-
Electronic Correlation and Pseudogap-like Behavior of High-Temperature Superconductor La3Ni2O7
Authors:
Yidian Li,
Xian Du,
Yantao Cao,
Cuiying Pei,
Mingxin Zhang,
Wenxuan Zhao,
Kaiyi Zhai,
Runzhe Xu,
Zhongkai Liu,
Zhiwei Li,
**kui Zhao,
Gang Li,
Yanpeng Qi,
Hanjie Guo,
Yulin Chen,
Lexian Yang
Abstract:
High-temperature superconductivity (HTSC) remains one of the most challenging and fascinating mysteries in condensed matter physics. Recently, superconductivity with transition temperature exceeding liquid-nitrogen temperature is discovered in La3Ni2O7 at high pressure, which provides a new platform to explore the unconventional HTSC. In this work, using high-resolution angle-resolved photoemissio…
▽ More
High-temperature superconductivity (HTSC) remains one of the most challenging and fascinating mysteries in condensed matter physics. Recently, superconductivity with transition temperature exceeding liquid-nitrogen temperature is discovered in La3Ni2O7 at high pressure, which provides a new platform to explore the unconventional HTSC. In this work, using high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation, we systematically investigate the electronic structures of La3Ni2O7 at ambient pressure. Our experiments are in nice agreement with ab-initio calculations after considering an orbital-dependent band renormalization effect. The strong electron correlation effect pushes a flat band of d_(z^2 ) orbital component below the Fermi level (EF), which is predicted to locate right at EF under high pressure. Moreover, the d_(x^2-y^2 ) band shows a pseudogap-like behavior with suppressed spectral weight and diminished quasiparticle peak near EF. Our findings provide important insights into the electronic structure of La3Ni2O7, which will shed light on the understanding of the unconventional superconductivity in nickelates.
△ Less
Submitted 10 July, 2024;
originally announced July 2024.
-
Correlated Electronic Structure and Incipient Flat Bands of the Kagome Superconductor CsCr3Sb5
Authors:
Yidian Li,
Yi Liu,
Xian Du,
Siqi Wu,
Wenxuan Zhao,
Kaiyi Zhai,
Yinqi Hu,
Senyao Zhang,
Houke Chen,
Jieyi Liu,
Yiheng Yang,
Cheng Peng,
Makoto Hashimoto,
Donghui Lu,
Zhongkai Liu,
Yilin Wang,
Yulin Chen,
Guanghan Cao,
Lexian Yang
Abstract:
Kagome materials exhibit many novel phenomena emerging from the interplay between lattice geometry, electronic structure, and topology. A prime example is the vanadium-based kagome materials AV3Sb5 (A = K, Rb, and Cs) with superconductivity and unconventional charge-density wave (CDW). More interestingly, the substitution of vanadium by chromium further introduces magnetism and enhances the correl…
▽ More
Kagome materials exhibit many novel phenomena emerging from the interplay between lattice geometry, electronic structure, and topology. A prime example is the vanadium-based kagome materials AV3Sb5 (A = K, Rb, and Cs) with superconductivity and unconventional charge-density wave (CDW). More interestingly, the substitution of vanadium by chromium further introduces magnetism and enhances the correlation effect in CsCr3Sb5 which likewise exhibits superconductivity under pressure and competing density-wave state. Here we systematically investigate the electronic structure of CsCr3Sb5 using high-resolution angle-resolved photoemission spectroscopy (APRES) and ab-initio calculations. Overall, the measured electronic structure agrees with the theoretical calculation. Remarkably, Cr 3d orbitals exhibit incoherent electronic states and contribute to incipient flat bands close to the Fermi level. The electronic structure shows a minor change across the magnetic transition at 55 K, suggesting a weak interplay between the local magnetic moment and itinerant electrons. Furthermore, we reveal a drastic enhancement of the electron scattering rate across the magnetic transition, which is relevant to the semiconducting-like transport property of the system at high temperatures. Our results suggest that CsCr3Sb5 is a strongly correlated Hund's metal with incipient flat bands near the Fermi level, which provides an electronic basis for understanding its novel properties in comparison to the non-magnetic and weakly correlated AV3Sb5.
△ Less
Submitted 6 June, 2024;
originally announced June 2024.
-
Correlated Electronic Structure and Density-Wave Gap in Trilayer Nickelate La4Ni3O10
Authors:
X. Du,
Y. D. Li,
Y. T. Cao,
C. Y. Pei,
M. X. Zhang,
W. X. Zhao,
K. Y. Zhai,
R. Z. Xu,
Z. K. Liu,
Z. W. Li,
J. K. Zhao,
G. Li,
Y. L. Chen,
Y. P. Qi,
H. J. Guo,
L. X. Yang
Abstract:
The discovery of pressurized superconductivity at 80 K in La3Ni2O7 officially brings nickelates into the family of high-temperature superconductors, which gives rise to not only new insights but also mysteries in the strongly correlated superconductivity. More recently, the sibling compound La4Ni3O10 was also shown to be superconducting below about 25 K under pressure, further boosting the popular…
▽ More
The discovery of pressurized superconductivity at 80 K in La3Ni2O7 officially brings nickelates into the family of high-temperature superconductors, which gives rise to not only new insights but also mysteries in the strongly correlated superconductivity. More recently, the sibling compound La4Ni3O10 was also shown to be superconducting below about 25 K under pressure, further boosting the popularity of nickelates in the Ruddlesden-Popper phase. In this study, combining high-resolution angle-resolved photoemission spectroscopy and ab initio calculation, we systematically investigate the electronic structures of La4Ni3O10 at ambient pressure. We reveal a high resemblance of La4Ni3O10 with La3Ni2O7 in the orbital-dependent fermiology and electronic structure, suggesting a similar electronic correlation between the two compounds. The temperature-dependent measurements imply an orbital-dependent energy gap related to the density-wave transition in La4Ni3O10. By comparing the theoretical pressure-dependent electronic structure, clues about the superconducting high-pressure phase can be deduced from the ambient measurements, providing crucial information for deciphering the unconventional superconductivity in nickelates.
△ Less
Submitted 30 May, 2024;
originally announced May 2024.
-
Ultrafast Dynamics of Bilayer and Trilayer Nickelate Superconductors
Authors:
Y. D. Li,
Y. T. Cao,
L. Y. Liu,
P. Peng,
H. Lin,
C. Y. Pei,
M. X. Zhang,
H. Wu,
X. Du,
W. X. Zhao,
K. Y. Zhai,
J. K. Zhao,
M. -L. Lin,
P. H. Tan,
Y. P. Qi,
G. Li,
H. J. Guo,
Luyi Yang,
L. X. Yang
Abstract:
In addition to the pressurized high-temperature superconductivity, bilayer and trilayer nickelate superconductors Lan+1NinO3n+1 (n = 2 and 3) exhibit many intriguing properties at ambient pressure, such as orbital-dependent electronic correlation, non-Fermi liquid behavior, and density-wave transitions. Here, using ultrafast reflectivity measurement, we observe a drastic difference between the ult…
▽ More
In addition to the pressurized high-temperature superconductivity, bilayer and trilayer nickelate superconductors Lan+1NinO3n+1 (n = 2 and 3) exhibit many intriguing properties at ambient pressure, such as orbital-dependent electronic correlation, non-Fermi liquid behavior, and density-wave transitions. Here, using ultrafast reflectivity measurement, we observe a drastic difference between the ultrafast dynamics of the bilayer and trilayer nickelates at ambient pressure. Firstly, we observe a coherent phonon mode in La4Ni3O10 involving the collective vibration of La, Ni, and O atoms, which is absent in La3Ni2O7. Secondly, the temperature-dependent relaxation time diverges near the density-wave transition temperature of La4Ni3O10, in drastic contrast to kink-like changes in La3Ni2O7. Moreover, we estimate the electron-phonon coupling constants to be 0.05~0.07 and 0.12~0.16 for La3Ni2O7 and La4Ni3O10, respectively, suggesting a relatively minor role of electron-phonon coupling in the electronic properties of Lan+1NinO3n+1. Our work not only sheds light on the relevant microscopic interaction but also establishes a foundation for further studying the interplay between superconductivity and density-wave transitions in nickelate superconductors.
△ Less
Submitted 7 March, 2024;
originally announced March 2024.
-
Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4
Authors:
W. X. Zhao,
M. Yang,
R. Z. Xu,
X. Du,
Y. D. Li,
K. Y. Zhai,
C. Peng,
D. Pei,
H. Gao,
Y. W. Li,
L. X. Xu,
J. F. Han,
Y. Huang,
Z. K. Liu,
Y. G. Yao,
J. C. Zhuang,
Y. Du,
J. J. Zhou,
Y. L. Chen,
L. X. Yang
Abstract:
The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of two or more dimensions lower than the insulating bulk1-5. In this work, by performing high-resolution angle-resolved photoemission spectroscopy (ARPES) measureme…
▽ More
The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of two or more dimensions lower than the insulating bulk1-5. In this work, by performing high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements with submicron spatial and spin resolutions, we systematically investigate the electronic structure and spin texture of quasi-one-dimensional (1D) HOTI candidate Bi4Br4. In contrast to the bulk-state-dominant spectra on the (001) surface, we observe gapped surface states on the (100) surface, whose dispersion and spin-polarization agree well with our ab initio calculations. Moreover, we reveal in-gap states connecting the surface valence and conduction bands, which is an explicit signature of the existence of hinge states inside the (100) surface gap. Our findings provide compelling evidence for the HOTI phase of Bi4Br4. The identification of the higher-order topological phase will lay the promising prospect of applications based on 1D spin-momentum locked current in electronic and spintronic devices.
△ Less
Submitted 6 November, 2023;
originally announced November 2023.
-
Disassembling one-dimensional chains in molybdenum oxides
Authors:
Xian Du,
Yidian Li,
Wenxuan Zhao,
Runzhe Xu,
Kaiyi Zhai,
Yulin Chen,
Lexian Yang
Abstract:
The dimensionality of quantum materials strongly affects their physical properties. Although many emergent phenomena, such as charge-density wave and Luttinger liquid behavior, are well understood in one-dimensional (1D) systems, the generalization to explore them in higher dimensional systems is still a challenging task. In this study, we aim to bridge this gap by systematically investigating the…
▽ More
The dimensionality of quantum materials strongly affects their physical properties. Although many emergent phenomena, such as charge-density wave and Luttinger liquid behavior, are well understood in one-dimensional (1D) systems, the generalization to explore them in higher dimensional systems is still a challenging task. In this study, we aim to bridge this gap by systematically investigating the crystal and electronic structures of molybdenum-oxide family compounds, where the contexture of 1D chains facilitates rich emergent properties. While the quasi-1D chains in these materials share general similarities, such as the motifs made up of MoO6 octahedrons, they exhibit vast complexity and remarkable tunability. We disassemble the 1D chains in molybdenum oxides with different dimensions and construct effective models to excellently fit their low-energy electronic structures obtained by ab initio calculations. Furthermore, we discuss the implications of such chains on other physical properties of the materials and the practical significance of the effective models. Our work establishes the molybdenum oxides as simple and tunable model systems for studying and manipulating the dimensionality in quantum systems.
△ Less
Submitted 18 September, 2023;
originally announced September 2023.
-
Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4
Authors:
Q. Q. Zhang,
Y. Shi,
K. Y. Zhai,
W. X. Zhao,
X. Du,
J. S. Zhou,
X. Gu,
R. Z. Xu,
Y. D. Li,
Y. F. Guo,
Z. K. Liu,
C. Chen,
S. -K. Mo,
T. K. Kim,
C. Cacho,
J. W. Yu,
W. Li,
Y. L. Chen,
Jiun-Haw Chu,
L. X. Yang
Abstract:
EuTe4 is a newly-discovered van der Waals material exhibiting a novel charge-density wave (CDW) with a large thermal hysteresis in the resistivity and CDW gap. In this work, we systematically study the electronic structure and transport properties of EuTe4 using high-resolution angle-resolved photoemission spectroscopy (ARPES), magnetoresistance measurements, and scanning tunneling microscopy (STM…
▽ More
EuTe4 is a newly-discovered van der Waals material exhibiting a novel charge-density wave (CDW) with a large thermal hysteresis in the resistivity and CDW gap. In this work, we systematically study the electronic structure and transport properties of EuTe4 using high-resolution angle-resolved photoemission spectroscopy (ARPES), magnetoresistance measurements, and scanning tunneling microscopy (STM). We observe a CDW gap of about 200 meV at low temperatures that persists up to 400 K, suggesting that the CDW transition occurs at a much higher temperature. We observe a large thermal hysteretic behavior of the ARPES intensity near the Fermi level, consistent with the resistivity measurement. The hysteresis in the resistivity measurement does not change under a magnetic field up to 7 T, excluding the thermal magnetic hysteresis mechanism. Instead, the surface topography measured with STM shows surface domains with different CDW trimerization directions, which may be important for the thermal hysteretic behavior of EuTe4. Interestingly, we observe a large negative magnetoresistance at low temperatures that can be associated with the canting of magnetically ordered Eu spins. Our work shed light on the understanding of magnetic, transport, and electronic properties of EuTe4.
△ Less
Submitted 5 March, 2023;
originally announced March 2023.
-
Continuous Electrical Manipulation of Magnetic Anisotropy and Spin Flop** in van der Waals Ferromagnetic Devices
Authors:
Ming Tang,
Junwei Huang,
Feng Qin,
Kun Zhai,
Toshiya Ideue,
Zeya Li,
Fanhao Meng,
Anmin Nie,
Linglu Wu,
Xiangyu Bi,
Caorong Zhang,
Ling Zhou,
Peng Chen,
Caiyu Qiu,
Peizhe Tang,
Haijun Zhang,
Xiangang Wan,
Lin Wang,
Zhongyuan Liu,
Yongjun Tian,
Yoshihiro Iwasa,
Hongtao Yuan
Abstract:
Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or out-of-plane directions) have been demonstrated with novel magnetization switching mechanisms for extended device functionalities. Normally, the intrinsic magnetic…
▽ More
Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or out-of-plane directions) have been demonstrated with novel magnetization switching mechanisms for extended device functionalities. Normally, the intrinsic magnetic anisotropy in ferromagnetic materials is unchanged within a fixed direction, and thus, it is difficult to realize multifunctionality devices. Therefore, continuous modulation of magnetic anisotropy in ferromagnetic materials is highly desired but remains challenging. Here, we demonstrate a gate-tunable magnetic anisotropy transition from out-of-plane to canted and finally to in-plane in layered Fe$_5$GeTe$_2$ by combining the measurements of the angle-dependent anomalous Hall effect and magneto-optical Kerr effect with quantitative Stoner-Wohlfarth analysis. The magnetic easy axis continuously rotates in a spin-flop pathway by gating or temperature modulation. Such observations offer a new avenue for exploring magnetization switching mechanisms and realizing new spintronic functionalities.
△ Less
Submitted 16 November, 2022;
originally announced November 2022.
-
Reentrance of spin-driven ferroelectricity through rotational tunneling of ammonium
Authors:
Yan Wu,
Lei Ding,
Na Su,
Yinina Ma,
Kun Zhai,
Xiaojian Bai,
Bryan C. Chakoumakos,
Young Sun,
Yongqiang Cheng,
**guang Cheng,
Wei Tian,
Huibo Cao
Abstract:
Quantum effects fundamentally engender exotic physical phenomena in macroscopic systems, which advance next-generation technological applications. Rotational tunneling that represents the quantum phenomenon of the librational motion of molecules is ubiquitous in hydrogen-contained materials. However, its direct manifestation in realizing macroscopic physical properties is elusive. Here we report a…
▽ More
Quantum effects fundamentally engender exotic physical phenomena in macroscopic systems, which advance next-generation technological applications. Rotational tunneling that represents the quantum phenomenon of the librational motion of molecules is ubiquitous in hydrogen-contained materials. However, its direct manifestation in realizing macroscopic physical properties is elusive. Here we report an observation of reentrant ferroelectricity under low pressure that is mediated by the rotational tunneling of ammonium ions in molecule-based (NH$_4$)$_2$FeCl$_5 \cdot$H$_2$O. Applying a small pressure leads to a transition from spin-driven ferroelectricity to paraelectricity coinciding with the stabilization of a collinear magnetic phase. Such a transition is attributed to the hydrogen bond fluctuations via the rotational tunneling of ammonium groups as supported by theoretical calculations. Higher pressure lifts the quantum fluctuations and leads to a reentrant ferroelectric phase concomitant with another incommensurate magnetic phase. These results demonstrate that the rotational tunneling emerges as a new route to control magnetic-related properties in soft magnets, opening avenues for designing multi-functional materials and realizing potential quantum control.
△ Less
Submitted 7 January, 2021;
originally announced January 2021.
-
Probe Skyrmion phases and dynamics in MnSi via the magnetoelectric effect in a composite configuration
Authors:
Yisheng Chai,
Peipei Lu,
Haifeng Du,
Jianxin Shen,
Yinina Ma,
Kun Zhai,
Le Wang,
Youguo Shi,
Hang Li,
Wenhong Wang,
Young Sun
Abstract:
We have developed a sensitive technique to probe the magnetic skyrmion phases and dynamics by employing the interfacial coupling effect in a magnetoelectric composite configuration. The study on a MnSi single crystal sample using this technique provides clear evidences for the skyrmion lattice phase and coexistence of skyrmion and conical phase. Above the Curie temperature TC, a region with strong…
▽ More
We have developed a sensitive technique to probe the magnetic skyrmion phases and dynamics by employing the interfacial coupling effect in a magnetoelectric composite configuration. The study on a MnSi single crystal sample using this technique provides clear evidences for the skyrmion lattice phase and coexistence of skyrmion and conical phase. Above the Curie temperature TC, a region with strong spin fluctuation is revealed as well. By tuning the density of Skyrmion or disorder, a transition from the skyrmion lattice to skyrmion-conical coexisting phase is observed. The observation is in good agreement with a theoretical model which predicts the dissipation behavior in the coexistence phase.
△ Less
Submitted 22 September, 2021; v1 submitted 5 November, 2018;
originally announced November 2018.
-
Electromagnon in Y-type hexaferrite BaSrCoZnFe$_{11}$AlO$_{22}$
Authors:
Jakub Vit,
Filip Kadlec,
Christelle Kadlec,
Fedir Borodavka,
Yi Sheng Chai,
Kun Zhai,
Young Sun,
Stanislav Kamba
Abstract:
We investigated static and dynamic magnetoelectric properties of single crystalline BaSrCoZnFe$_{11}$AlO$_{22}$ which is a room-temperature multiferroic with Y-type hexaferrite crystal structure. Below $300\,\rm K$, a purely electric-dipole-active electromagnon at $\approx 1.2\,\rm THz$ with the electric polarization oscillating along the hexagonal axis was observed by THz and Raman spectroscopies…
▽ More
We investigated static and dynamic magnetoelectric properties of single crystalline BaSrCoZnFe$_{11}$AlO$_{22}$ which is a room-temperature multiferroic with Y-type hexaferrite crystal structure. Below $300\,\rm K$, a purely electric-dipole-active electromagnon at $\approx 1.2\,\rm THz$ with the electric polarization oscillating along the hexagonal axis was observed by THz and Raman spectroscopies. We investigated the behavior of the electromagnon with applied DC magnetic field and linked its properties to static measurements of the magnetic structure. Our analytical calculations determined selection rules for electromagnons activated by the magnetostriction mechanism in various magnetic structures of Y-type hexaferrite. Comparison with our experiment supports that the electromagnon is indeed activated by the magnetostriction mechanism involving spin vibrations along the hexagonal axis.
△ Less
Submitted 9 April, 2018;
originally announced April 2018.
-
Electromagnon in the Z-type hexaferrite $({\rm Ba}_{x}{\rm Sr}_{1-x})_3\rm Co_2Fe_{24}O_{41}$
Authors:
Filip Kadlec,
Christelle Kadlec,
Jakub Vit,
Fedir Borodavka,
Martin Kempa,
Jan Prokleska,
Josef Bursik,
Robert Uhrecky,
Stephane Rols,
Yi Sheng Chai,
Kun Zhai,
Young Sun,
Jan Drahokoupil,
Veronica Goian,
Stanislav Kamba
Abstract:
We studied experimentally the high-temperature magnetoelectric $({\rm Ba}_{x}{\rm Sr}_{1-x})_3\rm Co_2Fe_{24}O_{41}$ prepared as ceramics (x = 0, 0.2) and a single crystal (x = 0.5) using inelastic neutron scattering, THz time-domain, Raman and far-infrared spectroscopies. The spectra, measured with varying temperature and magnetic field, reveal rich information about the collective spin and latti…
▽ More
We studied experimentally the high-temperature magnetoelectric $({\rm Ba}_{x}{\rm Sr}_{1-x})_3\rm Co_2Fe_{24}O_{41}$ prepared as ceramics (x = 0, 0.2) and a single crystal (x = 0.5) using inelastic neutron scattering, THz time-domain, Raman and far-infrared spectroscopies. The spectra, measured with varying temperature and magnetic field, reveal rich information about the collective spin and lattice excitations. In the ceramics, we observed an infrared-active magnon which is absent in $E^ω\perp z$ polarized THz spectra of the crystal, and we assume that it is an electromagnon active in $E^ω \| z$ polarized spectra. On heating from 7 to 250 K, the frequency of this electromagnon drops from 36 to 25 cm$^{-1}$ and its dam** gradually increases, so it becomes overdamped at room temperature. Applying external magnetic field has a similar effect on the dam** and frequency of the electromagnon, and the mode is no more observable in the THz spectra above 2 T, as the transverse-conical magnetic structure transforms into a collinear one. Raman spectra reveal another spin excitation with a slightly different frequency and much higher dam**. Upon applying magnetic field higher than 3 T, in the low-frequency part of the THz spectra, a narrow excitation appears whose frequency linearly increases with magnetic field. We interpret this feature as the ferromagnetic resonance.
△ Less
Submitted 20 July, 2016;
originally announced July 2016.
-
A multilevel nonvolatile magnetoelectric memory based on memtranstor
Authors:
Jianxin Shen,
Junzhuang Cong,
Dashan Shang,
Yisheng Chai,
Shipeng Shen,
Kun Zhai,
Young Sun
Abstract:
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple stat…
▽ More
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient (α) of multiferroics. Because the states of α depends on the relative orientation between magnetization and polarization, one can reach different levels of α by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of α can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of α is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells.
△ Less
Submitted 22 June, 2016;
originally announced June 2016.
-
A non-volatile memory based on nonlinear magnetoelectric effects
Authors:
Jianxin Shen,
Junzhuang Cong,
Yisheng Chai,
Dashan Shang,
Shipeng Shen,
Kun Zhai,
Ying Tian,
Young Sun
Abstract:
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a butterfly-shaped hysteresis loop. The principle is to utilize the states of the magnetoelectric coefficient, instead of magnetization, electric polarization or resistance, to…
▽ More
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a butterfly-shaped hysteresis loop. The principle is to utilize the states of the magnetoelectric coefficient, instead of magnetization, electric polarization or resistance, to store binary information. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure clearly demonstrate that the sign of the magnetoelectric coefficient can be repeatedly switched between positive and negative by applying electric fields, confirming the feasibility of this principle. This kind of non-volatile memory has outstanding practical virtues such as simple structure, easy operations in writing and reading, low power, fast speed, and diverse materials available.
△ Less
Submitted 9 May, 2016;
originally announced May 2016.
