Showing 1–16 of 16 results for author: Zhang, X M

Shock consolidation and the corresponding plasticity in nanopowdered Mg

Authors: D. B. He, M. Y. Wang, W. B. Bi, M. Shang, Y. Cai, L. Deng, X. M. Zhang, J. F. Tang, L. Wang

Abstract: Nanopowder consolidation under high strain rate shock compression is a potential method for synthesizing and processing bulk nanomaterials. A thorough investigation of the shock deformation of powder materials is of great engineering significance. Here we combine nonequilibrium molecular dynamics (NEMD) simulations and X-ray diffraction (XRD) simulation methods to investigate the deformation twinn… ▽ More Nanopowder consolidation under high strain rate shock compression is a potential method for synthesizing and processing bulk nanomaterials. A thorough investigation of the shock deformation of powder materials is of great engineering significance. Here we combine nonequilibrium molecular dynamics (NEMD) simulations and X-ray diffraction (XRD) simulation methods to investigate the deformation twinning and pore compaction in shock-compressed np-Mg. Significant anisotropy and strong dependence on crystallographic orientation are presented during shock-induced deformation twinning. During the shock stage, three typical types of twins were firstly induced, namely {11-21} twin (T1), {11-22} twin (T2) and {10-12} twin (T3). Most of them were generated in grains with a larger angle between the impact direction and the c-axis of the lattice. With the increase in strain rate, the types and quantities of twins continued to enrich, but they did not occur when the strain rate was too high. We also discussed the deformation mechanisms of the three types of twins and found that the coupling of slip and shuffle dominated twin deformation. In addition, void filling occurred due to the interaction of twinning and other plastic deformations, leading to the densification of np-Mg. During the release stage, an interesting reverse change was observed, where the twins produced by the impact receded, and twins were produced in grains that were previously difficult to produce. △ Less

Submitted 13 March, 2024; v1 submitted 1 March, 2024; originally announced March 2024.

Comments: The present study investigates the impact consolidation and deformation damage of nanopowders under extreme shock conditions. The manuscript comprises 15 pages and includes 16 figures

Anisotropic and extreme magnetoresistance in the magnetic semimetal candidate Erbium monobismuthide

Authors: L. - Y. Fan, F. Tang, W. Z. Meng, W. Zhao, L. Zhang, Z. D. Han, B. Qian, X. -F. Jiang, X. M. Zhang, Y. Fang

Abstract: Rare-earth monopnictides display rich physical behaviors, featuring most notably spin and orbital orders in their ground state. Here, we grow ErBi single crystal and study its magnetic, thermal and electrical properties. An analysis of the magnetic entropy and magnetization indicates that the weak magnetic anisotropy in ErBi possibly derives from the mixing effect, namely the anisotropic ground st… ▽ More Rare-earth monopnictides display rich physical behaviors, featuring most notably spin and orbital orders in their ground state. Here, we grow ErBi single crystal and study its magnetic, thermal and electrical properties. An analysis of the magnetic entropy and magnetization indicates that the weak magnetic anisotropy in ErBi possibly derives from the mixing effect, namely the anisotropic ground state of Er3+ (4f11) mingles with the isotropic excited state through exchange interaction. At low temperature, an extremely large magnetoresistance (~104%) with a parabolic magnetic-field dependence is observed, which can be ascribed to the nearly perfect electron-hole compensation and ultrahigh carrier mobility. When the magnetic field is rotated in the ab (ac) plane and the current flows in the b axis, the angular magnetoresistance in ErBi shows a twofold (fourfold) symmetry. Similar case has been observed in LaBi where the anisotropic Fermi surface dominates the low-temperature transport. Our theoretical calculation suggests that near the Fermi level ErBi shares similarity with LaBi in the electronic band structures. These findings indicate that the angular magnetoresistance of ErBi could be mainly determined by its anisotropic Fermi surface topology. Besides, contributions from several other possibilities, including the spin-dependent scattering, spin-orbit scattering, and demagnetization correlation to the angular magnetoresistance of ErBi are also discussed. △ Less

Submitted 17 September, 2020; originally announced September 2020.

Dynamics of antiferromagnetic skyrmion in absence and presence of pinning defect

Authors: Z. **, T. T. Liu, W. H. Li, X. M. Zhang, Z. P. Hou, D. Y. Chen, Z. Fan, M. Zeng, X. B. Lu, X. S. Gao, M. H. Qin, J. M. Liu

Abstract: A theoretical study on the dynamics of an antiferromagnetic (AFM) skyrmion is indispensable for revealing the underlying physics and understanding the numerical and experimental observations. In this work, we present a reliable theoretical treatment of the spin current induced motion of an AFM skyrmion in the absence and presence of pinning defect. For an ideal AFM system free of defect, the skyrm… ▽ More A theoretical study on the dynamics of an antiferromagnetic (AFM) skyrmion is indispensable for revealing the underlying physics and understanding the numerical and experimental observations. In this work, we present a reliable theoretical treatment of the spin current induced motion of an AFM skyrmion in the absence and presence of pinning defect. For an ideal AFM system free of defect, the skyrmion motion velocity as a function of the intrinsic parameters can be derived, based on the concept that the skyrmion profile agrees well with the 360 domain wall formula, leading to an explicit description of the skyrmion dynamics. However, for an AFM lattice containing a defect, the skyrmion can be pinned and the depinning field as a function of dam** constant and pinning strength can be described by the Thiele approach. It is revealed that the depinning behavior can be remarkably influenced by the time dependent oscillation of the skyrmion trajectory. The present theory provides a comprehensive scenario for manipulating the dynamics of AFM skyrmion, informative for future spintronic applications based on antiferromagnets. △ Less

Submitted 28 July, 2020; originally announced July 2020.

Comments: 17 pages, 4 figures, to be published in Physical Review B

Journal ref: Physical Review B 102, 054419 (2020)

Magnetic-field-induced nontrivial electronic state in the Kondo-lattice semimetal CeSb

Authors: Y. Fang, F. Tang, Y. R. Ruan, J. M. Zhang, H. Zhang, H. Gu, W. Y. Zhao, Z. D. Han, W. Tian, B. Qian, X. F. Jiang, X. M. Zhang, X. Ke

Abstract: Synergic effect of electronic correlation and spin-orbit coupling is an emerging topic in topological materials. Central to this rapidly develo** area are the prototypes of strongly correlated heavy-fermion systems. Recently, some Ce-based compounds are proposed to host intriguing topological nature, among which the electronic properties of CeSb are still under debate. In this paper, we report a… ▽ More Synergic effect of electronic correlation and spin-orbit coupling is an emerging topic in topological materials. Central to this rapidly develo** area are the prototypes of strongly correlated heavy-fermion systems. Recently, some Ce-based compounds are proposed to host intriguing topological nature, among which the electronic properties of CeSb are still under debate. In this paper, we report a comprehensive study combining magnetic and electronic transport measurements, and electronic band structure calculations of this compound to identify its topological nature. Quantum oscillations are clearly observed in both magnetization and magnetoresistance at high fields, from which one pocket with a nontrivial Berry phase is recognized. Angular-dependent magnetoresistance shows that this pocket is elongated in nature and corresponds to the electron pocket as observed in LaBi. Nontrivial electronic structure of CeSb is further confirmed by first-principle calculations, which arises from spin splitting in the fully polarized ferromagnetic state. These features indicate that magnetic-field can induce nontrivial topological electronic states in this prototypical Kondo semimetal. △ Less

Submitted 27 May, 2020; v1 submitted 25 May, 2020; originally announced May 2020.

Epitaxial growth and magnetic properties of NiMnAs film on GaAs substrate

Authors: J. L. Ma, H. L. Wang, X. M. Zhang, S. Yan, W. S. Yan, J. H. Zhao

Abstract: Single-phase Ni0.46Mn0.54As films with strained C1b symmetry have been successfully grown on GaAs (001) substrates by molecular-beam epitaxy. The epitaxial relationship between the film and the substrate has been studied using synchrotron radiation, and a preferred configuration of (110)-orientated Ni0.46Mn0.54As on (001)-orientated GaAs was revealed. In addition, the magnetic properties of the fi… ▽ More Single-phase Ni0.46Mn0.54As films with strained C1b symmetry have been successfully grown on GaAs (001) substrates by molecular-beam epitaxy. The epitaxial relationship between the film and the substrate has been studied using synchrotron radiation, and a preferred configuration of (110)-orientated Ni0.46Mn0.54As on (001)-orientated GaAs was revealed. In addition, the magnetic properties of the films were found to be significantly influenced by the growth temperature. The optimized growth temperature is determined to be ~370 degree Celsius , for which relatively high Curie temperature, large saturation magnetization and coercive field, as well as the pronounced in-plane magnetic anisotropy were obtained. According to the results of X-ray absorption spectroscopy, the above phenomenon can be attributed to the variation of the local electronic structure of the Mn atoms. Our work provides useful information for the further investigations of NiMnAs, which is theoretically predicted to host robust half-metallicity. △ Less

Submitted 7 September, 2018; v1 submitted 6 September, 2018; originally announced September 2018.

Surface reconstruction, premelting, and collapse of open-cell nanoporous Cu via thermal annealing

Authors: L. Wang, X. M. Zhang, L. Deng, J. F. Tang, S. F. Xiao, H. Q. Deng, W. Y. Hu

Abstract: We systematic investigate the collapse of a set of open-cell nanoporous Cu (np-Cu) with the same porosity and shapes, but different specific surface area, during thermal annealing, via performing large-scale molecular dynamics simulations. Surface premelting is dominated in their collapses, and surface premelting temperatures reduce linearly with the increase of specific surface area. The collapse… ▽ More We systematic investigate the collapse of a set of open-cell nanoporous Cu (np-Cu) with the same porosity and shapes, but different specific surface area, during thermal annealing, via performing large-scale molecular dynamics simulations. Surface premelting is dominated in their collapses, and surface premelting temperatures reduce linearly with the increase of specific surface area. The collapse mechanisms are different for np-Cu with different specific surface area. If the specific surface area less than a critical value ($\sim$ 2.38 nm$^{-1}$), direct surface premelting, giving rise to the transition of ligaments from solid to liquid states, is the cause to facilitate falling-down of np-Cu during thermal annealing. While surface premelting and following recrystallization, accelerating the sloughing of ligaments and annihilation of pores, is the other mechanism, as exceeding the critical specific surface area. The recrystallization occurs at the temperatures below supercooling, where liquid is instable and instantaneous. Thermal-induced surface reconstruction prompts surface premelting via facilitating local "disordering" and "chaotic" at the surface, which are the preferred sites for surface premelting. △ Less

Submitted 6 February, 2018; originally announced February 2018.

New spin injection scheme based on spin gapless semiconductors: A first-principles study

Authors: G. Z. Xu, X. M. Zhang, Z. P. Hou, Y. Wang, E. K. Liu, X. K. Xi, S. G. Wang, W. Q. Wang, H. Z. Luo, W. H. Wang, G. H. Wu

Abstract: Spin injection efficiency based on conventional and/or half-metallic ferromagnet/semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin gapless semiconductors can significantly reduce the conductive mismatch to enhance spin injection efficiency. By performing first principles calculations based on s… ▽ More Spin injection efficiency based on conventional and/or half-metallic ferromagnet/semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin gapless semiconductors can significantly reduce the conductive mismatch to enhance spin injection efficiency. By performing first principles calculations based on superlattice structure, we have studied the representative system of Mn2CoAl/semiconductor spin injector scheme. The results showed that a high spin polarization was maintained at the interface in systems of Mn2CoAl/Fe2VAl constructed with (100) interface and Mn2CoAl/GaAs with (110) interface, and the latter is expected to possess long spin diffusion length. Inherited from the spin gapless feature of Mn2CoAl, a pronounced dip was observed around the Fermi level in the majority-spin density-of-states in both systems, suggesting fast transport of the low-density carriers. △ Less

Submitted 28 September, 2015; originally announced September 2015.

Comments: 16 pages, 4 figs. Accepted by EPL. arXiv admin note: substantial text overlap with arXiv:1411.5762

Giant Magneto-Seebeck Effect in Spin Valves

Authors: X. M. Zhang, C. H. Wan, Z. H. Yuan, H. Wu, Q. T. Zhang, X. Zhang, B. S. Tao, C. Fang, X. F. Han

Abstract: Giant magneto-Seebeck (GMS) effect was observed in Co/Cu/Co and NiFe/Cu/Co spin valves. Their Seebeck coefficients in parallel state was larger than that in antiparallel state, and GMS ratio defined as (SAP-SP)/SP could reach -9% in our case. The GMS originated not only from trivial giant magnetoresistance but also from spin current generated due to spin polarized thermoelectric conductivity in fe… ▽ More Giant magneto-Seebeck (GMS) effect was observed in Co/Cu/Co and NiFe/Cu/Co spin valves. Their Seebeck coefficients in parallel state was larger than that in antiparallel state, and GMS ratio defined as (SAP-SP)/SP could reach -9% in our case. The GMS originated not only from trivial giant magnetoresistance but also from spin current generated due to spin polarized thermoelectric conductivity in ferromagnetic materials and subsequent modulation of the spin current by spin configurations in spin valves. Simple Mott two-channel model reproduced a -11% GMS for the Co/Cu/Co spin valves, qualitatively consistent with our observations. The GMS effect could be applied simultaneously sensing temperature gradient and magnetic field and also be possibly applied to determine spin polarization of thermoelectric conductivity and Seebeck coefficient in ferromagnetic thin films. △ Less

Submitted 11 June, 2015; originally announced June 2015.

Comments: 4 pages and 5 figures in maintext. 2 pages and figures in supplementary information

Microwave band gap and cavity mode in spoof-insulator-spoof waveguide with multiscale structured surface

Authors: Qiang Zhang, Jun Jun Xiao, Dezhuan Han, Fei Fei Qin, Xiao Ming Zhang, Yong Yao

Abstract: We propose a multiscale spoof-insulator-spoof (SIS) waveguide by introducing periodic geometry modulation in the wavelength scale to a SIS waveguide made of perfect electric conductor. The MSIS consists of multiple SIS subcells. The dispersion relationship of the fundamental guided mode of the spoof surface plasmon polaritons (SSPPs) is studied analytically within the small gap approximation. It i… ▽ More We propose a multiscale spoof-insulator-spoof (SIS) waveguide by introducing periodic geometry modulation in the wavelength scale to a SIS waveguide made of perfect electric conductor. The MSIS consists of multiple SIS subcells. The dispersion relationship of the fundamental guided mode of the spoof surface plasmon polaritons (SSPPs) is studied analytically within the small gap approximation. It is shown that the multiscale SIS possesses microwave band gap (MBG) due to the Bragg scattering. The "gap maps" in the design parameter space are provided. We demonstrate that the geometry of the subcells can efficiently adjust the effective refraction index of the elementary SIS and therefore further control the width and the position of the MBG. The results are in good agreement with numerical calculations by the finite element method (FEM). For finite-sized MSIS of given geometry in the millimeter scale, FEM calculations show that the first-order symmetric SSPP mode has zero transmission in the MBG within frequency range from 4.29 GHz to 5.1 GHz. A cavity mode is observed inside the gap at 4.58 GHz, which comes from a designer "point defect" in the multiscale SIS waveguide. Furthermore, ultrathin MSIS waveguides are shown to have both symmetric and antisymmetric modes with their own MBGs, respectively. The deep-subwavelength confinement and the great degree to control the propagation of SSPPs in such structures promise potential applications in miniaturized microwave device. △ Less

Submitted 21 April, 2015; originally announced April 2015.

Spin injection based on the spin gapless semiconductor(SGS)/semiconductor heterostructures

Authors: G. Z. Xu, W. H. Wang, X. M. Zhang, Y. Wang, E. K. Liu, X. K. Xi, G. H. Wu

Abstract: Spin injection efficiency based on conventional ferromagnet (or half-metallic ferromagnet) /semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin gapless semiconductors can significantly reduce the conductive mismatch while conserve high spin polarization. By performing first principles calculation… ▽ More Spin injection efficiency based on conventional ferromagnet (or half-metallic ferromagnet) /semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin gapless semiconductors can significantly reduce the conductive mismatch while conserve high spin polarization. By performing first principles calculations based on superlattice structure, we have studied the representative system of Mn2CoAl/semiconductor spin injector scheme. The results showed that high spin polarization were maintained at the interface in systems of Mn2CoAl/Fe2VAl constructed with (100) interface and Mn2CoAl/GaAs with (110) interface, and the latter is expected to possess long spin diffusion length. Inherited from the spin gapless feature of Mn2CoAl, a pronounced dip was observed around the Fermi level in the majority-spin DOS in both systems, suggesting fast transport of the low-density carriers. △ Less

Submitted 28 November, 2014; v1 submitted 20 November, 2014; originally announced November 2014.

Comments: 7 pages, 4 figs, submitted

Magneto-transport properties of oriented Mn2CoAl films sputtered on thermally oxidized Si substrates

Authors: G. Z. Xu, Y. Du, X. M. Zhang, H. G. Zhang, E. K. Liu, W. H. Wang, G. H. Wu

Abstract: Spin gapless semiconductors are interesting novel class of materials by embracing both magnetism and semiconducting. Its potential application in future spintronics requires realization in thin film form. In this letter, we report a successful growth of spin gapless Mn2CoAl films on thermally oxidized Si substrates by magnetron sputtering deposition. The films deposited at 673K are well oriented t… ▽ More Spin gapless semiconductors are interesting novel class of materials by embracing both magnetism and semiconducting. Its potential application in future spintronics requires realization in thin film form. In this letter, we report a successful growth of spin gapless Mn2CoAl films on thermally oxidized Si substrates by magnetron sputtering deposition. The films deposited at 673K are well oriented to (001) direction and display a uniform-crystalline surface. Magnetotransport measurements on the oriented films reveal a semiconducting-like resistivity, small anomalous Hall conductivity and linear magnetoresistance (MR) representative of the transport signatures of spin gapless semiconductors. The magnetic properties of the films have also been investigated and compared to that of bulk Mn2CoAl, with small discrepancy induced by the composition deviation. △ Less

Submitted 7 August, 2014; originally announced August 2014.

Comments: 13 pages, 5 figs. Accepted by APL

Journal ref: Appl. Phys. Lett. 104, 242408 (2014)

A new class of topological insulators from I-III-IV half-Heusler compounds with strong band inversion strength

Authors: X. M. Zhang, G. Z. Xu, Y. Du, E. K. Liu, Z. Y. Liu, W. H. Wang, G. H. Wu

Abstract: In this paper, by first principle calculations, we investigate systematically the band topology of a new half-Heusler family with composition of I(A)-III(A)-IV(A). The results clearly show that many of the I-III-IV half-Heusler compounds are in fact promising to be topological insulator candidates. The characteristic feature of these new topological insulators is the naturally strong band inversio… ▽ More In this paper, by first principle calculations, we investigate systematically the band topology of a new half-Heusler family with composition of I(A)-III(A)-IV(A). The results clearly show that many of the I-III-IV half-Heusler compounds are in fact promising to be topological insulator candidates. The characteristic feature of these new topological insulators is the naturally strong band inversion strength (up to -2eV) without containing heavy elements. Moreover, we found that both the band inversion strength and the topological insulating gap can be tailored through strain engineering, and therefore would be grown epitaxially in the form of films, and useful in spintronics and other applications. △ Less

Submitted 17 October, 2013; originally announced October 2013.

Comments: 17 pages, 4 figs, submitted for publication

Journal ref: J. Appl. Phys. 115, 083704 (2014)

Crossover of magnetoresistance in the zerogap half-metallic Heusler alloy Fe2CoSi

Authors: Y. Du, G. Z. Xu, X. M. Zhang, Z. Y. Liu, S. Y. Yu, E. K. Liu, W. H. Wang, G. H. Wu

Abstract: This work reports on the band structure and magneto-transport investigations of the inverse Heusler compound Fe2CoSi. The first-principles calculations reveal that Fe2CoSi has a very peculiar band structure with a conducting property in the majority spin channel and a nearly zero bandgap in the minority spin channel. The synthesized Fe2CoSi sample shows a high-ordered inverse Heusler structure wit… ▽ More This work reports on the band structure and magneto-transport investigations of the inverse Heusler compound Fe2CoSi. The first-principles calculations reveal that Fe2CoSi has a very peculiar band structure with a conducting property in the majority spin channel and a nearly zero bandgap in the minority spin channel. The synthesized Fe2CoSi sample shows a high-ordered inverse Heusler structure with a magnetic moment of 4.88 μB at 5 K and a high Curie temperature of 1038 K. With increasing temperature, a crossover from positive to negative magnetoresistance (MR) is observed. Complemented with the Hall effect measurements, we suggest the intriguing crossover of MR can be ascribed to the dominant spin carriers changing from the gapless minority spin channel to the majority spin channel at Fermi level. △ Less

Submitted 11 April, 2013; originally announced April 2013.

Comments: 16 pages, 5 figures, submitted for publication

Journal ref: EPL 103 (2013) 37011

Giant magnetocaloric effect in isostructural MnNiGe-CoNiGe system by establishing a Curie-temperature window

Authors: E. K. Liu, H. G. Zhang, G. Z. Xu, X. M. Zhang, R. S. Ma, W. H. Wang, J. L. Chen, H. W. Zhang, G. H. Wu, L. Feng, X. X. Zhang

Abstract: An effective scheme of isostructural alloying was applied to establish a Curie-temperature window in isostructural MnNiGe-CoNiGe system. With the simultaneous accomplishment of decreasing structural-transition temperature and converting antiferromagnetic martensite to ferromagnetic state, a 200 K Curie-temperature window was established between Curie temperatures of austenite and martensite phases… ▽ More An effective scheme of isostructural alloying was applied to establish a Curie-temperature window in isostructural MnNiGe-CoNiGe system. With the simultaneous accomplishment of decreasing structural-transition temperature and converting antiferromagnetic martensite to ferromagnetic state, a 200 K Curie-temperature window was established between Curie temperatures of austenite and martensite phases. In the window, a first-order magnetostructural transition between paramagnetic austenite and ferromagnetic martensite occurs with a sharp jump in magnetization, showing a magnetic entropy change as large as -40 J kg-1 K-1 in a 50 kOe field change. This giant magnetocaloric effect enables Mn1-xCoxNiGe to become a potential magnetic refrigerant. △ Less

Submitted 28 March, 2013; originally announced March 2013.

Comments: 21 pages, 6 figures, 1 table, accepted by APL

Journal ref: Applied Physics Letters 102, 122405 (2013)

Topological Insulators in Hexagonal Wurtzite-type Binary Compounds

Authors: X. M. Zhang, R S. Ma, X. C. Liu, E. K. Liu, G. D. Liu, Z. Y. Liu, W. H. Wang, G. H. Wu

Abstract: We propose new topological insulators in hexagonal wurtzite-type binary compounds based on the first principles calculations. It is found that two compounds AgI and AuI are three-dimensional topological insulators with a naturally opened band-gap at Fermi level. From band inversion mechanism point view, this new family of topological insulators is similar with HgTe, which has s (Gamma 6) - p (Gamm… ▽ More We propose new topological insulators in hexagonal wurtzite-type binary compounds based on the first principles calculations. It is found that two compounds AgI and AuI are three-dimensional topological insulators with a naturally opened band-gap at Fermi level. From band inversion mechanism point view, this new family of topological insulators is similar with HgTe, which has s (Gamma 6) - p (Gamma 8) band inversion. Our results strongly support that the spin-orbit coupling is not an essential factor to the band inversion mechanism; on the contrary, it is mainly responsible to the formation of a global band gap for the studied topological insulators. We further theoretically explore the feasibility of tuning the topological order of the studied compounds with two types of strains. The results show that the uniaxial strain can contribute extremely drastic impacts to the band inversion behavior, which provide an effective approach to induce topological phase transition. △ Less

Submitted 28 March, 2013; originally announced March 2013.

Comments: 20 pages, 5 figures, submitted for publication

Journal ref: EPL, 103 (2013) 57012

Prediction of topological insulating behavior in Hg2CuTi-type Heusler compounds from first principles

Authors: X. M. Zhang, W. H. Wang, E. K. Liu, Z. Y. Liu, G. D. Liu, G. H. Wu

Abstract: The topological band structures of the X2YZ Heusler compounds with the Hg2CuTi structure are investigated by using first-principles calculations within density functional theory. Our results clearly show that a large number of the Hg2CuTi type Heusler compounds naturally exhibit distinct band-inversion feature, which is mainly controlled by the Y-Z zinc blende sublattice. Similar to the half-Heusl… ▽ More The topological band structures of the X2YZ Heusler compounds with the Hg2CuTi structure are investigated by using first-principles calculations within density functional theory. Our results clearly show that a large number of the Hg2CuTi type Heusler compounds naturally exhibit distinct band-inversion feature, which is mainly controlled by the Y-Z zinc blende sublattice. Similar to the half-Heusler family, the topological band order in Hg2CuTi type Heusler compounds is sensitive to the variation of lattice constant, and most of them possess a negative formation energy, which makes them more suitable in material growth and could easily achieve the topological insulating behavior by alloying or proper strain. △ Less

Submitted 1 November, 2012; originally announced November 2012.

Comments: 17 pages, 5 figures, submitted for publication

Journal ref: Computational Materials Science, 70, 145 (2013)