Showing 1–50 of 60 results for author: Zheng, R

Observation of oriented Landau levels in Berry dipole semimetals

Authors: Qingyang Mo, Riyi Zheng, Cuicui Lu, Xueqin Huang, Zhengyou Liu, Shuang Zhang

Abstract: Band crossing points, such as Weyl and Dirac points, play a crucial role in the topological classification of materials and guide the exploration of exotic topological phases. The Berry dipole, a three-dimensional band crossing point beyond the Chern class, hosts a dipolar Berry curvature field and gives rise to numerous nontrivial quantum geometric effects. It has been proposed that the Berry dip… ▽ More Band crossing points, such as Weyl and Dirac points, play a crucial role in the topological classification of materials and guide the exploration of exotic topological phases. The Berry dipole, a three-dimensional band crossing point beyond the Chern class, hosts a dipolar Berry curvature field and gives rise to numerous nontrivial quantum geometric effects. It has been proposed that the Berry dipole exhibits oriented Landau levels, whose spectrum critically relies on the orientation of the applied magnetic field. However, experimental demonstration of this phenomenon has remained elusive. Here we experimentally demonstrate oriented Landau levels by carefully engineering an inhomogeneous acoustic lattice. We observe distinct Landau level spectra and different propagation properties when the orientation of the pseudomagnetic field is reversed. Notably, we discover a new type of helical zero modes whose existence critically depends on the magnetic field's orientation. Our work paves the way for studying band crossings beyond Chern-class crossing points, including Berry multipoles and even-dimensional monopoles. Furthermore, it offers new insight for exploring topological devices. △ Less

Submitted 13 May, 2024; originally announced May 2024.

Structure and magnetic properties of a La$_{0.75}$Sr$_{0.25}$Cr$_{0.90}$O$_{3-δ}$ single crystal

Authors: Kaitong Sun, Yinghao Zhu, Shinichiro Yano, Qian Zhao, Muqing Su, Guan** Xu, Ruifeng Zheng, Ying Ellie Fu, Hai-Feng Li

Abstract: We have successfully grown large and good-quality single crystals of the La$_{0.75}$Sr$_{0.25}$Cr$_{0.90}$O$_{3-δ}$ compound using the floating-zone method with laser diodes. We investigated the crystal quality, crystallography, chemical composition, magnetic properties and the oxidation state of Cr in the grown single crystals by employing a combination of techniques, including X-ray Laue and pow… ▽ More We have successfully grown large and good-quality single crystals of the La$_{0.75}$Sr$_{0.25}$Cr$_{0.90}$O$_{3-δ}$ compound using the floating-zone method with laser diodes. We investigated the crystal quality, crystallography, chemical composition, magnetic properties and the oxidation state of Cr in the grown single crystals by employing a combination of techniques, including X-ray Laue and powder diffraction, scanning electron microscopy, magnetization measurements, X-ray photoelectron spectroscopy and light absorption. The La$_{0.75}$Sr$_{0.25}$Cr$_{0.90}$O$_{3-δ}$ single crystal exhibits a single-phase composition, crystallizing in a trigonal structure with the space group $R\bar{3}c$ at room temperature. The chemical composition was determined as La$_{0.75}$Sr$_{0.25}$Cr$_{0.90}$O$_{3-δ}$, indicating a significant chromium deficiency. Upon warming, we observed five distinctive characteristic temperatures, namely $T_1 =$ 21.50(1) K, $T_2 =$ 34.98(1) K, $T_3 =$ 117.94(1) K, $T_4 =$ 155.01(1) K, and $T_{\textrm{N}} =$ 271.80(1) K, revealing five distinct magnetic anomalies. Our magnetization study allows us to explore the nature of these anomalies. Remarkably, the oxidation state of chromium in the single-crystal La$_{0.75}$Sr$_{0.25}$Cr$_{0.90}$O$_{3-δ}$, characterized by a band gap of 1.630(8) eV, is exclusively attributed to Cr$^{3+}$ ions, making a departure from the findings of previous studies on polycrystalline materials. △ Less

Submitted 18 February, 2024; v1 submitted 14 February, 2024; originally announced February 2024.

Comments: 24 pages, 10 figures

Hierarchical Topological States in Thermal Diffusive Networks

Authors: Bao Chen, Kaiyun Pang, Ru Zheng, Feng Liu

Abstract: The integration of topological concepts into electronic energy band theory has been a transformative development in condensed matter physics. Since then, this paradigm has broadened its reach, extending to a variety of physical systems, including open ones. In this study, we employ analogues of the generalized $n$-dimensional Su-Schrieffer-Heeger model, a cornerstone in understanding topological i… ▽ More The integration of topological concepts into electronic energy band theory has been a transformative development in condensed matter physics. Since then, this paradigm has broadened its reach, extending to a variety of physical systems, including open ones. In this study, we employ analogues of the generalized $n$-dimensional Su-Schrieffer-Heeger model, a cornerstone in understanding topological insulators and higher-order topological states, to unveil a dimensional hierarchy of topological states within thermal diffusive networks. Unlike their electronic counterparts, the topological states in these networks are characterized by confined temperature profiles of dimension $(n-d)$ with constant diffusive rates, where $n$ represents the system's dimension and $d$ is the order of the topological state. Our findings demonstrate the existence of topological corner states in thermal diffusive systems up to $n=3$, along with surface and hinge states. We also identify and discuss an intermediate-order topological phase in the case $n=3$, characterized by the presence of hinge states but the absence of corner states. Furthermore, our work delves into the influence of chiral symmetry in these thermal networks, particularly focusing on topological thermal states with a near-zero diffusion rate. This research lays the foundation for advanced thermal management strategies that utilize topological states in multiple dimensions. △ Less

Submitted 21 December, 2023; originally announced December 2023.

Journal ref: Phys. Rev. B 109, 054312 (2024)

Spin-dependent localization of helical edge states in a non-Hermitian phononic crystal

Authors: Junpeng Wu, Riyi Zheng, Jialuo Liang, Manzhu Ke, Jiuyang Lu, Weiyin Deng, Xueqin Huang, Zhengyou Liu

Abstract: As a distinctive feature unique to non-Hermitian systems, non-Hermitian skin effect displays fruitful exotic phenomena in one or higher dimensions, especially when conventional topological phases are involved. Among them, hybrid skin-topological effect is theoretically proposed recently, which exhibits anomalous localization of topological boundary states at lower-dimensional boundaries accompanie… ▽ More As a distinctive feature unique to non-Hermitian systems, non-Hermitian skin effect displays fruitful exotic phenomena in one or higher dimensions, especially when conventional topological phases are involved. Among them, hybrid skin-topological effect is theoretically proposed recently, which exhibits anomalous localization of topological boundary states at lower-dimensional boundaries accompanied by extended bulk states. Here we experimentally realize the hybrid skin-topological effect in a non-Hermitian phononic crystal. The phononic crystal, before tuning to be non-Hermitian, is an ideal acoustic realization of the Kane-Mele model, which hosts gapless helical edge states at the boundaries. By introducing a staggered distribution of loss, the spin-dependent edge modes pile up to opposite corners, leading to a direct observation of the spin-dependent hybrid skin-topological effect. Our work highlights the interplay between topology and non-Hermiticity and opens new routes to non-Hermitian wave manipulations. △ Less

Submitted 19 December, 2023; originally announced December 2023.

Deep Charge: A Deep Learning Model of Electron Density from One-Shot Density Functional Theory Calculation

Authors: Taoyuze Lv, Zhicheng Zhong, Yuhang Liang, Feng Li, Jun Huang, Rongkun Zheng

Abstract: Electron charge density is a fundamental physical quantity, determining various properties of matter. In this study, we have proposed a deep-learning model for accurate charge density prediction. Our model naturally preserves physical symmetries and can be effectively trained from one-shot density functional theory calculation toward high accuracy. It captures detailed atomic environment informati… ▽ More Electron charge density is a fundamental physical quantity, determining various properties of matter. In this study, we have proposed a deep-learning model for accurate charge density prediction. Our model naturally preserves physical symmetries and can be effectively trained from one-shot density functional theory calculation toward high accuracy. It captures detailed atomic environment information, ensuring accurate predictions of charge density across bulk, surface, molecules, and amorphous structures. This implementation exhibits excellent scalability and provides efficient analyses of material properties in large-scale condensed matter systems. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Magnetotransport and Berry phase Tuning in Gd-doped Bi2Se3 Topological Insulator Single Crystals

Authors: Lei Chen, Shuang-Shuang Li, Weiyao Zhao, Abdulhakim Bake, David Cortie, Xiaolin Wang, Julie Karel, Han Li, Ren-Kui Zheng

Abstract: The Berry phase is an important concept in solids, correlated to the band topology, axion electrodynamics and potential applications of topological materials. Here, we investigate the magnetotransport and Berry phase of rare earth element Gd doped Bi2Se3 (Gd_Bi2Se3) topological insulator at low temperatures and high magnetic fields. Gd_Bi2Se3 single crystals show Shubnikov-de Haas (SdH) oscillatio… ▽ More The Berry phase is an important concept in solids, correlated to the band topology, axion electrodynamics and potential applications of topological materials. Here, we investigate the magnetotransport and Berry phase of rare earth element Gd doped Bi2Se3 (Gd_Bi2Se3) topological insulator at low temperatures and high magnetic fields. Gd_Bi2Se3 single crystals show Shubnikov-de Haas (SdH) oscillations with nontrivial Berry phase while Bi2Se3 single crystals show zero Berry phase in SdH oscillations. The temperature dependent magnetization curves can be well fitted with the Curie-Weiss law in 3-300 K region, indicating no magnetic ordering in Gd_Bi2Se3 crystals. Moreover, Gd do** has limited influence on the quantum oscillation parameters (e.g., frequency of oscillations, the area of the Fermi surface, effective electron mass, Fermi wave vectors etc.), but has an impact on the Hall mobility, carrier density, and band topology. Our results demonstrate that Gd do** can tune the Berry phase of topological insulators effectively, which may pave a way for the future realization of many predicted exotic transport phenomena of topological origin. △ Less

Submitted 25 July, 2023; originally announced July 2023.

Journal ref: Physical Review Materials 6.5 (2022): 054202

Colossal magnetoresistance in Ti lightly-doped Cr2Se3 single crystals with layered structure

Authors: Shu-Juan Zhang, Jian-Min Yan, F. Tang, ** Wu, Wei-Qi Dong, Dan-Wen Zhang, Fu-Sheng Luo, Lei Chen, Y. Fang, Tao Zhang, Yang Chai, Weiyao Zhao, Xiaolin Wang, Ren-Kui Zheng

Abstract: Stoichiometric Cr2Se3 single crystals are particular layer-structured antiferromagnets which possess noncolinear spin configuration, weak ferromagnetic moments, moderate magnetoresistance (MR ~ 14.3%), and bad metallic conductivity below the antiferromagnetic phase transition temperature. Here, we report an interesting >16000% colossal magnetoresistance (CMR) effect in Ti (1.5 atomic percent) ligh… ▽ More Stoichiometric Cr2Se3 single crystals are particular layer-structured antiferromagnets which possess noncolinear spin configuration, weak ferromagnetic moments, moderate magnetoresistance (MR ~ 14.3%), and bad metallic conductivity below the antiferromagnetic phase transition temperature. Here, we report an interesting >16000% colossal magnetoresistance (CMR) effect in Ti (1.5 atomic percent) lightly-doped Cr2Se3 single crystals. Such a CMR is approximately 1143 times larger than that of the stoichiometric Cr2Se3 crystals and is rarely observed in layered antiferromagnets and is attributed to the frustrated spin configuration. Moreover, the Ti do** not only dramatically changes the electronic conductivity of the Cr2Se3 crystal from a bad metal to a semiconductor with a gap of ~ 15 meV, but also induces a change of the magnetic anisotropy of the Cr2Se3 crystal from strong out-of-plane to weak in plane. Further, magnetotransport measurements reveal that the low-field MR scales with the square of the reduced magnetization, which is a signature of CMR materials. The layered Ti:Cr2Se3 with CMR effect could be used as 2D heterostructure building blocks to provide colossal negative MR in spintronic devices. △ Less

Submitted 25 July, 2023; originally announced July 2023.

Journal ref: ACS Applied Materials & Interfaces 13.49 (2021): 58949-58955

Topological Insulator VxBi1.08-xSn0.02Sb0.9Te2S as a Promising n-type Thermoelectric Material

Authors: Lei Chen, Weiyao Zhaoa, Meng Li, Guangsai Yang, Lei Guo, Abudulhakim Bake, Peng Liu, David Cortie, Ren-Kui Zheng, Zhenxiang Cheng, Xiaolin Wang

Abstract: As one of the most important n-type thermoelectric (TE) materials, Bi2Te3 has been studied for decades, with efforts to enhance the thermoelectric performance based on element do**, band engineering, etc. In this study, we report a novel bulk-insulating topological material system as a replacement for n-type Bi2Te3 materials: V doped Bi1.08Sn0.02Sb0.9Te2S (V:BSSTS) . The V:BSSTS is a bulk insula… ▽ More As one of the most important n-type thermoelectric (TE) materials, Bi2Te3 has been studied for decades, with efforts to enhance the thermoelectric performance based on element do**, band engineering, etc. In this study, we report a novel bulk-insulating topological material system as a replacement for n-type Bi2Te3 materials: V doped Bi1.08Sn0.02Sb0.9Te2S (V:BSSTS) . The V:BSSTS is a bulk insulator with robust metallic topological surface states. Furthermore, the bulk band gap can be tuned by the do** level of V, which is verified by magnetotransport measurements. Large linear magnetoresistance is observed in all samples. Excellent thermoelectric performance is obtained in the V:BSSTS samples, e.g., the highest figure of merit ZT of ~ 0.8 is achieved in the 2% V doped sample (denoted as V0.02) at 550 K. The high thermoelectric performance of V:BSSTS can be attributed to two synergistic effects: (1) the low conductive secondary phases Sb2S3, and V2S3 are believed to be important scattering centers for phonons, leading to lower lattice thermal conductivity; and (2) the electrical conductivity is increased due to the high-mobility topological surface states at the boundaries. In addition, by replacing one third of costly tellurium with abundant, low-cost, and less-toxic sulfur element, the newly produced BSSTS material is inexpensive but still has comparable TE performance to the traditional Bi2Te3-based materials, which offers a cheaper plan for the electronics and thermoelectric industries. Our results demonstrate that topological materials with unique band structures can provide a new platform in the search for new high performance TE materials. △ Less

Submitted 25 July, 2023; originally announced July 2023.

Journal ref: Journal of Alloys and Compounds 918 (2022): 165550

Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide

Authors: Ming-Yuan Yan, Shuang-Shuang Li, Jian-Min Yan, Li Xie, Meng Xu, Lei Guo, Shu-Juan Zhang, Guan-Yin Gao, Fei-Fei Wang, Shan-Tao Zhang, Xiaolin Wang, Yang Chai, Weiyao Zhao, Ren-Kui Zheng

Abstract: Spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOI through electrostatic gates have been investigated, however, the relatively weak and volatile tunability limit its practical applications in spintronics. Here, we demonstrate the nonvolatile electric-field control of SOI via constructing ferroelec… ▽ More Spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOI through electrostatic gates have been investigated, however, the relatively weak and volatile tunability limit its practical applications in spintronics. Here, we demonstrate the nonvolatile electric-field control of SOI via constructing ferroelectric Rashba architectures, i.e., 2D Bi2O2Se/PMN-PT ferroelectric field effect transistors. The experimentally observed weak antilocalization (WAL) cusp in Bi2O2Se films implies the Rashba-type SOI that arises from asymmetric confinement potential. Significantly, taking advantage of the switchable ferroelectric polarization, the WAL-to-weak localization (WL) transition trend reveals the competition between spin relaxation and dephasing process, and the variation of carrier density leads to a reversible and nonvolatile modulation of spin relaxation time and spin splitting energy of Bi2O2Se films by this ferroelectric gating. Our work provides a scheme to achieve nonvolatile control of Rashba SOI with the utilization of ferroelectric remanent polarization. △ Less

Submitted 25 July, 2023; originally announced July 2023.

Journal ref: Physical Review Applied 18.4 (2022): 044073

The Emerging Weak Antilocalization Effect in Semimetal Ta$_{0.7}$Nb$_{0.3}$Sb$_2$ Single Crystal

Authors: Lei Guo, Meng Xu, Lei Chen, Ting Wei Chen, Weiyao Zhao, Xiaoling Wang, Shuai Dong, Ren-Kui Zheng

Abstract: Weak antilocalization (WAL) effect is commonly observed in 2D systems, or 3D topological insulators, topological semimetal systems. Here we report the clear sign of WAL effect in high quality Ta$_{0.7}$Nb$_{0.3}$Sb$_2$ single crystals, in below 50$^\circ$ K region. The chemical vapor transport method was employed to grow the single crystal samples, the high crystallization quality and uniform elem… ▽ More Weak antilocalization (WAL) effect is commonly observed in 2D systems, or 3D topological insulators, topological semimetal systems. Here we report the clear sign of WAL effect in high quality Ta$_{0.7}$Nb$_{0.3}$Sb$_2$ single crystals, in below 50$^\circ$ K region. The chemical vapor transport method was employed to grow the single crystal samples, the high crystallization quality and uniform element distribution are verified by X-ray diffractions and electron microscopy techniques. Employing the Hall effect and two-band model fitting, the high carrier mobility (> 1000 cm$^2$V$^{-1}$s$^{-1}$ in 2 to 300$^\circ$ K region) and off-compensation electron/hole ratio are obtained. Due to the different angular dependence of WAL effect and the fermiology of Ta$_{0.7}$Nb$_{0.3}$Sb$_2$ single crystal, interesting magnetic-field-induced symmetry change is observed in angular magnetoresistance. These interesting transport properties will lead to more theoretical and applicational exploration in Ta$_{0.7}$Nb$_{0.3}$Sb$_2$ and related semimetal materials. △ Less

Submitted 25 July, 2023; originally announced July 2023.

Comments: 18 pages, 6 figures

Journal ref: Frontiers of Physics, 18(1), 13304

Coexistence of Logarithmic and SdH Quantum Oscillations in Ferromagnetic Cr-doped Tellurium Single Crystals

Authors: Shu-Juan Zhang, Lei Chen, Shuang-Shuang Li, Ying Zhang, Jian-Min Yan, Fang Tang, Yong Fang, Lin-Feng Fei, Weiyao Zhao, Julie Karel, Yang Chai, Ren-Kui Zheng

Abstract: We report the synthesis of transition-metal-doped ferromagnetic elemental single-crystal semiconductors with quantum oscillations using the physical vapor transport method. The 7.7 atom% Cr-doped Te crystals (Cr_Te) show ferromagnetism, butterfly-like negative magnetoresistance in the low temperature (< 3.8 K) and low field (< 0.15 T) region, and high Hall mobility, e.g., 1320 cm2 V-1 s-1 at 30 K… ▽ More We report the synthesis of transition-metal-doped ferromagnetic elemental single-crystal semiconductors with quantum oscillations using the physical vapor transport method. The 7.7 atom% Cr-doped Te crystals (Cr_Te) show ferromagnetism, butterfly-like negative magnetoresistance in the low temperature (< 3.8 K) and low field (< 0.15 T) region, and high Hall mobility, e.g., 1320 cm2 V-1 s-1 at 30 K and 350 cm2 V-1 s-1 at 300 K, implying that Cr_Te crystals are ferromagnetic elemental semiconductors. When B // c // I, the maximum negative MR is -27% at T = 20 K and B = 8 T. In the low temperature semiconducting region, Cr_Te crystals show strong discrete scale invariance dominated logarithmic quantum oscillations when the direction of the magnetic field B is parallel to the [100] crystallographic direction and show Landau quantization dominated Shubnikov-de Haas (SdH) oscillations for B // [210] direction, which suggests the broken rotation symmetry of the Fermi pockets in the Cr_Te crystals. The findings of coexistence of multiple quantum oscillations and ferromagnetism in such an elemental quantum material may inspire more study of narrow bandgap semiconductors with ferromagnetism and quantum phenomena. △ Less

Submitted 18 July, 2023; originally announced July 2023.

Comments: 25 pages, 25 figures

Journal ref: Journal of Physics: Condensed Matter 35.24 (2023): 245701

Antiferromagnetic topological insulating state in Tb$_{0.02}$Bi$_{1.08}$Sb$_{0.9}$Te$_2$S single crystals

Authors: Lei Guo, Weiyao Zhao, Qile Li, Meng Xu, Lei Chen, Abdulhakim Bake, Thi-Hai-Yen Vu, Yahua He, Yong Fang, David Cortie, Sung-Kwan Mo, Mark Edmonds, Xiaolin Wang, Shuai Dong, Julie Karel, Ren-Kui Zheng

Abstract: Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantized anomalous Hall insulator, which has been observed inmagnetic-topological-insulator-based devices. In this work, we report a successful do** of rare earth element Tb into Bi$_{1.08}$Sb… ▽ More Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantized anomalous Hall insulator, which has been observed inmagnetic-topological-insulator-based devices. In this work, we report a successful do** of rare earth element Tb into Bi$_{1.08}$Sb$_{0.9}$Te$_2$S topological insulator single crystals, in which the Tb moments are antiferromagnetically ordered below ~10 K. Benefiting from the in-bulk-gap Fermi level, transport behavior dominant by the topological surface states is observed below ~ 150 K. At low temperatures, strong Shubnikov-de Haas oscillations are observed, which exhibit 2D-like behavior. The topological insulator with long range magnetic ordering in rare earth doped Bi$_{1.08}$Sb$_{0.9}$Te$_2$S single crystal provides an ideal platform for quantum transport studies and potential applications. △ Less

Submitted 18 July, 2023; originally announced July 2023.

Comments: 15 pages, 3 figures

Journal ref: Physical Review B 107.12 (2023): 125125

Natural orbitals renormalization group approach to a spin-1/2 impurity interacting with two helical liquids

Authors: Ru Zheng, Rong-Qiang He, Zhong-Yi Lu

Abstract: Using the natural orbitals renormalization group, we studied the problem of a localized spin- 1/2 impurity coupled to two helical liquids via the Kondo interaction in a quantum spin Hall insulator, based on the Kane-Mele model defined in a finite zigzag graphene nanoribbon. We investigated the influence of the Kondo couplings with the helical liquids on both the static and dynamic properties of th… ▽ More Using the natural orbitals renormalization group, we studied the problem of a localized spin- 1/2 impurity coupled to two helical liquids via the Kondo interaction in a quantum spin Hall insulator, based on the Kane-Mele model defined in a finite zigzag graphene nanoribbon. We investigated the influence of the Kondo couplings with the helical liquids on both the static and dynamic properties of the ground state. The number and distinct spatial structures of the active natural orbitals (ANOs), which play essential roles in constructing the ground-state wave function, were first analyzed. Our numerical results indicate that two ANOs emerge, equal to the number of helical liquids. Specifically, at the coupling symmetry point, both ANOs are fully active with their spatial structures being respectively constituted by the different helical liquids. In comparison, when deviating from the symmetry point, only one ANO remains fully active, which is dominantly constructed by the helical liquid with the larger Kondo coupling. Local screening of the impurity, described by the impurity spin polarization and susceptibility, was further studied. It shows that at the coupling symmetry point, the impurity is maximally polarized and the spin susceptibility reaches the maximum. On the contrary, the impurity tends to be screened without polarization when the Kondo couplings deviate well from the symmetry point. The Kondo screening cloud, manifested by the spin correlation between the impurity and the conduction electrons, was finally explored. It is demonstrated that the Kondo cloud is mainly formed by the helical liquid with the larger Kondo coupling to the impurity. On the other hand, the spin-orbital coupling breaks the symmetry in spatial distribution of the spin correlation, leading to anisotropy in the Kondo cloud. △ Less

Submitted 24 March, 2023; originally announced March 2023.

Transport evidence of superlattice Dirac cones in graphene monolayer on twisted boron nitride substrate

Authors: Shimin Cao, Mantang Chen, Jiang Zeng, Ning Ma, Runjie Zheng, Ya Feng, Shili Yan, **g Liu, Kenji Watanabe, Takashi Taniguchi, X. C. Xie, Jian-Hao Chen

Abstract: Strong band engineering in two-dimensional (2D) materials can be achieved by introducing moiré superlattices, leading to the emergence of various novel quantum phases with promising potential for future applications. Presented works to create moiré patterns have been focused on a twist embedded inside channel materials or between channel and substrate. However, the effects of a twist inside the su… ▽ More Strong band engineering in two-dimensional (2D) materials can be achieved by introducing moiré superlattices, leading to the emergence of various novel quantum phases with promising potential for future applications. Presented works to create moiré patterns have been focused on a twist embedded inside channel materials or between channel and substrate. However, the effects of a twist inside the substrate materials on the unaligned channel materials are much less explored. In this work, we report the realization of superlattice multi-Dirac cones with the coexistence of the main Dirac cone in a monolayer graphene (MLG) on a ~0.14° twisted double-layer boron nitride (tBN) substrate. Transport measurements reveal the emergence of three pairs of superlattice Dirac points around the pristine Dirac cone, featuring multiple metallic or insulating states surrounding the charge neutrality point (CNP). Displacement field tunable and electron-hole asymmetric Fermi velocities are indicated from temperature dependent measurements, along with the gapless dispersion of superlattice Dirac cones. The experimental observation of multiple Dirac cones in MLG/tBN heterostructure is supported by band structure calculations employing periodic moiré potential. Our results unveil the potential of using twisted substrate as a universal band engineering technique for 2D materials regardless of lattice matching and crystal orientations, which might pave the way for a new branch of twistronics. △ Less

Submitted 17 November, 2022; v1 submitted 22 June, 2022; originally announced June 2022.

Comments: 13 pages, 4 figures

Hot 2DHG states in tellurium

Authors: Shu-Juan Zhang, Lei Chen, Shuang-Shuang Li, Zhao-Cai Wang, Ying Zhang, **g-Shi Ying, Julie Karel, Weiyao Zhao, Ren-Kui Zheng

Abstract: Element semiconductor Te is very popular in both fundamental electronic structure study, and device fabrication research area due to its unique band structure. Specifically, in low temperatures, Te possesses strong quantum oscillations with magnetic field applied in basal plane, either following Shubnikov-de Haas (SdH) oscillation rule or following log-periodic oscillation rule. With magnetic fiel… ▽ More Element semiconductor Te is very popular in both fundamental electronic structure study, and device fabrication research area due to its unique band structure. Specifically, in low temperatures, Te possesses strong quantum oscillations with magnetic field applied in basal plane, either following Shubnikov-de Haas (SdH) oscillation rule or following log-periodic oscillation rule. With magnetic field applied along the [001] direction, the SdH oscillations are attributed to the two-dimensional hole gas (2DHG) surface states. Here we reported an interesting SdH oscillation in Te-based single crystals, with the magnetic field applied along the [001] direction of the crystals, showing the maximum oscillation intensity at ~ 75 K, and still traceable at 200 K, which indicates a rather hot 2DHG state. The nontrivial Berry phase can be also obtained from the oscillations, implying the contribution from topological states. More importantly, the high temperature SdH oscillation phenomena are observed in different Te single crystals samples, and Te single crystals with nonmagnetic/magnetic dopants, showing robustness to bulk defects. Therefore, the oscillation may be contributed by the bulk symmetry protected hot 2DHG states, which will offer a new platform for high-temperature quantum transport studies. △ Less

Submitted 6 April, 2022; v1 submitted 5 April, 2022; originally announced April 2022.

Comments: 14 pages, 4 figures

Layer-dependent Raman spectroscopy and electronic applications of wide-bandgap 2D semiconductor \b{eta}-ZrNCl

Authors: Huiyu Nong, Qinke Wu, Junyang Tan, Yujie Sun, Rongxu Zheng, Rongjie Zhang, Shilong Zhao, Bilu Liu

Abstract: In recent years, two-dimensional (2D) layered semiconductors have received much attention for their potential in next-generation electronics and optoelectronics. Wide-bandgap 2D semiconductors are especially important in blue and ultraviolet wavelength region, while there are very few 2D materials in this region. Here, monolayer \b{eta}-type zirconium nitride chloride (\b{eta}-ZrNCl) is isolated f… ▽ More In recent years, two-dimensional (2D) layered semiconductors have received much attention for their potential in next-generation electronics and optoelectronics. Wide-bandgap 2D semiconductors are especially important in blue and ultraviolet wavelength region, while there are very few 2D materials in this region. Here, monolayer \b{eta}-type zirconium nitride chloride (\b{eta}-ZrNCl) is isolated for the first time, which is an air-stable layered material with a bandgap of ~3.0 eV in bulk. Systematical investigation of layer-dependent Raman scattering of ZrNCl from monolayer, bilayer, to bulk reveals a blue shift of its out-of-plane A1g peak at ~189 cm-1. Importantly, this A1g peak is absent in monolayer, suggesting that it is a fingerprint to quickly identify monolayer and for the thickness determination of 2D ZrNCl. The back-gate field-effect transistor based on few-layer ZrNCl shows a high on/off ratio of 108. These results suggest the potential of 2D \b{eta}-ZrNCl for electronic applications. △ Less

Submitted 15 February, 2022; originally announced February 2022.

Comments: 14 pages, 4 figures

Magnetic correlation between two local spins in a quantum spin Hall insulator

Authors: Ru Zheng, Rong-Qiang He, Zhong-Yi Lu

Abstract: Two spins located at the edge of a quantum spin Hall insulator may interact with each other via indirect spin-exchange interaction mediated by the helical edge states, namely the RKKY interaction, which can be measured by the magnetic correlation between the two spins. By means of the newly developed natural orbitals renormalization group (NORG) method, we investigated the magnetic correlation bet… ▽ More Two spins located at the edge of a quantum spin Hall insulator may interact with each other via indirect spin-exchange interaction mediated by the helical edge states, namely the RKKY interaction, which can be measured by the magnetic correlation between the two spins. By means of the newly developed natural orbitals renormalization group (NORG) method, we investigated the magnetic correlation between two Kondo impurities interacting with the helical edge states, based on the Kane-Mele model defined in a finite zigzag graphene nanoribbon with spin-orbital coupling (SOC). We find that the SOC effect breaks the symmetry in spatial distribution of the magnetic correlation, leading to anisotropy in the RKKY interaction. Specifically, the total correlation is always ferromagnetic (FM) when the two impurities are located at the same sublattice, while it is always antiferromagnetic (AFM) when at the different sublattices. Meanwhile, the behavior of the in-plane correlation is consistent with that of the total correlation. However, the out-of-plane correlation can be tuned from FM to AFM by manipulating either the Kondo coupling or the interimpurity distance. Furthermore, the magnetic correlation is tunable by the SOC, especially that the out-of-plane correlation can be adjusted from FM to AFM by increasing the strength of SOC. Dynamic properties of the system, represented by the spin-staggered excitation spectrum and the spin-staggered susceptibility at the two impurity sites, are finally explored. It is shown that the spin-staggered susceptibility is larger when the two impurities are located at the different sublattices than at the same sublattice, which is consistent with the behavior of the out-of-plane correlation. On the other hand, our study further demonstrates that the NORG is an effective numerical method for studying the quantum impurity systems. △ Less

Submitted 18 January, 2022; originally announced January 2022.

Comments: 9 pages, 9 figures

An Anderson impurity interacting with the helical edge states in a quantum spin Hall insulator

Authors: Ru Zheng, Rong-Qiang He, Zhong-Yi Lu

Abstract: Using the natural orbitals renormalization group (NORG) method, we have investigated the screening of the local spin of an Anderson impurity interacting with the helical edge states in a quantum spin Hall insulator. We find that there is a local spin formed at the impurity site and the local spin is completely screened by electrons in the quantum spin Hall insulator. Meanwhile, the local spin is s… ▽ More Using the natural orbitals renormalization group (NORG) method, we have investigated the screening of the local spin of an Anderson impurity interacting with the helical edge states in a quantum spin Hall insulator. We find that there is a local spin formed at the impurity site and the local spin is completely screened by electrons in the quantum spin Hall insulator. Meanwhile, the local spin is screened dominantly by a single active natural orbital. We then show that the Kondo screening mechanism becomes transparent and simple in the framework of natural orbitals formalism. We project the active natural orbital respectively into real space and momentum space to characterize its structure. And we confirm the spin-momentum locking property of the edge states based on the occupancy of a Bloch state in the edge to which the impurity couples. Furthermore, we study the dynamical property of the active natural orbital represented by the local density of states, from which we observe the Kondo resonance peak. △ Less

Submitted 14 January, 2022; originally announced January 2022.

Comments: 5 pages, 6 figures

Order parameter for the multichannel Kondo model at quantum criticality

Authors: Ru Zheng, Rong-Qiang He, Zhong-Yi Lu

Abstract: A multichannel Kondo model, where two or more equivalent but independent channels of electrons compete to screen a spin-1/2 impurity, shows overcompensation of the impurity spin, leading to the non-Fermi-liquid behavior in various thermodynamic and transport properties. However, when the channel symmetry is broken, an impurity quantum phase transition can occur at zero temperature. Identification… ▽ More A multichannel Kondo model, where two or more equivalent but independent channels of electrons compete to screen a spin-1/2 impurity, shows overcompensation of the impurity spin, leading to the non-Fermi-liquid behavior in various thermodynamic and transport properties. However, when the channel symmetry is broken, an impurity quantum phase transition can occur at zero temperature. Identification of an order parameter describing the impurity quantum phase transition is very difficult since it is beyond the conventional Landau-Ginzburg-Wilson theory. By employing the natural orbitals renormalization group method, we study both two-channel and threechannel Kondo models, from the perspective of spin correlation between the impurity and electrons in electronic channels. Here we demonstrate that by introducing the spin-correlation ratio as an order parameter we can characterize impurity quantum phase transitions driven by channel asymmetry. In particular, the universal critical exponents $β$ of the spin-correlation ratio and $ν$ of the correlation length are explicitly determined by finite-sizescaling analysis, namely, $β= 0.10(1), ν= 2.0(1)$, and $β= 0.10(1), ν= 2.5(1)$ for the two-channel and three-channel Kondo models, respectively. △ Less

Submitted 12 January, 2022; originally announced January 2022.

Comments: 7 pages, 7 figures

Realization of graphene logics in an exciton-enhanced insulating phase

Authors: Kaining Yang, Xiang Gao, Yaning Wang, Tongyao Zhang, **fan Gu, Zhao** Luo, Runjie Zheng, Shimin Cao, Hanwen Wang, Xingdan Sun, Kenji Watanabe, Takashi Taniguchi, Xiuyan Li, **g Zhang, Xi Dai, Jianhao Chen, Yu Ye, Zheng Vitto Han

Abstract: For two decades, two-dimensional carbon species, including graphene, have been the core of research in pursuing next-generation logic applications beyond the silicon technology. Yet the opening of a gap in a controllable range of do**, whilst kee** high conductance outside of this gapped state, has remained a grand challenge in them thus far. Here we show that, by bringing Bernal-stacked bilay… ▽ More For two decades, two-dimensional carbon species, including graphene, have been the core of research in pursuing next-generation logic applications beyond the silicon technology. Yet the opening of a gap in a controllable range of do**, whilst kee** high conductance outside of this gapped state, has remained a grand challenge in them thus far. Here we show that, by bringing Bernal-stacked bilayer graphene in contact with an anti-ferromagnetic insulator CrOCl, a strong insulating behavior is observed in a wide range of positive total electron do** $n_\mathrm{tot}$ and effective displacement field $D_\mathrm{eff}$ at low temperatures. Transport measurements further prove that such an insulating phase can be well described by the picture of an inter-layer excitonic state in bilayer graphene owing to electron-hole interactions. The consequential over 1 $\mathrm{GΩ}$ excitonic insulator can be readily killed by tuning $D_\mathrm{eff}$ and/or $n_\mathrm{tot}$, and the system recovers to a high mobility graphene with a sheet resistance of less than 100 $\mathrmΩ$. It thus yields transistors with "ON-OFF" ratios reaching 10$^{7}$, and a CMOS-like graphene logic inverter is demonstrated. Our findings of the robust insulating phase in bilayer graphene may be a leap forward to fertilize the future carbon computing. △ Less

Submitted 6 October, 2021; originally announced October 2021.

Comments: 10 pages, 4 figures

Out-of-Plane Resistance Switching of 2D Bi2O2Se at Nanoscale

Authors: Wenjun Chen, Rongjie Zhang, Rongxu Zheng, Bilu Liu

Abstract: 2D bismuth oxyselenide (Bi2O2Se) with high electron mobility shows great potential for nanoelectronics. Although in-plane properties of Bi2O2Se have been widely studied, its out-ofplane electrical transport behavior remains elusive, despite its importance in fabricating devices with new functionality and high integration density. Here, we study the out-of-plane electrical properties of 2D Bi2O2Se… ▽ More 2D bismuth oxyselenide (Bi2O2Se) with high electron mobility shows great potential for nanoelectronics. Although in-plane properties of Bi2O2Se have been widely studied, its out-ofplane electrical transport behavior remains elusive, despite its importance in fabricating devices with new functionality and high integration density. Here, we study the out-of-plane electrical properties of 2D Bi2O2Se at nanoscale by conductive atomic force microscope. We find that hillocks with tunable heights and sizes are formed on Bi2O2Se after applying vertical electrical field. Intriguingly, such hillocks are conductive in vertical direction, resulting in a previously unknown out-of-plane resistance switching in thick Bi2O2Se flakes while ohmic conductive characteristic in thin ones. Furthermore, we observe the transformation from bipolar to stable unipolar conduction in thick Bi2O2Se flake possessing such hillocks, suggesting its potential to function as a selector in vertical devices. Our work reveals unique out-of-plane transport behavior of 2D Bi2O2Se, providing the basis for fabricating vertical devices based on this emerging 2D material. △ Less

Submitted 30 August, 2021; originally announced August 2021.

Comments: 18 pages, 4 figures

Investigation on the properties of Sine-Wiener noise and its induced escape in the particular limit case $D \to \infty$

Authors: Jianlong Wang, Xiaolei Leng, Xianbin Liu, Ronghui Zheng

Abstract: Sine-Wiener noise is increasingly adopted in realistic stochastic modeling for its bounded nature. However, many features of the SW noise are still unexplored. In this paper, firstly, the properties of the SW noise and its integral process are explored as the parameter $D$ in the SW noise tends to infinite. It is found that although the distribution of the SW noise is quite different from Gaussian… ▽ More Sine-Wiener noise is increasingly adopted in realistic stochastic modeling for its bounded nature. However, many features of the SW noise are still unexplored. In this paper, firstly, the properties of the SW noise and its integral process are explored as the parameter $D$ in the SW noise tends to infinite. It is found that although the distribution of the SW noise is quite different from Gaussian white noise, the integral process of the SW noise shows many similarities with the Wiener process. Inspired by the Wiener process, which uses the diffusion coefficient to denote the intensity of the Gaussian noise, a quantity is put forward to characterize the SW noise's intensity. Then we apply the SW noise to a one-dimensional double-well potential system and the Maier-Stein system to investigate the escape behaviors. A more interesting result is observed that the mean first exit time also follows the well-known Arrhenius law as in the case of the Gaussian noise, and the quasi-potential and the exit location distributions are very close to the results of the Gaussian noise. △ Less

Submitted 17 July, 2021; originally announced July 2021.

Comments: 13 pages, 8 figures, 3 tables

Bound states of spin-orbit coupled cold atoms in a Dirac delta-function potential

Authors: Jieli Qin, Renfei Zheng, Lu Zhou

Abstract: Dirac delta-function potential is widely studied in quantum mechanics because it usually can be exactly solved and at the same time is useful in modeling various physical systems. Here we study a system of delta-potential trapped spinorbit coupled cold atoms. The spin-orbit coupled atomic matter wave has two kinds of evanescent modes, one of which has pure imaginary wavevector and is an ordinary e… ▽ More Dirac delta-function potential is widely studied in quantum mechanics because it usually can be exactly solved and at the same time is useful in modeling various physical systems. Here we study a system of delta-potential trapped spinorbit coupled cold atoms. The spin-orbit coupled atomic matter wave has two kinds of evanescent modes, one of which has pure imaginary wavevector and is an ordinary evanescent wave; while the other with a complex number wave vector is recognized as oscillating evanescent wave. We identified the eigenenergy spectra and the existence of bound states in this system. The bound states can be constructed analytically using the two kinds of evanescent modes and we found that they exhibit typical features of stripe phase, separated phase or zero-momentum phase. In addition to that, the properties of semi-bound states are also discussed, which is a localized wave packet on a plane wave background. △ Less

Submitted 29 May, 2020; originally announced May 2020.

Journal ref: J. Phys. B: At. Mol. Opt. Phys. 53 125301 (2020)

Novel highest-Tc superconductivity in two-dimensional Nb2C MXene

Authors: Zaheer Ud Din Babar, M. S. Anwar, Muhammad Mumtaz, Mudassir Iqbal, Ren-Kui Zheng, Deji Akinwande, Syed Rizwan

Abstract: Currently, superconductivity in two-dimensional (2D) materials is a hot topic of research owing to their potential technological applications. Here, we report observation of superconductivity in a 2D Nb2C MXene with transition temperature of 12.5 K, which is the highest transition temperature in MXene attained till now. We systematically optimized the chemical etching process to synthesize the Nb2… ▽ More Currently, superconductivity in two-dimensional (2D) materials is a hot topic of research owing to their potential technological applications. Here, we report observation of superconductivity in a 2D Nb2C MXene with transition temperature of 12.5 K, which is the highest transition temperature in MXene attained till now. We systematically optimized the chemical etching process to synthesize the Nb2C MXene from its Nb2AlC MAX phase. The X-ray diffraction (XRD) shows a clear (002) peak indicating the successful formation of MXene as well as a significant increase in the c-lattice parameter from 13.83Å to 22.72Å that indicates the delamination of Nb2C MXene sheets as revealed by morphological study using scanning electron microscope. The Meissner effect is detected using superconducting quantum interference device (SQUID: Quantum design). Lower and upper critical fields as a function of temperature follow the Ginzburg-Landau (GL) theory indicating the superconducting nature of the Nb2C MXene. Strong-electron phonon interaction and the large density-of-states at Fermi level may cause the emergence of superconductivity at such a higher transition temperature which has theoretically been predicted for Mo2C MXene. Our work is a significant advancement in the field of research and potential applications of 2D MXene. △ Less

Submitted 16 August, 2019; v1 submitted 11 August, 2019; originally announced August 2019.

Comments: 13 pages, 5 figures

Co-existence of Novel Ferromagnetic/Anti-ferromagnetic Phases in Two-dimensional Ti3C2 MXene

Authors: Mehroz Iqbal, Jameela Fatheema, Malika Rani, Ren-Kui Zheng, Saleem Ayaz Khan, Syed Rizwan

Abstract: This study reports first synthesis of MXene-derived co-existing phases. New family of two-dimensional materials such as Ti3C2 namely MXene, having transition metal forming hexagonal structure with carbon atoms have attracted tremendous interest now a days. We have reported structural, optical and magnetic properties of undoped and La-doped Ti3C2Tx MXene synthesized using co-precipitation method. T… ▽ More This study reports first synthesis of MXene-derived co-existing phases. New family of two-dimensional materials such as Ti3C2 namely MXene, having transition metal forming hexagonal structure with carbon atoms have attracted tremendous interest now a days. We have reported structural, optical and magnetic properties of undoped and La-doped Ti3C2Tx MXene synthesized using co-precipitation method. The c-lattice parameters (c-LP) calculated for La-MXene is c=18.3Å which is slightly different from the parent un-doped MXene (c=19.2Å), calculated from X-ray diffraction data. The do** of La+3 ions shrinks Ti3C2Tx layers perpendicular to the planes but expands slightly the in-plane lattice parameters. The band gap for MXene is calculated to be 1.06 eV which is increased to 1.44 eV after the do** of La+3 ion that shows its good semiconducting nature. The experimental results for magnetic properties of both the samples have been presented and discussed, indicating the presence of ferromagnetic-antiferromagnetic phases co-existing. The results presented here are unique and first report on magnetic properties of two-dimensional carbides for magnetic data storage applications. △ Less

Submitted 29 July, 2019; originally announced July 2019.

Comments: 13 pages, 12 figures

MSC Class: 81V99

Electronic Transport Evidence for Topological Nodal-Line Semimetals of ZrGeSe single crystals

Authors: Lei Guo, Ting-Wei Chen, Chen Chen, Lei Chen, Yang Zhang, Guan-Yin Gao, Jie Yang, Xiao-Guang Li, Wei-Yao Zhao, Shuai Dong, Ren-Kui Zheng

Abstract: Although the band topology of ZrGeSe has been studied via magnetic torque technique, the electronic transport behaviors related to the relativistic Fermions in ZrGeSe are still unknown. Here, we first report systematic electronic transport properties of high-quality ZrGeSe single crystals under magnetic fields up to 14 T. Resistivity plateaus of temperature dependent resistivity curves both in the… ▽ More Although the band topology of ZrGeSe has been studied via magnetic torque technique, the electronic transport behaviors related to the relativistic Fermions in ZrGeSe are still unknown. Here, we first report systematic electronic transport properties of high-quality ZrGeSe single crystals under magnetic fields up to 14 T. Resistivity plateaus of temperature dependent resistivity curves both in the presence and absence of magnetic fields as well as large, non-saturating magnetoresistance in low-temperature region were observed. By analyzing the temperature- and angular-dependent Shubnikov-de Haas oscillations and fitting it via the Lifshitz-Kosevich (LK) formula with the Berry phase being taken into account, we proved that Dirac fermions dominate the electronic transport behaviors of ZrGeSe and the presence of non-trivial Berry phase. First principles calculations demonstrate that ZrGeSe possesses Dirac bands and normal bands near Fermi surface, resulting in the observed magnetotransport phenomena. These results demonstrate that ZrGeSe is a topological nodal-line semimetal, which provides a fundamentally important platform to study the quantum physics of topological semimetals. △ Less

Submitted 10 July, 2019; originally announced July 2019.

Comments: 21 pages, 6 figures

Journal ref: ACS Applied Electronic Materials 1, 869-876 (2019)

Magnetic, electrochemical and thermoelectric properties of $P2 - Na_x(Co_{7/8}Sb_{1/8})O_2$

Authors: M. H. N. Assadi, S. Li, R. K. Zheng, S. P. Ringer, A. B. Yu

Abstract: We theoretically investigated the electronic, electrochemical and magnetic properties of Sb doped $Na_xCoO_2$ ($x = 1, 0.75$ and $0.50$). $Sb_{Co}$ dopants adopt +5 oxidation state in $Na_xCoO_2$ host lattice for all Na concentrations ($x$). Due to high oxidation states, $Sb^{5+}$ strongly repels Na ions and therefore it decreases the electrochemical potential (vs. Na/Na$^+$). The electrons introd… ▽ More We theoretically investigated the electronic, electrochemical and magnetic properties of Sb doped $Na_xCoO_2$ ($x = 1, 0.75$ and $0.50$). $Sb_{Co}$ dopants adopt +5 oxidation state in $Na_xCoO_2$ host lattice for all Na concentrations ($x$). Due to high oxidation states, $Sb^{5+}$ strongly repels Na ions and therefore it decreases the electrochemical potential (vs. Na/Na$^+$). The electrons introduced by $Sb^{5+}$ localize on nearby Co ions creating $Co^{2+}$ species which are absent in undoped $Na_xCoO_2$. $Co^{2+}$ ions reduce the spin entropy flow decreasing the Seebeck coefficient in the Sb doped compounds. The results can be generalized to other dopants with high oxidation state. △ Less

Submitted 26 February, 2019; originally announced February 2019.

Comments: 6 pages, 3 figures, 2 tables

Journal ref: Chemical Physics Letters 687, 233-237 (2017)

Natural orbitals renormalization group approach to a Kondo singlet

Authors: Ru Zheng, Rong-Qiang He, Zhong-Yi Lu

Abstract: A magnetic impurity embedded in a metal host is collectively screened by a cloud of conduction electrons to form a Kondo singlet below a characteristic energy scale $T_K$, the Kondo temperature, through the mechanism of the Kondo effect. We have reinvestigated the Kondo singlet by means of the newly developed natural orbitals renormalization group (NORG) method. We find that, in the framework of n… ▽ More A magnetic impurity embedded in a metal host is collectively screened by a cloud of conduction electrons to form a Kondo singlet below a characteristic energy scale $T_K$, the Kondo temperature, through the mechanism of the Kondo effect. We have reinvestigated the Kondo singlet by means of the newly developed natural orbitals renormalization group (NORG) method. We find that, in the framework of natural orbitals formalism, the Kondo screening mechanism becomes transparent and simple, while the intrinsic structure of Kondo singlet is clearly resolved. For a single impurity Kondo system, there exits a single active natural orbital which screens the magnetic impurity dominantly. In the perspective of entanglement, the magnetic impurity is entangled dominantly with the active natural orbital, i.e., the subsystem formed by the active natural orbital and the magnetic impurity basically disentangles from the remaining system. We have also studied the structures of the active natural orbital respectively projected into real space and momentum space. Moreover, the dynamical properties, represented by one-particle Green's functions defined at impurity site with active natural orbital, were obtained by using correction vector method. In order to clarify the spatial extension of the Kondo screening cloud, the concept of Kondo correlation energy was introduced. With this concept we obtain a characteristic length scale beyond which the Kondo screening cloud is hardly detected in experiment. Our numerical results indicate that this characteristic length scale usually is just a few nanometers, which interprets why it is difficult to detect the Kondo screening cloud experimentally in a metal host. △ Less

Submitted 8 March, 2018; originally announced March 2018.

Comments: 10 pages and 14 figures

Journal ref: Sci. China Phys. Mech. Astron. 63, 297411 (2020)

Material and structural optimization of metal nanowire/AAO composites for high-temperature solar thermal application

Authors: Yuefeng Hu, Xiu Li Si, Xiaoling Wu, Guo An Cheng, Rui Ting Zheng

Abstract: In this paper, we study the solar selective absorbing properties of metal nanowire array (NWA) / anodic aluminum oxide (AAO) composites at 1000 K via numerical simulation. The materials and structural parameters which influence the wavelength absorption between 0.28 and 10 microns are simulated and optimized. The results reveal that W NWA / AAO composites with nanowire length of 7.3 microns, fill… ▽ More In this paper, we study the solar selective absorbing properties of metal nanowire array (NWA) / anodic aluminum oxide (AAO) composites at 1000 K via numerical simulation. The materials and structural parameters which influence the wavelength absorption between 0.28 and 10 microns are simulated and optimized. The results reveal that W NWA / AAO composites with nanowire length of 7.3 microns, fill factor of 0.03, and AAO template thickness of 0.1 microns exhibits the best selective absorption. This composite has 0.90 solar absorptivity and 0.045 thermal emissivity in 1000 K, and shows a photothermal conversion efficiency of 71.5 %. △ Less

Submitted 16 October, 2017; originally announced October 2017.

Comments: 9 pages, 5 figures

Intrinsic Ferromagnetism in the Diluted Magnetic Semiconductor Co:TiO$_2$

Authors: H. Saadaoui, X. Luo, Z. Salman, X. Y. Cui, N. N. Bao, P. Bao, R. K. Zheng, L. Tseng, Y. H. Du, T. Prokscha, A. Suter, T. Liu, Y. R. Wang, S. Li, J. Ding, S. P. Ringer, E. Morenzoni, J. B. Yi

Abstract: Here we present a study of magnetism in \CTO\ anatase films grown by pulsed laser deposition under a variety of oxygen partial pressures and deposition rates. Energy-dispersive spectrometry and transition electron microscopy analyses indicate that a high deposition rate leads to a homogeneous microstructure, while very low rate or postannealing results in cobalt clustering. Depth resolved low-ener… ▽ More Here we present a study of magnetism in \CTO\ anatase films grown by pulsed laser deposition under a variety of oxygen partial pressures and deposition rates. Energy-dispersive spectrometry and transition electron microscopy analyses indicate that a high deposition rate leads to a homogeneous microstructure, while very low rate or postannealing results in cobalt clustering. Depth resolved low-energy muon spin rotation experiments show that films grown at a low oxygen partial pressure ($\approx 10^{-6}$ torr) with a uniform structure are fully magnetic, indicating intrinsic ferromagnetism. First principles calculations identify the beneficial role of low oxygen partial pressure in the realization of uniform carrier-mediated ferromagnetism. This work demonstrates that Co:TiO$_2$ is an intrinsic diluted magnetic semiconductor. △ Less

Submitted 7 December, 2016; originally announced December 2016.

Comments: 6 pages, 4 figures, Supplemental Material (not included): 17 pages, 9 Figures

Journal ref: Physical Review Letters, 117, 227202 (2016)

Spin-sensitive atom mirror via spin-orbit interaction

Authors: Lu Zhou, Ren-Fei Zheng, Wei** Zhang

Abstract: Based on the spin-orbit coupling recently implemented in a neutral cold-atom gas, we propose a scheme to realize spin-dependent scattering of cold atoms. In particular we consider a matter wave packet of cold-atom gas im**ing upon a step potential created by the optical light field, inside of which the atoms are subject to spin-orbit interaction. We show that the proposed system can act as a spi… ▽ More Based on the spin-orbit coupling recently implemented in a neutral cold-atom gas, we propose a scheme to realize spin-dependent scattering of cold atoms. In particular we consider a matter wave packet of cold-atom gas im**ing upon a step potential created by the optical light field, inside of which the atoms are subject to spin-orbit interaction. We show that the proposed system can act as a spin polarizer or spin-selective atom mirror for the incident atomic beam. The principle and the operating parameter regime of the system are carefully discussed. △ Less

Submitted 29 November, 2016; originally announced November 2016.

Journal ref: Phys. Rev. A 94, 053630 (2016)

Powerful and Tunable THz Emitters Based on the Fe/Pt Magnetic Heterostructure

Authors: Dewang Yang, Jianhui Liang, Chao Zhou, Lu Sun, Ronger Zheng, Shengnian Luo, Yizheng Wu, **gbo Qi

Abstract: In this work, we report our study on the THz emission in Fe/Pt magnetic heterostructures. We have carried out a comprehensive investigation of THz emission from Fe/Pt magnetic heterostructures, employing time-domain THz spectroscopy. We reveal that by properly tuning the thickness of Fe or Pt layer, THz emission can be greatly improved in this type of heterostructure. We further demonstrate that t… ▽ More In this work, we report our study on the THz emission in Fe/Pt magnetic heterostructures. We have carried out a comprehensive investigation of THz emission from Fe/Pt magnetic heterostructures, employing time-domain THz spectroscopy. We reveal that by properly tuning the thickness of Fe or Pt layer, THz emission can be greatly improved in this type of heterostructure. We further demonstrate that the THz field strength emitted from a newly designed multilayer (Pt/Fe/MgO)$_n$ with n=3 can reach a value of ~1.6 kV/cm, which is comparable to the values from the conventional GaAs antenna with a bias of 4 kV/cm, and the nonlinear crystals, e.g., 100 micrometer GaP and 2 mm ZnTe. For the first time, the intensity and spectrum of THz wave is demonstrated to be tunable by the magnetic field applied on the patterned magnetic Fe/Pt heterostructures. These findings thus promise novel approaches to fabricate powerful and tunable THz emitters based on magnetic heterostructure. △ Less

Submitted 10 July, 2016; originally announced July 2016.

Journal ref: Advanced Optical Materials 4 (12), 1944-1949

Anomalous Hall Effect in Variable Range Hop** Regime: Unusual Scaling Law and Sign Reversal with Temperature

Authors: R. M. Qiao, S. S. Yan, T. S. Xu, M. W. Zhao, Y. X. Chen, G. L. Liu, W. L. Yang, R. K. Zheng, L. M. Mei

Abstract: Anomalous Hall effect (AHE) is important for understanding the topological properties of electronic states, and provides insight into the spin-polarized carriers of magnetic materials. AHE has been extensively studied in metallic, but not variable-range-hop** (VRH), regime. Here we report the experiments of both anomalous and ordinary Hall effect (OHE) in Mott and Efros VRH regimes. We found unu… ▽ More Anomalous Hall effect (AHE) is important for understanding the topological properties of electronic states, and provides insight into the spin-polarized carriers of magnetic materials. AHE has been extensively studied in metallic, but not variable-range-hop** (VRH), regime. Here we report the experiments of both anomalous and ordinary Hall effect (OHE) in Mott and Efros VRH regimes. We found unusual scaling law of the AHE coefficient $Rah=aRxx^b$ with b>2, contrasting the OHE coefficient $Roh=cRxx^d$ with d<1. More strikingly, the sign of AHE coefficient changes with temperature with specific electron densities. △ Less

Submitted 22 June, 2014; originally announced June 2014.

On the roles of graphene oxide do** for enhanced supercurrent in MgB2 based superconductors

Authors: W. K. Yeoh, X. Y. Cui, B. Gault, K. S. B. De Silva, X. Xu, H. W. Liu, H. W. Yen, D. Wong, P. Bao, D. J. Larson, I. Martin, W. X. Li, R. K. Zheng, X. L. Wang, S. X. Dou, S. P. Ringer

Abstract: Due to their graphene-like properties after oxygen reduction, incorporation of graphene oxide (GO) sheets into correlated-electron materials offers a new pathway for tailoring their properties. Fabricating GO nanocomposites with polycrystalline MgB2 superconductors leads to an order of magnitude enhancement of the supercurrent at 5 K/8 T and 20 K/4 T. Herein, we introduce a novel experimental appr… ▽ More Due to their graphene-like properties after oxygen reduction, incorporation of graphene oxide (GO) sheets into correlated-electron materials offers a new pathway for tailoring their properties. Fabricating GO nanocomposites with polycrystalline MgB2 superconductors leads to an order of magnitude enhancement of the supercurrent at 5 K/8 T and 20 K/4 T. Herein, we introduce a novel experimental approach to overcome the formidable challenge of performing quantitative microscopy and microanalysis of such composites, so as to unveil how GO do** influences the structure and hence the material properties. Atom probe microscopy and electron microscopy were used to directly image the GO within the MgB2, and we combined these data with computational simulations to derive the property-enhancing mechanisms. Our results reveal synergetic effects of GO, namely, via localized atomic (carbon and oxygen) do** as well as texturing of the crystals, which provide both inter and intra granular flux pinning. This study opens up new insights into how low-dimensional nanostructures can be integrated into composites to modify the overall properties, using a methodology amenable to a wide range of applications. △ Less

Submitted 19 May, 2014; originally announced May 2014.

Journal ref: Nanoscale, 2014,6, 6166-6172

Accurate expansions of internal energy and specific heat of critical two-dimensional Ising model with free boundaries

Authors: Xintian Wu, Ru Zheng, Nickolay Izmailian, Wenan Guo

Abstract: The bond-propagation (BP) algorithm for the specific heat of the two dimensional Ising model is developed and that for the internal energy is completed. Using these algorithms, we study the critical internal energy and specific heat of the model on the square lattice and triangular lattice with free boundaries. Comparing with previous works [X.-T. Wu {\it et al} Phys. Rev. E {\bf 86}, 041149 (2012… ▽ More The bond-propagation (BP) algorithm for the specific heat of the two dimensional Ising model is developed and that for the internal energy is completed. Using these algorithms, we study the critical internal energy and specific heat of the model on the square lattice and triangular lattice with free boundaries. Comparing with previous works [X.-T. Wu {\it et al} Phys. Rev. E {\bf 86}, 041149 (2012) and Phys. Rev. E {\bf 87}, 022124 (2013)], we reach much higher accuracy ($10^{-26}$) of the internal energy and specific heat, compared to the accuracy $10^{-11}$ of the internal energy and $10^{-9}$ of the specific heat reached in the previous works. This leads to much more accurate estimations of the edge and corner terms. The exact values of some edge and corner terms are therefore conjectured. The accurate forms of finite-size scaling for the internal energy and specific heat are determined for the rectangle-shaped square lattice with various aspect ratios and various shaped triangular lattice. For the rectangle-shaped square and triangular lattices and the triangle-shaped triangular lattice, there is no logarithmic correction terms of order higher than 1/S, with S the area of the system. For the triangular lattice in rhombus, trapezoid and hexagonal shapes, there exist logarithmic correction terms of order higher than 1/S for the internal energy, and logarithmic correction terms of all orders for the specific heat. △ Less

Submitted 9 August, 2013; originally announced August 2013.

Comments: arXiv admin note: text overlap with arXiv:1212.2023, arXiv:1207.4540

Journal ref: J. Stat. Phys. 155, 106 (2014)

Co-development of significant elastic and reversible plastic deformation in nanowires

Authors: Peite Bao, Yanbo Wang, Xiangyuan Cui, Qiang Gao, Hongwei Liu, Wai Kong Yeoh, Hung-Wei Yen, Xiaozhou Liao, Sichao Du, H. Hoe Tan, Chennupati Jagadish, ** Zou, Simon P. Ringer, Rongkun Zheng

Abstract: When a material is subjected to an applied stress, the material will experience recoverable elastic deformation followed by permanent plastic deformation at the point when the applied stress exceeds the yield stress of the material. Microscopically, the onset of the plasticity usually indicates the activation of dislocation motion, which is considered to be the primary mechanism of plastic deforma… ▽ More When a material is subjected to an applied stress, the material will experience recoverable elastic deformation followed by permanent plastic deformation at the point when the applied stress exceeds the yield stress of the material. Microscopically, the onset of the plasticity usually indicates the activation of dislocation motion, which is considered to be the primary mechanism of plastic deformation. Once plastic deformation is initiated, further elastic deformation is negligible owing to the limited increase in the flow stress caused by work hardening. Here we present experimental evidence and quantitative analysis of simultaneous development of significant elastic deformation and dislocation-based plastic deformation in single crystal GaAs nanowires (NWs) under bending deformation up to a total strain of ~ 6%. The observation is in sharp contrast to the previous notions regarding the deformation modes. Most of the plastic deformation recovers spontaneously when the external stress is released, and therefore resembles an elastic deformation process. △ Less

Submitted 12 March, 2013; originally announced March 2013.

One-dimensional energy spectra in three-dimensional incompressible homogeneous isotropic turbulence

Authors: Ran Zheng, Wang Yao-yao, Yuan Xing-jie

Abstract: The paper investigates the detailed features of one-dimensional energy spectra in three-dimensional isotropic turbulence, based on the exact solution of Karman-Howarth equation. Particular interest will be paid on the degree to which spectral scaling can lead the spectral data to be collapsed. The theory appears to be consistent with the wealth of experimental data (G.Comte-Bellot and S. Corrsin,… ▽ More The paper investigates the detailed features of one-dimensional energy spectra in three-dimensional isotropic turbulence, based on the exact solution of Karman-Howarth equation. Particular interest will be paid on the degree to which spectral scaling can lead the spectral data to be collapsed. The theory appears to be consistent with the wealth of experimental data (G.Comte-Bellot and S. Corrsin, 1971) at least in low Taylor microscale Reynolds number. △ Less

Submitted 26 January, 2013; originally announced January 2013.

Comments: 13 pages, 4figures

Gate voltage controlled electronic transport through a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator

Authors: K. H. Zhang, Z. C. Wang, Q. R. Zheng, G. Su

Abstract: We investigate the electronic transport properties of a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator with a gate voltage exerted on the normal segment. It is found that the conductance oscillates with the width of normal segment and gate voltage, and the maximum of conductance gradually decreases while the minimum of conductance approaches zero as the width inc… ▽ More We investigate the electronic transport properties of a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator with a gate voltage exerted on the normal segment. It is found that the conductance oscillates with the width of normal segment and gate voltage, and the maximum of conductance gradually decreases while the minimum of conductance approaches zero as the width increases. The conductance can be controlled by tuning the gate voltage like a spin field-effect transistor. It is found that the magnetoresistance ratio can be very large, and can also be negative owing to the anomalous transport. In addition, when there exists a magnetization component in the surface plane, it is shown that only the component parallel to the junction interface has an influence on the conductance. △ Less

Submitted 27 November, 2012; originally announced November 2012.

Comments: 7 pages,8 figures

Journal ref: Phys.Rev.B 86,174416(2012)

In-plane antiferromagnetism in $Na_{0.5}CoO_2$ induced by $Sb_{Co}$ dopants

Authors: M. H. N. Assadi, S. Li, R. K. Zheng, S. P. Ringer, A. B. Yu

Abstract: $Na_xCoO_2$ has a fascinating and complex magnetic phase diagram that can be further manipulated by do**. Here, we investigated the effect of electron do** on the magnetic coupling among $Co^{4+}$ ions in $Na_xCoO_2$ using density functional theory based on Hartree-Fock hybrid functional. We found that electron do** through substitutional $Sb_{Co}… ▽ More $Na_xCoO_2$ has a fascinating and complex magnetic phase diagram that can be further manipulated by do**. Here, we investigated the effect of electron do** on the magnetic coupling among $Co^{4+}$ ions in $Na_xCoO_2$ using density functional theory based on Hartree-Fock hybrid functional. We found that electron do** through substitutional $Sb_{Co}$ dopants flip the in-plane ferromagnetic coupling among $Co^{4+}$ ions in the undoped compound to antiferromagnetic. Electron do** through interstitial $Cu_{Int}$, however, does not have a similar effect as $Cu_{Int}$ dopant leaves the compound ferromagnetic, just like the case of the undoped compound. The results demonstrate the critical dependence of magnetic phase in $Na_{0.5}CoO_2$ on the dopant and its incorporation site. △ Less

Submitted 10 October, 2019; v1 submitted 26 November, 2012; originally announced November 2012.

Comments: 5 pages, 5 figures

Electric Field Control of the Verwey Transition and Induced Magnetoelectric Effect in Magnetite

Authors: Jared J. I. Wong, Adrian G. Swartz, Ren**g Zheng, Wei Han, Roland K. Kawakami

Abstract: We incorporate single crystal Fe$_3$O$_4$ thin films into a gated device structure and demonstrate the ability to control the Verwey transition with static electric fields. The Verwey transition temperature ($T_V$) increases for both polarities of the electric field, indicating the effect is not driven by changes in carrier concentration. Energetics of induced electric polarization and/or strain w… ▽ More We incorporate single crystal Fe$_3$O$_4$ thin films into a gated device structure and demonstrate the ability to control the Verwey transition with static electric fields. The Verwey transition temperature ($T_V$) increases for both polarities of the electric field, indicating the effect is not driven by changes in carrier concentration. Energetics of induced electric polarization and/or strain within the Fe$_3$O$_4$ film provide a possible explanation for this behavior. Electric field control of the Verwey transition leads directly to a large magnetoelectric effect with coefficient of 585 pT m/V. △ Less

Submitted 29 February, 2012; originally announced February 2012.

Direct observation of local K variation and its correlation to electronic inhomogeneity in (Ba1-xKx)Fe2As2 Pnictide

Authors: W. K. Yeoh, B. Gault, X. Y. Cui, C. Zhu, M. P. Moody, L. Li, R. K. Zheng, W. X Li, X. L. Wang, S. X. Dou, C. T. Lin, S. P. Ringer

Abstract: Local fluctuations in the distribution of dopant atoms are a suspected cause of nanoscale electronic disorder or phase separation observed within the pnictide superconductors. Atom probe tomography results present the first direct observations of dopant nano-clustering in a K-doped 122-phase pnictides. First-principles calculations suggest the coexistence of static magnetism and superconductivity… ▽ More Local fluctuations in the distribution of dopant atoms are a suspected cause of nanoscale electronic disorder or phase separation observed within the pnictide superconductors. Atom probe tomography results present the first direct observations of dopant nano-clustering in a K-doped 122-phase pnictides. First-principles calculations suggest the coexistence of static magnetism and superconductivity on a lattice parameter length scale over a large range of do** concentrations. Collectively, our results provide evidence for a mixed scenario of phase coexistence and phase separation originating from variation of dopant atom experiments distroibutions. △ Less

Submitted 18 May, 2011; v1 submitted 3 April, 2011; originally announced April 2011.

Comments: 4 pages, 4 figures and 1 table, accepted by Physical Review Letter 2011

Journal ref: Phys. Rev. Lett. 106, 247002 (2011)

Metamaterials Mimicking Dynamic Spacetime, D-brane and Noncommutativity in String Theory

Authors: Rong-Xin Miao, Rui Zheng, Miao Li

Abstract: We propose an executable scheme to mimic the expanding cosmos in 1+2 dimensions in laboratory. Furthermore, we develop a general procedure to use nonlinear metamaterials to mimic D-brane and noncommutativity in string theory. We propose an executable scheme to mimic the expanding cosmos in 1+2 dimensions in laboratory. Furthermore, we develop a general procedure to use nonlinear metamaterials to mimic D-brane and noncommutativity in string theory. △ Less

Submitted 3 February, 2011; v1 submitted 31 May, 2010; originally announced May 2010.

Comments: 15 pages, 2 figures

Report number: USTC-ICTS-10-24

Journal ref: Phys.Lett.B696:550-555,2011

Graphene do** to enhance flux pinning and supercurrent carrying ability in magnesium diboride superconductor

Authors: X. Xu, S. X. Dou, X. L. Wang, J. H. Kim, J. A. Stride, M. Choucair, W. K. Yeoh, R. K. Zheng, S. P. Ringer

Abstract: It has been shown that graphene do** is sufficient to lead to an improvement in the critical current density - field performance (Jc(B)), with little change in the transition temperature in MgB2. At 3.7 at% graphene do** of MgB2 an optimal enhancement in Jc(B) was reached by a factor of 30 at 5 K and 10 T, compared to the un-doped sample. The results suggested that effective carbon substitut… ▽ More It has been shown that graphene do** is sufficient to lead to an improvement in the critical current density - field performance (Jc(B)), with little change in the transition temperature in MgB2. At 3.7 at% graphene do** of MgB2 an optimal enhancement in Jc(B) was reached by a factor of 30 at 5 K and 10 T, compared to the un-doped sample. The results suggested that effective carbon substitutions by grapheme, 2D nature of grapheme and the strain effect induced by difference thermal coefficient between single grapheme sheet and MgB2 superconductor may play an important role in flux pinning enhancement. △ Less

Submitted 27 January, 2010; originally announced January 2010.

Stable two-dimensional ferromagnets made of regular single-layered lattices of single-molecule nanomagnets on substrates

Authors: Rui Zheng, Bang-Gui Liu

Abstract: We propose that stable two-dimensional (2D) ferromagnets can be made of regular single-layered lattices of single-molecule nanomagnets with enough uniaxial magnetic anisotropy on appropriate substrates by controlling the inter-nanomagnet magnetic interaction. Our Monte Carlo simulated results show that such ideal 2D ferromagnets are thermodynamically stable when the anisotropy is strong enough.… ▽ More We propose that stable two-dimensional (2D) ferromagnets can be made of regular single-layered lattices of single-molecule nanomagnets with enough uniaxial magnetic anisotropy on appropriate substrates by controlling the inter-nanomagnet magnetic interaction. Our Monte Carlo simulated results show that such ideal 2D ferromagnets are thermodynamically stable when the anisotropy is strong enough. If the anisotropy energy equals 80 K, approximately that of the Mn12, the T_c varies from zero to 15 K depending on different inter-nanomagnet coupling constants. Such stable spin systems, experimentally accessible, should be promising for information applications. △ Less

Submitted 6 June, 2009; originally announced June 2009.

Journal ref: J. Appl. Phys 106, 054316 (2009)

Enhanced Ferromagnetic Ordering in GdBaCo$_{2}$O$_{5.5+δ}$ Films on SrTiO3 (001) Substrate

Authors: G. Y. Wang, X. Y. Zhou, R. K. Zheng, Y. M. Hu, H. L. W. Chan, Y. Wang

Abstract: The authors investigated the structure and properties of GdBaCo$_{2}$O$_{5.5+δ}$ thin films epitaxially grown on SrTiO$_{3}$ (001) single crystal substrates. The thin films were found to have a notable remnant magnetization above room temperature, which is much higher than that observed in bulk material. Transmission electron microscopy and x-ray diffraction patterns reveal that phase separation… ▽ More The authors investigated the structure and properties of GdBaCo$_{2}$O$_{5.5+δ}$ thin films epitaxially grown on SrTiO$_{3}$ (001) single crystal substrates. The thin films were found to have a notable remnant magnetization above room temperature, which is much higher than that observed in bulk material. Transmission electron microscopy and x-ray diffraction patterns reveal that phase separation occurs in these films, and the phase responsible for the enhanced ferromagnetic order is $a$-oriented. The enhanced ferromagnetic order is attributed to the enhanced orbital order of Co$^{3+}$ in CoO$_{5}$ pyramids, and the disappearance of ferromagnetic to antiferromagnetic transition is explained the stabilization of higher spin state of Co$^{3+}$ in CoO$_{6}$ octahedra. △ Less

Submitted 10 January, 2009; originally announced January 2009.

Comments: 4 pages, 4 figures

In Vitro Studies of Cells Grown on the Superconductor PrOxFeAs

Authors: Shaoguang Yang, Yuxuan Xie, Wenrong Yang, Rongkun Zheng, Frankie Stevens, Emine Korkmaz, Anthony S. Weiss, Simon P. Ringer, Filip Braet

Abstract: The recent discovery of arsenic-based high temperature superconductors has reignited interest in the study of superconductor : biological interfaces. However, the new superconductor materials involve the chemistry of arsenic, their toxicity remain unclear [ Nature, 2008, 452(24):922]. In this study the possible adverse effects of this new family of superconductors on cells have been examined. Ce… ▽ More The recent discovery of arsenic-based high temperature superconductors has reignited interest in the study of superconductor : biological interfaces. However, the new superconductor materials involve the chemistry of arsenic, their toxicity remain unclear [ Nature, 2008, 452(24):922]. In this study the possible adverse effects of this new family of superconductors on cells have been examined. Cell culture studies in conjunction with microscopy and viability assays were employed to examine the influence of arsenic-based superconductor PrOxFeAs (x=0.75) material in vitro. Imaging data revealed that cells were well adhered and spread on the surface of the superconductor. Furthermore, cytotoxicity studies showed that cells were unaffected during the time-course of the experiments, providing support for the biocompatibility aspects of PrOxFeAs-based superconductor material. △ Less

Submitted 12 September, 2008; originally announced September 2008.

Comments: Are the FeAs based superconductors toxic ?

Thermal strain-induced enhancement of electromagnetic properties in SiC-MgB2 composites

Authors: R. Zeng S. X. Dou, L. Lu, W. X. Li, J. H. Kim, P. Munroe, R. K. Zheng, S. P. Ringer

Abstract: Strain engineering has been used to modify materials properties in ferroelectric, superconducting, and ferromagnetic thin films. The advantage of strain engineering is that it can achieve unexpected enhancement in certain properties, such as an increase in ferroelectric critical temperature, Tc, by 300 to 500K, with a minimum detrimental effect on the intrinsic properties of the material. The st… ▽ More Strain engineering has been used to modify materials properties in ferroelectric, superconducting, and ferromagnetic thin films. The advantage of strain engineering is that it can achieve unexpected enhancement in certain properties, such as an increase in ferroelectric critical temperature, Tc, by 300 to 500K, with a minimum detrimental effect on the intrinsic properties of the material. The strain engineering has been largely applied to the materials in thin film form, where the strain is generated as a result of lattice mismatch between the substrate and component film or between layers in multilayer structures. Here, we report the observation of residual thermal stress/strain in dense SiC-MgB2 superconductor composites prepared by a diffusion method. We demonstrate that the thermal strain caused by the different thermal expansion coefficients between the MgB2 and SiC phases is responsible for the significant improvement in the critical current density, Jc, the irreversibility field, Hirr, and the upper critical field, Hc2, in the SiC-MgB2 composite where the carbon substitution level is low. In contrast to the common practice of improving the Jc and Hc2 of MgB2 through chemical substitution, by taking advantage of residual thermal strains we are able to design a composite, which shows only a small drop in Tc and little increase in resistivity, but a significant improvement over the Jc and Hc2 of MgB2. The present findings open up a new direction for manipulation of materials properties through strain engineering for materials in various forms. △ Less

Submitted 7 August, 2008; originally announced August 2008.

A Study of the Evaporative Deposition Process: Pipes and Truncated Transport Dynamics

Authors: Rui Zheng

Abstract: We consider contact line deposition and pattern formation of a pinned evaporating thin drop. We identify and focus on the transport dynamics truncated by the maximal concentration, proposed by Dupont, as the single deposition mechanism. The truncated process, formalized as "pipe models", admits a characteristic moving shock front solution that has a robust functional form and depends only on loc… ▽ More We consider contact line deposition and pattern formation of a pinned evaporating thin drop. We identify and focus on the transport dynamics truncated by the maximal concentration, proposed by Dupont, as the single deposition mechanism. The truncated process, formalized as "pipe models", admits a characteristic moving shock front solution that has a robust functional form and depends only on local conditions. By applying the models, we solve the deposition process and describe the deposit density profile in different asymptotic regimes. In particular, near the contact line the density profile follows a scaling law that is proportional to the square root of the concentration ratio, and the maximal deposit density/thickness occurs at about 2/3 of the total drying time for uniform evaporation and 1/2 for diffusion-controlled evaporation. Away from the contact line, we for the first time identify the power-law decay of the deposit profile with respect to the radial distance. In comparison, our work is consistent with and extends previous results. We also predict features of the depinning process and multiple-ring patterns within Dupont model, and our predictions are consistent with empirical evidence. △ Less

Submitted 2 December, 2007; originally announced December 2007.

Comments: 25 pages, 22 figures, submitted to Physical Review E

Feasibility of Large Free-standing Liquid Films in Space

Authors: Rui Zheng, Thomas A. Witten

Abstract: We consider the feasibility of large-scale free-standing thin liquid film experiment in the space environment as a new realization to study two-dimensional hydrodynamics. We identify material and environmental criteria necessary to avoid freezing, evaporation, chemical degradation, and spontaneous collapse of the film. These criteria pose no obstacles to achieving films of kilometer scale and li… ▽ More We consider the feasibility of large-scale free-standing thin liquid film experiment in the space environment as a new realization to study two-dimensional hydrodynamics. We identify material and environmental criteria necessary to avoid freezing, evaporation, chemical degradation, and spontaneous collapse of the film. These criteria pose no obstacles to achieving films of kilometer scale and lifetime of many months, with attainable Reynolds number up to 10^7. However, impacts from meteoroids pose a serious threat to the film, and require substantial shielding or unproven self-healing properties in the film. Current theoretical and experimental studies of two-dimensional turbulence are briefly reviewed. We also describe a specific candidate liquid for the film. △ Less

Submitted 11 December, 2006; v1 submitted 29 June, 2006; originally announced June 2006.

Comments: 13 pages

Journal ref: Phys. Rev. E 74, 051602 (2006)

This paper as been withdrawn

Authors: R. K. Zheng

Abstract: This paper as been withdrawn. This paper as been withdrawn. This paper as been withdrawn. This paper as been withdrawn. This paper as been withdrawn. This paper as been withdrawn. This paper as been withdrawn. This paper as been withdrawn. This paper as been withdrawn. This paper as been withdrawn. This paper as been withdrawn. This paper as been withdrawn. △ Less

Submitted 4 February, 2008; v1 submitted 19 December, 2005; originally announced December 2005.