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Random organization and non-equilibrium hyperuniform fluids on a sphere
Authors:
Yusheng Lei,
Ning Zheng,
Ran Ni
Abstract:
Random organizing hyperuniform fluid induced by reciprocal activation is a non-equilibrium fluid with vanishing density fluctuations at large length scales like crystals. Here we extend this new state of matter to a closed manifold, namely a spherical surface. We find that the random organization on a spherical surface behaves similar to that in two dimensional Euclidean space, and the absorbing t…
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Random organizing hyperuniform fluid induced by reciprocal activation is a non-equilibrium fluid with vanishing density fluctuations at large length scales like crystals. Here we extend this new state of matter to a closed manifold, namely a spherical surface. We find that the random organization on a spherical surface behaves similar to that in two dimensional Euclidean space, and the absorbing transition on a sphere also belongs to the conserved directed percolation universality class. Moreover, the reciprocal activation can also induce a non-equilibrium hyperuniform fluid on a sphere. The spherical structure factor at the absorbing transition and the non-equilibrium hyperuniform fluid phases are scaled as $S(l \rightarrow 0) \sim (l/R)^{0.45}$ and $S(l \rightarrow 0) \sim l(l+1)/R^2$, respectively, which are both hyperuniform according to the definition of hyperuniformity on a sphere with $l$ the wave number and $R$ the radius of the spherical surface. We also consider the impact of inertia in realistic hyperuniform fluids, and it is found only adding an extra length-scale, above which hyperuniform scaling appears. Our finding suggests a new method for creating non-equilibrium hyperuniform fluids on closed manifolds to avoid boundary effects.
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Submitted 7 August, 2023; v1 submitted 25 April, 2023;
originally announced April 2023.
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Flexoelectricity-stabilized ferroelectric phase with enhanced reliability in ultrathin La:HfO2 films
Authors:
Peijie Jiao,
Hao Cheng,
Jiayi Li,
Hongying Chen,
Zhiyu Liu,
Zhongnan Xi,
Wenjuan Ding,
Xingyue Ma,
Jian Wang,
Ningchong Zheng,
Yuefeng Nie,
Yu Deng,
Laurent Bellaiche,
Yurong Yang,
Di Wu
Abstract:
Doped HfO2 thin films exhibit robust ferroelectric properties even for nanometric thicknesses, are compatible with current Si technology and thus have great potential for the revival of integrated ferroelectrics. Phase control and reliability are core issues for their applications. Here we show that, in (111)-oriented 5%La:HfO2 (HLO) epitaxial thin films deposited on (La0.3Sr0.7)(Al0.65Ta0.35)O3 s…
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Doped HfO2 thin films exhibit robust ferroelectric properties even for nanometric thicknesses, are compatible with current Si technology and thus have great potential for the revival of integrated ferroelectrics. Phase control and reliability are core issues for their applications. Here we show that, in (111)-oriented 5%La:HfO2 (HLO) epitaxial thin films deposited on (La0.3Sr0.7)(Al0.65Ta0.35)O3 substrates, the flexoelectric effect, arising from the strain gradient along the films normal, induces a rhombohedral distortion in the otherwise Pca21 orthorhombic structure. Density functional calculations reveal that the distorted structure is indeed more stable than the pure Pca21 structure, when applying an electric field mimicking the flexoelectric field. This rhombohedral distortion greatly improves the fatigue endurance of HLO thin films by further stabilizing the metastable ferroelectric phase against the transition to the thermodynamically stable non-polar monoclinic phase during repetitive cycling. Our results demonstrate that the flexoelectric effect, though negligibly weak in bulk, is crucial to optimize the structure and properties of doped HfO2 thin films with nanometric thicknesses for integrated ferroelectric applications.
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Submitted 22 February, 2023;
originally announced February 2023.
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Observation of uniaxial strain tuned spin cycloid in a freestanding BiFeO3 film
Authors:
Zhe Ding,
Yumeng Sun,
Ningchong Zheng,
Xingyue Ma,
Mengqi Wang,
Yipeng Zang,
Pei Yu,
Pengfei Wang,
Ya Wang,
Yurong Yang,
Yuefeng Nie,
Fazhan Shi,
Jiangfeng Du
Abstract:
Non-collinear spin order that breaks space inversion symmetry and allows efficient electric-field control of magnetism makes BiFeO$_3$ a promising candidate for applications in low-power spintronic devices. Epitaxial strain effects have been intensively studied and exhibit significant modulation of the magnetic order in BiFeO$_3$, but tuning its spin structure with continuously varied uniaxial str…
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Non-collinear spin order that breaks space inversion symmetry and allows efficient electric-field control of magnetism makes BiFeO$_3$ a promising candidate for applications in low-power spintronic devices. Epitaxial strain effects have been intensively studied and exhibit significant modulation of the magnetic order in BiFeO$_3$, but tuning its spin structure with continuously varied uniaxial strain is still lacking up to date. Here, we apply \emph{in situ} uniaxial strain to a freestanding BiFeO$_3$ film and use scanning NV microscope to image the nanoscale magnetic order in real-space. The strain is continuously increased from 0\% to 1.5\% and four images under different strains are acquired during this period. The images show that the spin cycloid tilts by $\sim 12.6^\circ$ when strain approaches 1.5\%. A first principle calculation has been processed to show that the tilting is energetically favorable under such strain. Our \emph{in situ} strain applying method in combination with scanning NV microscope real-space imaging ability paves a new way in studying the coupling between magnetic order and strain in BiFeO$_3$ films.
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Submitted 17 October, 2022;
originally announced October 2022.
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Discovery of room temperature ferromagnetism in metal-free organic semiconductors
Authors:
Qinglin Jiang,
Jiang Zhang,
Zhongquan Mao,
Yao Yao,
Duokai Zhao,
Wenqiang Zhang,
Jiadong Zhou,
Nan Zheng,
Huanhuan Zhang,
Manlin Zhao,
Yong Wang,
Xiaolong Li,
Dehua Hu,
Yuguang Ma
Abstract:
Creating magnetic semiconductors that work at warm circumstance is still a great challenge in the physical sciences. Here, we report the discovery of ferromagnetism in the metal-free perylene diimide semiconductor, whose Curie temperature is higher than 400 Kelvin. A solvothermal approach is used to reduce and dissolve the rigid-backbone perylene diimide crystallites, and radical anion aggregates…
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Creating magnetic semiconductors that work at warm circumstance is still a great challenge in the physical sciences. Here, we report the discovery of ferromagnetism in the metal-free perylene diimide semiconductor, whose Curie temperature is higher than 400 Kelvin. A solvothermal approach is used to reduce and dissolve the rigid-backbone perylene diimide crystallites, and radical anion aggregates were fabricated by the subsequent self-assembly and oxidation process. Magnetic measurements exhibit the ferromagnetic ordering with the saturated magnetization of 0.48 $μ_{\rm B}$ per molecule and the appreciable magnetic anisotropy. X-ray magnetic circular dichroism spectra suggest the ferromagnetism stems from $π$ orbitals of radicals. Our findings unambitiously demonstrate the long-range ferromagnetic ordering can survive at room temperature in organic semiconductors, although which are intuitively regarded to be nonmagnetic.
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Submitted 28 July, 2019; v1 submitted 18 June, 2019;
originally announced June 2019.
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Bouncing behavior and dissipative characterization of a chain-filled granular damper
Authors:
Cheng Xu,
Ning Zheng,
Liang-sheng,
Qing-fan Shi
Abstract:
We have experimentally investigated the bouncing behavior and dam** performance of a container partially filled with granular chains, namely a chain-filled damper. The motion of the chain-filled damper, recorded by a particle tracing technology, demonstrates that the granular chains can efficiently absorb the collisional energy of the damper. We extract both the restitution coefficient of the fi…
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We have experimentally investigated the bouncing behavior and dam** performance of a container partially filled with granular chains, namely a chain-filled damper. The motion of the chain-filled damper, recorded by a particle tracing technology, demonstrates that the granular chains can efficiently absorb the collisional energy of the damper. We extract both the restitution coefficient of the first collision and the total flight time to characterize the dissipation ability of the damper. Two containers and three types of granular chains, different in size, stiffness and restitution coefficient, are used to examine the experimental results. We find that the restitution coefficient of the first collision of a single-chain-filled damper can linearly tend to vanish with increasing the chain length and obtain a minimum filling mass required to cease the container at the first collision (no rebound). When the strong impact occurs, the collisional absorption efficiency of a chain-filled damper is superior to a monodisperse-particle-filled damper. Furthermore, the longer the chains are, the better the dissipative effect is.
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Submitted 25 March, 2019;
originally announced March 2019.
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Dynamics of quasi-static collapse process of a binary granular column
Authors:
Hongwei Zhu,
Yaodong Feng,
Danfeng Lu,
Yahya Sandali,
Bin Li,
Gang Sun,
Ning Zheng,
Qingfan Shi
Abstract:
The dynamical behavior of the column that made up binary granular beads is investigated systematically by tracking the displacement of particles in the collapse process. An experimental setup is first devised to control the quasi-static collapse of a granular column, and then observe the trajectories of tracer particles by using an industrial camera controlled by the image acquisition program. It…
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The dynamical behavior of the column that made up binary granular beads is investigated systematically by tracking the displacement of particles in the collapse process. An experimental setup is first devised to control the quasi-static collapse of a granular column, and then observe the trajectories of tracer particles by using an industrial camera controlled by the image acquisition program. It is found that there exist two zones in column: a sliding region in which particles are moving in a layered structure; a static region within which particles are stationary. According to this analytical result, a dynamical model is developed to predict the trajectory evolution of particles in the space-time. The calculating result for the trajectories of particles on the selected layers is well consistent with the experimental observation.
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Submitted 25 March, 2019;
originally announced March 2019.
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Segregation patterns in binary mixtures with same layer-thicknesses under vertical vibration
Authors:
Yahya Sandali,
Cheng Xu,
Ning Zheng,
Gang Sun,
Qingfan Shi
Abstract:
Inspired by the theoretical prediction [Phys. Rev. Lett. 86, 3423 (2001)] and the disputed experimental results [Phys. Rev. Lett. 89, 189601(2002), Phys. Rev. Lett. 90, 014302 (2003)], we systematically investigate the pattern of binary mixtures consisting of same layer-thickness under vertical vibration. Various kinds of mixtures with different diameters and densities particles are used to observ…
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Inspired by the theoretical prediction [Phys. Rev. Lett. 86, 3423 (2001)] and the disputed experimental results [Phys. Rev. Lett. 89, 189601(2002), Phys. Rev. Lett. 90, 014302 (2003)], we systematically investigate the pattern of binary mixtures consisting of same layer-thickness under vertical vibration. Various kinds of mixtures with different diameters and densities particles are used to observe the separation regime. It is found that these mixtures behave like five kinds of segregation patterns for different driving control parameters, i.e., Brazil nut (BN), reversed Brazil nut (RBN), Mixed states, light-BN (LBN), and light-RBN (LRBN), where the latter two regimes are neither purely segregated nor completely mixed states. Not only that, but LBN (LRBN) is observed to be the transition path from BN (RBN) to Mixed state. Moreover, BN phenomenon takes place in the area of low density ratio and found to be independent of layer structure, while RBN is sensitive to the layer structure and occurs at the large density ratio but lower diameter ratio. Our result may be helpful for the establishment of theory about the segregation and mixing of granular mixtures.
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Submitted 24 January, 2017;
originally announced January 2017.
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Coherent population transfer between weakly-coupled states in a ladder-type superconducting qutrit
Authors:
H. K. Xu,
W. Y. Liu,
G. M. Xue,
F. F. Su,
H. Deng,
Ye Tian,
D. N. Zheng,
Siyuan Han,
Y. P. Zhong,
H. Wang,
Yu-Xi Liu,
S. P. Zhao
Abstract:
Stimulated Raman adiabatic passage (STIRAP) offers significant advantages for coherent population transfer between un- or weakly-coupled states and has the potential of realizing efficient quantum gate, qubit entanglement, and quantum information transfer. Here we report on the realization of STIRAP in a superconducting phase qutrit - a ladder-type system in which the ground state population is co…
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Stimulated Raman adiabatic passage (STIRAP) offers significant advantages for coherent population transfer between un- or weakly-coupled states and has the potential of realizing efficient quantum gate, qubit entanglement, and quantum information transfer. Here we report on the realization of STIRAP in a superconducting phase qutrit - a ladder-type system in which the ground state population is coherently transferred to the second-excited state via the dark state subspace. The result agrees well with the numerical simulation of the master equation, which further demonstrates that with the state-of-the-art superconducting qutrits the transfer efficiency readily exceeds $99\%$ while kee** the population in the first-excited state below $1\%$. We show that population transfer via STIRAP is significantly more robust against variations of the experimental parameters compared to that via the conventional resonant $π$ pulse method. Our work opens up a new venue for exploring STIRAP for quantum information processing using the superconducting artificial atoms.
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Submitted 7 August, 2015;
originally announced August 2015.
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Quantum Phase Diffusion in a Small Underdamped Josephson Junction
Authors:
H. F. Yu,
X. B. Zhu,
Z. H. Peng,
Ye Tian,
D. J. Cui,
G. H. Chen,
D. N. Zheng,
X. N. **g,
Li Lu,
S. P. Zhao,
Siyuan Han
Abstract:
Quantum phase diffusion in a small underdamped Nb/AlO$_x$/Nb junction ($\sim$ 0.4 $μ$m$^2$) is demonstrated in a wide temperature range of 25-140 mK where macroscopic quantum tunneling (MQT) is the dominant escape mechanism. We propose a two-step transition model to describe the switching process in which the escape rate out of the potential well and the transition rate from phase diffusion to the…
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Quantum phase diffusion in a small underdamped Nb/AlO$_x$/Nb junction ($\sim$ 0.4 $μ$m$^2$) is demonstrated in a wide temperature range of 25-140 mK where macroscopic quantum tunneling (MQT) is the dominant escape mechanism. We propose a two-step transition model to describe the switching process in which the escape rate out of the potential well and the transition rate from phase diffusion to the running state are considered. The transition rate extracted from the experimental switching current distribution follows the predicted Arrhenius law in the thermal regime but is greatly enhanced when MQT becomes dominant.
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Submitted 18 August, 2011; v1 submitted 11 January, 2011;
originally announced January 2011.
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Spin-Polarized Semiconductor Induced by Magnetic Impurities in Graphene
Authors:
Maria Daghofer,
Nan Zheng,
Adriana Moreo
Abstract:
Magnetic impurities adsorbed on graphene are coupled magnetically via the itinerant electrons. This interaction opens a gap in the band structure of graphene. The result strongly depends on how the magnetic impurities are distributed. While random do** produces a semiconductor, if all or most impurities are located in the same sublattice, the spin degeneracy is removed and a spin-polarized semic…
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Magnetic impurities adsorbed on graphene are coupled magnetically via the itinerant electrons. This interaction opens a gap in the band structure of graphene. The result strongly depends on how the magnetic impurities are distributed. While random do** produces a semiconductor, if all or most impurities are located in the same sublattice, the spin degeneracy is removed and a spin-polarized semiconductor arises.
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Submitted 4 October, 2010; v1 submitted 20 May, 2010;
originally announced May 2010.
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Quantum and classical resonant escapes of a strongly-driven Josephson junction
Authors:
H. F. Yu,
X. B. Zhu,
Z. H. Peng,
W. H. Cao,
D. J. Cui,
Ye Tian,
G. H. Chen,
D. N. Zheng,
X. N. **g,
Li Lu,
S. P. Zhao,
Siyuan Han
Abstract:
The properties of phase escape in a dc SQUID at 25 mK, which is well below quantum-to-classical crossover temperature $T_{cr}$, in the presence of strong resonant ac driving have been investigated. The SQUID contains two Nb/Al-AlO$_{x} $/Nb tunnel junctions with Josephson inductance much larger than the loop inductance so it can be viewed as a single junction having adjustable critical current. We…
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The properties of phase escape in a dc SQUID at 25 mK, which is well below quantum-to-classical crossover temperature $T_{cr}$, in the presence of strong resonant ac driving have been investigated. The SQUID contains two Nb/Al-AlO$_{x} $/Nb tunnel junctions with Josephson inductance much larger than the loop inductance so it can be viewed as a single junction having adjustable critical current. We find that with increasing microwave power $W$ and at certain frequencies $ν$ and $ν$/2, the single primary peak in the switching current distribution, \textrm{which is the result of macroscopic quantum tunneling of the phase across the junction}, first shifts toward lower bias current $I$ and then a resonant peak develops. These results are explained by quantum resonant phase escape involving single and two photons with microwave-suppressed potential barrier. As $W$ further increases, the primary peak gradually disappears and the resonant peak grows into a single one while shifting further to lower $I$. At certain $W$, a second resonant peak appears, which can locate at very low $I$ depending on the value of $ν$. Analysis based on the classical equation of motion shows that such resonant peak can arise from the resonant escape of the phase particle with extremely large oscillation amplitude resulting from bifurcation of the nonlinear system. Our experimental result and theoretical analysis demonstrate that at $T\ll T_{cr}$, escape of the phase particle could be dominated by classical process, such as dynamical bifurcation of nonlinear systems under strong ac driving.
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Submitted 18 August, 2011; v1 submitted 11 April, 2010;
originally announced April 2010.
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Implementation of adiabatic Abelian geometric gates with superconducting phase qubits
Authors:
Z. H. Peng,
H. F. Chu,
Z. D. Wang,
D. N. Zheng
Abstract:
We have developed an adiabatic Abelian geometric quantum computation strategy based on the non-degenerate energy eigenstates in (but not limited to) superconducting phase-qubit systems. The fidelity of the designed quantum gate was evaluated in the presence of simulated thermal fluctuation in superconducting phase qubits circuit and was found to be rather robust against the random errors. In add…
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We have developed an adiabatic Abelian geometric quantum computation strategy based on the non-degenerate energy eigenstates in (but not limited to) superconducting phase-qubit systems. The fidelity of the designed quantum gate was evaluated in the presence of simulated thermal fluctuation in superconducting phase qubits circuit and was found to be rather robust against the random errors. In addition, it was elucidated that the Berry phase in the designed adiabatic evolution may be detected directly via the quantum state tomography developed for superconducting qubits.
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Submitted 7 August, 2007; v1 submitted 15 October, 2006;
originally announced October 2006.
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Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique
Authors:
M. J. Zhang,
J. Li,
Z. H. Peng,
D. N. Zheng,
A. Z. **,
C. Z. Gu
Abstract:
e have developed a simple process to obtain large magnetoresistance (MR) in perovskite manganite thin films by a combination of focused ion beam (FIB) milling and 120 keV H$_{2}^{+}$ ion implantation. Metal slits about 70 nm in width were printed by 30 kV focused Ga ion beam nanolithography on a 4 mm track, and the materials in these slits are then irradiated by the accelerated H$_{2}^{+}$ ions.…
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e have developed a simple process to obtain large magnetoresistance (MR) in perovskite manganite thin films by a combination of focused ion beam (FIB) milling and 120 keV H$_{2}^{+}$ ion implantation. Metal slits about 70 nm in width were printed by 30 kV focused Ga ion beam nanolithography on a 4 mm track, and the materials in these slits are then irradiated by the accelerated H$_{2}^{+}$ ions. Using this method, in a magnetic field of 5 T we can get a MR${>}$60% over a 230 K temperature scope, with a maximum value of 95% at around 70 K. This technique is very promising in terms of its simplicity and flexibility of fabrication and has potential for high-density integration.
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Submitted 9 March, 2006;
originally announced March 2006.
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Small-polaron coherent conduction in lightly doped ReTiO$_{3+ δ/2}$ (Re=La or Nd) thin films prepared by Pulsed Laser Deposition
Authors:
J. Li,
F. B. Wang,
P. Wang,
M. J. Zhang,
H. Y. Tian,
D. N. Zheng
Abstract:
LaTiO$_{3+δ/2}$, NdTiO$_{3+δ/2}$, and Nd$_{1-x}$Sr$_{x}$TiO$_{3+δ/2}$ thin films have been epitaxially grown on (100)SrTiO$_{3}$ and (100)LaAlO$_{3}$ single crystal substrates by using the pulsed laser deposition technique. The oxygen pressure during deposition has been carefully controlled to ensure that the films are lightly doped in the metal side near the metal-Mott-insulator boundary. A ste…
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LaTiO$_{3+δ/2}$, NdTiO$_{3+δ/2}$, and Nd$_{1-x}$Sr$_{x}$TiO$_{3+δ/2}$ thin films have been epitaxially grown on (100)SrTiO$_{3}$ and (100)LaAlO$_{3}$ single crystal substrates by using the pulsed laser deposition technique. The oxygen pressure during deposition has been carefully controlled to ensure that the films are lightly doped in the metal side near the metal-Mott-insulator boundary. A steep drop of the effective carrier number at low temperatures has been observed in some of the films, which may correspond to a gradually opening of the Spin Density Wave (SDW) gap due to the antiferromagnetic spin fluctuations. At elevated temperatures, a thermally induced decrease of the Hall coefficient can also be clearly observed. In spite of the fact that these films were prepared from different materials in varied deposition conditions, the temperature dependence of their resistance can all be almost perfectly fitted by a small-polaron coherent conduction model ($R_s(T)=R_s(0)+Cω_α/\sinh^2(T_ω/T)$). Careful investigation on the fitting parameters implies that the frequency of the phonon coupled to the electrons may be partially related to the lattice distortion induced by the mismatch strain of the substrates.
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Submitted 9 March, 2006;
originally announced March 2006.
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Detection of Geometric Phases in Flux Qubits with Coherent Pulses
Authors:
Z. H. Peng,
M. J. Zhang,
D. N. Zheng
Abstract:
We propose a experimentally feasible scheme to demonstrate the geometric phase in flux qubits by means of detuning coherent microwave pulse techniques. Through measuring the probability of the persistent current state in flux qubits, one can detect the Berry phase that is acquired with system's Hamiltonian adiabatical circular evolution in the parameter space. Furthermore, we show that one shoul…
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We propose a experimentally feasible scheme to demonstrate the geometric phase in flux qubits by means of detuning coherent microwave pulse techniques. Through measuring the probability of the persistent current state in flux qubits, one can detect the Berry phase that is acquired with system's Hamiltonian adiabatical circular evolution in the parameter space. Furthermore, we show that one should choose an appropriate amplitude of pulses in an experiment to obtain high readout resolution when detuning frequency of pulses is fixed and controlled phase shift gates can be implemented based on the geometric phases by inductance coupling two flux qubits.
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Submitted 22 August, 2005; v1 submitted 29 July, 2005;
originally announced July 2005.
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Growth and superconducting transition of $Pr_{1-x} Ca_x Ba_2 Cu_3 O_{7-δ}$ ($x\approx0.5$) epitaxial thin films
Authors:
J. Y. Xiang,
Z. Y. Liu,
J. Li,
P. Wang,
R. L. Wang,
H. P. Yang,
Y. Z. Zhang,
D. N. Zheng,
H. H. Wen,
Z. X. Zhao
Abstract:
Pr$_{1-x}$Ca$_x$Ba$_2$Cu$_3$O$_{7-δ}$($x\approx$0.5) thin films have been grown on SrTiO$_3$ and YSZ substrates by the pulsed laser ablation. The substrate temperature dependence of orientation and superconducting poperties were systematically studied. Good quality \textit{c} and {a}-axis orientated films can be obtained on SrTiO$_3$ via changing the substrate temperature solely. On YSZ, films w…
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Pr$_{1-x}$Ca$_x$Ba$_2$Cu$_3$O$_{7-δ}$($x\approx$0.5) thin films have been grown on SrTiO$_3$ and YSZ substrates by the pulsed laser ablation. The substrate temperature dependence of orientation and superconducting poperties were systematically studied. Good quality \textit{c} and {a}-axis orientated films can be obtained on SrTiO$_3$ via changing the substrate temperature solely. On YSZ, films with good \textit{c}-axis orientation can be grown, while it is hard to grow films with good \emph{a}-axis orientation by changing substrate temperature alone. The highest $T_{C0}$ is about 37K, which is found in the films grown on YSZ with a good \emph{c}-axis orientation. For the films grown on STO, however, the highest $T_{C0}$ is about 35.6K with a mixed orientation of \emph{c}-axis and \emph{a}-axis. In most of the superconducting films, the weak temperature dependence of the normal state resistivity, as characterized by small $R(290K)/R(50K)\leq2$ ratios, together with a weak localization behavior just above $T_C$ could be attributed to the essential scattering due to the localized electronic states. The superconducting transitions in a field up to 10 T along \textit{c}-axis have been measured on a \textit{c}-axis oriented film grown on SrTiO$_3$. The zero-temperature in-plane upper critical field $B^{ab}_{C2}$(0) is estimated from the resistivity transition data.
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Submitted 9 September, 2004;
originally announced September 2004.
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Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ-buffered SOI substrates
Authors:
J. Li,
P. Wang,
J. Y. Xiang,
X. H. Zhu,
W. Peng,
Y. F. Chen,
D. N. Zheng,
Z. W. Li
Abstract:
La2/3Ca1/3MnO3 thin films have been grown on yttria-stabilized zirconia (YSZ) buffered silicon-on-insulator (SOI) substrate by the pulsed laser deposition technique. While full cube-on-cube epitaxy was achieved for the YSZ layer, the top manganite layer was multi-domain-oriented, with a coexistence of cube-on-cube and cube-on-diagonal epitaxy. Due to a combined influence from the magnetocrystall…
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La2/3Ca1/3MnO3 thin films have been grown on yttria-stabilized zirconia (YSZ) buffered silicon-on-insulator (SOI) substrate by the pulsed laser deposition technique. While full cube-on-cube epitaxy was achieved for the YSZ layer, the top manganite layer was multi-domain-oriented, with a coexistence of cube-on-cube and cube-on-diagonal epitaxy. Due to a combined influence from the magnetocrystalline anisotropy and the magnetoelastic anisotropy, in zero field the local spin orientation varies across the twin boundaries. As a result, a quite large low-field magnetoresistance (LFMR) based on spin-dependent tunnelling was observed. The film shows a resistance change of ~20% in a magnetic field <1000 Oe at 50 K, which is promising for real applications.
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Submitted 2 July, 2004;
originally announced July 2004.
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Off-axis electron holography and microstructure of Ba0.5Sr0.5TiO3 thin film grown on LaAlO3
Authors:
H. F. Tian,
H. C. Yu,
X. H. Zhu,
Y. G. Wang,
D. N. Zheng,
H. X. Yang,
J. Q. Li
Abstract:
Epitaxial Ba0.5Sr0.5TiO3 thin films grown on the (001) LaAlO3 substrates with the ferroelectric transition of about 250K have been investigated by TEM and off-axis electron holography. Cross-sectional TEM observations show that the 350nm-thick Ba0.5Sr0.5TiO3 film has a sharp interface with notable misfit dislocations. Off-axis electron holographic measurements reveal that, at low temperatures, t…
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Epitaxial Ba0.5Sr0.5TiO3 thin films grown on the (001) LaAlO3 substrates with the ferroelectric transition of about 250K have been investigated by TEM and off-axis electron holography. Cross-sectional TEM observations show that the 350nm-thick Ba0.5Sr0.5TiO3 film has a sharp interface with notable misfit dislocations. Off-axis electron holographic measurements reveal that, at low temperatures, the ferroelectric polarization results in systematic accumulations of negative charges on the interface and positive charges on the film surface, and, at room temperature, certain charges could only accumulate at the interfacial dislocations and other defective areas.
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Submitted 20 May, 2004;
originally announced May 2004.
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Superconducting properties and c-axis superstructure of Mg1-xAlxB2
Authors:
J. Y. Xiang,
D. N. Zheng,
J. Q. Li,
L. Li,
P. L. Lang,
H. Chen,
C. Dong,
G. C. Che,
Z. A. Ren,
H. H. Qi,
H. Y. Tian,
Y. M. Ni,
Z. X. Zhao
Abstract:
The superconducting and structural properties of a series of Mg1-xAlxB2 samples have been investigated. X-ray diffraction results confirmed the existence of a structural transition associated with the significant change in inter-boron layer distance as reported previously by Slusky et al. Moreover,transmission-electron-microscopy observations revealed the existence of a superstructure with doubl…
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The superconducting and structural properties of a series of Mg1-xAlxB2 samples have been investigated. X-ray diffraction results confirmed the existence of a structural transition associated with the significant change in inter-boron layer distance as reported previously by Slusky et al. Moreover,transmission-electron-microscopy observations revealed the existence of a superstructure with doubled lattice constant along the c-axis direction. We propose that this superstructure is essentially related to the structural transition. The modifications of superconducting transition temperature Tc, the normal state resistivity, and the upper critical field Bc2 by Al do** are discussed in terms of Al-substitution induced changes in the electronic structure at the Fermi energy.
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Submitted 11 March, 2002; v1 submitted 19 April, 2001;
originally announced April 2001.
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Intrinsic Percolative Superconductivity in Heavily Overdoped High Temperature Superconductors
Authors:
H. H. Wen,
S. L. Li,
Z. W. Zhao,
Z. Y. Liu,
H. P. Yang,
D. N. Zheng
Abstract:
Magnetic measurements on heavily overdoped $La_{2-x}Sr_xCuO_4$, $Tl_2Ba_2CuO_6$, $Bi_2Sr_2CuO_6$ and $Bi_2Sr_2CaCu_2O_8$ single crystals reveal a new type magnetization hysteresis loops characterized by the vanishing of usual central peak near zero field. Since this effect has been observed in various systems with very different structural details, it reflects probably a generic behavior for all…
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Magnetic measurements on heavily overdoped $La_{2-x}Sr_xCuO_4$, $Tl_2Ba_2CuO_6$, $Bi_2Sr_2CuO_6$ and $Bi_2Sr_2CaCu_2O_8$ single crystals reveal a new type magnetization hysteresis loops characterized by the vanishing of usual central peak near zero field. Since this effect has been observed in various systems with very different structural details, it reflects probably a generic behavior for all high temperature superconductors. This easy penetration of magnetic flux can be understood in the picture of percolative superconductivity due to the inhomogeneous electronic state in heavily overdoped regime.
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Submitted 2 April, 2001;
originally announced April 2001.
