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Spin order and dynamics in the topological rare-earth germanide semimetals
Authors:
Yuhao Wang,
Zhixuan Zhen,
**g Meng,
Igor Plokhikh,
Delong Wu,
Dariusz J. Gawryluk,
Yang Xu,
Qingfeng Zhan,
Ming Shi,
Ekaterina Pomjakushina,
Toni Shiroka,
Tian Shang
Abstract:
The $RE$Al(Si,Ge) ($RE$ = rare earth) family, known to break both the inversion- and time-reversal symmetries, represents one of the most suitable platforms for investigating the interplay between correlated-electron phenomena and topologically nontrivial bands. Here, we report on systematic magnetic, transport, and muon-spin rotation and relaxation ($μ$SR) measurements on (Nd,Sm)AlGe single cryst…
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The $RE$Al(Si,Ge) ($RE$ = rare earth) family, known to break both the inversion- and time-reversal symmetries, represents one of the most suitable platforms for investigating the interplay between correlated-electron phenomena and topologically nontrivial bands. Here, we report on systematic magnetic, transport, and muon-spin rotation and relaxation ($μ$SR) measurements on (Nd,Sm)AlGe single crystals, which exhibit antiferromagnetic (AFM) transitions at $T_\mathrm{N} = 6.1$ and 5.9 K, respectively. In addition, NdAlGe undergoes also an incommensurate-to-commensurate ferrimagnetic transition at 4.5 K. Weak transverse-field $μ$SR measurements confirm the AFM transitions, featuring a $\sim$90 % magnetic volume fraction. In both cases, zero-field (ZF) $μ$SR measurements reveal a more disordered internal field distribution in NdAlGe than in SmAlGe, reflected in a larger transverse muon-spin relaxation rate $λ^\mathrm{T}$ at $T \ll T_\mathrm{N}$. This may be due to the complex magnetic structure of NdAlGe, which undergoes a series of metamagnetic transitions in an external magnetic field, while SmAlGe shows only a robust AFM order. In NdAlGe, the topological Hall effect (THE) appears between the first and the second metamagnetic transitions for $H \parallel c$, while it is absent in SmAlGe. Such THE in NdAlGe is most likely attributed to the field-induced topological spin textures. The longitudinal muon-spin relaxation rate $λ^\mathrm{L}(T)$, diverges near the AFM order, followed by a clear drop at $T < T_\mathrm{N}$. In the magnetically ordered state, spin fluctuations are significantly stronger in NdAlGe than in SmAlGe. In general, our longitudinal-field $μ$SR data indicate vigorous spin fluctuations in NdAlGe, thus providing valuable insights into the origin of THE and of the possible topological spin textures in $RE$Al(Si,Ge) Weyl semimetals.
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Submitted 24 June, 2024;
originally announced June 2024.
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Enhanced torque efficiency in ferromagnetic multilayers by introducing naturally oxidized Cu
Authors:
Kun Zheng,
Cuimei Cao,
Yingying Lu,
**g Meng,
Junpeng Pan,
Zhenjie Zhao,
Yang Xu,
Tian Shang,
Qingfeng Zhan
Abstract:
Spin-orbit torque (SOT) in the heavy elements with a large spin-orbit coupling (SOC) has been frequently used to manipulate the magnetic states in spintronic devices. Recent theoretical works have predicted that the surface oxidized light elements with a negligible SOC can yield a sizable orbital torque (OT), which plays an important role in switching the magnetization. Here, we report anomalous-H…
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Spin-orbit torque (SOT) in the heavy elements with a large spin-orbit coupling (SOC) has been frequently used to manipulate the magnetic states in spintronic devices. Recent theoretical works have predicted that the surface oxidized light elements with a negligible SOC can yield a sizable orbital torque (OT), which plays an important role in switching the magnetization. Here, we report anomalous-Hall-resistance and harmonic-Hall-voltage measurements on perpendicularly magnetized Ta/Cu/[Ni/Co]$_5$/Cu-CuO$_x$ multilayers. Both torque efficiency and spin-Hall angle of these multilayers are largely enhanced by introducing a naturally oxidized Cu-CuO$_x$ layer, where the SOC is negligible. Such an enhancement is mainly due to the collaborative driven of the SOT from the Ta layer and the OT from the Cu/CuO$_x$ interface, and can be tuned by controlling the thickness of Cu-CuO$_x$ layer. Compared to the Cu-CuO$_x$-free multilayers, the maximum torque efficiency and spin-Hall angle were enhanced by a factor of ten, larger than most of the reported values in the other heterostructures.
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Submitted 27 April, 2024;
originally announced April 2024.
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Absence of topological Hall effect in Fe$_x$Rh$_{100-x}$ epitaxial films: revisiting their phase diagram
Authors:
Xiaoyan Zhu,
Hui Li,
**g Meng,
Xinwei Feng,
Zhixuan Zhen,
Haoyu Lin,
Bocheng Yu,
Wenjuan Cheng,
Dongmei Jiang,
Yang Xu,
Tian Shang,
Qingfeng Zhan
Abstract:
A series of Fe$_x$Rh$_{100-x}$ ($30 \leq x \leq 57$) films were epitaxially grown using magnetron sputtering, and were systematically studied by magnetization-, electrical resistivity-, and Hall resistivity measurements. After optimizing the growth conditions, phase-pure Fe$_{x}$Rh$_{100-x}$ films were obtained, and their magnetic phase diagram was revisited. The ferromagnetic (FM) to antiferromag…
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A series of Fe$_x$Rh$_{100-x}$ ($30 \leq x \leq 57$) films were epitaxially grown using magnetron sputtering, and were systematically studied by magnetization-, electrical resistivity-, and Hall resistivity measurements. After optimizing the growth conditions, phase-pure Fe$_{x}$Rh$_{100-x}$ films were obtained, and their magnetic phase diagram was revisited. The ferromagnetic (FM) to antiferromagnetic (AFM) transition is limited at narrow Fe-contents with $48 \leq x \leq 54$ in the bulk Fe$_x$Rh$_{100-x}$ alloys. By contrast, the FM-AFM transition in the Fe$_x$Rh$_{100-x}$ films is extended to cover a much wider $x$ range between 33 % and 53 %, whose critical temperature slightly decreases as increasing the Fe-content. The resistivity jump and magnetization drop at the FM-AFM transition are much more significant in the Fe$_x$Rh$_{100-x}$ films with $\sim$50 % Fe-content than in the Fe-deficient films, the latter have a large amount of paramagnetic phase. The magnetoresistivity (MR) is rather weak and positive in the AFM state, while it becomes negative when the FM phase shows up, and a giant MR appears in the mixed FM- and AFM states. The Hall resistivity is dominated by the ordinary Hall effect in the AFM state, while in the mixed state or high-temperature FM state, the anomalous Hall effect takes over. The absence of topological Hall resistivity in Fe$_{x}$Rh$_{100-x}$ films with various Fe-contents implies that the previously observed topological Hall effect is most likely extrinsic. We propose that the anomalous Hall effect caused by the FM iron moments at the interfaces nicely explains the hump-like anomaly in the Hall resistivity. Our systematic investigations may offer valuable insights into the spintronics based on iron-rhodium alloys.
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Submitted 10 October, 2023;
originally announced October 2023.
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Neutron scattering and muon-spin spectroscopy studies of the magnetic triangular-lattice compounds $A_2$La$_2$NiW$_2$O$_{12}$ ($A$ = Sr, Ba)
Authors:
B. C. Yu,
J. Y. Yang,
D. J. Gawryluk,
Y. Xu,
Q. F. Zhan,
T. Shiroka,
T. Shang
Abstract:
We report on the geometrically frustrated two-dimensional triangular-lattice magnets $A_2$La$_2$NiW$_2$O$_{12}$ ($A$ = Sr, Ba) studied mostly by means of neutron powder diffraction (NPD) and muon-spin rotation and relaxation ($μ$SR) techniques. The chemical pressure induced by the Ba-for-Sr substitution suppresses the ferromagnetic (FM) transition from 6.3 K in the Ba-compound to 4.8 K in the Sr-c…
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We report on the geometrically frustrated two-dimensional triangular-lattice magnets $A_2$La$_2$NiW$_2$O$_{12}$ ($A$ = Sr, Ba) studied mostly by means of neutron powder diffraction (NPD) and muon-spin rotation and relaxation ($μ$SR) techniques. The chemical pressure induced by the Ba-for-Sr substitution suppresses the ferromagnetic (FM) transition from 6.3 K in the Ba-compound to 4.8 K in the Sr-compound. We find that the $R\bar{3}$ space group reproduces the NPD patterns better than the previously reported $R\bar{3}m$ space group. Both compounds adopt the same magnetic structure with a propagation vector $\boldsymbol{k} = (0, 0, 0)$, in which the Ni$^{2+}$ magnetic moments are aligned ferromagnetically along the $c$-axis. The zero-field {\textmu}SR results reveal two distinct internal fields (0.31 and 0.10 T), caused by the long-range ferromagnetic order. The small transverse muon-spin relaxation rates reflect the homogeneous internal field distribution in the ordered phase and, thus, further support the simple FM arrangement of the Ni$^{2+}$ moments. The small longitudinal muon-spin relaxation rates, in both the ferromagnetic- and paramagnetic states of A$_2$La$_2$NiW$_2$O$_{12}$, indicate that spin fluctuations are rather weak. Our results demonstrate that chemical pressure indeed changes the superexchange interactions in $A_2$La$_2$NiW$_2$O$_{12}$ compounds, with the FM interactions being dominant.
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Submitted 9 July, 2023;
originally announced July 2023.
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Fully-gapped superconductivity and topological aspects of the noncentrosymmetric TaReSi superconductor
Authors:
T. Shang,
J. Z. Zhao,
Lun-Hui Hu,
D. J. Gawryluk,
X. Y. Zhu,
H. Zhang,
J. Meng,
Z. X. Zhen,
B. C. Yu,
Z. Zhou,
Y. Xu,
Q. F. Zhan,
E. Pomjakushina,
T. Shiroka
Abstract:
We report a study of the noncentrosymmetric TaReSi superconductor by means of muon-spin rotation and relaxation ($μ$SR) technique, complemented by electronic band-structure calculations. Its superconductivity, with $T_c$ = 5.5 K and upper critical field $μ_0H_\mathrm{c2}(0)$ $\sim$ 3.4 T, was characterized via electrical-resistivity- and magnetic-susceptibility measurements. The temperature-depend…
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We report a study of the noncentrosymmetric TaReSi superconductor by means of muon-spin rotation and relaxation ($μ$SR) technique, complemented by electronic band-structure calculations. Its superconductivity, with $T_c$ = 5.5 K and upper critical field $μ_0H_\mathrm{c2}(0)$ $\sim$ 3.4 T, was characterized via electrical-resistivity- and magnetic-susceptibility measurements. The temperature-dependent superfluid density, obtained from transverse-field $μ$SR, suggests a fully-gapped superconducting state in TaReSi, with an energy gap $Δ_0$ = 0.79 meV and a magnetic penetration depth $λ_0$ = 562 nm. The absence of a spontaneous magnetization below $T_c$, as confirmed by zero-field $μ$SR, indicates a preserved time-reversal symmetry in the superconducting state. The density of states near the Fermi level is dominated by the Ta- and Re-5$d$ orbitals, which account for the relatively large band splitting due to the antisymmetric spin-orbit coupling. In its normal state, TaReSi behaves as a three-dimensional Kramers nodal-line semimetal, characterized by an hourglass-shaped dispersion protected by glide reflection. By combining non\-triv\-i\-al electronic bands with intrinsic superconductivity, TaReSi is a promising material for investigating the topological aspects of noncentrosymmetric superconductors.
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Submitted 27 May, 2023;
originally announced May 2023.
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Fully-gapped superconductivity with preserved time-reversal symmetry in NiBi$_3$ single crystals
Authors:
T. Shang,
J. Meng,
X. Y. Zhu,
H. Zhang,
B. C. Yu,
Z. X. Zhen,
Y. H. Wang,
Y. Xu,
Q. F. Zhan,
D. J. Gawryluk,
T. Shiroka
Abstract:
We report a study of NiBi$_3$ single crystals by means of electrical-resistivity-, magnetization-, and muon-spin rotation and relaxation ($μ$SR) measurements. As a single crystal, NiBi$_3$ adopts a needle-like shape and exhibits bulk superconductivity with $T_c \approx 4.1$ K. By applying magnetic fields parallel and perpendicular to the $b$-axis of NiBi$_3$, we establish that its lower- and upper…
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We report a study of NiBi$_3$ single crystals by means of electrical-resistivity-, magnetization-, and muon-spin rotation and relaxation ($μ$SR) measurements. As a single crystal, NiBi$_3$ adopts a needle-like shape and exhibits bulk superconductivity with $T_c \approx 4.1$ K. By applying magnetic fields parallel and perpendicular to the $b$-axis of NiBi$_3$, we establish that its lower- and upper critical fields, as well as the magnetic penetration depths show slightly different values, suggesting a weakly anisotropic superconductivity. In both cases, the zero-temperature upper critical fields are much smaller than the Pauli-limit value, indicating that the superconducting state is constrained by the orbital pair breaking. The temperature evolution of the superfluid density, obtained from transverse-field $μ$SR, reveals a fully-gapped superconductivity in NiBi$_3$, with a shared superconducting gap $Δ_0$ = 2.1 $k_\mathrm{B}$$T_c$ and magnetic penetration depths $λ_0$ = 223 and 210 nm for $H \parallel b$- and $H \perp b$, respectively. The lack of spontaneous fields below $T_c$ indicates that time-reversal symmetry is preserved in NiBi$_3$. The absence of a fast muon-spin relaxation and/or precession in the zero-field $μ$SR spectra definitely rules out any type of magnetic ordering in NiBi$_3$ single crystals. Overall, our investigation suggests that NiBi$_3$ behaves as a conventional $s$-type superconductor.
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Submitted 5 May, 2023;
originally announced May 2023.
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Anomalous anisotropy of spin current in a cubic spin source with noncollinear antiferromagnetism
Authors:
Cuimei Cao,
Shiwei Chen,
Rui-Chun Xiao,
Zengtai Zhu,
Guoqiang Yu,
Yang** Wang,
Xuepeng Qiu,
Liang Liu,
Tieyang Zhao,
Ding-Fu Shao,
Yang Xu,
**gsheng Chen,
Qingfeng Zhan
Abstract:
Cubic materials host high crystal symmetry and hence are not expected to support anisotropy in transport phenomena. In contrast to this common expectation, here we report an anomalous anisotropy of spin current can emerge in the (001) film of Mn${_3}$Pt, a noncollinear antiferromagnetic spin source with face-centered cubic structure. Such spin current anisotropy originates from the intertwined tim…
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Cubic materials host high crystal symmetry and hence are not expected to support anisotropy in transport phenomena. In contrast to this common expectation, here we report an anomalous anisotropy of spin current can emerge in the (001) film of Mn${_3}$Pt, a noncollinear antiferromagnetic spin source with face-centered cubic structure. Such spin current anisotropy originates from the intertwined time reversal-odd ($T$-odd) and time reversal-even ($T$-even) spin Hall effects. Based on symmetry analyses and experimental characterizations of the current-induced spin torques in Mn${_3}$Pt-based heterostructures, we find that the spin current generated by Mn${_3}$Pt (001) exhibits exotic dependences on the current direction for all the spin components, deviating from that in conventional cubic systems. We also demonstrate that such an anisotropic spin current can be used to realize low-power spintronic applications such as the efficient field-free switching of the perpendicular magnetizations.
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Submitted 9 November, 2022;
originally announced November 2022.
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Evidence of unconventional pairing in the quasi two-dimensional CuIr$_2$Te$_4$ superconductor
Authors:
T. Shang,
Y. Chen,
W. Xie,
D. J. Gawryluk,
R. Gupta,
R. Khasanov,
X. Y. Zhu,
H. Zhang,
Z. X. Zhen,
B. C. Yu,
Z. Zhou,
Y. Xu,
Q. F. Zhan,
E. Pomjakushina,
H. Q. Yuan,
T. Shiroka
Abstract:
The CuIr$_{2-x}$Ru$_x$Te$_4$ superconductors (with a $T_c$ around 2.8 K) can host charge-density waves, whose onset and interplay with superconductivity are not well known at a microscopic level. Here, we report a comprehensive study of the $x$ = 0 and 0.05 cases, whose superconductivity was characterized via electrical-resistivity-, magnetization-, and heat-capacity measurements, while their micr…
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The CuIr$_{2-x}$Ru$_x$Te$_4$ superconductors (with a $T_c$ around 2.8 K) can host charge-density waves, whose onset and interplay with superconductivity are not well known at a microscopic level. Here, we report a comprehensive study of the $x$ = 0 and 0.05 cases, whose superconductivity was characterized via electrical-resistivity-, magnetization-, and heat-capacity measurements, while their microscopic superconducting properties were studied via muon-spin rotation and relaxation ($μ$SR). In CuIr$_{2-x}$Ru$_x$Te$_4$, both the temperature-dependent electronic specific heat and the superfluid density (determined via transverse-field $μ$SR) are best described by a two-gap (s+d)-wave model, comprising a nodeless gap and a gap with nodes. The multigap superconductivity is also supported by the temperature dependence of the upper critical field $H_\mathrm{c2}(T)$. However, under applied pressure, a charge-density-wave order starts to develop and, as a consequence, the superconductivity of CuIr$_2$Te$_4$ achieves a more conventional s-wave character. From a series of experiments, we provide ample evidence that the CuIr$_{2-x}$Ru$_x$Te$_4$ family belongs to the rare cases, where an unconventional superconducting pairing is found near a charge-density-wave quantum critical point.
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Submitted 13 October, 2022;
originally announced October 2022.
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Spin order and fluctuations in the EuAl$_4$ and EuGa$_4$ topological antiferromagnets: A $μ$SR study
Authors:
X. Y. Zhu,
H. Zhang,
D. J. Gawryluk,
Z. X. Zhen,
B. C. Yu,
S. L. Ju,
W. Xie,
D. M. Jiang,
W. J. Cheng,
Y. Xu,
M. Shi,
E. Pomjakushina,
Q. F. Zhan,
T. Shiroka,
T. Shang
Abstract:
We report on systematic muon-spin rotation and relaxation ($μ$SR) studies of the magnetic properties of EuAl$_4$ and EuGa$_4$ single crystals at a microscopic level. Transverse-field $μ$SR measurements, spanning a wide temperature range (from 1.5 to 50 K), show clear bulk AFM transitions, with an almost 100% magnetic volume fraction in both cases. Zero-field $μ$SR measurements, covering both the A…
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We report on systematic muon-spin rotation and relaxation ($μ$SR) studies of the magnetic properties of EuAl$_4$ and EuGa$_4$ single crystals at a microscopic level. Transverse-field $μ$SR measurements, spanning a wide temperature range (from 1.5 to 50 K), show clear bulk AFM transitions, with an almost 100% magnetic volume fraction in both cases. Zero-field $μ$SR measurements, covering both the AFM and the paramagnetic (PM) states, reveal internal magnetic fields $B_\mathrm{int}(0) = 0.33$ T and 0.89 T in EuAl$_4$ and EuGa$_4$, respectively. The transverse muon-spin relaxation rate $λ_\mathrm{T}$, a measure of the internal field distribution at the muon-stop** site, shows a contrasting behavior. In EuGa$_4$, it decreases with lowering the temperature, reaching its minimum at zero temperature, $λ_\mathrm{T}(0) = 0.71$ $μ$s$^{-1}$. In EuAl$_4$, it increases significantly below $T_\mathrm{N}$, to reach 58 $μ$s$^{-1}$ at 1.5 K, most likely reflecting the complex magnetic structure and the competing interactions in the AFM state of EuAl$_4$. In both compounds, the temperature-dependent longitudinal muon-spin relaxation $λ_\mathrm{L}(T)$, an indication of the rate of spin fluctuations, diverges near the onset of AFM order, followed by a significant drop at $T < T_\mathrm{N}$. In the AFM state, spin fluctuations are much stronger in EuAl$_4$ than in EuGa$_4$, while being comparable in the PM state. The evidence of robust spin fluctuations against the external magnetic fields provided by $μ$SR may offer new insights into the origin of the topological Hall effect and the possible magnetic skyrmions in the EuAl$_4$ and EuGa$_4$ compounds.
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Submitted 6 January, 2022;
originally announced January 2022.
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Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet
Authors:
H. Zhang,
X. Y. Zhu,
Y. Xu,
D. J. Gawryluk,
W. Xie,
S. L. Ju,
M. Shi,
T. Shiroka,
Q. F. Zhan,
E. Pomjakushina,
T. Shang
Abstract:
We report on systematic temperature- and magnetic field-dependent studies of the EuGa$_4$ binary compound, which crystallizes in a centrosymmetric tetragonal BaAl$_4$-type structure with space group $I4/mmm$. The electronic properties of EuGa$_4$ single crystals, with an antiferromagnetic (AFM) transition at $T_\mathrm{N} \sim 16.4$ K, were characterized via electrical resistivity and magnetizatio…
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We report on systematic temperature- and magnetic field-dependent studies of the EuGa$_4$ binary compound, which crystallizes in a centrosymmetric tetragonal BaAl$_4$-type structure with space group $I4/mmm$. The electronic properties of EuGa$_4$ single crystals, with an antiferromagnetic (AFM) transition at $T_\mathrm{N} \sim 16.4$ K, were characterized via electrical resistivity and magnetization measurements. A giant nonsaturating magnetoresistance was observed at low temperatures, reaching $\sim 7 \times 10^4$ % at 2 K in a magnetic field of 9 T. In the AFM state, EuGa$_4$ undergoes a series of metamagnetic transitions in an applied magnetic field, clearly manifested in its field-dependent electrical resistivity. Below $T_\mathrm{N}$, in the $\sim$4-7 T field range, we observe also a clear hump-like anomaly in the Hall resistivity which is part of the anomalous Hall resistivity. We attribute such a hump-like feature to the topological Hall effect, usually occurring in noncentrosymmetric materials known to host topological spin textures (as e.g., magnetic skyrmions). Therefore, the family of materials with a tetragonal BaAl$_4$-type structure, to which EuGa$_4$ and EuAl$_4$ belong, seems to comprise suitable candidates on which one can study the interplay among correlated-electron phenomena (such as charge-density wave or exotic magnetism) with topological spin textures and topologically nontrivial bands.
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Submitted 16 October, 2021;
originally announced October 2021.
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Friedel oscillations and helium bubble ordering in molybdenum
Authors:
W. T. Geng,
Q. Zhan
Abstract:
Helium ions implanted into metals can evolve into ordered bubbles isomorphic to the host lattice. Long-range elastic interaction is generally believed to drive the formation of bubble superlattice, but little is known about the thermodynamics at the very initial stage. Our first-principles calculations demonstrate that in molybdenum, Friedel oscillations induced by individual helium generate both…
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Helium ions implanted into metals can evolve into ordered bubbles isomorphic to the host lattice. Long-range elastic interaction is generally believed to drive the formation of bubble superlattice, but little is known about the thermodynamics at the very initial stage. Our first-principles calculations demonstrate that in molybdenum, Friedel oscillations induced by individual helium generate both potential barriers and wells for helium clustering at short He-He distances. Such repulsion and attraction at high concentration provide a thermodynamic diving force to assist lining up randomly distributed He atoms into ordered bubbles. Friedel oscillations might have general impact on solute-solute interactions in alloys.
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Submitted 30 December, 2020;
originally announced December 2020.
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Tuning Non-Gilbert-type dam** in FeGa films on MgO(001) via oblique deposition
Authors:
Yang Li,
Yan Li,
Qian Liu,
Zhe Yuan,
Qing-Feng Zhan,
Wei He,
Hao-Liang Liu,
Ke Xia,
Wei Yu,
Xiang-Qun Zhang,
Zhao-Hua Cheng
Abstract:
The ability to tailor the dam** factor is essential for spintronic and spin-torque applications. Here, we report an approach to manipulate the dam** factor of FeGa/MgO(001) films by oblique deposition. Owing to the defects at the surface or interface in thin films, two-magnon scattering (TMS) acts as a non-Gilbert dam** mechanism in magnetization relaxation. In this work, the contribution of…
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The ability to tailor the dam** factor is essential for spintronic and spin-torque applications. Here, we report an approach to manipulate the dam** factor of FeGa/MgO(001) films by oblique deposition. Owing to the defects at the surface or interface in thin films, two-magnon scattering (TMS) acts as a non-Gilbert dam** mechanism in magnetization relaxation. In this work, the contribution of TMS was characterized by in-plane angular dependent ferromagnetic resonance (FMR). It is demonstrated that the intrinsic Gilbert dam** is isotropic and invariant, while the extrinsic mechanism related to TMS is anisotropic and can be tuned by oblique deposition. Furthermore, the two and fourfold TMS related to the uniaxial magnetic anisotropy (UMA) and magnetocrystalline anisotropy were discussed. Our results open an avenue to manipulate magnetization relaxation in spintronic devices.
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Submitted 2 November, 2019;
originally announced November 2019.
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Enhancement of ultrafast demagnetization rate and Gilbert dam** driven by femtosecond laser-induced spin currents in Fe81Ga19/Ir20Mn80 bilayers
Authors:
Wei Zhang,
Qian Liu,
Zhe Yuan,
Ke Xia,
Wei He,
Qing-feng Zhan,
Xiang-qun Zhang,
Zhao-hua Cheng
Abstract:
In spintronics applications, ultrafast spin dynamics have to be controlled at femtosecond (fs) timescales via fs-laser radiation. At such ultrafast timescales, the effect of the Gilbert dam** factor α on ultrafast demagnetization time should be considered. In previous explorations for the relationship between these two parameters, it was found that the theoretical calculations based on the local…
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In spintronics applications, ultrafast spin dynamics have to be controlled at femtosecond (fs) timescales via fs-laser radiation. At such ultrafast timescales, the effect of the Gilbert dam** factor α on ultrafast demagnetization time should be considered. In previous explorations for the relationship between these two parameters, it was found that the theoretical calculations based on the local spin-flip scattering model do not agree with the experimental results. Here, we find that in Fe81Ga19(FeGa)/Ir20Mn80(IrMn) bilayers, the unconventional IrMn thickness dependence of α results from the competition between spin currents pumped from the ferromagnetic (FM) FeGa layer to the antiferromagnetic (AFM) IrMn layer and those pumped from the AFM layer to the FM layer. More importantly, we establish a proportional relationship between the change of the ultrafast demagnetization rate and the enhancement of Gilbert dam** induced by the spin currents via interfacial spin chemical potential . Our work builds a bridge to connect the ultrafast demagnetization time and Gilbert dam** in ultrafast photo-induced spin currents dominated systems, which not only explains the disagreement between experimental and theoretical results in the relation of τ_M with α, but provides further insight into ultrafast spin dynamics as well.
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Submitted 29 August, 2019;
originally announced August 2019.
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Chirp control of directional current in monolayer graphene by intense few-cycle laser
Authors:
Erheng Wu,
Qiang Zhan,
Zhanshan Wang,
Chao** Zhang,
Chengpu Liu
Abstract:
The residual current density in monolayer graphene driven by an intense few-cycle chirped laser pulse is investigated via numerical solution of the time-dependent Schrödinger equation. It is found that the residual current is sensitive to the initial chirp rate, and the defined asymmetry degree for current along the different polarization direction versus chirp rate follows a simple sinusoidal fun…
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The residual current density in monolayer graphene driven by an intense few-cycle chirped laser pulse is investigated via numerical solution of the time-dependent Schrödinger equation. It is found that the residual current is sensitive to the initial chirp rate, and the defined asymmetry degree for current along the different polarization direction versus chirp rate follows a simple sinusoidal function. The underlying physical mechanism is the chirp-dependent Landau-Zener-Stückelberg interference. The chirp control of currents provides a novel convenient tool in the petaHertz switching of two-dimensional materials based optoelectronic devices on the sub-femtosecond timescale.
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Submitted 28 May, 2019;
originally announced May 2019.
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One-for-multiple substitution in solid solutions
Authors:
W. T. Geng,
Q. Zhan
Abstract:
It is generally assumed that one solute atom will occupy only one lattice site in a substitutional solid solution. We here report an interesting discovery by first-principles calculations that a large solute atom can replace multiple matrix atoms in the elemental crystal of beryllium. Examination on Groups IIIB, IVB, VB, VIB, and VA elements shows that Cr will substitute for one, V and Mo for thre…
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It is generally assumed that one solute atom will occupy only one lattice site in a substitutional solid solution. We here report an interesting discovery by first-principles calculations that a large solute atom can replace multiple matrix atoms in the elemental crystal of beryllium. Examination on Groups IIIB, IVB, VB, VIB, and VA elements shows that Cr will substitute for one, V and Mo for three, Sc, Y, Ti, Zr, Hf, W, Nb, Ta, As, Sb, and Bi for four, and La for five Be atoms. Dissolution of Zr, Hf, Sc, and Y is exothermic, suggesting a good solubility. At low concentration, the configurational entropy resulted from one-for-multiple substitution is larger than in the one-for-one substitution case. We find that Sc, Y, Zr, and Hf all have tendency to aggregate in Be, but Sc is the weakest among them and thus can be expected to improve the superplasticity of Be.
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Submitted 9 June, 2018;
originally announced June 2018.
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The effect of inserted NiO layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures
Authors:
T. Shang,
Q. F. Zhan,
H. L. Yang,
Z. H. Zuo,
Y. L. Xie,
L. P. Liu,
S. L. Zhang,
Y. Zhang,
H. H. Li,
B. M. Wang,
Y. H. Wu,
S. Zhang,
Run-Wei Li
Abstract:
We investigate the spin-current transport through antiferromagnetic insulator (AFMI) by means of the spin-Hall magnetoressitance (SMR) over a wide temperature range in Pt/NiO/Y$_3$Fe$_5$O$_{12}$ (Pt/NiO/YIG) heterostructures. By inserting the AFMI NiO layer, the SMR dramatically decreases by decreasing the temperature down to the antiferromagnetically ordered state of NiO, which implies that the A…
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We investigate the spin-current transport through antiferromagnetic insulator (AFMI) by means of the spin-Hall magnetoressitance (SMR) over a wide temperature range in Pt/NiO/Y$_3$Fe$_5$O$_{12}$ (Pt/NiO/YIG) heterostructures. By inserting the AFMI NiO layer, the SMR dramatically decreases by decreasing the temperature down to the antiferromagnetically ordered state of NiO, which implies that the AFM order prevents rather than promotes the spin-current transport. On the other hand, the magnetic proximity effect (MPE) on induced Pt moments by YIG, which entangles with the spin-Hall effect (SHE) in Pt, can be efficiently screened, and pure SMR can be derived by insertion of NiO. The dual roles of the NiO insertion including efficiently blocking the MPE and transporting the spin current from Pt to YIG are outstanding compared with other antiferromagnetic (AFM) metal or nonmagnetic metal (NM).
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Submitted 22 April, 2016; v1 submitted 12 April, 2016;
originally announced April 2016.
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Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers
Authors:
T. Shang,
H. L. Yang,
Q. F. Zhan,
Z. H. Zuo,
Y. L. Xie,
L. P. Liu,
S. L. Zhang,
Y. Zhang,
H. H. Li,
B. M. Wang,
Y. H. Wu,
S. Zhang,
Run-Wei Li
Abstract:
We report an investigation of temperature and IrMn layered thickness dependence of anomalous-Hall resistance (AHR), anisotropic magnetoresistance (AMR), and magnetization on Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The magnitude of AHR is dramatically enhanced compared with Pt/YIG bilayers. The enhancement is much more profound at higher temperatures and peaks at the IrMn thickness of…
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We report an investigation of temperature and IrMn layered thickness dependence of anomalous-Hall resistance (AHR), anisotropic magnetoresistance (AMR), and magnetization on Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The magnitude of AHR is dramatically enhanced compared with Pt/YIG bilayers. The enhancement is much more profound at higher temperatures and peaks at the IrMn thickness of 3 nm. The observed spin-Hall magnetoresistance (SMR) in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the entire thickness of the IrMn layer to interact with the YIG layer. The lack of conventional anisotropic magnetoresistance (CAMR) implies that the insertion of the IrMn layer between Pt and YIG efficiently suppresses the magnetic proximity effect (MPE) on induced Pt moments by YIG. Our results suggest that the dual roles of the InMn insertion in Pt/IrMn/YIG heterostructures are to block the MPE and to transport the spin current between Pt and YIG layers. We discuss possible mechanisms for the enhanced AHR.
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Submitted 11 April, 2016; v1 submitted 11 March, 2016;
originally announced March 2016.
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Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid
Authors:
T. Shang,
Q. F. Zhan,
H. L. Yang,
Z. H. Zuo,
Y. L. Xie,
H. H. Li,
L. P. Liu,
B. M. Wang,
Y. H. Wu,
S. Zhang,
Run-Wei Li
Abstract:
We report an investigation of anisotropic magnetoresistance (AMR) and anomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxial Y$_3$Fe$_5$O$_{12}$ (YIG) ferromagnetic insulator films. For the Pt/YIG hybrid, large spin-Hall magnetoresistance (SMR) along with a sizable conventional anisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence of AHR were observed…
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We report an investigation of anisotropic magnetoresistance (AMR) and anomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxial Y$_3$Fe$_5$O$_{12}$ (YIG) ferromagnetic insulator films. For the Pt/YIG hybrid, large spin-Hall magnetoresistance (SMR) along with a sizable conventional anisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence of AHR were observed in the temperature range of 5-300 K. In contrast, a reduced SMR with negligible CAMR and AHR was found in Rh/YIG hybrid. Since CAMR and AHR are characteristics for all ferromagnetic metals, our results suggest that the Pt is likely magnetized by YIG due to the magnetic proximity effect (MPE) while Rh remains free of MPE. Thus the Rh/YIG hybrid could be an ideal model system to explore physics and devices associated with pure spin current.
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Submitted 30 October, 2015;
originally announced October 2015.
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Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids
Authors:
T. Shang,
Q. F. Zhan,
H. L. Yang,
Z. H. Zuo,
Y. L. Xie,
Y. Zhang,
L. P. Liu,
B. M. Wang,
Y. H. Wu,
S. Zhang,
Run-Wei Li
Abstract:
We report an investigation of transverse Hall resistance and longitudinal resistance on Pt thin films sputtered on epitaxial LaCoO$_3$ (LCO) ferromagnetic insulator films. The LaCoO$_3$ films were deposited on several single crystalline substrates [LaAlO$_3$ (LAO), (La,Sr)(Al,Ta)O$_3$ (LSAT), and SrTiO$_3$ (STO)] with (001) orientation. The physical properties of LaCoO$_3$ films were characterized…
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We report an investigation of transverse Hall resistance and longitudinal resistance on Pt thin films sputtered on epitaxial LaCoO$_3$ (LCO) ferromagnetic insulator films. The LaCoO$_3$ films were deposited on several single crystalline substrates [LaAlO$_3$ (LAO), (La,Sr)(Al,Ta)O$_3$ (LSAT), and SrTiO$_3$ (STO)] with (001) orientation. The physical properties of LaCoO$_3$ films were characterized by the measurements of magnetic and transport properties. The LaCoO$_3$ films undergo a paramagnetic to ferromagnetic (FM) transition at Curie temperatures ranging from 40 K to 85 K, below which the Pt/LCO hybrids exhibit significant extraordinary Hall resistance (EHR) up to 50 m$Ω$ and unconventional magnetoresistance (UCMR) ratio $Δ$$ρ$/$ρ_0$ about $1.2 \times 10^{-4}$, accompanied by the conventional magnetoresistance (CMR). The observed spin transport properties share some common features as well as some unique characteristics when compared with well-studied Y$_3$Fe$_5$O$_{12}$-based Pt thin films. Our findings call for new theories since the extraordinary Hall resistance and magnetoresistance cannot be consistently explained by the existing theories.
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Submitted 29 September, 2015;
originally announced September 2015.
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Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface
Authors:
Haoyang Zhao,
Fan Yang,
Peiqian Tong,
Yanxia Cui,
Yuying Hao,
Qinjun Sun,
Fang Shi,
Qiuqiang Zhan,
Hua Wang,
Furong Zhu
Abstract:
The performance of organic solar cells (OSCs) can be greatly improved by incorporating silica-coated gold nanorods (Au@SiO2 NRs) at the interface between the hole transporting layer and the active layer due to the plasmonic effect. The silica shell impedes the aggregation effect of the Au NRs in ethanol solution as well as the server charge recombination on the surface of the Au NRs otherwise they…
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The performance of organic solar cells (OSCs) can be greatly improved by incorporating silica-coated gold nanorods (Au@SiO2 NRs) at the interface between the hole transporting layer and the active layer due to the plasmonic effect. The silica shell impedes the aggregation effect of the Au NRs in ethanol solution as well as the server charge recombination on the surface of the Au NRs otherwise they would bring forward serious reduction in open circuit voltage when incorporating the Au NRs at the positions in contact with the active materials. As a result, while the high open circuit voltage being maintained, the optimized plasmonic OSCs possess an increased short circuit current, and correspondingly an elevated power conversion efficiency with the enhancement factor of ~11%. The origin of performance improvement in OSCs with the Au@SiO2 NRs was analyzed systematically using morphological, electrical, optical characterizations along with theoretical simulation. It is found that the broadband enhancement in absorption, which yields the broadband enhancement in exciton generation in the active layer, is the major factor contributing to the increase in the short circuit current density. Simulation results suggest that the excitation of the transverse and longitudinal surface plasmon resonances of individual NRs as well as their mutual coupling can generate strong electric field near the vicinity of the NRs, thereby an improved exciton generation profile in the active layer. The incorporation of Au@SiO2 NRs at the interface between the hole transporting layer and the active layer also improves hole extraction in the OSCs.
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Submitted 30 April, 2015;
originally announced April 2015.
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Waltzing of a Helium Pair in Tungsten: Migration Barrier and Trajectory Revealed from First-Principles
Authors:
J. G. Niu,
Q. Zhan,
W. T. Geng
Abstract:
Despite well documented first-principles theoretical determination of the low migration energy (0.06 eV) of a single He in tungsten, fully quantum mechanical calculations on the migration of a He pair still present a challenge due to the complexity of its trajectory. By identifying the six most stable configurations of the He pair in W and decomposing its motion into rotational, translational, and…
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Despite well documented first-principles theoretical determination of the low migration energy (0.06 eV) of a single He in tungsten, fully quantum mechanical calculations on the migration of a He pair still present a challenge due to the complexity of its trajectory. By identifying the six most stable configurations of the He pair in W and decomposing its motion into rotational, translational, and rotational-translational routines, we are able to determine its migration barrier and trajectory. Our density functional theory calculations demonstrate a He pair has three modes of motion: a close or open circular two-dimensional motion in (100) plane with an energy barrier of 0.30 eV, a snaking motion along [001] direction with a barrier of 0.30 eV, and a twisted-ladder motion along [010] direction with the two He swinging in the plane (100) and a barrier of 0.31 eV. The graceful associative movements of a He pair are related to the chemical-bonding-like He-He interaction being much stronger than its migration barrier in W. The excellent agreement with available experimental measurements (0.24-0.32 eV) on He migration makes our first-principles result a solid input to obtain accurate He-W interatomic potentials in molecular dynamics simulations.
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Submitted 18 April, 2014;
originally announced April 2014.
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Fabrication, properties, and applications of flexible magnetic films
Authors:
Yiwei Liu,
Qingfeng Zhan,
Run-Wei Li
Abstract:
Flexible magnetic devices, i.e., magnetic devices fabricated on flexible substrates, are very attractive in application of detecting magnetic field in arbitrary surface, non-contact actuators, and microwave devices due to the stretchable, biocompatible, light-weight, portable, and low cost properties. Flexible magnetic films are essential for the realization of various functionalities of flexible…
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Flexible magnetic devices, i.e., magnetic devices fabricated on flexible substrates, are very attractive in application of detecting magnetic field in arbitrary surface, non-contact actuators, and microwave devices due to the stretchable, biocompatible, light-weight, portable, and low cost properties. Flexible magnetic films are essential for the realization of various functionalities of flexible magnetic devices. To give a comprehensive understanding for flexible magnetic films and related devices, we have reviewed recent advances in the studies of flexible magnetic films including fabrication methods, magnetic and transport properties of flexible magnetic films, and their applications in magnetic sensors, actuators, and microwave devices. Three typical methods were introduced to prepare the flexible magnetic films. Stretching or bending the flexible magnetic films offers a good way to apply mechanical strain on magnetic films, so that magnetic anisotropy, exchanged bias, coercivity, and magnetoresistance can be effectively manipulated. Finally, a series of examples were shown to demonstrate the great potential of flexible magnetic films for future applications.
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Submitted 18 November, 2013;
originally announced November 2013.
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Local Conduction at the BiFeO3-CoFe2O4 Tubular Oxide Interface
Authors:
Ying-Hui Hsieh,
Jia-Ming Liou,
Bo-Chao Huang,
Chen-Wei Liang,
Qing He,
Qian Zhan,
Ya-** Chiu,
Yi-Chun Chen,
Ying-Hao Chu
Abstract:
In strongly correlated oxides, heterointerfaces, manipulating the interaction, frustration, and discontinuity of lattice, charge, orbital, and spin degrees of freedom, generate new possibilities for next generation devices. In this study, we went back to examine the existing oxide heterostructures and found the local conduction at the BiFeO3-CoFe2O4 vertical interface. In such hetero-nanostructure…
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In strongly correlated oxides, heterointerfaces, manipulating the interaction, frustration, and discontinuity of lattice, charge, orbital, and spin degrees of freedom, generate new possibilities for next generation devices. In this study, we went back to examine the existing oxide heterostructures and found the local conduction at the BiFeO3-CoFe2O4 vertical interface. In such hetero-nanostructure, the tubular interface, surrounding BiFeO3-CoFe2O4 vertical interface, can not only be the medium to the coupling between phases, but also be a new state of the matter. Our study demonstrates a novel concept on oxide interface design and opens a pathway alternative for the explorations of diverse functionalities in complex oxide interfaces.
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Submitted 7 August, 2012; v1 submitted 25 June, 2012;
originally announced June 2012.
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Angular dependent magnetization reversal in exchange biased bilayers under a modified 'effective field model'
Authors:
Wei Zhang,
Qing-feng Zhan,
Kannan M. Krishnan
Abstract:
A modified effective field model was developed to quantitatively interpret the angular dependent magnetization reversal processes in exchange biased Fe/IrMn bilayers. Several kinds of multi-step loops with distinct magnetization reversal routes were observed for the samples measured at various field orientations. Two types of angular dependent switching fields are observed and their transitions ar…
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A modified effective field model was developed to quantitatively interpret the angular dependent magnetization reversal processes in exchange biased Fe/IrMn bilayers. Several kinds of multi-step loops with distinct magnetization reversal routes were observed for the samples measured at various field orientations. Two types of angular dependent switching fields are observed and their transitions are investigated, which are found to be driven by both Fe and IrMn layer thicknesses. Our modified effective field model can nicely describe all the switching field behaviors including the critical effects of the exchange bias induced uniaxial anisotropy on the magnetization reversal processes.
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Submitted 25 February, 2011;
originally announced February 2011.
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Surface morphology and magnetic anisotropy of Fe/MgO(001) films deposited at oblique incidence
Authors:
Qing-feng Zhan,
Chris Van Haesendonck,
Stijn Vandezande,
Kristiaan Temst
Abstract:
We have studied surface morphology and magnetic properties of Fe/MgO(001) films deposited at an angle varying between 0o and 60o with respect to the surface normal and with azimuth along the Fe[010] or the Fe[110] direction. Due to shadowing, elongated grains appear on the film surface for deposition at sufficiently large angle. X-ray reflectivity reveals that, depending on the azimuthal directi…
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We have studied surface morphology and magnetic properties of Fe/MgO(001) films deposited at an angle varying between 0o and 60o with respect to the surface normal and with azimuth along the Fe[010] or the Fe[110] direction. Due to shadowing, elongated grains appear on the film surface for deposition at sufficiently large angle. X-ray reflectivity reveals that, depending on the azimuthal direction, films become either rougher or smoother for oblique deposition. For deposition along Fe[010] the pronounced uniaxial magnetic anisotropy (UMA) results in the occurrence of reversed two-step and of three-step hysteresis loops. For deposition along Fe[110] the growth-induced UMA is much weaker, causing a small rotation of the easy axes.
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Submitted 27 October, 2008;
originally announced October 2008.
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Magnetic anisotropy and reversal in epitaxial Fe/MgO(001) films revisited
Authors:
Qing-feng Zhan,
Stijn Vandezande,
Kristiaan Temst,
Chris Van Haesendonck
Abstract:
We investigate the magnetization reversal in Fe/MgO(001) films with fourfold in-plane magnetic anisotropy and an additional uniaxial anisotropy whose orientation and strength are tuned using different growth geometries and post growth treatments. The previously adopted mechanism of 180^{o} domain wall nucleation clearly fails to explain the observed 180^{o} magnetization reversal. A new reversal…
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We investigate the magnetization reversal in Fe/MgO(001) films with fourfold in-plane magnetic anisotropy and an additional uniaxial anisotropy whose orientation and strength are tuned using different growth geometries and post growth treatments. The previously adopted mechanism of 180^{o} domain wall nucleation clearly fails to explain the observed 180^{o} magnetization reversal. A new reversal mechanism with two successive domain wall nucleations consistently predicts the switching fields for all field orientations. Our results are relevant for a correct interpretation of magnetization reversal in many other epitaxial metallic and semiconducting thin films.
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Submitted 27 October, 2008; v1 submitted 26 August, 2008;
originally announced August 2008.
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Anomalously large measured thermoelectric power factor in Sr$_{1-x}$La$_x$TiO$_3$ thin films due to SrTiO$_3$ substrate reduction
Authors:
Matthew L. Scullin,
Choongho Yu,
Mark Huijben,
Subroto Mukerjee,
Jan Seidel,
Qian Zhan,
Joel Moore,
Arun Majumdar,
R. Ramesh
Abstract:
We report the observation that thermoelectric thin-films of La-doped SrTiO3 grown on SrTiO3 substrates yield anomalously high values of thermopower to give extraordinary values of power factor at 300K. Thin-films of Sr0.98La0.02TiO3, grown via pulsed laser deposition at low temperature and low pressure (450C, 10-7Torr), do not yield similarly high values when grown on other substrates. The thin-…
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We report the observation that thermoelectric thin-films of La-doped SrTiO3 grown on SrTiO3 substrates yield anomalously high values of thermopower to give extraordinary values of power factor at 300K. Thin-films of Sr0.98La0.02TiO3, grown via pulsed laser deposition at low temperature and low pressure (450C, 10-7Torr), do not yield similarly high values when grown on other substrates. The thin-film growth induces oxygen reduction in the SrTiO3 crystals, do** the substrate n-type. It is found that the backside resistance of the SrTiO3 substrates is as low (~12ohm/square) as it is on the film-side after film growth.
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Submitted 7 April, 2008; v1 submitted 2 April, 2008;
originally announced April 2008.
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Energy level alignment at Alq3/La0.7Sr0.3MnO3 interface for organic spintronic devices
Authors:
Y. Q. Zhan,
I. Bergenti,
L. Hueso,
V. Dediu,
M. P. de Jong,
Z. S. Li
Abstract:
The electronic structure of the interface between Tris (8-hydroxyquinolino)-aluminum (Alq3) and La0.7Sr0.3MnO3 manganite (LSMO) was investigated by means of photoelectron spectroscopy. As demonstrated recently this interface is characterized by efficient spin injection in organic spintronic devices. We detected a strong interface dipole of about 0.9 eV that shifts down the whole energy diagram o…
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The electronic structure of the interface between Tris (8-hydroxyquinolino)-aluminum (Alq3) and La0.7Sr0.3MnO3 manganite (LSMO) was investigated by means of photoelectron spectroscopy. As demonstrated recently this interface is characterized by efficient spin injection in organic spintronic devices. We detected a strong interface dipole of about 0.9 eV that shifts down the whole energy diagram of the Alq3 with respect to the vacuum level. This modifies the height of the barriers for the holes injection to 1.7 eV, indicating that hole injection from LSMO into Alq3 is more difficult than it was expected as the energy level matched by vacuum levels. We believe the interface dipole is due to the intrinsic dipole moment characteristic for Alq3 layer. An additional weak interaction is observed between the two materials influencing the N 1s core levels of the organic semiconductor. The presented data are of greatest importance for both qualitative and quantitative description of the organic spin valves.
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Submitted 14 February, 2007;
originally announced February 2007.
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Growth of honeycomb-symmetrical Mn nanodots arrays on Si(111)-7*7 surface
Authors:
De-yong Wang,
Hong-ye Wu,
Li-jun Chen,
Wei He,
Qing-feng Zhan,
Zhao-hua Cheng*
Abstract:
The growth of well-ordered Mn nanodots arrays on Si(111)-7*7 reconstructed surface was investigated by means of scanning tunneling microscopy (STM) as well as Kinetic Monte Carlo (KMC) simulation. Mn atoms deposited slowly onto elevated substrates were observed to occupy preferentially on the faulted half unit cells (FHUCs) of Si(111)-7*7 surface. The preference occupancy in the FHUCs, PF, defin…
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The growth of well-ordered Mn nanodots arrays on Si(111)-7*7 reconstructed surface was investigated by means of scanning tunneling microscopy (STM) as well as Kinetic Monte Carlo (KMC) simulation. Mn atoms deposited slowly onto elevated substrates were observed to occupy preferentially on the faulted half unit cells (FHUCs) of Si(111)-7*7 surface. The preference occupancy in the FHUCs, PF, defined as the ratio of number of FHUCs occupied by Mn nanodots to number of all occupied in two halves, decreases with increasing deposition rate as well as decreasing substrate temperature. The KMC simulations, which are in good agreement with the experimental results, were employed to optimize the growth conditions, including deposition rate and substrate temperature, for the self-organized growth of Mn nanodots arrays on Si(111)-7*7 reconstructed surface. By adjusting the deposition rate, one can control the growth of well-ordered and uniform Mn nanodots arrays to form either a triangular symmetry or a honeycomb one.
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Submitted 1 January, 2006;
originally announced January 2006.
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Preferential arrangement of uniform Mn nanodots on Si(111)-7x7 surface
Authors:
De-yong Wang,
Li-jun Chen,
Wei He,
Qing-feng Zhan,
Zhao-hua Cheng
Abstract:
Under proper growth conditions, ordered and uniform Mn nanodots were fabricated on the Si(111)-7x7 surface without the presence of a wetting layer. Furthermore, the Mn nanodots deposited onto the elevated substrates were observed to occupy preferentially on the faulted half unit cells (FHUCs) of the Si(111)-7x7 surface. This phenomenon implies that the Mn dots adsorbed on the FHUCs is more stabl…
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Under proper growth conditions, ordered and uniform Mn nanodots were fabricated on the Si(111)-7x7 surface without the presence of a wetting layer. Furthermore, the Mn nanodots deposited onto the elevated substrates were observed to occupy preferentially on the faulted half unit cells (FHUCs) of the Si(111)-7x7 surface. This phenomenon implies that the Mn dots adsorbed on the FHUCs is more stable than those adsorbed on the unfaulted half unit cells (UFHUCs). Within the framework of quasiequilibrium thermodynamics, the energy difference between adsorption on the UFHUCs and the FHUCs was estimated to be 0.05eV. The intrinsic attractive potential wells on the FHUCs effectively trap the outdiffusion of Mn atoms, and consequently result in a preferential arrangement of islands with well-defined sizes.
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Submitted 24 November, 2005;
originally announced November 2005.
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In-Plane Magnetic Anisotropy In RF Sputtered Fe-N Thin Films
Authors:
H. B. Nie,
S. Y. Xu,
C. K. Ong,
Q. Zhan,
D. X. Li,
J. P. Wang
Abstract:
We have fabricated Fe(N) thin films with varied N2 partial pressure and studied the microstructure, morphology, magnetic properties and resistivity by using X-ray diffraction, atomic force microscopy, transmission electron microscopy, vibrating-sample magnetometer and angle-resolved M-H hysteresis Loop tracer and standard four-point probe method. In the presence of low N2 partial pressure, Fe(N)…
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We have fabricated Fe(N) thin films with varied N2 partial pressure and studied the microstructure, morphology, magnetic properties and resistivity by using X-ray diffraction, atomic force microscopy, transmission electron microscopy, vibrating-sample magnetometer and angle-resolved M-H hysteresis Loop tracer and standard four-point probe method. In the presence of low N2 partial pressure, Fe(N) films showed a basic bcc a-Fe structure with a preferred (110) texture. A variation of in-plane magnetic anisotropy of the Fe(N) films was observed with the changing of N component. The evolution of in-plane anisotropy in the films was attributed to the directional order mechanism. Nitrogen atoms play an important role in refining the a-Fe grains and inducing uniaxial anisotropy.
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Submitted 14 August, 2003;
originally announced August 2003.
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Reversible Structural Transition in Epitaxial Manganite Film
Authors:
Q. Zhan,
R. Yu,
L. L. He,
D. X. Li,
J. Li,
S. Y. Xu,
C. K. Ong
Abstract:
A reversible structural transition of an epitaxial La2/3Sr1/3MnO3 film deposited on the LaAlO3 substrate has been investigated by means of in situ high-resolution transmission electron microscopy (HREM) and electron diffraction, combined with image and diffraction calculations. We observe that the crystallographic symmetry of the film can be lowered via electron beam irradiation, leading to a rh…
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A reversible structural transition of an epitaxial La2/3Sr1/3MnO3 film deposited on the LaAlO3 substrate has been investigated by means of in situ high-resolution transmission electron microscopy (HREM) and electron diffraction, combined with image and diffraction calculations. We observe that the crystallographic symmetry of the film can be lowered via electron beam irradiation, leading to a rhombohedral-monoclinic transition. This transition can be attributed to the cooperating effect of the mismatch stress and the irradiation-induced thermal-stress.
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Submitted 11 December, 2001; v1 submitted 8 December, 2001;
originally announced December 2001.
