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Showing 1–8 of 8 results for author: Zhang, D M

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  1. arXiv:2308.09572  [pdf

    cond-mat.soft cond-mat.mtrl-sci

    Two Kinetically Different Supercooled Liquids -- Potential Energy Landscape Perspective

    Authors: B. Zhang, D. M. Zhang, D. Y. Sun, X. G. Gong

    Abstract: During the process of rapid cooling, two distinct types of supercooled liquids are found. One kind of supercooled liquids destines to crystallize (the crystal-forming liquid (GFL)), and the other forms a glass (the glass-forming liquid (GFL)). Despite having no significant differences in conventional physical quantities such as structure and energy, the distribution of the potential energy after s… ▽ More

    Submitted 18 August, 2023; originally announced August 2023.

    Comments: 7 figures 24 pages

  2. arXiv:2203.11428  [pdf

    cond-mat.mtrl-sci cond-mat.soft cond-mat.stat-mech

    The Angell Plot from the Potential Energy Landscape Perspective

    Authors: D. M. Zhang, D. Y. Sun, X. G. Gong

    Abstract: Within the scenario of the potential energy landscape (PEL), a thermodynamic model has been developed to uncover the physics behind the Angell plot. In our model, by separating the barrier distribution in PELs into a Gaussian-like and a power-law form, we obtain a general relationship between the relaxation time and the temperature. The wide range of the experimental data in the Angell plot, as we… ▽ More

    Submitted 21 March, 2022; originally announced March 2022.

  3. arXiv:2107.11023  [pdf

    cond-mat.soft cond-mat.stat-mech

    Discovery of a paired Gaussian and long-tailed distribution of potential energies in nanoglasses

    Authors: D. M. Zhang, D. Y. Sun, X. G. Gong

    Abstract: It is generally believed that the intrinsic properties of glasses are intimately related to potential-energy landscapes (PELs). However, little is known about the PELs of glasses below the glass transition temperature (Tg). Taking advantage of lower potential-energy barriers in nanosystems, we have systematically investigated the dynamics behavior of two nanoglasses, Al43 and Al46. Structure trans… ▽ More

    Submitted 12 January, 2022; v1 submitted 23 July, 2021; originally announced July 2021.

    Comments: 23 pages, 10 figures

    Journal ref: Physical Review B 2022, 105 (3), 035403

  4. arXiv:1307.5485  [pdf, other

    cond-mat.mes-hall

    Tunneling Tuned Spin Modulations in Ultrathin Topological Insulator Films

    Authors: M. Neupane, A. Richardella, J. Sanchez-Barriga, S. -Y. Xu, N. Alidoust, I. Belopolski, Chang Liu, G. Bian, D. M. Zhang, D. Marchenko, A. Varykhalov, O. Rader, M. Leandersson, T. Balasubramanian, T. -R. Chang, H. -T. Jeng, S. Basak, H. Lin, A. Bansil, N. Samarth, M. Z. Hasan

    Abstract: Quantitative understanding of the relationship between quantum tunneling and Fermi surface spin polarization is key to device design using topological insulator surface states. By using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films across the metal-to-insulator transition, we observe that for a given film thickness, the spin polarization… ▽ More

    Submitted 20 July, 2013; originally announced July 2013.

    Comments: 8 pages, 4 figures

  5. arXiv:1212.1225  [pdf, other

    cond-mat.mes-hall cond-mat.mtrl-sci

    Growth and Characterization of Hybrid Insulating Ferromagnet-Topological Insulator Heterostructure Devices

    Authors: A. Kandala, A. Richardella, D. W. Rench, D. M. Zhang, T. C. Flanagan, N. Samarth

    Abstract: We report the integration of the insulating ferromagnet GdN with epitaxial films of the topological insulator Bi2Se3 and present detailed structural, magnetic and transport characterization of the heterostructures. Fabrication of multi-channel Hall bars with bare and GdN-capped sections enables direct comparison of magnetotransport properties. We show that the presence of the magnetic overlayer re… ▽ More

    Submitted 16 September, 2013; v1 submitted 5 December, 2012; originally announced December 2012.

    Comments: The title and content of this manuscript have been significantly revised taking into account newly acquired data

    Journal ref: Appl. Phys. Lett. 103 , 202409 (2013)

  6. arXiv:1102.5592  [pdf

    cond-mat.mtrl-sci

    Electronic properties of edge-functionalized zigzag graphene nanoribbons on SiO2 substrate-v2

    Authors: D. M. Zhang, Z. Li, J. F. Zhong, L. Miao, J. J. Jiang

    Abstract: Based on first-principles calculations, electronic properties of edge-functionalized zigzag graphene nanoribbons (ZGNRs) on SiO2 substrate are presented. Metallic or semiconducting properties of ZGNRs are revealed due to various interactions between edge-hydrogenated ZGNRs and different SiO2 (0001) surfaces. Bivalent functional groups decorating ZGNRs serve as the bridge between active edges of ZG… ▽ More

    Submitted 27 February, 2011; originally announced February 2011.

    Comments: v2

    Journal ref: Nanotechnology, 2011; 22:265702

  7. Electronic properties of edge-functionalized zigzag graphene nanoribbons on SiO2 substrate

    Authors: D. M. Zhang, Z. Li, J. F. Zhong, L. Miao, J. J. Jiang

    Abstract: Based on first-principles calculations, electronic properties of edge-functionalized zigzag graphene nanoribbons (ZGNRs) on SiO2 substrate are presented. Metallic or semiconducting properties of ZGNRs are revealed due to various interactions between edge-hydrogenated ZGNRs and different SiO2 (0001) surfaces. Bivalent functional groups decorating ZGNRs serve as the bridge between active edges of ZG… ▽ More

    Submitted 13 January, 2011; originally announced January 2011.

    Comments: 10 pages, 5 figures

  8. arXiv:1012.1918  [pdf, other

    cond-mat.mtrl-sci

    Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

    Authors: A. Richardella, D. M. Zhang, J. S. Lee, A. Koser, D. W. Rench, A. L. Yeats, B. B. Buckley, D. D. Awschalom, N. Samarth

    Abstract: We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2Se3, we demonstrate the growth of thin films with atomically flat terraces over hundre… ▽ More

    Submitted 8 December, 2010; originally announced December 2010.

    Comments: To appear in Applied Physics Letters

    Journal ref: Applied Physics Letters 97, 262104 (2010)