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Submitted 1 April, 2024;
originally announced April 2024.
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Boson sampling enhanced quantum chemistry
Authors:
Zhong-Xia Shang,
Han-Sen Zhong,
Yu-Kun Zhang,
Cheng-Cheng Yu,
Xiao Yuan,
Chao-Yang Lu,
Jian-Wei Pan,
Ming-Cheng Chen
Abstract:
In this work, we give a hybrid quantum-classical algorithm for solving electronic structure problems of molecules using only linear quantum optical systems. The variational ansatz we proposed is a hybrid of non-interacting Boson dynamics and classical computational chemistry methods, specifically, the Hartree-Fock method and the Configuration Interaction method. The Boson part is built by a linear…
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In this work, we give a hybrid quantum-classical algorithm for solving electronic structure problems of molecules using only linear quantum optical systems. The variational ansatz we proposed is a hybrid of non-interacting Boson dynamics and classical computational chemistry methods, specifically, the Hartree-Fock method and the Configuration Interaction method. The Boson part is built by a linear optical interferometer which is easier to realize compared with the well-known Unitary Coupled Cluster (UCC) ansatz composed of quantum gates in conventional VQE and the classical part is merely classical processing acting on the Hamiltonian. We called such ansatzes Boson Sampling-Classic (BS-C). The appearance of permanents in the Boson part has its physical intuition to provide different kinds of resources from commonly used single-, double-, and higher-excitations in classical methods and the UCC ansatz to exploring chemical quantum states. Such resources can help enhance the accuracy of methods used in the classical parts. We give a scalable hybrid homodyne and photon number measurement procedure for evaluating the energy value which has intrinsic abilities to mitigate photon loss errors and discuss the extra measurement cost induced by the no Pauli exclusion principle for Bosons with its solutions. To demonstrate our proposal, we run numerical experiments on several molecules and obtain their potential energy curves reaching chemical accuracy.
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Submitted 18 April, 2024; v1 submitted 25 March, 2024;
originally announced March 2024.
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Surface region band enhancement in noble gas adsorption assisted ARPES on kagome superconductor RbV3Sb5
Authors:
Cao Peng,
Yiwei Li,
Xu Chen,
Shenghao Dai,
Zewen Wu,
Chunlong Wu,
Qiang Wan,
Keming Zhao,
Renzhe Li,
Shangkun Mo,
Dingkun Qin,
Shuming Yu,
Hao Zhong,
Shengjun Yuan,
Jiangang Guo,
Nan Xu
Abstract:
Electronic states near surface regions can be distinct from bulk states, which are paramount in understanding various physical phenomena occurring at surfaces and in applications in semiconductors, energy, and catalysis. Here, we report an abnormal surface region band enhancement effect in angle-resolved photoemission spectroscopy on kagome superconductor RbV3Sb5, by depositing noble gases with fi…
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Electronic states near surface regions can be distinct from bulk states, which are paramount in understanding various physical phenomena occurring at surfaces and in applications in semiconductors, energy, and catalysis. Here, we report an abnormal surface region band enhancement effect in angle-resolved photoemission spectroscopy on kagome superconductor RbV3Sb5, by depositing noble gases with fine control. In contrast to conventional surface contamination, the intensity of surface region Sb band can be enhanced more than three times with noble gas adsorption. In the meantime, a hole-dope effect is observed for the enhanced surface region band, with other bands hardly changing. The do** effect is more pronounced with heavier noble gases. We propose that noble gas atoms selectively fill into alkali metal vacancy sites on the surface, which improves the surface condition, boosts surface region bands, and effectively dopes it with the Pauli repulsion mechanism. Our results provide a novel and reversible way to improve surface conditions and tune surface region bands by controlled surface noble gas deposition.
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Submitted 17 March, 2024;
originally announced March 2024.
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Superconductivity and metallic behavior in heavily doped bulk single crystal diamond and graphene/diamond heterostructure
Authors:
Shisheng Lin,
Xutao Yu,
Minhui Yang,
Huikai Zhong,
Jiarui Guo
Abstract:
Owing to extremely large band gap of 5.5 eV and high thermal conductivity, diamond is recognized as the most important semiconductor. The superconductivity of polycrystalline diamond has always been reported, but there are also many controversies over the existence of superconductivity in bulk single crystal diamond and it remains a question whether a metallic state exists for such a large band ga…
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Owing to extremely large band gap of 5.5 eV and high thermal conductivity, diamond is recognized as the most important semiconductor. The superconductivity of polycrystalline diamond has always been reported, but there are also many controversies over the existence of superconductivity in bulk single crystal diamond and it remains a question whether a metallic state exists for such a large band gap semiconductor. Herein, we realize a single crystal superconducting diamond with a Hall carrier concentration larger than 3*1020 cm-3 by co-doped of boron and nitrogen. Furthermore, we show that diamond can transform from superconducting to metallic state under similar carrier concentration with tuned carrier mobility degrading from 9.10 cm2 V-1 s-1 or 5.30 cm2 V-1 s-1 to 2.66 cm2 V-1 s-1 or 1.34 cm2 V-1 s-1. Through integrating graphene on a nitrogen and boron heavily co-doped diamond, the monolayer graphene can be superconducting through combining Andreev reflection and exciton mediated superconductivity, which may intrigue more interesting superconducting behavior of diamond heterostructure.
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Submitted 1 March, 2024;
originally announced March 2024.
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Floquet engineering of black phosphorus upon below-gap pum**
Authors:
Shaohua Zhou,
Changhua Bao,
Benshu Fan,
Fei Wang,
Haoyuan Zhong,
Hongyun Zhang,
Peizhe Tang,
Wenhui Duan,
Shuyun Zhou
Abstract:
Time-periodic light field can dress the electronic states and lead to light-induced emergent properties in quantum materials. While below-gap pum** is regarded favorable for Floquet engineering, so far direct experimental evidence of momentum-resolved band renormalization still remains missing. Here, we report experimental evidence of light-induced band renormalization in black phosphorus by pum…
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Time-periodic light field can dress the electronic states and lead to light-induced emergent properties in quantum materials. While below-gap pum** is regarded favorable for Floquet engineering, so far direct experimental evidence of momentum-resolved band renormalization still remains missing. Here, we report experimental evidence of light-induced band renormalization in black phosphorus by pum** at photon energy of 160 meV which is far below the band gap, and the distinction between below-gap pum** and near-resonance pum** is revealed. Our work demonstrates light-induced band engineering upon below-gap pum**, and provides insights for extending Floquet engineering to more quantum materials.
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Submitted 20 September, 2023;
originally announced September 2023.
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Idealizing Tauc Plot for Accurate Bandgap Determination of Semiconductor with UV-Vis: A Case Study for Cubic Boron Arsenide
Authors:
Hong Zhong,
Fengjiao Pan,
Shuai Yue,
Chengzhen Qin,
Viktor Hadjiev,
Fei Tian,
Xinfeng Liu,
Feng Lin,
Zhiming Wang,
Zhifeng Ren,
Jiming Bao
Abstract:
The Tauc plot method is widely used to determine the bandgap of semiconductors via UV-visible optical spectroscopy due to its simplicity and perceived accuracy. However, the actual Tauc plot often exhibits significant baseline absorption below the expected bandgap, leading to discrepancies in the calculated bandgap depending on whether the linear fit is extrapolated to zero or non-zero baseline. I…
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The Tauc plot method is widely used to determine the bandgap of semiconductors via UV-visible optical spectroscopy due to its simplicity and perceived accuracy. However, the actual Tauc plot often exhibits significant baseline absorption below the expected bandgap, leading to discrepancies in the calculated bandgap depending on whether the linear fit is extrapolated to zero or non-zero baseline. In this study, we show that both extrapolation methods can produce significant errors by simulating Tauc plots with varying levels of baseline absorption. To address this issue, we propose a new method that involves idealizing the absorption spectrum by removing its baseline before constructing the Tauc plot. Experimental verification of this method using a gallium phosphide (GaP) wafer with intentionally introduced baseline absorptions shows promising results. Furthermore, we apply this new method to cubic boron arsenide (c-BAs) and resolve discrepancies in c-BAs bandgap values reported by different groups, obtaining a converging bandgap of 1.835 eV based on both previous and new transmission spectra. The method is applicable to both indirect and direct bandgap semiconductors, regardless of whether the absorption spectrum is measured via transmission or diffuse reflectance, will become essential to obtain accurate values of their bandgaps.
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Submitted 12 June, 2023;
originally announced July 2023.
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Revealing the two-dimensional electronic structure and anisotropic superconductivity in a natural van der Waals superlattice (PbSe)$_{1.14}$NbSe$_2$
Authors:
Haoyuan Zhong,
Hongyun Zhang,
Haoxiong Zhang,
Ting Bao,
Kenan Zhang,
Shengnan Xu,
Laipeng Luo,
Awabaikeli Rousuli,
Wei Yao,
Jonathan D. Denlinger,
Yaobo Huang,
Yang Wu,
Yong Xu,
Wenhui Duan,
Shuyun Zhou
Abstract:
Van der Waals superlattices are important for tailoring the electronic structures and properties of layered materials. Here we report the superconducting properties and electronic structure of a natural van der Waals superlattice (PbSe)$_{1.14}$NbSe$_2$. Anisotropic superconductivity with a transition temperature $T_c$ = 5.6 $\pm$ 0.1 K, which is higher than monolayer NbSe$_2$, is revealed by tran…
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Van der Waals superlattices are important for tailoring the electronic structures and properties of layered materials. Here we report the superconducting properties and electronic structure of a natural van der Waals superlattice (PbSe)$_{1.14}$NbSe$_2$. Anisotropic superconductivity with a transition temperature $T_c$ = 5.6 $\pm$ 0.1 K, which is higher than monolayer NbSe$_2$, is revealed by transport measurements on high-quality samples. Angle-resolved photoemission spectroscopy (ARPES) measurements reveal the two-dimensional electronic structure and a charge transfer of 0.43 electrons per NbSe$_2$ unit cell from the blocking PbSe layer. In addition, polarization-dependent ARPES measurements reveal a significant circular dichroism with opposite contrast at K and K' valleys, suggesting a significant spin-orbital coupling and distinct orbital angular momentum. Our work suggests natural van der Waals superlattice as an effective pathway for achieving intriguing properties distinct from both the bulk and monolayer samples.
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Submitted 24 April, 2023;
originally announced April 2023.
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Distinguishing and controlling Mottness in 1T-TaS$_2$ by ultrafast light
Authors:
Changhua Bao,
Haoyuan Zhong,
Fei Wang,
Tianyun Lin,
Haoxiong Zhang,
Zhiyuan Sun,
Wenhui Duan,
Shuyun Zhou
Abstract:
Distinguishing and controlling the extent of Mottness is important for materials where the energy scales of the onsite Coulomb repulsion U and the bandwidth W are comparable. Here we report the ultrafast electronic dynamics of 1T-TaS$_2$ by ultrafast time- and angle-resolved photoemission spectroscopy. A comparison of the electron dynamics for the newly-discovered intermediate phase (I-phase) as w…
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Distinguishing and controlling the extent of Mottness is important for materials where the energy scales of the onsite Coulomb repulsion U and the bandwidth W are comparable. Here we report the ultrafast electronic dynamics of 1T-TaS$_2$ by ultrafast time- and angle-resolved photoemission spectroscopy. A comparison of the electron dynamics for the newly-discovered intermediate phase (I-phase) as well as the low-temperature commensurate charge density wave (C-CDW) phase shows distinctive dynamics. While the I-phase is characterized by an instantaneous response and nearly time-resolution-limited fast relaxation (~200 fs), the C-CDW phase shows a delayed response and a slower relaxation (a few ps). Such distinctive dynamics refect the different relaxation mechanisms and provide nonequilibrium signatures to distinguish the Mott insulating I-phase from the C-CDW band insulating phase. Moreover, a light-induced bandwidth reduction is observed in the C-CDW phase, pushing it toward the Mott insulating phase. Our work demonstrates the power of ultrafast light-matter interaction in both distinguishing and controlling the extent of Mottness on the ultrafast timescale.
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Submitted 3 March, 2023;
originally announced March 2023.
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Metal-bonded perovskite lead hydride with phonon-mediated superconductivity up to 46 K under atmospheric pressure
Authors:
Yong He,
Juan Du,
Shi-ming Liu,
Chong Tian,
Wen-hui Guo,
Min Zhang,
Yao-hui Zhu,
Hong-xia Zhong,
Xinqiang Wang,
Jun-jie Shi
Abstract:
In the search for high-temperature superconductivity in hydrides, a plethora of multi-hydrogen superconductors have been theoretically predicted, and some have been synthesized experimentally under ultrahigh pressures of several hundred GPa. However, the impracticality of these high-pressure methods has been a persistent issue. In response, we propose a new approach to achieve high-temperature sup…
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In the search for high-temperature superconductivity in hydrides, a plethora of multi-hydrogen superconductors have been theoretically predicted, and some have been synthesized experimentally under ultrahigh pressures of several hundred GPa. However, the impracticality of these high-pressure methods has been a persistent issue. In response, we propose a new approach to achieve high-temperature superconductivity under atmospheric pressure by implanting hydrogen into lead to create a stable few-hydrogen metal-bonded perovskite, Pb$_4$H. This approach diverges from the popular design methodology of multi-hydrogen covalent high critical temperature ($T_c$) superconductors under ultrahigh pressure. By solving the anisotropic Migdal-Eliashberg (ME) equations, we demonstrate that perovskite Pb$_4$H is a typical phonon-mediated superconductor with a $T_c$ of 46 K, which is six times higher than that of bulk Pb (7.22 K) and higher than that of MgB$_2$ (39 K). The high $T_c$ can be attributed to the strong electron-phonon coupling (EPC) strength of 2.45, which arises from hydrogen implantation in lead that induces several high-frequency optical phonon modes with a relatively large phonon linewidth resulting from H atom vibration. The metallic-bonding in perovskite Pb$_4$H not only improves the structural stability but also guarantees better ductility than the widely investigated multi-hydrogen, iron-based, and cuprate superconductors. These results suggest that there is potential for the exploration of new high-temperature superconductors under atmospheric pressure and may reignite interest in their experimental synthesis soon.
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Submitted 17 April, 2023; v1 submitted 10 February, 2023;
originally announced February 2023.
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Pseudospin-selective Floquet band engineering in black phosphorus
Authors:
Shaohua Zhou,
Changhua Bao,
Benshu Fan,
Hui Zhou,
Qixuan Gao,
Haoyuan Zhong,
Tianyun Lin,
Hang Liu,
Pu Yu,
Peizhe Tang,
Sheng Meng,
Wenhui Duan,
Shuyun Zhou
Abstract:
Time-periodic light field has emerged as a control knob for manipulating quantum states in solid-state materials, cold atoms and photonic systems via hybridization with photon-dressed Floquet states in the strong coupling limit, dubbed as Floquet engineering. Such interaction leads to tailored properties of quantum materials, for example, modifications of the topological properties of Dirac materi…
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Time-periodic light field has emerged as a control knob for manipulating quantum states in solid-state materials, cold atoms and photonic systems via hybridization with photon-dressed Floquet states in the strong coupling limit, dubbed as Floquet engineering. Such interaction leads to tailored properties of quantum materials, for example, modifications of the topological properties of Dirac materials and modulation of the optical response. Despite extensive research interests over the past decade, there is no experimental evidence of momentum-resolved Floquet band engineering of semiconductors, which is a crucial step to extend Floquet engineering to a wide range of solid-state materials. Here, based on time- and angle-resolved photoemission spectroscopy measurements, we report experimental signatures of Floquet band engineering in a model semiconductor - black phosphorus. Upon near-resonance pum** at photon energy of 340 to 440 meV, a strong band renormalization is observed near the band edges. In particular, light-induced dynamical gap opening is resolved at the resonance points, which emerges simultaneously with the Floquet sidebands. Moreover, the band renormalization shows a strong selection rule favoring pump polarization along the armchair direction, suggesting pseudospin selectivity for the Floquet band engineering as enforced by the lattice symmetry. Our work demonstrates pseudospin-selective Floquet band engineering in black phosphorus, and provides important guiding principles for Floquet engineering of semiconductors.
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Submitted 1 February, 2023;
originally announced February 2023.
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A newly-designed femtosecond KBe$_2$BO$_3$F$_2$ device with pulse duration down to 55 fs for time- and angle-resolved photoemission spectroscopy
Authors:
Haoyuan Zhong,
Changhua Bao,
Tianyun Lin,
Shaohua Zhou,
Shuyun Zhou
Abstract:
Develo** a widely tunable vacuum ultraviolet (VUV) source with sub-100 femtoseconds (fs) pulse duration is critical for ultrafast pump-probe techniques such as time- and angle-resolved photoemission spectroscopy (TrARPES). While a tunable probe source with photon energy of 5.3 - 7.0 eV has been recently implemented for TrARPES by using a KBe$_2$BO$_3$F$_2$ (KBBF) device, the time resolution of 2…
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Develo** a widely tunable vacuum ultraviolet (VUV) source with sub-100 femtoseconds (fs) pulse duration is critical for ultrafast pump-probe techniques such as time- and angle-resolved photoemission spectroscopy (TrARPES). While a tunable probe source with photon energy of 5.3 - 7.0 eV has been recently implemented for TrARPES by using a KBe$_2$BO$_3$F$_2$ (KBBF) device, the time resolution of 280 - 320 fs is still not ideal, which is mainly limited by the duration of the VUV probe pulse generated by the KBBF device. Here, by designing a new KBBF device which is specially optimized for fs applications, an optimum pulse duration of 55 fs is obtained after systematic diagnostics and optimization. More importantly, a high time resolution of 81 - 95 fs is achieved for TrARPES measurements covering the probe photon energy range of 5.3 - 7.0 eV, making it particularly useful for investigating the ultrafast dynamics of quantum materials. Our work extends the application of KBBF device to ultrafast pump-probe techniques with the advantages of both widely tunable VUV source and ultimate time resolution.
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Submitted 1 February, 2023;
originally announced February 2023.
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Quasiparticle band alignment and stacking-independent exciton in MA$_2$Z$_4$ (M = Mo, W, Ti; A= Si, Ge; Z = N, P, As)
Authors:
Hongxia Zhong,
Guangyong Zhang,
Cheng Lu,
Shiyuan Gao
Abstract:
Motivated by the recently synthesized two-dimensional semiconducting MoSi$_2$N$_4$, we systematically investigate the quasiparticle band alignment and exciton in monolayer MA$_2$Z$_4$ (M = Mo, W, Ti; A= Si, Ge; Z = N, P, As) using ab initio GW and Bethe-Salpeter equation calculations. Compared with the results from density functional theory (DFT), our GW calculations reveal substantially more sign…
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Motivated by the recently synthesized two-dimensional semiconducting MoSi$_2$N$_4$, we systematically investigate the quasiparticle band alignment and exciton in monolayer MA$_2$Z$_4$ (M = Mo, W, Ti; A= Si, Ge; Z = N, P, As) using ab initio GW and Bethe-Salpeter equation calculations. Compared with the results from density functional theory (DFT), our GW calculations reveal substantially more significant band gaps and different absolute quasiparticle energy but predict the same types of band alignments.
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Submitted 9 July, 2022;
originally announced July 2022.
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A puzzling insensitivity of magnon spin diffusion to the presence of 180$^\circ$ domain walls in a ferrimagnetic insulator
Authors:
Ruofan Li,
Lauren J. Riddiford,
Yahong Chai,
Minyi Dai,
Hai Zhong,
Bo Li,
Peng Li,
Di Yi,
David A. Broadway,
Adrien E. E. Dubois,
Patrick Maletinsky,
Jiamian Hu,
Yuri Suzuki,
Daniel C. Ralph,
Tianxiang Nan
Abstract:
We present room-temperature measurements of magnon spin diffusion in epitaxial ferrimagnetic insulator MgAl$_{0.5}$Fe$_{1.5}$O$_{4}$ (MAFO) thin films near zero applied magnetic field where the sample forms a multi-domain state. Due to a weak uniaxial magnetic anisotropy, the domains are separated primarily by 180$^\circ$ domain walls. We find, surprisingly, that the presence of the domain walls h…
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We present room-temperature measurements of magnon spin diffusion in epitaxial ferrimagnetic insulator MgAl$_{0.5}$Fe$_{1.5}$O$_{4}$ (MAFO) thin films near zero applied magnetic field where the sample forms a multi-domain state. Due to a weak uniaxial magnetic anisotropy, the domains are separated primarily by 180$^\circ$ domain walls. We find, surprisingly, that the presence of the domain walls has very little effect on the spin diffusion -- nonlocal spin transport signals in the multi-domain state retain at least 95% of the maximum signal strength measured for the spatially-uniform magnetic state, over distances at least five times the typical domain size. This result is in conflict with simple models of interactions between magnons and static domain walls, which predict that the spin polarization carried by the magnons reverses upon passage through a 180$^\circ$ domain wall.
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Submitted 26 April, 2022;
originally announced April 2022.
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Balanced Partial Entanglement and Mixed State Correlations
Authors:
Hugo A. Camargo,
Pratik Nandy,
Qiang Wen,
Haocheng Zhong
Abstract:
Recently in Ref.\cite{Wen:2021qgx}, one of the authors introduced the balanced partial entanglement (BPE), which has been proposed to be dual to the entanglement wedge cross-section (EWCS). In this paper, we explicitly demonstrate that the BPE could be considered as a proper measure of the total intrinsic correlation between two subsystems in a mixed state. The total correlation includes certain c…
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Recently in Ref.\cite{Wen:2021qgx}, one of the authors introduced the balanced partial entanglement (BPE), which has been proposed to be dual to the entanglement wedge cross-section (EWCS). In this paper, we explicitly demonstrate that the BPE could be considered as a proper measure of the total intrinsic correlation between two subsystems in a mixed state. The total correlation includes certain crossing correlations which are minimized on some balance conditions. By constructing a class of purifications from Euclidean path-integrals, we find that the balanced crossing correlations show universality and can be considered as the generalization of the Markov gap for canonical purification. We also test the relation between the BPE and the EWCS in three-dimensional asymptotically flat holography. We find that the balanced crossing correlation vanishes for the field theory invariant under BMS$_3$ symmetry (BMSFT) and dual to the Einstein gravity, indicating the possibility of a perfect Markov recovery. We further elucidate these crossing correlations as a signature of tripartite entanglement and explain their interpretation in both AdS and non-AdS holography.
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Submitted 15 April, 2022; v1 submitted 31 January, 2022;
originally announced January 2022.
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The Growth of Passive Membranes: Evidence from Ti and Like Metals
Authors:
Weiwei Lao,
Qiaojie Luo,
Ying Huang,
Haixu Zhong,
Chaoqian Lou,
Xuliang Deng,
Xiufang Wen,
Xiaodong Li
Abstract:
Current contradictory understanding of passivation comes from overly-complex passive models, defective characterization and misplaced theoretical approaches. From brand-new experimentation, we find that a Ti passive membrane has spatiotemporally-ordered macrostructure. At the start, a thermodynamically-stable chemisorbed Ti-O monolayer is immediately formed to inactivate the outmost Ti atoms and s…
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Current contradictory understanding of passivation comes from overly-complex passive models, defective characterization and misplaced theoretical approaches. From brand-new experimentation, we find that a Ti passive membrane has spatiotemporally-ordered macrostructure. At the start, a thermodynamically-stable chemisorbed Ti-O monolayer is immediately formed to inactivate the outmost Ti atoms and shield direct reaction of environmental oxygens on metallic matrix, and then an underneath TiOx@Ti ceramet-like non-equilibrium gradient oxide layer rapidly forms. The two layers work synergistically to keep the macro-ordered passive membrane growing slowly via non-linear mechanism of incremental oxidation dam**, thus effecting passivation. These findings disprove "the adsorption theory of passivation" and "the theory of passivity film" and inform a new theory we call "passivation theory of incremental oxidation dam**".
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Submitted 13 June, 2024; v1 submitted 30 January, 2022;
originally announced January 2022.
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Population inversion and Dirac fermion cooling in 3D Dirac semimetal Cd$_3$As$_2$
Authors:
Changhua Bao,
Qian Li,
Sheng Xu,
Shaohua Zhou,
Xiang-Yu Zeng,
Haoyuan Zhong,
Qixuan Gao,
Laipeng Luo,
Dong Sun,
Tian-Long Xia,
Shuyun Zhou
Abstract:
Revealing the ultrafast dynamics of three-dimensional (3D) Dirac fermions upon photoexcitation is critical for both fundamental science and device applications. So far, how the cooling of 3D Dirac fermions differs from that of two-dimensional (2D) Dirac fermions and whether there is population inversion are fundamental questions that remain to be answered. Here we reveal the ultrafast dynamics of…
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Revealing the ultrafast dynamics of three-dimensional (3D) Dirac fermions upon photoexcitation is critical for both fundamental science and device applications. So far, how the cooling of 3D Dirac fermions differs from that of two-dimensional (2D) Dirac fermions and whether there is population inversion are fundamental questions that remain to be answered. Here we reveal the ultrafast dynamics of Dirac fermions in a model 3D Dirac semimetal Cd$_3$As$_2$ by ultrafast time- and angle-resolved photoemission spectroscopy (TrARPES) with a tunable probe photon energy from 5.3 - 6.9 eV. The energy- and momentum-resolved relaxation rate shows a linear dependence on the energy, suggesting Dirac fermion cooling through intraband relaxation. Moreover, a population inversion is reported based on the observation of accumulated photoexcited carriers in the conduction band with a lifetime of $τ_n$ = 3.0 ps. Our work provides direct experimental evidence for a long-lived population inversion in a 3D Dirac semimetal, which is in contrast to 2D graphene where the interband relaxation occurs on a much faster timescale.
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Submitted 17 December, 2021;
originally announced December 2021.
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Ultrafast time- and angle-resolved photoemission spectroscopy with widely tunable probe photon energy of 5.3-7.0 eV for investigating dynamics of three-dimensional materials
Authors:
Changhua Bao,
Haoyuan Zhong,
Shaohua Zhou,
Runfa Feng,
Yuan Wang,
Shuyun Zhou
Abstract:
Time- and angle-resolved photoemission spectroscopy (TrARPES) is a powerful technique for capturing the ultrafast dynamics of charge carriers and revealing photo-induced phase transitions in quantum materials. However, the lack of widely tunable probe photon energy, which is critical for accessing the dispersions at different out-of-plane momentum $k_z$ in TrARPES measurements, has hindered the ul…
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Time- and angle-resolved photoemission spectroscopy (TrARPES) is a powerful technique for capturing the ultrafast dynamics of charge carriers and revealing photo-induced phase transitions in quantum materials. However, the lack of widely tunable probe photon energy, which is critical for accessing the dispersions at different out-of-plane momentum $k_z$ in TrARPES measurements, has hindered the ultrafast dynamics investigation of 3D quantum materials such as Dirac or Weyl semimetals. Here we report the development of a TrARPES system with a highly tunable probe photon energy from 5.3 to 7.0 eV. The tunable probe photon energy is generated by the fourth harmonic generation of a tunable wavelength femtosecond laser source by combining a $β$-BaB$_2$O$_4$ (BBO) crystal and a KBe$_2$BO$_3$F$_2$ (KBBF) crystal. High energy resolution of 29 - 48 meV and time resolution of 280 - 320 fs are demonstrated on 3D topological materials ZrTe$_5$ and Sb$_2$Te$_3$. Our work opens up new opportunities for exploring ultrafast dynamics in 3D quantum materials.
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Submitted 17 December, 2021;
originally announced December 2021.
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Uncover band topology via quantized drift in two-dimensional Bloch oscillations
Authors:
Bo Zhu,
Shi Hu,
Honghua Zhong,
Yongguan Ke
Abstract:
We propose to measure band topology via quantized drift of Bloch oscillations in a two-dimensional Harper-Hofstadter lattice subjected to tilted fields in both directions. When the difference between the two tilted fields is large, Bloch oscillations uniformly sample all momenta, and hence the displacement in each direction tends to be quantized at multiples of the overall period, regardless of an…
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We propose to measure band topology via quantized drift of Bloch oscillations in a two-dimensional Harper-Hofstadter lattice subjected to tilted fields in both directions. When the difference between the two tilted fields is large, Bloch oscillations uniformly sample all momenta, and hence the displacement in each direction tends to be quantized at multiples of the overall period, regardless of any momentum of initial state. The quantized displacement is related to a reduced Chern number defined as a line integral of Berry curvature in each direction, providing an almost perfect measurement of Chern number. Our scheme can apply to detect Chern number and topological phase transitions not only for the energy-separable band, but also for energy-inseparable bands which cannot be achieved by conventional Thouless pum** or integer quantum Hall effect.
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Submitted 12 August, 2021;
originally announced August 2021.
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Light-Tunable Surface State and Hybridization Gap in Magnetic Topological Insulator MnBi$_8$Te$_{13}$
Authors:
Haoyuan Zhong,
Changhua Bao,
Huan Wang,
Jiaheng Li,
Zichen Yin,
Yong Xu,
Wenhui Duan,
Tian-Long Xia,
Shuyun Zhou
Abstract:
MnBi$_8$Te$_{13}$ is an intrinsic ferromagnetic (FM) topological insulator with different complex surface terminations. Resolving the electronic structures of different termination surfaces and manipulation of the electronic state are important. Here, by using micrometer spot time- and angle-resolved photoemission spectroscopy ($μ$-TrARPES), we resolve the electronic structures and reveal the ultr…
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MnBi$_8$Te$_{13}$ is an intrinsic ferromagnetic (FM) topological insulator with different complex surface terminations. Resolving the electronic structures of different termination surfaces and manipulation of the electronic state are important. Here, by using micrometer spot time- and angle-resolved photoemission spectroscopy ($μ$-TrARPES), we resolve the electronic structures and reveal the ultrafast dynamics upon photoexcitation. Photoinduced filling of the surface state hybridization gap is observed for the Bi$_2$Te$_3$ quintuple layer directly above MnBi$_2$Te$_4$ accompanied by a nontrivial shift of the surface state, suggesting light-tunable interlayer interaction. Relaxation of photoexcited electrons and holes is observed within 1-2 ps. Our work reveals photoexcitation as a potential control knob for tailoring the interlayer interaction and surface state of MnBi$_8$Te$_{13}$.
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Submitted 3 August, 2021;
originally announced August 2021.
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Quantum interference between independent solid-state single-photon sources separated by 300 km fiber
Authors:
Xiang You,
Ming-Yang Zheng,
Si Chen,
Run-Ze Liu,
Jian Qin,
M. -C. Xu,
Z. -X. Ge,
T. -H. Chung,
Y. -K. Qiao,
Y. -F. Jiang,
H. -S. Zhong,
M. -C. Chen,
H. Wang,
Y. -M. He,
X. -P. Xie,
H. Li,
L. -X. You,
C. Schneider,
J. Yin,
T. -Y. Chen,
M. Benyoucef,
Yong-Heng Huo,
S. Hoefling,
Qiang Zhang,
Chao-Yang Lu
, et al. (1 additional authors not shown)
Abstract:
In the quest to realize a scalable quantum network, semiconductor quantum dots (QDs) offer distinct advantages including high single-photon efficiency and indistinguishability, high repetition rate (tens of GHz with Purcell enhancement), interconnectivity with spin qubits, and a scalable on-chip platform. However, in the past two decades, the visibility of quantum interference between independent…
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In the quest to realize a scalable quantum network, semiconductor quantum dots (QDs) offer distinct advantages including high single-photon efficiency and indistinguishability, high repetition rate (tens of GHz with Purcell enhancement), interconnectivity with spin qubits, and a scalable on-chip platform. However, in the past two decades, the visibility of quantum interference between independent QDs rarely went beyond the classical limit of 50$\%$ and the distances were limited from a few meters to kilometers. Here, we report quantum interference between two single photons from independent QDs separated by 302 km optical fiber. The single photons are generated from resonantly driven single QDs deterministically coupled to microcavities. Quantum frequency conversions are used to eliminate the QD inhomogeneity and shift the emission wavelength to the telecommunication band. The observed interference visibility is 0.67$\pm$0.02 (0.93$\pm$0.04) without (with) temporal filtering. Feasible improvements can further extend the distance to 600 km. Our work represents a key step to long-distance solid-state quantum networks.
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Submitted 29 June, 2021;
originally announced June 2021.
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Electronic properties and quasi-particle model of monolayer MoSi$_2$N$_4$
Authors:
Zhenwei Wang,
Xueheng Kuang,
Guodong Yu,
Peiliang Zhao,
Hongxia Zhong,
Shengjun Yuan
Abstract:
By a combined study with first-principles calculations and symmetry analysis, we theoretically investigate the electronic properties of monolayer MoSi$_2$N$_4$. While the spin-orbital coupling results in bands splitting, the horizontal mirror symmetry locks the spin polarization along z-direction. In addition, a three-band tight-binding model is constructed to describe the low-energy quasi-particl…
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By a combined study with first-principles calculations and symmetry analysis, we theoretically investigate the electronic properties of monolayer MoSi$_2$N$_4$. While the spin-orbital coupling results in bands splitting, the horizontal mirror symmetry locks the spin polarization along z-direction. In addition, a three-band tight-binding model is constructed to describe the low-energy quasi-particle states of monolayer MoSi$_2$N$_4$, which can be generalized to strained MoSi$_2$N$_4$ and its derivatives. The calculations using the tight-binding model show an undamped $\sqrt{q}$-dependent plasmon mode that agrees well with the results of first-principles calculations. Our model can be extended to be suitable for future theoretical and numerical studies of low-energy properties in MoSi$_2$N$_4$ family materials. Furthermore, the study of electronic properties of monolayer MoSi$_2$N$_4$ paves a way for its applications in spintronics and plasmonics.
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Submitted 16 October, 2021; v1 submitted 29 March, 2021;
originally announced March 2021.
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Structure-Composition-Property Relationships in Antiperovskite Nitrides: Guiding a Rational Alloy Design
Authors:
Hongxia Zhong,
Chunbao Feng,
Hai Wang,
Dan Han,
Guodong Yu,
Wenqi Xiong,
Yunhai Li,
Mao Yang,
Gang Tang,
Shengjun Yuan
Abstract:
The alloy strategy through A- or X-site is a common method for experimental preparation of high-performance and stable lead-based perovskite solar cells. As one of the important candidates for lead-free and stable photovoltaic absorber, the inorganic antiperovskite family has recently been reported to exhibit excellent optoelectronic properties. However, the current reports on the design of antipe…
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The alloy strategy through A- or X-site is a common method for experimental preparation of high-performance and stable lead-based perovskite solar cells. As one of the important candidates for lead-free and stable photovoltaic absorber, the inorganic antiperovskite family has recently been reported to exhibit excellent optoelectronic properties. However, the current reports on the design of antiperovskite alloys are rare. In this work, we investigated the previously overlooked electronic property (e.g., conduction band convergence), static dielectric constant, and exciton binding energy in inorganic antiperovskite nitrides by first-principles calculations. Then, we reveal a linear relationship between tolerance factor and various physical quantities. Guided by the established structure-composition-property relationship in six antiperovskite nitrides X3NA (X2+ = Mg2+, Ca2+, Sr2+; A3- = P3-, As3-, Sb3-, Bi3-), for the first time, we design a promising antiperovskite alloy Mg3NAs0.5Bi0.5 with the quasi-direct band gap of 1.402 eV. Finally, we make a comprehensive comparison between antiperovskite nitrides and conventional halide perovskites for pointing out the future direction for device applications.
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Submitted 7 October, 2021; v1 submitted 27 March, 2021;
originally announced March 2021.
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Quantum computational advantage using photons
Authors:
Han-Sen Zhong,
Hui Wang,
Yu-Hao Deng,
Ming-Cheng Chen,
Li-Chao Peng,
Yi-Han Luo,
Jian Qin,
Dian Wu,
Xing Ding,
Yi Hu,
Peng Hu,
Xiao-Yan Yang,
Wei-Jun Zhang,
Hao Li,
Yuxuan Li,
Xiao Jiang,
Lin Gan,
Guangwen Yang,
Lixing You,
Zhen Wang,
Li Li,
Nai-Le Liu,
Chao-Yang Lu,
Jian-Wei Pan
Abstract:
Gaussian boson sampling exploits squeezed states to provide a highly efficient way to demonstrate quantum computational advantage. We perform experiments with 50 input single-mode squeezed states with high indistinguishability and squeezing parameters, which are fed into a 100-mode ultralow-loss interferometer with full connectivity and random transformation, and sampled using 100 high-efficiency…
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Gaussian boson sampling exploits squeezed states to provide a highly efficient way to demonstrate quantum computational advantage. We perform experiments with 50 input single-mode squeezed states with high indistinguishability and squeezing parameters, which are fed into a 100-mode ultralow-loss interferometer with full connectivity and random transformation, and sampled using 100 high-efficiency single-photon detectors. The whole optical set-up is phase-locked to maintain a high coherence between the superposition of all photon number states. We observe up to 76 output photon-clicks, which yield an output state space dimension of $10^{30}$ and a sampling rate that is $10^{14}$ faster than using the state-of-the-art simulation strategy and supercomputers. The obtained samples are validated against various hypotheses including using thermal states, distinguishable photons, and uniform distribution.
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Submitted 2 December, 2020;
originally announced December 2020.
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Strain-induced semiconductor to metal transition in MA2Z4 bilayers
Authors:
Hongxia Zhong,
Wenqi Xiong,
Pengfei Lv,
** Yu,
Shengjun Yuan
Abstract:
Very recently, a new type of two-dimensional layered material MoSi2N4 has been fabricated, which is semiconducting with weak interlayer interaction, high strength, and excellent stability. We systematically investigate theoretically the effect of vertical strain on the electronic structure of MA2Z4 (M=Ti/Cr/Mo, A=Si, Z=N/P) bilayers. Taking bilayer MoSi2N4 as an example, our first principle calcul…
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Very recently, a new type of two-dimensional layered material MoSi2N4 has been fabricated, which is semiconducting with weak interlayer interaction, high strength, and excellent stability. We systematically investigate theoretically the effect of vertical strain on the electronic structure of MA2Z4 (M=Ti/Cr/Mo, A=Si, Z=N/P) bilayers. Taking bilayer MoSi2N4 as an example, our first principle calculations show that its indirect band gap decreases monotonically as the vertical compressive strain increases. Under a critical strain around 22%, it undergoes a transition from semiconductor to metal. We attribute this to the opposite energy shift of states in different layers, which originates from the built-in electric field induced by the asymmetric charge transfer between two inner sublayers near the interface. Similar semiconductor to metal transitions are observed in other strained MA2Z4 bilayers, and the estimated critical pressures to realize such transitions are within the same order as semiconducting transition metal dichalcogenides. The semiconductor to metal transitions observed in the family of MA2Z4 bilayers present interesting possibilities for strain-induced engineering of their electronic properties.
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Submitted 18 September, 2020;
originally announced September 2020.
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Multi-ultraflatbands tunability and effect of spin-orbit coupling in twisted bilayer transition metal dichalcogenides
Authors:
Zhen Zhan,
Yipei Zhang,
Pengfei Lv,
Hongxia Zhong,
Guodong Yu,
Francisco Guinea,
Jose Angel Silva-Guillen,
Shengjun Yuan
Abstract:
Ultraflatbands that have been theoretically and experimentally detected in a bunch of van der Waals stacked materials showing some peculiar properties, for instance, highly localized electronic states and enhanced electron-electron interactions. In this Letter, using an accurate tight-binding model, we study the formation and evolution of ultraflatbands in transition metal dichalcogenides (TMDCs)…
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Ultraflatbands that have been theoretically and experimentally detected in a bunch of van der Waals stacked materials showing some peculiar properties, for instance, highly localized electronic states and enhanced electron-electron interactions. In this Letter, using an accurate tight-binding model, we study the formation and evolution of ultraflatbands in transition metal dichalcogenides (TMDCs) under low rotation angles. We find that, unlike in twisted bilayer graphene, ultraflatbands exist in TMDCs for almost any small twist angles and their wave function becomes more localized when the rotation angle decreases. Lattice relaxation, pressure and local deformation can tune the width of the flatbands, as well as their localization. Furthermore, we investigate the effect of spin-orbit coupling on the flatbands and discover spin/orbital/valley locking at the minimum of the conduction band at the K point of the Brillouin zone. The ultraflatbands found in TMDCs with a range of rotation angle below $7^\circ$, may provide an ideal platform to study strongly correlated states.
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Submitted 10 September, 2020; v1 submitted 28 May, 2020;
originally announced May 2020.
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Floquet-surface bound states in the continuum in a resonantly driven 1D tilted defect-free lattice
Authors:
Bo Zhu,
Yongguan Ke,
Wenjie Liu,
Zheng Zhou,
Honghua Zhong
Abstract:
We study the Floquet-surface bound states embedded in the continuum (BICs) and bound states out the continuum (BOCs)in a resonantly driven 1D tilted defect-free lattice. In contrast to fragile single-particle BICs assisted by specially tailored potentials, we find that Floquet-surface BICs, stable against structural perturbations, can exist in a wide range of parameter space. By using a multiple-t…
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We study the Floquet-surface bound states embedded in the continuum (BICs) and bound states out the continuum (BOCs)in a resonantly driven 1D tilted defect-free lattice. In contrast to fragile single-particle BICs assisted by specially tailored potentials, we find that Floquet-surface BICs, stable against structural perturbations, can exist in a wide range of parameter space. By using a multiple-time-scale asymptotic analysis in the high-frequency limit, the appearance of Floquet-surface bound states can be analytically explained by effective Tamm-type defects at boundaries induced by the resonance between the periodic driving and tilt. The phase boundary of existing Floquet-surface states is also analytically given. Based on the repulsion effect of surface states, we propose to detect transition points and measure the number of Floquet-surface bound states by quantum walk. Our work opens a new door to experimental realization of BICs in quantum system.
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Submitted 17 May, 2020;
originally announced May 2020.
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Flatband Line States in Photonic Super-Honeycomb Lattices
Authors:
Wenchao Yan,
Hua Zhong,
Daohong Song,
Yiqi Zhang,
Shiqi Xia,
Liqin Tang,
Daniel Leykam,
Zhigang Chen
Abstract:
We establish experimentally a photonic super-honeycomb lattice (sHCL) by use of a cw-laser writing technique, and thereby demonstrate two distinct flatband line states that manifest as noncontractible-loop-states in an infinite flatband lattice. These localized states (straight and zigzag lines) observed in the sHCL with tailored boundaries cannot be obtained by superposition of conventional compa…
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We establish experimentally a photonic super-honeycomb lattice (sHCL) by use of a cw-laser writing technique, and thereby demonstrate two distinct flatband line states that manifest as noncontractible-loop-states in an infinite flatband lattice. These localized states (straight and zigzag lines) observed in the sHCL with tailored boundaries cannot be obtained by superposition of conventional compact localized states because they represent a new topological entity in flatband systems. In fact, the zigzag-line states, unique to the sHCL, are in contradistinction with those previously observed in the Kagome and Lieb lattices. Their momentum-space spectrum emerges in the high-order Brillouin zone where the flat band touches the dispersive bands, revealing the characteristic of topologically protected bandcrossing. Our experimental results are corroborated by numerical simulations based on the coupled mode theory. This work may provide insight to Dirac like 2D materials beyond graphene.
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Submitted 29 December, 2019;
originally announced December 2019.
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Electronic and Optical properties of transition metal dichalcogenides under symmetric and asymmetric field-effect do**
Authors:
Peiliang Zhao,
** Yu,
H. Zhong,
Malt. Rosner,
Mikhail I. Katsnelson,
Shengjun Yuan
Abstract:
Do** via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful theoretical treatments. Using semiconducting monolayers of transition metal dichalcogenides (TMDs) as prototypical systems affected by electrostatic gating, we s…
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Do** via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful theoretical treatments. Using semiconducting monolayers of transition metal dichalcogenides (TMDs) as prototypical systems affected by electrostatic gating, we show that the electronic and optical properties change indeed dramatically when the gating geometry is properly taken into account. This effect is implemented by a self-consistent calculation of the Coulomb interaction between the charges in different sub-layers within the tight-binding approximation. Thereby we consider both, single- and double-sided gating. Our results show that, at low do** levels of $10^{13}$ cm$^{-2}$, the electronic bands of monolayer TMDs shift rigidly for both types of gating, and subsequently undergo a Lifshitz transition. When approaching the do** level of $10^{14}$ cm$^{-2}$, the band structure changes dramatically, especially in the case of single-sided gating where we find that monolayer \ce{MoS2} and \ce{WS2} become indirect gap semiconductors. The optical conductivities calculated within linear response theory also show clear signatures of these do**-induced band structure renormalizations. Our numerical results based on light-weighted tight-binding models indicate the importance of electronic screening in doped layered structures, and pave the way for further understanding gated super-lattice structures formed by mutlilayers with extended Moiré pattern.
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Submitted 13 January, 2021; v1 submitted 24 November, 2019;
originally announced November 2019.
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Hot Polarons with Trapped Excitons and Octahedra-Twist Phonons in CH3NH3PbBr3 Hybrid Perovskite Nanowires
Authors:
Feilong Song,
Chenjiang Qian,
Yunuan Wang,
Feng Zhang,
Kai Peng,
Shiyao Wu,
Xin Xie,
**gnan Yang,
Sibai Sun,
Yang Yu,
Jianchen Dang,
Shan Xiao,
Longlong Yang,
Kuijuan **,
Haizheng Zhong,
Xiulai Xu
Abstract:
Hybrid Perovskites have shown a great potential for applications in photovoltaics and light-emitting devices with high efficiency. Interaction between defect-induced trapped excitons and phonons plays an important role in understanding the emerging phenomena for such an excellent figure-of-merit. Here we demonstrate hot polarons with narrow linewidth in $\mathrm{CH_{3}NH_{3}PbBr_{3}}$ nanowires, w…
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Hybrid Perovskites have shown a great potential for applications in photovoltaics and light-emitting devices with high efficiency. Interaction between defect-induced trapped excitons and phonons plays an important role in understanding the emerging phenomena for such an excellent figure-of-merit. Here we demonstrate hot polarons with narrow linewidth in $\mathrm{CH_{3}NH_{3}PbBr_{3}}$ nanowires, which originate from the interaction between trapped excitons and octahedra-twist phonons. The observation of hot polarons in photoluminescence without gain methods indicates the large interaction strength between excitons and phonons. The multiple hot polarons are further confirmed by magneto-optical spectra with a Zeeman splitting of the trapped excitons and a phonon energy increase with diamagnetic effect. Furthermore, the phonons participating in the interaction are demonstrated to be the octahedra-twist vibrations which are transverse optical phonons, while the interaction between trapped excitons and longitudinal optical phonons is weak. Our work demonstrates that trapped excitons in perovskites prefer to interact with transverse rather than longitudinal optical phonons. Since bulk materials usually interact with longitudinal optical phonons, this result provides a physical explanation of the high tolerance of defects in perovskites.
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Submitted 18 November, 2019;
originally announced November 2019.
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Near-Infrared Lead Chalcogenide Quantum Dots: Synthesis and Applications in Light Emitting Diodes
Authors:
Haochen Liu,
Huaying Zhong,
Fankai Zheng,
Yue Xie,
Depeng Li,
Dan Wu,
Ziming Zhou,
Xiao Wei Sun,
Kai Wang
Abstract:
This paper reviews recent progress in the synthesis of near-infrared (NIR) lead chalcogenide (PbX; PbX=PbS, PbSe, PbTe) quantum dots (QDs) and their applications in NIR QDs based light emitting diodes (NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance PbX based NIR-QLEDs.
This paper reviews recent progress in the synthesis of near-infrared (NIR) lead chalcogenide (PbX; PbX=PbS, PbSe, PbTe) quantum dots (QDs) and their applications in NIR QDs based light emitting diodes (NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance PbX based NIR-QLEDs.
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Submitted 25 October, 2019;
originally announced October 2019.
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Tunable magneto-optical properties of single-layer tin diselenide: From GW approximation to large-scale tight-binding calculations
Authors:
Hongxia Zhong,
** Yu,
Kaixiang Huang,
Shengjun Yuan
Abstract:
A parameterized tight-binding (TB) model based on the first-principles GW calculations is developed for single layer tin diselenide (SnSe$_2$) and used to study its electronic and optical properties under external magnetic field. The truncated model is derived from six maximally localized wannier orbitals on Se site, which accurately describes the quasi-particle electronic states of single layer S…
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A parameterized tight-binding (TB) model based on the first-principles GW calculations is developed for single layer tin diselenide (SnSe$_2$) and used to study its electronic and optical properties under external magnetic field. The truncated model is derived from six maximally localized wannier orbitals on Se site, which accurately describes the quasi-particle electronic states of single layer SnSe$_2$ in a wide energy range. The quasi-particle electronic states are dominated by the hop**s between nearest wannier orbitals ($t_1$-$t_6$). Our numerical calculation shows that, due to the electron-hole asymmetry, two sets of Landau Level spectrum are obtained when a perpendicular magnetic field is applied. The Landau Level spectrum follows linear dependence on the level index and magnetic field, exhibiting properties of two-dimensional electron gas in traditional semiconductors. The optical conductivity calculation shows that the optical gap is very close to the GW value, and can be tuned by external magnetic field. Our proposed TB model can be used for further exploring the electronic, optical, and transport properties of SnSe$_2$, especially in the presence of external magnetic fields.
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Submitted 27 July, 2019;
originally announced July 2019.
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Dynamic winding number for exploring band topology
Authors:
Bo Zhu,
Yongguan Ke,
Honghua Zhong,
Chaohong Lee
Abstract:
Topological invariants play a key role in the characterization of topological states. Due to the existence of exceptional points, it is a great challenge to detect topological invariants in non-Hermitian systems. We put forward a dynamic winding number, the winding of realistic observables in long-time average, for exploring band topology in both Hermitian and non-Hermitian two-band models via a u…
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Topological invariants play a key role in the characterization of topological states. Due to the existence of exceptional points, it is a great challenge to detect topological invariants in non-Hermitian systems. We put forward a dynamic winding number, the winding of realistic observables in long-time average, for exploring band topology in both Hermitian and non-Hermitian two-band models via a unified approach. We build a concrete relation between dynamic winding numbers and conventional topological invariants. In one-dimension, the dynamical winding number directly gives the conventional winding number. In two-dimension, the Chern number relates to the weighted sum of dynamic winding numbers of all phase singularity points. This work opens a new avenue to measure topological invariants not requesting any prior knowledge of system topology via time-averaged spin textures.
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Submitted 10 October, 2019; v1 submitted 25 July, 2019;
originally announced July 2019.
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Experimental Gaussian Boson Sampling
Authors:
Han-Sen Zhong,
Li-Chao Peng,
Yuan Li,
Yi Hu,
Wei Li,
Jian Qin,
Dian Wu,
Weijun Zhang,
Hao Li,
Lu Zhang,
Zhen Wang,
Lixing You,
Xiao Jiang,
Li Li,
Nai-Le Liu,
Jonathan P. Dowling,
Chao-Yang Lu,
Jian-Wei Pan
Abstract:
Gaussian Boson sampling (GBS) provides a highly efficient approach to make use of squeezed states from parametric down-conversion to solve a classically hard-to-solve sampling problem. The GBS protocol not only significantly enhances the photon generation probability, compared to standard boson sampling with single photon Fock states, but also links to potential applications such as dense subgraph…
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Gaussian Boson sampling (GBS) provides a highly efficient approach to make use of squeezed states from parametric down-conversion to solve a classically hard-to-solve sampling problem. The GBS protocol not only significantly enhances the photon generation probability, compared to standard boson sampling with single photon Fock states, but also links to potential applications such as dense subgraph problems and molecular vibronic spectra. Here, we report the first experimental demonstration of GBS using squeezed-state sources with simultaneously high photon indistinguishability and collection efficiency. We implement and validate 3-, 4- and 5-photon GBS with high sampling rates of 832 kHz, 163 kHz and 23 kHz, respectively, which is more than 4.4, 12.0, and 29.5 times faster than the previous experiments. Further, we observe a quantum speed-up on a NP-hard optimization problem when comparing with simulated thermal sampler and uniform sampler.
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Submitted 30 April, 2019;
originally announced May 2019.
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On-demand semiconductor source of entangled photons which simultaneously has high fidelity, efficiency, and indistinguishability
Authors:
Hui Wang,
Hai Hu,
T. -H. Chung,
Jian Qin,
Xiaoxia Yang,
J. -P. Li,
R. -Z. Liu,
H. -S. Zhong,
Y. -M. He,
Xing Ding,
Y. -H. Deng,
C. Schneider,
Qing Dai,
Y. -H. Huo,
Sven Höfling,
Chao-Yang Lu,
Jian-Wei Pan
Abstract:
An outstanding goal in quantum optics and scalable photonic quantum technology is to develop a source that each time emits one and only one entangled photon pair with simultaneously high entanglement fidelity, extraction efficiency, and photon indistinguishability. By coherent two-photon excitation of a single InGaAs quantum dot coupled to a circular Bragg grating bullseye cavity with broadband hi…
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An outstanding goal in quantum optics and scalable photonic quantum technology is to develop a source that each time emits one and only one entangled photon pair with simultaneously high entanglement fidelity, extraction efficiency, and photon indistinguishability. By coherent two-photon excitation of a single InGaAs quantum dot coupled to a circular Bragg grating bullseye cavity with broadband high Purcell factor up to 11.3, we generate entangled photon pairs with a state fidelity of 0.90(1), pair generation rate of 0.59(1), pair extraction efficiency of 0.62(6), and photon indistinguishability of 0.90(1) simultaneously. Our work will open up many applications in high-efficiency multi-photon experiments and solid-state quantum repeaters.
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Submitted 14 March, 2019;
originally announced March 2019.
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Extreme Broadband Transparent Optical Phase Change Materials for High-Performance Nonvolatile Photonics
Authors:
Yifei Zhang,
Jeffrey B. Chou,
Junying Li,
Huashan Li,
Qingyang Du,
Anupama Yadav,
Si Zhou,
Mikhail Y. Shalaginov,
Zhuoran Fang,
Huikai Zhong,
Christopher Roberts,
Paul Robinson,
Bridget Bohlin,
Carlos Ríos,
Hongtao Lin,
Myungkoo Kang,
Tian Gu,
Jamie Warner,
Vladimir Liberman,
Kathleen Richardson,
Juejun Hu
Abstract:
Optical phase change materials (O-PCMs), a unique group of materials featuring drastic optical property contrast upon solid-state phase transition, have found widespread adoption in photonic switches and routers, reconfigurable meta-optics, reflective display, and optical neuromorphic computers. Current phase change materials, such as Ge-Sb-Te (GST), exhibit large contrast of both refractive index…
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Optical phase change materials (O-PCMs), a unique group of materials featuring drastic optical property contrast upon solid-state phase transition, have found widespread adoption in photonic switches and routers, reconfigurable meta-optics, reflective display, and optical neuromorphic computers. Current phase change materials, such as Ge-Sb-Te (GST), exhibit large contrast of both refractive index (delta n) and optical loss (delta k), simultaneously. The coupling of both optical properties fundamentally limits the function and performance of many potential applications. In this article, we introduce a new class of O-PCMs, Ge-Sb-Se-Te (GSST) which breaks this traditional coupling, as demonstrated with an optical figure of merit improvement of more than two orders of magnitude. The first-principle computationally optimized alloy, Ge2Sb2Se4Te1, combines broadband low optical loss (1-18.5 micron), large optical contrast (delta n = 2.0), and significantly improved glass forming ability, enabling an entirely new field of infrared and thermal photonic devices. We further leverage the material to demonstrate nonvolatile integrated optical switches with record low loss and large contrast ratio, as well as an electrically addressed, microsecond switched pixel level spatial light modulator, thereby validating its promise as a platform material for scalable nonvolatile photonics.
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Submitted 5 November, 2018; v1 submitted 1 November, 2018;
originally announced November 2018.
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Terahertz Spin Transfer Torque Oscillator Based on a Synthetic Antiferromagnet
Authors:
Hai Zhong,
Shizhu Qiao,
Shishen Yan,
Hong Zhang,
Yufeng Qin,
Lanju Liang,
Dequan Wei,
Yinrui Zhao,
Shishou Kang
Abstract:
Bloch-Bloembergen-Slonczewski equation is adopted to simulate magnetization dynamics in spin-valve based spin-transfer torque oscillator with synthetic antiferromagnet acting as a free magnetic layer. High frequency up to the terahertz scale is predicted in synthetic antiferromagnet spin-transfer torque oscillator with no external magnetic field if the following requirements are fulfilled: antifer…
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Bloch-Bloembergen-Slonczewski equation is adopted to simulate magnetization dynamics in spin-valve based spin-transfer torque oscillator with synthetic antiferromagnet acting as a free magnetic layer. High frequency up to the terahertz scale is predicted in synthetic antiferromagnet spin-transfer torque oscillator with no external magnetic field if the following requirements are fulfilled: antiferromagnetic coupling between synthetic antiferromagnetic layers is sufficiently strong, and the thickness of top (bottom) layer of synthetic antiferromagnet is sufficiently thick (thin) to achieve a wide current density window for the high oscillation frequency. Additionally, the transverse relaxation time of the free magnetic layer should be sufficiently larger compared with the longitudinal relaxation time. Otherwise, stable oscillation cannot be sustained or scenarios similar to regular spin valve-based spin-transfer torque oscillator with relatively low frequency will occur. Our calculations pave a new way for exploring THz spintronics devices.
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Submitted 30 July, 2018;
originally announced July 2018.
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Room Temperature Continuous-wave Excited Biexciton Emission in CsPbBr3 Nanocrystals
Authors:
Jie Chen,
Qing Zhang,
Wenna Du,
Yang Mi,
Qiuyu Shang,
Jia Shi,
Pengchong Liu,
Xinyu Sui,
Xianxin Wu,
Rui Wang,
Bo Peng,
Haizheng Zhong,
Guichuan Xing,
Xiaohui Qiu,
Tze Chien Sum,
Xinfeng Liu
Abstract:
Biexcitons are a manifestation of many-body excitonic interactions crucial for quantum information and quantum computation in the construction of coherent combinations of quantum states. However, due to their small binding energy and low transition efficiency, most biexcitons in conventional semiconductors exist either at cryogenic temperature or under femtosecond pulse laser excitation. Here we d…
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Biexcitons are a manifestation of many-body excitonic interactions crucial for quantum information and quantum computation in the construction of coherent combinations of quantum states. However, due to their small binding energy and low transition efficiency, most biexcitons in conventional semiconductors exist either at cryogenic temperature or under femtosecond pulse laser excitation. Here we demonstrate room temperature, continuous wave driven biexciton states in CsPbBr3 perovskite nanocrystals through coupling with a plasmonic nanogap. The room temperature CsPbBr3 biexciton excitation fluence (~100 mW/cm2) is reduced by ~10^13 times in the Ag nanowire-film nanogaps. The giant enhancement of biexciton emission is driven by coherent biexciton-plasmon Fano interference. These results provide new pathways to develop high efficiency non-blinking single photon sources, entangled light sources and lasers based on biexciton states.
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Submitted 17 April, 2018;
originally announced April 2018.
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Topological Floquet edge states in periodically curved waveguides
Authors:
Bo Zhu,
Honghua Zhong,
Yongguan Ke,
Xizhou Qin,
Andrey A. Sukhorukov,
Yuri S. Kivshar,
Chaohong Lee
Abstract:
We study the Floquet edge states in arrays of periodically curved optical waveguides described by the modulated Su-Schrieffer-Heeger model. Beyond the bulk-edge correspondence, our study explores the interplay between band topology and periodic modulations. By analysing the quasi-energy spectra and Zak phase, we reveal that, although topological and non-topological edge states can exist for the sa…
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We study the Floquet edge states in arrays of periodically curved optical waveguides described by the modulated Su-Schrieffer-Heeger model. Beyond the bulk-edge correspondence, our study explores the interplay between band topology and periodic modulations. By analysing the quasi-energy spectra and Zak phase, we reveal that, although topological and non-topological edge states can exist for the same parameters, \emph{they can not appear in the same spectral gap}. In the high-frequency limit, we find analytically all boundaries between the different phases and study the coexistence of topological and non-topological edge states. In contrast to unmodulated systems, the edge states appear due to either band topology or modulation-induced defects. This means that periodic modulations may not only tune the parametric regions with nontrivial topology, but may also support novel edge states.
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Submitted 31 May, 2018; v1 submitted 10 April, 2018;
originally announced April 2018.
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Electronic and mechanical properties of few-layer borophene
Authors:
Hongxia Zhong,
Kaixiang Huang,
Guodong Yu,
Shengjun Yuan
Abstract:
We report first principle calculations of electronic and mechanical properties of few-layer borophene with the inclusion of interlayer van der Waals (vdW) interaction. The anisotropic metallic behaviors are preserved from monolayer to few-layer structures. The energy splitting of bilayer borophene at $Γ$ point near the Fermi level is about 1.7 eV, much larger than the values (0.5--1 eV) of other l…
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We report first principle calculations of electronic and mechanical properties of few-layer borophene with the inclusion of interlayer van der Waals (vdW) interaction. The anisotropic metallic behaviors are preserved from monolayer to few-layer structures. The energy splitting of bilayer borophene at $Γ$ point near the Fermi level is about 1.7 eV, much larger than the values (0.5--1 eV) of other layered semiconductors, indicating much stronger vdW interactions in metallic layered borophene. In particular, the critical strains are enhanced by increasing the number of layers, leading to much more flexibility than that of monolayer structure. On the one hand, because of the buckled atomic structures, the out-of-plane negative Poisson's ratios are preserved as the layer-number increases. On the other hand, we find that the in-plane negative Poisson's ratios disappear in layered borophene, which is very different from puckered black phosphorus. The negative Poisson's ratio will recover if we enlarge the interlayer distance to 6.3 $\mboxÅ$, indicating that the physical origin behind the change of Poisson's ratios is the strong interlayer vdW interactions in layered borophene.
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Submitted 15 March, 2018;
originally announced March 2018.
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Sputtered Gold Nanoparticles Enhanced Quantum Dot Light-emitting Diodes
Authors:
Abida Perveen,
Xin Zhang,
Jialun Tang,
Dengbao Han,
Shuai Chang,
Luogen Deng,
Wenyu Ji,
Haizheng Zhong
Abstract:
Surface plasmonic effects of metallic particles have been known to be an effective method to improve the performance light emitting didoes. In this work, we reported the sputtered Au nanoparticles enhanced electroluminescence in inverted quantum dot light emitting diodes (ITO/Au NPs/ZnMgO/QDs/TFB/PEDOT:PSS/Al). By combining the time-resolved photoluminescence, transient electroluminescence and ult…
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Surface plasmonic effects of metallic particles have been known to be an effective method to improve the performance light emitting didoes. In this work, we reported the sputtered Au nanoparticles enhanced electroluminescence in inverted quantum dot light emitting diodes (ITO/Au NPs/ZnMgO/QDs/TFB/PEDOT:PSS/Al). By combining the time-resolved photoluminescence, transient electroluminescence and ultraviolet photoelectron spectrometer measurements, the enhancement can be explained to the internal field enhanced exciton coupling to surface plasmons and the increased electron injection rate with Au nanoparticles incorporation. Phenomenological numerical calculations indicated that the electron mobility of the electron transport layer was increased from 1.39x10-5 to 1.91x10-5 cm2/V.s for Au NPs modified devices. As a result, the maximum device luminescence is enhanced by 1.41 folds from 14,600 to 20,720 cd/cm2 and maximum current efficiency is improved by 1.29 folds from 3.12 to 4.02 cd/A.
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Submitted 18 January, 2018;
originally announced January 2018.
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High-Q microcavity enhanced optical properties of CuInS$_{2}$/ZnS colloidal quantum dots towards non-photodegradation
Authors:
Yue Sun,
Feilong Song,
Chenjiang Qian,
Kai Peng,
Sibai Sun,
Yanhui Zhao,
Zelong Bai,
**g Tang,
Shiyao Wu,
Hassan Ali,
Fang Bo,
Haizheng Zhong,
Kuijuan **,
Xiulai Xu
Abstract:
We report on a temporal evolution of photoluminescence (PL) spectroscopy of CuInS$_{2}$/ZnS colloidal quantum dots (QDs) by drop-casting on SiO$_{2}$/Si substrates and high quality factor microdisks (MDs) under different atmospheric conditions. Fast PL decay, peak blueshift and linewidth broadening due to photooxidation have been observed at low excitation power. With further increasing of the exc…
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We report on a temporal evolution of photoluminescence (PL) spectroscopy of CuInS$_{2}$/ZnS colloidal quantum dots (QDs) by drop-casting on SiO$_{2}$/Si substrates and high quality factor microdisks (MDs) under different atmospheric conditions. Fast PL decay, peak blueshift and linewidth broadening due to photooxidation have been observed at low excitation power. With further increasing of the excitation power, the PL peak position shows a redshift and linewidth becomes narrow, which is ascribed to the enhanced F$\ddot{o}$rster resonant energy transfer between different QDs by photoinduced agglomeration. The oxygen plays an important role in optically induced PL decay which is verified by reduced photobleaching effect in vacuum. When the QDs drop-casted on MDs, photooxidation and photobleaching are accelerated because the excitation efficiency is greatly enhanced with coupling the pum** laser with the cavity modes. However, when the emitted photons couple with cavity modes, a PL enhancement by more than 20 times is achieved because of the increased extraction efficiency and Purcell effects of MDs at room temperature (RT), and 35 times at 20 K. The photobleaching can be avoided with a small excitation power but with a strong PL intensity by taking advantages of high quality factor cavities. The high efficient PL emission without photodegradation is very promising for using CuInS$_{2}$ QDs as high efficient photon emitters at RT, where the photodegradation has always been limiting the practical applications of colloidal quantum dots.
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Submitted 13 January, 2017;
originally announced January 2017.
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EMP Lasing from Mn doped lead bromide perovskites nanorods
Authors:
Shuangyang Zou,
Zhihong Gong,
Lipeng Hou,
Ruibin Liu,
Haizheng Zhong,
Bingsuo Zou
Abstract:
Diluted magnetic semiconductor (DMS) nanostructures are promising platform to modulate carriers and spins for new information devices. Here we report that the high quality pure CH3NH3PbBr3 nanorods and Mn doped CH3NH3PbBr3 nanorods have been prepared by solution method and in which the exciton magnetic polarons (EMP) formed in Mn doped NRs, and a single mode lasing phenomenon from collective EMP i…
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Diluted magnetic semiconductor (DMS) nanostructures are promising platform to modulate carriers and spins for new information devices. Here we report that the high quality pure CH3NH3PbBr3 nanorods and Mn doped CH3NH3PbBr3 nanorods have been prepared by solution method and in which the exciton magnetic polarons (EMP) formed in Mn doped NRs, and a single mode lasing phenomenon from collective EMP in single NR have been detected when excited by fs pulse laser. This finding helps to understand the exciton and spin interactions and pave ways to the realization of new type of bosonic laser.
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Submitted 7 December, 2016;
originally announced December 2016.
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Band-gap structure and chiral discrete solitons in optical lattices with artificial gauge fields
Authors:
Qinzhou Ye,
Xizhou Qin,
Yongyao Li,
Honghua Zhong,
Yuri S. Kivshar,
Chaohong Lee
Abstract:
We study three-leg-ladder optical lattices loaded with repulsive atomic Bose-Einstein condensates and subjected to artificial gauge fields. By employing the plane-wave analysis and variational approach, we analyze the band-gap structure of the energy spectrum and reveal the exotic swallow-tail loop structures in the energy-level anti-crossing regions due to an interplay between the atom-atom inter…
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We study three-leg-ladder optical lattices loaded with repulsive atomic Bose-Einstein condensates and subjected to artificial gauge fields. By employing the plane-wave analysis and variational approach, we analyze the band-gap structure of the energy spectrum and reveal the exotic swallow-tail loop structures in the energy-level anti-crossing regions due to an interplay between the atom-atom interaction and artificial gauge field. Also, we discover stable discrete solitons residing in a semi-infinite gap above the highest band, these discrete solitons are associated with the chiral edge currents.
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Submitted 12 October, 2016;
originally announced October 2016.
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Dirac-Kondo semimetals and topological Kondo insulators in the dilute carrier limit
Authors:
Xiao-Yong Feng,
Hanting Zhong,
Jianhui Dai,
Qimiao Si
Abstract:
Heavy fermion systems contain not only strong electron correlations, which promote a rich set of quantum phases, but also a large spin-orbit coupling, which tends to endow the electronic states a topological character. Kondo insulators are understood in terms of a lattice of local moments coupled to conduction electrons in a half-filled band, i.e., with a dense population of about one electron per…
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Heavy fermion systems contain not only strong electron correlations, which promote a rich set of quantum phases, but also a large spin-orbit coupling, which tends to endow the electronic states a topological character. Kondo insulators are understood in terms of a lattice of local moments coupled to conduction electrons in a half-filled band, i.e., with a dense population of about one electron per unit cell. Here, we propose that a new class of Kondo insulator arises when the conduction-electron band is nearly empty ( or, equivalently, full ) . We demonstrated the effect through a honeycomb Anderson lattice model. In the empty carrier limit, spin-orbit coupling produces a gap in the hybridized heavy fermion band, thereby generating a topological Kondo insulator. This state can be understood in terms of a nearby phase in the overall phase diagram, a Dirac-Kondo semimetal whose quasiparticle excitations exhibit a non-trivial Berry phase. Our results point to the dilute carrier limit of the heavy-fermion systems as a new setting to study strongly correlated insulating and topological states.
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Submitted 8 May, 2016;
originally announced May 2016.
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Asymmetric sequential Landau-Zener dynamics of Bose condensed atoms in a cavity
Authors:
Jiahao Huang,
Pu Gong,
Xizhou Qin,
Honghua Zhong,
Chaohong Lee
Abstract:
We explore the asymmetric sequential Landau-Zener (LZ) dynamics in an ensemble of interacting Bose condensed two-level atoms coupled with a cavity field. Assuming the couplings between all atoms and the cavity field are identical, the interplay between atom-atom interaction and detuning may lead to a series of LZ transitions. Unlike the conventional sequential LZ transitions, which are symmetric t…
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We explore the asymmetric sequential Landau-Zener (LZ) dynamics in an ensemble of interacting Bose condensed two-level atoms coupled with a cavity field. Assuming the couplings between all atoms and the cavity field are identical, the interplay between atom-atom interaction and detuning may lead to a series of LZ transitions. Unlike the conventional sequential LZ transitions, which are symmetric to the zero detuning, the LZ transitions of Bose condensed atoms in a cavity field are asymmetric and sensitively depend on the photon number distribution of the cavity. In LZ processes involving single excitation numbers, both the variance of the relative atom number and the step slope of the sequential population ladder are asymmetric, and the asymmetry become more significant for smaller excitation numbers. Furthermore, in LZ processes involving multiple excitation numbers, there may appear asymmetric population ladders with decreasing step heights. During a dynamical LZ process, due to the atom-cavity coupling, the cavity field shows dynamical collapse and revivals. In comparison with the symmetric LZ transitions in a classical field, the asymmetric LZ transitions in a cavity field originate from the photon-number-dependent Rabi frequency. The asymmetric sequential LZ dynamics of Bose condensed atoms in a cavity field may open up a new way to explore the fundamental many-body physics in coupled atom-photon systems.
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Submitted 6 May, 2016;
originally announced May 2016.
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Who pumps spin current into nonmagnetic-metal (NM) layer in YIG/NM multilayers at ferromagnetic resonance?
Authors:
Yun Kang,
Hai Zhong,
Runrun Hao,
Shujun Hu,
Shishou Kang,
Guolei Liu,
Y. Zhang,
X. R. Wang,
Shishen Yan,
Yong Wu,
Shuyun Yu,
Guangbing Han,
Yong Jiang,
Liangmo Mei
Abstract:
Spin pum** in Yttrium-iron-garnet (YIG)/nonmagnetic-metal (NM) layer systems under ferromagnetic resonance (FMR) conditions is a popular method of generating spin current in the NM layer. A good understanding of the spin current source is essential in extracting spin Hall angle of the NM and in potential spintronics applications. It is widely believed that spin current is pumped from precessing…
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Spin pum** in Yttrium-iron-garnet (YIG)/nonmagnetic-metal (NM) layer systems under ferromagnetic resonance (FMR) conditions is a popular method of generating spin current in the NM layer. A good understanding of the spin current source is essential in extracting spin Hall angle of the NM and in potential spintronics applications. It is widely believed that spin current is pumped from precessing YIG magnetization into NM layer. Here, by combining microwave absorption and DC-voltage measurements on YIG/Pt and YIG/NM1/NM2 (NM1=Cu or Al, NM2=Pt or Ta), we unambiguously showed that spin current in NM came from the magnetized NM surface (in contact with YIG) due to the magnetic proximity effect (MPE), rather than the precessing YIG magnetization. This conclusion is reached through our unique detecting method where the FMR microwave absorption of the magnetized NM surface, hardly observed in the conventional FMR experiments, was greatly amplified when the electrical detection circuit was switched on.
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Submitted 24 April, 2016;
originally announced April 2016.