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Ultrafast optical observation of spin-pum** induced dynamic exchange coupling in ferromagnetic semiconductor/metal bilayer
Authors:
X. Liu,
P. Liu,
H. C. Yuan,
J. Y. Shi,
H. L. Wang,
S. H. Nie,
F. **,
Z. Zheng,
X. Z. Yu,
J. H. Zhao,
H. B. Zhao,
G. Lüpke
Abstract:
Spin angular momentum transfer in magnetic bilayers offers the possibility of ultrafast and low-loss operation for next-generation spintronic devices. We report the field- and temperature- dependent measurements on the magnetization precessions in Co$_2$FeAl/(Ga,Mn)As by time-resolved magneto-optical Kerr effect (TRMOKE). Analysis of the effective Gilbert dam** and phase shift indicates a clear…
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Spin angular momentum transfer in magnetic bilayers offers the possibility of ultrafast and low-loss operation for next-generation spintronic devices. We report the field- and temperature- dependent measurements on the magnetization precessions in Co$_2$FeAl/(Ga,Mn)As by time-resolved magneto-optical Kerr effect (TRMOKE). Analysis of the effective Gilbert dam** and phase shift indicates a clear signature of an enhanced dynamic exchange coupling between the two ferromagnetic (FM) layers due to the reinforced spin pum** at resonance. The temperature dependence of the dynamic exchange-coupling reveals a primary contribution from the ferromagnetism in (Ga,Mn)As.
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Submitted 7 May, 2022; v1 submitted 7 March, 2022;
originally announced March 2022.
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Ultrafast enhancement of interfacial exchange coupling in ferromagnetic bilayer
Authors:
X. Liu,
H. C. Yuan,
P. Liu,
J. Y. Shi,
H. L. Wang,
S. H. Nie,
F. **,
Z. Zheng,
X. Z. Yu,
J. H. Zhao,
H. B. Zhao,
G. Lüpke
Abstract:
Fast spin manipulation in magnetic heterostructures, where magnetic interactions between different materials often define the functionality of devices, is a key issue in the development of ultrafast spintronics. Although recently developed optical approaches such as ultrafast spin-transfer and spin-orbit torques open new pathways to fast spin manipulation, these processes do not fully utilize the…
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Fast spin manipulation in magnetic heterostructures, where magnetic interactions between different materials often define the functionality of devices, is a key issue in the development of ultrafast spintronics. Although recently developed optical approaches such as ultrafast spin-transfer and spin-orbit torques open new pathways to fast spin manipulation, these processes do not fully utilize the unique possibilities offered by interfacial magnetic coupling effects in ferromagnetic multilayer systems. Here, we experimentally demonstrate ultrafast photo-enhanced interfacial exchange interactions in the ferromagnetic Co$_2$FeAl/(Ga,Mn)As system at low laser fluence levels. The excitation efficiency of Co$_2$FeAl with the (Ga,Mn)As layer is 30-40 times higher than the case with the GaAs layer at 5 K due to a photo-enhanced exchange coupling interaction via photoexcited charge transfer between the two ferromagnetic layers. In addition, the coherent spin precessions persist to room temperature, excluding the drive of photo-enhanced magnetization in the (Ga,Mn)As layer and indicating a proximity-effect-related optical excitation mechanism. The results highlight the importance of considering the range of interfacial exchange interactions in ferromagnetic heterostructures and how these magnetic coupling effects can be utilized for ultrafast, low-power spin manipulation.
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Submitted 3 March, 2022; v1 submitted 1 March, 2022;
originally announced March 2022.
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Epitaxial growth and magnetic properties of NiMnAs film on GaAs substrate
Authors:
J. L. Ma,
H. L. Wang,
X. M. Zhang,
S. Yan,
W. S. Yan,
J. H. Zhao
Abstract:
Single-phase Ni0.46Mn0.54As films with strained C1b symmetry have been successfully grown on GaAs (001) substrates by molecular-beam epitaxy. The epitaxial relationship between the film and the substrate has been studied using synchrotron radiation, and a preferred configuration of (110)-orientated Ni0.46Mn0.54As on (001)-orientated GaAs was revealed. In addition, the magnetic properties of the fi…
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Single-phase Ni0.46Mn0.54As films with strained C1b symmetry have been successfully grown on GaAs (001) substrates by molecular-beam epitaxy. The epitaxial relationship between the film and the substrate has been studied using synchrotron radiation, and a preferred configuration of (110)-orientated Ni0.46Mn0.54As on (001)-orientated GaAs was revealed. In addition, the magnetic properties of the films were found to be significantly influenced by the growth temperature. The optimized growth temperature is determined to be ~370 degree Celsius , for which relatively high Curie temperature, large saturation magnetization and coercive field, as well as the pronounced in-plane magnetic anisotropy were obtained. According to the results of X-ray absorption spectroscopy, the above phenomenon can be attributed to the variation of the local electronic structure of the Mn atoms. Our work provides useful information for the further investigations of NiMnAs, which is theoretically predicted to host robust half-metallicity.
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Submitted 7 September, 2018; v1 submitted 6 September, 2018;
originally announced September 2018.
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Enhanced spin-orbit torques in MnAl/Ta films with improving chemical ordering
Authors:
K. K. Meng,
J. Miao,
X. G. Xu,
Y. Wu,
X. P. Zhao,
J. H. Zhao,
Y. Jiang
Abstract:
We report the enhancement of spin-orbit torques in MnAl/Ta films with improving chemical ordering through annealing. The switching current density is increased due to enhanced saturation magnetization MS and effective anisotropy field HK after annealing. Both damplinglike effective field HD and fieldlike effective field HF have been increased in the temperature range of 50 to 300 K. HD varies inve…
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We report the enhancement of spin-orbit torques in MnAl/Ta films with improving chemical ordering through annealing. The switching current density is increased due to enhanced saturation magnetization MS and effective anisotropy field HK after annealing. Both damplinglike effective field HD and fieldlike effective field HF have been increased in the temperature range of 50 to 300 K. HD varies inversely with MS in both of the films, while the HF becomes liner dependent on 1/MS in the annealed film. We infer that the improved chemical ordering has enhanced the interfacial spin transparency and the transmitting of the spin current in MnAl layer.
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Submitted 26 February, 2017;
originally announced February 2017.
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Electrical Transport of perpendicularly magnetized L10-MnGa and MnAl films
Authors:
L. J. Zhu,
J. H. Zhao
Abstract:
Ferromagnetic films of L10-ordered MnGa and MnAl that exhibit giant perpendicular magnetic anisotropy and great controllability in the magnetism and structural disorders show promise not only in the applications in magnetic recording, permanent magnets and spintronics, but also in controllable studies of disorder-relevant electrical transport phenomena. In this article, we review the intriguing ex…
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Ferromagnetic films of L10-ordered MnGa and MnAl that exhibit giant perpendicular magnetic anisotropy and great controllability in the magnetism and structural disorders show promise not only in the applications in magnetic recording, permanent magnets and spintronics, but also in controllable studies of disorder-relevant electrical transport phenomena. In this article, we review the intriguing experimental observations of the orbital two-channel Kondo effect and anomalous Hall effect in L10-ordered MnGa and MnAl thin films with perpendicular magnetic anisotropy. We also give a perspective with regards to the future technological and fundamental applications of these perpendicularly magnetized Mn-based binary alloy films.
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Submitted 31 December, 2016;
originally announced January 2017.
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Anomalous resistivity upturn in epitaxial L21-Co2MnAl films
Authors:
L. J. Zhu,
J. H. Zhao
Abstract:
We report the controllable growth and the intriguing transport behavior of high-spin-polarization epitaxial L21-Co2MnAl films, which exhibit a low-temperature (T) resistivity upturn with pronounced T1/2 dependence, close relevance to structural disorder, and robust independence of magnetic fields. The resistivity upturn turns out to be qualitatively contradictory to weak localization, particle-par…
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We report the controllable growth and the intriguing transport behavior of high-spin-polarization epitaxial L21-Co2MnAl films, which exhibit a low-temperature (T) resistivity upturn with pronounced T1/2 dependence, close relevance to structural disorder, and robust independence of magnetic fields. The resistivity upturn turns out to be qualitatively contradictory to weak localization, particle-particle channel electron-electron interaction (EEI), and orbital two-channel Kondo effect, leaving a three-dimensional particle-hole channel EEI the most likely physical source. Our result highlights a considerable tunability of the structural and electronic disorder of magnetic films by varying growth temperature, affording unprecedented insights into the spin polarization and the resistivity upturn.
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Submitted 31 December, 2016; v1 submitted 12 November, 2016;
originally announced November 2016.
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Anomalous Hall effect and spin orbit torques in MnGa/IrMn films: Modification from strong spin Hall effect of antiferromagnet
Authors:
K. K. Meng,
J. Miao,
X. G. Xu,
Y. Wu,
X. P. Zhao,
J. H. Zhao,
Y. Jiang
Abstract:
We report systematic measurements of anomalous Hall effect(AHE) and spin orbit torques(SOT) in MnGa/IrMn films,, in which a single MnGa epitaxial layer reveals obvious orbital two-channel Kondo (2CK) effect. As increasing the thickness of the antiferromagnet IrMn, the strong spin Hall effect(SHE)has gradually suppressed the orbital 2CK effect and modified the AHE of MnGa.A scaling involving multip…
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We report systematic measurements of anomalous Hall effect(AHE) and spin orbit torques(SOT) in MnGa/IrMn films,, in which a single MnGa epitaxial layer reveals obvious orbital two-channel Kondo (2CK) effect. As increasing the thickness of the antiferromagnet IrMn, the strong spin Hall effect(SHE)has gradually suppressed the orbital 2CK effect and modified the AHE of MnGa.A scaling involving multiple competing scattering mechanisms has been used to distinguish different contributions to the modified AHE. Finally, the sizeable SOT in the MnGa/IrMn films induced by the strong SHE of IrMn have been investigated.The IrMn layer also supplies an in-plane exchange bias field and enables nearly field-free magnetization reversal.
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Submitted 26 September, 2016;
originally announced September 2016.
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Observation of orbital two-channel Kondo effect in a ferromagnetic L10-MnGa film
Authors:
L. J. Zhu,
G. Woltersdorf,
J. H. Zhao
Abstract:
The experimental existence and stability of the quantum criticality point of the two-channel Kondo (2CK) effect displaying exotic non-Fermi liquid physics has been buried in persistent confusion despite the intensive theoretical and experimental efforts in past three decades. Here we report an experimental realization of the two-level system scattering-induced orbital 2CK effect in a ferromagnetic…
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The experimental existence and stability of the quantum criticality point of the two-channel Kondo (2CK) effect displaying exotic non-Fermi liquid physics has been buried in persistent confusion despite the intensive theoretical and experimental efforts in past three decades. Here we report an experimental realization of the two-level system scattering-induced orbital 2CK effect in a ferromagnetic L10-MnGa film, which is signified by a magnetic field-independent resistivity upturn that has a logarithmic and square-root temperature dependence beyond and below the Kondo temperature of ~14.5 K, respectively. Our result not only evidences the robust existence of orbital 2CK effect even in the presence of strong magnetic fields and long-range ferromagnetic ordering but also extends the scope of 2CK host materials from nonmagnetic nanoscale point contacts to diffusive conductors of disordered alloys.
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Submitted 12 November, 2016; v1 submitted 13 May, 2016;
originally announced May 2016.
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Anomalous Hall effect in L10-MnAl films with controllable orbital two-channel Kondo effect
Authors:
L. J. Zhu,
S. H. Nie,
J. H. Zhao
Abstract:
The anomalous Hall effect (AHE) in strongly disordered magnetic systems has been buried in persistent confusion despite its long history. We report the AHE in perpendicularly magnetized L10-MnAl epitaxial films with variable orbital two-channel Kondo (2CK) effect arising from the strong coupling of conduction electrons and the structural disorders of two-level systems. The AHE is observed to excel…
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The anomalous Hall effect (AHE) in strongly disordered magnetic systems has been buried in persistent confusion despite its long history. We report the AHE in perpendicularly magnetized L10-MnAl epitaxial films with variable orbital two-channel Kondo (2CK) effect arising from the strong coupling of conduction electrons and the structural disorders of two-level systems. The AHE is observed to excellently scale with pAH/f=a0pxx0+bpxx2 at high temperatures where phonon scattering prevails. In contrast, significant deviation occurs at low temperatures where the orbital 2CK effect becomes important, suggesting a negative AHE contribution. The deviation of the scaling agrees with the orbital 2CK effect in the breakdown temperatures and deviation magnitudes.
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Submitted 3 February, 2016; v1 submitted 28 January, 2016;
originally announced January 2016.
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Composition-tuned magneto-optical Kerr effect in L10-MnxGa films with giant perpendicular anisotropy
Authors:
L. J. Zhu,
L. Brandt,
J. H. Zhao,
G. Woltersdorf
Abstract:
We report the large polar magnetooptical Kerr effect in L10-MnxGa epitaxial films with giant perpendicular magnetic anisotropy in a wide composition range. The Kerr rotation was enhanced by a factor of up to 10 by decreasing Mn atomic concentration, which most likely arises from the variation of the effective spin-orbit coupling strength, compensation effect of magnetic moments at different Mn ato…
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We report the large polar magnetooptical Kerr effect in L10-MnxGa epitaxial films with giant perpendicular magnetic anisotropy in a wide composition range. The Kerr rotation was enhanced by a factor of up to 10 by decreasing Mn atomic concentration, which most likely arises from the variation of the effective spin-orbit coupling strength, compensation effect of magnetic moments at different Mn atom sites, and overall strain. The Kerr ellipticity and the magnitude of the complex Kerr angle is found to have more complex composition-dependence that varies with the photon energy. These L10-MnxGa films show large Kerr rotation of up to 0.10o, high reflectivity of 35%-55% in a wide wavelength range of 400~850 nm, and giant magnetic anisotropic field of up to 210 kOe, making them an interesting material system for emerging spintronics and terahertz modulator applications.
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Submitted 12 November, 2016; v1 submitted 28 January, 2016;
originally announced January 2016.
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Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films
Authors:
L. J. Zhu,
S. H. Nie,
P. Xiong,
P. Schlottmann,
J. H. Zhao
Abstract:
We report the first experimental realization of orbital two-channel Kondo (2CK) effect from two-level systems (TLSs) in epitaxial L10-MnAl films with giant perpendicular magnetic anisotropy. The resistivity exhibits a low-temperature (T) upturn with a clear transition from a lnT-dependence to T1/2-dependence and deviation from it in three distinct T regimes, which are independent of applied magnet…
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We report the first experimental realization of orbital two-channel Kondo (2CK) effect from two-level systems (TLSs) in epitaxial L10-MnAl films with giant perpendicular magnetic anisotropy. The resistivity exhibits a low-temperature (T) upturn with a clear transition from a lnT-dependence to T1/2-dependence and deviation from it in three distinct T regimes, which are independent of applied magnetic fields. The magnitudes of Kondo temperature and energy splitting of the TLSs are greatly enhanced in comparison to those in other systems exhibiting orbital 2CK, suggesting strong coupling between the tunneling centers with conduction electrons via resonant scattering. These results point to a considerable robustness of the orbital 2CK effect even in the presence of ferromagnetic ordering and significant spin polarization of the conduction electrons.
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Submitted 21 July, 2015; v1 submitted 14 June, 2015;
originally announced June 2015.
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Magnetic coupling at ferromagnetic rare earth / transition-metal interfaces: A comprehensive study
Authors:
T. D. C. Higgs,
S. Bonetti,
H. Ohldag,
N. Banerjee,
X. L. Wang,
A. Rosenberg,
Z. Cai,
J. H. Zhao,
K. A. Moler,
J. W. A. Robinson
Abstract:
Thin film magnetic heterostructures with competing interfacial coupling and Zeeman energy pro- vide a fertile ground to study phase transition between different equilibrium states as a function of external magnetic field and temperature. A rare-earth (RE) / transition metal (TM) ferro- magnetic multilayer is a classic example where the magnetic state is determined by a competition between the Zeem…
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Thin film magnetic heterostructures with competing interfacial coupling and Zeeman energy pro- vide a fertile ground to study phase transition between different equilibrium states as a function of external magnetic field and temperature. A rare-earth (RE) / transition metal (TM) ferro- magnetic multilayer is a classic example where the magnetic state is determined by a competition between the Zeeman energy and antiferromagnetic interfacial exchange coupling energy. Techno- logically, such structures offer the possibility to engineer the macroscopic magnetic response by tuning the microscopic interactions between the layers. We have performed an exhaustive study of a nickel/gadolinium system by using the element-specific measurement technique x-ray magnetic circular dichroism, and determined the full magnetic state diagrams as a function of temperature and magnetic layer thickness. We explain our result based on a modified Stoner-Wohlfarth formal- ism and provide evidence of a thickness-dependent phase transition to a magnetic fan state which is critical in understanding magnetoresistance effects in RE/TM systems. The results provide im- portant insight for spintronics and superconducting spintronics where engineering tunable magnetic inhomogeneity is key for certain applications.
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Submitted 29 May, 2015; v1 submitted 21 May, 2015;
originally announced May 2015.
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Magnetic field-enhanced spin filtering in rare-earth mononitride tunnel junctions
Authors:
P. K. Muduli,
X. L. Wang,
J. H. Zhao,
Mark G. Blamire
Abstract:
Spin filter tunnel junctions are based on selective tunneling of up and down spin electrons controlled through exchange splitting of the band structure of a ferromagnetic insulator. Therefore, spin filter efficiency can be tuned by adjusting exchange strength of the tunnel barrier. We have observed that magnetic field and bias voltage (current) can be used to regulate exchange strength and consequ…
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Spin filter tunnel junctions are based on selective tunneling of up and down spin electrons controlled through exchange splitting of the band structure of a ferromagnetic insulator. Therefore, spin filter efficiency can be tuned by adjusting exchange strength of the tunnel barrier. We have observed that magnetic field and bias voltage (current) can be used to regulate exchange strength and consequently spin-filter efficiency in tunnel junctions with ferromagnetic DyN and GdN tunnel barrier. In tunnel junctions with DyN barrier we obtained $\sim$37$\%$ spin polarization of tunneling electrons at 11 K due to a small exchange splitting ($ E_{ex}$) $\approx$5.6 meV of the barrier height ($Φ_0$) $\approx$60 meV. Huge spin-filter efficiency $\sim$97$\%$ was found for tunnel junctions with GdN barrier due to larger $E_{ex}$ $\approx$47 meV. In the presence of an applied magnetic field, barrier height can further split due to magnetic field dependent exchange splitting $ E_{ex}(H)$. The spin filter efficiency in DyN tunnel junctions can be increased up to $\sim$87$\%$ with magnetic field. Electric and magnetic field tuned spin-filter efficiency of these tunnel junctions gives opportunity for practical application of these devices with additional functionality.
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Submitted 20 July, 2015; v1 submitted 24 October, 2014;
originally announced October 2014.
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Piezo-Voltage Manipulation of the Magnetization and Magnetic Reversal in Thin Fe Film
Authors:
Y. Y. Li,
W. G. Luo,
L. J. Zhu,
J. H. Zhao,
K. Y. Wang
Abstract:
We carefully investigated the in-plane magnetic reversal and corresponding magnetic domain structures in Fe/GaAs/piezo-transducer heterostructure using longitudinal magneto-optical Kerr microscopy. The coexistence of the <100> cubic magnetic anisotropy and uniaxial magnetic anisotropy was observed in our Fe thin film grown on GaAs. The induced deformation along [110] orientation can effectively ma…
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We carefully investigated the in-plane magnetic reversal and corresponding magnetic domain structures in Fe/GaAs/piezo-transducer heterostructure using longitudinal magneto-optical Kerr microscopy. The coexistence of the <100> cubic magnetic anisotropy and uniaxial magnetic anisotropy was observed in our Fe thin film grown on GaAs. The induced deformation along [110] orientation can effectively manipulate the magnetic reversal with magnetic field applied along magnetic uniaxial hard [110] axes. The control of two-jump magnetization switching to one-jump magnetization switching during the magnetic reversal was achieved by piezo-voltages with magnetic field applied in [100] direction. The additional uniaxial anisotropy induced by piezo-voltages at -75 /75V are -1.400/1400 J/m3 .
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Submitted 10 March, 2014;
originally announced March 2014.
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Anomalous Hall Effect in Chemically Disordered L10-Mn1.5Ga
Authors:
L. J. Zhu,
D. Pan,
J. H. Zhao
Abstract:
The anomalous Hall effect (AHE) in perpendicularly magnetized L10-Mn1.5Ga single-crystalline films is investigated as a function of degree of long-range chemical ordering and temperature. Our results provide firm evidence that phonons has negligibly smaller effect on skew scattering contributions to AHE resistivity than defects, the overlook of which in conventional scaling laws results in signifi…
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The anomalous Hall effect (AHE) in perpendicularly magnetized L10-Mn1.5Ga single-crystalline films is investigated as a function of degree of long-range chemical ordering and temperature. Our results provide firm evidence that phonons has negligibly smaller effect on skew scattering contributions to AHE resistivity than defects, the overlook of which in conventional scaling laws results in significant discrepancies and exponent n beyond 2 when fitting the data. We find that the broken of long-range chemical ordering strongly affects both intrinsic and extrinsic contributions of AHE conductivity, e.g., it greatly suppresses intrinsic contributions by influencing the topology of the band structures. Our results are of great importance for both physical understanding and technological engineering of the AHE.
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Submitted 19 July, 2016; v1 submitted 7 December, 2013;
originally announced December 2013.
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Evidence for the intrinsic ferromagnetism of semiconductor (Ga,Cr)As revealed by magnetic circular dichroism
Authors:
H. D. Gan,
H. Z. Zheng,
J. F. Bi,
Y. Ji,
B. Q. Sun,
G. R. Li,
X. Z. Ruan,
J. Lu,
J. H. Zhao
Abstract:
To clarify whether or not (Ga,Cr)As is an intrinsic diluted magnetic semiconductor, a systematic study of the magnetic circular dichroism (MCD) was carried out for a series of (Ga,Cr)As epilayers grown by the low-temperature molecular-beam epitaxy technique. The present work provides unambiguous evidence for the intrinsic ferromagnetism of the (Ga,Cr)As epilayers with all the necessary propertie…
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To clarify whether or not (Ga,Cr)As is an intrinsic diluted magnetic semiconductor, a systematic study of the magnetic circular dichroism (MCD) was carried out for a series of (Ga,Cr)As epilayers grown by the low-temperature molecular-beam epitaxy technique. The present work provides unambiguous evidence for the intrinsic ferromagnetism of the (Ga,Cr)As epilayers with all the necessary properties in accordance with that of a diluted magnetic semiconductor, especially the hysteresis characteristics, which is opened up in the magnetic field dependence of MCD.
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Submitted 1 November, 2007;
originally announced November 2007.
